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Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials
Authors:
I. I. Klimovskikh,
S. V. Eremeev,
D. A. Estyunin,
S. O. Filnov,
K. Shimada,
V. A. Golyashov,
O. E. Tereshchenko,
K. A. Kokh,
A. S. Frolov,
A. I. Sergeev,
V. S. Stolyarov,
V. Miksic Trontl,
L. Petaccia,
G. Di Santo,
M. Tallarida,
J. Dai,
S. Blanco-Canosa,
T. Valla,
A. M. Shikin,
E. V. Chulkov
Abstract:
Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifi…
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Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.
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Submitted 18 March, 2024;
originally announced March 2024.
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Unveiling the stacking-dependent electronic properties of 2D ultrathin rare-earth metalloxenes family LnX$_2$ (Ln = Eu, Gd, Dy; X = Ge, Si)
Authors:
Polina M. Sheverdyaeva,
Alexey N. Mihalyuk,
Jyh-Pin Chou,
Andrey V. Matetskiy,
Sergey V. Eremeev,
Andrey V. Zotov,
Alexander A. Saranin
Abstract:
The studies of electronic effects in reduced dimensionality have become a frontier in nanoscience due to exotic and highly tunable character of quantum phenomena. Recently, a new class of 2D ultrathin Ln$X_2$ metalloxenes composed of a triangular lattice of lanthanide ions (Ln) coupled with 2D-Xenes of silicene or germanene ($X_2$) was introduced and studied with a particular focus on magnetic and…
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The studies of electronic effects in reduced dimensionality have become a frontier in nanoscience due to exotic and highly tunable character of quantum phenomena. Recently, a new class of 2D ultrathin Ln$X_2$ metalloxenes composed of a triangular lattice of lanthanide ions (Ln) coupled with 2D-Xenes of silicene or germanene ($X_2$) was introduced and studied with a particular focus on magnetic and transport properties. However, the electronic properties of metalloxenes and their effective functionalization remain mainly unexplored. Here, using a number of experimental and theoretical techniques, we trace the evolution of electronic properties and magnetic ground state of metalloxenes triggered by external perturbations. We demonstrate that the band structure of Ln$X_2$ films can be uniquely modified by controlling the Xenes stacking, thickness, varying the rare-earth and host elements, and applying an external electric field. Our findings suggest new pathways to manipulate the electronic properties of 2D rare-earth magnets that can be adjusted for spintronics applications.
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Submitted 20 January, 2024;
originally announced January 2024.
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On the floating of the topological surface state on top of a thick lead layer: The case of the Pb/Bi2Se3 interface
Authors:
Oreste De Luca,
Igor A. Shvets,
Sergey V. Eremeev,
Ziya S. Aliev,
Marek Kopciuszynski,
Alexey Barinov,
Fabio Ronci,
Stefano Colonna,
Evgueni V. Chulkov,
Raffaele G. Agostino,
Marco Papagno,
Roberto Flammini
Abstract:
The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leave…
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The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leaves the substrate partially uncovered. Comprehensive density functional theory calculations show that despite the specific arrangement of the atoms at the interface, the topological surface state cannot float on top of the adlayer but rather tends to move inward within the substrate.
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Submitted 27 November, 2023; v1 submitted 25 August, 2023;
originally announced August 2023.
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Insight into the electronic structure of the centrosymmetric skyrmion magnet GdRu$_2$Si$_2$
Authors:
S. V. Eremeev,
D. Glazkova,
G. Poelchen,
A. Kraiker,
K. Ali,
A. V. Tarasov,
S. Schulz,
K. Kliemt,
E. V. Chulkov,
V. S. Stolyarov,
A. Ernst,
C. Krellner,
D. Yu. Usachov,
D. V. Vyalikh
Abstract:
The discovery of a square magnetic-skyrmion lattice in GdRu$_2$Si$_2$, with the smallest so far found skyrmion diameter and without a geometrically frustrated lattice, has attracted significant attention, particularly for potential applications in memory devices and quantum computing. In this work, we present a comprehensive study of surface and bulk electronic structures of GdRu$_2$Si$_2$ by util…
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The discovery of a square magnetic-skyrmion lattice in GdRu$_2$Si$_2$, with the smallest so far found skyrmion diameter and without a geometrically frustrated lattice, has attracted significant attention, particularly for potential applications in memory devices and quantum computing. In this work, we present a comprehensive study of surface and bulk electronic structures of GdRu$_2$Si$_2$ by utilizing momentum-resolved photoemission (ARPES) measurements and first-principles calculations. We show how the electronic structure evolves during the antiferromagnetic transition when a peculiar helical order of 4$f$ magnetic moments within the Gd layers sets in. A nice agreement of the ARPES-derived electronic structure with the calculated one has allowed us to characterize the features of the Fermi surface (FS), unveil the nested region along the $k_z$ at the corner of the 3D FS, and reveal their orbital compositions. Our findings suggest that the Ruderman-Kittel-Kasuya-Yosida interaction plays a decisive role in stabilizing the spiral-like order of Gd 4$f$ moments responsible for the skyrmion physics in GdRu$_2$Si$_2$. Our results provide a deeper understanding of electronic and magnetic properties of this material, which is crucial for predicting and develo** novel skyrmion-based devices.
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Submitted 2 June, 2023;
originally announced June 2023.
