Showing 1–50 of 186 results for author: Dong, J

Constraints on real space representations of Chern bands

Authors: Qingchen Li, Junkai Dong, Patrick J. Ledwith, Eslam Khalaf

Abstract: A Chern band is characterized by a Wannier obstruction indicating the absence of a basis of complete, orthogonal, and exponentially-localized states. Here, we study the properties of real space bases of a Chern band obtained by relaxing either exponential localization or orthogonality and completeness. This yields two distinct real space representations of a band with Chern number $C$: (i) a basis… ▽ More A Chern band is characterized by a Wannier obstruction indicating the absence of a basis of complete, orthogonal, and exponentially-localized states. Here, we study the properties of real space bases of a Chern band obtained by relaxing either exponential localization or orthogonality and completeness. This yields two distinct real space representations of a band with Chern number $C$: (i) a basis of complete orthogonal Wannier states which decay as power-law and (ii) a basis of exponentially-localized overcomplete non-orthogonal coherent states. For (i), we show that the power-law tail only depends on the Chern number and provide an explicit gauge choice leading to the universal asymptotic $w({\boldsymbol r}) \approx \frac{C e^{-i C \varphi_{\boldsymbol r}}}{2π|{\boldsymbol r}|^2}$ up to a normalized Bloch-periodic spinor. For (ii), we prove a rigorous lower bound on the spatial spread that can always be saturated for ideal bands. We provide an explicit construction of the maximally localized coherent state by map** the problem to a dual Landau level problem where the Berry curvature and trace of the quantum metric take the roles of an effective magnetic field and scalar potential, respectively. Our coherent state result rigorously bounds the spatial spread of any localized state constructed as a linear superposition of wavefunctions within the Chern band. Remarkably, we find that such bound does not generically scale with the Chern number and provide an explicit example of an exponentially localized state in a Chern $C$ band whose size does not increase with $|C|$. Our results show that band topology can be encoded in a real space description and set the stage for a systematic study of interaction effects in topological bands in real space. △ Less

Submitted 2 July, 2024; originally announced July 2024.

Comments: 5 pages + supplement

Effects of Strain Compensation on Electron Mobilities in InAs Quantum Wells Grown on InP(001)

Authors: C. P. Dempsey, J. T. Dong, I. Villar Rodriguez, Y. Gul, S. Chatterjee, M. Pendharkar, S. N. Holmes, M. Pepper, C. J. Palmstrøm

Abstract: InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and buffer layers. Increasing QW thickness has been shown t… ▽ More InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. The highest mobility QWs are limited by interfacial roughness scattering and alloy disorder scattering in the cladding and buffer layers. Increasing QW thickness has been shown to reduce the effect of both of these scattering mechanisms. However, for current state-of-the-art devices with As-based cladding and barrier layers, the critical thickness is limited to $\leq7$ nm. In this report, we demonstrate the use of strain compensation techniques in the InGaAs cladding layers to extend the critical thickness well beyond this limit. We induce tensile strain in the InGaAs cladding layers by reducing the In concentration from In$_{0.81}$Ga$_{0.19}$As to In$_{0.70}$Ga$_{0.30}$As and we observe changes in both the critical thickness of the well and the maximum achievable mobility. The peak electron mobility at 2 K is $1.16\times10^6$ cm$^2/$Vs, with a carrier density of $4.2\times10^{11}$ /cm$^2$. Additionally, we study the quantum lifetime and Rashba spin splitting in the highest mobility device as these parameters are critical to determine if these structures can be used in topologically nontrivial devices. △ Less

Submitted 27 June, 2024; originally announced June 2024.

Electric-field control of the perpendicular magnetization switching in ferroelectric/ferrimagnet heterostructures

Authors: Pengfei Liu, Tao Xu, Qi Liu, Juncai Dong, Ting Lin, Qinhua Zhang, Xiukai Lan, Yu Sheng, Chunyu Wang, Jia**g Pei, Hongxin Yang, Lin Gu, Kaiyou Wang

Abstract: Electric field control of the magnetic state in ferrimagnets holds great promise for develo** spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a ferrimagnet by manipulating the electric-field driven polarization within the Pb (Zr0.2Ti0.8) O3 (PZT)/CoGd heterostructure. Electron energy loss spectra and X-ray absorp… ▽ More Electric field control of the magnetic state in ferrimagnets holds great promise for develo** spintronic devices due to low power consumption. Here, we demonstrate a non-volatile reversal of perpendicular net magnetization in a ferrimagnet by manipulating the electric-field driven polarization within the Pb (Zr0.2Ti0.8) O3 (PZT)/CoGd heterostructure. Electron energy loss spectra and X-ray absorption spectrum directly verify that the oxygen ion migration at the PZT/CoGd interface associated with reversing the polarization causes the enhanced/reduced oxidation in CoGd. Ab initio calculations further substantiate that the migrated oxygen ions can modulate the relative magnetization of Co/Gd sublattices, facilitating perpendicular net magnetization switching. Our findings offer an approach to effectively control ferrimagnetic net magnetization, holding significant implications for ferrimagnetic spintronic applications. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Comments: 21 pages,4 figures

Crystal facet orientation and temperature dependence of charge and spin Hall effects in noncollinear antiferromagnet: A first-principles investigation

Authors: Meng Zhu, Xinlu Li, Fanxing Zheng, Jianting Dong, Ye Zhou, Kun Wu, Jia Zhang

Abstract: Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we comprehensively investigate the charge and spin Hall effects in representative noncollinear antiferromagnet Mn3Pt. Our study reveals that the Hall effects in nc-AFMs a… ▽ More Noncollinear antiferromagnets (nc-AFMs) have attracted increasing research attention in spintronics due to their unique spin structures and fascinating charge and spin transport properties. By using first-principles calculations, we comprehensively investigate the charge and spin Hall effects in representative noncollinear antiferromagnet Mn3Pt. Our study reveals that the Hall effects in nc-AFMs are critically dependent on the crystal facet orientation and temperature. For (001) orientated Mn3Pt, each charge and spin Hall conductivity element is comprised of both time reversal odd (T-odd) and even (T-even) contribution, associated with longitudinal conductivity, which leads to sizable and highly anisotropic Hall conductivity. The temperature dependence of charge and spin Hall conductivity has been elucidated by considering both phonon and spin disorder scattering. The scaling relations between Hall conductivity and longitudinal conductivity have also been investigated. The existence of prominent spin Hall effect in nc-AFMs may generate spin current with Sz spin polarization, which is advantageous for field free switching of perpendicular magnetization. Our work may provide unambiguous understanding on the charge and spin transport in noncollinear antiferromagnets and pave their way for applications in antiferromagnetic spintronics. △ Less

Submitted 26 May, 2024; originally announced May 2024.

Cryogenic growth of tantalum thin films for low-loss superconducting circuits

Authors: Teun A. J. van Schijndel, Anthony P. McFadden, Aaron N. Engel, Jason T. Dong, Wilson J. Yánez-Parreño, Manisha Parthasarathy, Raymond W. Simmonds, Christopher J. Palmstrøm

Abstract: Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize si… ▽ More Motivated by recent advancements highlighting Ta as a promising material in low-loss superconducting circuits and showing long coherence times in superconducting qubits, we have explored the effect of cryogenic temperatures on the growth of Ta and its integration in superconducting circuits. Cryogenic growth of Ta using a low temperature molecular beam epitaxy (MBE) system is found to stabilize single phase $α$-Ta on several different substrates, which include Al$\mathrm{_2}$O$\mathrm{_3}$(0001), Si(001), Si(111), SiN${_x}$, and GaAs(001). The substrates are actively cooled down to cryogenic temperatures and remain < 20 K during the Ta deposition. X-ray $θ$-2$θ$ diffraction after warming to room temperature indicates the formation of polycrystalline $α$-Ta. The 50 nm $α$-Ta films grown on Al$\mathrm{_2}$O$\mathrm{_3}$(0001) at a substrate manipulator temperature of 7 K have a room temperature resistivity ($\mathrm{ρ_{300 K}}$) of 13.4 $\mathrm{μΩ}$cm, a residual resistivity ratio (RRR) of 17.3 and a superconducting transition temperature (T$_C$) of 4.14 K, which are comparable to bulk values. In addition, atomic force microscopy (AFM) indicates that the film grown at 7 K with an RMS roughness of 0.45 nm was significantly smoother than the one grown at room temperature. Similar properties are found for films grown on other substrates. Results for films grown at higher substrate manipulator temperatures show higher $\mathrm{ρ_{300 K}}$, lower RRR and Tc, and increased $β$-Ta content. Coplanar waveguide resonators with a gap width of 3 $\mathrmμ$m fabricated from cryogenically grown Ta on Si(111) and Al$\mathrm{_2}$O$\mathrm{_3}$(0001) show low power Q$_i$ of 1.9 million and 0.7 million, respectively, indicating polycrystalline $α$-Ta films may be promising for superconducting qubit applications even though they are not fully epitaxial. △ Less

Submitted 20 May, 2024; originally announced May 2024.

Enhanced mobility of ternary InGaAs quantum wells through digital alloying

Authors: Jason T. Dong, Yilmaz Gul, Aaron N. Engel, Teun A. J. van Schijndel, Connor P. Dempsey, Michael Pepper, Christopher J. Palmstrøm

Abstract: High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering withi… ▽ More High In content InGaAs quantum wells (In $\geq$ 75%) are potentially useful for topological quantum computing and spintronics applications. In high mobility InGaAs quantum wells, alloy disorder scattering is a limiting factor. In this report, we demonstrate that by growing the InGaAs quantum wells as a digital alloy, or a short period superlattice, we can reduce the alloy disorder scattering within the quantum well and increase the peak 2 K electron mobility to 545,000 cm^2/V s, which is the highest reported mobility for high In content InGaAs quantum wells to the best of the authors' knowledge. Our results demonstrate that the digital alloy approach can be used to increase the mobility of quantum wells in random alloy ternary materials. △ Less

Submitted 29 March, 2024; v1 submitted 25 March, 2024; originally announced March 2024.

