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Observation of stacking engineered magnetic phase transitions within moiré supercells of twisted van der Waals magnets
Authors:
Senlei Li,
Zeliang Sun,
Nathan J. McLaughlin,
Afsana Sharmin,
Nishkarsh Agarwal,
Mengqi Huang,
Suk Hyun Sung,
Hanyi Lu,
Shaohua Yan,
Hechang Lei,
Robert Hovden,
Hailong Wang,
Hua Chen,
Liuyan Zhao,
Chunhui Rita Du
Abstract:
Twist engineering of magnetic van der Waals (vdW) moiré superlattices provides an attractive way to achieve precise nanoscale control over the spin degree of freedom on two-dimensional flatland. Despite the very recent demonstrations of moiré magnetism featuring exotic phases with noncollinear spin order in twisted vdW magnet chromium triiodide CrI3, the local magnetic interactions, spin dynamics,…
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Twist engineering of magnetic van der Waals (vdW) moiré superlattices provides an attractive way to achieve precise nanoscale control over the spin degree of freedom on two-dimensional flatland. Despite the very recent demonstrations of moiré magnetism featuring exotic phases with noncollinear spin order in twisted vdW magnet chromium triiodide CrI3, the local magnetic interactions, spin dynamics, and magnetic phase transitions within and across individual moiré supercells remain elusive. Taking advantage of a scanning single-spin magnetometry platform, here we report observation of two distinct magnetic phase transitions with separate critical temperatures within a moiré supercell of small-angle twisted double trilayer CrI3. By measuring temperature dependent spin fluctuations at the coexisting ferromagnetic and antiferromagnetic regions in twisted CrI3, we explicitly show that the Curie temperature of the ferromagnetic state is higher than the Néel temperature of the antiferromagnetic one by ~10 K. Our mean-field calculations attribute such a spatial and thermodynamic phase separation to the stacking order modulated interlayer exchange coupling at the twisted interface of the moiré superlattices. The presented results highlight twist engineering as a promising tuning knob to realize on-demand control of not only the nanoscale spin order of moiré quantum matter but also its dynamic magnetic responses, which may find relevant applications in develo** transformative vdW electronic and magnetic devices.
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Submitted 17 June, 2024;
originally announced June 2024.
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Sensing Spin Wave Excitations by Spin Defects in Few-Layer Thick Hexagonal Boron Nitride
Authors:
**gcheng Zhou,
Hanyi Lu,
Di Chen,
Mengqi Huang,
Gerald Q. Yan,
Faris Al-matouq,
Jiu Chang,
Dziga Djugba,
Zhigang Jiang,
Hailong Wang,
Chunhui Rita Du
Abstract:
Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$…
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Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$ spin defects contained in few-layer thick hexagonal boron nitride nanoflakes. We show that the ferromagnetic resonance and parametric spin excitations can be effectively detected by $V_B^-$ spin defects under various experimental conditions through optically detected magnetic resonance measurements. The off-resonant dipole interaction between YIG magnons and $V_B^-$ spin defects is mediated by multi-magnon scattering processes, which may find relevant applications in a range of emerging quantum sensing, computing, and metrology technologies. Our results also highlight the opportunities offered by quantum spin defects in layered two-dimensional vdW materials for investigating local spin dynamic behaviors in magnetic solid-state matters.
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Submitted 1 May, 2024;
originally announced May 2024.
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Tailoring coercive fields and the Curie temperature via proximity coupling in WSe$_2$/Fe$_3$GeTe$_2$ van der Waals heterostructures
Authors:
Guodong Ma,
Renjun Du,
Fuzhuo Lian,
Song Bao,
Zi**g Guo,
Xiaofan Cai,
**gkuan Xiao,
Yaqing Han,
Di Zhang,
Siqi Jiang,
Jiabei Huang,
Xinglong Wu,
Alexander S. Mayorov,
**sheng Wen,
Lei Wang,
Geliang Yu
Abstract:
Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe$_2$/Fe$_3$GeTe$_2$ van der Waals (vdW) heterostructures and investigated the proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-depende…
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Hybrid structures consisting of two-dimensional (2D) magnets and semiconductors have exhibited extensive functionalities in spintronics and opto-spintronics. In this work, we have fabricated WSe$_2$/Fe$_3$GeTe$_2$ van der Waals (vdW) heterostructures and investigated the proximity effects on 2D magnetism. Through reflective magnetic circular dichroism (RMCD), we have observed a temperature-dependent modulation of magnetic order in the heterostructure. For temperatures above $40$ K, WSe$_2$-covered Fe$_3$GeTe$_2$ exhibits a larger coercive field than that observed in bare Fe$_3$GeTe$_2$, accompanied by a noticeable enhancement of the Curie temperature by $21$ K. This strengthening suggests an increase in magnetic anisotropy in the interfacial Fe$_3$GeTe$_2$ layer, which can be attributed to the spin-orbit coupling (SOC) proximity effect induced by the adjacent WSe$_2$ layers. However, at much lower temperatures ($T<20$ K), a non-monotonic modification of the coercive field is observed, showing both reduction and enhancement, which depends on the thickness of the WSe$_2$ and Fe$_3$GeTe$_2$ layers. Moreover, an unconventional two-step magnetization process emerges in the heterostructure, indicating the short-range nature of SOC proximity effects. Our findings revealing proximity effects on 2D magnetism may shed light on the design of future spintronic and memory devices based on 2D magnetic heterostructures.
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Submitted 28 April, 2024;
originally announced April 2024.
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Gate control of 2D magnetism in tri- and four-layers $\rm CrI_3$/graphene heterostructures
Authors:
** Wang,
Fuzhuo Lian,
Renjun Du,
Xiaofan Cai,
Song Bao,
Yaqing Han,
**gkuan Xiao,
Kenji Watanabe,
Takashi Taniguchi,
**sheng Wen,
Hongxin Yang,
Alexander S. Mayorov,
Lei Wang,
Geliang Yu
Abstract:
We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of…
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We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover proximity effects featuring gate and magnetic field tunability. The tunability of gate voltage is manifested in the alignment of the lowest conduction band of $\rm CrI_3$ and the Fermi level of graphene, which can be controlled by the gate voltage. The coexistence of the normal and atypical quantum Hall effects in our device also corresponds to gate-control modulation do**. The lowest conduction band depends on the magnetic states of the $\rm CrI_3$ and can be altered by the magnetic field, which corresponds to the resistance loops during back-and-forth sweeps of the magnetic field. Our results serve as a reference for exploiting the magnetic proximity effects in graphene.
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Submitted 27 April, 2024;
originally announced April 2024.
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Ferroelectricity in twisted double bilayer graphene
Authors:
Renjun Du,
**gkuan Xiao,
Di Zhang,
Xiaofan Cai,
Siqi Jiang,
Fuzhuo Lian,
Kenji Watanabe,
Takashi Taniguchi,
Lei Wang,
Geliang Yu
Abstract:
Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in…
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Two-dimensional ferroelectrics can maintain vertical polarization up to room temperature, and are, therefore, promising for next-generation nonvolatile memories. Although natural two-dimensional ferroelectrics are few, moiré superlattices provide us with a generalized method to construct ferroelectrics from non-ferroelectric parent materials. We report a realization of ferroelectric hysteresis in a AB-BA stacked twisted double bilayer graphene (TDBG) system. The ferroelectric polarization is prominent at zero external displacement field and reduces upon increasing displacement fields. TDBG in the AB-BA configuration possesses a superlattice of non-centrosymmetric domains, exhibiting alternatively switchable polarities even without the assistance of any boron nitride layers; however, in the AB-AB stacking case, the development of polarized domains necessitates the presence of a second superlattice induced by the adjacent boron nitride layer. Therefore, twisted multilayer graphene systems offer us a fascinating field to explore two-dimensional ferroelectricity.
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Submitted 27 April, 2024;
originally announced April 2024.
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Blood Works for Graphene Production
Authors:
Xiaofan Cai,
Ming Li,
Chao Chen,
Renjun Du,
Zi**g Guo,
** Wang,
Guodong Ma,
Xinglong Wu,
Zhiyuan Wang,
Yaqing Han,
Fuzhuo Lian,
**gkuan Xiao,
Siqi Jiang,
Lei Wang,
Alexander S. Mayorov,
Libo Gao,
Kostya S. Novoselov,
Geliang Yu
Abstract:
Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effectiv…
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Blood, a ubiquitous and fundamental carbohydrate material composed of plasma, red blood cells, white blood cells, and platelets, has been playing an important role in biology, life science, history, and religious study, while graphene has garnered significant attention due to its exceptional properties and extensive range of potential applications. Achieving environmentally friendly, cost-effective growth using hybrid precursors and obtaining high-quality graphene through a straightforward CVD process has been traditionally considered mutually exclusive. This study demonstrates that we can produce high-quality graphene domains with controlled thickness through a one-step growth process at atmospheric pressure using blood as a precursor. Raman spectroscopy confirms the uniformity of the blood-grown graphene films, and observing the half-integer quantum Hall effect in the measured devices highlights its outstanding electronic properties. This unprecedented approach opens possibilities for blood application, facilitating an unconventional route in graphene growth applications.
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Submitted 27 April, 2024;
originally announced April 2024.