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New spin-polarized electron source based on alkali-antimonide photocathode
Authors:
V. S. Rusetsky,
V. A. Golyashov,
S. V. Eremeev,
D. A. Kustov,
I. P. Rusinov,
T. S. Shamirzaev,
A. V. Mironov,
A. Yu. Demin,
O. E. Tereshchenko
Abstract:
New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructure is designed as a spin-polarized electron source in combination with the Al$_{0.11}$Ga$_{0.89}$As target as a spin-detector with spatial resolution.…
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New spin-dependent photoemission properties of alkali antimonide semiconductor cathodes are predicted based on the detected optical spin orientation effect and DFT band structure calculations. Using these results, the Na$_2$KSb/Cs$_3$Sb heterostructure is designed as a spin-polarized electron source in combination with the Al$_{0.11}$Ga$_{0.89}$As target as a spin-detector with spatial resolution. In the Na$_2$KSb/Cs$_3$Sb photocathode, spin-dependent photoemission properties were established through detection of high degree of photoluminescence polarization and high polarization of the photoemitted electrons. It was found that the multi-alkali photocathode can provide electron beams with emittance very close to the limits imposed by the electron thermal energy. The vacuum tablet-type sources of spin-polarized electrons have been proposed for accelerators, that can exclude the construction of the photocathode growth chambers for photoinjectors.
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Submitted 7 May, 2022;
originally announced May 2022.
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Novel magnetic stoichiometric superconductor EuRbFe4As4
Authors:
T. K. Kim,
K. S. Pervakov,
V. A. Vlasenko,
A. V. Sadakov,
A. S. Usoltsev,
D. V. Evtushinsky,
S. W. Jung,
G. Poelchen,
K. Kummer,
D. Roditchev,
V. S. Stolyarov,
I. A. Golovchanskiy,
D. V. Vyalikh,
V. Borisov,
R. Valenti,
A. Ernst,
S. V. Eremeev,
E. V. Chulkov,
V. M. Pudalov
Abstract:
In the novel stoichiometric iron-based material RbEuFe4As4 superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states; their coexistance is puzzling and represents a challenge for both experiment and theory. Using angle-resolved photoemission spectroscopy, resonant photoemission spectroscopy, Andreev reflection spectroscopy and scanning tunneling spectroscopy we have addr…
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In the novel stoichiometric iron-based material RbEuFe4As4 superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states; their coexistance is puzzling and represents a challenge for both experiment and theory. Using angle-resolved photoemission spectroscopy, resonant photoemission spectroscopy, Andreev reflection spectroscopy and scanning tunneling spectroscopy we have addressed this puzzle and unambigously shown that Fe- and Eu-derived states are largely decoupled and that superconducting and a long range magnetic orders exist almost independently from each other.
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Submitted 31 August, 2021;
originally announced August 2021.
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Topological magnetic materials of the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ van der Waals compounds family
Authors:
S. V. Eremeev,
I. P. Rusinov,
Yu. M. Koroteev,
A. Yu. Vyazovskaya,
M. Hoffmann,
P. M. Echenique,
A. Ernst,
M. M. Otrokov,
E. V. Chulkov
Abstract:
Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the f…
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Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the first three members of the family, i.e. MnSb$_2$Te$_4$, ($n=0$), MnSb$_4$Te$_7$, ($n=1$), and MnSb$_6$Te$_{10}$, ($n=2$), are 3D antiferromagnetic topological insulators (AFMTIs), while for $n \geq 3$ a special phase is formed, in which a nontrivial topological order coexists with a partial magnetic disorder in the system of the decoupled 2D ferromagnets, whose magnetizations point randomly along the third direction. Furthermore, due to a weak interlayer exchange coupling, these materials can be field-driven into the FM Weyl semimetal ($n=0$) or FM axion insulator states ($n \geq 1$). Finally, in two dimensions we reveal these systems to show intrinsic quantum anomalous Hall and AFM axion insulator states, as well as quantum Hall state, achieved under external magnetic field, but without Landau levels. Our results provide a solid computational proof that MnSb$_2$Te$_4$, is not topologically trivial as was previously believed that opens possibilities of realization of a wealth of topologically-nontrivial states in the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family.
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Submitted 4 February, 2021;
originally announced February 2021.
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When superconductivity does not fear magnetism: Insight into electronic structure of RbEuFe$_{4}$As$_{4}$
Authors:
T. K. Kim,
K. S. Pervakov,
D. V. Evtushinsky,
S. W. Jung,
G. Poelchen,
K. Kummer,
V. A. Vlasenko,
V. M. Pudalov,
D. Roditchev,
V. S. Stolyarov,
D. V. Vyalikh,
V. Borisov,
R. Valentí,
A. Ernst,
S. V. Eremeev,
E. V. Chulkov
Abstract:
In the novel stoichiometric iron-based material RbEuFe$_{4}$As$_{4}$ superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states. Using angle-resolved photoemission spectroscopy, we reveal a complex three dimensional electronic structure and compare it with density functional theory calculations. Multiple superconducting gaps were measured on various sheets of the Fermi su…
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In the novel stoichiometric iron-based material RbEuFe$_{4}$As$_{4}$ superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states. Using angle-resolved photoemission spectroscopy, we reveal a complex three dimensional electronic structure and compare it with density functional theory calculations. Multiple superconducting gaps were measured on various sheets of the Fermi surface. High resolution resonant photoemission spectroscopy reveals magnetic order of the Eu 4f states deep into the superconducting phase. Both the absolute values and the anisotropy of the superconducting gaps are remarkably similar to the sibling compound without Eu, indicating that Eu magnetism does not affect the pairing of electrons. A complete decoupling between Fe- and Eu-derived states was established from their evolution with temperature, thus unambiguously demonstrating that superconducting and a long range magnetic orders exist independently from each other. The established electronic structure of RbEuFe$_{4}$As$_{4}$ opens opportunities for the future studies of the highly unorthodox electron pairing and phase competition in this family of iron-based superconductors with do**.
