Showing 1–22 of 22 results for author: Dudy, L

Anomalous 4$f$ fine structure in TmSe$_{1-x}$Te$_x$ across the metal-insulator transition

Authors: C. -H. Min, S. Müller, W. J. Choi, L. Dudy, V. Zabolotny, M. Heber, J. D. Denlinger, C. -J. Kang, M. Kalläne, N. Wind, M. Scholz, T. L. Lee, C. Schlueter, A. Gloskovskii, E. D. L. Rienks, V. Hinkov, H. Bentmann, Y. S. Kwon, F. Reinert, K. Rossnagel

Abstract: Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence syste… ▽ More Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence systems. We investigate the 4$f$ states in TmSe$_{1-x}$Te$_x$ throughout a semimetal-insulator phase transition, which drastically varies the interactions related to the 4$f$ states. Using synchrotron-based hard x-ray and extreme ultraviolet photoemission spectroscopy, we resolve subtle peak splitting in the 4$f$ peaks near the Fermi level in the mixed-valent semimetal phase. The separation is enhanced by several tens of meV by increasing the lattice parameter by a few percent. Our results elucidate the evolving nature of the 4$f$ state across the phase transition, and provide direct experimental evidence for electronic interactions beyond the standard Anderson model in mixed-valence systems. △ Less

Submitted 4 June, 2024; originally announced June 2024.

Comments: 5 pages, 4 figures for the main text, 6 pages and 5 figures for the supplementary

ARPES in strongly disordered systems -- theory of electronic bands melting

Authors: Piotr Chudzinski, Lenart Dudy

Abstract: It is well known that translational symmetry-breaking disorder will disrupt ARPES spectra up to the point where they become invisible. However, a theoretical framework to capture this phenomenon has been largely missing. Here, based on a rigorous theory of the ARPES process, we provide this much-needed framework. In particular, we show how the frequently used sudden electron approximation has to b… ▽ More It is well known that translational symmetry-breaking disorder will disrupt ARPES spectra up to the point where they become invisible. However, a theoretical framework to capture this phenomenon has been largely missing. Here, based on a rigorous theory of the ARPES process, we provide this much-needed framework. In particular, we show how the frequently used sudden electron approximation has to be modified in this situation. Our main result is an argument that links the photoemission line broadening with an operator content of a disorder operator and so with the criticality of the corresponding order-disorder phase transition. For concreteness, we focus here on the frustrated 2D trigonal (pseudo-)spin model, with Ising order-disorder operators behind the transition. Still, our formalism is general and can be applied in a much broader context. △ Less

Submitted 25 March, 2022; originally announced March 2022.

Temperature dependent ARPES of the metallic-like bands in Si(553)-Au

Authors: Lenart Dudy, Julian Aulbach, Jörg Schäfer, Ralph Claessen, Victor Rogalev, Piotr Chudzinski

Abstract: We conducted a thorough investigation into the temperature dependence of the metallic-like bands of Si(553)-Au using angular-resolved photoemission spectroscopy (ARPES). Our study addresses the challenges posed by the short-term stability of the surface and photo-voltage effects, which we overcame to extract changes in the band-filling and Fermi-velocity. Our findings shed light on the low-tempera… ▽ More We conducted a thorough investigation into the temperature dependence of the metallic-like bands of Si(553)-Au using angular-resolved photoemission spectroscopy (ARPES). Our study addresses the challenges posed by the short-term stability of the surface and photo-voltage effects, which we overcame to extract changes in the band-filling and Fermi-velocity. Our findings shed light on the low-temperature phase of the step edge in Si(553)-Au, which has been a topic of ongoing debate regarding its structural or electronic nature. Through comparison with theoretical predictions of a structural-related low-temperature to high-temperature phase transition, we discovered that the band-filling and Fermi-velocity do not change accordingly, thereby ruling out this scenario. Our study contributes to a better understanding of this material system and provides an important reference for future research. △ Less

Submitted 14 June, 2023; v1 submitted 25 March, 2022; originally announced March 2022.

Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen

Authors: Judith Gabel, Matthias Pickem, Philipp Scheiderer, Lenart Dudy, Berengar Leikert, Marius Fuchs, Martin Stübinger, Matthias Schmitt, Julia Küspert, Giorgio Sangiovanni, Jan M. Tomczak, Karsten Held, Tien-Lin Lee, Ralph Claessen, Michael Sing

Abstract: Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that th… ▽ More Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a cap** layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit. △ Less

Submitted 22 February, 2022; originally announced February 2022.