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Magneto-Induced Topological Phase Transition in Inverted InAs/GaSb Bilayers
Authors:
Zhongdong Han,
Tingxin Li,
Long Zhang,
Rui-Rui Du
Abstract:
We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently the electron and hole densities, can be continuously tuned. We observe a topological phase transition around the magnetic field where a band crossing occurs, th…
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We report a magneto-induced topological phase transition in inverted InAs/GaSb bilayers from a quantum spin Hall insulator to a normal insulator. We utilize a dual-gated Corbino device in which the degree of band inversion, or equivalently the electron and hole densities, can be continuously tuned. We observe a topological phase transition around the magnetic field where a band crossing occurs, that is accompanied by a bulk-gap closure characterized by a bulk conductance peak (BCP). In another set of experiments, we study the transition under a tilted magnetic field (tilt angle $θ$). We observe the characteristic magneto-conductance around BCP as a function of $θ$, which dramatically depends on the density of the bilayers. In a relatively deep-inversion (hence a higher density) regime, where the electron-hole hybridization dominates the excitonic interaction, the BCP grows with $θ$. On the contrary, in a shallowly-inverted (a lower density) regime, where the excitonic interaction dominates the hybridization, the BCP is suppressed indicating a smooth crossover without a gap closure. This suggests the existence of a low-density, correlated insulator with spontaneous symmetry breaking near the critical point. Our highly controllable electron-hole system offers an ideal platform to study interacting topological states as proposed by recent theories.
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Submitted 7 April, 2024;
originally announced April 2024.
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Observation of unconventional charge order during the transition from Mott-insulator to charge-transfer-insulator in $α$-RuCl$_3$
Authors:
Xiaohu Zheng,
Zhengxin Liu,
Cuiwei Zhang,
Huaxue Zhou,
Chongli Yang,
Youguo Shi,
Katsumi Tanigaki,
Rui-Rui Du
Abstract:
The magnetic nature of the Kitaev candidate material $α$-RuCl$_3$ has been widely studied but its charge properties are less known. In the present work, we systematically investigate the scanning tunneling microscopy/spectroscopy (STM/STS) on few-layer $α$-RuCl$_3$ in proximity to graphite. While a single-layer $α$-RuCl$_3$ has a large Mott gap of order 2 eV in spite of charge transferring to the…
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The magnetic nature of the Kitaev candidate material $α$-RuCl$_3$ has been widely studied but its charge properties are less known. In the present work, we systematically investigate the scanning tunneling microscopy/spectroscopy (STM/STS) on few-layer $α$-RuCl$_3$ in proximity to graphite. While a single-layer $α$-RuCl$_3$ has a large Mott gap of order 2 eV in spite of charge transferring to the heterointerface from graphite, surface of 2-monolayers (MLs) and 3-MLs samples have a reduced charge gap of order of 200 meV. Furthermore, clear signals of lattice and charge incommensurate super-modulations are observed in 2-MLs $α$-RuCl$_3$ with negative sample biases outside the charge gap. The dI/dV spectra indicates that 2-MLs and 3-MLs $α$-RuCl$_3$ are turned from Mott insulator into charge transfer insulator, while the charge super-modulation suggests the existence of charge density wave induced by incommensurate dipole order.
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Submitted 17 March, 2024;
originally announced March 2024.
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Two Ultracold Atoms in a Quasi-Two-Dimensional Box Confinement
Authors:
Fan Yang,
Ruijie Du,
Ran Qi,
Peng Zhang
Abstract:
We investigate the scattering and two-body bound states of two ultracold atoms in a quasi-two-dimensional (quasi-2D) confinement, with the confinement potential being an infinite square well (box potential) in the transverse ($z$-) direction, and the motion of the atoms in the $x$-$y$ plane being free. Specifically, we calculate the effective 2D scattering length and 2D effective range of the low-…
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We investigate the scattering and two-body bound states of two ultracold atoms in a quasi-two-dimensional (quasi-2D) confinement, with the confinement potential being an infinite square well (box potential) in the transverse ($z$-) direction, and the motion of the atoms in the $x$-$y$ plane being free. Specifically, we calculate the effective 2D scattering length and 2D effective range of the low-energy scattering, as well as the energy and the transverse-excited-mode probability of the bound states. Comparing these results with those obtained under a harmonic transverse confinement potential, we find that in most of the cases the 2D effective range for the box confinement is approximately 0.28 of the one for the harmonic confinement. Moreover, the transverse-excited-mode probability of the bound states for the box confinement is also much lower than the one for the harmonic confinement. These results suggest that the transverse excitation in the box confinement is notably weaker than the one in a harmonic confinement. Therefore, achieving quasi-2D ultracold gases well-described by pure-2D effective models, particularly those with 2D contact interaction, is more feasible through box confinement. Our results are helpful for the quantum simulation of 2D many-body physics with ultracold atoms, e.g., the suppression of 2D effective range may lead to an enhancement of quantum anomaly in two-dimensional Fermi Gases. Additionally, our calculation method is applicable to the two-body problems of ultracold atoms in other types of quasi-2D confinements.
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Submitted 1 March, 2024;
originally announced March 2024.
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Superballistic flow of viscous electron fluid induced by microwave irradiation in quantum point contact
Authors:
Xinghao Wang,
Wenfeng Zhang,
Rui-Rui Du,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
We measure the resistance oscillation of quantum point contact (QPC) under microwave (MW) radiation. What is different from the common resistance oscillation induced by edge magnetoplasmon (EMP) is that at lower magnetic field (ω>ω_c), photoconductance is positive (negative) with weak (strong) MW radiation. This transport phenomenon is proved to be related to superballistic flow of electrons throu…
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We measure the resistance oscillation of quantum point contact (QPC) under microwave (MW) radiation. What is different from the common resistance oscillation induced by edge magnetoplasmon (EMP) is that at lower magnetic field (ω>ω_c), photoconductance is positive (negative) with weak (strong) MW radiation. This transport phenomenon is proved to be related to superballistic flow of electrons through QPC. The distinction between the regions ω>ω_c and ω<ω_c is attributed to different absorption rate of MW radiation. Violent absorption occurs when cyclotron orbits or current domains are destroyed in QPC region.
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Submitted 4 March, 2024;
originally announced March 2024.
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Interaction between Surface Acoustic Wave and Quantum Hall Effects
Authors:
Xiao Liu,
Mengmeng Wu,
Renfei Wang,
Xinghao Wang,
Wenfeng Zhang,
Yujiang Dong,
Rui-Rui Du,
Yang Liu,
Xi Lin
Abstract:
Surface Acoustic Wave (SAW) is a powerful technique for investigating quantum phases appearing in two-dimensional electron systems. The electrons respond to the piezoelectric field of SAWthrough screening, attenuating its amplitude and shifting its velocity, which is described by the relaxation model. In this work, we systematically study this interaction using orders of magnitude lower SAW amplit…
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Surface Acoustic Wave (SAW) is a powerful technique for investigating quantum phases appearing in two-dimensional electron systems. The electrons respond to the piezoelectric field of SAWthrough screening, attenuating its amplitude and shifting its velocity, which is described by the relaxation model. In this work, we systematically study this interaction using orders of magnitude lower SAW amplitude than that in previous studies. At high magnetic fields when electrons form highly correlated states such as the quantum Hall effect, we observe an anomalously large attenuation of SAW while the acoustic speed remains considerably high, inconsistent with the conventional relaxation model. This anomaly exists only when the SAW power is sufficiently low.
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Submitted 8 April, 2024; v1 submitted 7 February, 2024;
originally announced February 2024.
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arXiv:2401.04793
[pdf]
cond-mat.mtrl-sci
cond-mat.mes-hall
cond-mat.str-el
cond-mat.supr-con
quant-ph
2024 Roadmap on Magnetic Microscopy Techniques and Their Applications in Materials Science
Authors:
D. V. Christensen,
U. Staub,
T. R. Devidas,
B. Kalisky,
K. C. Nowack,
J. L. Webb,
U. L. Andersen,
A. Huck,
D. A. Broadway,
K. Wagner,
P. Maletinsky,
T. van der Sar,
C. R. Du,
A. Yacoby,
D. Collomb,
S. Bending,
A. Oral,
H. J. Hug,
A. -O. Mandru,
V. Neu,
H. W. Schumacher,
S. Sievers,
H. Saito,
A. A. Khajetoorians,
N. Hauptmann
, et al. (28 additional authors not shown)
Abstract:
Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of…
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Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of major importance to understand the material responses and qualify them for specific applications. In this roadmap, we aim to cover a broad portfolio of techniques to perform nano- and microscale magnetic imaging using SQUIDs, spin center and Hall effect magnetometries, scanning probe microscopies, x-ray- and electron-based methods as well as magnetooptics and nanoMRI. The roadmap is aimed as a single access point of information for experts in the field as well as the young generation of students outlining prospects of the development of magnetic imaging technologies for the upcoming decade with a focus on physics, materials science, and chemistry of planar, 3D and geometrically curved objects of different material classes including 2D materials, complex oxides, semi-metals, multiferroics, skyrmions, antiferromagnets, frustrated magnets, magnetic molecules/nanoparticles, ionic conductors, superconductors, spintronic and spinorbitronic materials.
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Submitted 9 January, 2024;
originally announced January 2024.
