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Wide Effective Work-Function Tuning of Al/SiO$_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO$_2$ Interface
Authors:
Wonho Song,
Jung-Yong Lee,
Junhyung Kim,
**young Park,
Jaehyeong Jo,
Eunseok Hyun,
Jiwan Kim,
Dae** Eom,
Gahyun Choi,
Kibog Park
Abstract:
The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide…
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The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO$_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO$_2$ interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer.
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Submitted 20 August, 2022; v1 submitted 16 August, 2022;
originally announced August 2022.
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Magnetism on the boron-doped Si(111)-$\sqrt 3 \times \sqrt 3$ surface
Authors:
Chang-Youn Moon,
Dae** Eom,
Ja-Yong Koo
Abstract:
We investigate the possible magnetism on the Si(111)-$\sqrt 3 \times \sqrt 3$ surface, which is stabilized for highly boron-doped samples, by using first-principles calculations. When the silicon adatom on top of a boron atom is removed to form a defect structure, three silicon dangling bonds are exposed generating half-filled doubly degenerate energy levels in the band gap which stabilizes a loca…
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We investigate the possible magnetism on the Si(111)-$\sqrt 3 \times \sqrt 3$ surface, which is stabilized for highly boron-doped samples, by using first-principles calculations. When the silicon adatom on top of a boron atom is removed to form a defect structure, three silicon dangling bonds are exposed generating half-filled doubly degenerate energy levels in the band gap which stabilizes a local magnetic moment of 2 $μ_{\rm B}$. When there are many such defect structures adjacent one another, they are found to align antiferromagnetically. However, we demonstrate that the ferromagnetism can be stabilized by adjusting the number of electrons in defects, suggesting a possibility towards spintronic applications of this unique silicon surface structure.
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Submitted 19 November, 2017;
originally announced November 2017.
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Competing thermodynamic and dynamic factors select molecular assemblies on a gold surface
Authors:
Thomas K. Haxton,
Hui Zhou,
Isaac Tamblyn,
Dae** Eom,
Zonghai Hu,
Jeffrey B. Neaton,
Tony F. Heinz,
Stephen Whitelam
Abstract:
Controlling the self-assembly of surface-adsorbed molecules into nanostructures requires understanding physical mechanisms that act across multiple length and time scales. By combining scanning tunneling microscopy with hierarchical ab initio and statistical mechanical modeling of 1,4-substituted benzenediamine (BDA) molecules adsorbed on a gold (111) surface, we demonstrate that apparently simple…
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Controlling the self-assembly of surface-adsorbed molecules into nanostructures requires understanding physical mechanisms that act across multiple length and time scales. By combining scanning tunneling microscopy with hierarchical ab initio and statistical mechanical modeling of 1,4-substituted benzenediamine (BDA) molecules adsorbed on a gold (111) surface, we demonstrate that apparently simple nanostructures are selected by a subtle competition of thermodynamics and dynamics. Of the collection of possible BDA nanostructures mechanically stabilized by hydrogen bonding, the interplay of intermolecular forces, surface modulation, and assembly dynamics select at low temperature a particular subset: low free energy oriented linear chains of monomers, and high free energy branched chains.
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Submitted 28 November, 2013;
originally announced November 2013.
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A Scaling Behavior of Spectral Weight Changes in Perovskite Manganites La_{0.7-y}Pr_{y}Ca_{0.3}MnO_3
Authors:
K. H. Kim,
J. H. Jung,
D. J. Eom,
T. W. Noh,
Jaejun Yu,
E. J. Choi
Abstract:
Optical conductivity spectra of La_{0.7-y}Pr_{y}Ca_{0.3}MnO_3 were systematically investigated. For metallic samples, the spectral weight below 0.5 eV, whose magnitude can be represented by the effective carrier number N_{eff}(0.5 eV), increases as temperature becomes lower. Regardless of the Pr do**, all the measured values of N_{eff}(0.5 eV)/T_C fall into one scaling curve. This scaling beha…
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Optical conductivity spectra of La_{0.7-y}Pr_{y}Ca_{0.3}MnO_3 were systematically investigated. For metallic samples, the spectral weight below 0.5 eV, whose magnitude can be represented by the effective carrier number N_{eff}(0.5 eV), increases as temperature becomes lower. Regardless of the Pr do**, all the measured values of N_{eff}(0.5 eV)/T_C fall into one scaling curve. This scaling behavior could be explained by the theoretical model by Roeder et al. [Phys. Rev. Lett. 76, 1356 (1996)], which includes spin double exchange and Jahn-Teller lattice coupling to holes. With the Pr do**, far-infrared conductivities were found to be suppressed, probably due to the Anderson localization.
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Submitted 27 April, 1998;
originally announced April 1998.