A Processing Route to Chalcogenide Perovskites Alloys with Tunable Band Gap via Anion Exchange

Authors: Kevin Ye, Ida Sadeghi, Michael Xu, Jack Van Sambeek, Tao Cai, Jessica Dong, Rishabh Kothari, James M. LeBeau, R. Jaramillo

Abstract: We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photocondu… ▽ More We demonstrate synthesis of BaZr(S,Se)3 chalcogenide perovskite alloys by selenization of BaZrS3 thin films. The anion-exchange process produces films with tunable composition and band gap without changing the orthorhombic perovskite crystal structure or the film microstructure. The direct band gap is tunable between 1.5 and 1.9 eV. The alloy films made in this way feature 100x stronger photoconductive response and a lower density of extended defects, compared to alloy films made by direct growth. The perovskite structure is stable in high-selenium-content thin films with and without epitaxy. The manufacturing-compatible process of selenization in H2Se gas may spur the development of chalcogenide perovskite solar cell technology. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Anomalous Hall Crystals in Rhombohedral Multilayer Graphene II: General Mechanism and a Minimal Model

Authors: Tomohiro Soejima, Junkai Dong, Taige Wang, Tianle Wang, Michael P. Zaletel, Ashvin Vishwanath, Daniel E. Parker

Abstract: We propose a minimal "three-patch model" for the anomalous Hall crystal (AHC), a topological electronic state that spontaneously breaks both time-reversal symmetry and continuous translation symmetry. The proposal for this state is inspired by the recently observed integer and fractional quantum Hall states in rhombohedral multilayer graphene at zero magnetic field. There, interaction effects appe… ▽ More We propose a minimal "three-patch model" for the anomalous Hall crystal (AHC), a topological electronic state that spontaneously breaks both time-reversal symmetry and continuous translation symmetry. The proposal for this state is inspired by the recently observed integer and fractional quantum Hall states in rhombohedral multilayer graphene at zero magnetic field. There, interaction effects appear to amplify the effects of a weak moiré potential, leading to the formation of stable, isolated Chern bands. It has been further shown that Chern bands are stabilized in mean field calculations even without a moiré potential, enabling a realization of the AHC state. Our model is built upon the dissection of the Brillouin zone into patches centered around high symmetry points. Within this model, the wavefunctions at high symmetry points fully determine the topology and energetics of the state. We extract two quantum geometrical phases of the non-interacting wavefunctions that control the stability of the topologically nontrivial AHC state. The model predicts that the AHC state wins over the topological trivial Wigner crystal in a wide range of parameters, and agrees very well with the results of full self-consistent Hartree-Fock calculations of the rhombohedral multilayer graphene Hamiltonian. △ Less

Submitted 8 March, 2024; originally announced March 2024.

Comments: 13+9 pages, 8+2 figures

Two-dimensional Kagome-in-Honeycomb materials (MN$_4$)$_3$C$_{32}$ (M=Pt or Mn)

Authors: **g** Dong, Miao Gao, Xun-Wang Yan, Fengjie Ma, Zhong-Yi Lu

Abstract: We propose two novel two-dimensional (2D) topological materials, (PtN$_4$)$_3$C$_{32}$ and (MnN$_4$)$_3$C$_{32}$, with a special geometry that we named as kagome-in-honeycomb (KIH) lattice structure, to illustrate the coexistence of the paradigmatic states of kagome physics, Dirac fermions and flat bands, that are difficult to be simultaneously observed in three-dimensional realistic systems. In s… ▽ More We propose two novel two-dimensional (2D) topological materials, (PtN$_4$)$_3$C$_{32}$ and (MnN$_4$)$_3$C$_{32}$, with a special geometry that we named as kagome-in-honeycomb (KIH) lattice structure, to illustrate the coexistence of the paradigmatic states of kagome physics, Dirac fermions and flat bands, that are difficult to be simultaneously observed in three-dimensional realistic systems. In such system, MN$_4$(M=Pt or Mn) moieties are embedded in honeycomb graphene sheet according to kagome lattice structure, thereby resulting in a KIH lattice. Using the first-principles calculations, we have systemically studied the structural, electronic, and topological properties of these two materials. In the absence of spin-orbit coupling (SOC), they both exhibit the coexistence of Dirac/quadratic-crossing cone and flat band near the Fermi level. When SOC is included, a sizable topological gap is opened at the Dirac/quadratic-crossing nodal point. For nonmagnetic (PtN$_4$)$_3$C$_{32}$, the system is converted into a $\mathbb{Z}_2$ topological quantum spin Hall insulator defined on a curved Fermi level, while for ferromagnetic (MnN$_4$)$_3$C$_{32}$, the material is changed from a half-semi-metal to a quantum anomalous Hall insulator with nonzero Chern number and nontrivial chiral edge states. Our findings not only predict a new family of 2D quantum materials, but also provide an experimentally feasible platform to explore the emergent kagome physics, topological quantum Hall physics, strongly correlated phenomena, and theirs fascinating applications. △ Less

Submitted 5 March, 2024; originally announced March 2024.

Comments: 6 figures. arXiv admin note: text overlap with arXiv:2207.03703

Determining the bulk and surface electronic structure of $α$-Sn/InSb(001) with spin- and angle-resolved photoemission spectroscopy

Authors: Aaron N. Engel, Paul J. Corbae, Hadass S. Inbar, Connor P. Dempsey, Shinichi Nishihaya, Wilson Yánez-Parreño, Yuhao Chang, Jason T. Dong, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Christopher J. Palmstrøm

Abstract: The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investig… ▽ More The surface and bulk states in topological materials have shown promise in many applications. Grey or $α$-Sn, the inversion symmetric analogue to HgTe, can exhibit a variety of these phases. However there is disagreement in both calculation and experiment over the exact shape of the bulk bands and the number and origin of the surface states. Using spin- and angle-resolved photoemission we investigate the bulk and surface electronic structure of $α$-Sn thin films on InSb(001) grown by molecular beam epitaxy. We find that there is no significant war** in the shapes of the bulk bands. We also observe the presence of only two surface states near the valence band maximum in both thin (13 bilayer) and thick (400 bilayer) films. In 50 bilayer films, these two surface states coexist with quantum well states. Surprisingly, both of these surface states are spin-polarized with orthogonal spin-momentum locking and opposite helicities. One of these states is the spin-polarized topological surface state and the other a spin resonance. Finally, the presence of another orthogonal spin-momentum locked topological surface state from a secondary band inversion is verified. Our work clarifies the electronic structure of $α$-Sn(001) such that better control of the electronic properties can be achieved. In addition, the presence of two spin-polarized surface states near the valence band maximum has important ramifications for the use of $α$-Sn in spintronics. △ Less

Submitted 1 March, 2024; originally announced March 2024.

Higher vortexability: zero field realization of higher Landau levels

Authors: Manato Fujimoto, Daniel E. Parker, Junkai Dong, Eslam Khalaf, Ashvin Vishwanath, Patrick Ledwith

Abstract: The rise of moiré materials has led to experimental realizations of integer and fractional Chern insulators in small or vanishing magnetic fields. At the same time, a set of minimal conditions sufficient to guarantee a Abelian fractional state in a flat band were identified, namely "ideal" or "vortexable" quantum geometry. Such vortexable bands share essential features with the lowest Landau level… ▽ More The rise of moiré materials has led to experimental realizations of integer and fractional Chern insulators in small or vanishing magnetic fields. At the same time, a set of minimal conditions sufficient to guarantee a Abelian fractional state in a flat band were identified, namely "ideal" or "vortexable" quantum geometry. Such vortexable bands share essential features with the lowest Landau level, while excluding the need for more fine-tuned aspects such as flat Berry curvature. A natural and important generalization is to ask if such conditions can be extended to capture the quantum geometry of higher Landau levels, particularly the first (1LL), where non-Abelian states at $ν= 1/2,2/5$ are known to be competitive. The possibility of realizing these states at zero magnetic field , and perhaps even more exotic ones, could become a reality if we could identify the essential structure of the 1LL in Chern bands. In this work, we introduce a precise definition of 1LL quantum geometry, along with a figure of merit that measures how closely a given band approaches the 1LL. We apply the definition to identify two models with 1LL structure -- a toy model of double bilayer twisted graphene and a more realistic model of strained Bernal graphene. △ Less

Submitted 19 March, 2024; v1 submitted 29 February, 2024; originally announced March 2024.

Comments: 12 pages, 5 figures

Strain Solitons in an Epitaxially Strained van der Waals-like Material

Authors: Jason T. Dong, Hadass S. Inbar, Connor P. Dempsey, Aaron N. Engel, Christopher J. Palmstrøm

Abstract: Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both predicted and observed. To date, strain solitons have only been observed in exfoliated crystals or mechanically strained bulk crystals. The lack of a scalable approa… ▽ More Strain solitons are quasi-dislocations that form in van der Waals materials to relieve the energy associated with lattice or rotational mismatch in the crystal. Novel and unusual electronic properties of strain solitons have been both predicted and observed. To date, strain solitons have only been observed in exfoliated crystals or mechanically strained bulk crystals. The lack of a scalable approach towards the generation of strain solitons poses a significant challenge in the study of and use of the properties of strain solitons. Here we report the formation of strain solitons with epitaxial growth of bismuth on an InSb (111)B substrate by molecular beam epitaxy. The morphology of the strain solitons for films of varying thickness is characterized with scanning tunneling microscopy and the local strain state is determined from the analysis of atomic resolution images. Bending in the solitons is attributed due to interactions with the interface, and large angle bending is associated with edge dislocations. Our results enable the scalable generation of strain solitons. △ Less

Submitted 23 January, 2024; originally announced January 2024.

Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice

Authors: Yalong Yuan, Le Liu, Jundong Zhu, **gwei Dong, Yanbang Chu, Fanfan Wu, Luojun Du, Kenji Watanabe, Takashi Taniguchi, Dongxia Shi, Guangyu Zhang, Wei Yang

Abstract: Double layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double layer system, composed of a large angle twisted double bilayer graphene (TDBG). We observe two different QOs at low temperature, one with a periodicity in carrier density (n), i.e. Shubnikov de Haas oscillation (SdHO) due to Landa… ▽ More Double layer quantum systems are promising platforms for realizing novel quantum phases. Here, we report a study of quantum oscillations (QOs) in a weakly coupled double layer system, composed of a large angle twisted double bilayer graphene (TDBG). We observe two different QOs at low temperature, one with a periodicity in carrier density (n), i.e. Shubnikov de Haas oscillation (SdHO) due to Landau quantization, and the other one in displacement field (D), resulting a grid pattern. We quantify the interlayer coupling strength by measuring the interlayer capacitance from the grid pattern with a capacitance model, revealing an electron hole asymmetry. At high temperature when SdHO are thermal smeared, we observe resistance peaks when LLs from two minivalleys in the moiré Brillion zone are aligned, regardless of carrier density; eventually, it results in a two fold increase of oscillating frequency in D, serving as a smoking gun evidence of the magneto intersubband oscillations (MISO) in a double layer system. The temperature dependence of MISO suggests electron-electron interaction between two minivalleys play a crucial rule in the scattering, and the scattering times obtained from MISO thermal dam** are found to be correlated with the interlayer coupling strength. Our study reveals an intriguing interplay among Landau quantization, moiré band structure, and scatterings. △ Less

Submitted 22 January, 2024; originally announced January 2024.

Growth and characterization of $α$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

Authors: Aaron N. Engel, Connor P. Dempsey, Hadass S. Inbar, Jason T. Dong, Shinichi Nishihaya, Yu Hao Chang, Alexei V. Fedorov, Makoto Hashimoto, Donghui Lu, Christopher J. Palmstrøm

Abstract: $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α… ▽ More $α$-Sn thin films can exhibit a variety of topologically non-trivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of $α$-Sn thin films. $α$-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant. By growing $α$-Sn via molecular beam epitaxy on the Sb-rich c(4$\times$4) surface reconstruction of InSb(001) rather than the In-rich c(8$\times$2), we demonstrate a route to substantially decrease and minimize this indium incorporation. The reduction in indium concentration allows for the study of the surface and bulk Dirac nodes in $α$-Sn via angle-resolved photoelectron spectroscopy without the common approaches of bulk do** or surface dosing, simplifying topological phase identification. The lack of indium incorporation is verified in angle-resolved and -integrated ultraviolet photoelectron spectroscopy as well as in clear changes in the Hall response. △ Less

Submitted 29 November, 2023; v1 submitted 27 November, 2023; originally announced November 2023.

Broad-Wavevector Spin Pum** of Flat-Band Magnons

Authors: **long Wang, Hanchen Wang, Jilei Chen, William Legrand, Peng Chen, Lutong Sheng, Jihao Xia, Guibin Lan, Yuelin Zhang, Rundong Yuan, **g Dong, Xiufeng Han, Jean-Philippe Ansermet, Haiming Yu

Abstract: We report the experimental observation of large spin pum** signals in YIG/Pt system driven by broad-wavevector spin-wave spin current. 280 nm-wide microwave inductive antennas offer broad-wavevector excitation which, in combination with quasi-flatband of YIG, allows a large number of magnons to participate in spin pum** at a given frequency. Through comparison with ferromagnetic resonance spin… ▽ More We report the experimental observation of large spin pum** signals in YIG/Pt system driven by broad-wavevector spin-wave spin current. 280 nm-wide microwave inductive antennas offer broad-wavevector excitation which, in combination with quasi-flatband of YIG, allows a large number of magnons to participate in spin pum** at a given frequency. Through comparison with ferromagnetic resonance spin pum**, we attribute the enhancement of the spin current to the multichromatic magnons. The high efficiency of spin current generation enables us to uncover nontrivial propagating properties in ultra-low power regions. Additionally, our study achieves the spatially separated detection of magnons, allowing the direct extraction of the decay length. The synergistic combination of the capability of broad-wavevector excitation, enhanced voltage signals, and nonlocal detection provides a new avenue for the electrical exploration of spin waves dynamics. △ Less

Submitted 15 November, 2023; originally announced November 2023.

Anomalous Hall Crystals in Rhombohedral Multilayer Graphene I: Interaction-Driven Chern Bands and Fractional Quantum Hall States at Zero Magnetic Field

Authors: Junkai Dong, Taige Wang, Tianle Wang, Tomohiro Soejima, Michael P. Zaletel, Ashvin Vishwanath, Daniel E. Parker

Abstract: Recent experiments on rhombohedral pentalayer graphene flakes with a substrate induced moiré potential have identified both Chern insulators and fractional Quantum Hall states in the absence of an applied magnetic field. Surprisingly, these states are observed in strong displacement fields where the effects of the moiré lattice are weak, and seem to be readily accessed without fine-tuning. To addr… ▽ More Recent experiments on rhombohedral pentalayer graphene flakes with a substrate induced moiré potential have identified both Chern insulators and fractional Quantum Hall states in the absence of an applied magnetic field. Surprisingly, these states are observed in strong displacement fields where the effects of the moiré lattice are weak, and seem to be readily accessed without fine-tuning. To address these experimental puzzles we study an interacting model of electrons in this geometry, first within the self-consistent Hartree-Fock (SCHF) approximation. We find an isolated Chern band with Chern number $|C|=1$, that moreover is relatively flat and shows good quantum geometry. Exact diagonalization and density matrix renormalization group methods at fractional filling establish the presence of fractional quantum anomalous Hall (FQAH) states. The $|C|=1$ band in SCHF is remarkably robust to varying microscopic parameters, and is also found in the $N_L=4$ and $N_L=6$ layer systems. Remarkably, it appears stable even to switching off the moiré potential, pointing to spontaneous breaking of translation symmetry. We term this topological crystalline state the ``anomalous Hall crystal" (AHC), and argue that it constitutes a general mechanism for creating stable Chern bands in rhombohedral graphene. Our work elucidates the physics behind the recent rhombohedral pentalayer graphene observations, predicts the appearance of the same phase in other systems, and opens the door to studying the interplay between electronic topology and spontaneous translation symmetry breaking. △ Less

Submitted 9 November, 2023; originally announced November 2023.

Comments: 5+9 pages, 4+4 figures

Microscopic model realization of $\boldsymbol{d}$-wave pseudospin current order in Sr$_{\boldsymbol{2}}$IrO$_{\boldsymbol{4}}$

Authors: **-Wei Dong, Yun-Peng Huang, Ziqiang Wang, Sen Zhou

Abstract: The $d$-wave pseudospin current order ($d$PSCO) with staggered circulating pseudospin current has been proposed as the hidden electronic order to describe the unexpected breaking of spatial symmetries in stoichiometric Sr$_{2}$IrO$_{4}$ and the unconventional pseudogap phenomena in electron doped Sr$_{2}$IrO$_{4}$. However, a microscopic model for the emergence of $d$PSCO is still lacking. The nea… ▽ More The $d$-wave pseudospin current order ($d$PSCO) with staggered circulating pseudospin current has been proposed as the hidden electronic order to describe the unexpected breaking of spatial symmetries in stoichiometric Sr$_{2}$IrO$_{4}$ and the unconventional pseudogap phenomena in electron doped Sr$_{2}$IrO$_{4}$. However, a microscopic model for the emergence of $d$PSCO is still lacking. The nearest neighbor Coulomb repulsion $V$, which is expected to be significant in Sr$_{2}$IrO$_{4}$ due to the large spatial extension of the Ir $5d$ orbitals, is capable of driving $d$PSCO on the mean-field level, albeit the latter is energetically degenerate to the staggered flux phase with circulating charge current. We find the in-plane anisotropy $Γ_2$ in the effective superexchange interaction between $J_\text{eff}={1\over 2}$ pseudospins, originating from the cooperative interplay between Hund's rule coupling and spin-orbit coupling of Ir $5d$ electrons, is able to lift the degeneracy and stabilize the pseudospin currents. The effective single-orbital model of $J_\text{eff}={1\over 2}$ electrons, including onsite Coulomb repulsion $U$, nearest neighbor Coulomb repulsion $V$, and the in-plane anisotropy $Γ_2$, is then studied. We obtain the mean-field ground states, analyze their properties, and determine the phase diagram of stoichiometric Sr$_{2}$IrO$_{4}$ in the plane spanned by $U$ and $V$ at a fixed $Γ_2$. We demonstrate the realization of $d$PSCO, and its competition and coexistence with antiferromagnetism. Remarkably, we find the coexistence of $d$PSCO and antiferromagnetism naturally leads to spin bond nematicity, with the spin directions of these three orders forming nontrivial chirality. Furthermore, we show that the emergence of the coexistent state and its chirality can be tuned by carrier do**. △ Less

Submitted 31 January, 2024; v1 submitted 3 October, 2023; originally announced October 2023.

Comments: 12 pages, 10 figures

Journal ref: Phys. Rev. B 109, 045121 (2024)

Anatomy of spin Hall effect in ferromagnetic metals

Authors: Fanxing Zheng, Jianting Dong, Xinlu Li, Meng Zhu, Ye Zhou, Jia Zhang

Abstract: The spin Hall effect in nonmagnetic materials has been intensively studied and became one of the most crucial spin-charge conversion mechanism in spintronics. However, the spin Hall effect in ferromagnetic metals has been less investigated and remains unclear. In this work, we investigate the spin Hall effect in representative ferromagnetic alloy by using first-principles calculations. We first cl… ▽ More The spin Hall effect in nonmagnetic materials has been intensively studied and became one of the most crucial spin-charge conversion mechanism in spintronics. However, the spin Hall effect in ferromagnetic metals has been less investigated and remains unclear. In this work, we investigate the spin Hall effect in representative ferromagnetic alloy by using first-principles calculations. We first clarify the spin Hall effect into three different types including conventional (CSHE), spin anomalous (SAHE) and magnetic spin Hall effect (MSHE) and then calculate the corresponding spin Hall conductivity and spin Hall angle for (Fe, Co, Ni)Pt, NiFe and CoFe alloy. We find the above three spin Hall mechanisms do coexist in ferromagnetic metals. Particularly, for Pt-based ferromagnetic alloy, a sizable conventional and magnetic spin Hall angles comparable to that of Pt have been predicted. The remarkable unconventional spin Hall effect in ferromagnetic metal may enrich the spin-charge conversion phenomena. For instance, the spin current generated by remarkable MSHE with out-of-plane spin-polarization should be helpful for field-free switching of perpendicular magnetization through spin-orbit torque effect. This work may stimulate future studies on the spin Hall effect in ferromagnetic metals and pave their promising applications for spin-charge conversion devices in spintronics. △ Less

Submitted 6 August, 2023; originally announced August 2023.

