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Probing Ferroelectric Phase Transitions in Barium Titanate Single Crystals via $\it{in-situ}$ Second Harmonic Generation Microscopy
Authors:
Benjamin Kirbus,
Samuel D. Seddon,
Iuliia Kiseleva,
Elke Beyreuther,
Michael Rüsing,
Lukas M. Eng
Abstract:
Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay…
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Ferroelectric materials play a crucial role in a broad range of technologies due to their unique properties that are deeply connected to the pattern and behavior of their ferroelectric (FE) domains. Chief among them, barium titanate (BaTiO$_3$; BTO) sees widespread applications such as in electronics but equally is a ferroelectric model system for fundamental research, e.g., to study the interplay of such FE domains, the domain walls (DWs), and their macroscopic properties, owed to BTO's multiple and experimentally accessible phase transitions. Here, we employ Second Harmonic Generation Microscopy (SHGM) to $\it{in-situ}$ investigate the cubic-to-tetragonal (at $\sim$126$^\circ$C) and the tetragonal-to-orthorhombic (at $\sim$5$^\circ$C) phase transition in single-crystalline BTO via 3-dimensional (3D) DW map**. We demonstrate that SHGM imaging provides the direct visualization of FE domain switching as well as the domain dynamics in 3D, shedding light on the interplay of the domain structure and the phase transition. These results allow us to extract the different transition temperatures locally, to unveil the hysteresis behavior, and to determine the type of phase transition at play (1st/2nd order) from the recorded SHGM data. The capabilities of SHGM in uncovering these crucial phenomena can easily be applied to other ferroelectrics to provide new possibilities for $\it{in-situ}$ engineering of advanced ferroic devices.
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Submitted 8 June, 2024;
originally announced June 2024.
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Towards the reproducible fabrication of conductive ferroelectric domain walls into lithium niobate bulk single crystals
Authors:
Julius Ratzenberger,
Iuliia Kiseleva,
Boris Koppitz,
Elke Beyreuther,
Manuel Zahn,
Joshua Gössel,
Peter A. Hegarty,
Zeeshan H. Amber,
Michael Rüsing,
Lukas M. Eng
Abstract:
Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring th…
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Ferroelectric domain walls (DWs) are promising structures for assembling future nano-electronic circuit elements on a larger scale, since reporting domain wall currents of up to 1 mA per single DW. One key requirement hereto is their reproducible manufacturing by gaining preparative control over domain size and domain wall conductivity (DWC). To date, most works on DWC have focused on exploring the fundamental electrical properties of individual DWs within single shot experiments, with emphasis on quantifying the origins for DWC. Very few reports exist when it comes to compare the DWC properties between two separate DWs, and literally nothing exists where issues of reproducibility in DWC devices have been addressed. To fill this gap while facing the challenge of finding guidelines achieving predictable DWC performance, we report on a procedure that allows us to reproducibly prepare single hexagonal domains of a predefined diameter into uniaxial ferroelectric (FE) lithium niobate (LN) single crystals of 200 and 300 micrometers thickness, respectively. We show that the domain diameter can be controlled with an error of a few percent. As-grown DWs are then subjected to a standard procedure of current-controlled high-voltage DWC enhancement, repetitively reaching a DWC increase of 6 orders of magnitude. While all resulting DWs show significantly enhanced DWC values, subtle features in their individual current-voltage (I-V) characteristics hint towards different 3D shapes into the bulk, with variations probably reflecting local heterogeneities by defects, DW pinning, and surface-near DW inclination, which seem to have a larger impact than expected.
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Submitted 13 May, 2024;
originally announced May 2024.
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High-temperature domain wall current in Mg-doped lithium niobate single crystals up to 400°C
Authors:
Uliana Yakhnevych,
Marlo Kunzner,
Leonard M. Verhoff,
Julius Ratzenberger,
Elke Beyreuther,
Michael Rüsing,
Simone Sanna,
Lukas M. Eng,
Holger Fritze
Abstract:
Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest here is the domain wall current (DWC) of charged DWs in 5mol\% Mg-doped lithium niobate single crystals; in contrast to former works, we extend the DWC study here…
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Conductive ferroelectric domain walls (DWs) represent a promising topical system for the development of nanoelectronic components and devices. DWs show very different properties as compared to their bulk counterparts. Of central interest here is the domain wall current (DWC) of charged DWs in 5mol\% Mg-doped lithium niobate single crystals; in contrast to former works, we extend the DWC study here to temperatures as high as 400$^\circ$C. Both the temporal stability and the thermal activation energies of 90 - 160 meV are readily deduced from current-voltage sweeps as recorded over multiple heating cycles. Our experimental work is backed up by atomistic modelling of the DWC. The latter suggests that a large band bending renders head-to-head and tail-to-tail DWs semimetallic. These detailed investigations underline the potential to extend DWC-based nanoelectronic applications even into the so-far unexplored high-temperature regime.
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Submitted 15 April, 2024; v1 submitted 1 April, 2024;
originally announced April 2024.
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Ferroelastic control of magnetic domain structure: direct imaging by Magnetic Force Microscopy
Authors:
S. D. Seddon,
C. R. S. Haines,
T. P. A. Hase,
M. R. Lees,
L. M. Eng,
M. Alexe,
M. A. Carpenter
Abstract:
Pyrrhotite, Fe$_7$S$_8$, provides an example of exceptionally strong magnetoelastic coupling through pinning of ferromagnetic domains by ferroelastic twins. Using direct imaging of both magnetic and ferroelastic domains by magnetic force microscopy (MFM), the mechanism by which this coupling controls local magnetic switching behaviour of regions on the pyrrhotite surface is revealed, and leads to…
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Pyrrhotite, Fe$_7$S$_8$, provides an example of exceptionally strong magnetoelastic coupling through pinning of ferromagnetic domains by ferroelastic twins. Using direct imaging of both magnetic and ferroelastic domains by magnetic force microscopy (MFM), the mechanism by which this coupling controls local magnetic switching behaviour of regions on the pyrrhotite surface is revealed, and leads to quantitative fitting of field dependent MFM phase shifts with bulk magnetometry data. It is shown that characteristic inflection points in the magnetometry data along certain direction, in particular $[\overline 120]^*_h$ of the hexagonal parent structure, are in fact caused by ferroelastic pinning of the magnetic moments.
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Submitted 27 March, 2024;
originally announced March 2024.
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Unidirectional Ray Polaritons in Twisted Asymmetric Stacks
Authors:
J. Álvarez-Cuervo,
M. Obst,
S. Dixit,
G. Carini,
A. I. F. Tresguerres-Mata,
C. Lanza,
E. Terán-García,
G. Álvarez-Pérez,
L. Fernández-Álvarez,
K. Diaz-Granados,
R. Kowalski,
A. S. Senerath,
N. S. Mueller,
L. Herrer,
J. M. De Teresa,
S. Wasserroth,
J. M. Klopf,
T. Beechem,
M. Wolf,
L. M. Eng,
T. G. Folland,
A. Tarazaga Martín-Luengo,
J. Martín-Sánchez,
S. C. Kehr,
A. Y. Nikitin
, et al. (3 additional authors not shown)
Abstract:
The emergence of a vast repository of van der Waals (vdW) materials supporting polaritons - light coupled to matter excitations - offers a plethora of different possibilities to tailor electromagnetic waves at the subwavelength-scale. In particular, the development of twistoptics - the study of the optical properties of twisted stacks of vdW materials - allows the directional propagation of phonon…
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The emergence of a vast repository of van der Waals (vdW) materials supporting polaritons - light coupled to matter excitations - offers a plethora of different possibilities to tailor electromagnetic waves at the subwavelength-scale. In particular, the development of twistoptics - the study of the optical properties of twisted stacks of vdW materials - allows the directional propagation of phonon polaritons (PhPs) along a single spatial direction, which has been coined as canalization. Here we demonstrate a complementary type of nanoscale unidirectional propagation that naturally emerges thanks to twistoptics: unidirectional ray polaritons (URPs). This natural phenomenon arises in two types of twisted hyperbolic stacks: homostructures of $α$-MoO$_3$ and heterostructures of $α$-MoO$_3$ and $β$-Ga$_2$O$_3$, each with very different thicknesses of its constituents. URPs are characterized by the absence of diffraction and the presence of a single phase of the propagating field. Importantly, we demonstrate that this ray behavior can be tuned by means of both relative twist angle and illumination frequency variations. Additionally, an unprecedented "pinwheel-like" propagation emerges at specific twist angles of the homostructure. We show that URPs emerge due to the twist between asymmetrically stacked biaxial slabs, while the shear effect in monoclinic $β$-Ga$_2$O$_3$ is of minor importance. Our findings demonstrate a natural way to excite unidirectional ray-like PhPs and offer a unique platform for controlling the propagation of PhPs at the nanoscale with many potential applications like nanoimaging, (bio)-sensing or polaritonic thermal management.