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Submitted 3 August, 2020;
originally announced August 2020.
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Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$
Authors:
A. M. Shikin,
D. A. Estyunin,
I. I. Klimovskikh,
S. O. Filnov,
E. F. Schwier,
S. Kumar,
K. Myamoto,
T. Okuda,
A. Kimura,
K. Kuroda,
K. Yaji,
S. Shin,
Y. Takeda,
Y. Saitoh,
Z. S. Aliev,
N. T. Mamedov,
I. R. Amiraslanov,
M. B. Babanly,
M. M. Otrokov,
S. V. Eremeev,
E. V. Chulkov
Abstract:
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (1…
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Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments.
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Submitted 9 April, 2020;
originally announced April 2020.
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Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family
Authors:
I. I. Klimovskikh,
M. M. Otrokov,
D. Estyunin,
S. V. Eremeev,
S. O. Filnov,
A. Koroleva,
E. Shevchenko,
V. Voroshnin,
I. P. Rusinov,
M. Blanco-Rey,
M. Hoffmann,
Z. S. Aliev,
M. B. Babanly,
I. R. Amiraslanov,
N. A. Abdullayev,
V. N. Zverev,
A. Kimura,
O. E. Tereshchenko,
K. A. Kokh,
L. Petaccia,
G. Di Santo,
A. Ernst,
P. M. Echenique,
N. T. Mamedov,
A. M. Shikin
, et al. (1 additional authors not shown)
Abstract:
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and ma…
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Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m \ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the \MBT\, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.
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Submitted 25 October, 2019;
originally announced October 2019.
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Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnBi_2Te_4}$ films
Authors:
Mikhail M. Otrokov,
Igor P. Rusinov,
María Blanco-Rey,
Martin Hoffmann,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Arthur Ernst,
Pedro M. Echenique,
Andrés Arnau,
Evgueni V. Chulkov
Abstract:
Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple lay…
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Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of $\mathrm{MnBi_2Te_4}$ is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide bandgap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, $\mathrm{MnBi_2Te_4}$ is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase.
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Submitted 11 October, 2018;
originally announced October 2018.
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Competing rhombohedral and monoclinic crystal structures in Mn$Pn_2Ch_4$ compounds: an {\em ab-initio} study
Authors:
S. V. Eremeev,
M. M. Otrokov,
E. V. Chulkov
Abstract:
Based on the relativistic spin-polarized density functional theory calculations we investigate the crystal structure, electronic and magnetic properties of a family MnPn2Ch4 compounds, where pnictogen metal atoms (Pn) are Sb and Bi; chalcogens (Ch) are Se, Te. We show that in the series the compounds of this family with heavier elements prefer to adopt rhombohedral crystal structure composed of we…
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Based on the relativistic spin-polarized density functional theory calculations we investigate the crystal structure, electronic and magnetic properties of a family MnPn2Ch4 compounds, where pnictogen metal atoms (Pn) are Sb and Bi; chalcogens (Ch) are Se, Te. We show that in the series the compounds of this family with heavier elements prefer to adopt rhombohedral crystal structure composed of weakly bonded septuple monoatomic layers while those with lighter elements tend to be in the monoclinic structure. Irrespective of the crystal structure all compounds of the MnPn2Ch4 series demonstrate a weak energy gain (of a few meV per formula unit or even smaller than meV) for antiferromagnetic (AFM) coupling for magnetic moments on Mn atoms with respect to their ferromagnetic (FM) state. For rhombohedral structures the interlayer AFM coupling is preferable while in monoclinic phases intralayer AFM configuration with ferromagnetic ordering along the Mn chain and antiferromagnetic ordering between the chains has a minimum energy. Over the series the monoclinic compounds are characterized by substantially wider bandgap than compounds with rhombohedral structure.
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Submitted 27 September, 2018;
originally announced September 2018.
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Prediction and observation of the first antiferromagnetic topological insulator
Authors:
Mikhail M. Otrokov,
Ilya I. Klimovskikh,
Hendrik Bentmann,
Alexander Zeugner,
Ziya S. Aliev,
Sebastian Gass,
Anja U. B. Wolter,
Alexandra V. Koroleva,
Dmitry Estyunin,
Alexander M. Shikin,
María Blanco-Rey,
Martin Hoffmann,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Yury M. Koroteev,
Imamaddin R. Amiraslanov,
Mahammad B. Babanly,
Nazim T. Mamedov,
Nadir A. Abdullayev,
Vladimir N. Zverev,
Bernd Büchner,
Eike F. Schwier,
Shiv Kumar,
Akio Kimura,
Luca Petaccia
, et al. (12 additional authors not shown)
Abstract:
Despite immense advances in the field of topological materials, the antiferromagnetic topological insulator (AFMTI) state, predicted in 2010, has been resisting experimental observation up to now. Here, using density functional theory and Monte Carlo method we predict and by means of structural, transport, magnetic, and angle-resolved photoemission spectroscopy measurements confirm for the first t…
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Despite immense advances in the field of topological materials, the antiferromagnetic topological insulator (AFMTI) state, predicted in 2010, has been resisting experimental observation up to now. Here, using density functional theory and Monte Carlo method we predict and by means of structural, transport, magnetic, and angle-resolved photoemission spectroscopy measurements confirm for the first time realization of the AFMTI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($Θ$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S=ΘT_{1/2}$, which gives rise to the $Z_2$ topological classification of AFM insulators, $Z_2$ being equal to 1 for this material. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ features a giant bandgap in the topological surface state thus representing an ideal platform for the observation of such long-sought phenomena as the quantized magnetoelectric coupling and intrinsic axion insulator state.