Dynamics of electronic states in the insulating Intermediate surface phase of 1T-TaS$_2$

Authors: **gwei Dong, Weiyan Qi, Dongbin Shin, Laurent Cario, Zhesheng Chen, Romain Grasset, Davide Boschetto, Mateusz Weis, Pierrick Lample, Ernest Pastor, Tobias Ritschel, Marino Marsi, Amina Taleb, Noejung Park, Angel Rubio, Evangelos Papalazarou, Luca Perfetti

Abstract: This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top of a metallic bulk. The weaker screening of Coulomb repulsion and stiffer Charge Density Wave (CDW) explain such resilience of a correlated insulator in the topm… ▽ More This article reports a comparative study of bulk and surface properties in the transition metal dichalcogenide 1T-TaS$_2$. When heating the sample, the surface displays an intermediate insulating phase that persists for $\sim 10$ K on top of a metallic bulk. The weaker screening of Coulomb repulsion and stiffer Charge Density Wave (CDW) explain such resilience of a correlated insulator in the topmost layers. Both time resolved ARPES and transient reflectivity are employed to investigate the dynamics of electrons and CDW collective motion. It follows that the amplitude mode is always stiffer at the surface and displays variable coupling to the Mott-Peierls band, stronger in the low temperature phase and weaker in the intermediate one. △ Less

Submitted 31 October, 2023; v1 submitted 12 July, 2023; originally announced July 2023.

Biorthogonal Dynamical Quantum Phase Transitions in Non-Hermitian Systems

Authors: Yecheng **g, Jian-Jun Dong, Yu-Yu Zhang, Zi-Xiang Hu

Abstract: By utilizing biorthogonal bases, we develop a comprehensive framework for studying biorthogonal dynamical quantum phase transitions in non-Hermitian systems. With the help of the previously overlooked associated state, we define the automatically normalized biorthogonal Loschmidt echo. This approach is capable of handling arbitrary non-Hermitian systems with complex eigenvalues and naturally elimi… ▽ More By utilizing biorthogonal bases, we develop a comprehensive framework for studying biorthogonal dynamical quantum phase transitions in non-Hermitian systems. With the help of the previously overlooked associated state, we define the automatically normalized biorthogonal Loschmidt echo. This approach is capable of handling arbitrary non-Hermitian systems with complex eigenvalues and naturally eliminates the negative value of Loschmidt rate obtained without the biorthogonal bases. Taking the non-Hermitian Su-Schrieffer-Heeger model as a concrete example, a $1/2$ change of dynamical topological order parameter in biorthogonal bases is observed which is not shown in self-normal bases. Furthermore, we discover that the periodicity of biorthogonal dynamical quantum phase transitions depends on whether the two-level subsystem at the critical momentum oscillates or reaches a steady state. △ Less

Submitted 31 May, 2024; v1 submitted 6 July, 2023; originally announced July 2023.

Comments: 7 pages, 4 figures; Supplemental Material

Journal ref: Phys. Rev. Lett. 132, 220402 (2024)

Composite Fermi Liquid at Zero Magnetic Field in Twisted MoTe$_2$

Authors: Junkai Dong, Jie Wang, Patrick J. Ledwith, Ashvin Vishwanath, Daniel E. Parker

Abstract: The pursuit of exotic phases of matter outside of the extreme conditions of a quantizing magnetic field has been a long standing quest of solid state physics. Recent experiments have observed spontaneous valley polarization and fractional Chern insulators (FCIs) in zero magnetic field in twisted bilayers of MoTe$_2$, at partial filling of the topological valence band ($ν=-2/3$ and $-3/5$). We stud… ▽ More The pursuit of exotic phases of matter outside of the extreme conditions of a quantizing magnetic field has been a long standing quest of solid state physics. Recent experiments have observed spontaneous valley polarization and fractional Chern insulators (FCIs) in zero magnetic field in twisted bilayers of MoTe$_2$, at partial filling of the topological valence band ($ν=-2/3$ and $-3/5$). We study the topological valence band at $\textit{half}$ filling, using exact diagonalization and density matrix renormalization group calculations. We discover a composite Fermi liquid (CFL) phase even at zero magnetic field that covers a large portion of the phase diagram centered around twist angle ${\sim}3.6^\circ$. The CFL is a non-Fermi liquid phase that shows metallic behavior despite the absence of Landau quasiparticles. We discuss experimental implications including the competition between the CFL and a Fermi liquid, which can be tuned with a displacement field. The topological valence band has excellent quantum geometry over a wide range of twist angles and a small bandwidth that is, remarkably, reduced by interactions for a range of angles. These key properties are responsible for stabilizing the exotic quantum Hall phases we find at zero field. Finally, we present an optical signature involving "extinguished" optical responses as a means to identify Chern bands with ideal quantum geometry. △ Less

Submitted 27 September, 2023; v1 submitted 2 June, 2023; originally announced June 2023.

Comments: 5+22 pages, 3+13 figures

Journal ref: Phys. Rev. Lett. 131, 136502 (2023)

Electron-infrared phonon coupling in ABC trilayer graphene

Authors: Xiaozhou Zan, Xiangdong Guo, Aolin Deng, Zhiheng Huang, Le Liu, Fanfan Wu, Yalong Yuan, Jiaojiao Zhao, Yalin Peng, Lu Li, Yangkun Zhang, Xiuzhen Li, Jundong Zhu, **gwei Dong, Dongxia Shi, Wei Yang, Xiaoxia Yang, Zhiwen Shi, Luojun Du, Qing Dai, Guangyu Zhang

Abstract: Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for… ▽ More Stacking order plays a crucial role in determining the crystal symmetry and has significant impacts on electronic, optical, magnetic, and topological properties. Electron-phonon coupling, which is central to a wide range of intriguing quantum phenomena, is expected to be intricately connected with stacking order. Understanding the stacking order-dependent electron-phonon coupling is essential for understanding peculiar physical phenomena associated with electron-phonon coupling, such as superconductivity and charge density waves. In this study, we investigate the effect of stacking order on electron-infrared phonon coupling in graphene trilayers. By using gate-tunable Raman spectroscopy and excitation frequency-dependent near-field infrared nanoscopy, we show that rhombohedral ABC-stacked trilayer graphene has a significantly stronger electron-infrared phonon coupling strength than the Bernal ABA-stacked trilayer graphene. Our findings provide novel insights into the superconductivity and other fundamental physical properties of rhombohedral ABC-stacked trilayer graphene, and can enable nondestructive and high-throughput imaging of trilayer graphene stacking order using Raman scattering. △ Less

Submitted 28 April, 2023; originally announced April 2023.

Observation of Fluctuation Spin Hall Effect in Antiferromagnet

Authors: Chi Fang, Caihua Wan, Xiaoyue Zhang, Satoshi Okamoto, Tianyi Ma, Jianying Qin, Xiao Wang, Chenyang Guo, **g Dong, Guoqiang Yu, Zhenchao Wen, Ning Tang, Stuart S. P. Parkin, Naoto Nagaosa, Yuan Lu, Xiufeng Han

Abstract: The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an e… ▽ More The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase-transition is proved as an effective mechanism to create an additional part of SHE, named as fluctuation spin Hall effect (FSHE). This FSHE enhances the SHA due to the AFM spin fluctuation between conduction electrons and local spins. We detect the FSHE with the inverse and direct spin Hall effect (ISHE and DSHE) set-up and their temperature (T) dependences in the Cr/MgO/Fe magnetic tunnel junctions (MTJs). The SHA is significantly enhanced when temperature is approached to the Néel temperature (T_N) and has a peak value of -0.34 at 200 K near T_N. This value is higher than the room-temperature value by 240% and comparable to that of heavy metals Ta and W. Furthermore, the spin Hall resistivity of Cr well fits the modeled T-dependence when T approaches T_N from low temperatures, implying the AFM spin fluctuation nature of strong SHA enhancement. Thus, this study demonstrates the critical spin fluctuation as a prospective way of increasing SHA and enriches the AFM material candidates for spin-orbitronic devices. △ Less

Submitted 26 April, 2023; originally announced April 2023.

Comments: 27 pages, 9 figures

Three-dimensional study of grain scale tensile twinning activity in Mg: A combination of microstructure characterization and mechanical modeling

Authors: Xun Zeng, Chuanlai Liu, Chaoyu Zhao, Jie Dong, Franz Roters, Dikai Guan

Abstract: Tensile twinning is a main deformation mode in hexagonal close packed structure metals, so it is important to comprehensively understand twinning mechanisms which are not fully disclosed using 2D or small volume 3D characterization techniques. A large area 3D electron backscatter diffraction (EBSD) measurement and crystal plasticity modeling were carried out to investigate the tensile twinning beh… ▽ More Tensile twinning is a main deformation mode in hexagonal close packed structure metals, so it is important to comprehensively understand twinning mechanisms which are not fully disclosed using 2D or small volume 3D characterization techniques. A large area 3D electron backscatter diffraction (EBSD) measurement and crystal plasticity modeling were carried out to investigate the tensile twinning behaviors in a Mg alloy. The results showed that tensile twinning activity was underestimated using conventional 2D EBSD scans. When compressed to yield point, the examined twin frequency with 2D was lower than that using 3D EBSD. The effects of Schmid factor (SF) on twinning were investigated. Almost all high Schmid factor (SF>0.35) grains were twinned. A surprising high twin frequency of 82% in middle SF (0.35>=SF>=0.15) grains was observed, which was unexpected since the middle SF grains were believed to be unfavorable for twinning. The twin frequency in low SF (SF<0.15) grains was slightly increased from 2D to 3D EBSD due to the small volume of twins. The shear stress maintained a high level and was homogeneously distributed in high SF grains, facilitating twin nucleation and growth. The shear stress was distributed heterogeneously within the middle SF grains, and twins were nucleated within areas with positive shear stress. The shear stress in low SF grains was not favorable for twinning and twins occurred in the vicinity of stress accumulation. Twinning activities in the same grain varied on different layers. It was attributed to the stress fluctuation derived from grain environment changes. △ Less

Submitted 7 March, 2023; originally announced March 2023.