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Submitted 25 April, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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Lattice dynamics of LiNb$_{\text{1-x}}$Ta$_{\text{x}}$O$_{\text{3}}$ solid solutions: Theory and experiment
Authors:
Felix Bernhardt,
Soham Gharat,
Alexander Kapp,
Florian Pfeiffer,
Robin Buschbeck,
Franz Hempel,
Oleksiy Pashkin,
Susanne C. Kehr,
Michael Rüsing,
Simone Sanna,
Lukas M. Eng
Abstract:
Lithium niobate (LNO) and lithium tantalate (LTO) see widespread use in fundamental research and commercial technologies reaching from electronics over classical optics to integrated quantum communication. In recent years, the mixed crystal system lithium niobate tantalate (LNT) allows for the dedicate engineering of material properties by combining the advantages of the two parental materials LNO…
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Lithium niobate (LNO) and lithium tantalate (LTO) see widespread use in fundamental research and commercial technologies reaching from electronics over classical optics to integrated quantum communication. In recent years, the mixed crystal system lithium niobate tantalate (LNT) allows for the dedicate engineering of material properties by combining the advantages of the two parental materials LNO and LTO. Vibrational spectroscopies such as Raman spectroscopy or (Fourier transform) infrared spectroscopy are vital techniques to provide detailed insight into the material properties, which is central to the analysis and optimization of devices. In this work, we present a joint experimental-theoretical approach allowing to unambiguously assign the spectral features in the LNT material family through both Raman and IR spectroscopy, as well as to provide an in-depth explanation for the observed scattering efficiencies based on first-principles calculations. The phononic contribution to the static dielectric tensor is calculated from the experimental and theoretical data using the generalized Lyddane-Sachs-Teller relation and compared with the results of the first-principles calculations. The joint methodology can be readily expanded to other materials and serves, e.g., as the basis for studying the role of point defects or do**.
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Submitted 26 March, 2024;
originally announced March 2024.
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Hot electron dynamics in a semiconductor nanowire under intense THz excitation
Authors:
Andrei Luferau,
Maximilian Obst,
Stephan Winnerl,
Alexej Pashkin,
Susanne C. Kehr,
Emmanouil Dimakis,
Felix G. Kaps,
Osama Hatem,
Kalliopi Mavridou,
Lukas M. Eng,
Manfred Helm
Abstract:
We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distri…
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We report THz-pump / mid-infrared probe near-field studies on Si-doped GaAs-InGaAs core-shell nanowires utilizing THz radiation from the free-electron laser FELBE. Upon THz excitation of free carriers, we observe a red shift of the plasma resonance in both amplitude and phase spectra, which we attribute to the heating up of electrons in the conduction band. The simulation of heated electron distributions anticipates a significant electron population in both L- and X-valleys. The two-temperature model is utilized for a quantitative analysis of the dynamics of the electron gas temperature under THz pum** at various power levels.
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Submitted 25 March, 2024;
originally announced March 2024.
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Comparative study of photo-induced electronic transport along ferroelectric domain walls in lithium niobate single crystals
Authors:
Lili Ding,
Elke Beyreuther,
Boris Koppitz,
Konrad Kempf,
Jianhua Ren,
Wei** Chen,
Michael Rüsing,
Yue Zheng,
Lukas M. Eng
Abstract:
Ferroelectric domain wall conductivity (DWC) is an intriguing functional property, that can be controlled through external stimuli such as electric and mechanical fields. Optical-field control, as a non-invasive flexible handle, has rarely been applied so far, but significantly expands the possibility for both tuning and probing DWC. On the one hand, as known from Second-Harmonic, Raman, and CARS…
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Ferroelectric domain wall conductivity (DWC) is an intriguing functional property, that can be controlled through external stimuli such as electric and mechanical fields. Optical-field control, as a non-invasive flexible handle, has rarely been applied so far, but significantly expands the possibility for both tuning and probing DWC. On the one hand, as known from Second-Harmonic, Raman, and CARS micro-spectroscopy, the optical in-and-out approach delivers parameters on the DW distribution, the DW inclination, and probes the DW vibrational modes; on the other hand, photons might be applied also to directly generate charge carriers within the DW, hence acting as a functional and spectrally tunable probe to deduce the integral or local absorption properties and bandgaps of conductive DWs. Here, we report on such an optoelectronic approach by investigating the photo-induced DWC (PI-DWC) in DWs of the model system lithium niobate, a material that is well known for hosting conductive DWs. We compare three different crystals containing different numbers of domain walls: (A) none, (B) one, and (C) many conductive DWs. All samples are inspected for their current-voltage (I-V) behavior (i) in darkness, and (ii) for different illumination wavelengths swept from 500 nm down to 310 nm. All samples show their maximum PI-DWC at 310 nm, i.e., at the optical bandgap of lithium niobate; moreover, sample (C) reaches PI-DWCs of several $μ$A. Interestingly, a noticeable PI-DWC is also observed for sub-bandgap illumination, i.e., wavelengths as high as 500 nm, hinting towards the existence and decisive role of electronic in-gap states that contribute to the electronic transport along DWs. Finally, conductive atomic force microscopy (c-AFM) investigations under illumination proved that the PI-DWC is confined to the DW area, and does not originate from photo-induced bulk conductivity.
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Submitted 27 February, 2024;
originally announced February 2024.
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Polarization sensitivity in scattering-type scanning near-field optical microscopy -- towards nanoellipsometry
Authors:
Felix G. Kaps,
Susanne C. Kehr,
Lukas M. Eng
Abstract:
Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale, and even below. Nevertheless, mostly the out-of-plane electric field component is considered here due to the lightning rod effect of the elongated s-SNOM tip being orders of magnitude stronger as compared to any…
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Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale, and even below. Nevertheless, mostly the out-of-plane electric field component is considered here due to the lightning rod effect of the elongated s-SNOM tip being orders of magnitude stronger as compared to any in-plane field component. Nonetheless, the fundamental understanding of resonantly excited near-field coupled systems clearly allows us to take profit from all vectorial components, especially also from the in-plane ones. In this paper, we theoretically and experimentally explore how linear polarization control of both near-field illumination and detection, can constructively be implemented to (non-)resonantly couple to selected sample permittivity tensor components, e.g. explicitly also to the in-plane directions. When applying the point-dipole model, we show that resonantly excited samples respond with a strong near-field signal, to all linear polarization angles. We then experimentally investigate the polarization-dependent responses for both non-resonant (Au) and phonon-resonant (3C-SiC) sample excitations at a 10.6~$μ$m and 10.7~$μ$m incident wavelength using a tabletop CO$_2$ laser. Varying the illumination polarization angle thus allows for quantitatively comparing the scattered near-field signatures for the two wavelengths. Finally, we compare our experimental data to simulation results, and thus gain the fundamental understanding of the polarization's influence on the near-field interaction. As a result, the near-field components parallel and perpendicular to the sample surface can be easily disentangled and quantified through their polarization signatures, connecting them directly to the sample's local permittivity.
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Submitted 11 August, 2023;
originally announced August 2023.