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Submitted 19 September, 2018;
originally announced September 2018.
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Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
Authors:
Toru Hirahara,
Sergey V. Eremeev,
Tetsuroh Shirasawa,
Yuma Okuyama,
Takayuki Kubo,
Ryosuke Nakanishi,
Ryota Akiyama,
Akari Takayama,
Tetsuya Hajiri,
Shin-ichiro Ideta,
Masaharu Matsunami,
Kazuki Sumida,
Koji Miyamoto,
Yasumasa Takagi,
Kiyohisa Tanaka,
Taichi Okuda,
Toshihiko Yokoyama,
Shin-ichi Kimura,
Shuji Hasegawa,
Evgueni V. Chulkov
Abstract:
Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the…
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Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for develo** future " topotronics" devices.
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Submitted 6 September, 2017;
originally announced September 2017.
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2D and 3D topological phases in BiTe$X$ compounds
Authors:
S. V. Eremeev,
I. A. Nechaev,
E. V. Chulkov
Abstract:
Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band insulator BiTeI. Here, we study the edge states in the free-standing Bi$_2$Te$_2$I$_2$ sextuple layer (SL) and the electronic structure of the Bi$_2$Te$_2$I$_2$ SL on…
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Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band insulator BiTeI. Here, we study the edge states in the free-standing Bi$_2$Te$_2$I$_2$ sextuple layer (SL) and the electronic structure of the Bi$_2$Te$_2$I$_2$ SL on the natural BiTeI substrate. We show that the topological properties of the Bi$_2$Te$_2$I$_2$ SL on this substrate keep $\mathbb Z_2$ invariant. We also demonstrate that ultra thin centrosymmetric films constructed in the similar manner but from related material BiTeBr are trivial band insulators up to five-SL film thickness. In contrast to Bi$_2$Te$_2$I$_2$ for which the stacking of nontrivial SLs in 3D limit gives a strong topological insulator (TI) phase, strong TI is realized in 3D Bi$_2$Te$_2$Br$_2$ in spite of the SL is trivial. For the last material of the BiTe$X$ ($X$=I,Br,Cl) series, BiTeCl, both 2D and 3D centrosymmetric phases are characterized by topologically trivial band structure.
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Submitted 25 June, 2017;
originally announced June 2017.
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Real-time Observation of Phonon-Mediated $σ$-$π$ Interband Scattering in MgB2
Authors:
Edoardo Baldini,
Andreas Mann,
Lara Benfatto,
Emmanuele Cappelluti,
Angela Acocella,
Vyacheslav M. Silkin,
Sergey V. Eremeev,
Alexey B. Kuzmenko,
Simone Borroni,
Teng Tan,
Xiaoxiang Xi,
Francesco Zerbetto,
Roberto Merlin,
Fabrizio Carbone
Abstract:
In systems having an anisotropic electronic structure, such as the layered materials graphite, graphene and cuprates, impulsive light excitation can coherently stimulate specific bosonic modes, with exotic consequences for the emergent electronic properties. Here we show that the population of E$_{2g}$ phonons in the multiband superconductor MgB$_2$ can be selectively enhanced by femtosecond laser…
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In systems having an anisotropic electronic structure, such as the layered materials graphite, graphene and cuprates, impulsive light excitation can coherently stimulate specific bosonic modes, with exotic consequences for the emergent electronic properties. Here we show that the population of E$_{2g}$ phonons in the multiband superconductor MgB$_2$ can be selectively enhanced by femtosecond laser pulses, leading to a transient control of the number of carriers in the σ-electronic subsystem. The nonequilibrium evolution of the material optical constants is followed in the spectral region sensitive to both the a- and c-axis plasma frequencies and modeled theoretically, revealing the details of the $σ$-$π$ interband scattering mechanism in MgB$_2$.
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Submitted 17 January, 2017;
originally announced January 2017.
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Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers
Authors:
I. A. Nechaev,
S. V. Eremeev,
E. E. Krasovskii,
P. M. Echenique,
E. V. Chulkov
Abstract:
The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a breakthrough in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that qu…
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The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a breakthrough in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that quantum spin Hall insulators can be realized in ultra-thin films constructed from a trivial band insulator with strong spin-orbit coupling. The thinnest film with an inverted gap large enough for practical applications is a centrosymmetric sextuple layer built out of two inversely stacked non-centrosymmetric BiTeI trilayers. This nontrivial sextuple layer turns out to be the structure element of an artificially designed strong three-dimensional topological insulator Bi$_2$Te$_2$I$_2$. We reveal general principles of how a topological insulator can be composed from the structure elements of the BiTeX family (X=I, Br, Cl), which opens new perspectives towards engineering of topological phases.
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Submitted 29 March, 2017; v1 submitted 22 July, 2016;
originally announced July 2016.
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Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)
Authors:
Sebastian Fiedler,
Thomas Bathon,
Sergey V. Eremeev,
Oleg E. Tereshchenko,
Konstantin A. Kokh,
Evgueni V. Chulkov,
Paolo Sessi,
Hendrik Bentmann,
Matthias Bode,
Friedrich Reinert
Abstract:
The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tu…
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The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology.
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Submitted 20 November, 2015;
originally announced November 2015.
