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Analytical exciton energies in monolayer transition-metal dichalcogenides
Authors:
Hanh T. Dinh,
Ngoc-Hung Phan,
Duy-Nhat Ly,
Dai-Nam Le,
Ngoc-Tram D. Hoang,
Nhat-Quang Nguyen,
Phuoc-Thien Doan,
Van-Hoang Le
Abstract:
We derive an analytical expression for $s$-state exciton energies in monolayer transition-metal dichalcogenides (TMDCs): $E_{\text{ns}}=-{\text{Ry}}^*\times P_n/{(n-1/2+0.479\, r^*_0/κ)^2}$, $n=1,2,...$, where $r^*_0$ and $κ$ are the dimensionless screening length and dielectric constant of the surrounding medium; $\text{Ry}^*$ is an effective Rydberg energy scaled by the dielectric constant and e…
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We derive an analytical expression for $s$-state exciton energies in monolayer transition-metal dichalcogenides (TMDCs): $E_{\text{ns}}=-{\text{Ry}}^*\times P_n/{(n-1/2+0.479\, r^*_0/κ)^2}$, $n=1,2,...$, where $r^*_0$ and $κ$ are the dimensionless screening length and dielectric constant of the surrounding medium; $\text{Ry}^*$ is an effective Rydberg energy scaled by the dielectric constant and exciton reduced mass; $P_n(r^*_0/κ)$ is a function of variables $n$ and $r^*_0/κ$. Its values are around 1.0 so we consider it a term that corrects the Rydberg energy. Despite the simple form, the suggested formula gives exciton energies with high precision compared to the exact numerical solutions that accurately describe recent experimental data for a large class of TMDC materials, including WSe$_2$, WS$_2$, MoSe$_2$, MoS$_2$, and MoTe$_2$. To achieve these results, we have developed a so-called regulated perturbation theory by combining the conventional perturbation method with several elements of the Feranchuk-Komarov operator method, including the Levi-Civita transformation, the algebraic calculation technique via the annihilation and creation operators, and the introduction of a free parameter to optimize the convergence rate of the perturbation series. This universal form of exciton energies could be helpful in various physical analyses, including retrieval of the material parameters such as reduced exciton mass and screening length from the available measured exciton energies.
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Submitted 6 July, 2024; v1 submitted 1 July, 2024;
originally announced July 2024.
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An antiferromagnetic diode effect in even-layered MnBi2Te4
Authors:
Anyuan Gao,
Shao-Wen Chen,
Barun Ghosh,
Jian-Xiang Qiu,
Yu-Fei Liu,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Damien Bérubé,
Thao Dinh,
Houchen Li,
Christian Tzschaschel,
Seunghyun Park,
Tianye Huang,
Shang-Wei Lien,
Zhe Sun,
Sheng-Chin Ho,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Arun Bansil,
Hsin Lin,
Tay-Rong Chang,
Amir Yacoby
, et al. (4 additional authors not shown)
Abstract:
In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric supercondu…
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In a PN junction, the separation between positive and negative charges leads to diode transport. In the past few years, the intrinsic diode transport in noncentrosymmetric polar conductors has attracted great interest, because it suggests novel nonlinear applications and provides a symmetry-sensitive probe of Fermi surface. Recently, such studies have been extended to noncentrosymmetric superconductors, realizing the superconducting diode effect. Here, we show that, even in a centrosymmetric crystal without directional charge separation, the spins of an antiferromagnet (AFM) can generate a spatial directionality, leading to an AFM diode effect. We observe large second-harmonic transport in a nonlinear electronic device enabled by the compensated AFM state of even-layered MnBi2Te4. We also report a novel electrical sum-frequency generation (SFG), which has been rarely explored in contrast to the well-known optical SFG in wide-gap insulators. We demonstrate that the AFM enables an in-plane field-effect transistor and harvesting of wireless electromagnetic energy. The electrical SFG establishes a powerful method to study nonlinear electronics built by quantum materials. The AFM diode effect paves the way for potential device concepts including AFM logic circuits, self-powered AFM spintronics, and other applications that potentially bridge nonlinear electronics with AFM spintronics.