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Hall mobilities and sheet carrier densities in a single LiNbO$_3$ conductive ferroelectric domain wall
Authors:
Henrik Beccard,
Elke Beyreuther,
Benjamin Kirbus,
Samuel D. Seddon,
Michael Rüsing,
Lukas M. Eng
Abstract:
For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the…
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For the last decade, conductive domain walls (CDWs) in single crystals of the uniaxial model ferroelectric lithium niobate (LiNbO$_3$, LNO) have shown to reach resistances more than 10 orders of magnitude lower as compared to the surrounding bulk, with charge carriers being firmly confined to sheets of a few nanometers in width. LNO thus currently witnesses an increased attention since bearing the potential for variably designing room-temperature nanoelectronic circuits and devices based on such CDWs. In this context, the reliable determination of the fundamental transport parameters of LNO CDWs, in particular the 2D charge carrier density $n_{2D}$ and the Hall mobility $μ_{H}$ of the majority carriers, are of highest interest. In this contribution, we present and apply a robust and easy-to-prepare Hall-effect measurement setup by adapting the standard 4-probe van-der-Pauw method to contact a single, hexagonally-shaped domain wall that fully penetrates the 200-$μ$m-thick LNO bulk single crystal. We then determine $n_{2D}$ and $μ_{H}$ for a set of external magnetic fields $B$ and prove the expected cosine-like angular dependence of the Hall voltage. Lastly, we present photo-Hall measurements of one and the same DW, by determining the impact of super-bandgap illumination on the 2D charge carrier density $n_{2D}$.
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Submitted 6 November, 2023; v1 submitted 31 July, 2023;
originally announced August 2023.
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R2D2 -- An equivalent-circuit model that quantitatively describes domain wall conductivity in ferroelectric LiNbO$_3$
Authors:
Manuel Zahn,
Elke Beyreuther,
Iuliia Kiseleva,
Ahmed Samir Lotfy,
Conor J. McCluskey,
Jesi R. Maguire,
Ahmet Suna,
Michael Rüsing,
J. Marty Gregg,
Lukas M. Eng
Abstract:
Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differ…
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Ferroelectric domain wall (DW) conductivity (DWC) can be attributed to two separate mechanisms: (a) the injection/ejection of charge carriers across the Schottky barrier formed at the (metal-) electrode-DW junction and (b) the transport of those charge carriers along the DW. Current-voltage (IU) characteristics, recorded at variable temperatures from LiNbO$_3$ (LNO) DWs, are clearly able to differentiate between these two contributions. Practically, they allow us here to directly quantify the physical parameters relevant for the two mechanisms (a) and (b) mentioned above. These are, e.g., the resistance of the DW, the saturation current, the ideality factor, and the Schottky barrier height of the electrode/DW junction. Furthermore, the activation energies needed to initiate the thermally-activated electronic transport along the DWs, can be extracted. In addition, we show that electronic transport along LiNbO$_3$ DWs can be elegantly viewed and interpreted in an adapted semiconductor picture based on a double-diode/double-resistor equivalent circuit model, the R2D2 model. Finally, our R2D2 model was checked for its universality by fitting the DWC data not only to z-cut LNO bulk DWs, but equally to z-cut thin-film LNO DWs, and DWC from x-cut DWs as reported in literature.
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Submitted 19 November, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Comparing Transmission- and Epi-BCARS: A Transnational Round Robin on Solid State Materials
Authors:
Franz Hempel,
Federico Vernuccio,
Lukas König,
Robin Buschbeck,
Michael Rüsing,
Giulio Cerullo,
Dario Polli,
Lukas M. Eng
Abstract:
Broadband coherent anti-Stokes Raman scattering (BCARS) is an advanced Raman spectroscopy method that combines the spectral sensitivity of spontaneous Raman scattering (SR) with the increased signal intensity of single-frequency coherent Raman techniques. These two features make BCARS particularly suitable for ultra-fast imaging of heterogeneous samples, as already shown in biomedicine. Recent stu…
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Broadband coherent anti-Stokes Raman scattering (BCARS) is an advanced Raman spectroscopy method that combines the spectral sensitivity of spontaneous Raman scattering (SR) with the increased signal intensity of single-frequency coherent Raman techniques. These two features make BCARS particularly suitable for ultra-fast imaging of heterogeneous samples, as already shown in biomedicine. Recent studies demonstrated that BCARS also shows exceptional spectroscopic capabilities when inspecting crystalline materials like lithium niobate and lithium tantalate, and can be used for fast imaging of ferroelectric domain walls. These results strongly suggest the extension of BCARS towards new imaging applications like map** defects, strain, or dopant levels, similar to standard SR imaging. Despite these advantages, BCARS suffers from a spurious and chemically unspecific non-resonant background (NRB) that distorts and shifts the Raman peaks. Post-processing numerical algorithms are then used to remove the NRB and to obtain spectra comparable to SR results. Here, we show the reproducibility of BCARS by conducting an internal Round Robin with two different BCARS experimental setups, comparing the results on different crystalline materials of increasing structural complexity: diamond, 6H-SiC, KDP, and KTP. First, we compare the detected and phase-retrieved signals, the setup-specific NRB-removal steps, and the mode assignment. Subsequently, we demonstrate the versatility of BCARS by showcasing how the selection of pump wavelength, pulse width, and detection geometry can be tailored to suit the specific objectives of the experiment. Finally, we compare and optimize measurement parameters for the high-speed, hyperspectral imaging of ferroelectric domain walls in lithium niobate.
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Submitted 6 September, 2023; v1 submitted 16 June, 2023;
originally announced June 2023.
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Vibrational properties of LiNbO$_3$ and LiTaO$_3$ under uniaxial stress
Authors:
Ekta Singh,
Mike N. Pionteck,
Sven Reitzig,
Michael Lange,
Michael Rüsing,
Lukas M. Eng,
Simone Sanna
Abstract:
Structural strain severely impacts material properties such as the linear and non-linear optical response. Moreover, strain plays a key role, e.g., in the physics of ferroelectrics and in particular of their domain walls. $μ$-Raman spectroscopy is a well-suited technique for the investigation of such strain effects, as it allows to measure the lattice dynamics locally. However, quantifying and rec…
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Structural strain severely impacts material properties such as the linear and non-linear optical response. Moreover, strain plays a key role, e.g., in the physics of ferroelectrics and in particular of their domain walls. $μ$-Raman spectroscopy is a well-suited technique for the investigation of such strain effects, as it allows to measure the lattice dynamics locally. However, quantifying and reconstructing strain fields from Raman maps requires knowledge on the strain dependence of phonon frequencies. In this work, we have analyzed both theoretically and experimentally the phonon frequencies in the widely used ferroelectrics lithium niobate and lithium tantalate as a function of uniaxial strain via density functional theory and $μ$-Raman spectroscopy. Overall, we find a good agreement between our $ab$ $initio$ models and the experimental data performed with a stress cell. The majority of phonons show an increase in frequency under compressive strain, while the opposite is observed for tensile strains. Moreover, for E-type phonons, we observe the lifting of degeneracy already at moderate strain fields (i.e. at $\pm0.2~\%$) along the x and y directions. This work hence allows for the systematic analysis of 3D strains in modern-type bulk and thin-film devices assembled from lithium niobate and tantalate.
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Submitted 25 October, 2022;
originally announced October 2022.
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Out-of-equilibrium optomechanical resonance self-excitation
Authors:
P. Milde,
M. Langenhorst,
H. Hölscher,
J. Rottmann-Matthes,
D. Hundertmark,
L. M. Eng,
R. Hoffmann-Vogel
Abstract:
The fundamental sensitivity limit of atomic force microscopy is strongly correlated to the thermal noise of the cantilever oscillation. A method to suppress this unwanted noise is to reduce the bandwidth of the measurement, but this approach is limited by the speed of the measurement and the width of the cantilever resonance, commonly defined through the quality factor Q. However, it has been show…
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The fundamental sensitivity limit of atomic force microscopy is strongly correlated to the thermal noise of the cantilever oscillation. A method to suppress this unwanted noise is to reduce the bandwidth of the measurement, but this approach is limited by the speed of the measurement and the width of the cantilever resonance, commonly defined through the quality factor Q. However, it has been shown that optomechanical resonances in interferometers might affect the cantilever oscillations resulting in an effective quality factor Q$_{eff}$ . When the laser power is sufficiently increased the cantilever oscillations might even reach the regime of self-oscillation. In this self-oscillation state, the noise of the system is partially determined by the interaction with the laser light far from equilibrium. Here, we show and discuss how tuning of the laser power leads to nonlinear optomechanical effects that can dramatically increase the effective quality factor of the cantilever leading to out-of-equilibrium noise. We model the effects using a fourth order nonlinearity of the dam** coefficient.
