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Cerium Oxide-based Solid-State Thermal Transistors with Wide Switching Width of 9.5 W/mK
Authors:
Ahrong Jeong,
Mitsuki Yoshimura,
Zhi** Bian,
Jason Tam,
Bin Feng,
Yuichi Ikuhara,
Yusaku Magari,
Takashi Endo,
Yasutaka Matsuo,
Hiromichi Ohta
Abstract:
Thermal transistors that electrically switch heat flow on and off have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}) of active metal oxide layers. The \k{appa}-switching width (difference between on-state and off-state \k{appa}) of the previously proposed electrochemical thermal transistors is narrow, less than 5…
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Thermal transistors that electrically switch heat flow on and off have attracted attention as thermal management devices. Electrochemical reduction/oxidation switches the thermal conductivity (\k{appa}) of active metal oxide layers. The \k{appa}-switching width (difference between on-state and off-state \k{appa}) of the previously proposed electrochemical thermal transistors is narrow, less than 5 W/mK. Here, we show solid-state electrochemical thermal transistors with a wide \k{appa}-switching width of 9.5 W/mK. We used CeO2 thin film as the active layer directly deposited on a solid electrolyte YSZ substrate. A Pt thin film was deposited on the surface of the CeO2 thin film and the back surface of the YSZ substrate to create a solid-state electrochemical thermal transistor. When the CeO2 thin film was once reduced (off-state) and then oxidized (on-state), the \k{appa} was approximately 2.5 W/mK in its most reduced state, and \k{appa} increased with oxidation to 11.8 W/mK (on-state). This reduction (off-state)/oxidation (on-state) cycle was repeated five times and the average value of \k{appa} was 2.5 W/mK after reduction (off-state) and 12 W/mK after oxidation (on-state). The \k{appa}-switching width was 9.5 W/mK. The CeO2-based solid-state electrochemical thermal transistors are potential materials for thermal shutters and thermal displays.
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Submitted 30 April, 2024;
originally announced April 2024.
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Solid-State Electrochemical Thermal Transistors with Large Thermal Conductivity Switching Widths
Authors:
Zhi** Bian,
Mitsuki Yoshimura,
Ahrong Jeong,
Haobo Li,
Takashi Endo,
Yasutaka Matsuo,
Yusaku Magari,
Hidekazu Tanaka,
Hiromichi Ohta
Abstract:
Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching.…
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Thermal transistors that switch the thermal conductivity (\k{appa}) of the active layers are attracting increasing attention as thermal management devices. For electrochemical thermal transistors, several transition metal oxides (TMOs) have been proposed as active layers. After electrochemical redox treatment, the crystal structure of the TMO is modulated, which results in the \k{appa} switching. However, the \k{appa} switching width is still small (< 4 W/mK). In this study, we demonstrate that LaNiOx-based solid-state electrochemical thermal transistors have a \k{appa} switching width of 4.3 W/mK. Fully oxidised LaNiO3 (on state) has a \k{appa} of 6.0 W/mK due to the large contribution of electron thermal conductivity (\k{appa}ele, 3.1 W/mK). In contrast, reduced LaNiO2.72 (off state) has a \k{appa} of 1.7 W/mK because the phonons are scattered by the oxygen vacancies. The LaNiOx-based electrochemical thermal transistor exhibits excellent cyclability of \k{appa} and the crystalline lattice of LaNiOx. This electrochemical thermal transistor may be a promising platform for next-generation devices such as thermal displays.
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Submitted 12 April, 2024;
originally announced April 2024.