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Submitted 24 June, 2024;
originally announced June 2024.
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Kinetic Inductance, Quantum Geometry, and Superconductivity in Magic-Angle Twisted Bilayer Graphene
Authors:
Miuko Tanaka,
Joel Î-j. Wang,
Thao H. Dinh,
Daniel Rodan-Legrain,
Sameia Zaman,
Max Hays,
Bharath Kannan,
Aziza Almanakly,
David K. Kim,
Bethany M. Niedzielski,
Kyle Serniak,
Mollie E. Schwartz,
Kenji Watanabe,
Takashi Taniguchi,
Jeffrey A. Grover,
Terry P. Orlando,
Simon Gustavsson,
Pablo Jarillo-Herrero,
William D. Oliver
Abstract:
The physics of superconductivity in magic-angle twisted bilayer graphene (MATBG) is a topic of keen interest in moiré systems research, and it may provide insight into the pairing mechanism of other strongly correlated materials such as high-$T_{\mathrm{c}}$ superconductors. Here, we use DC-transport and microwave circuit quantum electrodynamics (cQED) to measure directly the superfluid stiffness…
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The physics of superconductivity in magic-angle twisted bilayer graphene (MATBG) is a topic of keen interest in moiré systems research, and it may provide insight into the pairing mechanism of other strongly correlated materials such as high-$T_{\mathrm{c}}$ superconductors. Here, we use DC-transport and microwave circuit quantum electrodynamics (cQED) to measure directly the superfluid stiffness of superconducting MATBG via its kinetic inductance. We find the superfluid stiffness to be much larger than expected from conventional single-band Fermi liquid theory; rather, it aligns well with theory involving quantum geometric effects that are dominant at the magic angle. The temperature dependence of the superfluid stiffness exhibits a power-law behavior, which contraindicates an isotropic BCS model; instead, the extracted power-law exponents indicate an anisotropic superconducting gap, whether interpreted using the conventional anisotropic BCS model or a quantum geometric theory of flat-band superconductivity. Moreover, the quadratic dependence of the stiffness on both DC and microwave current is consistent with Ginzburg-Landau theory. Taken together, these findings strongly suggest a connection between quantum geometry, superfluid stiffness, and unconventional superconductivity in MATBG. Finally, the combined DC-microwave measurement platform used here is applicable to the investigation of other atomically thin superconductors.
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Submitted 19 June, 2024;
originally announced June 2024.
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A minimalist approach to 3D photoemission orbital tomography: algorithms and data requirements
Authors:
Thi Lan Dinh,
G. S. Matthijs Jansen,
D. Russell Luke,
Wiebke Bennecke,
Stefan Mathias
Abstract:
Photoemission orbital tomography provides direct access from laboratory measurements to the real-space molecular orbitals of well-ordered organic semiconductor layers. Specifically, the application of phase retrieval algorithms to photon-energy- and angle-resolved photoemission data enables the direct reconstruction of full 3D molecular orbitals without the need for simulations using density funct…
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Photoemission orbital tomography provides direct access from laboratory measurements to the real-space molecular orbitals of well-ordered organic semiconductor layers. Specifically, the application of phase retrieval algorithms to photon-energy- and angle-resolved photoemission data enables the direct reconstruction of full 3D molecular orbitals without the need for simulations using density functional theory or the like. A major limitation for the direct approach has been the need for densely-sampled, well-calibrated 3D photoemission patterns. Here, we present an iterative projection algorithm that completely eliminates this challenge: for the benchmark case of the pentacene frontier orbitals, we demonstrate the reconstruction of the full orbital based on a dataset containing only four simulated photoemission momentum measurements. We discuss the algorithm performance, sampling requirements with respect to the photon energy, optimal measurement strategies, and the accuracy of orbital images that can be achieved.
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Submitted 31 January, 2024;
originally announced February 2024.
