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Showing 1–3 of 3 results for author: Djugba, D

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  1. arXiv:2405.00802  [pdf

    cond-mat.mtrl-sci

    Sensing Spin Wave Excitations by Spin Defects in Few-Layer Thick Hexagonal Boron Nitride

    Authors: **gcheng Zhou, Hanyi Lu, Di Chen, Mengqi Huang, Gerald Q. Yan, Faris Al-matouq, Jiu Chang, Dziga Djugba, Zhigang Jiang, Hailong Wang, Chunhui Rita Du

    Abstract: Optically active spin defects in wide band-gap semiconductors serve as a local sensor of multiple degrees of freedom in a variety of "hard" and "soft" condensed matter systems. Taking advantage of the recent progress on quantum sensing using van der Waals (vdW) quantum materials, here we report direct measurements of spin waves excited in magnetic insulator Y3Fe5O12 (YIG) by boron vacancy $V_B^-$… ▽ More

    Submitted 1 May, 2024; originally announced May 2024.

  2. arXiv:2308.15396  [pdf

    cond-mat.mes-hall cond-mat.mtrl-sci

    Layer-dependent magnetism and spin fluctuations in atomically thin van der Waals magnet CrPS4

    Authors: Mengqi Huang, Jazmine C. Green, **gcheng Zhou, Violet Williams, Senlei Li, Hanyi Lu, Dziga Djugba, Hailong Wang, Benedetta Flebus, Ni Ni, Chunhui Rita Du

    Abstract: van der Waals (vdW) magnets, an emerging family of two-dimensional (2D) materials, have received tremendous attention due to their rich fundamental physics and significant potential for cutting-edge technological applications. In contrast to the conventional bulk counterparts, vdW magnets exhibit significant tunability of local material properties, such as stacking engineered interlayer coupling a… ▽ More

    Submitted 29 August, 2023; originally announced August 2023.

  3. arXiv:2112.13570  [pdf

    cond-mat.mtrl-sci cond-mat.mes-hall

    Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride

    Authors: Mengqi Huang, **gcheng Zhou, Di Chen, Hanyi Lu, Nathan J. McLaughlin, Senlei Li, Mohammed Alghamdi, Dziga Djugba, **g Shi, Hailong Wang, Chunhui Rita Du

    Abstract: Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking a… ▽ More

    Submitted 27 December, 2021; originally announced December 2021.

    Comments: 13 pages, 5 figures

    Journal ref: Nature Communications 13, 5369 (2022)