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Non-Dirac topological surface states in (SnTe)$_{n\geq2}$(Bi$_2$Te$_3$)$_{m=1}$
Authors:
S. V. Eremeev,
T. V. Menshchikova,
I. V. Silkin,
M. G. Vergniory,
P. M. Echenique,
E. V. Chulkov
Abstract:
A new type of topological spin-helical surface states was discovered in layered van der Waals bonded (SnTe)$_{n=2,3}$(Bi$_2$Te$_3$)$_{m=1}$ compounds which comprise two covalently bonded band inverted subsystems, SnTe and Bi$_2$Te$_3$, within a building block. This novel topological states demonstrate non-Dirac dispersion within the band gap. The dispersion of the surface state has two linear sect…
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A new type of topological spin-helical surface states was discovered in layered van der Waals bonded (SnTe)$_{n=2,3}$(Bi$_2$Te$_3$)$_{m=1}$ compounds which comprise two covalently bonded band inverted subsystems, SnTe and Bi$_2$Te$_3$, within a building block. This novel topological states demonstrate non-Dirac dispersion within the band gap. The dispersion of the surface state has two linear sections of different slope with shoulder feature between them. Such a dispersion of the topological surface state enables effective switch of the velocity of topological carriers by means of applying an external electric field.
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Submitted 28 May, 2015;
originally announced May 2015.
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Interface induced states at the boundary between a 3D topological insulator Bi$_2$Se$_3$ and a ferromagnetic insulator EuS
Authors:
S. V. Eremeev,
V. N. Men'shov,
V. V. Tugushev,
E. V. Chulkov
Abstract:
By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the Bi$_2$Se$_3$/EuS heterostructure, the gap opened in the spectrum of the topological state has a hybridization character and is shown to be controlled by the Bi$_2$Se$_3$…
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By means of relativistic density functional theory (DFT) calculations we study electron band structure of the topological insulator (TI) Bi$_2$Se$_3$ thin films deposited on the ferromagnetic insulator (FMI) EuS substrate. In the Bi$_2$Se$_3$/EuS heterostructure, the gap opened in the spectrum of the topological state has a hybridization character and is shown to be controlled by the Bi$_2$Se$_3$ film thickness, while magnetic contribution to the gap is negligibly small. We also analyzed the effect of Eu do** on the magnetization of the Bi$_2$Se$_3$ film and demonstrated that the Eu impurity induces magnetic moments on neighboring Se and Bi atoms an order of magnitude larger than the substrate-induced moments. Recent magnetic and magneto-transport measurements in EuS/Bi$_2$Se$_3$ heterostructure are discussed.
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Submitted 25 July, 2014;
originally announced July 2014.
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Modeling Near-Surface Bound Electron States in Three-Dimensional Topological Insulator: Analytical and Numerical Approaches
Authors:
V. N. Men'shov,
V. V. Tugushev,
T. V. Menshchikova,
S. V. Eremeev,
P. M. Echenique,
E. V. Chulkov
Abstract:
We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological phase engineering. Using the continual model of a semi-infinite 3D TI we study the surface potential (SP) effect caused by an attached ultrathin layer of 3D NI…
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We apply both analytical and ab-initio methods to explore heterostructures composed of a threedimensional topological insulator (3D TI) and an ultrathin normal insulator (NI) overlayer as a proof ground for the principles of the topological phase engineering. Using the continual model of a semi-infinite 3D TI we study the surface potential (SP) effect caused by an attached ultrathin layer of 3D NI on the formation of topological bound states at the interface. The results reveal that spatial profile and spectrum of these near-surface states strongly depend on both the sign and strength of the SP. Using ab-initio band structure calculations to take materials specificity into account, we investigate the NI/TI heterostructures formed by a single tetradymite-type quintuple or septuple layer block and the 3D TI substrate. The analytical continuum theory results relate the near-surface state evolution with the SP variation and are in good qualitative agreement with those obtained from density-functional theory (DFT) calculations. We predict also the appearance of the quasi-topological bound state on the 3D NI surface caused by a local band gap inversion induced by an overlayer.
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Submitted 27 June, 2014;
originally announced June 2014.
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Spin-helical Dirac states in graphene induced by polar-substrate surfaces with giant spin-orbit interaction: a new platform for spintronics
Authors:
S. V. Eremeev,
I. A. Nechaev,
P. M. Echenique,
E. V. Chulkov
Abstract:
Spintronics, or spin electronics, is aimed at efficient control and manipulation of spin degrees of freedom in electron systems. To comply with demands of nowaday spintronics, the studies of electron systems hosting giant spin-orbit-split electron states have become one of the most important directions providing us with a basis for desirable spintronics devices. In construction of such devices, it…
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Spintronics, or spin electronics, is aimed at efficient control and manipulation of spin degrees of freedom in electron systems. To comply with demands of nowaday spintronics, the studies of electron systems hosting giant spin-orbit-split electron states have become one of the most important directions providing us with a basis for desirable spintronics devices. In construction of such devices, it is also tempting to involve graphene, which has attracted great attention because of its unique and remarkable electronic properties and was recognized as a viable replacement for silicon in electronics. In this case, a challenging goal is to make graphene Dirac states spin-polarized. Here, we report on absolutely new promising pathway to create spin-polarized Dirac states based on coupling of graphene and polar-substrate surface states with giant Rashba-type spin-splitting. We demonstrate how the spin-helical Dirac states are formed in graphene deposited on the surface of BiTeCl. This coupling induces spin separation of the originally spin-degenerate graphene states and results in fully helical in-plane spin polarization of the Dirac electrons.
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Submitted 18 June, 2014;
originally announced June 2014.
