Showing 1–50 of 72 results for author: Edmonds, M

Reactivity of ultra-thin Kagome Metal FeSn towards Oxygen and Water

Authors: James Blyth, Sadhana Sridhar, Mengting Zhao, Sajid Ali2, Thi Hai Yen Vu, Qile Li, Johnathon Maniatis, Grace Causer, Michael S. Fuhrer, Nikhil V. Medhekar, Anton Tadich, Mark Edmonds

Abstract: The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is cr… ▽ More The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is crucial for its development and long-term operation in future devices. In this work, we realize large area, sub-10 nm epitaxial FeSn thin films, and explore the oxidation process via synchrotron-based photoelectron spectroscopy using in-situ oxygen and water dosing, as well as ex-situ air exposure. Upon exposure to atmosphere the FeSn films are shown to be highly reactive, with a stable ~3 nm thick oxide layer forming at the surface within 10 minutes. Notably the surface Fe remains largely unoxidized when compared to Sn, which undergoes near-complete oxidation. This is further confirmed with controlled in-situ dosing of O2 and H2O where only the Sn2 (stanene) inter-layers within the FeSn lattice oxidize, suggesting the Fe3Sn kagome layers remain almost pristine. These results are in excellent agreement with first principles calculations, which show Fe-O bonds to the Fe3Sn layer are energetically unfavorable, and furthermore, a large formation energy preference of 1.37 eV for Sn-O bonds in the stanene Sn2 layer over Sn-O bonds in the kagome Fe3Sn layer. The demonstration that oxidation only occurs within the stanene layers may provide new avenues in how to engineer, handle and prepare future kagome metal devices. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Comments: 21 pages, 5 figures, 4 SI figures

2024 roadmap on 2D topological insulators

Authors: Bent Weber, Michael S Fuhrer, Xian-Lei Sheng, Shengyuan A Yang, Ronny Thomale, Saquib Shamim, Laurens W Molenkamp, David Cobden, Dmytro Pesin, Harold J W Zandvliet, Pantelis Bampoulis, Ralph Claessen, Fabian R Menges, Johannes Gooth, Claudia Felser, Chandra Shekhar, Anton Tadich, Mengting Zhao, Mark T Edmonds, Junxiang Jia, Maciej Bieniek, Jukka I Väyrynen, Dimitrie Culcer, Bhaskaran Muralidharan, Muhammad Nadeem

Abstract: 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc… ▽ More 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Massive Dirac Fermions and Strong Shubnikov-de Haas Oscillations in Topological Insulator Sm,Fe:Bi2Se3 Single Crystals

Authors: Weiyao Zhao, Chi Xuan Trang, Qile Li, Lei Chen, Zengji Yue, Abdulhakim Bake, Cheng Tan, Lan Wang, Mitchell Nancarrow, Mark Edmonds, David Cortie, Xiaolin Wang

Abstract: Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we present a co-do** strategy using synergistic rare-earth Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both tran… ▽ More Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we present a co-do** strategy using synergistic rare-earth Sm and transition-metal Fe dopants in Bi2Se3 single crystals, which combine the advantages of both transition metal doped TI (high ferromagnetic ordering temperature and observed QAHE), and rare-earth doped TI (large magnetic moments and significant spin orbit coupling). In the as-grown single crystals, clear evidences of ferromagnetic ordering were observed. The angle resolve photoemission spectroscopy indicate the ferromagnetism opens a 44 meV band gap at surface Dirac point. Moreover, the carrier mobility at 3 K is ~ 7400 cm2/Vs, and we thus observed an ultra-strong Shubnikov-de Haas oscillation in the longitudinal resistivity, as well as the Hall steps in transverse resistivity below 14 T. Our transport and angular resolved photoemission spectroscopy results suggest that the rare-earth and transition metal co-do** in Bi2Se3 system is a promising avenue implement the quantum anomalous Hall effect, as well as harnessing the massive Dirac fermion in electrical devices. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 5 figures

Journal ref: Physical Review B 104, 085153 (2021)

Imaging topological polar structures in marginally twisted 2D semiconductors

Authors: Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella, Md Hemayet Uddin, Kaijian Xing, Weiyao Zhao, Seng Huat Lee, Zhiqiang Mao, Jack B. Muir, Linnan Jia, Jeffrey A. Davis, Kenji Watanabe, Takashi Taniguchi, Shaffique Adam, Pankaj Sharma, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-o… ▽ More Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained systems. Here we utilise angle-resolved, high-resolution vector piezoresponse force microscopy (PFM) to spatially resolve polarization components and topological polar nanostructures in marginally twisted bilayer WSe2, and provide experimental proof for the existence of topologically non-trivial meron/antimeron structures. We observe both Bloch-type and Neel-type merons, allowing us to differentiate between moire superlattices formed due to twist or heterogeneous strain. This first demonstration of non-trivial real-space topology in a twisted van der Waals heterostructure opens pathways for exploring the connection between twist and topology in engineered nano-devices. △ Less

Submitted 23 May, 2024; originally announced May 2024.

On the Road with a Diamond Magnetometer

Authors: S. M. Graham, A. J. Newman, C. J. Stephen, A. M. Edmonds, D. J. Twitchen, M. L. Markham, G. W. Morley

Abstract: Nitrogen vacancy centres in diamond can be used for vector magnetometry. In this work we present a portable vector diamond magnetometer. Its vector capability, combined with feedback control and robust structure enables operation on moving platforms. While placed on a trolley, magnetic map** of a room is demonstrated and the magnetometer is also shown to be operational in a moving van with the m… ▽ More Nitrogen vacancy centres in diamond can be used for vector magnetometry. In this work we present a portable vector diamond magnetometer. Its vector capability, combined with feedback control and robust structure enables operation on moving platforms. While placed on a trolley, magnetic map** of a room is demonstrated and the magnetometer is also shown to be operational in a moving van with the measured magnetic field shifts for the x, y, and z axes being tagged with GPS coordinates. These magnetic field measurements are in agreement with measurements taken simultaneously with a fluxgate magnetometer. △ Less

Submitted 31 January, 2024; v1 submitted 29 January, 2024; originally announced January 2024.

Comments: 25 pages, 32 figures

Quasi-free-standing AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, John Riley, Eric Huwald, Kevin M. Daniels, Rachael L. Myers-Ward, Mark T. Edmonds, Nikhil Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminatin… ▽ More We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on Ca-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Comments: 14 pages, 3 figures

Floquet engineering in the presence of optically excited carriers

Authors: Mitchell A. Conway, Jonathan O. Tollerud, Thi-Hai-Yen Vu, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis

Abstract: Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still be… ▽ More Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still being able to accurately resolve bandstructure changes. Here, we drive an AC-Stark effect in monolayer WS$_2$ using pulses with constant fluence but varying pulse duration (from 25-235~fs). With shorter pump pulses, the corresponding increase in peak intensity introduces additional carriers via two-photon absorption, leading to additional decoherence and peak broadening (which makes it difficult to resolve the AC-Stark shift). We use multidimensional coherent spectroscopy to create a coherent ensemble of excitons in monolayer WS$_2$ and measure the evolution of the coherence throughout the duration of the Floquet pump pulse. Changes to the amplitude of the macroscopic coherence quantifies the additional broadening. At the same time, the evolution of the average phase allows the instantaneous changes to the bandstructure to be quantified, and is not impacted by the additional broadening. This approach to measuring the evolution of Floquet-Bloch states demonstrates a means to quantify effective heating and non-adiabaticity caused by excited carriers, while at the same time resolving the coherent evolution of the bandstructure. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Journal ref: Physical Review B 109, 104302 (2024)

