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Chemical Interface Dam** by Electrochemical Gold Oxidation
Authors:
Maurice Pfeiffer,
Xinyan Wu,
Fatemeh Ebrahimi,
Nadiia Mameka,
Manfred Eich,
Alexander Petrov
Abstract:
Chemical interface dam** is a change in the effective collision frequency of conduction band electrons in metal originating from a chemical change of the metal interface. In this work, we present in-situ ellipsometric measurements that reveal the chemical interface dam** effect from electrochemical oxidation of single crystal and polycrystalline gold films. We observe an increase in collision…
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Chemical interface dam** is a change in the effective collision frequency of conduction band electrons in metal originating from a chemical change of the metal interface. In this work, we present in-situ ellipsometric measurements that reveal the chemical interface dam** effect from electrochemical oxidation of single crystal and polycrystalline gold films. We observe an increase in collision frequency of up to 21 meV for single-crystalline gold. To compare to results obtained with thiols and metal-oxides on gold nanoparticles, we normalize the collision frequency by the electron mean free path to the surface of the structure. We show that electrochemical gold oxidation provides a stronger effect on collision frequency than these coatings. Similar ellipsometric experiments have previously been conducted to investigate the optical properties of gold oxide, but without taking chemical interface dam** into account. The change in reflection from oxidation of gold was solely attributed to the oxide coating. We also show that the chemical interface dam** effect saturates at a larger effective oxide thickness, which is attributed to the stabilization of the gold-oxide interface.
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Submitted 10 April, 2024;
originally announced April 2024.
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Size dependent photoemission study by electrochemical coarsening of nanoporous gold
Authors:
Fatemeh Ebrahimi,
Xinyan Wu,
Maurice Pfeiffer,
Hagen Renner,
Nadiia Mameka,
Manfred Eich,
Alexander Petrov
Abstract:
The generation and utilization of hot charge carriers in plasmonic materials have emerged as a topic of significant importance, with profound implications across multiple disciplines, including optoelectronics, photovoltaics, photocatalysis, and sensing. In this study, we investigate the hot electron transfer from nanoporous gold (npAu) in dependence of the structure size, utilizing both the nanos…
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The generation and utilization of hot charge carriers in plasmonic materials have emerged as a topic of significant importance, with profound implications across multiple disciplines, including optoelectronics, photovoltaics, photocatalysis, and sensing. In this study, we investigate the hot electron transfer from nanoporous gold (npAu) in dependence of the structure size, utilizing both the nanoscale feature size and the interconnected nature of this material. We employ photoelectron injection from nanoporous gold into the electrolyte under UV illumination as a test electron transfer process. Nanoporous gold thin films with sub-10 nm initial ligament diameter are stepwise coarsened by potential cycles in a photoelectrochemical setup, thereby allowing us to precisely probe the influence of ligament diameter on the photocurrent response. The resulting ligament diameter variations are confirmed by scanning electron microscopy (SEM) analysis. As the ligament diameter increased from 8 to 16 nm, there was a corresponding decrease in quantum efficiency proportional to the inverse ligament diameter squared. Such dependency is expected for electrons excited by surface collisions. For the small ligament diameter of 10 nm we estimate an emission efficiency of excited 6sp electrons as 3.14%, reaching 23% for the surface excited electrons.
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Submitted 4 April, 2024;
originally announced April 2024.
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Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
Authors:
Chuyao Tong,
Annika Kurzmann,
Rebekka Garreis,
Wei Wister Huang,
Samuel Jele,
Marius Eich,
Lev Ginzburg,
Christopher Mittag,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn
Abstract:
Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with addi…
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Pauli blockade mechanisms -- whereby carrier transport through quantum dots is blocked due to selection rules even when energetically allowed -- are a direct manifestation of the Pauli exclusion principle, as well as a key mechanism for manipulating and reading out spin qubits. Pauli spin blockade is well established for systems such as GaAs QDs, but is to be further explored for systems with additional degrees of freedom, such as the valley quantum numbers in carbon-based materials or silicon. Here we report experiments on coupled bilayer graphene double quantum dots, in which the spin and valley states are precisely controlled, enabling the observation of the two-electron combined blockade physics. We demonstrate that the doubly occupied single dot switches between two different ground states with gate and magnetic-field tuning, allowing for the switching of selection rules: with a spin-triplet--valley-singlet ground state, valley-blockade is observed; and with the spin-singlet--valley-triplet ground state, robust spin blockade is shown.
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Submitted 10 February, 2022; v1 submitted 8 June, 2021;
originally announced June 2021.