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Nonlinear optical diode effect in a magnetic Weyl semimetal
Authors:
Christian Tzschaschel,
Jian-Xiang Qiu,
Xue-Jian Gao,
Hou-Chen Li,
Chunyu Guo,
Hung-Yu Yang,
Cheng-** Zhang,
Ying-Ming Xie,
Yu-Fei Liu,
Anyuan Gao,
Damien Bérubé,
Thao Dinh,
Sheng-Chin Ho,
Yuqiang Fang,
Fuqiang Huang,
Johanna Nordlander,
Qiong Ma,
Fazel Tafti,
Philip J. W. Moll,
Kam Tuen Law,
Su-Yang Xu
Abstract:
Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimeta…
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Diode effects are of great interest for both fundamental physics and modern technologies. Electrical diode effects (nonreciprocal transport) have been observed in Weyl systems. Optical diode effects arising from the Weyl fermions have been theoretically considered but not probed experimentally. Here, we report the observation of a nonlinear optical diode effect (NODE) in the magnetic Weyl semimetal CeAlSi, where the magnetization introduces a pronounced directionality in the nonlinear optical second-harmonic generation (SHG). We show demonstrate a six-fold change of the measured SHG intensity between opposite propagation directions over a bandwidth exceeding 250 meV. Supported by density-functional theory, we establish the linearly dispersive bands emerging from Weyl nodes as the origin of this broadband effect. We further demonstrate current-induced magnetization switching and thus electrical control of the NODE. Our results advance ongoing research to identify novel nonlinear optical/transport phenomena in magnetic topological materials and further opens new pathways for the unidirectional manipulation of light.
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Submitted 8 April, 2024; v1 submitted 28 July, 2023;
originally announced July 2023.
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Quantum metric nonlinear Hall effect in a topological antiferromagnetic heterostructure
Authors:
Anyuan Gao,
Yu-Fei Liu,
Jian-Xiang Qiu,
Barun Ghosh,
Thaís V. Trevisan,
Yugo Onishi,
Chaowei Hu,
Tiema Qian,
Hung-Ju Tien,
Shao-Wen Chen,
Mengqi Huang,
Damien Bérubé,
Houchen Li,
Christian Tzschaschel,
Thao Dinh,
Zhe Sun,
Sheng-Chin Ho,
Shang-Wei Lien,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Hsin Lin,
Tay-Rong Chang,
Chunhui Rita Du
, et al. (6 additional authors not shown)
Abstract:
Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferroma…
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Quantum geometry - the geometry of electron Bloch wavefunctions - is central to modern condensed matter physics. Due to the quantum nature, quantum geometry has two parts, the real part quantum metric and the imaginary part Berry curvature. The studies of Berry curvature have led to countless breakthroughs, ranging from the quantum Hall effect in 2DEGs to the anomalous Hall effect (AHE) in ferromagnets. However, in contrast to Berry curvature, the quantum metric has rarely been explored. Here, we report a new nonlinear Hall effect induced by quantum metric by interfacing even-layered MnBi2Te4 (a PT-symmetric antiferromagnet (AFM)) with black phosphorus. This novel nonlinear Hall effect switches direction upon reversing the AFM spins and exhibits distinct scaling that suggests a non-dissipative nature. Like the AHE brought Berry curvature under the spotlight, our results open the door to discovering quantum metric responses. Moreover, we demonstrate that the AFM can harvest wireless electromagnetic energy via the new nonlinear Hall effect, therefore enabling intriguing applications that bridges nonlinear electronics with AFM spintronics.
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Submitted 23 July, 2023; v1 submitted 15 June, 2023;
originally announced June 2023.
