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A Versatile Method of Engineering the Electron Wavefunction of Hybrid Quantum Devices
Authors:
Guoan Li,
Guang Yang,
Ting Lin,
M. Rossi,
G. Badawy,
Zhiyuan Zhang,
Xiaofan Shi,
Jiayu Shi,
Degui Qian,
Fang Lu,
Lin Gu,
An-Qi Wang,
Zhaozheng Lyu,
Guangtong Liu,
Fanming Qu,
Ziwei Dou,
Qinghua Zhang,
E. P. A. M. Bakkers,
M. P. Nowak,
P. Wójcik,
Li Lu,
Jie Shen
Abstract:
With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the stren…
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With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.
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Submitted 13 July, 2023;
originally announced July 2023.
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Interfering Josephson diode effect and magnetochiral anisotropy in Ta2Pd3Te5 asymmetric edge interferometer
Authors:
Yupeng Li,
Dayu Yan,
Yu Hong,
Haohao Sheng,
Anqi Wang,
Ziwei Dou,
Xingchen Guo,
Xiaofan Shi,
Zikang Su,
Zhaozheng Lyu,
Tian Qian,
Guangtong Liu,
Fanming Qu,
Kun Jiang,
Zhijun Wang,
Youguo Shi,
Zhu-An Xu,
Jiang** Hu,
Li Lu,
Jie Shen
Abstract:
Edge states in topological systems have attracted great interest due to their robustness and linear dispersions. Here a superconducting-proximitized edge interferometer is engineered on a topological insulator Ta2Pd3Te5 with asymmetric edges to realize the interfering Josephson diode effect (JDE), which hosts many advantages, such as the high efficiency as much as 73% at tiny applied magnetic fiel…
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Edge states in topological systems have attracted great interest due to their robustness and linear dispersions. Here a superconducting-proximitized edge interferometer is engineered on a topological insulator Ta2Pd3Te5 with asymmetric edges to realize the interfering Josephson diode effect (JDE), which hosts many advantages, such as the high efficiency as much as 73% at tiny applied magnetic fields with an ultra-low switching power around picowatt, and a giant interfering magnetochiral anisotropy with a maximal coefficient gamma = 1.2 x 10^{9} T^{-1}A^{-1}. As an important element to induce such JDE, the second-order harmonic in the current-phase relation is also experimentally confirmed by half-integer Shapiro steps. This edge interferometer offers a novel and effective method to enhance the overall performance of JDE and magnetochiral anisotropy, and boosts great potential applications for future superconducting quantum devices.
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Submitted 2 June, 2024; v1 submitted 14 June, 2023;
originally announced June 2023.
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Supercurrent Noise in a Phase-Biased Superconductor-Normal Ring in Thermal Equilibrium
Authors:
Ziwei Dou,
Xavier Ballu,
Quan Dong,
Yong **,
Richard Deblock,
Sandrine Autier-Laurent,
Sophie Guéron,
Hélène Bouchiat,
Meydi Ferrier
Abstract:
In superconductor-normal-superconductor (SNS) junctions, dissipationless supercurrent is mediated via Andreev bound states (ABSs) controlled by the phase difference between the two superconductors. Theory has long predicted significant fluctuations, and thus a noise, of such supercurrent in equilibrium, due to the thermal excitation between the ABSs. Via the fluctuation-dissipation theorem (FDT),…
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In superconductor-normal-superconductor (SNS) junctions, dissipationless supercurrent is mediated via Andreev bound states (ABSs) controlled by the phase difference between the two superconductors. Theory has long predicted significant fluctuations, and thus a noise, of such supercurrent in equilibrium, due to the thermal excitation between the ABSs. Via the fluctuation-dissipation theorem (FDT), this leads paradoxically to a dissipative conductance even in the zero frequency limit. In this article, we directly measure the supercurrent noise in a phase-biased SNS ring inductively coupled to a superconducting resonator. Using the same setup, we also measure its admittance and quantitatively demonstrate the FDT for any phase. The dissipative conductance shows an 1/T temperature dependence, in contrast to the Drude conductance of unproximitized metal. This is true even at phase $π$ where the Andreev spectrum is gapless. Supported by linear response theory, we attribute this to the enhanced current correlation between the ABSs symmetrical across the Fermi level. Our results provide insight into the origin of noise in hydrid superconducting devices which may be useful for probing topologically protected ABSs.