Quantum vacuum effects in non-relativistic quantum field theory

Authors: Matthew Edmonds, Antonino Flachi, Marco Pasini

Abstract: Nonlinearities in the dispersion relations associated with different interactions designs, boundary conditions and the existence of a physical cut-off scale can alter the quantum vacuum energy of a nonrelativistic system nontrivially. As a material realization of this, we consider a 1D-periodic rotating, interacting non-relativistic setup. The quantum vacuum energy of such a system is expected to… ▽ More Nonlinearities in the dispersion relations associated with different interactions designs, boundary conditions and the existence of a physical cut-off scale can alter the quantum vacuum energy of a nonrelativistic system nontrivially. As a material realization of this, we consider a 1D-periodic rotating, interacting non-relativistic setup. The quantum vacuum energy of such a system is expected to comprise two contributions: a fluctuation-induced quantum contribution and a repulsive centrifugal-like term. We analyze the problem in detail within a complex Schoedinger quantum field theory with a quartic interaction potential and perform the calculations non-perturbatively in the interaction strength by exploiting the nonlinear structure of the associated nonlinear Schroedinger equation. Calculations are done in both zeta-regularization, as well as by introducing a cut-off scale. We find a generic, regularization-independent behavior, where the competition between the interaction and rotation can be balanced at some critical ring-size, where the quantum vacuum energy has a maxima and the force changes sign. The inclusion of a cut-off smoothes out the vacuum energy at small distance but leaves unaltered the long distance behavior. We discuss how this behavior can be tested with ultracold-atoms. △ Less

Submitted 14 September, 2023; originally announced September 2023.

Comments: 10 pages, 3 figures

Journal ref: Phys. Rev. D 108, L121702 (2023)

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)

Authors: Jimmy C. Kotsakidis, Marc Currie, Antonija Grubišić-Čabo, Anton Tadich, Rachael L. Myers-Ward, Matthew DeJarld, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Amadeo L. Vázquez de Parga, Michael S. Fuhrer, D. Kurt Gaskill

Abstract: Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by las… ▽ More Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by laser patterning (ablating) the graphene to form micron-sized discontinuities. We then use low energy electron diffraction to verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron spectroscopy to determine the Mg intercalation rate for patterned and non-patterned samples. By modeling Mg intercalation with the Verhulst equation, we find that the intercalation rate increase for the patterned sample is 4.5$\pm$1.7. Since the edge length of the patterned sample is $\approx$5.2 times that of the non-patterned sample, the model implies that the increased intercalation rate is proportional to the increase in edge length. Moreover, Mg intercalation likely begins at graphene discontinuities in pristine samples (not step edges or flat terraces), where the 2D-like crystal growth of Mg-silicide proceeds. Our laser patterning technique may enable the rapid intercalation of other atomic or molecular species, thereby expanding upon the library of intercalants used to modify the characteristics of graphene, or other 2D materials and heterostructures. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Comments: 24 pages, 4 figures

Journal ref: Advanced Materials Interfaces 8.23 (2021): 2101598

Antiferromagnetic topological insulating state in Tb$_{0.02}$Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystals

Authors: Lei Guo, Weiyao Zhao, Qile Li, Meng Xu, Lei Chen, Abdulhakim Bake, Thi-Hai-Yen Vu, Yahua He, Yong Fang, David Cortie, Sung-Kwan Mo, Mark Edmonds, Xiaolin Wang, Shuai Dong, Julie Karel, Ren-Kui Zheng

Abstract: Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed inmagnetic-topological-insulator-based devices. In this work, we report a successful do** of rare earth element Tb into Bi$_{1.08}$Sb… ▽ More Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed inmagnetic-topological-insulator-based devices. In this work, we report a successful do** of rare earth element Tb into Bi$_{1.08}$Sb$_{0.9}$Te$_2$S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ~10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ~ 150 K. At low temperatures, strong Shubnikov-de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi$_{1.08}$Sb$_{0.9}$Te$_2$S single crystal provides an ideal platform for quantum transport studies and potential applications. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: 15 pages, 3 figures

Journal ref: Physical Review B 107.12 (2023): 125125

Defects, band bending and ionization rings in MoS2

Authors: Iolanda Di Bernardo, James Blyth, Liam Watson, Kaijian Xing, Yi-Hsun Chen, Shao-Yu Chen, Mark T. Edmonds, Michael S. Fuhrer

Abstract: Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a comb… ▽ More Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy (STM) and STS to study embedded sulphur vacancies in bulk MoS2 crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending (TIBB). The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: 7 pages, 5 figures

Journal ref: Journal of Physics: Condensed Matter 34 (17), 174002, 2022

Tensor gradiometry with a diamond magnetometer

Authors: A. J. Newman, S. M. Graham, A. M. Edmonds, D. J. Twitchen, M. L. Markham, G. W. Morley

Abstract: Vector magnetometry provides more information than scalar measurements for magnetic surveys utilized in space, defense, medical, geological and industrial applications. These areas would benefit from a mobile vector magnetometer that can operate in extreme conditions. Here we present a scanning fiber-coupled nitrogen vacancy (NV) center vector magnetometer. Feedback control of the microwave excita… ▽ More Vector magnetometry provides more information than scalar measurements for magnetic surveys utilized in space, defense, medical, geological and industrial applications. These areas would benefit from a mobile vector magnetometer that can operate in extreme conditions. Here we present a scanning fiber-coupled nitrogen vacancy (NV) center vector magnetometer. Feedback control of the microwave excitation frequency is employed to improve dynamic range and maintain sensitivity during movement of the sensor head. Tracking of the excitation frequency shifts for all four orientations of the NV center allow us to image the vector magnetic field of a damaged steel plate. We calculate the magnetic tensor gradiometry images in real time, and they allow us to detect smaller damage than is possible with vector or scalar imaging. △ Less

Submitted 11 July, 2023; originally announced July 2023.

Comments: 6 pages, 5 figures

Journal ref: Physical Review Applied 21, 014003 (2024)

Effects of Floquet Engineering on the Coherent Exciton Dynamics in Monolayer WS$_2$

Authors: Mitchell A. Conway, Stuart K. Earl, Jack B. Muir, Thi-Hai-Yen Vu, Jonathan O. Tollerud, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis

Abstract: Coherent optical manipulation of electronic bandstructures via Floquet Engineering is a promising means to control quantum systems on an ultrafast timescale. However, the ultrafast switching on/off of the driving field comes with questions regarding the limits of validity of the Floquet formalism, which is defined for an infinite periodic drive, and to what extent the transient changes can be driv… ▽ More Coherent optical manipulation of electronic bandstructures via Floquet Engineering is a promising means to control quantum systems on an ultrafast timescale. However, the ultrafast switching on/off of the driving field comes with questions regarding the limits of validity of the Floquet formalism, which is defined for an infinite periodic drive, and to what extent the transient changes can be driven adibatically. Experimentally addressing these questions has been difficult, in large part due to the absence of an established technique to measure coherent dynamics through the duration of the pulse. Here, using multidimensional coherent spectroscopy we explicitly excite, control, and probe a coherent superposition of excitons in the $K$ and $K^\prime$ valleys in monolayer WS$_2$. With a circularly polarized, red-detuned, pump pulse, the degeneracy of the $K$ and $K^\prime$ excitons can be lifted and the phase of the coherence rotated. We demonstrate phase rotations during the 100 fs driving pulse that exceed $π$, and show that this can be described by a combination of the AC-Stark shift of excitons in one valley and Bloch-Siegert shift of excitons in the opposite valley. Despite showing a smooth evolution of the phase that directly follows the intensity envelope of the pump pulse, the process is not perfectly adiabatic. By measuring the magnitude of the macroscopic coherence as it evolves before, during, and after the pump pulse we show that there is additional decoherence caused by power broadening in the presence of the pump. This non-adiabaticity may be a problem for many applications, such as manipulating q-bits in quantum information processing, however these measurements also suggest ways such effects can be minimised or eliminated. △ Less

Submitted 29 January, 2023; originally announced January 2023.