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Magnetic proximity effect in the 3D topological insulator/ferromagnetic insulator heterostructure
Authors:
V. N. Men'shov,
V. V. Tugushev,
S. V. Eremeev,
P. M. Echenique,
E. V. Chulkov
Abstract:
We theoretically study the magnetic proximity effect in the three dimensional (3D) topological insulator/ferromagnetic insulator (TI/FMI) structures in the context of possibility to manage the Dirac helical state in TI. Within continual approach based on the $\mathbf{kp}$ Hamiltonian we predict that, when 3D TI is brought into contact with 3D FMI, the ordinary bound state arising at the TI/FMI int…
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We theoretically study the magnetic proximity effect in the three dimensional (3D) topological insulator/ferromagnetic insulator (TI/FMI) structures in the context of possibility to manage the Dirac helical state in TI. Within continual approach based on the $\mathbf{kp}$ Hamiltonian we predict that, when 3D TI is brought into contact with 3D FMI, the ordinary bound state arising at the TI/FMI interface becomes spin polarized due to the orbital mixing at the boundary. Whereas the wave function of FMI decays into the TI bulk on the atomic scale, the induced exchange field, which is proportional to the FMI magnetization, builds up at the scale of the penetration depth of the ordinary interface state. Such the exchange field opens the gap at the Dirac point in the energy spectrum of the topological bound state existing on the TI side of the interface. We estimate the dependence of the gap size on the material parameters of the TI/FMI contact.
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Submitted 7 May, 2013;
originally announced May 2013.
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Magnetic proximity effect at the 3D topological insulator/magnetic insulator interface
Authors:
S. V. Eremeev,
V. N. Men'shov,
V. V. Tugushev,
P. M. Echenique,
E. V. Chulkov
Abstract:
The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the 3D topological insulator/magnetic insulator (TI/MI) interface in Bi$_2$Se$_3$/MnSe(111) sy…
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The magnetic proximity effect is a fundamental feature of heterostructures composed of layers of topological insulators and magnetic materials since it underlies many potential applications in devices with novel quantum functionality. Within density functional theory we study magnetic proximity effect at the 3D topological insulator/magnetic insulator (TI/MI) interface in Bi$_2$Se$_3$/MnSe(111) system as an example. We demonstrate that a gapped ordinary bound state which spectrum depends on the interface potential arises in the immediate region of the interface. The gapped topological Dirac state also arises in the system owing to relocation to deeper atomic layers of topological insulator. The gap in the Dirac cone is originated from an overlap** of the topological and ordinary interfacial states. This result being also corroborated by the analytic model, is a key aspect of the magnetic proximity effect mechanism in the TI/MI structures.
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Submitted 4 April, 2013;
originally announced April 2013.
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Many-body effects on the Rashba-type spin splitting in bulk bismuth tellurohalides
Authors:
I. P. Rusinov,
I. A. Nechaev,
S. V. Eremeev,
C. Friedrich,
S. Blügel,
E. V. Chulkov
Abstract:
We report on many-body corrections to one-electron energy spectra of bulk bismuth tellurohalides---materials that exhibit a giant Rashba-type spin splitting of the band-gap edge states. We show that the corrections obtained in the one-shot $GW$ approximation noticeably modify the spin-orbit-induced spin splitting evaluated within density functional theory. We demonstrate that taking into account m…
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We report on many-body corrections to one-electron energy spectra of bulk bismuth tellurohalides---materials that exhibit a giant Rashba-type spin splitting of the band-gap edge states. We show that the corrections obtained in the one-shot $GW$ approximation noticeably modify the spin-orbit-induced spin splitting evaluated within density functional theory. We demonstrate that taking into account many-body effects is crucial to interpret the available experimental data.
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Submitted 25 April, 2013; v1 submitted 20 March, 2013;
originally announced March 2013.
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New topological surface state in layered topological insulators: unoccupied Dirac cone
Authors:
S. V. Eremeev,
I. V. Silkin,
T. V. Menshchikova,
A. P. Protogenov,
E. V. Chulkov
Abstract:
The unoccupied states in topological insulators Bi_2Se_3, PbSb_2Te_4, and Pb_2Bi_2Te_2S_3 are studied by the density functional theory methods. It is shown that a surface state with linear dispersion emerges in the inverted conduction band energy gap at the center of the surface Brillouin zone on the (0001) surface of these insulators. The alternative expression of Z_2 invariant allowed us to show…
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The unoccupied states in topological insulators Bi_2Se_3, PbSb_2Te_4, and Pb_2Bi_2Te_2S_3 are studied by the density functional theory methods. It is shown that a surface state with linear dispersion emerges in the inverted conduction band energy gap at the center of the surface Brillouin zone on the (0001) surface of these insulators. The alternative expression of Z_2 invariant allowed us to show that a necessary condition for the existence of the second Gamma Dirac cone is the presence of local gaps at the time reversal invariant momentum points of the bulk spectrum and change of parity in one of these points.
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Submitted 11 March, 2013;
originally announced March 2013.
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Rashba split surface states in BiTeBr
Authors:
S. V. Eremeev,
I. P. Rusinov,
I. A. Nechaev,
E. V. Chulkov
Abstract:
Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces…
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Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio calculations, we show that the ordered BiTeBr is energetically preferable as compared with the disordered one. We demonstrate that both Te- and Br-terminated surfaces of the ordered BiTeBr hold surface states with a giant spin-orbit splitting. The Te-terminated surface-state spin splitting has the Rashba-type behavior with the coupling parameter α_R ~ 2 eVÅ.
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Submitted 4 February, 2013;
originally announced February 2013.