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Submitted 24 August, 2022;
originally announced August 2022.
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Impact of 3D curvature on the polarization orientation in non-Ising domain walls
Authors:
Ulises Acevedo-Salas,
Boris Croes,
Yide Zhang,
Olivier Cregut,
Kokou Dodzi Dorkenoo,
Benjamin Kirbus,
Ekta Singh,
Henrik Beccard,
Michael Rüsing,
Lukas M. Eng,
Riccardo Hertel,
Eugene A. Eliseev,
Anna N. Morozovska,
Salia Cherifi-Hertel
Abstract:
Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in L…
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Ferroelectric domain boundaries are quasi-two-dimensional functional interfaces with high prospects for nanoelectronic applications. Despite their reduced dimensionality, they can exhibit complex non-Ising polarization configurations and unexpected physical properties. Here, the impact of the three-dimensional (3D) curvature on the polarization profile of nominally uncharged 180° domain walls in LiNbO3 is studied using second-harmonic generation microscopy and 3D polarimetry analysis. Correlations between the domain wall curvature and the variation of its internal polarization unfold in the form of modulations of the Néel-like character, which we attribute to the flexoelectric effect. While the Néel-like character originates mainly from the tilting of the domain wall, the internal polarization adjusts its orientation due to the synergetic upshot of dipolar and monopolar bound charges and their variation with the 3D curvature. Our results show that curved interfaces in solid crystals may offer a rich playground for tailoring nanoscale polar states.
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Submitted 4 July, 2022;
originally announced July 2022.
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Tuning the domain wall conductivity in bulk lithium niobate by uniaxial stress
Authors:
Ekta Singh,
Henrik Beccard,
Zeeshan H. Amber,
Julius Ratzenberger,
Clifford W. Hicks,
Michael Rüsing,
Lukas M. Eng
Abstract:
Conductive domain walls (CDWs) in insulating ferroelectrics have recently attracted considerable attention due to their unique topological, optical, and electronic properties, and offer potential applications such as in memory devices or re-writable circuitry. The electronic properties of domain walls (DWs) can be tuned by the application of strain, hence controlling the charge carrier density at…
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Conductive domain walls (CDWs) in insulating ferroelectrics have recently attracted considerable attention due to their unique topological, optical, and electronic properties, and offer potential applications such as in memory devices or re-writable circuitry. The electronic properties of domain walls (DWs) can be tuned by the application of strain, hence controlling the charge carrier density at DWs. In this work, we study the influence of uniaxial stress on the conductivity of DWs in the bulk single crystal lithium niobate (LiNbO$_3$). Using conductive atomic force microscopy (cAFM), we observe a large asymmetry in the conductivity of DWs, where only negatively screened walls, so called head-to-head DWs, are becoming increasingly conductive, while positively screened, tail-to-tails DWs, show a decrease in conductivity. This asymmetry of DW conductivity agrees with our theoretical model based on the piezoelectric effect. In addition, we observed that the current in the DW increases up to an order of magnitude for smaller compressive stresses of 100 MPa. This response of DWs remained intact for multiple stress cycles over 2 months, opening a path for future applications.
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Submitted 4 May, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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Large Hall electron mobilities in head-to-head BaTiO$_3$-domain walls
Authors:
Henrik Beccard,
Benjamin Kirbus,
Elke Beyreuther,
Michael Rüsing,
Petr Bednyakov,
Jirka Hlinka,
Lukas M. Eng
Abstract:
Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4…
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Strongly charged head-to-head (H2H) domain walls (DWs) that are purposely engineered along the [110] crystallographic orientation into ferroelectric BaTiO$_3$ single crystals have been proposed as novel 2-dimensional electron gases (2DEGs) due to their significant domain wall conductivity (DWC). Here, we quantify these 2DEG properties through dedicated Hall-transport measurements in van-der-Pauw 4-point geometry at room temperature, finding the electron mobility to reach around 400~cm$^2$(Vs)$^{-1}$, while the 2-dimensional charge density amounts to ~7$\times$10$^3$cm$^{-2}$. We underline the necessity to take account of thermal and geometrical-misalignment offset voltages by evaluating the Hall resistance under magnetic-field sweeps, since otherwise dramatic errors of several hundred percent in the derived mobility and charge density values can occur. Apart from the specific characterization of the conducting BaTiO$_3$ DW, we propose the method as an easy and fast way to quantitatively characterize ferroic conducting DWs, complementary to previously proposed scanning-probe-based Hall-potential analyses.
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Submitted 24 April, 2022;
originally announced April 2022.
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Antiskyrmions and their electrical footprint in crystalline mesoscale structures of Mn$_{1.4}$PtSn
Authors:
Moritz Winter,
Francisco J. T. Goncalves,
Ivan Soldatov,
Yangkun He,
Belén E. Zúňiga Céspedes,
Peter Milde,
Kilian Lenz,
Sandra Hamann,
Marc Uhlarz,
Praveen Vir,
Markus König,
Philip J. W. Moll,
Richard Schlitz,
Sebastian T. B. Goennenwein,
Lukas M. Eng,
Rudolf Schaefer,
Jochen Wosnitza,
Claudia Felser,
Jacob Gayles,
Toni Helm
Abstract:
Skyrmionic materials hold the potential for future information technologies, such as racetrack memories. Key to that advancement are systems that exhibit high tunability and scalability, with stored information being easy to read and write by means of all-electrical techniques. Topological magnetic excitations such as skyrmions and antiskyrmions, give rise to a characteristic topological Hall effe…
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Skyrmionic materials hold the potential for future information technologies, such as racetrack memories. Key to that advancement are systems that exhibit high tunability and scalability, with stored information being easy to read and write by means of all-electrical techniques. Topological magnetic excitations such as skyrmions and antiskyrmions, give rise to a characteristic topological Hall effect. However, the electrical detection of antiskyrmions, in both thin films and bulk samples has been challenging to date. Here, we apply magneto-optical microscopy combined with electrical transport to explore the antiskyrmion phase as it emerges in crystalline mesoscale structures of the Heusler magnet Mn$_{1.4}$PtSn. We reveal the Hall signature of antiskyrmions in line with our theoretical model, comprising anomalous and topological components. We examine its dependence on the vertical device thickness, field orientation, and temperature. Our atomistic simulations and experimental anisotropy studies demonstrate the link between antiskyrmions and a complex magnetism that consists of competing ferromagnetic, antiferromagnetic, and chiral exchange interactions, not captured by micromagnetic simulations.
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Submitted 15 March, 2023; v1 submitted 3 November, 2021;
originally announced November 2021.