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Kondo effect and spin-orbit coupling in graphene quantum dots
Authors:
Annika Kurzmann,
Yaakov Kleeorin,
Chuyao Tong,
Rebekka Garreis,
Angelika Knothe,
Marius Eich,
Christopher Mittag,
Carolin Gold,
Folkert K. de Vries,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Yigal Meir,
Thomas Ihn,
Klaus Ensslin
Abstract:
The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - re…
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The Kondo effect is a cornerstone in the study of strongly correlated fermions. The coherent exchange coupling of conduction electrons to local magnetic moments gives rise to a Kondo cloud that screens the impurity spin. Whereas complete Kondo screening has been explored widely, realizations of the underscreened scenario - where only some of several Kondo channels participate in the screening - remain rare. Here we report the observation of fully screened and underscreened Kondo effects in quantum dots in bilayer graphene. More generally, we introduce a unique platform for studying Kondo physics. In contrast to carbon nanotubes, whose curved surfaces give rise to strong spin-orbit coupling breaking the SU(4) symmetry of the electronic states relevant for the Kondo effect, we study a nominally flat carbon material with small spin-orbit coupling. Moreover, the unusual two-electron triplet ground state in bilayer graphene dots provides a route to exploring the underscreened spin-1 Kondo effect.
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Submitted 8 March, 2021;
originally announced March 2021.
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Shell Filling and Trigonal War** in Graphene Quantum Dots
Authors:
Rebekka Garreis,
Angelika Knothe,
Chuyao Tong,
Marius Eich,
Carolin Gold,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin,
Annika Kurzmann
Abstract:
Transport measurements through a few-electron circular quantum dot in bilayer graphene display bunching of the conductance resonances in groups of four, eight and twelve. This is in accordance with the spin and valley degeneracies in bilayer graphene and an additional threefold 'minivalley degeneracy' caused by trigonal war**. For small electron numbers, implying a small dot size and a small dis…
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Transport measurements through a few-electron circular quantum dot in bilayer graphene display bunching of the conductance resonances in groups of four, eight and twelve. This is in accordance with the spin and valley degeneracies in bilayer graphene and an additional threefold 'minivalley degeneracy' caused by trigonal war**. For small electron numbers, implying a small dot size and a small displacement field, a two-dimensional s- and then a p-shell are successively filled with four and eight electrons, respectively. For electron numbers larger than twelve, as the dot size and the displacement field increase, the single-particle ground state evolves into a three-fold degenerate minivalley ground state. A transition between these regimes is observed in our measurements and can be described by band-structure calculations. Measurements in magnetic field confirm Hund's second rule for spin filling of the quantum dot levels, emphasizing the importance of exchange interaction effects.
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Submitted 12 April, 2021; v1 submitted 16 November, 2020;
originally announced November 2020.
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Tunable valley splitting and bipolar operation in graphene quantum dots
Authors:
Chuyao Tong,
Rebekka Garreis,
Angelika Knothe,
Marius Eich,
Agnese Sacchi,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin,
Annika Kurzmann
Abstract:
Quantum states in graphene are four-fold degenerate: two fold in spins, and two fold in valleys.Both degrees of freedom can be utilized for qubit preparations. In our bilayer graphene quantumdots, we demonstrate that the valley g-factorgv, defined analogously as the spin g-factorgsforvalley splitting in perpendicular magnetic field, is tunable by over a factor of 4 from 20 to 90. Wefind that large…
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Quantum states in graphene are four-fold degenerate: two fold in spins, and two fold in valleys.Both degrees of freedom can be utilized for qubit preparations. In our bilayer graphene quantumdots, we demonstrate that the valley g-factorgv, defined analogously as the spin g-factorgsforvalley splitting in perpendicular magnetic field, is tunable by over a factor of 4 from 20 to 90. Wefind that largergvresults from larger electronic dot sizes, determined from the charging energy.This control is achieved by adjusting voltages on merely two gates, which also allows for tuning ofthe dot-lead tunnel coupling. On our versatile device, bipolar operation, charging our quantum dotwith charge carriers of the same or the opposite polarity as the leads, can be performed. Dots ofboth polarity are tunable to the first charge carrier by action of the plunger gate, such that thetransition from an electron to a hole dot can be observed. By adding more gates, this system caneasily be extended to host double dots.
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Submitted 9 September, 2020;
originally announced September 2020.
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Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
Authors:
Yong** Lee,
Angelika Knothe,
Hiske Overweg,
Marius Eich,
Carolin Gold,
Annika Kurzmann,
Veronika Klasovika,
Takashi Taniguchi,
Kenji Wantanabe,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin,
Peter Rickhaus
Abstract:
In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the en…
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In multivalley semiconductors, the valley degree of freedom can be potentially used to store, manipulate and read quantum information, but its control remains challenging. The valleys in bilayer graphene can be addressed by a perpendicular magnetic field which couples by the valley g-factor. However, control over the valley g-factor has not been demonstrated yet. We experimentally determine the energy spectrum of a quantum point contact realized by a suitable gate geometry in bilayer graphene. Using finite bias spectroscopy we measure the energy scales arising from the lateral confinement as well as the Zeeman splitting and find a spin g-factor of 2. The valley g-factor can be tuned by a factor of 3 using vertical electric fields, reaching values between 40 and 120. The results are quantitatively explained by a calculation considering topological magnetic moment and its dependence on confinement and the vertical displacement field.
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Submitted 5 March, 2020; v1 submitted 14 November, 2019;
originally announced November 2019.