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Unoccupied Topological States on Bismuth Chalcogenides
Authors:
D. Niesner,
Th. Fauster,
S. V. Eremeev,
T. V. Menshchikova,
Y. M. Koroteev,
A. P. Protogenov,
E. V. Chulkov,
O. E. Tereshchenko,
K. A. Kokh,
O. Alekperov,
A. Nadjafov,
N. Mamedov
Abstract:
The unoccupied part of the band structure of topological insulators Bi$_2$Te$_{x}$Se$_{3-x}$ ($x=0,2,3$) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface states are found at the center of the surface Brillouin zone at energies around 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in…
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The unoccupied part of the band structure of topological insulators Bi$_2$Te$_{x}$Se$_{3-x}$ ($x=0,2,3$) is studied by angle-resolved two-photon photoemission and density functional theory. For all surfaces linearly-dispersing surface states are found at the center of the surface Brillouin zone at energies around 1.3 eV above the Fermi level. Theoretical analysis shows that this feature appears in a spin-orbit-interaction induced and inverted local energy gap. This inversion is insensitive to variation of electronic and structural parameters in Bi$_2$Se$_3$ and Bi$_2$Te$_2$Se. In Bi$_2$Te$_3$ small structural variations can change the character of the local energy gap depending on which an unoccupied Dirac state does or does not exist. Circular dichroism measurements confirm the expected spin texture. From these findings we assign the observed state to an unoccupied topological surface state.
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Submitted 16 October, 2012; v1 submitted 11 October, 2012;
originally announced October 2012.
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Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides
Authors:
Sergey V. Eremeev,
Ilya A. Nechaev,
Yury M. Koroteev,
Pedro M. Echenique,
Evgueni V. Chulkov
Abstract:
Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction (SOI) in a two-dimensional (2D) electron system immersed in an inversion-asymmetric environment. The SOI induced spin-splitting of the 2D-electron state provides a…
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Spintronics is aimed at active controlling and manipulating the spin degrees of freedom in semiconductor devices. A promising way to achieve this goal is to make use of the tunable Rashba effect that relies on the spin-orbit interaction (SOI) in a two-dimensional (2D) electron system immersed in an inversion-asymmetric environment. The SOI induced spin-splitting of the 2D-electron state provides a basis for many theoretically proposed spintronic devices. However, the lack of semiconductors with large Rashba effect hinders realization of these devices in actual practice. Here we report on a giant Rashba-type spin splitting in 2D electron systems which reside at tellurium-terminated surfaces of bismuth tellurohalides. Among these semiconductors, BiTeCl stands out for its isotropic metallic surface-state band with the Gamma-point energy lying deep inside the bulk band gap. The giant spin-splitting of this band ensures a substantial spin asymmetry of the inelastic mean free path of quasiparticles with different spin orientations.
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Submitted 9 May, 2012;
originally announced May 2012.
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Surface and bulk Fermiology and band dispersion in non-centrosymmetric BiTeI
Authors:
Gabriel Landolt,
Sergey V. Eremeev,
Yury M. Koroteev,
Bartosz Slomski,
Stefan Muff,
Masaki Kobayashi,
Vladimir N. Strocov,
Thorsten Schmitt,
Ziya S. Aliev,
Mahammad B. Babanly,
Imamaddin R. Amiraslanov,
Evgueni V. Chulkov,
Jurg Osterwalder,
J. Hugo Dil
Abstract:
BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit interaction leads to a giant spin splitting in the bulk bands. Here we present high-resolution angle-resolved photoemission (ARPES) data in the UV and soft x-ray regime that clearly disentangle the surface from the bulk electronic structure. Spin-resolved UV-ARPES measurements on opposite, non-equivalent surfaces show id…
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BiTeI has a layered and non-centrosymmetric structure where strong spin-orbit interaction leads to a giant spin splitting in the bulk bands. Here we present high-resolution angle-resolved photoemission (ARPES) data in the UV and soft x-ray regime that clearly disentangle the surface from the bulk electronic structure. Spin-resolved UV-ARPES measurements on opposite, non-equivalent surfaces show identical spin structures, thus clarifying the surface state character. Soft x-ray ARPES data clearly reveal the spindle-torus shape of the bulk Fermi surface, induced by the spin-orbit interaction.
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Submitted 10 April, 2012;
originally announced April 2012.
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Topological Surface States with Persistent High Spin Polarization across Dirac Point in Bi$_{2}$Te$_{2}$Se and Bi$_{2}$Se$_{2}$Te
Authors:
K. Miyamoto,
A. Kimura,
T. Okuda,
H. Miyahara,
K. Kuroda,
H. Namatame,
M. Taniguchi,
S. V. Eremeev,
T. V. Menshchikova,
E. V. Chulkov,
K. A. Kokh,
O. E. Tereshchenko
Abstract:
Helical spin textures with the marked spin polarizations of topological surface states have been firstly unveiled by the state-of-the-art spin- and angle-resolved photoemission spectroscopy for two promising topological insulators Bi$_2$Te$_2$Se and Bi$_2$Se$_2$Te. The highly spin-polarized natures are found to be persistent across the Dirac point in both compounds. This novel finding paves a path…
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Helical spin textures with the marked spin polarizations of topological surface states have been firstly unveiled by the state-of-the-art spin- and angle-resolved photoemission spectroscopy for two promising topological insulators Bi$_2$Te$_2$Se and Bi$_2$Se$_2$Te. The highly spin-polarized natures are found to be persistent across the Dirac point in both compounds. This novel finding paves a pathway to extending their utilization of topological surface state for future spintronic applications.
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Submitted 20 March, 2012;
originally announced March 2012.