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Axion optical induction of antiferromagnetic order
Authors:
Jian-Xiang Qiu,
Christian Tzschaschel,
Junyeong Ahn,
Anyuan Gao,
Houchen Li,
Xin-Yue Zhang,
Barun Ghosh,
Chaowei Hu,
Yu-Xuan Wang,
Yu-Fei Liu,
Damien Bérubé,
Thao Dinh,
Zhenhao Gong,
Shang-Wei Lien,
Sheng-Chin Ho,
Bahadur Singh,
Kenji Watanabe,
Takashi Taniguchi,
David C. Bell,
Hai-Zhou Lu,
Arun Bansil,
Hsin Lin,
Tay-Rong Chang,
Brian B. Zhou,
Qiong Ma
, et al. (3 additional authors not shown)
Abstract:
Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics…
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Using circularly-polarized light to control quantum matter is a highly intriguing topic in physics, chemistry and biology. Previous studies have demonstrated helicity-dependent optical control of spatial chirality and magnetization $M$. The former is central for asymmetric synthesis in chemistry and homochirality in bio-molecules, while the latter is of great interest for ferromagnetic spintronics. In this paper, we report the surprising observation of helicity-dependent optical control of fully-compensated antiferromagnetic (AFM) order in 2D even-layered MnBi$_2$Te$_4$, a topological Axion insulator with neither chirality nor $M$. We further demonstrate helicity-dependent optical creation of AFM domain walls by double induction beams and the direct reversal of AFM domains by ultrafast pulses. The control and reversal of AFM domains and domain walls by light helicity have never been achieved in any fully-compensated AFM. To understand this optical control, we study a novel type of circular dichroism (CD) proportional to the AFM order, which only appears in reflection but is absent in transmission. We show that the optical control and CD both arise from the optical Axion electrodynamics, which can be visualized as a Berry curvature real space dipole. Our Axion induction provides the possibility to optically control a family of $\mathcal{PT}$-symmetric AFMs such as Cr$_2$O$_3$, CrI$_3$ and possibly novel states in cuprates. In MnBi$_2$Te$_4$, this further opens the door for optical writing of dissipationless circuit formed by topological edge states.
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Submitted 9 March, 2023;
originally announced March 2023.
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Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits
Authors:
Joel I-J. Wang,
Megan A. Yamoah,
Qing Li,
Amir H. Karamlou,
Thao Dinh,
Bharath Kannan,
Jochen Braumueller,
David Kim,
Alexander J. Melville,
Sarah E. Muschinske,
Bethany M. Niedzielski,
Kyle Serniak,
Youngkyu Sung,
Roni Winik,
Jonilyn L. Yoder,
Mollie Schwartz,
Kenji Watanabe,
Takashi Taniguchi,
Terry P. Orlando,
Simon Gustavsson,
Pablo Jarillo-Herrero,
William D. Oliver
Abstract:
Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the quality factor of parallel-plate capacitors (PPCs) made of NbSe$_{2}$-hBN-NbSe$_{2}$ heterostructures integrated into superconducting circuits. The extracted mi…
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Dielectrics with low loss at microwave frequencies are imperative for high-coherence solid-state quantum computing platforms. We study the dielectric loss of hexagonal boron nitride (hBN) thin films in the microwave regime by measuring the quality factor of parallel-plate capacitors (PPCs) made of NbSe$_{2}$-hBN-NbSe$_{2}$ heterostructures integrated into superconducting circuits. The extracted microwave loss tangent of hBN is bounded to be at most in the mid-10$^{-6}$ range in the low temperature, single-photon regime. We integrate hBN PPCs with aluminum Josephson junctions to realize transmon qubits with coherence times reaching 25 $μ$s, consistent with the hBN loss tangent inferred from resonator measurements. The hBN PPC reduces the qubit feature size by approximately two-orders of magnitude compared to conventional all-aluminum coplanar transmons. Our results establish hBN as a promising dielectric for building high-coherence quantum circuits with substantially reduced footprint and, with a high energy participation that helps to reduce unwanted qubit cross-talk.
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Submitted 14 January, 2022; v1 submitted 31 August, 2021;
originally announced September 2021.