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Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
Authors:
Peter Rickhaus,
Giulia Zheng,
Jose L. Lado,
Yong** Lee,
Annika Kurzmann,
Marius Eich,
Riccardo Pisoni,
Chuyao Tong,
Rebekka Garreis,
Carolin Gold,
Michele Masseroni,
Takashi Taniguchi,
Kenji Wantanabe,
Thomas Ihn,
and Klaus Ensslin
Abstract:
Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic in…
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Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to the planes. It has been realized recently that twisted graphene multilayers provide powerful playgrounds to engineer electronic properties by the number of layers, the twist angle, applied electric biases, electronic interactions and elastic relaxations, but crystal fields have not received the attention they deserve. Here we show that the bandstructure of large-angle twisted double bilayer graphene is strongly modified by crystal fields. In particular, we experimentally demonstrate that twisted double bilayer graphene, encapsulated between hBN layers, exhibits an intrinsic bandgap. By the application of an external field, the gaps in the individual bilayers can be closed, allowing to determine the crystal fields. We find that crystal fields point from the outer to the inner layers with strengths in the bottom (top) bilayer of -0.13 V/nm (0.12 V/nm). We show both by means of first principles calculations and low energy models that crystal fields open a band gap in the groundstate. Our results put forward a physical scenario in which a crystal field effect in carbon substantially impacts the low energy properties of twisted double bilayer graphene, suggesting that such contributions must be taken into account in other regimes to faithfully predict the electronic properties of twisted graphene multilayers.
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Submitted 4 November, 2019; v1 submitted 23 October, 2019;
originally announced October 2019.
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The Electronic Thickness of Graphene
Authors:
Peter Rickhaus,
Ming-Hao Liu,
Marcin Kurpas,
Annika Kurzmann,
Yong** Lee,
Hiske Overweg,
Marius Eich,
Riccardo Pisoni,
Takashi Tamaguchi,
Kenji Wantanabe,
Klaus Richter,
Klaus Ensslin,
Thomas Ihn
Abstract:
The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and…
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The van-der-Waals stacking technique enables the fabrication of heterostructures, where two conducting layers are atomically close. In this case, the finite layer thickness matters for the interlayer electrostatic coupling. Here we investigate the electrostatic coupling of two graphene layers, twisted by 22 degrees such that the layers are decoupled by the huge momentum mismatch between the K and K' points of the two layers. We observe a splitting of the zero-density lines of the two layers with increasing interlayer energy difference. This splitting is given by the ratio of single-layer quantum capacitance over interlayer capacitance C and is therefore suited to extract C. We explain the large observed value of C by considering the finite dielectric thickness d of each graphene layer and determine d=2.6 Angstrom. In a second experiment we map out the entire density range with a Fabry-Pérot resonator. We can precisely measure the Fermi-wavelength in each layer, showing that the layers are decoupled. We find that the Fermi wavelength exceeds 600nm at the lowest densities and can differ by an order of magnitude between the upper and lower layer. These findings are reproduced using tight-binding calculations.
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Submitted 1 July, 2019;
originally announced July 2019.
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Excited states in bilayer graphene quantum dots
Authors:
A. Kurzmann,
M. Eich,
H. Overweg,
M. Mangold,
F. Herman,
P. Rickhaus,
R. Pisoni,
Y. Lee,
R. Garreis,
C. Tong,
K. Watanabe,
T. Taniguchi,
K. Ensslin,
T. Ihn
Abstract:
We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole g…
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We report on ground- and excited state transport through an electrostatically defined few-hole quantum dot in bilayer graphene in both parallel and perpendicular applied magnetic fields. A remarkably clear level scheme for the two-particle spectra is found by analyzing finite bias spectroscopy data within a two-particle model including spin and valley degrees of freedom. We identify the two-hole ground-state to be a spin-triplet and valley-singlet state. This spin alignment can be seen as Hund's rule for a valley-degenerate system, which is fundamentally different to quantum dots in carbon nano tubes and GaAs-based quantum dots. The spin-singlet excited states are found to be valley-triplet states by tilting the magnetic field with respect to the sample plane. We quantify the exchange energy to be 0.35meV and measure a valley and spin g-factor of 36 and 2, respectively.
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Submitted 15 April, 2019;
originally announced April 2019.
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Charge detection in gate-defined bilayer graphene quantum dots
Authors:
A. Kurzmann,
H. Overweg,
M. Eich,
A. Pally,
P. Rickhaus,
R. Pisoni,
Y. Lee,
K. Watanabe,
T. Taniguchi,
T. Ihn,
K. Ensslin
Abstract:
We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb…
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We report on charge detection in electrostatically-defined quantum dot devices in bilayer graphene using an integrated charge detector. The device is fabricated without any etching and features a graphite back gate, leading to high quality quantum dots. The charge detector is based on a second quantum dot separated from the first dot by depletion underneath a 150 nm wide gate. We show that Coulomb resonances in the sensing dot are sensitive to individual charging events on the nearby quantum dot. The potential change due to single electron charging causes a step-like change (up to 77 %) in the current through the charge detector. Furthermore, the charging states of a quantum dot with tunable tunneling barriers and of coupled quantum dots can be detected.
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Submitted 17 October, 2019; v1 submitted 13 March, 2019;
originally announced March 2019.
