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Inducing ferroelectricity in NH$_4$I and NH$_4$Br via partial replacement of protons by deuterons
Authors:
Miao Miao Zhao,
Lei Meng,
Yi Yang Xu,
Na Du,
Fei Yen
Abstract:
While all of the polymorphs of NH$_4$I and NH$_4$Br are non-polar, a reversible electric polarization is established in the ordered $γ$ phases of (NH$_4$)$_{0.73}$(ND$_4$)$_{0.27}$I and (NH$_4$)$_{0.84}$(ND$_4$)$_{0.16}$Br (where D is $^2$H) via $dc$ electric fields. The presence of two groups of orbital magnetic moments appears to be responsible for the asymmetric lattice distortions. Our finding…
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While all of the polymorphs of NH$_4$I and NH$_4$Br are non-polar, a reversible electric polarization is established in the ordered $γ$ phases of (NH$_4$)$_{0.73}$(ND$_4$)$_{0.27}$I and (NH$_4$)$_{0.84}$(ND$_4$)$_{0.16}$Br (where D is $^2$H) via $dc$ electric fields. The presence of two groups of orbital magnetic moments appears to be responsible for the asymmetric lattice distortions. Our findings provide an alternative pathway for hydrogen-based materials to potentially add a ferroelectric functionality.
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Submitted 24 May, 2024;
originally announced May 2024.
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Determining the chemical composition of diamagnetic mixed solids via measurements of the magnetic susceptibility
Authors:
Miao Miao Zhao,
Yang Yang,
Na Du,
Yu Ying Zhu,
Peng Ren,
Fei Yen
Abstract:
Mixed solid compounds are employed in a vast array of applications so an accurate determination of their chemical compositions is of crucial importance. All current characterization methods require specially-treated samples so the availability of a more practical method with similar accuracy should alleviate the quantification process. In this work, we show how the do** concentration $δ$ (or iso…
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Mixed solid compounds are employed in a vast array of applications so an accurate determination of their chemical compositions is of crucial importance. All current characterization methods require specially-treated samples so the availability of a more practical method with similar accuracy should alleviate the quantification process. In this work, we show how the do** concentration $δ$ (or isotope concentration) of a mixed solid compound in powdered form, where both parent compounds are diamagnetic, can be obtained from the measurement of the mass magnetization. We exploit the additive nature of the molar magnetic susceptibility $χ_{Mol}$ and molar mass to construct two equations with the same two unknowns in the $χ_{Mol}$ vs. $δ$ space to simultaneously solve $χ_{Mol}$ and $δ$ of a mixed solid. Eight examples are provided to show the wide applicability of this method: NH$_{4(1-δ)}$D$_{4δ}$Br (where D = $^2$H), NH$_4$I$_{1-δ}$Br$_δ$, (NH$_4$H$_2$)$_{1-δ}$(ND$_4$D$_2$)$_δ$PO$_4$, C$_{48}$H$_{22+6δ}$Br$_{6(1-δ)}$O$_{32}$Zr$_6$, [creatine]$_{1-δ}$[$_D$-glucose]$_δ$, [$_L$-glutamic acid]$_{1-δ}$[$_L$-leucine]$_δ$, [terephthalic acid]$_{1-δ}$[trimesic acid]$_δ$ and [p-terphenyl]$_{1-δ}$[triphenylphosphine]$_δ$. Experimental errors of ~1.2% were obtained for $δ$ from average sample masses of 16.6 mg in powdered form rendering the presented approach an attractive choice for characterizing the ratios of mixed solids.
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Submitted 2 April, 2024;
originally announced April 2024.
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Physics inspired compact modelling of BiFeO$_3$ based memristors for hardware security applications
Authors:
Sahitya Yarragolla,
Nan Du,
Torben Hemke,
Xianyue Zhao,
Ziang Chen,
Ilia Polian,
Thomas Mussenbrock
Abstract:
With the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the several available memristors, BiFe$\rm O_{3}$ (BFO)-based electroforming-free memristors have attracted considerable attention due to their excellent properties, such as long retention time, self-rectification, intrinsi…
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With the advent of the Internet of Things, nanoelectronic devices or memristors have been the subject of significant interest for use as new hardware security primitives. Among the several available memristors, BiFe$\rm O_{3}$ (BFO)-based electroforming-free memristors have attracted considerable attention due to their excellent properties, such as long retention time, self-rectification, intrinsic stochasticity, and fast switching. They have been actively investigated for use in physical unclonable function (PUF) key storage modules, artificial synapses in neural networks, nonvolatile resistive switches, and reconfigurable logic applications. In this work, we present a physics-inspired 1D compact model of a BFO memristor to understand its implementation for such applications (mainly PUFs) and perform circuit simulations. The resistive switching based on electric field-driven vacancy migration and intrinsic stochastic behaviour of the BFO memristor are modelled using the cloud-in-a-cell scheme. The experimental current-voltage characteristics of the BFO memristor are successfully reproduced. The response of the BFO memristor to changes in electrical properties, environmental properties (such as temperature) and stress are analyzed and consistent with experimental results.
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Submitted 7 October, 2022;
originally announced October 2022.