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Reliable operation in high-mobility indium oxide thin film transistors
Authors:
Prashant R. Ghediya,
Yusaku Magari,
Hikaru Sadahira,
Takashi Endo,
Mamoru Furuta,
Yuqiao Zhang,
Yasutaka Matsuo,
Hiromichi Ohta
Abstract:
Transparent oxide semiconductors (TOSs) based thin-film transistors (TFTs) that exhibit higher field effect mobility (uFE) are highly required toward the realization of next-generation displays. Among numerous types of TOS-TFTs, In2O3-based TFTs are the front-running candidate because they exhibit the highest uFE ~100 cm2/Vs. However, the device operation of In2O3 TFTs is unreliable; a large volta…
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Transparent oxide semiconductors (TOSs) based thin-film transistors (TFTs) that exhibit higher field effect mobility (uFE) are highly required toward the realization of next-generation displays. Among numerous types of TOS-TFTs, In2O3-based TFTs are the front-running candidate because they exhibit the highest uFE ~100 cm2/Vs. However, the device operation of In2O3 TFTs is unreliable; a large voltage shift occurs especially when negative gate bias is applied due to adsorption/desorption of gas molecules. Although passivation of the TFTs is used to overcome such instability, previously proposed passivation materials did not improve the reliability. Here, we show that the In2O3 TFTs passivated with Y2O3 and Er2O3 films are highly reliable and do not show threshold voltage shifts when applying gate bias. We applied positive and negative gate bias to the In2O3 TFTs passivated with various insulating oxides and found that only the In2O3 TFTs passivated with Y2O3 and Er2O3 films did not exhibit threshold voltage shifts. We observed that only the Y2O3 grew heteroepitaxially on the In2O3 crystal. This would be the origin of the high reliability of the In2O3 TFTs passivated with Y2O3 and Er2O3 films. This finding accelerates the development of next-generation displays using high-mobility In2O3 TFTs.
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Submitted 4 April, 2024;
originally announced April 2024.
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Electrical transport properties of atomically thin WSe2 using perpendicular magnetic anisotropy metal contacts
Authors:
S. Gupta,
R. Ohshima,
Y. Ando,
T. Endo,
Y. Miyata,
M. Shiraishi
Abstract:
Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer…
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Tungsten diselenide, WSe2 shows excellent properties and become very promising material among two dimensional semiconductors. Wide band gap and large spin-orbit coupling along with naturally lacking inversion symmetry in the monolayer WSe2 make it efficient material for spintronics, optoelectronics and valleytronics applications. In this work, we report electrical transport properties of monolayer WSe2 based field effect transistor with most needed multilayer Co/Pt ferromagnetic electrodes exhibiting perpendicular magnetic anisotropy. We studied contacts behaviour by performing I-V curve measurements and estimating Schottky barrier heights (SBHs). SBHs estimated from experimental data are found to be comparatively small, without using any tunnel barrier. This work expands the current understanding of WSe2 based devices and gives insight into the electrical behaviour of Co/Pt metal contacts, which can open great possibilities for spintronic/valleytronic applications.
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Submitted 13 October, 2023;
originally announced October 2023.
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Functional Equations Solving Initial-Value Problems of Complex Burgers-Type Equations for One-Dimensional Log-Gases
Authors:
Taiki Endo,
Makoto Katori,
Noriyoshi Sakuma
Abstract:
We study the hydrodynamic limits of three kinds of one-dimensional stochastic log-gases known as Dyson's Brownian motion model, its chiral version, and the Bru-Wishart process studied in dynamical random matrix theory. We define the measure-valued processes so that their Cauchy transforms solve the complex Burgers-type equations. We show that applications of the method of characteristic curves to…
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We study the hydrodynamic limits of three kinds of one-dimensional stochastic log-gases known as Dyson's Brownian motion model, its chiral version, and the Bru-Wishart process studied in dynamical random matrix theory. We define the measure-valued processes so that their Cauchy transforms solve the complex Burgers-type equations. We show that applications of the method of characteristic curves to these partial differential equations provide the functional equations relating the Cauchy transforms of measures at an arbitrary time with those at the initial time. We transform the functional equations for the Cauchy transforms to those for the $R$-transforms and the $S$-transforms of the measures, which play central roles in free probability theory. The obtained functional equations for the $R$-transforms and the $S$-transforms are simpler than those for the Cauchy transforms and useful for explicit calculations including the computation of free cumulant sequences. Some of the results are argued using the notion of free convolutions.
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Submitted 2 July, 2022; v1 submitted 1 June, 2021;
originally announced June 2021.