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Superconductivity in the surface state of noble metal gold and its Fermi level tuning by EuS dielectric
Authors:
Peng Wei,
Sujit Manna,
Marius Eich,
Patrick Lee,
Jagadeesh Moodera
Abstract:
The induced superconductivity (SC) in a robust and scalable quantum material with strong Rashba spin-orbit coupling is particularly attractive for generating topological superconductivity and Majorana bound states (MBS). Gold (111) thin film has been proposed as a promising candidate because of the large Rashba energy, the predicted topological nature and the possibility for large-scale MBS device…
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The induced superconductivity (SC) in a robust and scalable quantum material with strong Rashba spin-orbit coupling is particularly attractive for generating topological superconductivity and Majorana bound states (MBS). Gold (111) thin film has been proposed as a promising candidate because of the large Rashba energy, the predicted topological nature and the possibility for large-scale MBS device fabrications. We experimentally demonstrate two important steps towards achieving such a goal. We successfully show induced SC in the Shockley surface state (SS) of ultrathin Au(111) layers grown over epitaxial vanadium films, which is easily achievable on a wafer scale. The emergence of SC in the SS, which is physically separated from a bulk superconductor, is attained by indirect quasiparticle scattering processes instead of by conventional interfacial Andreev reflections. We further show the ability to tune the SS Fermi level (E_F) by interfacing SS with a high-k dielectric ferromagnetic insulator EuS. The shift of E_F from ~ 550 mV to ~34mV in superconducting SS is an important step towards realizing MBS in this robust system.
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Submitted 25 February, 2019;
originally announced February 2019.
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Interactions and magnetotransport through spin-valley coupled Landau levels in monolayer MoS$_{2}$
Authors:
Riccardo Pisoni,
Andor Kormányos,
Matthew Brooks,
Zi** Lei,
Patrick Back,
Marius Eich,
Hiske Overweg,
Yong** Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Atac Imamoglu,
Guido Burkard,
Thomas Ihn,
Klaus Ensslin
Abstract:
The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band structure leads to novel applications in the fields of electronics and optoelectronics. Density functional theory calculations as well as optical experiments have focused on spin-valley coupling in the valence band. Here w…
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The strong spin-orbit coupling and the broken inversion symmetry in monolayer transition metal dichalcogenides (TMDs) results in spin-valley coupled band structures. Such a band structure leads to novel applications in the fields of electronics and optoelectronics. Density functional theory calculations as well as optical experiments have focused on spin-valley coupling in the valence band. Here we present magnetotransport experiments on high-quality n-type monolayer molybdenum disulphide (MoS$_{2}$) samples, displaying highly resolved Shubnikov-de Haas oscillations at magnetic fields as low as $2~T$. We find the effective mass $0.7~m_{e}$, about twice as large as theoretically predicted and almost independent of magnetic field and carrier density. We further detect the occupation of the second spin-orbit split band at an energy of about $15~meV$, i.e. about a factor $5$ larger than predicted. In addition, we demonstrate an intricate Landau level spectrum arising from a complex interplay between a density-dependent Zeeman splitting and spin and valley-split Landau levels. These observations, enabled by the high electronic quality of our samples, testify to the importance of interaction effects in the conduction band of monolayer MoS$_{2}$.
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Submitted 16 December, 2018; v1 submitted 17 June, 2018;
originally announced June 2018.
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Magnetotransport and lateral confinement in an InSe van der Waals Heterostructure
Authors:
Yong** Lee,
Riccardo Pisoni,
Hiske Overweg,
Marius Eich,
Peter Rickhaus,
Amalia Patanè,
Zakhar R. Kudrynskyi,
Zakhar. D. Kovalyuk,
Roman Gorbachev,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin
Abstract:
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measureme…
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In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides (TMDCs), the considerable bandgap and high electron mobility can provide a potential optoelectronic application. Here we present low-temperature transport measurements on a few-layer InSe van der Waals heterostructure with graphene-gated contacts. For high magnetic fields, we observe magnetoresistance minima at even filling factors related to two-fold spin degeneracy. By electrostatic gating with negatively biased split gates, a one-dimensional channel is realized. Close to pinch-off, transport through the constriction is dominated by localized states with charging energies ranging from 2 to 5 meV. This work opens new possibility to explore the low-dimensional physics including quantum point contact and quantum dot.
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Submitted 28 May, 2018;
originally announced May 2018.
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Coupled quantum dots in bilayer graphene
Authors:
Marius Eich,
Riccardo Pisoni,
Alessia Pally,
Hiske Overweg,
Annika Kurzmann,
Yong** Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Ensslin,
Thomas Ihn
Abstract:
Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile and widely tunable multi-quantum dot system. We demonstrate the formation of single, double and triple quantum dots that are free of any sign of disorder. In bi…
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Electrostatic confinement of charge carriers in bilayer graphene provides a unique platform for carbon-based spin, charge or exchange qubits. By exploiting the possibility to induce a band gap with electrostatic gating, we form a versatile and widely tunable multi-quantum dot system. We demonstrate the formation of single, double and triple quantum dots that are free of any sign of disorder. In bilayer graphene we have the possibility to form tunnel barriers using different mechanisms. We can exploit the ambipolar nature of bilayer graphene where pn-junctions form natural tunnel barriers. Alternatively, we can use gates to form tunnel barriers, where we can vary the tunnel coupling by more than two orders of magnitude tuning between a deeply Coulomb blockaded system and a Fabry-Pérot-like cavity. Demonstrating such tunability is an important step towards graphene-based quantum computation.