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Germanium monosulfide as a natural platform for highly anisotropic THz polaritons
Authors:
Tobias Nörenberg,
Gonzalo Álvarez-Pérez,
Maximilian Obst,
Lukas Wehmeier,
Franz Hempel,
J. Michael Klopf,
Alexey Y. Nikitin,
Susanne C. Kehr,
Lukas M. Eng,
Pablo Alonso-González,
Thales V. A. G. de Oliveira
Abstract:
Terahertz (THz) electromagnetic radiation is key to optically access collective excitations such as magnons (spins), plasmons (electrons), or phonons (atomic vibrations), thus bridging between optics and solid-state physics. Confinement of THz light to the nanometer length scale is desirable for local probing of such excitations in low dimensional systems, thereby inherently circumventing the larg…
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Terahertz (THz) electromagnetic radiation is key to optically access collective excitations such as magnons (spins), plasmons (electrons), or phonons (atomic vibrations), thus bridging between optics and solid-state physics. Confinement of THz light to the nanometer length scale is desirable for local probing of such excitations in low dimensional systems, thereby inherently circumventing the large footprint and low spectral density of far-field THz optics. For that purpose, phonon polaritons (PhPs, i.e., light coupled to lattice vibrations in polar crystals) in anisotropic van der Waals (vdW) materials have recently emerged as a promising platform for THz nanooptics; yet the amount of explored, viable materials is still exiguous. Hence, there is a demand for the exploration of novel materials that feature not only THz PhPs at different spectral regimes, but also exhibit unique anisotropic (directional) electrical, thermoelectric, and vibronic properties. To that end, we introduce here the semiconducting alpha-germanium(II) sulfide (GeS) as an intriguing candidate. By employing THz nano-spectroscopy supported by theoretical analysis, we provide a thorough characterization of the different in-plane hyperbolic and elliptical PhP modes in GeS. We find not only PhPs with long life times ($τ$ > 2 ps) and excellent THz light confinement ($λ_0/λ$ > 45), but also an intrinsic, phonon-induced anomalous dispersion as well as signatures of naturally occurring PhP canalization within one single GeS slab.
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Submitted 4 November, 2021; v1 submitted 25 October, 2021;
originally announced October 2021.
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Atomic Layer Deposition of Yttrium Iron Garnet Thin Films for 3D Magnetic Structures
Authors:
M. Lammel,
D. Scheffler,
D. Pohl,
P. Swekis,
S. Reitzig,
H. Reichlova,
R. Schlitz,
K. Geishendorf,
L. Siegl,
B. Rellinghaus,
L. M. Eng,
K. Nielsch,
S. T. B. Goennenwein,
A. Thomas
Abstract:
A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do…
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A wide variety of new phenomena such as novel magnetization configurations have been predicted to occur in three dimensional magnetic nanostructures. However, the fabrication of such structures is often challenging due to the specific shapes required, such as magnetic tubes and spirals. Furthermore, the materials currently used to assemble these structures are predominantly magnetic metals that do not allow to study the magnetic response of the system separately from the electronic one. In the field of spintronics, the prototypical material used for such experiments is the ferrimagnetic insulator yttrium iron garnet (Y$_3$Fe$_5$O$_{12}$, YIG). YIG is one of the best materials especially for magnonic studies due to its low Gilbert dam**. Here, we report the first successful fabrication of YIG thin films via atomic layer deposition. To that end we utilize a supercycle approach based on the combination of sub-nanometer thin layers of the binary systems Fe$_2$O$_3$ and Y$_2$O$_3$ in the correct atomic ratio on Y$_3$Al$_5$O$_{12}$ substrates with a subsequent annealing step. Our process is robust against typical growth-related deviations, ensuring a good reproducibility. The ALD-YIG thin films exhibit a good crystalline quality as well as magnetic properties comparable to other deposition techniques. One of the outstanding characteristics of atomic layer deposition is its ability to conformally coat arbitrarily-shaped substrates. ALD hence is the ideal deposition technique to grant an extensive freedom in choosing the shape of the magnetic system. The atomic layer deposition of YIG enables the fabrication of novel three dimensional magnetic nanostructures, which in turn can be utilized for experimentally investigating the phenomena predicted in those structures.
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Submitted 18 January, 2022; v1 submitted 20 April, 2021;
originally announced April 2021.
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Field-induced reorientation of helimagnetic order in Cu$_2$OSeO$_3$ probed by magnetic force microscopy
Authors:
Peter Milde,
Laura Köhler,
Erik Neuber,
Philipp Ritzinger,
Markus Garst,
Andreas Bauer,
Christian Pfleiderer,
Helmuth Berger,
Lukas M. Eng
Abstract:
Cu$_2$OSeO$_3$ is an insulating skyrmion-host material with a magnetoelectric coupling giving rise to an electric polarization with a characteristic dependence on the magnetic field $\vec H$. We report magnetic force microscopy imaging of the helical real-space spin structure on the surface of a bulk single crystal of Cu$_2$OSeO$_3$. In the presence of a magnetic field, the helimagnetic order in g…
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Cu$_2$OSeO$_3$ is an insulating skyrmion-host material with a magnetoelectric coupling giving rise to an electric polarization with a characteristic dependence on the magnetic field $\vec H$. We report magnetic force microscopy imaging of the helical real-space spin structure on the surface of a bulk single crystal of Cu$_2$OSeO$_3$. In the presence of a magnetic field, the helimagnetic order in general reorients and acquires a homogeneous component of the magnetization, resulting in a conical arrangement at larger fields. We investigate this reorientation process at a temperature of 10~K for fields close to the crystallographic $\langle 110\rangle$ direction that involves a phase transition at $H_{c1}$. Experimental evidence is presented for the formation of magnetic domains in real space as well as for the microscopic origin of relaxation events that accompany the reorientation process. In addition, the electric polarization is measured by means of Kelvin-probe force microscopy. We show that the characteristic field dependency of the electric polarization originates in this helimagnetic reorientation process. Our experimental results are well described by an effective Landau theory previously invoked for MnSi, that captures the competition between magnetocrystalline anisotropies and Zeeman energy.
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Submitted 22 March, 2021;
originally announced March 2021.
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Surface pinning and triggered unwinding of skyrmions in a cubic chiral magnet
Authors:
Peter Milde,
Erik Neuber,
Andreas Bauer,
Christian Pfleiderer,
Lukas M. Eng
Abstract:
In the cubic chiral magnet Fe$_{1-x}$Co$_{x}$Si a metastable state comprising of topologically nontrivial spin whirls, so-called skyrmions, may be preserved down to low temperatures by means of field cooling the sample. This metastable skyrmion state is energetically separated from the topologically trivial ground state by a considerable potential barrier, a phenomenon also referred to as topologi…
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In the cubic chiral magnet Fe$_{1-x}$Co$_{x}$Si a metastable state comprising of topologically nontrivial spin whirls, so-called skyrmions, may be preserved down to low temperatures by means of field cooling the sample. This metastable skyrmion state is energetically separated from the topologically trivial ground state by a considerable potential barrier, a phenomenon also referred to as topological protection. Using magnetic force microscopy on the surface of a bulk crystal, we show that certain positions are preferentially and reproducibly decorated with metastable skyrmions, indicating that surface pinning plays a crucial role. Increasing the magnetic field allows an increasing number of skyrmions to overcome the potential barrier, and hence to transform into the ground state. Most notably, we find that the unwinding of individual skyrmions may be triggered by the magnetic tip itself, however, only when its magnetization is aligned parallel to the external field. This implies that the stray field of the tip is key for locally overcoming the topological protection. Both the control of the position of topologically nontrivial states as well as their creation and annihilation on demand pose important challenges in the context of potential skyrmionic applications.
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Submitted 23 March, 2021; v1 submitted 22 March, 2021;
originally announced March 2021.
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Architecture of nanoscale ferroelectric domains in GaMo4S8
Authors:
Erik Neuber,
Peter Milde,
Adam Butykai,
Sandor Bordacs,
Hiroyuki Nakamura,
Takeshi Waki,
Yoshikazu Tabata,
Korbinian Geirhos,
Peter Lunkenheimer,
Istvan Kézsmárki,
Petr Ondrejkovic,
Jirka Hlinka,
Lukas M. Eng
Abstract:
Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a lacunar spinel crystal that can be viewed as a spin-hole analogue of its GaV4S8 counterpart. We employed multiple scanning probe techniques combined with symmetr…
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Local-probe imaging of the ferroelectric domain structure and auxiliary bulk pyroelectric measurements were conducted at low temperatures with the aim to clarify the essential aspects of the orbitally driven phase transition in GaMo4S8, a lacunar spinel crystal that can be viewed as a spin-hole analogue of its GaV4S8 counterpart. We employed multiple scanning probe techniques combined with symmetry and mechanical compatibility analysis to uncover the hierarchical domain structures, develo** on the 10-100 nm scale. The identified domain architecture involves a plethora of ferroelectric domain boundaries and junctions, including primary and secondary domain walls in both electrically neutral and charged configurations, and topological line defects transforming neutral secondary walls into two oppositely charged ones.