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Insulator-to-metal Mott transition facilitated by lattice deformation in monolayer $α$-RuCl$_3$ on graphite
Authors:
Xiaohu Zheng,
Ogasawara Takuma,
Huaxue Zhou,
Chongli Yang,
Xin Han,
Gang Wang,
Junhai Ren,
Youguo Shi,
Katsumi Tanigaki,
Rui-Rui Du
Abstract:
Creating heterostructures with graphene/graphite is a practical method for charge-do** $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of…
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Creating heterostructures with graphene/graphite is a practical method for charge-do** $α$-RuCl$_3$, but not sufficient to cause the insulator-to-metal transition. In this study, detailed scanning tunneling microscopy/spectroscopy measurements on $α$-RuCl$_3$ with various lattice deformations reveal that both in-plane and out-of-plane lattice distortions may collapse the Mott-gap in the case of monolayer $α$-RuCl$_3$ in proximity to graphite, but have little impact on its bulk form alone. In the Mott-Hubbard framework, the transition is attributed to the lattice distortion-facilitated substantial modulation of the electron correlation parameter. Observation of the orbital textures on a highly compressed monolayer $α$-RuCl$_3$ flake on graphite provides valuable evidence that electrons are efficiently transferred from the heterointerface into Cl3$p$ orbitals under the lattice distortion. It is believed that the splitting of Ru $t_{2g}$ bands within the trigonal distortion of Ru-Cl-Ru octahedra bonds generated the electrons transfer pathways. The increase of the Cl3$p$ states enhance the hop** integral in the Mott-Hubbard bands, resulting in the Mott-transition. These findings suggest a new route for implementing the insulator-to-metal transition upon do** in $α$-RuCl$_3$ by deforming the lattice in addition to the formation of heterostructure.
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Submitted 14 December, 2023;
originally announced December 2023.
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Local control of a single nitrogen-vacancy center by nanoscale engineered magnetic domain wall motions
Authors:
Nathan J. McLaughlin,
Senlei Li,
Jeffrey A. Brock,
Shu Zhang,
Hanyi Lu,
Mengqi Huang,
Yuxuan Xiao,
**gcheng Zhou,
Yaroslav Tserkovnyak,
Eric E. Fullerton,
Hailong Wang,
Chunhui Rita Du
Abstract:
Effective control and readout of qubits form the technical foundation of next-generation, transformative quantum information sciences and technologies. The nitrogen-vacancy (NV) center, an intrinsic three-level spin system, is naturally relevant in this context due to its excellent quantum coherence, high fidelity of operations, and remarkable functionality over a broad range of experimental condi…
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Effective control and readout of qubits form the technical foundation of next-generation, transformative quantum information sciences and technologies. The nitrogen-vacancy (NV) center, an intrinsic three-level spin system, is naturally relevant in this context due to its excellent quantum coherence, high fidelity of operations, and remarkable functionality over a broad range of experimental conditions. It is an active contender for the development and implementation of cutting-edge quantum technologies. Here, we report magnetic domain wall motion driven local control and measurements of NV spin properties. By engineering the local magnetic field environment of an NV center via nanoscale reconfigurable domain wall motions, we show that NV photoluminescence, spin level energies, and coherence time can be reliably controlled and correlated to the magneto-transport response of a magnetic device. Our results highlight the electrically tunable dipole interaction between NV centers and nanoscale magnetic structures, providing an attractive platform to realize interactive information transfer between spin qubits and non-volatile magnetic memory in hybrid quantum spintronic systems.
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Submitted 20 November, 2023;
originally announced November 2023.
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Entropy Production on Cooperative Opinion Dynamics
Authors:
Igor V. G. Oliveira,
Chao Wang,
Gaogao Dong,
Rui** Du,
Carlos E. Fiore,
H. Eugene Stanley,
André L. M. Vilela
Abstract:
As one of the most widespread social dynamics, cooperative behavior is among the most fascinating collective phenomena. Several animal species, from social insects to human beings, feature social groups altruistically working for a common benefit. This collaborative conduct pervades the actions and opinions of individuals, yielding strategic decision-making between political, religious, ethnic, an…
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As one of the most widespread social dynamics, cooperative behavior is among the most fascinating collective phenomena. Several animal species, from social insects to human beings, feature social groups altruistically working for a common benefit. This collaborative conduct pervades the actions and opinions of individuals, yielding strategic decision-making between political, religious, ethnic, and economic social puzzles. Here, we explore how cooperative behavior phenomena impact collective opinion dynamics and entropy generation in social groups. We select a random fraction $f$ of community members as collaborative individuals and model the opinion dynamics using a social temperature parameter $q$ that functions as a social anxiety noise. With probability $q$, regular individuals oppose their companions about a social decision, assuming group dissent. Collaborative agents experience a reduced effective social noise $μq$, where $0 < μ< 1$ is the social anxiety noise sensibility parameter that enhances social validation. We perform numerical simulations and mean-field analysis and find the system undergoes nonequilibrium order-disorder phase transitions with expressive social entropy production. Our results also highlight the effects of an individual social anxiety attenuation level in enhancing group consensus and inducing exuberant collective phenomena in complex systems.
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Submitted 9 November, 2023;
originally announced November 2023.
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Layer-dependent magnetism and spin fluctuations in atomically thin van der Waals magnet CrPS4
Authors:
Mengqi Huang,
Jazmine C. Green,
**gcheng Zhou,
Violet Williams,
Senlei Li,
Hanyi Lu,
Dziga Djugba,
Hailong Wang,
Benedetta Flebus,
Ni Ni,
Chunhui Rita Du
Abstract:
van der Waals (vdW) magnets, an emerging family of two-dimensional (2D) materials, have received tremendous attention due to their rich fundamental physics and significant potential for cutting-edge technological applications. In contrast to the conventional bulk counterparts, vdW magnets exhibit significant tunability of local material properties, such as stacking engineered interlayer coupling a…
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van der Waals (vdW) magnets, an emerging family of two-dimensional (2D) materials, have received tremendous attention due to their rich fundamental physics and significant potential for cutting-edge technological applications. In contrast to the conventional bulk counterparts, vdW magnets exhibit significant tunability of local material properties, such as stacking engineered interlayer coupling and layer-number dependent magnetic and electronic interactions, which promise to deliver previously unavailable merits to develop multifunctional microelectronic devices. As a further ingredient of this emerging topic, here we report nanoscale quantum sensing and imaging of atomically thin vdW magnet chromium thiophosphate CrPS4, revealing its characteristic layer-dependent 2D static magnetism and dynamic spin fluctuations. We also show a large tunneling magnetoresistance in CrPS4-based spin filter vdW heterostructures. The excellent material stability, robust strategy against environmental degradation, in combination with tailored magnetic properties highlight the potential of CrPS4 in develo** state-of-the-art 2D spintronic devices for next-generation information technologies.
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Submitted 29 August, 2023;
originally announced August 2023.
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Excitonic topological order in imbalanced electron-hole bilayers
Authors:
Rui Wang,
Tigran A. Sedrakyan,
Baigeng Wang,
Lingjie Du,
Rui-Rui Du
Abstract:
Correlation and frustration play essential roles in physics, giving rise to novel quantum phases [1-6]. A typical frustrated system is correlated bosons on moat bands, which could host topological orders with long-range quantum entanglement [4]. However, the realization of moat-band physics is still challenging. Here, we explore moat-band phenomena in shallowly-inverted InAs/GaSb quantum wells, wh…
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Correlation and frustration play essential roles in physics, giving rise to novel quantum phases [1-6]. A typical frustrated system is correlated bosons on moat bands, which could host topological orders with long-range quantum entanglement [4]. However, the realization of moat-band physics is still challenging. Here, we explore moat-band phenomena in shallowly-inverted InAs/GaSb quantum wells, where we observe an unconventional time-reversal-symmetry breaking excitonic ground state under imbalanced electron and hole densities. We find a large bulk gap exists encompassing a broad range of density imbalance at zero magnetic field (B), accompanied by edge channels that resemble helical transport. Under an increasing perpendicular B, the bulk gap persists, and an anomalous plateau of Hall signals appears, which demonstrates an evolution from helical-like to chiral-like edge transport with a Hall conductance ~e2/h at 35 Tesla. Theoretically, we show that strong frustration from density imbalance leads to a moat band for excitons, resulting in a time-reversal-symmetry breaking excitonic topological order, which explains all our experimental observations. Our work opens up a new direction for research on topological and correlated bosonic systems in solid states beyond the framework of symmetry-protected topological phases, including but not limited to the bosonic fractional quantum Hall effect.
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Submitted 14 July, 2023;
originally announced July 2023.
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Revealing intrinsic domains and fluctuations of moiré magnetism by a wide-field quantum microscope
Authors:
Mengqi Huang,
Zeliang Sun,
Gerald Yan,
Hongchao Xie,
Nishkarsh Agarwal,
Gaihua Ye,
Suk Hyun Sung,
Hanyi Lu,
**gcheng Zhou,
Shaohua Yan,
Shangjie Tian,
Hechang Lei,
Robert Hovden,
Rui He,
Hailong Wang,
Liuyan Zhao,
Chunhui Rita Du
Abstract:
Moiré magnetism featured by stacking engineered atomic registry and lattice interactions has recently emerged as an appealing quantum state of matter at the forefront condensed matter physics research. Nanoscale imaging of moiré magnets is highly desirable and serves as a prerequisite to investigate a broad range of intriguing physics underlying the interplay between topology, electronic correlati…
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Moiré magnetism featured by stacking engineered atomic registry and lattice interactions has recently emerged as an appealing quantum state of matter at the forefront condensed matter physics research. Nanoscale imaging of moiré magnets is highly desirable and serves as a prerequisite to investigate a broad range of intriguing physics underlying the interplay between topology, electronic correlations, and unconventional nanomagnetism. Here we report spin defect-based wide-field imaging of magnetic domains and spin fluctuations in twisted double trilayer (tDT) chromium triiodide CrI3. We explicitly show that intrinsic moiré domains of opposite magnetizations appear over arrays of moiré supercells in low-twist-angle tDT CrI3. In contrast, spin fluctuations measured in tDT CrI3 manifest little spatial variations on the same mesoscopic length scale due to the dominant driving force of intralayer exchange interaction. Our results enrich the current understanding of exotic magnetic phases sustained by moiré magnetism and highlight the opportunities provided by quantum spin sensors in probing microscopic spin related phenomena on two-dimensional flatland.