Journal ref: ACS Nano 17, 14545 (2023)

Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi$_2$Te$_4$

Authors: Qile Li, Iolanda Di Bernardo, Johnathon Maniatis, Daniel McEwen, Liam Watson, Benjamin Lowe, Thi-Hai-Yen Vu, Chi Xuan Trang, **woong Hwang, Sung-Kwan Mo, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stab… ▽ More Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realising QAH effect at higher temperatures. Here we use a scanning tunnelling microscope to directly map the size of the exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5-layer MnBi$_2$Te$_4$. We observe long-range fluctuations of Eg,ex with values ranging between 0 (gapless) and 70 meV, uncorrelated to individual point defects. We directly image the breakdown of topological protection, showing that the chiral edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless metallic regions in the bulk. Finally, we unambiguously demonstrate that the gapless regions originate in magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. Our results indicate that overcoming magnetic disorder is key to exploiting the unique properties of QAH insulators. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Quantum vacuum, rotation, and nonlinear fields

Authors: Antonino Flachi, Matthew Edmonds

Abstract: In this paper, we extend previous results on the quantum vacuum or Casimir energy, for a noninteracting rotating system and for an interacting nonrotating system, to the case where both rotation and interactions are present. Concretely, we first reconsider the noninteracting rotating case of a scalar field theory and propose an alternative and simpler method to compute the Casimir energy based on… ▽ More In this paper, we extend previous results on the quantum vacuum or Casimir energy, for a noninteracting rotating system and for an interacting nonrotating system, to the case where both rotation and interactions are present. Concretely, we first reconsider the noninteracting rotating case of a scalar field theory and propose an alternative and simpler method to compute the Casimir energy based on a replica trick and the Coleman-Weinberg effective potential. We then consider the simultaneous effect of rotation and interactions, including an explicit breaking of rotational symmetry. To study this problem, we develop a numerical implementation of zeta function regularization. Our work recovers previous results as limiting cases and shows that the simultaneous inclusion of rotation and interactions produces nontrivial changes in the quantum vacuum energy. Besides expected changes (where, as the size of the ring increases for fixed interaction strength, the angular momentum grows with the angular velocity), we notice that the way rotation combines with the coupling constant amplifies the intensity of the interaction strength. Interestingly, we also observe a departure from the typical massless behavior where the Casimir energy is proportional to the inverse size of the ring. △ Less

Submitted 1 February, 2023; v1 submitted 6 December, 2022; originally announced December 2022.

Comments: 13 pages; 5 figures

Journal ref: Physical Review D 107, 025008 (2023)

Giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator

Authors: Pin Lyu, Joachim Sødequist, Xiaoyu Sheng, Zhizhan Qiu, Anton Tadich, Qile Li, Mark T. Edmonds, Jesús Redondo, Martin Švec, Thomas Olsen, Jiong Lu

Abstract: Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between the exchange and Coulomb interactions. The ability to tune the Coulomb interaction in such strongly correlated materials enables the precise control of spin-correlated flat-band states, bandgap (Eg) and unconventional magnetism, all of which are crucial for next-generation spintro… ▽ More Emergent quantum phenomena in two-dimensional van der Waal (vdW) magnets are largely governed by the interplay between the exchange and Coulomb interactions. The ability to tune the Coulomb interaction in such strongly correlated materials enables the precise control of spin-correlated flat-band states, bandgap (Eg) and unconventional magnetism, all of which are crucial for next-generation spintronics and magnonics applications. Here, we demonstrate a giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in magnetic chromium tribromide (CrBr3) monolayers grown on graphene. Our gate-dependent scanning tunneling spectroscopy (STS) studies reveal that the inter-flat-band spacing and bandgap of CrBr3 can be continuously tuned by 120 meV and 240 meV respectively via electrostatic injection of carriers into the hybrid CrBr3/graphene system, equivalent to the modulation of the Cr on-site Coulomb repulsion energy by 500 meV. This can be attributed to the self-screening of CrBr3 arising from the gate-induced carriers injected into CrBr3, which dominates over the opposite trend from the remote screening of the graphene substrate. Precise tuning of the spin-correlated flat-band states and bandgap in 2D magnets via electrostatic modulation of Coulomb interactions not only provides new strategies for optimizing the spin transport channels but also may exert a crucial influence on the exchange energy and spin-wave gap, which could raise the critical temperature for magnetic order. △ Less

Submitted 6 December, 2022; originally announced December 2022.

Comments: 21 pages, 4 figures

Fiber-coupled Diamond Magnetometry with an Unshielded 30 pT/$\sqrt{\textrm{Hz}}$ Sensitivity

Authors: S. M. Graham, A. T. M. A. Rahman, L. Munn, R. L. Patel, A. J. Newman, C. J. Stephen, G. Colston, A. Nikitin, A. M. Edmonds, D. J. Twitchen, M. L. Markham, G. W. Morley

Abstract: Ensembles of nitrogen vacancy centres (NVCs) in diamond can be employed for sensitive magnetometry. In this work we present a fiber-coupled NVC magnetometer with an unshielded sensitivity of (30 $\pm$ 10) pT/$\sqrt{\textrm{Hz}}$ in a (10 - 500)-Hz frequency range. This sensitivity is enabled by a relatively high green-to-red photon conversion efficiency, the use of a [100] bias field alignment, mi… ▽ More Ensembles of nitrogen vacancy centres (NVCs) in diamond can be employed for sensitive magnetometry. In this work we present a fiber-coupled NVC magnetometer with an unshielded sensitivity of (30 $\pm$ 10) pT/$\sqrt{\textrm{Hz}}$ in a (10 - 500)-Hz frequency range. This sensitivity is enabled by a relatively high green-to-red photon conversion efficiency, the use of a [100] bias field alignment, microwave and lock-in amplifier (LIA) parameter optimisation, as well as a balanced hyperfine excitation scheme. Furthermore, a silicon carbide (SiC) heat spreader is used for microwave delivery, alongside low-strain $^{12}\textrm{C}$ diamonds, one of which is placed in a second magnetically insensitive fluorescence collecting sensor head for common-mode noise cancellation. The magnetometer is capable of detecting signals from sources such as a vacuum pump up to 2 m away, with some orientation dependence but no complete dead zones, demonstrating its potential for use in remote sensing applications. △ Less

Submitted 23 March, 2023; v1 submitted 16 November, 2022; originally announced November 2022.