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Submitted 6 August, 2022;
originally announced August 2022.
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Phase-dependent dissipation and supercurrent of a graphene-superconductor ring under microwave irradiation
Authors:
Ziwei Dou,
Taro Wakamura,
Pauli Virtanen,
Nian-Jheng Wu,
Richard Deblock,
Sandrine Autier-Laurent,
Kenji Watanabe,
Takashi Taniguchi,
Sophie Guéron,
Hélène Bouchiat,
Meydi Ferrier
Abstract:
A junction with two superconductors coupled by a normal metal hosts Andreev bound states whose energy spectrum is phase-dependent and exhibits a minigap, resulting in a periodic supercurrent. Phase-dependent dissipation also appears at finite frequency due to relaxation of Andreev bound states. While dissipation and supercurrent versus phase have previously been measured near thermal equilibrium,…
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A junction with two superconductors coupled by a normal metal hosts Andreev bound states whose energy spectrum is phase-dependent and exhibits a minigap, resulting in a periodic supercurrent. Phase-dependent dissipation also appears at finite frequency due to relaxation of Andreev bound states. While dissipation and supercurrent versus phase have previously been measured near thermal equilibrium, their behavior in nonequilibrium is still elusive. By measuring the ac susceptibility of a graphene-superconductor junction under microwave irradiation, we find supercurrent response deviates from adiabatic ac Josephson effect as irradiation frequency is larger than relaxation rate. Notably, when irradiation frequency further increases above the minigap, the dissipation is enhanced at phase 0 where the minigap is largest and dissipation is minimum in equilibrium. We argue that this is evidence of the nonequilibrium distribution function which allows additional level transitions on the same side of the minigap. These results reveal that phase-dependent dissipation is more sensitive than supercurrent to microwave irradiation, and suggest a new method to investigate photon-assisted physics in proximitized superconducting system.
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Submitted 23 November, 2020; v1 submitted 14 November, 2020;
originally announced November 2020.
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Demonstration of Dissipative Quasihelical Edge Transport in Quantum Anomalous Hall Insulators
Authors:
Shu-Wei Wang,
Di Xiao,
Ziwei Dou,
Moda Cao,
Yi-Fan Zhao,
Nitin Samarth,
Cui-Zu Chang,
Malcolm R. Connolly,
Charles G. Smith
Abstract:
Do** a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible diss…
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Do** a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of the QAH samples usually does not vanish when the Hall resistance shows a good quantization. This has been interpreted as a result of the presence of possible dissipative conducting channels in magnetic TI samples. By studying the temperature- and magnetic field-dependence of the magnetoresistance of a magnetic TI sandwich heterostructure device, we demonstrate that the predominant dissipation mechanism in thick QAH insulators can switch between non-chiral edge states and residual bulk states in different magnetic field regimes. The interactions between bulk states, chiral edge states, and non-chiral edge states are also investigated. Our study provides a way to distinguish between the dissipation arising from the residual bulk states and non-chiral edge states, which is crucial for achieving true dissipationless transport in QAH insulators and for providing deeper insights into QAH-related phenomena.
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Submitted 18 September, 2020; v1 submitted 27 August, 2020;
originally announced August 2020.