Electronic structure of InSb (001), (110), and (111)B surfaces

Authors: Jason T. Dong, Hadass S. Inbar, Mihir Pendharkar, Teun A. J. van Schijndel, Elliot C. Young, Connor P. Dempsey, Christopher J. Palmstrøm

Abstract: The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned n… ▽ More The electronic structure of various (001), (110), and (111)B surfaces of n-type InSb were studied with scanning tunneling microscopy and spectroscopy. The InSb(111)B (3x1) surface reconstruction is determined to be a disordered (111)B (3x3) surface reconstruction. The surface Fermi-level of the In rich and the equal In:Sb (001), (110), and (111)B surface reconstructions was observed to be pinned near the valence band edge. This observed pinning is consistent with a charge neutrality level lying near the valence band maximum. Sb termination was observed to shift the surface Fermi-level position by up to $254 \pm 35$ meV towards the conduction band on the InSb (001) surface and $60 \pm 35$ meV towards the conduction band on the InSb(111)B surface. The surface Sb on the (001) can shift the surface from electron depletion to electron accumulation. We propose the shift in the Fermi-level pinning is due to charge transfer from Sb clusters on the Sb terminated surfaces. Additionally, many sub-gap states were observed for the (111)B (3x1) surface, which are attributed to the disordered nature of this surface. This work demonstrates the tuning of the Fermi-level pinning position of InSb surfaces with Sb termination. △ Less

Submitted 18 February, 2023; originally announced February 2023.

Comments: 7 pages, 5 figures

Inversion Symmetry Breaking in Epitaxial Ultrathin Bi (111) Films

Authors: Hadass S. Inbar, Muhammad Zubair, Jason T. Dong, Aaron N Engel, Connor P. Dempsey, Yu Hao Chang, Shinichi Nishihaya, Shoaib Khalid, Alexei V. Fedorov, Anderson Janotti, Chris J. Palmstrøm

Abstract: Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth an… ▽ More Bismuth (Bi) films hold potential for spintronic devices and topological one-dimensional edge transport. Large-area high-quality (111) Bi ultrathin films are grown on InSb (111)B substrates. Strong film-substrate interactions epitaxially stabilize the (111) orientation and lead to inversion symmetry breaking. We resolve the longstanding controversy over the Z_2 topological assignment of bismuth and show that the surface states are topologically trivial. Our results demonstrate that interfacial bonds prevent the semimetal-to-semiconductor transition predicted for freestanding bismuth layers, highlighting the importance of controlled functionalization and surface passivation in two-dimensional materials. △ Less

Submitted 16 May, 2023; v1 submitted 1 February, 2023; originally announced February 2023.

Superconducting fluctuations and charge-4$e$ plaquette state at strong coupling

Authors: Qiong Qin, Jian-Jun Dong, Yutao Sheng, Dongchen Huang, Yi-feng Yang

Abstract: We apply the static auxiliary field Monte Carlo approach to study phase correlations of the pairing fields in a microscopic model with spin-singlet pairing interaction. We find that the short- and long-range phase correlations are well captured by the phase mutual information, which allows us to construct a theoretical phase diagram containing the uniform $d$-wave superconducting region, the phase… ▽ More We apply the static auxiliary field Monte Carlo approach to study phase correlations of the pairing fields in a microscopic model with spin-singlet pairing interaction. We find that the short- and long-range phase correlations are well captured by the phase mutual information, which allows us to construct a theoretical phase diagram containing the uniform $d$-wave superconducting region, the phase fluctuating region, the local pairing region, and the disordered region. We show that the gradual development of phase coherence has a number of consequences on spectroscopic measurements, such as the development of the Fermi arc and the anisotropy in the angle-resolved spectra, scattering rate, entropy, specific heat, and quasiparticle dispersion, in good agreement with experimental observations. For strong coupling, our Monte Carlo simulation reveals an unexpected charge-4$e$ plaquette state with $d$-wave bonds, which competes with the uniform $d$-wave superconductivity and exhibits a U-shaped density of states. △ Less

Submitted 13 August, 2023; v1 submitted 20 January, 2023; originally announced January 2023.

Journal ref: Phys. Rev. B 108, 054506 (2023)

Magnetostriction, piezomagnetism and domain nucleation in a kagome antiferromagnet

Authors: Qingkai Meng, Jianting Dong, Pan Nie, Liangcai Xu, **hua Wang, Shan Jiang, Huakun Zuo, Jia Zhang, Xiaokang Li, Zengwei Zhu, Leon Balents, Kamran Behnia

Abstract: Whenever the elastic energy of a solid depends on magnetic field, there is a magnetostrictive response. Field-linear magnetostriction implies piezomagnetism and vice versa. Here, we show that Mn$_3$Sn, a non-collinear antiferromanget with Weyl nodes, hosts a large and almost perfectly linear magnetostriction even at room temperature. The longitudinal and transverse magnetostriction, with opposite… ▽ More Whenever the elastic energy of a solid depends on magnetic field, there is a magnetostrictive response. Field-linear magnetostriction implies piezomagnetism and vice versa. Here, we show that Mn$_3$Sn, a non-collinear antiferromanget with Weyl nodes, hosts a large and almost perfectly linear magnetostriction even at room temperature. The longitudinal and transverse magnetostriction, with opposite signs and similar amplitude are restricted to the kagome planes and the out-of-plane response is negligibly small. By studying four different samples with different Mn:Sn ratios, we find a clear correlation between the linear magnetostriction, the spontaneous magnetization and the concentration of Sn vacancies. The recently reported piezomagnetic data fits in our picture. We show that linear magnetostriction and piezomagnetism are both driven by the field-induced in-plane twist of spins. A quantitative account of the experimental data requires the distortion of the spin texture by Sn vacancies. We find that the field-induced domain nucleation within the hysteresis loop corresponds to a phase transition. Within the hysteresis loop, a concomitant mesoscopic modulation of local strain and spin twist angles, leading to twisto-magnetic stripes, arises as a result of the competition between elastic and magnetic energies. △ Less

Submitted 28 March, 2024; v1 submitted 16 January, 2023; originally announced January 2023.

Comments: 12 pages, 7 figures, Supplementary Materials included

Voltage-Controlled Magnon Transistor via Tunning Interfacial Exchange Coupling

Authors: Yizhan Wang, Tianyi Zhang, **g Dong, Peng Chen, Caihua Wan, Guoqiang Yu, Xiufeng Han

Abstract: Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact wit… ▽ More Magnon transistors that can effectively regulate magnon transport by an electric field are desired for magnonics which aims to provide a Joule-heating free alternative to the conventional electronics owing to the electric neutrality of magnons (the key carriers of spin-angular momenta in the magnonics). However, also due to their electric neutrality, magnons have no access to directly interact with an electric field and it is thus difficult to manipulate magnon transport by voltages straightforwardly. Here, we demonstrated a gate voltage ($V_{\rm g}$) applied on a nonmagnetic metal/magnetic insulator (NM/MI) interface that bended the energy band of the MI and then modulated the possibility for conduction electrons in the NM to tunnel into the MI can consequently enhance or weaken the spin-magnon conversion efficiency at the interface. A voltage-controlled magnon transistor based on the magnon-mediated electric current drag (MECD) effect in a Pt/Y$_{\rm 3}$Fe$_{\rm 5}$O$_{\rm 12}$ (YIG)/Pt sandwich was then experimentally realized with $V_{\rm g}$ modulating the magnitude of the MECD signal. The obtained efficiency (the change ratio between the MECD voltage at $\pm V_{\rm g}$) reached 10%/(MV/cm) at 300 K. This prototype of magnon transistor offers an effective scheme to control magnon transport by a gate voltage. △ Less

Submitted 13 January, 2023; originally announced January 2023.

Comments: 12 pages, 4 figures

Tremendous tunneling magnetoresistance effects based on van der Waals room-temperature ferromagnet Fe$_3$GaTe$_2$ with highly spin-polarized Fermi surfaces

Authors: Xinlu Li, Meng Zhu, Yaoyuan Wang, Fanxing Zheng, Jianting Dong, Ye Zhou, Long You, Jia Zhang

Abstract: Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perp… ▽ More Recently, van der Waals (vdW) magnetic heterostructures have received increasing research attention in spintronics. However, the lack of room-temperature magnetic order of vdW material has largely impedes its development in practical spintronics devices. Inspired by the recently discovered vdW ferromagnet Fe3GaTe2, which has been shown to have magnetic order above room temperature and sizable perpendicular magnetic anisotropy, we investigate the basic electronic structure and magnetic properties of Fe3GaTe2 as well as tunneling magnetoresistance effect in magnetic tunnel junctions (MTJs) with structure of Fe3GaTe2/Insulator/Fe3GaTe2 by using first-principles calculations. It is found that Fe3GaTe2 with highly spin-polarized Fermi surface ensures that such magnetic tunnel junctions may have prominent tunneling magnetoresistance effect at room temperature even comparable to existing conventional AlOx and MgO-based MTJs. Our results suggest that Fe3GaTe2-based MTJs may be the promising candidate for realizing long-waiting full magnetic vdW spintronic devices. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect

Authors: P. Zhang, S. Mudi, M. Pendharkar, J. S. Lee, C. P. Dempsey, A. P. McFadden, S. D. Harrington, J. T. Dong, H. Wu, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Her… ▽ More Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Here we report patterns of Shapiro steps expected in topological Josephson junctions, such as the missing first Shapiro step, or several missing odd-order steps. But our junctions, which are InAs quantum wells with Al contacts, are studied near zero magnetic field, meaning that they are not in the topological regime. We also observe other patterns such as missing even steps and several missing steps in a row, not relevant to topological superconductivity. Potentially responsible for our observations is rounding of not fully developed steps superimposed on non-monotonic resistance versus voltage curves, but several origins may be at play. Our results demonstrate that any single pattern, even striking, cannot uniquely identify topological superconductivity, and a multifactor approach is necessary to unambiguously establish this important phenomenon. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://zenodo.org/record/6416083