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Submitted 6 August, 2018; v1 submitted 8 May, 2018;
originally announced May 2018.
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Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
Authors:
Marius Eich,
František Herman,
Riccardo Pisoni,
Hiske Overweg,
Annika Kurzmann,
Yong** Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Manfred Sigrist,
Thomas Ihn,
Klaus Ensslin
Abstract:
In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into…
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In bilayer graphene, electrostatic confinement can be realized by a suitable design of top and back gate electrodes. We measure electronic transport through a bilayer graphene quantum dot, which is laterally confined by gapped regions and connected to the leads via p-n junctions. Single electron and hole occupancy is realized and charge carriers $n = 1, 2,\dots 50$ can be filled successively into the quantum system with charging energies exceeding $10 \ \mathrm{meV}$. For the lowest quantum states, we can clearly observe valley and Zeeman splittings with a spin g-factor of $g_{s}\approx 2$. In the low field-limit, the valley splitting depends linearly on the perpendicular magnetic field and is in qualitative agreement with calculations.
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Submitted 7 August, 2018; v1 submitted 7 March, 2018;
originally announced March 2018.
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Transport through a network of topological states in twisted bilayer graphene
Authors:
Peter Rickhaus,
John Wallbank,
Sergey Slizovskiy,
Riccardo Pisoni,
Hiske Overweg,
Yong** Lee,
Marius Eich,
Ming-Hao Liu,
K. Watanabe,
T. Taniguchi,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin
Abstract:
We explore a network of electronic quantum valley Hall (QVH) states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Pérot and Aharanov-Bohm oscillations which are robust in magnetic fields ranging from 0 to 8T, in strong contrast to more conventional 2D systems where trajectories in the bulk are bent by the Lorentz force. This persistence…
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We explore a network of electronic quantum valley Hall (QVH) states in the moiré crystal of minimally twisted bilayer graphene. In our transport measurements we observe Fabry-Pérot and Aharanov-Bohm oscillations which are robust in magnetic fields ranging from 0 to 8T, in strong contrast to more conventional 2D systems where trajectories in the bulk are bent by the Lorentz force. This persistence in magnetic field and the linear spacing in density indicate that charge carriers in the bulk flow in topologically protected, one dimensional channels. With this work we demonstrate coherent electronic transport in a lattice of topologically protected states.
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Submitted 24 October, 2018; v1 submitted 20 February, 2018;
originally announced February 2018.
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Gate-Tunable Quantum Dot in a High Quality Single Layer MoS$_{\mathrm{2}}$ Van der Waals Heterostructure
Authors:
Riccardo Pisoni,
Zi** Lei,
Patrick Back,
Marius Eich,
Hiske Overweg,
Yong** Lee,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin
Abstract:
We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7 $\times$ 10$^{\mathrm{12}}$ cm$^{\mathrm{-2}}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a sin…
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We have fabricated an encapsulated monolayer MoS$_{\mathrm{2}}$ device with metallic ohmic contacts through a pre-patterned hBN layer. In the bulk, we observe an electron mobility as high as 3000 cm$^{\mathrm{2}}$/Vs at a density of 7 $\times$ 10$^{\mathrm{12}}$ cm$^{\mathrm{-2}}$ at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of the hBN we are able to confine electrons in MoS$_{\mathrm{2}}$ and observe the Coulomb blockade effect. By tuning the middle gate voltage we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.
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Submitted 21 March, 2018; v1 submitted 1 January, 2018;
originally announced January 2018.
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A ferroelectric liquid crystal confined in cylindrical nanopores: Reversible smectic layer buckling, enhanced light rotation and extremely fast electro-optically active Goldstone excitations
Authors:
Mark Busch,
Andriy V. Kityk,
Wiktor Piecek,
Tommy Hofmann,
Dirk Wallacher,
Sylwia Calus,
Przemyslaw Kula,
Martin Steinhart,
Manfred Eich,
Patrick Huber
Abstract:
The orientational and translational order of a thermotropic ferroelectric liquid crystal (2MBOCBC) imbibed in self-organized, parallel, cylindrical pores with radii of 10, 15, or 20 nm in anodic aluminium oxide monoliths (AAO) are explored by high-resolution linear and circular optical birefringence as well as neutron diffraction texture analysis. The results are compared to experiments on the bul…
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The orientational and translational order of a thermotropic ferroelectric liquid crystal (2MBOCBC) imbibed in self-organized, parallel, cylindrical pores with radii of 10, 15, or 20 nm in anodic aluminium oxide monoliths (AAO) are explored by high-resolution linear and circular optical birefringence as well as neutron diffraction texture analysis. The results are compared to experiments on the bulk system. The native oxidic pore walls do not provide a stable smectogen wall anchoring. By contrast, a polymeric wall grafting enforcing planar molecular anchoring results in a thermal-history independent formation of smectic C* helices and a reversible chevron-like layer buckling. An enhancement of the optical rotatory power by up to one order of magnitude of the confined compared to the bulk liquid crystal is traced to the pretransitional formation of helical structures at the smectic-A*-to-smectic-C* transformation. A linear electro-optical birefringence effect evidences collective fluctuations in the molecular tilt vector direction along the confined helical superstructures, i.e. the Goldstone phason excitations typical of the para-to-ferroelectric transition. Their relaxation frequencies increase with the square of the inverse pore radii as characteristic of plane-wave excitations and are two orders of magnitude larger than in the bulk, evidencing an exceptionally fast electro-optical functionality of the liquid-crystalline-AAO nanohybrids.