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Dynamical symmetry of strongly light-driven electronic system in crystalline solids
Authors:
Kohei Nagai,
Kento Uchida,
Naotaka Yoshikawa,
Takahiko Endo,
Yasumitsu Miyata,
Koichiro Tanaka
Abstract:
The Floquet state, which is a periodically and intensely light driven quantum state in solids, has been attracting attention as a novel state that is coherently controllable on an ultrafast time scale. An important issue has been to demonstrate experimentally novel electronic properties in the Floquet state. One technique to demonstrate them is the light scattering spectroscopy, which offers an im…
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The Floquet state, which is a periodically and intensely light driven quantum state in solids, has been attracting attention as a novel state that is coherently controllable on an ultrafast time scale. An important issue has been to demonstrate experimentally novel electronic properties in the Floquet state. One technique to demonstrate them is the light scattering spectroscopy, which offers an important clue to clarifying the symmetries and energy structures of the states through symmetry analysis of the polarization selection rules. Here, we determine circular and linear polarization selection rules of light scattering in a mid-infrared-driven Floquet system in monolayer MoS2 and provide a comprehensive understanding in terms of the "dynamical symmetry" of the Floquet state.
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Submitted 16 March, 2020;
originally announced March 2020.
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Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Authors:
Sachin Gupta,
F. Rortais,
R. Ohshima,
Y. Ando,
T. Endo,
Y. Miyata,
M. Shiraishi
Abstract:
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 chan…
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Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS2 interface still remains an open issue. Here, we report electronic properties of field effect transistor devices using monolayer MoS2 channels and permalloy (Py) as ferromagnetic (FM) metal contacts. Monolayer MoS2 channels were directly grown on SiO2/Si substrate via chemical vapor deposition technique. The increase in current with back gate voltage shows the tunability of FET characteristics. The Schottky barrier height (SBH) estimated for Py/MoS2 contacts is found to be +28.8 meV (zero-bias), which is the smallest value reported so-far for any direct metal (magnetic or non-magnetic)/monolayer MoS2 contact. With the application of gate voltage (+10 V), SBH shows a drastic reduction down to a value of -6.8 meV. The negative SBH reveals ohmic behavior of Py/MoS2 contacts. Low SBH with controlled ohmic nature of FM contacts is a primary requirement for MoS2 based spintronics and therefore using directly grown MoS2 channels in the present study can pave a path towards high performance devices for large scale applications.
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Submitted 12 September, 2019;
originally announced September 2019.
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Three-Parametric Marcenko-Pastur Density
Authors:
Taiki Endo,
Makoto Katori
Abstract:
The complex Wishart ensemble is the statistical ensemble of $M \times N$ complex random matrices with $M \geq N$ such that the real and imaginary parts of each element are given by independent standard normal variables. The Marcenko--Pastur (MP) density $ρ(x; r), x \geq 0$ describes the distribution for squares of the singular values of the random matrices in this ensemble in the scaling limit…
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The complex Wishart ensemble is the statistical ensemble of $M \times N$ complex random matrices with $M \geq N$ such that the real and imaginary parts of each element are given by independent standard normal variables. The Marcenko--Pastur (MP) density $ρ(x; r), x \geq 0$ describes the distribution for squares of the singular values of the random matrices in this ensemble in the scaling limit $N \to \infty$, $M \to \infty$ with a fixed rectangularity $r=N/M \in (0, 1]$. The dynamical extension of the squared-singular-value distribution is realized by the noncolliding squared Bessel process, and its hydrodynamic limit provides the two-parametric MP density $ρ(x; r, t)$ with time $t \geq 0$, whose initial distribution is $δ(x)$. Recently, Blaizot, Nowak, and Warchol studied the time-dependent complex Wishart ensemble with an external source and introduced the three-parametric MP density $ρ(x; r, t, a)$ by analyzing the hydrodynamic limit of the process starting from $δ(x-a), a > 0$. In the present paper, we give useful expressions for $ρ(x; r, t, a)$ and perform a systematic study of dynamic critical phenomena observed at the critical time $t_{\rm c}(a)=a$ when $r=1$. The universal behavior in the long-term limit $t \to \infty$ is also reported. It is expected that the present system having the three-parametric MP density provides a mean-field model for QCD showing spontaneous chiral symmetry breaking.
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Submitted 8 January, 2020; v1 submitted 17 July, 2019;
originally announced July 2019.