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Direct visualization of ambipolar Mott transition in cuprate CuO2 planes
Authors:
Yong Zhong,
Jia-Qi Fan,
Ruifeng Wang,
ShuZe Wang,
Xuefeng Zhang,
Yuying Zhu,
Ziyuan Dou,
Xue-Qing Yu,
Yang Wang,
Ding Zhang,
**g Zhu,
Can-Li Song,
Xu-Cun Ma,
Qi-Kun Xue
Abstract:
Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott transition in Sr1-xLaxCuO2+y cuprate films that cover the entire electron- and hole-doped regimes. Tunneling conductance measurements directly on the cooper-o…
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Identifying the essence of doped Mott insulators is one of the major outstanding problems in condensed matter physics and the key to understanding the high-temperature superconductivity in cuprates. We report real space visualization of Mott transition in Sr1-xLaxCuO2+y cuprate films that cover the entire electron- and hole-doped regimes. Tunneling conductance measurements directly on the cooper-oxide (CuO2) planes reveal a systematic shift in the Fermi level, while the fundamental Mott-Hubbard band structure remains unchanged. This is further demonstrated by exploring atomic-scale electronic response of CuO2 to substitutional dopants and intrinsic defects in a sister compound Sr0.92Nd0.08CuO2. The results could be better explained in the framework of self-modulation do**, similar to that in semiconductor heterostructures, and form a basis for develo** any microscopic theories for cuprate superconductivity.
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Submitted 13 August, 2020; v1 submitted 28 April, 2019;
originally announced April 2019.
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Real-space observation of charge ordering in epitaxial La2-xSrxCuO4 films
Authors:
Yang Wang,
Yong Zhong,
Zhiling Luo,
Menghan Liao,
Ruifeng Wang,
Ziyuan Dou,
Qinghua Zhang,
Ding Zhang,
Lin Gu,
Can-Li Song,
Xu-Cun Ma,
Qi-Kun Xue
Abstract:
The cuprate superconductors exhibit ubiquitous instabilities toward charge-ordered states. These unusual electronic states break the spatial symmetries of the host crystal, and have been widely appreciated as essential ingredients for constructing a theory for high-temperature superconductivity in cuprates. Here we report real-space imaging of the do**-dependent charge orders in the epitaxial th…
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The cuprate superconductors exhibit ubiquitous instabilities toward charge-ordered states. These unusual electronic states break the spatial symmetries of the host crystal, and have been widely appreciated as essential ingredients for constructing a theory for high-temperature superconductivity in cuprates. Here we report real-space imaging of the do**-dependent charge orders in the epitaxial thin films of a canonical cuprate compound La2-xSrxCuO4 using scanning tunneling microscopy. As the films are moderately doped, we observe a crossover from incommensurate to commensurate (4a0, where a0 is the Cu-O-Cu distance) stripes. Furthermore, at lower and higher do** levels, the charge orders occur in the form of distorted Wigner crystal and grid phase of crossed vertical and horizontal stripes. We discuss how the charge orders are stabilized, and their interplay with superconductivity.
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Submitted 28 April, 2019;
originally announced April 2019.
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Surface symmetry breaking and disorder effects on superconductivity in perovskite BaBi3 epitaxial films
Authors:
Wen-Lin Wang,
Yi-Min Zhang,
Nan-Nan Luo,
Jia-Qi Fan,
Chong Liu,
Zi-Yuan Dou,
Lili Wang,
Wei Li,
Ke He,
Can-Li Song,
Yong Xu,
Wenhui Duan,
Xu-Cun Ma,
Qi-Kun Xue
Abstract:
The structural or electronic symmetry breaking of the host lattice is a recurrent phenomenon in many quantum materials, including superconductors. Yet, how these broken symmetry states affect the electronic pair wave function of superconductivity have been rarely elucidated. Here, using low-temperature scanning tunneling microscopy and first-principles calculations, we identify the broken rotation…
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The structural or electronic symmetry breaking of the host lattice is a recurrent phenomenon in many quantum materials, including superconductors. Yet, how these broken symmetry states affect the electronic pair wave function of superconductivity have been rarely elucidated. Here, using low-temperature scanning tunneling microscopy and first-principles calculations, we identify the broken rotational symmetry via stripe ordering on the (001) surface of perovskite BaBi3 films grown by molecular beam epitaxy, and show that it consequently leads to anisotropic superconductivity with twofold symmetry. In contrast, the structural disorder smears out the anisotropy of electron pairing and fills superconducting subgap density of states as the film thickness is reduced. A quasi-long range model of superconducting fluctuations is revealed to describe the tunneling conductance spectra of thin BaBi3 films well, and to exemplify how disorders contribute to the low-energy quasiparticle excitations in superconductors. Our findings help understand the effects of symmetry breaking states and disorders on superconductivity, particularly the existing tunneling conductance spectra there.