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Submitted 7 July, 2023;
originally announced July 2023.
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Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
Authors:
Anyuan Gao,
Yu-Fei Liu,
Jian-Xiang Qiu,
Barun Ghosh,
Thaís V. Trevisan,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Hung-Ju Tien,
Shao-Wen Chen,
Mengqi Huang,
Damien Bérubé,
Houchen Li,
Christian Tzschaschel,
Thao Dinh,
Zhe Sun,
Sheng-Chin Ho,
Shang-Wei Lien,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Hsin Lin,
Tay-Rong Chang,
Chunhui Rita Du
, et al. (6 additional authors not shown)
Abstract:
Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferroma…
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Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics.
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Submitted 23 July, 2023; v1 submitted 15 June, 2023;
originally announced June 2023.
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Nanoscale magnetic domains in polycrystalline Mn3Sn films imaged by a scanning single-spin magnetometer
Authors:
Senlei Li,
Mengqi Huang,
Hanyi Lu,
Nathan J. McLaughlin,
Yuxuan Xiao,
**gcheng Zhou,
Eric E. Fullerton,
Hua Chen,
Hailong Wang,
Chunhui Rita Du
Abstract:
Noncollinear antiferromagnets with novel magnetic orders, vanishingly small net magnetization and exotic spin related properties hold enormous promise for develo** next-generation, transformative spintronic applications. A major ongoing research focus of this community is to explore, control, and harness unconventional magnetic phases of this emergent material system to deliver state-of-the-art…
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Noncollinear antiferromagnets with novel magnetic orders, vanishingly small net magnetization and exotic spin related properties hold enormous promise for develo** next-generation, transformative spintronic applications. A major ongoing research focus of this community is to explore, control, and harness unconventional magnetic phases of this emergent material system to deliver state-of-the-art functionalities for modern microelectronics. Here we report direct imaging of magnetic domains of polycrystalline Mn3Sn films, a prototypical noncollinear antiferromagnet, using nitrogen-vacancy-based single-spin scanning microscopy. Nanoscale evolution of local stray field patterns of Mn3Sn samples are systematically investigated in response to external driving forces, revealing the characteristic "heterogeneous" magnetic switching behaviors in polycrystalline textured Mn3Sn films. Our results contribute to a comprehensive understanding of inhomogeneous magnetic orders of noncollinear antiferromagnets, highlighting the potential of nitrogen-vacancy centers to study microscopic spin properties of a broad range of emergent condensed matter systems.
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Submitted 18 May, 2023;
originally announced May 2023.
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Realization of independent contacts in barrier-separated InAs/GaSb quantum wells
Authors:
Xingjun Wu,
Jianhuan Wang,
Miaoling Huang,
Shili Yan,
Rui-Rui Du
Abstract:
InAs/GaSb double quantum wells (QWs) separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs $[E_f^s(\rm InAs)]$ for realizing independent electric contacts to each well. In particular, separate ohmic contacts to the upper InAs quantum well are achieved by selectively etching…
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InAs/GaSb double quantum wells (QWs) separated by a 100 Å AlSb middle barrier are grown by molecular beam epitaxy. We report a nanofabrication technique that utilizes the surface Fermi level pinning position in InAs $[E_f^s(\rm InAs)]$ for realizing independent electric contacts to each well. In particular, separate ohmic contacts to the upper InAs quantum well are achieved by selectively etching down to the InAs, while contacts to the lower GaSb quantum well are obtained by the depletion method. For the latter, the upper InAs quantum well is locally pinched off by top etched trenches capped with a remaining 2-3 nm InAs layer. As a result of a relatively low $E_f^s(\rm InAs)$, applying a negative bias gate potential will create a conducting hole channel in GaSb, and hence a separate ohmic contact to the lower quantum well. This method is demonstrated with experiment and the support of a self-consistent band bending calculation. A number of experiments on separately probing Coulomb and tunnel-coupled InAs/GaSb systems now become accessible.
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Submitted 12 March, 2023;
originally announced March 2023.
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Spin Dynamics in van der Waals Magnetic Systems
Authors:
Chunli Tang,
Laith Alahmed,
Muntasir Mahdi,
Yuzan Xiong,
Jerad Inman,
Nathan J. McLaughlin,
Christoph Zollitsch,
Tae Hee Kim,
Chunhui Rita Du,
Hidekazu Kurebayashi,
Elton J. G. Santos,
Wei Zhang,
Peng Li,
Wencan **
Abstract:
The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW magnetic compounds with unique properties, which provides an ideal platform to study magnetism in the atomically thin limit. In parallel, based on tunneling magnet…
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The discovery of atomic monolayer magnetic materials has stimulated intense research activities in the two-dimensional (2D) van der Waals (vdW) materials community. The field is growing rapidly and there has been a large class of 2D vdW magnetic compounds with unique properties, which provides an ideal platform to study magnetism in the atomically thin limit. In parallel, based on tunneling magnetoresistance and magneto-optical effect in 2D vdW magnets and their heterostructures, emerging concepts of spintronic and optoelectronic applications such as spin tunnel field-effect transistors and spin-filtering devices are explored. While the magnetic ground state has been extensively investigated, reliable characterization and control of spin dynamics play a crucial role in designing ultrafast spintronic devices. Ferromagnetic resonance (FMR) allows direct measurements of magnetic excitations, which provides insight into the key parameters of magnetic properties such as exchange interaction, magnetic anisotropy, gyromagnetic ratio, spin-orbit coupling, dam** rate, and domain structure. In this review article, we present an overview of the essential progress in probing spin dynamics of 2D vdW magnets using FMR techniques. Given the dynamic nature of this field, we focus mainly on broadband FMR, optical FMR, and spin-torque FMR, and their applications in studying prototypical 2D vdW magnets. We conclude with the recent advances in laboratory- and synchrotron-based FMR techniques and their opportunities to broaden the horizon of research pathways into atomically thin magnets.
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Submitted 28 August, 2023; v1 submitted 24 January, 2023;
originally announced January 2023.
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Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle
Authors:
Hui Li,
Junbo Yang,
Xiaohui Li,
Mo Cheng,
Wang Feng,
Ruofan Du,
Yuzhu Wang,
Luying Song,
Xia Wen,
Lei Liao,
Yanfeng Zhang,
Jian** Shi,
Jun He
Abstract:
Epitaxial growth and controllable do** of wafer-scale single-crystal transition-metal dichalcogenides (TMDCs) are two central tasks for extending Moore's law beyond silicon. However, despite considerable efforts, addressing such crucial issues simultaneously under two-dimensional (2D) confinement is yet to be realized. Here we design an ingenious epitaxial strategy to synthesize record-breaking…
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Epitaxial growth and controllable do** of wafer-scale single-crystal transition-metal dichalcogenides (TMDCs) are two central tasks for extending Moore's law beyond silicon. However, despite considerable efforts, addressing such crucial issues simultaneously under two-dimensional (2D) confinement is yet to be realized. Here we design an ingenious epitaxial strategy to synthesize record-breaking 4-inch single-crystal Fe-doped TMDCs monolayers on industry-compatible c-plane sapphire without miscut angle. In-depth characterizations and theoretical calculations reveal that the introduction of Fe significantly decreases the formation energy of parallel steps on sapphire surfaces and contributes to the edge-nucleation of unidirectional TMDCs domains (>99%). The ultrahigh electron mobility (~86 cm2 V -1 s-1) and remarkable on/off current ratio (~108) are discovered on 4-inch single-crystal Fe-MoS2 monolayers due to the ultralow contact resistance and perfect Ohmic contact with metal electrodes. This work represents a substantial leap in terms of bridging the synthesis and do** of wafer-scale single-crystal 2D semiconductors without the need for substrate miscut, which should promote the further device downscaling and extension of Moore's law.
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Submitted 16 September, 2022;
originally announced September 2022.