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Submitted 11 January, 2021;
originally announced January 2021.
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Anisotropic fractal magnetic domain pattern in bulk Mn$_{1.4}$PtSn
Authors:
A. S. Sukhanov,
B. E. Zuniga Cespedes,
P. Vir,
A. S. Cameron,
A. Heinemann,
N. Martin,
G. Chaboussant,
V. Kumar,
P. Milde,
L. M. Eng,
C. Felser,
D. S. Inosov
Abstract:
The tetragonal compound Mn$_{1.4}$PtSn with the $D_{2d}$ symmetry recently attracted attention as the first known material that hosts magnetic antiskyrmions, which differ from the so far known skyrmions by their internal structure. The latter have been found in a number of magnets with the chiral crystal structure. In previous works, the existence of antiskyrmions in Mn$_{1.4}$PtSn was unambiguous…
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The tetragonal compound Mn$_{1.4}$PtSn with the $D_{2d}$ symmetry recently attracted attention as the first known material that hosts magnetic antiskyrmions, which differ from the so far known skyrmions by their internal structure. The latter have been found in a number of magnets with the chiral crystal structure. In previous works, the existence of antiskyrmions in Mn$_{1.4}$PtSn was unambiguously demonstrated in real space by means of Lorentz transmission electron microscopy on thin-plate samples ($\sim$100~nm thick). In the present study, we used small-angle neutron scattering and magnetic force microscopy to perform reciprocal- and real-space imaging of the magnetic texture of bulk Mn$_{1.4}$PtSn single-crystals at different temperatures and in applied magnetic field. We found that the magnetic texture in the bulk differs significantly from that of thin-plate samples. Instead of spin helices or an antiskyrmion lattice, we observe an anisotropic fractal magnetic pattern of closure domains in zero field above the spin-reorientation transition temperature, which transforms into a set of bubble domains in high field. Below the spin-reorientation transition temperature the strong in-plane anisotropy as well as the fractal self-affinity in zero field is gradually lost, while the formation of bubble domains in high field remains robust. The results of our study highlight the importance of dipole-dipole interactions in thin-plate samples for the stabilization of antiskyrmions and identify criteria which should guide the search for potential (anti)skyrmion host materials. Moreover, they provide consistent interpretations of the previously reported magnetotransport anomalies of the bulk crystals.
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Submitted 15 July, 2020;
originally announced July 2020.
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Nanoscale-confined Terahertz Polaritons in a van der Waals Crystal
Authors:
Thales V. A. G. de Oliveira,
Tobias Nörenberg,
Gonzalo Álvarez-Pérez,
Lukas Wehmeier,
Javier Taboada-Gutiérrez,
Maximilian Obst,
Franz Hempel,
Eduardo J. H. Lee,
John M. Klopf,
Ion Errea,
Alexey Y. Nikitin,
Susanne C. Kehr,
Pablo Alonso-Gonzaléz,
Lukas M. Eng
Abstract:
Electromagnetic field confinement is crucial for nanophotonic technologies, since it allows for enhancing light-matter interactions, thus enabling light manipulation in deep sub-wavelength scales. In the terahertz (THz) spectral range, radiation confinement is conventionally achieved with specially designed metallic structures - such as antennas or nanoslits - with large footprints due to the rath…
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Electromagnetic field confinement is crucial for nanophotonic technologies, since it allows for enhancing light-matter interactions, thus enabling light manipulation in deep sub-wavelength scales. In the terahertz (THz) spectral range, radiation confinement is conventionally achieved with specially designed metallic structures - such as antennas or nanoslits - with large footprints due to the rather long wavelengths of THz radiation. In this context, phonon polaritons - light coupled to lattice vibrations - in van der Waals (vdW) crystals have emerged as a promising solution for controlling light beyond the diffraction limit, as they feature extreme field confinements and low optical losses. However, experimental demonstration of nanoscale-confined phonon polaritons at THz frequencies has so far remained elusive. Here, we provide it by employing scattering-type scanning near-field optical microscopy (s-SNOM) combined with a free-electron laser (FEL) to reveal a range of low-loss polaritonic excitations at frequencies from 8 to 12 THz in the vdW semiconductor $α-MoO_3$. We visualize THz polaritons with i) in-plane hyperbolic dispersion, ii) extreme nanoscale field confinement (below $λ_o/75$) and iii) long polariton lifetimes, with a lower limit of > 2 ps.
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Submitted 11 November, 2020; v1 submitted 13 July, 2020;
originally announced July 2020.
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Terahertz signatures of ultrafast Dirac fermion relaxation at the surface of topological insulators at room temperature
Authors:
S. Kovalev,
K. -J. Tielrooij,
J. -C. Deinert,
I. Ilyakov,
N. Awari,
M. Chen,
A. Ponomaryov,
M. Bawatna,
T. V. A. G. de Oliveira,
L. M. Eng,
K. A. Kuznetsov,
G. Kh. Kitaeva,
P. I. Kuznetsov,
H. A. Hafez,
D. Turchinovich,
M. Gensch
Abstract:
Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of…
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Topologically-protected surface states present rich physics and promising spintronic, optoelectronic and photonic applications that require a proper understanding of their ultrafast carrier dynamics. Here, we investigate these dynamics in topological insulators (TIs) of the bismuth and antimony chalcogenide family, where we isolate the response of Dirac fermions at the surface from the response of bulk carriers by combining photoexcitation with below-bandgap terahertz (THz) photons with TI samples with varying Fermi level, including one sample with the Fermi level located within the bandgap. We identify distinctly faster relaxation of charge carriers in the topologically-protected Dirac surface states (few hundred femtoseconds), compared to bulk carriers (few picoseconds). In agreement with such fast cooling dynamics, we observe THz harmonic generation without any saturation effects for increasing incident fields, unlike graphene which exhibits strong saturation. This opens up promising avenues for increased THz nonlinear conversion efficiencies, and high-bandwidth optoelectronic and spintronic information and communication applications.
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Submitted 1 March, 2021; v1 submitted 6 June, 2020;
originally announced June 2020.
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Correlating the nanoscale structural, magnetic and magneto-transport properties in SrRuO3-based perovskite oxide ultra-thin films
Authors:
Gerald Malsch,
Dmytro Ivaneyko,
Peter Milde,
Lena Wysocki,
Lin Yang,
Paul H. M. van Loosdrecht,
Ionela Lindfors-Vrejoiu,
Lukas M. Eng
Abstract:
We investigated the structural and magnetic properties of bare SrRuO$_3$ (SRO) ultra-thin films and SrRuO$_3$/SrIrO$_3$/SrZrO$_3$ (SRO/SIO/SZO: RIZ) trilayer heterostructures between 10 K and 80 K, by comparing macroscopic data using magneto-optical Kerr effect (MOKE) and magneto-transport (anomalous Hall effect: AHE), with nanoscale fingerprints when applying non-contact scanning force microscopy…
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We investigated the structural and magnetic properties of bare SrRuO$_3$ (SRO) ultra-thin films and SrRuO$_3$/SrIrO$_3$/SrZrO$_3$ (SRO/SIO/SZO: RIZ) trilayer heterostructures between 10 K and 80 K, by comparing macroscopic data using magneto-optical Kerr effect (MOKE) and magneto-transport (anomalous Hall effect: AHE), with nanoscale fingerprints when applying non-contact scanning force microscopy (nc-SFM) and magnetic force microscopy (MFM). SRO and RIZ ultra-thin films were epitaxially grown at 650C onto vicinal SrTiO$_3$ (100) single-crystalline substrates to a nominal thickness of 4 and 4/2/2 unit cells (uc), respectively. Our correlated analysis allows associating topographic sample features of overgrown individual layers to their residual magnetization, as is shown here to be relevant for interpreting the macroscopic AHE data. Although the hump-like features in the AHE suggest a magnetically extured skyrmion phase to exist around 55 K associated to the topological Hall effect (THE), both our MOKE and MFM data cannot support this theory. In contrast, our SFM/MFM local-scale analysis finds the local coercive field to be strongly dependent on the effective layer thickness and stoichiometry in both the SRO and RIZ samples, with huge impact on the local band-structure. In fact, it is these variations that in turn mimic a potential THE through anomalies in the AHE resistivity loops.