Journal ref: Adv. Electron. Mater. 2021, 2101006

Global perspectives of the bulk electronic structure of URu$_2$Si$_2$ from angle-resolved photoemission

Authors: J. D. Denlinger, J. -S. Kang, L. Dudy, J. W. Allen, Kyoo Kim, J. -H. Shim, K. Haule, J. L. Sarrao, N. P. Butch, M. B. Maple

Abstract: Previous high-resolution angle-resolved photoemission (ARPES) studies of URu$_2$Si$_2$ have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level ($E_\mathrm{F}$) at low photon energies near the zone center, with an emphasis on electronic reconstruction due to Brillouin zone folding. A substantial challenge to a proper description is that these states inte… ▽ More Previous high-resolution angle-resolved photoemission (ARPES) studies of URu$_2$Si$_2$ have characterized the temperature-dependent behavior of narrow-band states close to the Fermi level ($E_\mathrm{F}$) at low photon energies near the zone center, with an emphasis on electronic reconstruction due to Brillouin zone folding. A substantial challenge to a proper description is that these states interact with other hole-band states that are generally absent from bulk-sensitive soft x-ray ARPES measurements. Here we provide a more global $k$-space context for the presence of such states and their relation to the bulk Fermi surface topology using synchrotron-based wide-angle and photon energy-dependent ARPES map** of the electronic structure using photon energies intermediate between the low-energy regime and the high-energy soft x-ray regime. Small-spot spatial dependence, $f$-resonant photoemission, Si 2$p$ core-levels, x-ray polarization, surface-dosing modification, and theoretical surface slab calculations are employed to assist identification of bulk versus surface state character of the $E_\mathrm{F}$-crossing bands and their relation to specific U- or Si-terminations of the cleaved surface. The bulk Fermi surface topology is critically compared to density functional theory and to dynamical mean field theory calculations. In addition to clarifying some aspects of the previously measured high symmetry $Γ$, Z and X points, incommensurate 0.6a* nested Fermi-edge states located along Z-N-Z are found to be distinctly different from the density functional theory Fermi surface prediction. The temperature evolution of these states above $T_{HO}$, combined with a more detailed theoretical investigation of this region, suggests a key role of the N-point in the hidden order transition. △ Less

Submitted 2 February, 2022; v1 submitted 30 November, 2021; originally announced November 2021.

Comments: topical review 47 pages, 12 figures, proof edits, hyperlinked TOC

Journal ref: Electron. Struct. 4, 013001 (2022)

Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Authors: Michael Zapf, Matthias Schmitt, Judith Gabel, Philipp Scheiderer, Martin Stübinger, Berengar Leikert, Giorgio Sangiovanni, Lenart Dudy, Sergii Chernov, Sergey Babenkov, Dmitry Vasilyev, Olena Fedchenko, Katerina Medjanik, Yury Matveyev, Andrei Gloskowski, Christoph Schlueter, Tien-Lin Lee, Hans-Joachim Elmers, Gerd Schönhense, Michael Sing, Ralph Claessen

Abstract: Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by… ▽ More Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively. △ Less

Submitted 20 September, 2022; v1 submitted 28 October, 2021; originally announced October 2021.

Comments: 13 pages, 7 figures

Tailoring the topological surface state in ultrathin $α$-Sn (111) films

Authors: Victor A. Rogalev, Felix Reis, Florian Adler, Maximilian Bauernfeind, Jonas Erhardt, André Kowalewski, Markus R. Scholz, Lenart Dudy, Liam B. Duffy, Thorsten Hesjedal, Moritz Hoesch, Gustav Bihlmayer, Jörg Schäfer, Ralph Claessen

Abstract: We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV be… ▽ More We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick $α$-Sn films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of $α$-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states. △ Less

Submitted 6 December, 2019; v1 submitted 24 October, 2019; originally announced October 2019.