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Solutions of the Schrödinger equation for anisotropic dipole-dipole interaction plus isotropic van der Waals interaction
Authors:
Ruijie Du,
Ran Qi,
Peng Zhang
Abstract:
By generalizing Bo Gao's approach [Phys. Rev. A 58, 1728 (1998)] for solving the Schrödinger equation for an isotropic van der Waals (vdW) potential to the systems with a multi-scale anisotropic long-range interaction, we derive the solutions for the Schrödinger equation for an anisotropic dipole-dipole interaction plus an isotropic attractive vdW potential, i.e.,…
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By generalizing Bo Gao's approach [Phys. Rev. A 58, 1728 (1998)] for solving the Schrödinger equation for an isotropic van der Waals (vdW) potential to the systems with a multi-scale anisotropic long-range interaction, we derive the solutions for the Schrödinger equation for an anisotropic dipole-dipole interaction plus an isotropic attractive vdW potential, i.e., ${C_d(1-3\cos^2θ)}/{r^3}-{C_6}/{r^6}$, which is projected to the subspace with angular momentum $l\leq l_{\rm cut}$, with $l_{\rm cut}$ being an arbitrary angular-momentum cutoff. Here $θ$ is the polar angle of the coordinate $\boldsymbol{r}$ and $r=|\boldsymbol{r}|$. The asymptotic behaviors of these solutions for $r\rightarrow 0$ and $r\rightarrow \infty$ are obtained. These results can be used in the research of collisions and chemical reactions between ultra-cold polar molecules in a static electric field. Our approach to derive the solutions can be applied to the systems with a general long-range potential $\sum_{λ= 2}^{λ_{\rm max}} {V_λ(θ,\varphi)}/{r^λ}$, with $\varphi$ being the azimuthal angle of $\boldsymbol{r}$, and thus can be used in various problems on molecule-molecule interaction.
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Submitted 21 July, 2022; v1 submitted 19 July, 2022;
originally announced July 2022.
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Electric-Field-Induced Coherent Control of Nitrogen Vacancy Centers
Authors:
Gerald Q. Yan,
Senlei Li,
Tatsuya Yamamoto,
Mengqi Huang,
Nathan McLaughlin,
Takayuki Nozaki,
Hailong Wang,
Shinji Yuasa,
Chunhui Rita Du
Abstract:
Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent manipulation of nitrogen-vacancy (NV) centers by the spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably,…
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Enabling scalable and energy-efficient control of spin defects in solid-state media is desirable for realizing transformative quantum information technologies. Exploiting voltage-controlled magnetic anisotropy, we report coherent manipulation of nitrogen-vacancy (NV) centers by the spatially confined magnetic stray fields produced by a proximate resonant magnetic tunnel junction (MTJ). Remarkably, the coherent coupling between NV centers and the MTJ can be systematically controlled by a DC bias voltage, allowing for appreciable electrical tunability in the presented hybrid system. In comparison with current state-of-the-art techniques, the demonstrated NV-based quantum operational platform exhibits significant advantages in scalability, device compatibility, and energy-efficiency, further expanding the role of NV centers in a broad range of quantum computing, sensing, and communications applications.
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Submitted 21 June, 2022;
originally announced June 2022.
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Quench dynamics of Bose-Einstein condensates in boxlike traps
Authors:
Rong Du,
Jian-Chong Xing,
Bo Xiong,
Jun-Hui Zheng,
Tao Yang
Abstract:
We investigate the nonequilibrium dynamics of two-dimensional Bose-Einstein condensates in boxlike traps with power-law potential boundaries by quenching the interatomic interactions. For both concave and convex potentials, we show that ring dark solitons can be excited during the quench dynamics. The modulation strength of the quench and the steepness of the boundary are two main factors affectin…
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We investigate the nonequilibrium dynamics of two-dimensional Bose-Einstein condensates in boxlike traps with power-law potential boundaries by quenching the interatomic interactions. For both concave and convex potentials, we show that ring dark solitons can be excited during the quench dynamics. The modulation strength of the quench and the steepness of the boundary are two main factors affecting the evolution of the system. Five dynamic regimes are identified concerning the number of ring dark solitons excited in the condensate. For the situation without ring dark soliton excitations, the condensate undergoes damped radius oscillation. As far as the appearance of ring dark solitons, interesting structures arise from their decay. For the concave potential, the excitation patterns show a nested structure of vortex-antivortex pairs. For the convex potential, on the other hand, the dynamic excitation patterns display richer structures that have multiple transport behaviors.
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Submitted 31 May, 2022;
originally announced May 2022.
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Hydrodynamic charge transport in GaAs/AlGaAs ultrahigh-mobility two-dimensional electron gas
Authors:
Xinghao Wang,
Peizhe Jia,
Rui-Rui Du,
L. N. Pfeiffer,
K. W. Baldwin,
K. W. West
Abstract:
Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and the data are analyzed according to recent theoretical work by e.g., Alekseev, Physical Review Letters 117,166601 (2016). Size-dependent and temperature dependent…
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Viscous fluid in an ultrahigh-mobility two-dimensional electron gas (2DEG) in GaAs/AlGaAs quantum wells is systematically studied through measurements of negative magnetoresistance (NMR) and photoresistance under microwave radiation, and the data are analyzed according to recent theoretical work by e.g., Alekseev, Physical Review Letters 117,166601 (2016). Size-dependent and temperature dependent NMR are found to conform to the theoretical predictions. In particular, transport of 2DEG with relatively weak Coulomb interaction (interparticle interaction parameter r_s<1) manifests a crossover between viscous liquid and viscous gas. The size dependence of microwave induced resistance oscillations and that of the '2nd harmonic' peak indicate that 2DEG in a moderate magnetic field should be regarded as viscous fluid as well. Our results suggest that the hydrodynamic effects must be considered in order to understand semiclassical electronic transport in a clean 2DEG.
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Submitted 20 May, 2022;
originally announced May 2022.
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Tunneling spectroscopic signatures of charge do** and associated Mott transition in $α$-RuCl${_3}$ in proximity to graphite
Authors:
Xiaohu Zheng,
Ke Jia,
Junhai Ren,
Chongli Yang,
Xingjun Wu,
Youguo Shi,
Katsumi Tanigaki,
Rui-Rui Du
Abstract:
The layered Mott insulator $α$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on few-layer $α$-RuCl${_3}$ using a scanning tunneling microscopy/spectroscopy. Characteristic tunneling spectra were detected on $α$-RuCl${_3}$ layers in proximity to graphite.…
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The layered Mott insulator $α$-RuCl${_3}$ has been extensively studied as a potential Kitaev quantum spin liquid candidate. Here, by constructing heterostructures with graphite, we employed electron tunneling measurements on few-layer $α$-RuCl${_3}$ using a scanning tunneling microscopy/spectroscopy. Characteristic tunneling spectra were detected on $α$-RuCl${_3}$ layers in proximity to graphite. In the single-layer $α$-RuCl${_3}$ in direct contact with graphite, distinct states in the Mott-gap regime were observed. The in-gap states are demonstrated to be closely related to the electron orbitals in $α$-RuCl${_3}$ and graphite, and to be sensitive to interfacial coupling, where a hybridization at the heterointerface is hypothesized. The in-gap states are also thought of as a charge reservoir for weakly do** the $α$-RuCl${_3}$ upper-layers. It demonstrated that the weak do** effect causes a considerable decrease in the Mott-gap within the upper-layers, suggesting that an unconventional Mott-transition is occurring in these layers. The results show that the heterostructure comprised of $α$-RuCl${_3}$ and graphite is a good platform for investigating the do** physics in $α$-RuCl${_3}$. Therefore, tunneling into such a doped system is a useful probe for studying otherwise insulating spin-liquid candidates.
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Submitted 5 May, 2023; v1 submitted 1 May, 2022;
originally announced May 2022.
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Quantum sensing and imaging of spin-orbit-torque-driven spin dynamics in noncollinear antiferromagnet Mn3Sn
Authors:
Gerald Q. Yan,
Senlei Li,
Hanyi Lu,
Mengqi Huang,
Yuxuan Xiao,
Luke Wernert,
Jeffrey A. Brock,
Eric E. Fullerton,
Hua Chen,
Hailong Wang,
Chunhui Rita Du
Abstract:
Novel noncollinear antiferromagnets with spontaneous time-reversal symmetry breaking, nontrivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics and enormous promise in technological applications. One of the central focuses in this emerging field is exploring the relationship between the microscopic magne…
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Novel noncollinear antiferromagnets with spontaneous time-reversal symmetry breaking, nontrivial band topology, and unconventional transport properties have received immense research interest over the past decade due to their rich physics and enormous promise in technological applications. One of the central focuses in this emerging field is exploring the relationship between the microscopic magnetic structure and exotic material properties. Here, the nanoscale imaging of both spin-orbit-torque-induced deterministic magnetic switching and chiral spin rotation in noncollinear antiferromagnet Mn3Sn films using nitrogen-vacancy (NV) centers is reported. Direct evidence of the off-resonance dipole-dipole coupling between the spin dynamics in Mn3Sn and proximate NV centers is also demonstrated with NV relaxometry measurements. These results demonstrate the unique capabilities of NV centers in accessing the local information of the magnetic order and dynamics in these emergent quantum materials and suggest new opportunities for investigating the interplay between topology and magnetism in a broad range of topological magnets.
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Submitted 22 March, 2022;
originally announced March 2022.
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Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride
Authors:
Mengqi Huang,
**gcheng Zhou,
Di Chen,
Hanyi Lu,
Nathan J. McLaughlin,
Senlei Li,
Mohammed Alghamdi,
Dziga Djugba,
**g Shi,
Hailong Wang,
Chunhui Rita Du
Abstract:
Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking a…
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Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems.
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Submitted 27 December, 2021;
originally announced December 2021.