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Quantitative Marcinkiewicz's theorem and central limit theorems: applications to spin systems and point processes
Authors:
Tien-Cuong Dinh,
Subhroshekhar Ghosh,
Hoang-Son Tran,
Manh-Hung Tran
Abstract:
The classical Marcinkiewicz theorem states that if an entire characteristic function $Ψ$ of a non-degenerate real-valued random variable $X$ is of the form $\exp(P(u))$ for some polynomial $P$, then $X$ has to be a Gaussian. In this work, we obtain a broad, quantitative extension of this framework in several directions, establish central limit theorems (CLTs) with explicit rates of convergence, an…
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The classical Marcinkiewicz theorem states that if an entire characteristic function $Ψ$ of a non-degenerate real-valued random variable $X$ is of the form $\exp(P(u))$ for some polynomial $P$, then $X$ has to be a Gaussian. In this work, we obtain a broad, quantitative extension of this framework in several directions, establish central limit theorems (CLTs) with explicit rates of convergence, and demonstrate Gaussian fluctuations in continuous spin systems and general classes of point processes. In particular, we obtain quantitative decay estimates on the Kolmogorov-Smirnov distance between $X$ and a Gaussian under the condition that $Ψ$ does not vanish only on a bounded disk. This leads to quantitative CLTs applicable to very general and possibly strongly dependent random systems. In spite of the general applicability, our rates for the CLT match the classic Berry-Esseen bounds for independent sums up to a log factor. We implement this programme for two important classes of models in probability and statistical physics. First, we extend to the setting of continuous spins a popular paradigm for obtaining CLTs for discrete spin systems that is based on the theory of Lee-Yang zeros, focussing in particular on the XY model, Heisenberg ferromagnets and generalised Ising models. Secondly, we establish Gaussian fluctuations for linear statistics of so-called $α$-determinantal processes for $α\in \mathbb{R}$ (including the usual determinantal, Poisson and permanental processes) under very general conditions, including in particular higher dimensional settings where structural alternatives such as random matrix techniques are not available. Our applications demonstrate the significance of having to control the characteristic function only on a (small) disk, and lead to CLTs which, to the best of our knowledge, are not known in generality.
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Submitted 25 July, 2021; v1 submitted 18 July, 2021;
originally announced July 2021.
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Configure polaritons in twisted $α$-MoO3
Authors:
M. Chen,
X. Lin,
T. Dinh,
Z. Zheng,
J. Shen,
Q. Ma,
H. Chen,
P. Jarillo-Herrero,
S. Dai
Abstract:
Moire engineering as a configuration method to twist van der Waals materials has delivered a series of advances in electronics, magnetics and optics. Yet these advances stem from peculiar moire superlattices which form at small specific twisting angles. Here we report the configuration of nanoscale light-matter waves-the polaritons-by twisting stacked $α$-phase molybdenum trioxide $α$-MoO3 slabs i…
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Moire engineering as a configuration method to twist van der Waals materials has delivered a series of advances in electronics, magnetics and optics. Yet these advances stem from peculiar moire superlattices which form at small specific twisting angles. Here we report the configuration of nanoscale light-matter waves-the polaritons-by twisting stacked $α$-phase molybdenum trioxide $α$-MoO3 slabs in the broad range of 0$^o$ to 90$^o$. Our combined experimental and theoretical results reveal a variety of polariton wavefront geometry and topological transitions via the twisting. The polariton twisting configuration is attributed to the electromagnetic interaction of highly anisotropic hyperbolic polaritons in stacked $α$-MoO3 slabs. The nano-polaritons demonstrated in twisted $α$-MoO3 hold the promise as tailored nano-light for on-demand nanophotonic functionalities.
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Submitted 30 April, 2020;
originally announced April 2020.