Comments: 21 pages, 19 figures, correction to data analysis

Journal ref: Physical Review Applied 19, 044042 (2023)

A telecom O-band emitter in diamond

Authors: Sounak Mukherjee, Zi-Huai Zhang, Daniel G. Oblinsky, Mitchell O. de Vries, Brett C. Johnson, Brant C. Gibson, Edwin L. H. Mayes, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Ádám Gali, Gergő Thiering, Adam Dalis, Timothy Dumm, Gregory D. Scholes, Alastair Stacey, Philipp Reineck, Nathalie P. de Leon

Abstract: Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which… ▽ More Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range, which are incompatible with long-distance fiber communication and unfavorable for imaging in biological tissues. Here, we report the experimental observation of a new color center that emits in the telecom O-band, which we observe in silicon-doped bulk single crystal diamonds and microdiamonds. Combining absorption and photoluminescence measurements, we identify a zero-phonon line at 1221 nm and phonon replicas separated by 42 meV. Using transient absorption spectroscopy, we measure an excited state lifetime of around 270 ps and observe a long-lived baseline that may arise from intersystem crossing to another spin manifold. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Visualization of Strain-Induced Landau Levels in a Graphene - Black Phosphorus Heterostructure

Authors: Thi-Hai-Yen Vu, Pin Lyu, Na Hyun Jo, Chi Xuan Trang, Qile Li, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Jiong Lu, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications. Strain engineering on graphene has been achieved via random nanobubbles or artificial nanostructures on the substrate, but the highly localized and non-uniform pseud… ▽ More Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications. Strain engineering on graphene has been achieved via random nanobubbles or artificial nanostructures on the substrate, but the highly localized and non-uniform pseudomagnetic fields can make spectroscopic probes of electronic structure difficult. Heterostructure engineering offers an alternative approach: By stacking graphene on top of another van der Waals material with large lattice mismatch at a desired twist angle, it is possible to generate large strain-induced pseudo magnetic fields uniformly over the entire heterostructure. Here, we report using nano-angle resolved photoemission spectroscopy (nano-ARPES) to probe the electronic bandstructure of a graphene/black phosphorus heterostructure (G/BP). By directly measuring the iso-energy contours of graphene and black phosphorus we determine a twist angle of 20-degrees in our heterostructure. High-resolution nano-ARPES of the graphene bands near the Fermi level reveals the emergence of flat bands located within the Dirac cone. The spacing of the flat bands is consistent with Landau level formation in graphene, and corresponds to a pseudo-field of 11.36 T. Our work provides a new way to study quantum Hall phases induced by strain in 2D materials and heterostructures. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Neutral Silicon Vacancy Centers in Diamond via Photoactivated Itinerant Carriers

Authors: Zi-Huai Zhang, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Nathalie P. de Leon

Abstract: Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of SiV0 centers requires careful Fermi level engineering of the diamond host material, making further technological development challenging. Here, we show that SiV0 centers can be efficiently stabi… ▽ More Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum network applications because of their exceptional optical properties and spin coherence. However, the stabilization of SiV0 centers requires careful Fermi level engineering of the diamond host material, making further technological development challenging. Here, we show that SiV0 centers can be efficiently stabilized by photoactivated itinerant carriers. Even in this nonequilibrium configuration, the resulting SiV0 centers are stable enough to allow for resonant optical excitation and optically detected magnetic resonance. Our results pave the way for on-demand generation of SiV0 centers as well as other emerging quantum defects in diamond. △ Less

Submitted 18 September, 2022; originally announced September 2022.

Dark quantum droplets and solitary waves in beyond-mean-field Bose-Einstein condensate mixtures

Authors: Matthew Edmonds

Abstract: Quantum liquid-like states of matter have been realized in an ongoing series of experiments with ultracold Bose gases. Using a combination of analytical and numerical methods we identify the specific criteria for the existence of dark solitons in beyond-mean-field binary condensates, revealing how these excitations exist for both repulsive and attractive interactions, the latter leading to dark qu… ▽ More Quantum liquid-like states of matter have been realized in an ongoing series of experiments with ultracold Bose gases. Using a combination of analytical and numerical methods we identify the specific criteria for the existence of dark solitons in beyond-mean-field binary condensates, revealing how these excitations exist for both repulsive and attractive interactions, the latter leading to dark quantum droplets with properties intermediate between a dark soliton and a quantum droplet. The phenomenology of the these excitations are explored within the full parameter space of the model, revealing the novel spatial profile of the excitation that differs significantly from the Zakharov-Shabat (ZS) soliton; leading to a negative effective mass that is enhanced in the presence of the quantum fluctuations. Finally the dynamics of pairs of the excitations are explored, showing non-integrable dynamics and dark soliton bound-states in the attractive regime. △ Less

Submitted 4 April, 2023; v1 submitted 1 September, 2022; originally announced September 2022.

Comments: 12 pages, 6 figures. To appear in Phys. Rev. Research

Journal ref: Phys. Rev. Research 5, 023175 (2023)

Increased Phase Coherence Length in a Porous Topological Insulator

Authors: Alex Nguyen, Golrokh Akhgar, David L. Cortie, Abdulhakim Bake, Zeljko Pastuovic, Weiyao Zhao, Chang Liu, Yi-Hsun Chen, Kiyonori Suzuki, Michael S. Fuhrer, Dimitrie Culcer, Alexander R. Hamilton, Mark T. Edmonds, Julie Karel

Abstract: The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocaliza… ▽ More The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics. △ Less

Submitted 21 May, 2022; originally announced May 2022.

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Authors: Michael S. Fuhrer, Mark T. Edmonds, Dimitrie Culcer, Muhammad Nadeem, Xiaolin Wang, Nikhil Medhekar, Yuefeng Yin, Jared H Cole

Abstract: A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we p… ▽ More A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed. △ Less

Submitted 13 January, 2022; originally announced January 2022.

Comments: Accepted version of paper number 38-2 presented at the 67th Annual IEEE International Electron Devices Meeting (IEDM) on 15 December 2021

Formation of a stable surface oxide in MnBi$_2$Te$_4$ thin films

Authors: Golrokh Akhgar, Qile Li, Iolanda Di Bernardo, Chi Xuan Trang, Chang Liu, Julie Karel, Anton Tadich, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Understanding the air-stability of MnBi$_2$Te$_4$ thin films is crucial for the development and long-term operation of electronic devices based around magnetic topological insulators. In the present work, we study MnBi$_2$Te$_4$ thin films upon exposure to atmosphere using a combination of synchrotron-based photoelectron spectroscopy, room temperature electrical transport and atomic force microsco… ▽ More Understanding the air-stability of MnBi$_2$Te$_4$ thin films is crucial for the development and long-term operation of electronic devices based around magnetic topological insulators. In the present work, we study MnBi$_2$Te$_4$ thin films upon exposure to atmosphere using a combination of synchrotron-based photoelectron spectroscopy, room temperature electrical transport and atomic force microscopy to determine the oxidation process. After 2 days air exposure a 2 nm thick oxide passivates the surface, corresponding to oxidation of only the top two surface layers, with the underlying layers preserved. This protective oxide layer results in samples that still exhibit metallic conduction even after several days air exposure. Furthermore, the work function decreases from 4.4 eV for pristine MnBi$_2$Te$_4$ to 4.0 eV after the formation of the oxide, along with only a small shift in the core levels indicating minimal do** as a result of air exposure. With the oxide confined to the top surface layers, and the underlying layers preserved, it may be possible to explore new avenues in how to handle, prepare and passivate future MnBi$_2$Te$_4$ devices. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Journal ref: ACS Appl. Mater. Interfaces 2022, 14, 4, 6102-6108

Unidirectional magneto-transport of linearly dispersing topological edge states

Authors: Zhanning Wang, Pankaj Bhalla, Mark Edmonds, Michael S. Fuhrer, Dimitrie Culcer

Abstract: Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample, where charge puddles with odd spin cause back-scattering, a magnetic field drastically increases the mean free path and drives the system into the ballistic regime with a Landauer-Buttiker conductance. A strong non-line… ▽ More Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample, where charge puddles with odd spin cause back-scattering, a magnetic field drastically increases the mean free path and drives the system into the ballistic regime with a Landauer-Buttiker conductance. A strong non-linear non-reciprocal current emerges in the diffusive regime with opposite signs on each edge, and vanishes in the ballistic limit. We discuss its detection in state-of-the-art experiments. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Comments: 4 pages, 4 figures, Accepted for publication in Phys. Rev. B Rapid Communications