Comments: 7 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 100, 245144 (2019)

Wannier-Orbital theory and ARPES for the quasi-1D conductor LiMo$_{6}$O$_{17}$

Authors: L. Dudy, J. W. Allen, J. D. Denlinger, J. He, M. Greenblatt, M. W. Haverkort, Y. Nohara, O. K. Andersen

Abstract: In this set of three papers, we present the results of a combined study by density-functional (LDA) band theory (NMTO) and angle-resolved photoemission spectroscopy (ARPES) of lithium purple bronze, 2(Li$_{1x}$Mo$_{6}$O$_{17}$). This material is particularly notable for its unusually robust quasi-one-dimensional (quasi-1D) behavior. The band structure, in a large energy window around the Fermi ene… ▽ More In this set of three papers, we present the results of a combined study by density-functional (LDA) band theory (NMTO) and angle-resolved photoemission spectroscopy (ARPES) of lithium purple bronze, 2(Li$_{1x}$Mo$_{6}$O$_{17}$). This material is particularly notable for its unusually robust quasi-one-dimensional (quasi-1D) behavior. The band structure, in a large energy window around the Fermi energy, is basically 2D and formed by three Mo $t_{2g}$-like extended Wannier orbitals (WOs) per cell, each one giving rise to a 1D band running at a 120$^{\circ }$ angle to the two others. A structural "dimerization" from $\mathbf{c}/2$ to $\mathbf{c}$ gaps the $xz$ and $yz$ bands while leaving the $xy$ bands metallic in the gap but resonantly coupled to the gap edges and, hence, to the two other directions. The resulting complex shape of the quasi-1D Fermi surface (FS), verified by our ARPES, thus depends strongly on the Fermi energy position in the gap, implying a great sensitivity to Li stoichiometry of properties dependent on the FS, such as FS nesting or superconductivity. The band structure, expressed as a six-band, analytical tight-binding (TB) Hamiltonian, is verified in detail by the recognition and application of an ARPES selection rule that enables, for the first time, the separation in ARPES spectra of the two barely split $xy$ bands and the observation of their complex split FS. The strong resonances prevent either a two-band TB model or a related real-space ladder picture from giving a valid description of the low-energy electronic structure. Down to a temperature of 6$\,$K we find no evidence for a theoretically expected downward renormalization of perpendicular single particle hop** due to LL fluctuations in the quasi-1D chains. △ Less

Submitted 25 November, 2023; v1 submitted 8 December, 2018; originally announced December 2018.

Tailoring Materials for Mottronics: Excess Oxygen Do** of a Prototypical Mott Insulator

Authors: Philipp Scheiderer, Matthias Schmitt, Judith Gabel, Martin Stübinger, Philipp Schütz, Lenart Dudy, Christoph Schlueter, Tien-Lin Lee, Michael Sing, Ralph Claessen

Abstract: The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the met… ▽ More The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here we demonstrate that thin films of the prototypical Mott insulator LaTiO$_3$ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen do** across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and cap** layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions, making LaTiO$_{3+x}$ a promising functional material for Mottronics devices. △ Less

Submitted 16 July, 2018; originally announced July 2018.

Journal ref: Advanced Materials 30, 1706708 (2018)

The topological surface state of $α$-Sn on InSb(001) as studied by photoemission

Authors: M. R. Scholz, V. A. Rogalev, L. Dudy, F. Reis, F. Adler, J. Aulbach, L. J. Collins-McIntyre, L. B. Duffy, H. F. Yang, Y. L. Chen, T. Hesjedal, Z. K. Liu, M. Hoesch, S. Muff, J. H. Dil, J. Schäfer, R. Claessen

Abstract: We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by… ▽ More We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We show that, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states. △ Less

Submitted 29 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. B 97, 075101 (2018)

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

Authors: P. Schütz, D. V. Christensen, V. Borisov, F. Pfaff, P. Scheiderer, L. Dudy, M. Zapf, J. Gabel, Y. Z. Chen, N. Pryds, V. A. Rogalev, V. N. Strocov, C. Schlueter, T. -L. Lee, H. O. Jeschke, R. Valentí, M. Sing, R. Claessen

Abstract: The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy… ▽ More The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Comments: Accepted as Rapid Communications in Physical Review B

Journal ref: Physical Review B (Rapid Communications), Vol. 96, p.161409(R), 2017

Dimensionality-driven metal-insulator-transition in spin-orbit coupled SrIrO$_3$

Authors: P. Schütz, D. Di Sante, L. Dudy, J. Gabel, M. Stübinger, M. Kamp, Y. Huang, M. Capone, M. -A. Husanu, V. Strocov, G. Sangiovanni, M. Sing, R. Claessen

Abstract: Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, a… ▽ More Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, and electronic correlations. The astonishing resemblance of the band structure in the two-dimensional limit to that of bulk Sr$_2$IrO$_4$ opens new avenues to unconventional superconductivity by "clean" electron do** through electric field gating. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Comments: 6 pages, 4 figures, cf. arXiv:1706.08901 for a recent complementary study