Large Second-Order Josephson Effect in Planar Superconductor-Semiconductor Junctions

Authors: P. Zhang, A. Zarassi, L. Jarjat, V. Van de Sande, M. Pendharkar, J. S. Lee, C. P. Dempsey, A. P. McFadden, S. D. Harrington, J. T. Dong, H. Wu, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gat… ▽ More We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gate voltages as well as magnetic flux. Second, Josephson junction devices exhibit kinks near half-flux quantum in supercurrent diffraction patterns. Third, half-integer Shapiro steps are present in the junctions. Similar phenomena are observed in Sn/InAs quantum well devices. We perform data fitting to a numerical model with a two-component current phase relation. Analysis including a loop inductance suggests that the sign of the second harmonic term is negative. The microscopic origins of the observed effect remain to be understood. We consider alternative explanations which can account for some but not all of the evidence. △ Less

Submitted 19 November, 2023; v1 submitted 14 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083 v2: Added block "Non-identical negative and positive switching currents" and Figs.S4, S5. v3: Added Figs. 6, S6-S9, simulations with both inductive and second harmonic effects

Journal ref: SciPost Phys. 16, 030 (2024)

Planar Josephson Junctions Templated by Nanowire Shadowing

Authors: P. Zhang, A. Zarassi, M. Pendharkar, J. S. Lee, L. Jarjat, V. Van de Sande, B. Zhang, S. Mudi, H. Wu, S. Tan, C. P. Dempsey, A. P. McFadden, S. D. Harrington, B. Shojaei, J. T. Dong, A. -H. Chen, M. Hocevar, C. J. Palmstrøm, S. M. Frolov

Abstract: More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technol… ▽ More More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technologies. When both junction contacts are placed on the same surface, such as a two-dimensional material, the junction is called ``planar". One outstanding challenge is that not all materials are amenable to the standard planar junction fabrication. The device quality, rather than the intrinsic characteristics, may be defining the results. Here, we introduce a technique in which nanowires are placed on the surface and act as a shadow mask for the superconductor. The advantages are that the smallest dimension is determined by the nanowire diameter and does not require lithography, and that the junction is not exposed to chemicals such as etchants. We demonstrate this method with an InAs quantum well, using two superconductors - Al and Sn, and two semiconductor nanowires - InAs and InSb. The junctions exhibit critical current levels consistent with transparent interfaces and uniform width. We show that the template nanowire can be operated as a self-aligned electrostatic gate. Beyond single junctions, we create SQUIDs with two gate-tunable junctions. We suggest that our method can be used for a large variety of quantum materials including van der Waals layers, topological insulators, Weyl semimetals and future materials for which proximity effect devices is a promising research avenue. △ Less

Submitted 8 November, 2022; originally announced November 2022.

Comments: Written using The Block Method. Data on Zenodo DOI: https://doi.org/10.5281/zenodo.6416083

Untwisting moiré physics: Almost ideal bands and fractional Chern insulators in periodically strained monolayer graphene

Authors: Qiang Gao, Junkai Dong, Patrick Ledwith, Daniel Parker, Eslam Khalaf

Abstract: Moiré systems have emerged in recent years as a rich platform to study strong correlations. Here, we will discuss a simple, experimentally feasible setup based on periodically strained graphene that reproduces several key aspects of twisted moiré heterostructures -- but without introducing a twist. We consider a monolayer graphene sheet subject to a $C_2$-breaking periodic strain-induced psuedomag… ▽ More Moiré systems have emerged in recent years as a rich platform to study strong correlations. Here, we will discuss a simple, experimentally feasible setup based on periodically strained graphene that reproduces several key aspects of twisted moiré heterostructures -- but without introducing a twist. We consider a monolayer graphene sheet subject to a $C_2$-breaking periodic strain-induced psuedomagnetic field (PMF) with period $L_M \gg a$, along with a scalar potential of the same period. This system has {\it almost ideal} flat bands with valley-resolved Chern number $\pm 1$, where the deviation from ideal band geometry is analytically controlled and exponentially small in the dimensionless ratio $(L_M/l_B)^2$ where $l_B$ is the magnetic length corresponding to the maximum value of the PMF. Moreover, the scalar potential can tune the bandwidth far below the Coulomb scale, making this a very promising platform for strongly interacting topological phases. Using a combination of strong-coupling theory and self-consistent Hartree fock, we find quantum anomalous Hall states at integer fillings. At fractional filling, exact diagonaliztion reveals a fractional Chern insulator at parameters in the experimentally feasible range. Overall, we find that this system has larger interaction-induced gaps, smaller quasiparticle dispersion, and enhanced tunability compared to twisted graphene systems, even in their ideal limit. △ Less

Submitted 1 November, 2022; originally announced November 2022.

Comments: 5 pages + supplement

Emergence of sector and spiral patterns from a two-species mutualistic cross-feeding model

Authors: Jiaqi. Lin, Hui. Sun, JiaJia Dong

Abstract: The ubiquitous existence of microbial communities marks the importance of understanding how species interact within the community to coexist and their spatial organization. We study a two-species mutualistic cross-feeding model through a stochastic cellular automaton on a square lattice using kinetic Monte Carlo simulation. Our model encapsulates the essential dynamic processes such as cell growth… ▽ More The ubiquitous existence of microbial communities marks the importance of understanding how species interact within the community to coexist and their spatial organization. We study a two-species mutualistic cross-feeding model through a stochastic cellular automaton on a square lattice using kinetic Monte Carlo simulation. Our model encapsulates the essential dynamic processes such as cell growth, and nutrient excretion, diffusion and uptake. Focusing on the interplay among nutrient diffusion and individual cell division, we discover three general classes of colony morphology: co-existing sectors, co-existing spirals, and engulfment. When the cross-feeding nutrient is widely available, either through high excretion or fast diffusion, a stable circular colony with alternating species sector emerges. When the consumer cells rely on being spatially close to the producers, we observe a stable spiral. We also see one species being engulfed by the other when species interfaces merge due to stochastic fluctuation. By tuning the diffusion rate and the growth rate, we are able to gain quantitative insights into the structures of the sectors and the spirals. △ Less

Submitted 27 October, 2022; originally announced October 2022.

Comments: 17 pages 17 figures

Journal ref: PLoS ONE 17(10): e0276268 (2022)

Exact Many-Body Ground States from Decomposition of Ideal Higher Chern Bands: Applications to Chirally Twisted Graphene Multilayers

Authors: Junkai Dong, Patrick J. Ledwith, Eslam Khalaf, Jong Yeon Lee, Ashvin Vishwanath

Abstract: Motivated by the higher Chern bands of twisted graphene multilayers, we consider flat bands with arbitrary Chern number $C$ with ideal quantum geometry. While $C>1$ bands differ from Landau levels, we show that these bands host exact fractional Chern insulator (FCI) ground states for short range interactions. We show how to decompose ideal higher Chern bands into separate ideal bands with Chern nu… ▽ More Motivated by the higher Chern bands of twisted graphene multilayers, we consider flat bands with arbitrary Chern number $C$ with ideal quantum geometry. While $C>1$ bands differ from Landau levels, we show that these bands host exact fractional Chern insulator (FCI) ground states for short range interactions. We show how to decompose ideal higher Chern bands into separate ideal bands with Chern number $1$ that are intertwined through translation and rotation symmetry. The decomposed bands admit an $SU(C)$ action that combines real space and momentum space translations. Remarkably, they also allow for analytic construction of exact many-body ground states, such as generalized quantum Hall ferromagnets and FCIs, including flavor-singlet Halperin states and Laughlin ferromagnets in the limit of short-range interactions. In this limit, the $SU(C)$ action is promoted to a symmetry on the ground state subspace. While flavor singlet states are translation symmetric, the flavor ferromagnets correspond to translation broken states and admit charged skyrmion excitations corresponding to a spatially varying density wave pattern. We confirm our analytic predictions with numerical simulations of ideal bands of twisted chiral multilayers of graphene, and discuss consequences for experimentally accessible systems such as monolayer graphene twisted relative to a Bernal bilayer. △ Less

Submitted 24 October, 2022; originally announced October 2022.

Comments: 14+10 pages, 8 figures

Journal ref: Phys. Rev. Research 5, 023166 (2023)

Electronic dispersion, correlations and stacking in the photoexcited state of 1T-TaS$_2$

Authors: **gwei Dong, Dongbin Shin, Ernest Pastor, Tobias Ritschel, Laurent Cario, Zhesheng Chen, Weyain Qi, Romain Grasset, Marino Marsi, Amina Taleb-Ibrahimi, Noejung Park, Angel Rubio, Luca Perfetti, Evangelos Papalazarou

Abstract: Here we perform angle and time-resolved photoelectron spectroscopy on the commensurate Charge Density Wave (CDW) phase of 1T-TaS$_2$. Data with different probe pulse polarization are employed to map the dispersion of electronic states below and above the chemical potential. Upon photoexcitation, the fluctuations of CDW order erase the band dispersion near to the chemical potential and halve the ch… ▽ More Here we perform angle and time-resolved photoelectron spectroscopy on the commensurate Charge Density Wave (CDW) phase of 1T-TaS$_2$. Data with different probe pulse polarization are employed to map the dispersion of electronic states below and above the chemical potential. Upon photoexcitation, the fluctuations of CDW order erase the band dispersion near to the chemical potential and halve the charge gap size. This transient phase sets within half a period of the coherent lattice motion and is favored by strong electronic correlations. The experimental results are compared to Density-Functional Theory (DFT) calculations with a self-consistent evaluation of the Coulomb repulsion. Our simulations indicate that the screening of Coulomb repulsion depends on the stacking order of the TaS$_2$ layers. The entanglement of such degrees of freedom suggest that both the structural order and electronic repulsion are locally modified by the photoinduced CDW fluctuations. △ Less

Submitted 14 June, 2023; v1 submitted 20 October, 2022; originally announced October 2022.