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Relocation of the topological surface state of Bi$_{2}$Se$_{3}$ beneath the surface by Ag intercalation
Authors:
M. Ye,
S. V. Eremeev,
K. Kuroda,
M. Nakatake,
S. Kim,
Y. Yamada,
E. E. Krasovskii,
E. V. Chulkov,
M. Arita,
H. Miyahara,
T. Maegawa,
K. Okamoto,
K. Miyamoto,
T. Okuda,
K. Shimada,
H. Namatame,
M. Taniguchi,
Y. Ueda,
A. Kimura
Abstract:
We studied the Ag-intercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, combined with a first principles calculations. We demonstrate that silver atoms deposited on the surface of Bi$_{2}$Se$_{3}$ are intercalated between the quintuple layer (QL) units of the crystal, causing a expansion of the van der Wa…
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We studied the Ag-intercalated 3D topological insulator Bi$_{2}$Se$_{3}$ by scanning tunneling microscopy/spectroscopy and angle-resolved photoemission spectroscopy, combined with a first principles calculations. We demonstrate that silver atoms deposited on the surface of Bi$_{2}$Se$_{3}$ are intercalated between the quintuple layer (QL) units of the crystal, causing a expansion of the van der Waals gaps and the detachment of topmost QLs from the bulk crystal. This leads to a relocation (in the real space) of the the topological state beneath the detached quintuple layers, accompanied by the emergence of parabolic and "M-shaped" trivial bands localized above the relocated topological states. These novel findings open a pathway to the engineering of Dirac fermions shielded from the ambient contamination and may facilitate the realization of fault-tolerant quantum devices.
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Submitted 26 December, 2011;
originally announced December 2011.
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Quasiparticle interference on the surface of 3D topological insulator Bi$_{2}$Se$_{3}$ induced by cobalt adatom in the absence of ferromagnetic ordering
Authors:
M. Ye,
S. V. Eremeev,
K. Kuroda,
E. E. Krasovskii,
E. V. Chulkov,
Y. Takeda,
Y. Saitoh,
K. Okamoto,
S. Y. Zhu,
K. Miyamoto,
M. Arita,
M. Nakatake,
T. Okuda,
Y. Ueda,
K. Shimada,
H. Namatame,
M. Taniguchi,
A. Kimura
Abstract:
Quasiparticle interference induced by cobalt adatoms on the surface of the topological insulator Bi$_{2}$Se$_{3}$ is studied by scanning tunneling microscopy, angle-resolved photoemission spectroscopy and X-ray magnetic circular dichroism. It is found that Co atoms are selectively adsorbed on top of Se sites and act as strong scatterers at the surface, generating anisotropic standing waves. A long…
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Quasiparticle interference induced by cobalt adatoms on the surface of the topological insulator Bi$_{2}$Se$_{3}$ is studied by scanning tunneling microscopy, angle-resolved photoemission spectroscopy and X-ray magnetic circular dichroism. It is found that Co atoms are selectively adsorbed on top of Se sites and act as strong scatterers at the surface, generating anisotropic standing waves. A long-range magnetic order is found to be absent, and the surface state Dirac cone remains gapless. The anisotropy of the standing wave is ascribed to the heavily warped iso-energy contour of unoccupied states, where the scattering is allowed due to a non-zero out-of-plane spin.
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Submitted 15 December, 2011; v1 submitted 14 December, 2011;
originally announced December 2011.
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Experimental verification of PbBi$_{2}$Te$_{4}$ as a 3D topological insulator
Authors:
K. Kuroda,
H. Miyahara,
M. Ye,
S. V. Eremeev,
Yu. M. Koroteev,
E. E. Krasovskii,
E. V. Chulkov,
S. Hiramoto,
C. Moriyoshi,
Y. Kuroiwa,
K. Miyamoto,
T. Okuda,
M. Arita,
K. Shimada,
H. Namatame,
M. Taniguchi,
Y. Ueda,
A. Kimura
Abstract:
The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological invariants $\mathbb{Z}_2$ are calculated from the {\it ab initio} band structure to be 1; (111). The observed two-dimensional iso-energy contours in the bulk energy…
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The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological invariants $\mathbb{Z}_2$ are calculated from the {\it ab initio} band structure to be 1; (111). The observed two-dimensional iso-energy contours in the bulk energy gap are found to be the largest among the known three-dimensional topological insulators. This opens a pathway to achieving a sufficiently large spin current density in future spintronic devices.
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Submitted 5 March, 2012; v1 submitted 24 November, 2011;
originally announced November 2011.
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New interpretation of the origin of 2DEG states at the surface of layered topological insulators
Authors:
S. V. Eremeev,
T. V. Menshchikova,
M. G. Vergniory,
E. V. Chulkov
Abstract:
On the basis of relativistic ab-initio calculations we show that the driving mechanism of simultaneous emergence of parabolic and M-shaped 2D electron gas (2DEG) bands at the surface of layered topological insulators as well as Rashba-splitting of the former states is an expansion of van der Waals (vdW) spacings caused by intercalation of metal atoms or residual gases. The expansion of vdW spacing…
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On the basis of relativistic ab-initio calculations we show that the driving mechanism of simultaneous emergence of parabolic and M-shaped 2D electron gas (2DEG) bands at the surface of layered topological insulators as well as Rashba-splitting of the former states is an expansion of van der Waals (vdW) spacings caused by intercalation of metal atoms or residual gases. The expansion of vdW spacings and emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of interband scattering found experimentally.
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Submitted 16 July, 2011;
originally announced July 2011.