Journal ref: Phys. Rev. Lett. 119, 256404 (2017)

Double Band Inversion in $ α$-Sn: Appearance of Topological Surface States and the Role of Orbital Composition

Authors: Victor A. Rogalev, Tomáš Rauch, Markus R. Scholz, Felix Reis, Lenart Dudy, Andrzej Fleszar, Marius-Adrian Husanu, Vladimir N. Strocov, Jürgen Henk, Ingrid Mertig, Jörg Schäfer, Ralph Claessen

Abstract: The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of t… ▽ More The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of this state, which is a surface resonance, is confirmed by unravelling the band inversion and by calculating the topological invariants. In agreement with experiment, electronic structure calculations show the maximum density of states in the subsurface region, while the already established TSS near the Fermi level is strongly localized at the surface. Such varied behavior is explained by the differences in orbital composition between the specific TSS and its associated bulk states, respectively. This provides an orbital protection mechanism for topological states against mixing with the background of bulk bands. △ Less

Submitted 16 February, 2017; v1 submitted 12 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 95, 161117 (2017)

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm

Authors: F. Reis, G. Li, L. Dudy, M. Bauernfeind, S. Glass, W. Hanke, R. Thomale, J. Schäfer, R. Claessen

Abstract: Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH… ▽ More Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature. △ Less

Submitted 2 August, 2016; originally announced August 2016.

Comments: 4 figures

Journal ref: Science 357, 287-290 (2017)

Elemental Topological Insulator with a Tunable Fermi Level: Strained α-Sn on InSb(001)

Authors: A. Barfuss, L. Dudy, M. R. Scholz, H. Roth, P. Höpfner, C. Blumenstein, G. Landolt, J. H. Dil, N. C. Plumb, M. Radovic, A. Bostwick, E. Rotenberg, A. Fleszar, G. Bihlmayer, D. Wortmann, G. Li, W. Hanke, R. Claessen, J. Schäfer

Abstract: We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-pola… ▽ More We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants. △ Less

Submitted 9 September, 2013; v1 submitted 4 August, 2013; originally announced August 2013.

Comments: version 2 with supplementary information

Journal ref: Phys. Rev. Lett. 111 (2013) 157205

Yb Valence Change in (Ce,Yb)CoIn5 from spectroscopy and bulk properties

Authors: L. Dudy, J. D. Denlinger, L. Shu, M. Janoschek, J. W. Allen, M. B. Maple

Abstract: The electronic structure of (Ce,Yb)CoIn5 has been studied by a combination of photoemission, x-ray absorption and bulk property measurements. Previous findings of a Ce valence near 3+ for all x and of an Yb valence near 2.3+ for x>0.3 were confirmed. One new result of this study is that the Yb valence for x<0.2 increases rapidly with decreasing x from 2.3+ toward 3+, which correlates well with de… ▽ More The electronic structure of (Ce,Yb)CoIn5 has been studied by a combination of photoemission, x-ray absorption and bulk property measurements. Previous findings of a Ce valence near 3+ for all x and of an Yb valence near 2.3+ for x>0.3 were confirmed. One new result of this study is that the Yb valence for x<0.2 increases rapidly with decreasing x from 2.3+ toward 3+, which correlates well with de Haas van Alphen results showing a change of Fermi surface around x=0.2. Another new result is the direct observation by angle resolved photoemission Fermi surface maps of about 50% cross sectional area reductions of the α- and β-sheets for x=1 compared to x=0, and a smaller, essentially proportionate, size change of the α-sheet for x=0.2. These changes are found to be in good general agreement with expectations from simple electron counting. The implications of these results for the unusual robustness of superconductivity and Kondo coherence with increasing x in this alloy system are discussed. △ Less

Submitted 1 September, 2013; v1 submitted 23 March, 2013; originally announced March 2013.