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Optical detection and manipulation of spontaneous gyrotropic electronic order in a transition-metal dichalcogenide semimetal
Authors:
Su-Yang Xu,
Qiong Ma,
Yang Gao,
Anshul Kogar,
Guo Zong,
Andres M. Mier Valdivia,
Thao H. Dinh,
Shin-Ming Huang,
Bahadur Singh,
Chuang-Han Hsu,
Tay-Rong Chang,
Jacob P. C. Ruff,
Kenji Watanabe,
Takashi Taniguchi,
Tay-Rong Chang,
Hsin Lin,
Goran Karapetrov,
Di Xiao,
Pablo Jarillo-Herrero,
Nuh Gedik
Abstract:
The observation of chirality is ubiquitous in nature. Contrary to intuition, the population of opposite chiralities is surprisingly asymmetric at fundamental levels. Examples range from parity violation in the subatomic weak force to the homochirality in essential biomolecules. The ability to achieve chirality-selective synthesis (chiral induction) is of great importance in stereochemistry, molecu…
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The observation of chirality is ubiquitous in nature. Contrary to intuition, the population of opposite chiralities is surprisingly asymmetric at fundamental levels. Examples range from parity violation in the subatomic weak force to the homochirality in essential biomolecules. The ability to achieve chirality-selective synthesis (chiral induction) is of great importance in stereochemistry, molecular biology and pharmacology. In condensed matter physics, a crystalline electronic system is geometrically chiral when it lacks any mirror plane, space inversion center or roto-inversion axis. Typically, the geometrical chirality is predefined by a material's chiral lattice structure, which is fixed upon the formation of the crystal. By contrast, a particularly unconventional scenario is the gyrotropic order, where chirality spontaneously emerges across a phase transition as the electron system breaks the relevant symmetries of an originally achiral lattice. Such a gyrotropic order, proposed as the quantum analogue of the cholesteric liquid crystals, has attracted significant interest. However, to date, a clear observation and manipulation of the gyrotropic order remain challenging. We report the realization of optical chiral induction and the observation of a gyrotropically ordered phase in the transition-metal dichalcogenide semimetal $1T$-TiSe$_2$. We show that shining mid-infrared circularly polarized light near the critical temperature leads to the preferential formation of one chiral domain. As a result, we are able to observe an out-of-plane circular photogalvanic current, whose direction depends on the optical induction. Our study provides compelling evidence for the spontaneous emergence of chirality in the correlated semimetal TiSe$_2$. Such chiral induction provides a new way of optical control over novel orders in quantum materials.
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Submitted 30 October, 2019;
originally announced October 2019.
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Giant intrinsic photoresponse in pristine graphene
Authors:
Qiong Ma,
Chun Hung Lui,
Justin C. W. Song,
Yuxuan Lin,
Jian Feng Kong,
Yuan Cao,
Thao H. Dinh,
Nityan L. Nair,
Wen**g Fang,
Kenji Watanabe,
Takashi Taniguchi,
Su-Yang Xu,
**g Kong,
Tomás Palacios,
Nuh Gedik,
Nathaniel M. Gabor,
Pablo Jarillo-Herrero
Abstract:
When the Fermi level matches the Dirac point in graphene, the reduced charge screening can dramatically enhance electron-electron (e-e) scattering to produce a strongly interacting Dirac liquid. While the dominance of e-e scattering already leads to novel behaviors, such as electron hydrodynamic flow, further exotic phenomena have been predicted to arise specifically from the unique kinematics of…
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When the Fermi level matches the Dirac point in graphene, the reduced charge screening can dramatically enhance electron-electron (e-e) scattering to produce a strongly interacting Dirac liquid. While the dominance of e-e scattering already leads to novel behaviors, such as electron hydrodynamic flow, further exotic phenomena have been predicted to arise specifically from the unique kinematics of e-e scattering in massless Dirac systems. Here, we use optoelectronic probes, which are highly sensitive to the kinematics of electron scattering, to uncover a giant intrinsic photocurrent response in pristine graphene. This photocurrent emerges exclusively at the charge neutrality point and vanishes abruptly at non-zero charge densities. Moreover, it is observed at places with broken reflection symmetry, and it is selectively enhanced at free graphene edges with sharp bends. Our findings reveal that the photocurrent relaxation is strongly suppressed by a drastic change of fast photocarrier kinematics in graphene when its Fermi level matches the Dirac point. The emergence of robust photocurrents in neutral Dirac materials promises new energy-harvesting functionalities and highlights intriguing electron dynamics in the optoelectronic response of Dirac fluids.
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Submitted 17 December, 2018;
originally announced December 2018.