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Quantum Imaging of Magnetic Phase Transitions and Spin Fluctuations in Intrinsic Magnetic Topological Nanoflakes
Authors:
Nathan J. McLaughlin,
Chaowei Hu,
Mengqi Huang,
Shu Zhang,
Hanyi Lu,
Hailong Wang,
Yaroslav Tserkovnyak,
Ni Ni,
Chunhui Rita Du
Abstract:
Topological materials featuring exotic band structures, unconventional current flow patterns, and emergent organizing principles offer attractive platforms for the development of next-generation transformative quantum electronic technologies. The family of MnBi2Te4 (Bi2Te3)n materials is naturally relevant in this context due to their nontrivial band topology, tunable magnetism, and recently disco…
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Topological materials featuring exotic band structures, unconventional current flow patterns, and emergent organizing principles offer attractive platforms for the development of next-generation transformative quantum electronic technologies. The family of MnBi2Te4 (Bi2Te3)n materials is naturally relevant in this context due to their nontrivial band topology, tunable magnetism, and recently discovered extraordinary quantum transport behaviors. Despite numerous pioneering studies, to date, the local magnetic properties of MnBi2Te4 (Bi2Te3)n remain an open question, hindering a comprehensive understanding of their fundamental material properties. Exploiting nitrogen-vacancy (NV) centers in diamond, we report nanoscale quantum imaging of magnetic phase transitions and spin fluctuations in exfoliated MnBi2Te4 (Bi2Te3)n flakes, revealing the underlying spin transport physics and magnetic domains at the nanoscale. Our results highlight the unique advantage of NV centers in exploring the magnetic properties of emergent quantum materials, opening new opportunities for investigating the interplay between topology and magnetism.
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Submitted 18 December, 2021;
originally announced December 2021.
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Long-Range Superconducting Proximity Effect in Nickel Nanowires
Authors:
Jue Jiang,
Weiwei Zhao,
Fei Wang,
Renzhong Du,
Ludi Miao,
Ke Wang,
Qi Li,
Cui-Zu Chang,
Moses H. W. Chan
Abstract:
When a ferromagnet is placed in contact with a superconductor, owing to incompatible spin order, the Cooper pairs from the superconductor cannot survive more than one or two nanometers inside the ferromagnet. This is confirmed in the measurements of ferromagnetic nickel (Ni) nanowires contacted by superconducting niobium (Nb) leads. However, when a 3 nm thick copper oxide (CuO) buffer layer made b…
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When a ferromagnet is placed in contact with a superconductor, owing to incompatible spin order, the Cooper pairs from the superconductor cannot survive more than one or two nanometers inside the ferromagnet. This is confirmed in the measurements of ferromagnetic nickel (Ni) nanowires contacted by superconducting niobium (Nb) leads. However, when a 3 nm thick copper oxide (CuO) buffer layer made by exposing an evaporated or a sputtered 3 nm Cu film to air, is inserted between the Nb electrodes and the Ni wire, the spatial extent of the superconducting proximity range is dramatically increased from 2 to a few tens of nanometers. Scanning transmission electron microscope study confirms the formation of a 3 nm thick CuO layer when an evaporated Cu film is exposed to air. Magnetization measurements of such a 3 nm CuO film on a SiO2/Si substrate and on Nb/SiO2/Si show clear evidence of ferromagnetism. One way to understand the long-range proximity effect in the Ni nanowire is that the CuO buffer layer with ferromagnetism facilitates the conversion of singlet superconductivity in Nb into triplet supercurrent along the Ni nanowires.
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Submitted 29 December, 2021; v1 submitted 16 July, 2021;
originally announced July 2021.
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Observation of Superconductivity Induced Ferromagnetism in an Fe-Chalcogenide Superconductor
Authors:
Nathan J. McLaughlin,
Hailong Wang,
Mengqi Huang,
Eric Lee-Wong,
Lunhui Hu,
Hanyi Lu,
Gerald Q. Yan,
G. D. Gu,
Congjun Wu,
Yi-Zhuang You,
Chunhui Rita Du
Abstract:
The interplay among topology, superconductivity, and magnetism promises to bring a plethora of exotic and unintuitive behaviors in emergent quantum materials. The family of Fe-chalcogenide superconductors FeTexSe1-x are directly relevant in this context due to their intrinsic topological band structure, high-temperature superconductivity, and unconventional pairing symmetry. Despite enormous promi…
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The interplay among topology, superconductivity, and magnetism promises to bring a plethora of exotic and unintuitive behaviors in emergent quantum materials. The family of Fe-chalcogenide superconductors FeTexSe1-x are directly relevant in this context due to their intrinsic topological band structure, high-temperature superconductivity, and unconventional pairing symmetry. Despite enormous promise and expectation, the local magnetic properties of FeTexSe1-x remain largely unexplored, which prevents a comprehensive understanding of their underlying material properties. Exploiting nitrogen vacancy (NV) centers in diamond, here we report nanoscale quantum sensing and imaging of magnetic flux generated by exfoliated FeTexSe1-x flakes, providing clear evidence of superconductivity-induced ferromagnetism in FeTexSe1-x. The coexistence of superconductivity and ferromagnetism in an established topological superconductor opens up new opportunities for exploring exotic spin and charge transport phenomena in quantum materials. The demonstrated coupling between NV centers and FeTexSe1-x may also find applications in develo** hybrid architectures for next-generation, solid-state-based quantum information technologies.
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Submitted 30 June, 2021;
originally announced June 2021.
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Spin Pum** of an Easy-Plane Antiferromagnet Enhanced by Dzyaloshinskii-Moriya Interaction
Authors:
Hailong Wang,
Yuxuan Xiao,
Mingda Guo,
Eric Lee-Wong,
Gerald Q. Yan,
Ran Cheng,
Chunhui Rita Du
Abstract:
Recently, antiferromagnets have received revived interest due to their significant potential for develo** next-generation ultrafast magnetic storage. Here we report dc spin pum** by the acoustic resonant mode in a canted easy-plane antiferromagnet α-Fe2O3 enabled by the Dzyaloshinskii-Moriya interaction. Systematic angle and frequency dependent measurements demonstrate that the observed spin p…
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Recently, antiferromagnets have received revived interest due to their significant potential for develo** next-generation ultrafast magnetic storage. Here we report dc spin pum** by the acoustic resonant mode in a canted easy-plane antiferromagnet α-Fe2O3 enabled by the Dzyaloshinskii-Moriya interaction. Systematic angle and frequency dependent measurements demonstrate that the observed spin pum** signals arise from resonance-induced spin injection and inverse spin Hall effect in α-Fe2O3/metal heterostructures, mimicking the behavior of spin pum** in conventional ferromagnet/nonmagnet systems. The pure spin current nature is further corroborated by reversal of the polarity of spin pum** signals when the spin detector is switched from platinum to tungsten which has an opposite sign of the spin Hall angle. Our results highlight the potential opportunities offered by the low-frequency acoustic resonant mode in canted easy-plane antiferromagnets for develo** next-generation, functional spintronic devices.
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Submitted 8 June, 2021; v1 submitted 5 April, 2021;
originally announced April 2021.
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Quantum engineering with hybrid magnonics systems and materials
Authors:
D. D. Awschalom,
C. H. R. Du,
R. He,
F. J. Heremans,
A. Hoffmann,
J. T. Hou,
H. Kurebayashi,
Y. Li,
L. Liu,
V. Novosad,
J. Sklenar,
S. E. Sullivan,
D. Sun,
H. Tang,
V. Tiberkevich,
C. Trevillian,
A. W. Tsen,
L. R. Weiss,
W. Zhang,
X. Zhang,
L. Zhao,
C. W. Zollitsch
Abstract:
Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering…
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Quantum technology has made tremendous strides over the past two decades with remarkable advances in materials engineering, circuit design and dynamic operation. In particular, the integration of different quantum modules has benefited from hybrid quantum systems, which provide an important pathway for harnessing the different natural advantages of complementary quantum systems and for engineering new functionalities. This review focuses on the current frontiers with respect to utilizing magnetic excitatons or magnons for novel quantum functionality. Magnons are the fundamental excitations of magnetically ordered solid-state materials and provide great tunability and flexibility for interacting with various quantum modules for integration in diverse quantum systems. The concomitant rich variety of physics and material selections enable exploration of novel quantum phenomena in materials science and engineering. In addition, the relative ease of generating strong coupling and forming hybrid dynamic systems with other excitations makes hybrid magnonics a unique platform for quantum engineering. We start our discussion with circuit-based hybrid magnonic systems, which are coupled with microwave photons and acoustic phonons. Subsequently, we are focusing on the recent progress of magnon-magnon coupling within confined magnetic systems. Next we highlight new opportunities for understanding the interactions between magnons and nitrogen-vacancy centers for quantum sensing and implementing quantum interconnects. Lastly, we focus on the spin excitations and magnon spectra of novel quantum materials investigated with advanced optical characterization.
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Submitted 5 February, 2021;
originally announced February 2021.