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Submitted 27 November, 2017;
originally announced November 2017.
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Edge channel confinement in a bilayer graphene $n$-$p$-$n$ quantum dot
Authors:
Hiske Overweg,
Peter Rickhaus,
Marius Eich,
Yong** Lee,
Riccardo Pisoni,
Kenji Watanabe,
Takashi Taniguchi,
Thomas Ihn,
Klaus Ensslin
Abstract:
We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed. This demonstrates that the coupling of the co-propagating modes at the $p$-$n$ interface is weak enough to form a tunnel barrier, facilitating transport of singl…
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We combine electrostatic and magnetic confinement to define a quantum dot in bilayer graphene. The employed geometry couples $n$-doped reservoirs to a $p$-doped dot. At magnetic field values around $B = 2~$T, Coulomb blockade is observed. This demonstrates that the coupling of the co-propagating modes at the $p$-$n$ interface is weak enough to form a tunnel barrier, facilitating transport of single charge carriers onto the dot. This result may be of use for quantum Hall interferometry experiments.
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Submitted 17 January, 2018; v1 submitted 4 September, 2017;
originally announced September 2017.
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Electrostatically induced quantum point contact in bilayer graphene
Authors:
Hiske Overweg,
Hannah Eggimann,
Xi Chen,
Sergey Slizovskiy,
Marius Eich,
Riccardo Pisoni,
Yong** Lee,
Peter Rickhaus,
Kenji Watanabe,
Takashi Taniguchi,
Vladimir Fal'ko,
Thomas Ihn,
Klaus Ensslin
Abstract:
We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$Ω$. This exceeds previously reported values of $R =~$10 - 100 k$Ω$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electroni…
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We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$Ω$. This exceeds previously reported values of $R =~$10 - 100 k$Ω$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $ΔG = 2~e^2/h$ and $ΔG = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.
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Submitted 16 January, 2018; v1 submitted 28 July, 2017;
originally announced July 2017.
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Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS$_2$ van der Waals Heterostructures
Authors:
Riccardo Pisoni,
Yong** Lee,
Hiske Overweg,
Marius Eich,
Pauline Simonet,
Kenji Watanabe,
Takashi Taniguchi,
Roman Gorbachev,
Thomas Ihn,
Klaus Ensslin
Abstract:
We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman ef…
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We have realized encapsulated trilayer MoS$_2$ devices with gated graphene contacts. In the bulk, we observe an electron mobility as high as 7000~cm$^{2}$/(V s) at a density of 3 $\times$ 10$^{12}$~cm$^{-2}$ at a temperature of 1.9~K. Shubnikov--de Haas oscillations start at magnetic fields as low as 0.9~T. The observed 3-fold Landau level degeneracy can be understood based on the valley Zeeman effect. Negatively biased split gate electrodes allow us to form a channel that can be completely pinched off for sufficiently large gate voltages. The measured conductance displays plateau-like features.
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Submitted 21 July, 2017; v1 submitted 30 January, 2017;
originally announced January 2017.
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Oscillating magnetoresistance in graphene p-n junctions at intermediate magnetic fields
Authors:
Hiske Overweg,
Hannah Eggimann,
Ming-Hao Liu,
Anastasia Varlet,
Marius Eich,
Pauline Simonet,
Yong** Lee,
Kenji Watanabe,
Takashi Taniguchi,
Klaus Richter,
Vladimir I. Fal'ko,
Klaus Ensslin,
Thomas Ihn
Abstract:
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute…
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We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where standard Shubnikov-de Haas oscillations are no longer discernible. The oscillatory magnetoresistance can be reproduced by tight-binding simulations. We attribute this phenomenon to the modulated densities of states in the n- and p- regions.
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Submitted 18 May, 2017; v1 submitted 22 December, 2016;
originally announced December 2016.
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Measurement back-action in stacked graphene quantum dots
Authors:
Dominik Bischoff,
Marius Eich,
Oded Zilberberg,
Clemens Rössler,
Thomas Ihn,
Klaus Ensslin
Abstract:
We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying…
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We present an electronic transport experiment in graphene where both classical and quantum mechanical charge detector back-action on a quantum dot are investigated. The device consists of two stacked graphene quantum dots separated by a thin layer of boron nitride. This device is fabricated by van der Waals stacking and is equipped with separate source and drain contacts to both dots. By applying a finite bias to one quantum dot, a current is induced in the other unbiased dot. We present an explanation of the observed measurement-induced current based on strong capacitive coupling and energy dependent tunneling barriers, breaking the spatial symmetry in the unbiased system. This is a special feature of graphene-based quantum devices. The experimental observation of transport in classically forbidden regimes is understood by considering higher order quantum mechanical back-action mechanisms.