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Indirect bandgap of hBN-encapsulated monolayer MoS2
Authors:
Yosuke Uchiyama,
Kenji Watanabe,
Takashi Taniguchi,
Kana Kojima,
Takahiko Endo,
Yasumitsu Miyata,
Hisanori Shinohara,
Ryo Kitaura
Abstract:
We present measurements of temperature dependence of photoluminescence intensity from monolayer MoS2 encapsulated by hexagonal boron nitride (hBN) flakes. The obtained temperature dependence shows an opposite trend to that of previously observed in a monolayer MoS2 on a SiO2 substrate. Ab-initio bandstructure calculations have revealed that monolayer MoS2 encapsulated by hBN flakes have no longer…
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We present measurements of temperature dependence of photoluminescence intensity from monolayer MoS2 encapsulated by hexagonal boron nitride (hBN) flakes. The obtained temperature dependence shows an opposite trend to that of previously observed in a monolayer MoS2 on a SiO2 substrate. Ab-initio bandstructure calculations have revealed that monolayer MoS2 encapsulated by hBN flakes have no longer a direct-gap semiconductor but an indirect-gap semiconductor. This is caused by orbital hybridization between MoS2 and hBN, which leads to upward shift of gamma-valley of MoS2. This work shows an important implication that the hBN-encapsulated structures used to address intrinsic properties of two-dimensional crystals can alter basic properties encapsulated materials.
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Submitted 26 March, 2019; v1 submitted 15 March, 2019;
originally announced March 2019.
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Choice of Paper for Multigraphene Growth on Lead Pencil Drawing
Authors:
Satoru Kaneko,
Yu Motoizumi,
Kazuo Satoh,
Yoshitada Shimizu,
Manabu Yasui,
Takeshi Rachi,
Chihiro Kato,
Satomi Tanaka,
Mikio Ushiyama,
Seiji Konuma,
Yuko Itou,
Tamio Endo,
Akifumi Matsuda,
Mamoru Yoshimoto
Abstract:
Graphene is prepared with a variety of methods, such as thermal decomposition of SiC, Chemical Vapor Deposition and pulsed laser deposition. We propose another method to prepare graphitic carbon by irradiating lead pencil drawn paper using femtosecond laser [Jpn. J. Appl. Phys. 55 (2016) 01AE24]. In order to evaluate electronic properties, such as resistivity and mobility, surface roughness of pap…
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Graphene is prepared with a variety of methods, such as thermal decomposition of SiC, Chemical Vapor Deposition and pulsed laser deposition. We propose another method to prepare graphitic carbon by irradiating lead pencil drawn paper using femtosecond laser [Jpn. J. Appl. Phys. 55 (2016) 01AE24]. In order to evaluate electronic properties, such as resistivity and mobility, surface roughness of paper is important to evaluate thickness of lead pencil as one of principal factors. The surface roughness of variety of paper was investigated including cross section of drawing paper. Femotosecond laser irradiated the sample surface with its focus shifted from the optical focal point to enlarge the laser spot and tender irradiation.
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Submitted 6 April, 2016;
originally announced April 2016.
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Relation between two-phase quantum walks and the topological invariant
Authors:
Takako Endo,
Norio Konno,
Hideaki Obuse
Abstract:
We study a position-dependent discrete-time quantum walk (QW) in one dimension, whose time-evolution operator is built up from two coin operators which are distinguished by phase factors from $x\geq0$ and $x\leq-1$. We call the QW the {\it complete two-phase QW} to discern from the two-phase QW with one defect\cite{endosan,maman}. Because of its localization properties, the two-phase QWs can be co…
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We study a position-dependent discrete-time quantum walk (QW) in one dimension, whose time-evolution operator is built up from two coin operators which are distinguished by phase factors from $x\geq0$ and $x\leq-1$. We call the QW the {\it complete two-phase QW} to discern from the two-phase QW with one defect\cite{endosan,maman}. Because of its localization properties, the two-phase QWs can be considered as an ideal mathematical model of topological insulators which are novel quantum states of matter characterized by topological invariants. Employing the complete two-phase QW, we present the stationary measure, and two kinds of limit theorems concerning {\it localization} and the {\it ballistic spreading}, which are the characteristic behaviors in the long-time limit of discrete-time QWs in one dimension. As a consequence, we obtain the mathematical expression of the whole picture of the asymptotic behavior of the walker, including dependences on initial states, in the long-time limit. We also clarify relevant symmetries, which are essential for topological insulators, of the complete two-phase QW, and then derive the topological invariant. Having established both mathematical rigorous results and the topological invariant of the complete two-phase QW, we provide solid arguments to understand localization of QWs in term of topological invariant. Furthermore, by applying a concept of {\it topological protections}, we clarify that localization of the two-phase QW with one defect, studied in the previous work\cite{endosan}, can be related to localization of the complete two-phase QW under symmetry preserving perturbations.