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Quantum Sensing of Spin Transport Properties of an Antiferromagnetic Insulator
Authors:
Hailong Wang,
Shu Zhang,
Nathan J. McLaughlin,
Benedetta Flebus,
Mengqi Huang,
Yuxuan Xiao,
Eric E. Fullerton,
Yaroslav Tserkovnyak,
Chunhui Rita Du
Abstract:
Antiferromagnetic insulators (AFIs) are of significant interest due to their potential to develop next-generation spintronic devices. One major effort in this emerging field is to harness AFIs for long-range spin information communication and storage. Here, we report a non-invasive method to optically access the intrinsic spin transport properties of an archetypical AFI α-Fe2O3 via nitrogen-vacanc…
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Antiferromagnetic insulators (AFIs) are of significant interest due to their potential to develop next-generation spintronic devices. One major effort in this emerging field is to harness AFIs for long-range spin information communication and storage. Here, we report a non-invasive method to optically access the intrinsic spin transport properties of an archetypical AFI α-Fe2O3 via nitrogen-vacancy (NV) quantum spin sensors. By NV relaxometry measurements, we successfully detect the time-dependent fluctuations of the longitudinal spin density of α-Fe2O3. The observed frequency dependence of the NV relaxation rate is in agreement with a theoretical model, from which an intrinsic spin diffusion constant of α-Fe2O3 is experimentally measured in the absence of external spin biases. Our results highlight the significant opportunity offered by NV centers in diagnosing the underlying spin transport properties in a broad range of high-frequency magnetic materials, which are challenging to access by more conventional measurement techniques.
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Submitted 8 November, 2020;
originally announced November 2020.
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Cryogen-free one hundred microKelvin refrigerator
Authors:
Jiaojie Yan,
Jianing Yao,
Vladimir Shvarts,
Rui-Rui Du,
Xi Lin
Abstract:
Temperature below 100 microKelvin is achieved in a customized cryogen-free dilution refrigerator with a copper-nuclear demagnetization stage. The lowest temperature of conduction electrons of the demagnetization stage is below 100 microKelvin as measured by a pulsed platinum NMR thermometer and the temperature can remain below 100 microKelvin for over 10 hours. An up to 9 T demagnetization magneti…
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Temperature below 100 microKelvin is achieved in a customized cryogen-free dilution refrigerator with a copper-nuclear demagnetization stage. The lowest temperature of conduction electrons of the demagnetization stage is below 100 microKelvin as measured by a pulsed platinum NMR thermometer and the temperature can remain below 100 microKelvin for over 10 hours. An up to 9 T demagnetization magnetic field and an up to 12 T research magnetic field can be controlled independently, provided by a coaxial room-temperature-bore cryogen-free magnet.
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Submitted 17 October, 2020; v1 submitted 9 October, 2020;
originally announced October 2020.
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Quantum Sensing of Insulator-to-Metal Transitions in a Mott Insulator
Authors:
Nathan J. McLaughlin,
Yoav Kalcheim,
Albert Suceava,
Hailong Wang,
Ivan K. Schuller,
Chunhui Rita Du
Abstract:
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, we report on NV-based local sensing of the electrically driven insulator-to-metal transition (IM…
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Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, we report on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. We studied the resistive switching properties of both pristine and ion-irradiated VO2 thin film devices by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically-driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs non-thermally, well below the transition temperature. Our results provide the first direct evidence for non-thermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.
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Submitted 7 September, 2020;
originally announced September 2020.
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Quantum Sensing of Spin Fluctuations of Magnetic Insulator Films with Perpendicular Anisotropy
Authors:
Eric Lee-Wong,
**jun Ding,
Xiaoche Wang,
Chuanpu Liu,
Nathan J. McLaughlin,
Hailong Wang,
Mingzhong Wu,
Chunhui Rita Du
Abstract:
Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have been widely applied to emerging quantum sensing, imaging, and network efforts, showing unprecedented field sensitivity and nanoscale spatial resolution. Many of these advantages derive from their excellent quantum-coherence, controllable entanglement, and high fidelity of operations, enabling opportunities to outperfor…
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Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have been widely applied to emerging quantum sensing, imaging, and network efforts, showing unprecedented field sensitivity and nanoscale spatial resolution. Many of these advantages derive from their excellent quantum-coherence, controllable entanglement, and high fidelity of operations, enabling opportunities to outperform the classical counterpart. Exploiting this cutting-edge quantum metrology, we report noninvasive measurement of intrinsic spin fluctuations of magnetic insulator thin films with a spontaneous out-of-plane magnetization. The measured field dependence of NV relaxation rates is well correlated to the variation of magnon density and band structure of the magnetic samples, which are challenging to access by the conventional magnetometry methods. Our results highlight the significant opportunities offered by NV centers in diagnosing the noise environment of functional magnetic elements, providing valuable information to design next-generation, high-density, and scalable spintronic devices.
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Submitted 7 September, 2020;
originally announced September 2020.
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Electrical Control of Coherent Spin Rotation of a Single-Spin Qubit
Authors:
Xiaoche Wang,
Yuxuan Xiao,
Chuanpu Liu,
Eric Lee-Wong,
Nathan J. McLaughlin,
Hanfeng Wang,
Mingzhong Wu,
Hailong Wang,
Eric E. Fullerton,
Chunhui Rita Du
Abstract:
Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. One of the critical challenges to develop NV-based quantum operation platforms results from the difficulty to locally address the qua…
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Nitrogen vacancy (NV) centers, optically-active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. One of the critical challenges to develop NV-based quantum operation platforms results from the difficulty to locally address the quantum spin states of individual NV spins in a scalable, energy-efficient manner. Here, we report electrical control of the coherent spin rotation rate of a single-spin qubit in NV-magnet based hybrid quantum systems. By utilizing electrically generated spin currents, we are able to achieve efficient tuning of magnetic dam** and the amplitude of the dipole fields generated by a micrometer-sized resonant magnet, enabling electrical control of the Rabi oscillation frequency of NV spins. Our results highlight the potential of NV centers in designing functional hybrid solid-state systems for next-generation quantum-information technologies. The demonstrated coupling between the NV centers and the propagating spin waves harbored by a magnetic insulator further points to the possibility to establish macroscale entanglement between distant spin qubits.
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Submitted 15 July, 2020;
originally announced July 2020.
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Nanoscale Detection of Magnon Excitations with Variable Wavevectors Through a Quantum Spin Sensor
Authors:
Eric Lee-Wong,
Ruolan Xue,
Feiyang Ye,
Andreas Kreisel,
Toeno van der Sar,
Amir Yacoby,
Chunhui Rita Du
Abstract:
We report the optical detection of magnons with a broad range of wavevectors in magnetic insulator Y3Fe5O12 thin films by proximate nitrogen-vacancy (NV) single-spin sensors. Through multi-magnon scattering processes, the excited magnons generate fluctuating magnetic fields at the NV electron spin resonance frequencies, which accelerate the relaxation of NV spins. By measuring the variation of the…
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We report the optical detection of magnons with a broad range of wavevectors in magnetic insulator Y3Fe5O12 thin films by proximate nitrogen-vacancy (NV) single-spin sensors. Through multi-magnon scattering processes, the excited magnons generate fluctuating magnetic fields at the NV electron spin resonance frequencies, which accelerate the relaxation of NV spins. By measuring the variation of the emitted spin-dependent photoluminescence of the NV centers, magnons with variable wavevectors up to ~ 5 x 10^7 m-1 can be optically accessed, providing an alternative perspective to reveal the underlying spin behaviors in magnetic systems. Our results highlight the significant opportunities offered by NV single-spin quantum sensors in exploring nanoscale spin dynamics of emergent spintronic materials.
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Submitted 23 April, 2020;
originally announced April 2020.
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Three-state Majority-Vote Model on Barabási-Albert and Cubic Networks and the Unitary Relation for Critical Exponents
Authors:
André L. M. Vilela,
Bernardo J. Zubillaga,
Chao Wang,
Minggang Wang,
Rui** Du,
H. Eugene Stanley
Abstract:
We investigate the three-state majority-vote model with noise on scale-free and regular networks. In this model, an individual selects an opinion equal to the opinion of the majority of its neighbors with probability $1 - q$ and opposite to it with probability $q$. The parameter $q$ is called the noise parameter of the model. We build a network of interactions where $z$ neighbors are selected by e…
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We investigate the three-state majority-vote model with noise on scale-free and regular networks. In this model, an individual selects an opinion equal to the opinion of the majority of its neighbors with probability $1 - q$ and opposite to it with probability $q$. The parameter $q$ is called the noise parameter of the model. We build a network of interactions where $z$ neighbors are selected by each added site in the system, yielding a preferential attachment network with degree distribution $k^{-λ}$, where $λ\sim 3$. In this work, $z$ is called growth parameter. Using finite-size scaling analysis, we show that the critical exponents associated with the magnetization and magnetic susceptibility add up to unity when a volumetric scaling is used, regardless of the dimension of the network of interactions. Using Monte Carlo simulations, we calculate the critical noise parameter $q_c$ as a function of $z$ for the scale-free networks and obtain the phase diagram of the model. We find that the critical noise is an increasing function of the growth parameter $z$, and we define and verify numerically the unitary relation $\upsilon$ for the critical exponents by calculating $β/\barν$, $γ/\barν$ and $1/\barν$ for several values of the network parameter $z$. We also obtain the critical noise and the critical exponents for the two and three-state majority-vote model on cubic lattices networks where we illustrate the application of the unitary relation with a volumetric scaling.
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Submitted 11 May, 2019;
originally announced May 2019.