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Submitted 3 October, 2019;
originally announced October 2019.
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Measurement of Surface Acoustic Wave Resonances in Ferroelectric Domains by Microwave Microscopy
Authors:
Scott R. Johnston,
Yongliang Yang,
Yong-Tao Cui,
Eric Yue Ma,
Thomas Kämpfe,
Lukas M. Eng,
Jian Zhou,
Yan-Feng Chen,
Minghui Lu,
Zhi-Xun Shen
Abstract:
Surface Acoustic Wave (SAW) resonances were imaged within a closed domain in the ferroelectric LiTaO$_3$ via scanning Microwave Impedance Microscopy (MIM). The MIM probe is used for both SAW generation and measurement, allowing contact-less measurement within a mesoscopic structure. Measurements taken over a range of microwave frequencies are consistent with a constant acoustic velocity, demonstra…
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Surface Acoustic Wave (SAW) resonances were imaged within a closed domain in the ferroelectric LiTaO$_3$ via scanning Microwave Impedance Microscopy (MIM). The MIM probe is used for both SAW generation and measurement, allowing contact-less measurement within a mesoscopic structure. Measurements taken over a range of microwave frequencies are consistent with a constant acoustic velocity, demonstrating the acoustic nature of the measurement.
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Submitted 1 May, 2017;
originally announced May 2017.
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Characteristics of ferroelectric-ferroelastic domains in N{é}el-type skyrmion host GaV$_4$S$_8$
Authors:
Ádám Butykai,
Sándor Bordács,
István Kézsmárki,
Vladimir Tsurkan,
Alois Loidl,
Jonathan Döring,
Peter Milde,
Susanne C. Kehr,
Lukas M. Eng
Abstract:
GaV$_4$S$_8$ is a multiferroic semiconductor hosting N{é}el-type magnetic skyrmions dressed with electric polarization. At T$_s$ = 42K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below T$_s$, ferroelectric domains are formed with the electric polarizat…
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GaV$_4$S$_8$ is a multiferroic semiconductor hosting N{é}el-type magnetic skyrmions dressed with electric polarization. At T$_s$ = 42K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below T$_s$, ferroelectric domains are formed with the electric polarization pointing along any of the four $\left< 111 \right>$ axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the N{é}el-type skyrmion lattice emerging below T$_C$=13\:K, the characteristics of polar domains in GaV$_4$S$_8$ have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV$_4$S$_8$ using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm-1.2 $μ$m. We expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manupulation of N{é}el-type skyrmions.
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Submitted 22 February, 2017;
originally announced February 2017.
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Multidomain Skyrmion Lattice State in Cu$_2$OSeO$_3$
Authors:
S. L. Zhang,
A. Bauer,
D. M. Burn,
P. Milde,
E. Neuber,
L. M. Eng,
H. Berger,
C. Pfleiderer,
G. van der Laan,
T. Hesjedal
Abstract:
Magnetic skyrmions in chiral magnets are nanoscale, topologically-protected magnetization swirls that are promising candidates for spintronics memory carriers. Therefore, observing and manipulating the skyrmion state on the surface level of the materials are of great importance for future applications. Here, we report a controlled way of creating a multidomain skyrmion state near the surface of a…
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Magnetic skyrmions in chiral magnets are nanoscale, topologically-protected magnetization swirls that are promising candidates for spintronics memory carriers. Therefore, observing and manipulating the skyrmion state on the surface level of the materials are of great importance for future applications. Here, we report a controlled way of creating a multidomain skyrmion state near the surface of a Cu$_{2}$OSeO$_{3}$ single crystal, observed by soft resonant elastic x-ray scattering. This technique is an ideal tool to probe the magnetic order at the $L_{3}$ edge of $3d$ metal compounds giving a depth sensitivity of ${\sim}50$ nm. The single-domain sixfold-symmetric skyrmion lattice can be broken up into domains overcoming the propagation directions imposed by the cubic anisotropy by applying the magnetic field in directions deviating from the major cubic axes. Our findings open the door to a new way to manipulate and engineer the skyrmion state locally on the surface, or on the level of individual skyrmions, which will enable applications in the future.
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Submitted 3 June, 2016;
originally announced June 2016.
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Optical nanoscopy of transient states in condensed matter
Authors:
Frederik Kuschewski,
Susanne C. Kehr,
Bert Green,
Christian Bauer,
Michael Gensch,
Lukas M. Eng
Abstract:
Recently, the fundamental and nanoscale understanding of complex phenomena in materials research and the life sciences, witnessed considerable progress. However, elucidating the underlying mechanisms, governed by entangled degrees of freedom such as lattice, spin, orbit, and charge for solids or conformation, electric potentials, and ligands for proteins, has remained challenging. Techniques that…
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Recently, the fundamental and nanoscale understanding of complex phenomena in materials research and the life sciences, witnessed considerable progress. However, elucidating the underlying mechanisms, governed by entangled degrees of freedom such as lattice, spin, orbit, and charge for solids or conformation, electric potentials, and ligands for proteins, has remained challenging. Techniques that allow for distinguishing between different contributions to these processes are hence urgently required. In this paper we demonstrate the application of scattering-type scanning near-field optical microscopy (s-SNOM) as a novel type of nano-probe for tracking transient states of matter. We introduce a sideband-demodulation technique that allows for probing exclusively the stimuli-induced change of near-field optical properties. We exemplify this development by inspecting the decay of an electron-hole plasma generated in SiGe thin films through near-infrared laser pulses. Our approach can universally be applied to optically track ultrafast/-slow processes over the whole spectral range from UV to THz frequencies.
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Submitted 3 August, 2015;
originally announced August 2015.
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Néel-type Skyrmion Lattice with Confined Orientation in the Polar Magnetic Semiconductor GaV$_4$S$_8$
Authors:
I. Kézsmárki,
S. Bordács,
P. Milde,
E. Neuber,
L. M. Eng,
J. S. White,
H. M. Rønnow,
C. D. Dewhurst,
M. Mochizuki,
K. Yanai,
H. Nakamura,
D. Ehlers,
V. Tsurkan,
A. Loidl
Abstract:
Following the early prediction of the skyrmion lattice (SkL) - a periodic array of spin vortices - it has been observed recently in various magnetic crystals mostly with chiral structure. Although non-chiral but polar crystals with C$_{nv}$ symmetry were identifed as ideal SkL hosts in pioneering theoretical studies this archetype of SkL has remained experimentally unexplored. Here, we report the…
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Following the early prediction of the skyrmion lattice (SkL) - a periodic array of spin vortices - it has been observed recently in various magnetic crystals mostly with chiral structure. Although non-chiral but polar crystals with C$_{nv}$ symmetry were identifed as ideal SkL hosts in pioneering theoretical studies this archetype of SkL has remained experimentally unexplored. Here, we report the discovery of a SkL in the polar magnetic semiconductor GaV$_4$S$_8$ with rhombohedral (C$_{3v}$) symmetry and easy axis anisotropy. The SkL exists over an unusually broad temperature range compared with other bulk crystals and the orientation of the vortices is not controlled by the external magnetic feld but instead confned to the magnetic easy axis. Supporting theory attributes these unique features to a new non-chiral or Néel-type of SkL describable as a superposition of spin cycloids in contrast to the Bloch-type SkL in chiral magnets described in terms of spin helices.
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Submitted 27 February, 2015;
originally announced February 2015.