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Submitted 22 January, 2021; v1 submitted 13 November, 2015;
originally announced November 2015.
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Tuning Perpendicular Anisotropy Gradient in Co/Pd Multilayers by Ion Irradiation
Authors:
Peter K. Greene,
Julia Osten,
Kilian Lenz,
Jurgen Fassbender,
Catherine Jenkins,
Elke Arenholz,
Tamio Endo,
Nobuyuki Iwata,
Kai Liu
Abstract:
The tunability of Ar+ ion irradiation of Co/Pd multilayers has been employed to create depth-dependent perpendicular anisotropy gradients. By adjusting the Ar+ kinetic energy and fluence, the depth and lateral density of the local structural modification are controlled. First-order reversal curve analysis through X-ray magnetic circular dichroism and conventional magnetometry studies show that the…
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The tunability of Ar+ ion irradiation of Co/Pd multilayers has been employed to create depth-dependent perpendicular anisotropy gradients. By adjusting the Ar+ kinetic energy and fluence, the depth and lateral density of the local structural modification are controlled. First-order reversal curve analysis through X-ray magnetic circular dichroism and conventional magnetometry studies show that the local structural damage weakens the perpendicular anisotropy near the surface, leading to a magnetization tilting towards the in-plane direction. The ion irradiation method is complementary to, and may be used in conjunction with, other synthesis approaches to maximize the anisotropy gradient.
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Submitted 7 August, 2014;
originally announced August 2014.
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Laser-Shock Compression and Hugoniot Measurements of Liquid Hydrogen to 55 GPa
Authors:
T. Sano,
N. Ozaki,
T. Sakaiya,
K. Shigemori,
M. Ikoma,
T. Kimura,
K. Miyanishi,
T. Endo,
A. Shiroshita,
H. Takahashi,
T. Jitsui,
Y. Hori,
Y. Hironaka,
A. Iwamoto,
T. Kadono,
M. Nakai,
T. Okuchi,
K. Otani,
K. Shimizu,
T. Kondo,
R. Kodama,
K. Mima
Abstract:
The principal Hugoniot for liquid hydrogen was obtained up to 55 GPa under laser-driven shock loading. Pressure and density of compressed hydrogen were determined by impedance-matching to a quartz standard. The shock temperature was independently measured from the brightness of the shock front. Hugoniot data of hydrogen provide a good benchmark to modern theories of condensed matter. The initial n…
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The principal Hugoniot for liquid hydrogen was obtained up to 55 GPa under laser-driven shock loading. Pressure and density of compressed hydrogen were determined by impedance-matching to a quartz standard. The shock temperature was independently measured from the brightness of the shock front. Hugoniot data of hydrogen provide a good benchmark to modern theories of condensed matter. The initial number density of liquid hydrogen is lower than that for liquid deuterium, and this results in shock compressed hydrogen having a higher compression and higher temperature than deuterium at the same shock pressure.
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Submitted 6 January, 2011;
originally announced January 2011.
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Phase Transition of Extrinsic Curvature Surface Model on a Disk
Authors:
T. Endo,
M. Egashira,
S. Obata,
H. Koibuchi
Abstract:
An extrinsic curvature surface model is investigated by Monte Carlo simulations on a disk. We found that the model undergoes a first-order transition separating the smooth phase from the collapsed phase. The results in this paper together with the previous ones suggest that the order of the transition is independent of whether the surface is compact (closed) or non-compact (open).
An extrinsic curvature surface model is investigated by Monte Carlo simulations on a disk. We found that the model undergoes a first-order transition separating the smooth phase from the collapsed phase. The results in this paper together with the previous ones suggest that the order of the transition is independent of whether the surface is compact (closed) or non-compact (open).