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Submitted 22 August, 2018;
originally announced August 2018.
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Imaging bulk and edge transport near the Dirac point in graphene moiré superlattices
Authors:
Ziwei Dou,
Sei Morikawa,
Alessandro Cresti,
Shu-Wei Wang,
Charles G. Smith,
Christos Melios,
Olga Kazakova,
Kenji Watanabe,
Takashi Taniguchi,
Satoru Masubuchi,
Tomoki Machida,
Malcolm R. Connolly
Abstract:
Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states a…
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Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behavior, their precise nature is unclear. We present a scanning gate microscopy study of moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity (~${10}^{10}$ $cm^{-2}$) and lower resistivity (~$10$ $kΩ$) at the Dirac point we observe current flow along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge do** is responsible for this effect. In addition, a device with low charge impurity (~$10^9$ $cm^{-2}$) and higher resistivity (~$100$ $kΩ$) shows subgap states in the bulk, consistent with the absence of shunting by edge currents.
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Submitted 21 November, 2017;
originally announced November 2017.
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Imaging ballistic carrier trajectories in graphene using scanning gate microscopy
Authors:
Sei Morikawa,
Ziwei Dou,
Shu-Wei Wang,
Charles Gorden Smith,
Kenji Watanabe,
Takashi Taniguchi,
Satoru Masubuchi,
Tomoki Machida,
Malcolm Richard Connolly
Abstract:
We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collecto…
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We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.
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Submitted 15 December, 2015; v1 submitted 2 August, 2015;
originally announced August 2015.
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Thermal strain-induced enhancement of electromagnetic properties in SiC-MgB2 composites
Authors:
R. Zeng S. X. Dou,
L. Lu,
W. X. Li,
J. H. Kim,
P. Munroe,
R. K. Zheng,
S. P. Ringer
Abstract:
Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The st…
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Strain engineering has been used to modify materials properties in ferroelectric, superconducting, and ferromagnetic thin films. The advantage of strain engineering is that it can achieve unexpected enhancement in certain properties, such as an increase in ferroelectric critical temperature, Tc, by 300 to 500K, with a minimum detrimental effect on the intrinsic properties of the material. The strain engineering has been largely applied to the materials in thin film form, where the strain is generated as a result of lattice mismatch between the substrate and component film or between layers in multilayer structures. Here, we report the observation of residual thermal stress/strain in dense SiC-MgB2 superconductor composites prepared by a diffusion method. We demonstrate that the thermal strain caused by the different thermal expansion coefficients between the MgB2 and SiC phases is responsible for the significant improvement in the critical current density, Jc, the irreversibility field, Hirr, and the upper critical field, Hc2, in the SiC-MgB2 composite where the carbon substitution level is low. In contrast to the common practice of improving the Jc and Hc2 of MgB2 through chemical substitution, by taking advantage of residual thermal strains we are able to design a composite, which shows only a small drop in Tc and little increase in resistivity, but a significant improvement over the Jc and Hc2 of MgB2. The present findings open up a new direction for manipulation of materials properties through strain engineering for materials in various forms.
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Submitted 7 August, 2008;
originally announced August 2008.