Photoemission Spectroscopy and the Unusually Robust One Dimensional Physics of Lithium Purple Bronze

Authors: L. Dudy, J. D. Denlinger, J. W. Allen, F. Wang, J. He, D. Hitchcock, A. Sekiyama, S. Suga

Abstract: Temperature dependent photoemission spectroscopy in Li0.9Mo6O17 contributes to evidence for one dimensional physics that is unusually robust. Three generic characteristics of the Luttinger liquid are observed, power law behavior of the k-integrated spectral function down to temperatures just above the superconducting transition, k-resolved lineshapes that show holon and spinon features, and quantu… ▽ More Temperature dependent photoemission spectroscopy in Li0.9Mo6O17 contributes to evidence for one dimensional physics that is unusually robust. Three generic characteristics of the Luttinger liquid are observed, power law behavior of the k-integrated spectral function down to temperatures just above the superconducting transition, k-resolved lineshapes that show holon and spinon features, and quantum critical (QC) scaling in the lineshapes. Departures of the lineshapes and the scaling from expectations in the Tomonaga Luttinger model can be partially described by a phenomenological momentum broadening that is presented and discussed. The possibility that some form of 1d physics obtains even down to the superconducting transition temperature is assessed. △ Less

Submitted 22 March, 2013; v1 submitted 4 June, 2012; originally announced June 2012.

Comments: submitted to JPCM, Special issue article "Physics in one dimension"

Journal ref: Journal of Physics Condensed Matter 25, 014007 (2013)

Anomalies in the superconducting dome of the Bi-cuprates

Authors: L. Dudy, A. Krapf, H. Dwelk, S. Rogaschewski, B. Müller, O. Lübben, C. Janowitz, R. Manzke

Abstract: We report characterization results by energy dispersive x-ray analysis and AC-susceptibility for a statistically relevant number of single layer Bi-cuprate single crystals. We show that the two structurally quite different modifications of the single-layered Bi-cuprate, namely (La,Pb=0.4)-Bi2201 and La-Bi2201, exhibit anomalies in the superconducting transition temperature at certain hole do**,… ▽ More We report characterization results by energy dispersive x-ray analysis and AC-susceptibility for a statistically relevant number of single layer Bi-cuprate single crystals. We show that the two structurally quite different modifications of the single-layered Bi-cuprate, namely (La,Pb=0.4)-Bi2201 and La-Bi2201, exhibit anomalies in the superconducting transition temperature at certain hole do**, e.g. at 1/8 holes per Cu. These do** values agree well with the 'magic do** fractions' found in the temperature dependent resistance of LSCO by Komiya et al. This new set of findings suggests that all these anomalies are generic for the hole-doped high-temperature superconductors. △ Less

Submitted 14 December, 2010; originally announced December 2010.

Structural behavior of Pb$_y$Bi$_{1.95-y}$Sr$_{1.49}$La$_{0.4}$Cu$_{1.15}$O$_{6+δ}$ for 0<y<0.53

Authors: O. Lübben, L. Dudy, A. Krapf, C. Janowitz, R. Manzke

Abstract: In the Bi cuprates, the presence of a near 1$\times$5 superstructure is well known. Usually, this superstructure is suppressed by the substitution of lead, but there have been reports of a phase separation in so called α and β phases. This paper shows in high detail time how and why the phase separation develops and what happens to the quasi-1$\times$5 superstructure upon lead substitution. For th… ▽ More In the Bi cuprates, the presence of a near 1$\times$5 superstructure is well known. Usually, this superstructure is suppressed by the substitution of lead, but there have been reports of a phase separation in so called α and β phases. This paper shows in high detail time how and why the phase separation develops and what happens to the quasi-1$\times$5 superstructure upon lead substitution. For this purpose, the lanthanum- and lead-substituted single-layered superconductor Bi$_{2+z}$Sr$_{2-z}$CuO$_{6+δ}$ has been investigated by scanning tunneling microscopy and low-energy electron diffraction. The La content was kept constant at slightly under-doped concentration while the Pb content was changed systematically. Thermodynamic considerations show that a phase mixture of α and β phases is inevitable. △ Less

Submitted 24 March, 2016; v1 submitted 23 April, 2010; originally announced April 2010.

Comments: 17 pages, 4 figures

Journal ref: Phys. Rev. B 81, 174112 (2010)

Charge modulation driven Fermi surface of Pb-Bi2201

Authors: L. Dudy, B. Mueller, B. Ziegler, A. Krapf, H. Dwelk, O. Luebben, R. -P Blum, V. P. Martovitsky, C. Janowitz, R. Manzke