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Submitted 27 February, 2016;
originally announced February 2016.
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Thermotropic interface and core relaxation dynamics of liquid crystals in silica glass nanochannels: A dielectric spectroscopy study
Authors:
Sylwia Calus,
Lech Borowik,
Andriy V. Kityk,
Manfred Eich,
Mark Busch,
Patrick Huber
Abstract:
We report dielectric relaxation spectroscopy experiments on two rod-like liquid crystals of the cyanobiphenyl family (5CB and 6CB) confined in tubular nanochannels with 7 nm radius and 340 micrometer length in a monolithic, mesoporous silica membrane. The measurements were performed on composites for two distinct regimes of fractional filling: monolayer coverage at the pore walls and complete fill…
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We report dielectric relaxation spectroscopy experiments on two rod-like liquid crystals of the cyanobiphenyl family (5CB and 6CB) confined in tubular nanochannels with 7 nm radius and 340 micrometer length in a monolithic, mesoporous silica membrane. The measurements were performed on composites for two distinct regimes of fractional filling: monolayer coverage at the pore walls and complete filling of the pores. For the layer coverage a slow surface relaxation dominates the dielectric properties. For the entirely filled channels the dielectric spectra are governed by two thermally-activated relaxation processes with considerably different relaxation rates: A slow relaxation in the interface layer next to the channel walls and a fast relaxation in the core region of the channel filling. The strengths and characteristic frequencies of both relaxation processes have been extracted and analysed as a function of temperature. Whereas the temperature dependence of the static capacitance reflects the effective (average) molecular ordering over the pore volume and is well described within a Landau-de Gennes theory, the extracted relaxation strengths of the slow and fast relaxation processes provide an access to distinct local molecular ordering mechanisms. The order parameter in the core region exhibits a bulk-like behaviour with a strong increase in the nematic ordering just below the paranematic-to-nematic transition temperature T_PN and subsequent saturation during cooling. By contrast, the surface ordering evolves continuously with a kink near T_PN. A comparison of the thermotropic behaviour of the monolayer with the complete filling reveals that the molecular order in the core region of the pore filling affects the order of the peripheral molecular layers at the wall.
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Submitted 16 August, 2015;
originally announced August 2015.
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Graphene nanoribbons with wings
Authors:
D. Bischoff,
M. Eich,
F. Libisch,
T. Ihn,
K. Ensslin
Abstract:
We have investigated electronic transport in graphene nanoribbon devices with additional bar-shaped extensions ("wings") at each side of the device. We find that the Coulomb-blockade dominated transport found in conventional ribbons is strongly modified by the presence of the extensions. States localized far away from the central ribbon contribute significantly to transport. We discuss these findi…
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We have investigated electronic transport in graphene nanoribbon devices with additional bar-shaped extensions ("wings") at each side of the device. We find that the Coulomb-blockade dominated transport found in conventional ribbons is strongly modified by the presence of the extensions. States localized far away from the central ribbon contribute significantly to transport. We discuss these findings within the picture of multiple coupled quantum dots. Finally, we compare the experimental results with tight-binding simulations which reproduce the experiment both qualitatively and quantitatively.
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Submitted 19 June, 2015;
originally announced June 2015.
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Measuring the local quantum capacitance of graphene using a strongly coupled graphene nanoribbon
Authors:
D. Bischoff,
M. Eich,
A. Varlet,
P. Simonet,
T. Ihn,
K. Ensslin
Abstract:
We present electrical transport measurements of a van-der-Waals heterostructure consisting of a graphene nanoribbon separated by a thin boron nitride layer from a micron-sized graphene sheet. The interplay between the two layers is discussed in terms of screening or, alternatively, quantum capacitance. The ribbon can be tuned into the transport gap by applying gate voltages. Multiple sites of loca…
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We present electrical transport measurements of a van-der-Waals heterostructure consisting of a graphene nanoribbon separated by a thin boron nitride layer from a micron-sized graphene sheet. The interplay between the two layers is discussed in terms of screening or, alternatively, quantum capacitance. The ribbon can be tuned into the transport gap by applying gate voltages. Multiple sites of localized charge leading to Coulomb blockade are observed in agreement with previous experiments. Due to the strong capacitive coupling between the ribbon and the graphene top layer sheet, the evolution of the Coulomb blockade peaks in gate voltages can be used to obtain the local density of states and therefore the quantum capacitance of the graphene top layer. Spatially varying density and do** are found which are attributed to a spatial variation of the dielectric due to fabrication imperfections.
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Submitted 28 May, 2015;
originally announced May 2015.