Universal cover-time distribution of heterogeneous random walks

Authors: Jia-Qi Dong, Wen-Hui Han, Yisen Wang, Xiao-Song Chen, Liang Huang

Abstract: The cover-time problem, i.e., time to visit every site in a system, is one of the key issues of random walks with wide applications in natural, social, and engineered systems. Addressing the full distribution of cover times for random walk on complex structures has been a long-standing challenge and has attracted persistent efforts. Yet, the known results are essentially limited to homogeneous sys… ▽ More The cover-time problem, i.e., time to visit every site in a system, is one of the key issues of random walks with wide applications in natural, social, and engineered systems. Addressing the full distribution of cover times for random walk on complex structures has been a long-standing challenge and has attracted persistent efforts. Yet, the known results are essentially limited to homogeneous systems, where different sites are on an equal footing and have identical or close mean first-passage times, such as random walks on a torus. In contrast, realistic random walks are prevailingly heterogeneous with diversified mean first-passage times. Does a universal distribution still exist? Here, by considering the most general situations, we uncover a generalized rescaling relation for the cover time, exploiting the diversified mean first-passage times that have not been accounted for before. This allows us to concretely establish a universal distribution of the rescaled cover times for heterogeneous random walks, which turns out to be the Gumbel universality class that is ubiquitous for a large family of extreme value statistics. Our analysis is based on the transfer matrix framework, which is generic that besides heterogeneity, it is also robust against biased protocols, directed links, and self-connecting loops. The finding is corroborated with extensive numerical simulations of diverse heterogeneous non-compact random walks on both model and realistic topological structures. Our new technical ingredient may be exploited for other extreme value or ergodicity problems with nonidentical distributions. △ Less

Submitted 10 October, 2022; originally announced October 2022.

Comments: 12 pages, 6 figures

Loop-current charge density wave driven by long-range Coulomb repulsion on the kagome lattice

Authors: **-Wei Dong, Ziqiang Wang, Sen Zhou

Abstract: Recent experiments on vanadium-based nonmagnetic kagomé metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) revealed evidence for possible spontaneous time-reversal symmetry (TRS) breaking in the charge density wave (CDW) ordered state. The long-sought-after quantum order of loop currents has been suggested as a candidate for the TRS breaking state. However, a microscopic model for the emergence of the loop-cu… ▽ More Recent experiments on vanadium-based nonmagnetic kagomé metals $A$V$_3$Sb$_5$ ($A=$ K, Rb, Cs) revealed evidence for possible spontaneous time-reversal symmetry (TRS) breaking in the charge density wave (CDW) ordered state. The long-sought-after quantum order of loop currents has been suggested as a candidate for the TRS breaking state. However, a microscopic model for the emergence of the loop-current CDW due to electronic correlations is still lacking. Here, we calculate the susceptibility of the real and imaginary bond orders on the kagomé lattice near van Hove filling, and reveal the importance of next-nearest-neighbor Coulomb repulsion $V_2$ in triggering the instability toward imaginary bond ordered CDW. The concrete effective single-orbital $t$-$V_1$-$V_2$ model on the kagomé lattice is then studied, where $t$ and $V_1$ are the hop** and Coulomb repulsion on the nearest-neighbor bonds. We obtain the mean-field ground states, analyze their properties, and determine the phase diagram in the plane spanned by $V_1$ and $V_2$ at van Hove filling. The region dominated by $V_1$ is occupied by a $2a_0 \times 2a_0$ real CDW insulator with the inverse of Star-of-David (ISD) bond configuration. Increasing $V_2$ indeed drives a first-order transition from ISD to stabilized loop-current insulators that exhibit four possible current patterns of different topological properties, leading to orbital Chern insulators. We then extend these results away from van Hove filling and show that electron do** helps the stabilization of loop currents, and gives rise to doped orbital Chern insulators with emergent Chern Fermi pockets carrying large Berry curvature and orbital magnetic moment. Our findings provide a concrete model realization of the loop-current Chern metal at the mean-field level for the TRS breaking normal state of the kagomé superconductors. △ Less

Submitted 18 January, 2023; v1 submitted 21 September, 2022; originally announced September 2022.

Comments: 12 pages, 7 figures

Journal ref: Phys. Rev. B 107, 045127 (2023)

Extinction by plasmonic nanoparticles in dispersive and dissipative media

Authors: Shangyu Zhang, Jian Dong, Wenjie Zhang, Minggang Luo, Linhua Liu

Abstract: Extinction of small metallic spheres has been well understood through the classical Mie theory when the host medium is dispersive and transparent. However, the role of host dissipation on the particulate extinction remains a competition between the enhancing and reducing effects on the localized surface plasmonic resonance (LSPR). Here, using a generalized Mie theory, we elaborate on the specific… ▽ More Extinction of small metallic spheres has been well understood through the classical Mie theory when the host medium is dispersive and transparent. However, the role of host dissipation on the particulate extinction remains a competition between the enhancing and reducing effects on the localized surface plasmonic resonance (LSPR). Here, using a generalized Mie theory, we elaborate on the specific influence mechanisms of host dissipation on the extinction efficiency factors of a plasmonic nanosphere. To this end, we isolate the dissipative effects by comparing the dispersive and dissipative host with its transparent counterpart. As a result, we identify the dam** effects of host dissipation on the LSPR including the resonance widening and amplitude reducing. The resonance positions are shifted by host dissipation, which cannot be predicted by the classical Fröhlich condition. Finally, we demonstrate that a wide-band extinction enhancement due to host dissipation can be realized away from the positions of LSPR. △ Less

Submitted 2 September, 2022; originally announced September 2022.

Comments: 5 pages, 3 figures

Dirac electron under periodic magnetic field: Platform for fractional Chern insulator and generalized Wigner crystal

Authors: Junkai Dong, Jie Wang, Liang Fu

Abstract: We propose a platform for flat Chern band by subjecting two-dimensional Dirac materials -- such as graphene and topological insulator thin films -- to a periodic magnetic field, which can be created by the vortex lattice of a type-II superconductor. As a generalization of the $n=0$ Landau level, the flat band of Dirac fermion under a nonuniform magnetic field remains at zero energy, exactly disper… ▽ More We propose a platform for flat Chern band by subjecting two-dimensional Dirac materials -- such as graphene and topological insulator thin films -- to a periodic magnetic field, which can be created by the vortex lattice of a type-II superconductor. As a generalization of the $n=0$ Landau level, the flat band of Dirac fermion under a nonuniform magnetic field remains at zero energy, exactly dispersionless and topologically protected, while its local density of states is spatially modulated due to the magnetic field variation. In the presence of short-range repulsion, we find fractional Chern insulators emerge at filling factors $ν=1/m$, whose ground states are generalized Laughlin wavefunctions. We further argue that generalized Wigner crystals may emerge at certain commensurate fillings under a highly nonuniform magnetic field in the form of a flux line lattice. △ Less

Submitted 22 August, 2022; originally announced August 2022.

Nonlinearity of the post-spinel transition and its expression in slabs and plumes worldwide

Authors: Junjie Dong, Rebecca A. Fischer, Lars Stixrude, Matthew C. Brennan, Kierstin Daviau, Terry-Ann Suer, Katlyn M. Turner, Yue Meng, Vitali B. Prakapenka

Abstract: At the interface of Earth's upper and lower mantle, the post-spinel transition boundary controls the dynamics and morphologies of downwelling slabs and upwelling plumes, and its Clapeyron slope is hence one of the most important constraints on mantle convection. In this study, we reported a new in situ experimental dataset on phase stability in Mg$_{2}$SiO$_{4}$ at mantle transition zone pressures… ▽ More At the interface of Earth's upper and lower mantle, the post-spinel transition boundary controls the dynamics and morphologies of downwelling slabs and upwelling plumes, and its Clapeyron slope is hence one of the most important constraints on mantle convection. In this study, we reported a new in situ experimental dataset on phase stability in Mg$_{2}$SiO$_{4}$ at mantle transition zone pressures from laser-heated diamond anvil cell experiments, along with a compilation of corrected in situ experimental datasets from the literature. We presented a machine learning framework for high-pressure phase diagram determination and focused on its application to constrain the location and Clapeyron slope of the post-spinel transition: ringwoodite $\leftrightarrow$ bridgmanite + periclase. We found that the post-spinel boundary is nonlinear and its Clapeyron slope varies locally from $-2.3_{-1.4}^{+0.6}$ MPa/K at 1900 K, to $-1.0_{-1.7}^{+1.3}$ MPa/K at 1700 K, and to $0.0_{-2.0}^{+1.7}$ MPa/K at 1500 K. We applied the temperature-dependent post-spinel Clapeyron slope to estimate its lateral variation across the "660-km" seismic discontinuity in subducting slabs and hotspot-associated plumes worldwide, as well as the ambient mantle. We found that, in the present-day mantle, the average post spinel Clapeyron slope in the plumes is three times more negative than that in slabs, and we then discussed the effects of a nonlinear post-spinel transition on the dynamics of Earth's mantle. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 42 pages, 6500 words and 5 figures in the main text, and 1 supplement with 6 texts, 5 figures, and 6 tables

Epitaxial growth, magnetoresistance, and electronic band structure of GdSb magnetic semimetal films

Authors: Hadass S. Inbar, Dai Q. Ho, Shouvik Chatterjee, Mihir Pendharkar, Aaron N. Engel, Jason T. Dong, Shoaib Khalid, Yu Hao Chang, Taozhi Guo, Alexei V. Fedorov, Donghui Lu, Makoto Hashimoto, Dan Read, Anderson Janotti, Christopher J. Palmstrøm

Abstract: Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin… ▽ More Motivated by observations of extreme magnetoresistance (XMR) in bulk crystals of rare-earth monopnictide (RE-V) compounds and emerging applications in novel spintronic and plasmonic devices based on thin-film semimetals, we have investigated the electronic band structure and transport behavior of epitaxial GdSb thin films grown on III-V semiconductor surfaces. The Gd3+ ion in GdSb has a high spin S=7/2 and no orbital angular momentum, serving as a model system for studying the effects of antiferromagnetic order and strong exchange coupling on the resulting Fermi surface and magnetotransport properties of RE-Vs. We present a surface and structural characterization study map** the optimal synthesis window of thin epitaxial GdSb films grown on III-V lattice-matched buffer layers via molecular beam epitaxy. To determine the factors limiting XMR in RE-V thin films and provide a benchmark for band structure predictions of topological phases of RE-Vs, the electronic band structure of GdSb thin films is studied, comparing carrier densities extracted from magnetotransport, angle-resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. ARPES shows hole-carrier rich topologically-trivial semi-metallic band structure close to complete electron-hole compensation, with quantum confinement effects in the thin films observed through the presence of quantum well states. DFT predicted Fermi wavevectors are in excellent agreement with values obtained from quantum oscillations observed in magnetic field-dependent resistivity measurements. An electron-rich Hall coefficient is measured despite the higher hole carrier density, attributed to the higher electron Hall mobility. The carrier mobilities are limited by surface and interface scattering, resulting in lower magnetoresistance than that measured for bulk crystals. △ Less

Submitted 25 October, 2022; v1 submitted 4 August, 2022; originally announced August 2022.