Abstract: It is well known that the (1x5) superstructure of Bi cuprate superconductors will be suppressed due to optimum do** with Pb. Nevertheless, a Fermi surface map of (Pb,La)-Bi2201 (Pb = 0.4 and La = 0.4) determined by angular resolved photoemission (ARPES) revealed additional Fermi surface features. Low energy electron diffraction and X-ray diffraction of these samples showed no sign of any super… ▽ More It is well known that the (1x5) superstructure of Bi cuprate superconductors will be suppressed due to optimum do** with Pb. Nevertheless, a Fermi surface map of (Pb,La)-Bi2201 (Pb = 0.4 and La = 0.4) determined by angular resolved photoemission (ARPES) revealed additional Fermi surface features. Low energy electron diffraction and X-ray diffraction of these samples showed no sign of any superstructure. Scanning tunneling microscopy (STM), on the other hand, revealed two distinct modulations of the charge density, one of (1x32) and a second of (6x6) periodicity. The wave vectors of both modulations have been extracted and used to simulate the corresponding Fermi surface, which is compared with the experimental one. The origin of these modulations is discussed in terms of dopant ordering. △ Less

Submitted 25 May, 2007; v1 submitted 23 February, 2007; originally announced February 2007.

Comments: 4 pages, 4 figures, accepted for Solid State Communications

Journal ref: Solid State Communications 143, 442 (2007)

Fermi surface and superconducting gap of triple-layered Bi2Sr2Ca2Cu3O10+d

Authors: R. Mueller, C. Janowitz, M. Schneider, R. -St. Unger, A. Krapf, H. Dwelk, A. Mueller, L. Dudy, R. Manzke, H. Hoechst

Abstract: We present a comprehensive study performed with high-resolution angle-resolved photoemission spectroscopy on triple-layered Bi2Sr2Ca2Cu3O10+d single crystals. By measurements above TC the Fermi surface topology defined by the Fermi level crossings of the CuO2-derived band was determined. A hole-like Fermi surface as for single and double-CuO2 layered Bi-based cuprates is found, giving new input… ▽ More We present a comprehensive study performed with high-resolution angle-resolved photoemission spectroscopy on triple-layered Bi2Sr2Ca2Cu3O10+d single crystals. By measurements above TC the Fermi surface topology defined by the Fermi level crossings of the CuO2-derived band was determined. A hole-like Fermi surface as for single and double-CuO2 layered Bi-based cuprates is found, giving new input to the current debate of the general Fermi surface topology of the high Tc superconductors. Furthermore, we present measurements of the superconducting gap of Bi-2223 and show that there are clear indications for a strong anisotropy of the superconducting gap. The universal properties of this phase in comparison to the other Bi-based cuprates will be discussed. △ Less

Submitted 24 October, 2001; originally announced October 2001.

Comments: 8 pages, 2 figure

Journal ref: J. Superconductivity 15, 147 (2002)

Unusual electronic ground state of a prototype cuprate: band splitting of single CuO_2-plane Bi_2 Sr_(2-x) La_x CuO_(6+delta)

Authors: C. Janowitz, R. Mueller, L. Dudy, A. Krapf, R. Manzke, C. Ast, H. Hoechst

Abstract: By in-situ change of polarization a small splitting of the Zhang-Rice singlet state band near the Fermi level has been resolved for optimum doped (x=0.4) Bi$_{2}$Sr$_{2-x}$La$_{x}$CuO$_{6+δ}$ at the (pi,0)-point (R.Manzke et al. PRB 63, R100504 (2001). Here we treat the momentum dependence and lineshape of the split band by photoemission in the EDC-mode with very high angular and energy resoluti… ▽ More By in-situ change of polarization a small splitting of the Zhang-Rice singlet state band near the Fermi level has been resolved for optimum doped (x=0.4) Bi$_{2}$Sr$_{2-x}$La$_{x}$CuO$_{6+δ}$ at the (pi,0)-point (R.Manzke et al. PRB 63, R100504 (2001). Here we treat the momentum dependence and lineshape of the split band by photoemission in the EDC-mode with very high angular and energy resolution. The splitting into two destinct emissions could also be observed over a large portion of the major symmetry line $Γ$M, giving the dispersion for the individual contributions. Since bi-layer effects can not be present in this single-layer material the results have to be discussed in the context of one-particle removal spectral functions derived from current theoretical models. The most prominent are microscopic phase separation including striped phase formation, coexisting antiferromagnetic and incommensurate charge-density-wave critical fluctuations coupled to electrons (hot spots) or even spin charge separation within the Luttinger liquid picture, all leading to non-Fermi liquid like behavior in the normal state and having severe consequences on the way the superconducting state forms. Especially the possibilty of observing spinon and holon excitations is discussed. △ Less

Submitted 6 November, 2001; v1 submitted 4 July, 2001; originally announced July 2001.

Comments: 5 pages, 4 figures