-
Electrostatic moiré potential from twisted-hBN layers
Authors:
Dong Seob Kim,
Roy C. Dominguez,
Rigo Mayorga-Luna,
Dingyi Ye,
Jacob Embley,
Tixuan Tan,
Yue Ni,
Zhida Liu,
Mitchell Ford,
Frank Y. Gao,
Saba Arash,
Kenji Watanabe,
Takashi Taniguchi,
Suenne Kim,
Chih-Kang Shih,
Keji Lai,
Wang Yao,
Li Yang,
Xiaoqin Li,
Yoichi Miyahara
Abstract:
Moiré superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moiré potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. Γ vs. K). In contrast, tw…
▽ More
Moiré superlattices formed by vertically stacking van der Waals layers host a rich variety of correlated electronic phases and function as novel photonic materials. The moiré potential of the superlattice, however, is fixed by the interlayer coupling of the stacked functional layers (e.g. graphene) and dependent on carrier types (e.g. electrons or holes) and valleys (e.g. Γ vs. K). In contrast, twisted hexagonal boron nitride (hBN) layers are predicted to impose a periodic electrostatic potential that may be used to engineer the properties of an adjacent functional thin layer. Here, we show that this potential is described by a simple theory of electric polarization originating from the interfacial charge redistribution, validated by its dependence on supercell sizes and distance from the twisted interfaces. We demonstrate that the potential depth and profile can be further controlled by assembling a double moiré structure. When the twist angles are similar at the two interfaces, the potential is deepened by adding the potential from the two twisted interfaces, reaching ~ 400 meV. When the twist angles are dissimilar at the two interfaces, multi-level polarization states are observed. As an example of controlling a functional layer, we demonstrate how the electrostatic potential from a twisted hBN substrate impedes exciton diffusion in a semiconductor monolayer. These findings suggest exciting opportunities for engineering properties of an adjacent functional layer using the surface potential of a twisted hBN substrate.
△ Less
Submitted 13 June, 2023;
originally announced June 2023.
-
Phonon Renormalization in Reconstructed MoS$_2$ Moiré Superlattices
Authors:
Jiamin Quan,
Lukas Linhart,
Miao-Ling Lin,
Daehun Lee,
Jihang Zhu,
Chun-Yuan Wang,
Wei-Ting Hsu,
Junho Choi,
Jacob Embley,
Carter Young,
Takashi Taniguchi,
Kenji Watanabe,
Chih-Kang Shih,
Keji Lai,
Allan H. MacDonald,
**-Heng Tan,
Florian Libisch,
Xiaoqin Li
Abstract:
In moiré crystals formed by stacking van der Waals (vdW) materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS$_2$ twisted bilayers, adding a new perspective to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly du…
▽ More
In moiré crystals formed by stacking van der Waals (vdW) materials, surprisingly diverse correlated electronic phases and optical properties can be realized by a subtle change in the twist angle. Here, we discover that phonon spectra are also renormalized in MoS$_2$ twisted bilayers, adding a new perspective to moiré physics. Over a range of small twist angles, the phonon spectra evolve rapidly due to ultra-strong coupling between different phonon modes and atomic reconstructions of the moiré pattern. We develop a new low-energy continuum model for phonons that overcomes the outstanding challenge of calculating properties of large moiré supercells and successfully captures essential experimental observations. Remarkably, simple optical spectroscopy experiments can provide information on strain and lattice distortions in moiré crystals with nanometer-size supercells. The newly developed theory promotes a comprehensive and unified understanding of structural, optical, and electronic properties of moiré superlattices.
△ Less
Submitted 22 September, 2020;
originally announced September 2020.
-
Moiré Excitons in Van der Waals Heterostructures
Authors:
Kha Tran,
Galan Moody,
Fengcheng Wu,
Xiaobo Lu,
Junho Choi,
Akshay Singh,
Jacob Embley,
André Zepeda,
Marshall Campbell,
Kyounghwan Kim,
Amritesh Rai,
Travis Autry,
Daniel A. Sanchez,
Takashi Taniguchi,
Kenji Watanabe,
Nanshu Lu,
Sanjay K. Banerjee,
Emanuel Tutuc,
Li Yang,
Allan H. MacDonald,
Kevin L. Silverman,
Xiaoqin Li
Abstract:
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlati…
▽ More
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moiré potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moiré potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.
△ Less
Submitted 10 July, 2018;
originally announced July 2018.