Report number: Phys. Rev. Materials 6, L121201

Journal ref: Phys. Rev. Materials 6, L121201 (2022)

Two-dimensional anisotropic Dirac materials PtN4C2 and Pt2N8C6 with quantum spin and valley Hall effects

Authors: **g** Dong, Chuhan Wang, Xinlei Zhao, Miao Gao, Xun-Wang Yan, Fengjie Ma, Zhong-Yi Lu

Abstract: We propose two novel two-dimensional topological Dirac materials, planar PtN4C2 and Pt2N8C6, which exhibit graphene-like electronic structures with linearly dispersive Dirac-cone states exactly at the Fermi level. Moreover, the Dirac cone is anisotropic, resulting in anisotropic Fermi velocities and making it possible to realize orientation-dependent quantum devices. Using the first-principles ele… ▽ More We propose two novel two-dimensional topological Dirac materials, planar PtN4C2 and Pt2N8C6, which exhibit graphene-like electronic structures with linearly dispersive Dirac-cone states exactly at the Fermi level. Moreover, the Dirac cone is anisotropic, resulting in anisotropic Fermi velocities and making it possible to realize orientation-dependent quantum devices. Using the first-principles electronic structure calculations, we have systemically studied the structural, electronic, and topological properties. We find that spin-orbit coupling opens a sizable topological band gap so that the materials can be classified as quantum spin Hall insulators as well as quantum valley Hall insulators. Helical edge states that reside in the insulating band gap connecting the bulk conduction and valence bands are observed. Our work not only expands the Dirac cone material family, but also provides a new avenue to searching for more two-dimensional topological quantum spin and valley Hall insulators. △ Less

Submitted 8 July, 2022; originally announced July 2022.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Materials 6, 074202 (2022)

Gate-tunable Superconducting Diode Effect in a Three-terminal Josephson Device

Authors: Mohit Gupta, Gino V. Graziano, Mihir Pendharkar, Jason T. Dong, Connor P. Dempsey, Chris Palmstrøm, Vlad S. Pribiag

Abstract: The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensiona… ▽ More The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits. △ Less

Submitted 3 June, 2023; v1 submitted 16 June, 2022; originally announced June 2022.

Journal ref: Nat Commun 14, 3078 (2023)

Development of long-range phase coherence on the Kondo lattice

Authors: Jian-Jun Dong, Yi-feng Yang

Abstract: Despite of many efforts, we still lack a clear picture on how heavy electrons emerge and develop on the Kondo lattice. Here we introduce a key concept named the hybridization bond phase and propose a scenario based on phase correlation to address this issue. The bond phase is a gauge-invariant quantity combining two onsite hybridization fields mediated by inter-site magnetic correlations. Its prob… ▽ More Despite of many efforts, we still lack a clear picture on how heavy electrons emerge and develop on the Kondo lattice. Here we introduce a key concept named the hybridization bond phase and propose a scenario based on phase correlation to address this issue. The bond phase is a gauge-invariant quantity combining two onsite hybridization fields mediated by inter-site magnetic correlations. Its probabilistic distribution decays exponentially with site distance, from which a characteristic length scale can be extracted to describe the spatial correlation of Kondo hybridizations. Our calculations show that this correlation length grows logarithmically with lowering temperature at large Kondo coupling, and reveal a precursor pseudogap state with short-range phase correlation before long-range phase coherence is developed to form the Kondo insulating (or heavy electron) state at low temperatures. This provides a potential microscopic explanation of the two-stage hybridization proposed by recent pump-probe experiment and the logarithmic scaling in the phenomenological two-fluid model. Our work offers a novel theoretical framework to describe the phase-related physics in Kondo lattice systems. △ Less

Submitted 27 October, 2022; v1 submitted 11 June, 2022; originally announced June 2022.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 106, L161114 (2022)

Modeling Defect-Level Switching for Highly-Nonlinear and Hysteretic Electronic Devices

Authors: Jiahao Dong, R. Jaramillo

Abstract: Many semiconductors feature defects with charge state transition levels that can switch due to structure changes following defect ionization: we call this defect-level switching (DLS). For example, DX centers in III-V compounds, and oxygen vacancies in ZnO, can switch between deep and shallow donor configurations, and these bistable dynamics are responsible for persistent photoconductivity. We rec… ▽ More Many semiconductors feature defects with charge state transition levels that can switch due to structure changes following defect ionization: we call this defect-level switching (DLS). For example, DX centers in III-V compounds, and oxygen vacancies in ZnO, can switch between deep and shallow donor configurations, and these bistable dynamics are responsible for persistent photoconductivity. We recently demonstrated highly-nonlinear, hysteretic, two-terminal electronic devices using DLS in CdS [H. Yin, A. Kumar, J.M. LeBeau, and R. Jaramillo, Phys. Rev. Applied 15, 014014 (2021).] The resulting devices operate without mass transport, and in the opposite sense to most resistive switches: they are in a high-conductivity state at equilibrium, and switch to a low-conductivity state at forward bias. Although DLS uses the same defect transitions that are responsible for persistent photoconductivity, DLS devices operate without light and can be orders-of-magnitude faster due to exponential tuning of transition rates with voltage. In this work we use theory and numerical simulation to explore the design space of DLS devices, emphasizing the tradeoff between speed and on/off ratio. Our results will be useful to guide future applications of these unusual devices. △ Less

Submitted 2 June, 2022; originally announced June 2022.

Atomic-scale Deformation Process of Glasses Unveiled by Stress-induced Structural Anisotropy

Authors: Jie Dong, Hailong Peng, Hui Wang, Yang Tong, Yutian Wang, Wojciech Dmowski, Baoan Sun, Takeshi Egami, Weihua Wang, Haiyang Bai

Abstract: Experimentally resolving atomic-scale structural changes of a deformed glass remains challenging owing to the disordered nature of glass structure. Here, we show that the structural anisotropy emerges as a general hallmark for different types of glasses (metallic glasses, oxide glass, amorphous selenium, and polymer glass) after thermo-mechanical deformation, and it is highly correlates with local… ▽ More Experimentally resolving atomic-scale structural changes of a deformed glass remains challenging owing to the disordered nature of glass structure. Here, we show that the structural anisotropy emerges as a general hallmark for different types of glasses (metallic glasses, oxide glass, amorphous selenium, and polymer glass) after thermo-mechanical deformation, and it is highly correlates with local nonaffine atomic displacements detected by the high-energy X-ray diffraction technique. By analyzing the anisotropic pair density function, we unveil the atomic-level mechanism responsible for the plastic flow, which notably differs between metallic glasses and covalent glasses. The structural rearrangements in metallic glasses are mediated through cutting and formation of atomic bonds, which occurs in some localized inelastic regions embedded in elastic matrix, whereas that of covalent glasses is mediated through the rotation of atomic bonds or chains without bond length change, which occurs in a less localized manner. △ Less

Submitted 28 May, 2022; originally announced May 2022.

Comments: 19 pages, 4 figures

Direct Imaging of Contacts and Forces in Colloidal Gels

Authors: Jun Dong, Francesco Turci, Robert L. Jack, Malcolm A. Faers, C. Patrick Royall

Abstract: Colloidal dispersions are prized as model systems to understand basic properties of materials, and are central to a wide range of industries from cosmetics to foods to agrichemicals. Among the key developments in using colloids to address challenges in condensed matter is to resolve the particle coordinates in 3D, allowing a level of analysis usually only possible in computer simulation. However i… ▽ More Colloidal dispersions are prized as model systems to understand basic properties of materials, and are central to a wide range of industries from cosmetics to foods to agrichemicals. Among the key developments in using colloids to address challenges in condensed matter is to resolve the particle coordinates in 3D, allowing a level of analysis usually only possible in computer simulation. However in amorphous materials, relating mechanical properties to microscopic structure remains problematic. This makes it rather hard to understand, for example, mechanical failure. Here we address this challenge by studying the contacts and the forces between particles, as well as their positions. To do so, we use a colloidal model system (an emulsion) in which the interparticle forces and local stress can be linked to the microscopic structure. We demonstrate the potential of our method to reveal insights into the failure mechanisms of soft amorphous solids by determining local stress in a colloidal gel. In particular, we identify `force chains' of load-bearing droplets, and local stress anisotropy, and investigate their connection with locally rigid packings of the droplets. △ Less

Submitted 7 March, 2022; originally announced March 2022.

Comments: 12 pages

Selective Control of Conductance Modes in Multi-terminal Josephson Junctions

Authors: Gino V. Graziano, Mohit Gupta, Mihir Pendharkar, Jason T. Dong, Connor P. Dempsey, Chris Palmstrøm, Vlad S. Pribiag

Abstract: The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point cont… ▽ More The Andreev bound state spectra of multi-terminal Josephson junctions form an artificial band structure, which is predicted to host tunable topological phases under certain conditions. However, the number of conductance modes between the terminals of multi-terminal Josephson junction must be few in order for this spectrum to be experimentally accessible. In this work we employ a quantum point contact geometry in three-terminal Josephson devices. We demonstrate independent control of conductance modes between each pair of terminals and access to the single-mode regime coexistent with the presence of superconducting coupling. These results establish a full platform on which to realize tunable Andreev bound state spectra in multi-terminal Josephson junctions. △ Less

Submitted 9 October, 2022; v1 submitted 4 January, 2022; originally announced January 2022.

Comments: 15 pages, 4 figures

Journal ref: Nat Commun 13, 5933 (2022)