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Conductivity and magnetoresistance of La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films under photoexcitation
Authors:
Andreas Thiessen,
Elke Beyreuther,
Robert Werner,
Reinhold Kleiner,
Dieter Koelle,
Lukas M. Eng
Abstract:
La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$-phase segregation and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, were comparatively investigated with respect to both their spectral and temperature-dependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optic…
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La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$-phase segregation and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, were comparatively investigated with respect to both their spectral and temperature-dependent photoconductivity (PC) and their magnetoresistance (MR) behaviour under photoexcitation. While as-grown films were insensitive to optical excitation, oxygen reduction appeared to be an effective way to decrease the film resistance, but the film thickness was found to play a minor role. However, from the evaluation of the spectral behaviour of the PC and the comparison of the MR of the LCeMO/substrate-samples with a bare substrate under illumination we find that the photoconductivity data reflects not only contributions from (i) photogenerated charge carriers in the film and (ii) carriers injected from the photoconductive substrate (as concluded from earlier works), but also (iii) a decisive parallel photoconduction in the SrTiO$_3$ substrate. Furthermore -- also by analyzing the MR characteristics -- the unexpected occurence of a strong electroresistive effect in the sample with the highest degree of CeO$_2$ segregation and oxygen deficiency could be attributed to the electroresistance of the SrTiO$_3$ substrate as well. The results suggest a critical reconsideration and possibly a reinterpretation of several previous photoconductivity and electroresistance investigations of manganite thin films on SrTiO$_3$.
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Submitted 21 August, 2014;
originally announced August 2014.
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Electrical-transport characteristics of as-grown and oxygen-reduced La$_{0.7}$Ce$_{0.3}$MnO$_3$ films: calculation of hop** energies, Mn valences, and carrier localization lengths
Authors:
Andreas Thiessen,
Elke Beyreuther,
Robert Werner,
Reinhold Kleiner,
Dieter Koelle,
Lukas M. Eng
Abstract:
Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$ phase segregation, and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, are compared with respect to their resistance-vs.-temperature (…
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Presently, cerium-doped LaMnO$_3$ is vividly discussed as an electron-doped counterpart prototype to the well-established hole-doped mixed-valence manganites. Here, La$_{0.7}$Ce$_{0.3}$MnO$_3$ thin films of different thicknesses, degrees of CeO$_2$ phase segregation, and oxygen deficiency, grown on SrTiO$_3$ single crystal substrates, are compared with respect to their resistance-vs.-temperature (R vs. T) behavior from 300~K down to 90~K. While the variation of the film thickness (and thus the degree of epitaxial strain) in the range between 10~nm and 100~nm has only a weak impact on the electrical transport, the degree of oxygen deficiency as well as the existence of CeO$_2$ clusters can completely change the type of hop** mechanism. This is shown by fitting the respective \textit{R-T} curves with three different transport models (adiabatic polaron hop**, Mott variable-range hop**, Efros-Shklovskii variable-range hop**), which are commonly used for the mixed-valence manganites. Several characteristic transport parameters, such as the hop** energies, the carrier localization lengths, as well as the Mn valences are derived from the fitting procedures.
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Submitted 23 August, 2014; v1 submitted 20 August, 2014;
originally announced August 2014.
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Conducting and insulating LaAlO$_3$/SrTiO$_3$ interfaces: A comparative surface photovoltage investigation
Authors:
Elke Beyreuther,
Domenico Paparo,
Andreas Thiessen,
Stefan Grafström,
Lukas M. Eng
Abstract:
Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO$_3$ films grown either on TiO$_2$- or on SrO-terminated SrTiO$_3$. As shown in a number of experim…
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Surface photovoltage (SPV) spectroscopy, which is a versatile method to analyze the energetic distribution of electronic defect states at surfaces and interfaces of wide-bandgap semiconductor (hetero-)structures, is applied to comparatively investigate heterostructures made of 5-unit-cell-thick LaAlO$_3$ films grown either on TiO$_2$- or on SrO-terminated SrTiO$_3$. As shown in a number of experimental and theoretical investigations in the past, these two interfaces exhibit dramatically different properties with the first being conducting and the second insulating.
Our present SPV investigation reveals clearly distinguishable interface defect state distributions for both configurations when interpreted within the framework of a classical semiconductor band scheme. Furthermore, bare SrTiO$_3$ crystals with TiO$_2$ or mixed SrO/TiO$_2$ terminations show similar SPV spectra and transients as do LaAlO$_3$-covered samples with the respective termination of the SrTiO$_3$ substrate. This is in accordance with a number of recent works that stress the decisive role of SrTiO$_3$ and the minor role of LaAlO$_3$ with respect to the electronic interface properties.
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Submitted 3 November, 2013;
originally announced November 2013.
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Mn$^{2+}$/Mn$^{3+}$ state of La$_{0.7}$Ce$_{0.3}$MnO$_3$ by oxygen reduction and photodo**
Authors:
Andreas Thiessen,
Elke Beyreuther,
Stefan Grafström,
Kathrin Dörr,
Robert Werner,
Reinhold Kleiner,
Dieter Koelle,
Lukas M. Eng
Abstract:
Films of cerium-doped LaMnO$_3$, which has been intensively discussed as an electron-doped counterpart to hole-doped mixed-valence lanthanum manganites during the past decade, were analyzed by x-ray photoemission spectroscopy with respect to their manganese valence under photoexcitation. The comparative analysis of the Mn 3s exchange splitting of La$_{0.7}$Ce$_{0.3}$MnO$_3$ (LCeMO) films in the da…
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Films of cerium-doped LaMnO$_3$, which has been intensively discussed as an electron-doped counterpart to hole-doped mixed-valence lanthanum manganites during the past decade, were analyzed by x-ray photoemission spectroscopy with respect to their manganese valence under photoexcitation. The comparative analysis of the Mn 3s exchange splitting of La$_{0.7}$Ce$_{0.3}$MnO$_3$ (LCeMO) films in the dark and under illumination clearly shows that both oxygen reduction and illumination are able to decrease the Mn valence towards a mixed 2$+$/3$+$ state, independently of the film thickness and the degree of CeO$_2$ segregation. Charge injection from the photoconductive SrTiO$_3$ substrate into the Mn e$_g$ band with carrier lifetimes in the range of tens of seconds and intrinsic generation of electron-hole pairs within the films are discussed as two possible sources of the Mn valence shift and the subsequent electron do**.
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Submitted 6 December, 2013; v1 submitted 18 October, 2013;
originally announced October 2013.
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Transport and noise in organic field effect devices
Authors:
K. Morawetz S. Gemming,
R. Luschtinetz,
T. Kunze,
P. Lipavský,
L. M. Eng,
G. Seifert,
V. Pankoke,
P. Milde
Abstract:
The transport and fluctuation properties of organic molecules ordered parallel between two Au contact leads are investigated by the method of surface Green function. From first-principles simulation the relevant hop** parameters are extracted and used to calculate nonlinear transport coefficients with respect to an external bias voltage. A staggering of conductance is found in dependence on th…
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The transport and fluctuation properties of organic molecules ordered parallel between two Au contact leads are investigated by the method of surface Green function. From first-principles simulation the relevant hop** parameters are extracted and used to calculate nonlinear transport coefficients with respect to an external bias voltage. A staggering of conductance is found in dependence on the number of molecules squeezed in between the contacts. The thermal properties show an anomalous behavior whenever the voltage reaches the values of the molecular energy levels active for transport. The thermoelectric figure of merit shows a resonance allowing to reach values even larger than one.
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Submitted 19 December, 2008; v1 submitted 2 October, 2008;
originally announced October 2008.
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Current without bias and diode effect in shuttling transport of nanoshafts
Authors:
K. Morawetz,
S. Gemming,
R. Luschtinetz,
L. M. Eng,
G. Seifert,
A. Kenfack
Abstract:
A row of parallely ordered and coupled molecular nanoshafts is shown to develop a shuttling transport of charges at finite temperature. The appearance of a cu rrent without applying an external bias voltage is reported as well as a natura l diode effect allowing unidirectional charge transport along one field directi on while blocking the opposite direction. The zero-bias voltage current appears…
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A row of parallely ordered and coupled molecular nanoshafts is shown to develop a shuttling transport of charges at finite temperature. The appearance of a cu rrent without applying an external bias voltage is reported as well as a natura l diode effect allowing unidirectional charge transport along one field directi on while blocking the opposite direction. The zero-bias voltage current appears above a threshold of initial thermal and/or dislocation energy.
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Submitted 28 April, 2008;
originally announced April 2008.