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Inhomogeneous Relaxation Dynamics and Phase Behaviour of a Liquid Crystal Confined in a Nanoporous Solid
Authors:
Sylwia Calus,
Andriy V. Kityk,
Manfred Eich,
Patrick Huber
Abstract:
We report filling-fraction dependent dielectric spectroscopy measurements on the relaxation dynamics of the rod-like nematogen 7CB condensed in 13 nm silica nanochannels. In the film-condensed regime, a slow interface relaxation dominates the dielectric spectra, whereas from the capillary-condensed state up to complete filling an additional, fast relaxation in the core of the channels is found. Th…
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We report filling-fraction dependent dielectric spectroscopy measurements on the relaxation dynamics of the rod-like nematogen 7CB condensed in 13 nm silica nanochannels. In the film-condensed regime, a slow interface relaxation dominates the dielectric spectra, whereas from the capillary-condensed state up to complete filling an additional, fast relaxation in the core of the channels is found. The temperature-dependence of the static capacitance, representative of the averaged, collective molecular orientational ordering, indicates a continuous, paranematic-to-nematic (P-N) transition, in contrast to the discontinuous bulk behaviour. It is well described by a Landau-de-Gennes free energy model for a phase transition in cylindrical confinement. The large tensile pressure of 10 MPa in the capillary-condensed state, resulting from the Young-Laplace pressure at highly curved liquid menisci, quantitatively accounts for a downward-shift of the P-N transition and an increased molecular mobility in comparison to the unstretched liquid state of the complete filling. The strengths of the slow and fast relaxations provide local information on the orientational order: The thermotropic behaviour in the core region is bulk-like, i.e. it is characterized by an abrupt onset of the nematic order at the P-N transition. By contrast, the interface ordering exhibits a continuous evolution at the P-N transition. Thus, the phase behaviour of the entirely filled liquid crystal-silica nanocomposite can be quantitatively described by a linear superposition of these distinct nematic order contributions.
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Submitted 19 April, 2015;
originally announced April 2015.
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Hyperbolic blackbody
Authors:
Svend-Age Biehs,
Slawa Lang,
Alexander Yu. Petrov,
Manfred Eich,
Philippe Ben-Abdallah
Abstract:
The blackbody theory is revisited in the case of thermal electromagnetic fields inside uniaxial anisotropic media in thermal equilibrium with a heat bath. When these media are hyperbolic, we show that the spectral energy density of these fields radically differs from that predicted by Planck's blackbody theory. We demonstrate that the maximum of their spectral energy density is shifted towards fre…
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The blackbody theory is revisited in the case of thermal electromagnetic fields inside uniaxial anisotropic media in thermal equilibrium with a heat bath. When these media are hyperbolic, we show that the spectral energy density of these fields radically differs from that predicted by Planck's blackbody theory. We demonstrate that the maximum of their spectral energy density is shifted towards frequencies smaller than Wien's frequency making these media apparently colder. Finally, we derive Stefan-Boltzmann's law for hyperbolic media which becomes a quadratic function of the heat bath temperature.
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Submitted 22 February, 2015;
originally announced February 2015.
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Large penetration depth of near-field heat flux in hyperbolic media
Authors:
Slawa Lang,
Maria Tschikin,
Svend-Age Biehs,
Alexander Yu. Petrov,
Manfred Eich
Abstract:
We compare super-Planckian thermal radiation between phonon-polaritonic media and hyperbolic metamaterials. In particular, we determine the penetration depth of thermal photons inside the absorbing medium for three different structures: two semi-infinite phonon-polaritonic media supporting surface modes, two multilayer hyperbolic metamaterials and two nanowire hyperbolic metamaterials. We show tha…
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We compare super-Planckian thermal radiation between phonon-polaritonic media and hyperbolic metamaterials. In particular, we determine the penetration depth of thermal photons inside the absorbing medium for three different structures: two semi-infinite phonon-polaritonic media supporting surface modes, two multilayer hyperbolic metamaterials and two nanowire hyperbolic metamaterials. We show that for hyperbolic modes the penetration depth can be orders of magnitude larger than for surface modes suggesting that hyperbolic materials are much more preferable for near-field thermophotovoltaic applications than pure phonon-polaritonic materials.
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Submitted 21 March, 2014;
originally announced March 2014.
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Radiative heat flux predictions in hyperbolic metamaterials
Authors:
Maria Tschikin,
Svend-Age Biehs,
Philippe Ben-Abdallah,
Slawa Lang,
Alexander Petrov,
Manfred Eich
Abstract:
The transport of heat mediated by thermal photons in hyperbolic multilayer metamaterials is studied using the fluctuational electrodynamics theory. We demonstrate that in comparison to bulk materials the flux inside layered hyperbolic materials can be transported at much longer distances, making these media very promising for thermal management and for near-field energy harvesting.
The transport of heat mediated by thermal photons in hyperbolic multilayer metamaterials is studied using the fluctuational electrodynamics theory. We demonstrate that in comparison to bulk materials the flux inside layered hyperbolic materials can be transported at much longer distances, making these media very promising for thermal management and for near-field energy harvesting.
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Submitted 8 April, 2015; v1 submitted 11 March, 2014;
originally announced March 2014.