Journal ref: Phys. Rev. B 104, L081406 (2021)

Few-to-many vortex states of density-angular-momentum coupled Bose-Einstein condensates

Authors: Matthew Edmonds

Abstract: Motivated by recent experiments, we theoretically study a gas of atomic bosons confined in an elliptical harmonic trap; forming a quasi-two-dimensional atomic Bose-Einstein condensate subject to a density-dependent gauge potential which realises an effective density-angular-momentum coupling. We present exact Thomas-Fermi solutions which allows us to identify the stable regimes of the full paramet… ▽ More Motivated by recent experiments, we theoretically study a gas of atomic bosons confined in an elliptical harmonic trap; forming a quasi-two-dimensional atomic Bose-Einstein condensate subject to a density-dependent gauge potential which realises an effective density-angular-momentum coupling. We present exact Thomas-Fermi solutions which allows us to identify the stable regimes of the full parameter space of the model. Accompanying numerical simulations reveal the effect of the interplay of the rigid body and density-angular-momentum coupling for the elliptically confined condensate. By varying the strength of the gauge potential and trap anisotropy we explore how the superfluid state emerges in different experimentally accessible geometries, while for large rotation strengths dense vortex lattices and concentric vortex ring arrangements are obtained. △ Less

Submitted 30 September, 2021; v1 submitted 21 May, 2021; originally announced May 2021.

Comments: 15 pages, 8 figures

Journal ref: Phys. Rev. A 104, 043310 (2021)

Large bandgap quantum anomalous hall insulator in a designer ferromagnet-topological insulator-ferromagnet heterostructure

Authors: Qile Li, Chi Xuan Trang, Weikang Wu, **woong Hwang, Nikhil Medhekar, Sung-Kwan Mo, Shengyuan A. Yang, Mark T Edmonds

Abstract: Combining magnetism and nontrivial band topology gives rise to quantum anomalous Hall (QAH) insulators and exotic quantum phases such as the QAH effect where current flows without dissipation along quantized edge states. Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway towards achieving QAH effect at high temperature for lossless tra… ▽ More Combining magnetism and nontrivial band topology gives rise to quantum anomalous Hall (QAH) insulators and exotic quantum phases such as the QAH effect where current flows without dissipation along quantized edge states. Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway towards achieving QAH effect at high temperature for lossless transport applications. One promising architecture involves a sandwich structure comprising two single layers of MnBi2Te4 (a 2D ferromagnetic insulator) with ultra-thin Bi2Te3 in the middle, and is predicted to yield a robust QAH insulator phase with a bandgap well above thermal energy at room temperature (25 meV). Here we demonstrate the growth of a 1SL MnBi2Te4 / 4QL Bi2Te3 /1SL MnBi2Te4 heterostructure via molecular beam epitaxy, and probe the electronic structure using angle resolved photoelectron spectroscopy. We observe strong hexagonally warped massive Dirac Fermions and a bandgap of 75 meV. The magnetic origin of the gap is confirmed by the observation of broken time reversal symmetry and the exchange-Rashba effect, in excellent agreement with density functional theory calculations. These findings provide insights into magnetic proximity effects in topological insulators, that will move lossless transport in topological insulators towards higher temperature. △ Less

Submitted 18 May, 2021; originally announced May 2021.

Comments: 24 pages

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Authors: Semonti Bhattacharyya, Golrokh Akhgar, Matt Gebert, Julie Karel, Mark T Edmonds, Michael S Fuhrer

Abstract: Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electron… ▽ More Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Comments: Review article, 30 pages including references, 11 figures

Journal ref: Advanced materials , 2021, Vol.33(33), p.2170262

Synthetic superfluid chemistry with vortex-trapped quantum impurities

Authors: Matthew Edmonds, Minoru Eto, Muneto Nitta

Abstract: We explore the effect of using two-dimensional matter-wave vortices to confine an ensemble of bosonic quantum impurities. This is modelled theoretically using a mass-imbalanced homogeneous two component Gross-Pitaevskii equation where each component has independent atom numbers and equal atomic masses. By changing the mass imbalance of our system we find the shape of the vortices are deformed even… ▽ More We explore the effect of using two-dimensional matter-wave vortices to confine an ensemble of bosonic quantum impurities. This is modelled theoretically using a mass-imbalanced homogeneous two component Gross-Pitaevskii equation where each component has independent atom numbers and equal atomic masses. By changing the mass imbalance of our system we find the shape of the vortices are deformed even at modest imbalances, leading to barrel shaped vortices; which we quantify using a multi-component variational approach. The energy of impurity carrying vortex pairs are computed, revealing a mass-dependent energy splitting. We then compute the excited states of the impurity, which we in turn use to construct `covalent bonds' for vortex pairs. Our work opens a new route to simulating synthetic chemical reactions with superfluid systems. △ Less

Submitted 22 March, 2021; v1 submitted 27 October, 2020; originally announced October 2020.

Comments: 17 pages, 11 figures. Phys. Rev. Research (in press)

Journal ref: Phys. Rev. Research 3, 023085 (2021)

Crossover from 2D ferromagnetic insulator to wide bandgap quantum anomalous Hall insulator in ultra-thin MnBi2Te4

Authors: Chi Xuan Trang, Qile Li, Yuefeng Yin, **woong Hwang, Golrokh Akhgar, Iolanda Di Bernardo, Antonija Grubišić-Čabo, Anton Tadich, Michael S. Fuhrer, Sung- Kwan Mo, Nikhil Medhekar, Mark T. Edmonds

Abstract: Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature o… ▽ More Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature of bulk MnBi2Te4, and measurement of the magnetic energy gap at the Dirac point in ultra-thin MnBi2Te4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verifying whether the gap is magnetic in the QAH phase. Here we utilise temperature dependent angle-resolved photoemission spectroscopy to study epitaxial ultra-thin MnBi2Te4. We directly observe a layer dependent crossover from a 2D ferromagnetic insulator with a bandgap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>100 meV) at 8 K in 3 and 5 SL MnBi2Te4. The QAH gap is confirmed to be magnetic in origin, as it abruptly diminishes with increasing temperature above 8 K. The direct observation of a large magnetic energy gap in the QAH phase of few-SL MnBi2Te4 is promising for further increasing the operating temperature of QAH materials. △ Less

Submitted 16 March, 2021; v1 submitted 13 September, 2020; originally announced September 2020.

Journal ref: ACS Nano 2021, 15, 8, 13444-13452

Progress in epitaxial thin-film Na3Bi as a topological electronic material

Authors: I. Di Bernardo, J. Hellerstedt, C. Liu, G. Akhgar, W. Wu, S. A. Yang, D. Culcer, S. -K. Mo, S. Adam, M. T. Edmonds, M. S. Fuhrer

Abstract: Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising to… ▽ More Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising topological electronic devices such as topological transistors. In this review, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesised via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semi-classical and quantum transport phenomena in different do** regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field driven topological phase transitions, are addressed, with an outlook towards current challenges and expected future progress. △ Less

Submitted 1 September, 2020; originally announced September 2020.