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Anomalous Conductance Oscillations in the Hybridization Gap of InAs/GaSb Quantum Wells
Authors:
Zhongdong Han,
Tingxin Li,
Long Zhang,
Gerard Sullivan,
Rui-Rui Du
Abstract:
We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the resistance. Characteristically, the in-gap oscillation frequency is higher than the Shubnikov-de Haas oscillation close to the conduction band edge in the metallic…
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We observe the magnetic oscillation of electric conductance in the two-dimensional InAs/GaSb quantum spin Hall insulator. Its insulating bulk origin is unambiguously demonstrated by the antiphase oscillations of the conductance and the resistance. Characteristically, the in-gap oscillation frequency is higher than the Shubnikov-de Haas oscillation close to the conduction band edge in the metallic regime. The temperature dependence shows both thermal activation and smearing effects, which cannot be described by the Lifshitz-Kosevich theory. A two-band Bernevig-Hughes-Zhang model with a large quasiparticle self-energy in the insulating regime is proposed to capture the main properties of the in-gap oscillations.
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Submitted 10 May, 2019;
originally announced May 2019.
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Resistive signature of excitonic coupling in an electron-hole double layer with a middle barrier
Authors:
Xingjun Wu,
Wenkai Lou,
Kai Chang,
Gerard Sullivan,
Rui-Rui Du
Abstract:
We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier such that the interlayer tunneling is negligibly small. By using independent-layer contacts we measure the transport tensor \r{ho}_xx and \r{ho}_xy tha…
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We study the interlayer scattering mediated by long-range Coulomb interaction between electrons (density n) and holes (p) in a double-layer system. The gated device is made of InAs (e) and InGaSb (h) quantum wells separated by a AlSb middle barrier such that the interlayer tunneling is negligibly small. By using independent-layer contacts we measure the transport tensor \r{ho}_xx and \r{ho}_xy that are solely from the InAs layer, while swee** p in the InGaSb layer. We found a strongly enhanced resistive scattering signal as the carrier densities approach a total charge neutrality, n = p, which cannot be described by the Fermi-liquid theory. Results of data analysis for density, temperature, and magnetic field dependences are consistent with the emergence of excitonic coupling between the two layers, stressing the dominance of Coulomb interaction even in the presence of disorder.
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Submitted 10 March, 2019;
originally announced March 2019.
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Thermopower and Nernst measurements in a half-filled lowest Landau level
Authors:
Xiaoxue Liu,
Tingxin Li,
Po Zhang,
L. N. Pfeiffer,
K. W. West,
Chi Zhang,
Rui-Rui Du
Abstract:
Motivated by recent proposal by Potter et al. [Phys. Rev. X 6, 031026 (2016)] concerning possible thermoelectric signatures of Dirac composite fermions, we perform a systematic experimental study of thermoelectric transport of an ultrahigh-mobility GaAs/AlxGa1-xAs two dimensional electron system at filling factor v = 1/2. We demonstrate that the thermopower Sxx and Nernst Sxy are symmetric and ant…
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Motivated by recent proposal by Potter et al. [Phys. Rev. X 6, 031026 (2016)] concerning possible thermoelectric signatures of Dirac composite fermions, we perform a systematic experimental study of thermoelectric transport of an ultrahigh-mobility GaAs/AlxGa1-xAs two dimensional electron system at filling factor v = 1/2. We demonstrate that the thermopower Sxx and Nernst Sxy are symmetric and anti-symmetric with respect to B = 0 T, respectively. The measured properties of thermopower Sxx at v = 1/2 are consistent with previous experimental results. The Nernst signals Sxy of v = 1/2, which have not been reported previously, are non-zero and show a power law relation with temperature in the phonon-drag dominant region. In the electron-diffusion dominant region, the Nernst signals Sxy of v = 1/2 are found to be significantly smaller than the linear temperature dependent values predicted by Potter et al., and decreasing with temperature faster than linear dependence.
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Submitted 9 June, 2018;
originally announced June 2018.
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Microwave Photocurrent from the Helical Edge state of InAs/GaInSb Bilayers
Authors:
Jie Zhang,
Tingxin Li,
Rui-Rui Du,
Gerard Sullivan
Abstract:
We measure microwave photocurrent in devices made from InAs/GaInSb bilayers where both insulating bulk state and conducting edge state were observed in the inverted-band regime, consistent with the theoretical prediction for a quantum spin Hall (QSH) insulator. It has been theoretically proposed that microwave photocurrent could be a unique probe in studying the properties of QSH edge states. To d…
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We measure microwave photocurrent in devices made from InAs/GaInSb bilayers where both insulating bulk state and conducting edge state were observed in the inverted-band regime, consistent with the theoretical prediction for a quantum spin Hall (QSH) insulator. It has been theoretically proposed that microwave photocurrent could be a unique probe in studying the properties of QSH edge states. To distinguish possible photoresponse between bulk state and helical edge state, we prepare Hall bar and Corbino disk from the same wafer. Results show that the Corbino disk samples have a negligible photocurrent in the bulk gap while clear photocurrent signals from the Hall bar samples are observed. This finding suggests that the photocurrent may carry information concerning the electronic properties of the edge states.
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Submitted 9 June, 2018;
originally announced June 2018.
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Stability of the 5/2 Fractional Quantum Hall State in a Corbino Disc Sample with In-plane Electric Fields
Authors:
Zheyi Zhu,
Pengjie Wang,
Hailong Fu,
L. N. Pfeiffer,
K. W. West,
Rui-Rui Du,
Xi Lin
Abstract:
Among the various geometries to study the fractional quantum Hall effect in two dimensional electron gas, the Corbino disc owns the advantage to probe the bulk properties directly. In this work we explore the influence of in-plane electric fields on the stability of the 5/2 fractional quantum Hall state realized in Corbino geometry. The effect of weak electric fields is investigated at ultra-low t…
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Among the various geometries to study the fractional quantum Hall effect in two dimensional electron gas, the Corbino disc owns the advantage to probe the bulk properties directly. In this work we explore the influence of in-plane electric fields on the stability of the 5/2 fractional quantum Hall state realized in Corbino geometry. The effect of weak electric fields is investigated at ultra-low temperatures in order to compare with a theoretical proposal of enhanced Pfaffian state under weak electric fields.
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Submitted 4 February, 2018;
originally announced February 2018.
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Simultaneous Measurements of Microwave Photoresistance and Cyclotron Reflection in the Multi-Photon Regime
Authors:
Jie Zhang,
Rui-Rui Du,
L. N. Pfeiffer,
K. W. West
Abstract:
We simultaneously measure photoresistance with electrical transport and plasmon-cyclotron resonance (PCR) using microwave reflection spectroscopy in high mobility GaAs/AlGaAs quantum wells under a perpendicular magnetic field. Multi-photon transitions are revealed as sharp peaks in the resistance and the cyclotron reflection on samples with various carrier densities. Our main finding is that plasm…
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We simultaneously measure photoresistance with electrical transport and plasmon-cyclotron resonance (PCR) using microwave reflection spectroscopy in high mobility GaAs/AlGaAs quantum wells under a perpendicular magnetic field. Multi-photon transitions are revealed as sharp peaks in the resistance and the cyclotron reflection on samples with various carrier densities. Our main finding is that plasmon coupling is relevant in the cyclotron reflection spectrum but has not been observed in the electrical conductivity signal. We discuss possible mechanisms relevant to reflection or dc conductivity signal to explain this discrepancy. We further confirm a trend that higher order multi-photon features can be observed using higher carrier density samples.
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Submitted 25 September, 2017;
originally announced September 2017.
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Proximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures
Authors:
Wenqing Dai,
Anthony Richardella,
Renzhong Du,
Weiwei Zhao,
Xin Liu,
C. X. Liu,
Song-Hsun Huang,
Raman Sankar,
Fangcheng Chou,
Nitin Samarth,
Qi Li
Abstract:
Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi2Se3 was observed in the spectra, which decreased with increasing Bi2Se3 layer thickness, consistent with the proximity ef…
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Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi2Se3 was observed in the spectra, which decreased with increasing Bi2Se3 layer thickness, consistent with the proximity effect in the bulk states of Bi2Se3 induced by NbSe2. At very low temperatures, an extra point contact feature which may correspond to a second energy gap appeared in the spectrum. For a 16 quintuple layer Bi2Se3 on NbSe2 sample, the bulk state gap value near the top surface is ~ 159 μeV, while the second gap value is ~ 120 μeV at 40 mK. The second gap value decreased with increasing Bi2Se3 layer thickness, but the ratio between the second gap and the bulk state gap remained about the same for different Bi2Se3 thicknesses. It is plausible that this is due to superconductivity in Bi2Se3 topological surface states induced through the bulk states. The two induced gaps in the PCS measurement are consistent with the three-dimensional bulk state and the two-dimensional surface state superconducting gaps observed in the angle-resolved photoemission spectroscopy (ARPES) measurement.
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Submitted 3 August, 2017;
originally announced August 2017.
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Low-Temperature Conductivity of Weakly Interacting Quantum Spin Hall Edges in Strained-Layer InAs/GaInSb
Authors:
Tingxin Li,
Pengjie Wang,
Gerard Sullivan,
Xi Lin,
Rui-Rui Du
Abstract:
We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetores…
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We report low-temperature transport measurements in strained InAs/Ga0.68In0.32Sb quantum wells, which supports time-reversal symmetry-protected helical edge states. The temperature and bias voltage dependence of the helical edge conductance for devices of various sizes are consistent with the theoretical expectation of a weakly interacting helical edge state. Moreover, we found that the magnetoresistance of the helical edge states is related to the edge interaction effect and the disorder strength.
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Submitted 11 December, 2017; v1 submitted 27 July, 2017;
originally announced July 2017.