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Submitted 7 December, 2006;
originally announced December 2006.
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Phase transition of triangulated spherical surfaces supported by elastic chains with rigid junctions
Authors:
T. Endo,
M. Egashira,
S. Obata,
H. Koibuchi
Abstract:
A surface model with skeletons is investigated by using the canonical Monte Carlo simulations. The skeleton is composed of linear chains, which are joined to each other at the rigid junctions. A one-dimensional bending energy is defined on the linear chains, and no two-dimensional curvature energy is assumed on the surface. The model undergoes a first-order transition between the smooth phase an…
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A surface model with skeletons is investigated by using the canonical Monte Carlo simulations. The skeleton is composed of linear chains, which are joined to each other at the rigid junctions. A one-dimensional bending energy is defined on the linear chains, and no two-dimensional curvature energy is assumed on the surface. The model undergoes a first-order transition between the smooth phase and the crumpled phase. We conclude that the first-order transition of the surface model with skeletons is independent of whether the junctions are elastic or rigid.
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Submitted 3 August, 2006; v1 submitted 19 July, 2006;
originally announced July 2006.
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Phase transitions of an intrinsic curvature model on dynamically triangulated spherical surfaces with point boundaries
Authors:
S. Obata,
M. Egashira,
T. Endo,
H. Koibuchi
Abstract:
An intrinsic curvature model is investigated using the canonical Monte Carlo simulations on dynamically triangulated spherical surfaces of size upto N=4842 with two fixed-vertices separated by the distance 2L. We found a first-order transition at finite curvature coefficient α, and moreover that the order of the transition remains unchanged even when L is enlarged such that the surfaces become s…
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An intrinsic curvature model is investigated using the canonical Monte Carlo simulations on dynamically triangulated spherical surfaces of size upto N=4842 with two fixed-vertices separated by the distance 2L. We found a first-order transition at finite curvature coefficient α, and moreover that the order of the transition remains unchanged even when L is enlarged such that the surfaces become sufficiently oblong. This is in sharp contrast to the known results of the same model on tethered surfaces, where the transition weakens to a second-order one as L is increased. The phase transition of the model in this paper separates the smooth phase from the crumpled phase. The surfaces become string-like between two point-boundaries in the crumpled phase. On the contrary, we can see a spherical lump on the oblong surfaces in the smooth phase. The string tension was calculated and was found to have a jump at the transition point. The value of σis independent of L in the smooth phase, while it increases with increasing L in the crumpled phase. This behavior of σis consistent with the observed scaling relation σ\sim (2L/N)^ν, where ν\simeq 0 in the smooth phase, and ν=0.93\pm 0.14 in the crumpled phase. We should note that a possibility of a continuous transition is not completely eliminated.
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Submitted 14 November, 2006; v1 submitted 19 July, 2006;
originally announced July 2006.
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Diamagnetic Response of Normal-Superconducting Double Layers
Authors:
A. Sumiyama,
T. Endo,
Y. Nakagawa,
Y. Oda
Abstract:
The diamagnetism of a normal metal (N: Cu or Au), which is induced by the proximity effect of a superconductor (S: Nb), has been investigated for N-S double layers, which are formed by a thin-film deposition process. Detailed studies of samples, which have different electronic mean-free path \ell_N in N, suggest that \ell_N should be controlled by the impurity concentration rather than the mecha…
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The diamagnetism of a normal metal (N: Cu or Au), which is induced by the proximity effect of a superconductor (S: Nb), has been investigated for N-S double layers, which are formed by a thin-film deposition process. Detailed studies of samples, which have different electronic mean-free path \ell_N in N, suggest that \ell_N should be controlled by the impurity concentration rather than the mechanical imperfections in the lattice in order to clarify the \ell_N dependence of the proximity effect. Both the screening distance ρin N and the parameter νin ρ\propto T^-νincrease with an increase in \ell_N. This result can be understood on the assumption that the normal metal changes its behavior from the "dirty" limit (ξ_N>\ell_N) to the "clean" limit (ξ_N<\ell_N), where ξ_N is the coherence length in N.
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Submitted 10 November, 2000;
originally announced November 2000.