Importance of interactions for the band structure of the topological Dirac semimetal Na3Bi

Authors: I. Di Bernardo, J. Collins, W. Wu, J. Zhou, S. A. Yang, S. Ju, M. T. Edmonds, M. S. Fuhrer

Abstract: We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than pr… ▽ More We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than previous theoreticalpredictions. We compare the experimental band dispersions to the theoretical band structures calculated usingan increasing hierarchy of approximations of self-energy corrections due to interactions: generalized gradientapproximation (GGA), meta-GGA, Heyd-Scuseria-Ernzerhof exchange-correlation functional (HSE06), and GW methods. We find that density functional theory methods generally underestimate the electron velocities. However, we find significantly improved agreement with an increasingly sophisticated description of the exchange and interaction potential, culminating in reasonable agreement with experiments obtained by the GW method. The results indicate that exchange-correlation effects are important in determining the electronicstructure of this Na3Bi, and are likely the origin of the high velocity. The electron velocity is consistent withrecent experiments on ultrathin Na3Bi and also may explain the ultrahigh carrier mobility observed in heavilyelectron-doped Na3Bi. △ Less

Submitted 14 July, 2020; originally announced July 2020.

Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, Iolanda di Bernardo, Kevin M. Daniels, John Riley, Eric Huwald, Mark T. Edmonds, Rachael Myers-Ward, Nikhil V. Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-do** and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesiu… ▽ More We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-do** and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type do** of 2.1 $\times$ 10$^{14}$ cm$^{-2}$, creates an extremely high displacement field of 2.6 V/nm, opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar do** level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 minutes exposure in air. △ Less

Submitted 27 August, 2020; v1 submitted 6 May, 2020; originally announced May 2020.

Comments: 46 pages including supporting information, 4 figures in the main paper and 9 figures in the supporting information

Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states

Authors: Zi-Huai Zhang, Paul Stevenson, Gergo Thiering, Brendon C. Rose, Ding Huang, Andrew M. Edmonds, Matthew L. Markham, Stephen A. Lyon, Adam Gali, Nathalie P. de Leon

Abstract: Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detecte… ▽ More Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems. △ Less

Submitted 29 December, 2020; v1 submitted 26 April, 2020; originally announced April 2020.

Journal ref: Physical Review Letters 125, 237402 (2020)

Generation of nitrogen-vacancy ensembles in diamond for quantum sensors: Optimization and scalability of CVD processes

Authors: Andrew M. Edmonds, Connor A. Hart, Matthew J. Turner, Pierre-Olivier Colard, Jennifer M. Schloss, Kevin Olsson, Raisa Trubko, Matthew L. Markham, Adam Rathmill, Ben Horne-Smith, Wilbur Lew, Arul Manickam, Scott Bruce, Peter G. Kaup, Jon C. Russo, Michael J. DiMario, Joseph T. South, Jay T. Hansen, Daniel J. Twitchen, Ronald L. Walsworth

Abstract: Ensembles of nitrogen-vacancy (NV) centers in diamond are a leading platform for practical quantum sensors. Reproducible and scalable fabrication of NV-ensembles with desired properties is crucial. This work addresses these challenges by develo** a chemical vapor deposition (CVD) synthesis process to produce diamond material at scale with improved NV-ensemble properties for a target NV density.… ▽ More Ensembles of nitrogen-vacancy (NV) centers in diamond are a leading platform for practical quantum sensors. Reproducible and scalable fabrication of NV-ensembles with desired properties is crucial. This work addresses these challenges by develo** a chemical vapor deposition (CVD) synthesis process to produce diamond material at scale with improved NV-ensemble properties for a target NV density. The material reported in this work enables immediate sensitivity improvements for current devices. In addition, techniques established in this work for material and sensor characterization at different stages of the CVD synthesis process provide metrics for future efforts targeting other NV densities or sample geometries. △ Less

Submitted 3 April, 2020; originally announced April 2020.

Comments: 16 pages, 10 figures, 5 tables

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

Authors: Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin, Anton Tadich, Rachael L. Myers-Ward, Matthew Dejarld, Shojan P. Pavunny, Marc Currie, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Nikhil V. Medhekar, D. Kurt Gaskill, Amadeo L. Vazquez de Parga, Michael S. Fuhrer

Abstract: The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy… ▽ More The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type do**. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable. △ Less

Submitted 13 July, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Comments: 58 pages, 10 figures, 4 tables. Revised text and figures

Quantum Transport in Air-stable Na3Bi Thin Films

Authors: Chang Liu, Golrokh Akhgar, James L. Collins, Jack Hellerstedt, Shaffique Adam, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films pas… ▽ More Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) cap** layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure. △ Less

Submitted 29 March, 2020; originally announced March 2020.

Journal ref: ACS Appl. Mater. Interfaces 12, 31, 35542 (2020)

Vortex patterns of atomic Bose-Einstein condensates in a density-dependent gauge potential

Authors: Matthew Edmonds, Muneto Nitta

Abstract: We theoretically examine the vortex states of a gas of trapped quasi-two-dimensional ultracold bosons subject to a density-dependent gauge potential, realizing an effective nonlinear rotation of the atomic condensate, which we also show is within the reach of current experimental techniques with ultracold atom experiments. The nonlinear rotation has a two-fold effect; as well as distorting the sha… ▽ More We theoretically examine the vortex states of a gas of trapped quasi-two-dimensional ultracold bosons subject to a density-dependent gauge potential, realizing an effective nonlinear rotation of the atomic condensate, which we also show is within the reach of current experimental techniques with ultracold atom experiments. The nonlinear rotation has a two-fold effect; as well as distorting the shape of the condensate it also leads to an inhomogeneous vorticity resulting in novel morphological and topological states, including ring vortex arrangements that do not follow the standard Abrikosov result. The dynamics of trapped vortices are also explored, which differs from the case of rigid-body rotation due to the absence of a global laboratory reference frame. △ Less

Submitted 29 July, 2020; v1 submitted 21 February, 2020; originally announced February 2020.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. A 102, 011303(R) (2020)

Quantum droplets of quasi-one-dimensional dipolar Bose-Einstein condensates

Authors: Matthew Edmonds, Thomas Bland, Nick G. Parker

Abstract: Ultracold dipolar droplets have been realized in a series of ground-breaking experiments, where the stability of the droplet state is attributed to beyond-mean-field effects in the form of the celebrated Lee-Huang-Yang (LHY) correction. We scrutinize the dipolar droplet states in a one-dimensional context using a combination of analytical and numerical approaches, and identify experimentally viabl… ▽ More Ultracold dipolar droplets have been realized in a series of ground-breaking experiments, where the stability of the droplet state is attributed to beyond-mean-field effects in the form of the celebrated Lee-Huang-Yang (LHY) correction. We scrutinize the dipolar droplet states in a one-dimensional context using a combination of analytical and numerical approaches, and identify experimentally viable parameters for accessing our findings for future experiments. In particular we identify regimes of stability in the restricted geometry, finding multiple roton instabilities as well as regions supporting quasi-one-dimensional droplet states. By applying an interaction quench to the droplet, a modulational instability is induced and multiple droplets are produced, along with bright solitons and atomic radiation. We also assess the droplets robustness to collisions, revealing population transfer and droplet fission. △ Less

Submitted 19 November, 2020; v1 submitted 18 February, 2020; originally announced February 2020.

Comments: Expanded and revised version, J. Phys. Commun. in press

Journal ref: J. Phys. Commun. 4 125008 (2020)

Electronic bandstructure of in-plane ferroelectric van der Waals $β'-In_{2}Se_{3}$

Authors: James L. Collins, Chutian Wang, Anton Tadich, Yuefeng Yin, Changxi Zheng, Jack Hellerstedt, Antonija Grubišić-Čabo, Shujie Tang, Sung-Kwan Mo, John Riley, Eric Huwald, Nikhil V. Medhekar, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β'-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT,… ▽ More Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β'-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT, we find the band structure is highly two-dimensional, with negligible dispersion along the c-axis. Due to n-type do** we are able to observe the conduction band minima, and directly measure the minimum indirect (0.97 eV) and direct (1.46 eV) bandgaps. We find the Fermi surface in the conduction band is characterized by anisotropic electron pockets with sharp in-plane dispersion about the $\overline{M}$ points, yielding effective masses of 0.21 $m_{0}$ along $\overline{KM}$ and 0.33 $m_{0}$ along $\overline{ΓM}$. The measured band structure is well supported by hybrid density functional theory calculations. The highly two-dimensional (2D) bandstructure with moderate bandgap and small effective mass suggest that $β'-In_{2}Se_{3}$ is a potentially useful new van der Waals semiconductor. This together with its ferroelectricity makes it a viable material for high-mobility ferroelectric-photovoltaic devices, with applications in non-volatile memory switching and renewable energy technologies. △ Less

Submitted 17 February, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 19 pages, 4 + 1 figures; typos corrected;added references; updated figures & discussion to reflect changes in model

Signatures of Helical Edge Transport in Millimetre-Scale Thin Films of Na3Bi

Authors: Chang Liu, Dimitrie Culcer, Mark T. Edmonds, Michael S. Fuhrer

Abstract: A two-dimensional topological insulator (2DTI) has an insulating bulk and helical spin-polarised edge modes robust to backscattering by non-magnetic disorder. While ballistic transport has been demonstrated in 2DTIs over short distances, larger samples show significant backscattering and a nearly temperature-independent resistance whose origin is unclear. 2DTI edges have shown a spin polarisation,… ▽ More A two-dimensional topological insulator (2DTI) has an insulating bulk and helical spin-polarised edge modes robust to backscattering by non-magnetic disorder. While ballistic transport has been demonstrated in 2DTIs over short distances, larger samples show significant backscattering and a nearly temperature-independent resistance whose origin is unclear. 2DTI edges have shown a spin polarisation, however the degree of helicity is difficult to quantify from spin measurements. Here, we study 2DTI few-layer Na3Bi on insulating Al2O3. A non-local conductance measurement geometry enables sensitive detection of the edge conductance in the topological regime, with an edge mean free path ~100 nm. Magnetic field suppresses spin-flip scattering in the helical edges, resulting in a giant negative magnetoresistance (GNMR), up to 80% at 0.9 T. Comparison to theory indicates >98% of scattering is helical spin scattering significantly exceeding the maximum (67%) expected for a non-helical metal. GNMR, coupled with non-local measurements demonstrating edge conduction, thus provides an unambiguous experimental signature of helical edges that we expect to be generically useful in understanding 2DTIs. △ Less

Submitted 15 September, 2019; v1 submitted 4 June, 2019; originally announced June 2019.

Journal ref: Nano Lett. 20, 9, 6306 (2020)

Coherent Impurity Transport in an Attractive Binary Bose-Einstein condensate

Authors: M. J. Edmonds, J. L. Helm, Th. Busch

Abstract: We study the dynamics of a soliton-impurity system modeled in terms of a binary Bose-Einstein condensate. This is achieved by `switching off' one of the two self-interaction scattering lengths, giving a two component system where the second component is trapped entirely by the presence of the first component. It is shown that this system possesses rich dynamics, including the identification of unu… ▽ More We study the dynamics of a soliton-impurity system modeled in terms of a binary Bose-Einstein condensate. This is achieved by `switching off' one of the two self-interaction scattering lengths, giving a two component system where the second component is trapped entirely by the presence of the first component. It is shown that this system possesses rich dynamics, including the identification of unusual `weak' dimers that appear close to the zero inter-component scattering length. It is further found that this system supports quasi-stable trimers in regimes where the equivalent single-component gas does not, which is attributed to the presence of the impurity atoms which can dynamically tunnel between the solitons, and maintain the required phase differences that support the trimer state. △ Less

Submitted 10 May, 2019; v1 submitted 19 October, 2018; originally announced October 2018.

Comments: 14 pages, 8 figures

Journal ref: New J. Phys. 21, 053019 (2019)

Noise-Free Generation of Bright Matter-Wave Solitons

Authors: M. J. Edmonds, T. P. Billam, S. A. Gardiner, Th. Busch

Abstract: We show how access to sufficiently flexible trap** potentials could be exploited in the generation of three-dimensional atomic bright matter-wave solitons. Our proposal provides a route towards producing bright solitonic states with good fidelity, in contrast to, for example, a non-adiabatic swee** of an applied magnetic field through a Feshbach resonance. We show how access to sufficiently flexible trap** potentials could be exploited in the generation of three-dimensional atomic bright matter-wave solitons. Our proposal provides a route towards producing bright solitonic states with good fidelity, in contrast to, for example, a non-adiabatic swee** of an applied magnetic field through a Feshbach resonance. △ Less

Submitted 11 January, 2019; v1 submitted 13 September, 2018; originally announced September 2018.

Comments: 7 pages, 5 figures

Journal ref: Phys. Rev. A 98, 063626 (2018)

Electric Field-Tuned Topological Phase Transition in Ultra-Thin Na3Bi - Towards a Topological Transistor

Authors: James L. Collins, Anton Tadich, Weikang Wu, Lidia C. Gomes, Joao N. B. Rodrigues, Chang Liu, Jack Hellerstedt, Hye** Ryu, Shujie Tang, Sung-Kwan Mo, Shaffique Adam, Shengyuan A. Yang, Michael. S. Fuhrer, Mark T. Edmonds

Abstract: The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charge and spin along dissipationless edges of the two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a conventional insulator with… ▽ More The electric field induced quantum phase transition from topological to conventional insulator has been proposed as the basis of a topological field effect transistor [1-4]. In this scheme an electric field can switch 'on' the ballistic flow of charge and spin along dissipationless edges of the two-dimensional (2D) quantum spin Hall insulator [5-9], and when 'off' is a conventional insulator with no conductive channels. Such as topological transistor is promising for low-energy logic circuits [4], which would necessitate electric field-switched materials with conventional and topological bandgaps much greater than room temperature, significantly greater than proposed to date [6-8]. Topological Dirac semimetals(TDS) are promising systems in which to look for topological field-effect switching, as they lie at the boundary between conventional and topological phases [3,10-16]. Here we use scanning probe microscopy/spectroscopy (STM/STS) and angle-resolved photoelectron spectroscopy (ARPES) to show that mono- and bilayer films of TDS Na3Bi [3,17] are 2D topological insulators with bulk bandgaps >400 meV in the absence of electric field. Upon application of electric field by do** with potassium or by close approach of the STM tip, the bandgap can be completely closed then re-opened with conventional gap greater than 100 meV. The large bandgaps in both the conventional and quantum spin Hall phases, much greater than the thermal energy kT = 25 meV at room temperature, suggest that ultrathin Na3Bi is suitable for room temperature topological transistor operation. △ Less

Submitted 4 February, 2019; v1 submitted 21 May, 2018; originally announced May 2018.

Journal ref: Nature 564, 390 (2018)

Strongly Anisotropic Spin Relaxation in the Neutral Silicon Vacancy Center in Diamond

Authors: Brendon C. Rose, Gergo Thiering, Alexei M. Tyryshkin, Andrew M. Edmonds, Matthew L. Markham, Adam Gali, Stephen A. Lyon, Nathalie P. de Leon

Abstract: Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is str… ▽ More Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is strongly anisotropic with respect to magnetic field orientation. As the angle of the magnetic field is rotated relative to the symmetry axis of the defect, T1 is reduced by over three orders of magnitude. The electron spin coherence time (T2) follows the same temperature dependence but is drastically shorter than T1. We propose that these observations result from phonon-mediated transitions to a low lying excited state that are spin conserving when the magnetic field is aligned with the defect axis, and we discuss likely candidates for this excited state. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 98, 235140 (2018)

Non-integrable dynamics of matter-wave solitons in a density-dependent gauge theory

Authors: R. J. Dingwall, M. J. Edmonds, J. L. Helm, B. A. Malomed, P. Öhberg

Abstract: We study interactions between bright matter-wave solitons which acquire chiral transport dynamics due to an optically-induced density-dependent gauge potential. Through numerical simulations, we find that the collision dynamics feature several non-integrable phenomena, from inelastic collisions including population transfer and radiation losses to short-lived bound states and soliton fission. An e… ▽ More We study interactions between bright matter-wave solitons which acquire chiral transport dynamics due to an optically-induced density-dependent gauge potential. Through numerical simulations, we find that the collision dynamics feature several non-integrable phenomena, from inelastic collisions including population transfer and radiation losses to short-lived bound states and soliton fission. An effective quasi-particle model for the interaction between the solitons is derived by means of a variational approximation, which demonstrates that the inelastic nature of the collision arises from a coupling of the gauge field to velocities of the solitons. In addition, we derive a set of interaction potentials which show that the influence of the gauge field appears as a short-range potential, that can give rise to both attractive and repulsive interactions. △ Less

Submitted 22 February, 2018; v1 submitted 23 September, 2017; originally announced September 2017.

Comments: Updated with minor corrections and additional references. To be published in New J. Phys

Temperature Dependent n-p Transition of 3 Dimensional Dirac Semimetal Na$_3$Bi Thin Film

Authors: Chang Liu, Jack Hellerstedt, Mark T. Edmonds, Michael S. Fuhrer

Abstract: We study the temperature dependence ($77$ K - $475$ K) of the longitudinal resistivity and Hall coefficient of thin films (thickness $20$ nm) of three dimensional topological Dirac semimetal Na$_3$Bi grown via molecular beam epitaxy (MBE). The temperature-dependent Hall coefficient is electron-like at low temperature, but transitions to hole-like transport around $200$ K. We develop a model of a D… ▽ More We study the temperature dependence ($77$ K - $475$ K) of the longitudinal resistivity and Hall coefficient of thin films (thickness $20$ nm) of three dimensional topological Dirac semimetal Na$_3$Bi grown via molecular beam epitaxy (MBE). The temperature-dependent Hall coefficient is electron-like at low temperature, but transitions to hole-like transport around $200$ K. We develop a model of a Dirac band with electron-hole asymmetry in Fermi velocity and mobility (assumed proportional to the square of Fermi velocity) which explains well the magnitude and temperature dependence of the Hall resistivity. We find that the hole mobility is about $7$ times larger than the electron mobility. In addition, we find that the electron mobility decreases significantly with increasing temperature, suggesting electron-phonon scattering strongly limits the room temperature mobility. △ Less

Submitted 4 September, 2017; originally announced September 2017.

Comments: 12 pages

Journal ref: Phys. Rev. B 96, 235412 (2017)

Electrostatic Modulation of the Electronic Properties of Dirac Semimetal Na3Bi

Authors: Jack Hellerstedt, Indra Yudhistira, Mark T. Edmonds, Chang Liu, James Collins, Shaffique Adam, Michael S. Fuhrer

Abstract: Large-area thin films of topological Dirac semimetal Na$_3$Bi are grown on amorphous SiO$_2$:Si substrates to realise a field-effect transistor with the doped Si acting as back gate. As-grown films show charge carrier mobilities exceeding 7,000 cm$^2$/Vs and carrier densities below 3 $\times $10$^{18}$ cm$^{-3}$, comparable to the best thin-film Na$_3$Bi. An ambipolar field effect and minimum cond… ▽ More Large-area thin films of topological Dirac semimetal Na$_3$Bi are grown on amorphous SiO$_2$:Si substrates to realise a field-effect transistor with the doped Si acting as back gate. As-grown films show charge carrier mobilities exceeding 7,000 cm$^2$/Vs and carrier densities below 3 $\times $10$^{18}$ cm$^{-3}$, comparable to the best thin-film Na$_3$Bi. An ambipolar field effect and minimum conductivity are observed, characteristic of Dirac electronic systems. The results are quantitatively understood within a model of disorder-induced charge inhomogeneity in topological Dirac semimetals. Due to the inverted band structure, the hole mobility is significantly larger than the electron mobility in Na$_3$Bi, and when present, these holes dominate the transport properties. △ Less

Submitted 6 August, 2017; v1 submitted 28 July, 2017; originally announced July 2017.

Comments: 5 pages, 4 figures; minor corrections and revisions for readability

Journal ref: Phys. Rev. Materials 1, 054203 (2017)

Observation of Effective Pseudospin Scattering in ZrSiS

Authors: Michael S. Lodge, Guoqing Chang, Cheng-Yi Huang, Bahadur Singh, Jack Hellerstedt, Mark Edmonds, Dariusz Kaczorowski, Md Mofazzel Hosen, Madhab Neupane, Hsin Lin, Michael S. Fuhrer, Bent Weber, Masa Ishigami

Abstract: 3D Dirac semimetals are an emerging class of materials that possess topological electronic states with a Dirac dispersion in their bulk. In nodal-line Dirac semimetals, the conductance and valence bands connect along a closed path in momentum space, leading to the prediction of pseudospin vortex rings and pseudospin skyrmions. Here, we use Fourier transform scanning tunneling spectroscopy (FT-STS)… ▽ More 3D Dirac semimetals are an emerging class of materials that possess topological electronic states with a Dirac dispersion in their bulk. In nodal-line Dirac semimetals, the conductance and valence bands connect along a closed path in momentum space, leading to the prediction of pseudospin vortex rings and pseudospin skyrmions. Here, we use Fourier transform scanning tunneling spectroscopy (FT-STS) at 4.5 K to resolve quasiparticle interference (QPI) patterns at single defect centers on the surface of the line nodal semimetal zirconium silicon sulfide (ZrSiS). Our QPI measurements show pseudospin conservation at energies close to the line node. In addition, we determine the Fermi velocity to be $\hbar v_F = 2.65 \pm 0.10$ eV Å in the Γ-M direction ~300 meV above the Fermi energy $E_F$, and the line node to be ~140 meV above $E_F$. More importantly, we find that certain scatterers can introduce energy-dependent non-preservation of pseudospins, giving rise to effective scattering between states with opposite valley pseudospin deep inside valence and conduction bands. Further investigations of quasiparticle interference at the atomic level will aid defect engineering at the synthesis level, needed for the development of lower-power electronics via dissipationless electronic transport in the future. △ Less

Submitted 9 November, 2017; v1 submitted 16 June, 2017; originally announced June 2017.

Journal ref: Nano Letters (2017)

Observation of an environmentally insensitive solid state spin defect in diamond

Authors: Brendon C. Rose, Ding Huang, Zi-Huai Zhang, Alexei M. Tyryshkin, Sorawis Sangtawesin, Srikanth Srinivasan, Lorne Loudin, Matthew L. Markham, Andrew M. Edmonds, Daniel J. Twitchen, Stephen A. Lyon, Nathalie P. de Leon

Abstract: Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the opt… ▽ More Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the optical transition frequency over time. We report a novel color center with insensitivity to both of these sources of environmental decoherence: the neutral charge state of silicon vacancy (SiV0). Through careful material engineering, we achieve over 80% conversion of implanted silicon to SiV0. SiV0 exhibits excellent spin properties, with spin-lattice relaxation times (T1) approaching one minute and coherence times (T2) approaching one second, as well as excellent optical properties, with approximately 90% of its emission into the zero-phonon line and near-transform limited optical linewidths. These combined properties make SiV0 a promising defect for quantum networks. △ Less

Submitted 5 June, 2017; originally announced June 2017.