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Strain effect in highly-doped n-type 3C-SiC-on-glass substrate for mechanical sensors and mobility enhancement
Authors:
Hoan-Phuong Phan,
Tuan-Khoa Nguyen,
Toan Dinh,
Han-Hao Cheng,
Fengwen Mu,
Alan Iacopi,
Leonie Hold,
Tadatomo Suga,
Dzung Viet Dao,
Debbie G. Senesky,
Nam-Trung Nguyen
Abstract:
This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of -8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highl…
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This work reports the strain effect on the electrical properties of highly doped n-type single crystalline cubic silicon carbide (3C-SiC) transferred onto a 6-inch glass substrate employing an anodic bonding technique. The experimental data shows high gauge factors of -8.6 in longitudinal direction and 10.5 in transverse direction along the [100] orientation. The piezoresistive effect in the highly doped 3C-SiC film also exhibits an excellent linearity and consistent reproducibility after several bending cycles. The experimental result was in good agreement with the theoretical analysis based on the phenomenon of electron transfer between many valleys in the conduction band of n-type 3C-SiC. Our finding for the large gauge factor in n-type 3C- SiC coupled with the elimination of the current leak to the insulated substrate could pave the way for the development of single crystal SiC-on-glass based MEMS applications.
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Submitted 22 February, 2018;
originally announced February 2018.
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Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification
Authors:
Hoang-Phuong Phan,
Tuan-Khoa Nguyen,
Toan Dinh,
Ina Ginosuke,
Atieh Ranjbar Kermany,
Afzaal Qamar,
Jisheng Han,
Takahiro Namazu,
Maeda Ryutaro,
Dzung Viet Dao,
Nam-Trung Nguyen
Abstract:
Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical…
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Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nano strain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes, and the development of ultra sensitive mechanical sensors.
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Submitted 4 January, 2017;
originally announced January 2017.
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Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects
Authors:
Hoang-Phuong Phan,
Toan Dinh,
Takahiro Kozeki,
Tuan-Khoa Nguyen,
Afzaal Qamar,
Takahiro Namazu,
Nam-Trung Nguyen,
Dzung Viet Dao
Abstract:
This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significan…
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This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.
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Submitted 15 July, 2016;
originally announced July 2016.
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An extended density matrix model applied to silicon-based terahertz quantum cascade lasers
Authors:
T. V. Dinh,
A. Valavanis,
L. J. M. Lever,
Z. Ikonić,
R. W. Kelsall
Abstract:
Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device designs. We describe a density matrix transport model that is designed to be more general than those in previous studies and to require less a priori knowlege…
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Silicon-based terahertz quantum cascade lasers (QCLs) offer potential advantages over existing III-V devices. Although coherent electron transport effects are known to be important in QCLs, they have never been considered in Si-based device designs. We describe a density matrix transport model that is designed to be more general than those in previous studies and to require less a priori knowlege of electronic bandstructure, allowing its use in semi-automated design procedures. The basis of the model includes all states involved in interperiod transport, and our steady-state solution extends beyond the rotating-wave approximation by including DC and counter-propagating terms. We simulate the potential performance of bound-to-continuum Ge/SiGe QCLs and find that devices with 4-5-nm-thick barriers give the highest simulated optical gain. We also examine the effects of interdiffusion between Ge and SiGe layers; we show that if it is taken into account in the design, interdiffusion lengths of up to 1.5 nm do not significantly affect the simulated device performance.
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Submitted 1 June, 2012;
originally announced June 2012.
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Material configurations for n-type silicon-based terahertz quantum cascade lasers
Authors:
A. Valavanis,
T. V. Dinh,
L. J. M. Lever,
Z. Ikonić,
R. W. Kelsall
Abstract:
Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a variety of n-type SiGe-based heterostructures as design candidates, however the optimal material configuration remains unclear. In this work, an optimization algorithm is used to design equivalent THz QCLs in three recently-…
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Silicon-based quantum cascade lasers (QCLs) offer the prospect of integrating coherent THz radiation sources with silicon microelectronics. Theoretical studies have proposed a variety of n-type SiGe-based heterostructures as design candidates, however the optimal material configuration remains unclear. In this work, an optimization algorithm is used to design equivalent THz QCLs in three recently-proposed configurations [(001) Ge/GeSi, (001) Si/SiGe and (111) Si/SiGe], with emission frequencies of 3 and 4 THz. A systematic comparison of the electronic and optical properties is presented. A semi-classical electron transport simulation is used to model the charge carrier dynamics and calculate the peak gain, the corresponding current density and the maximum operating temperature. It is shown that (001) Ge/GeSi structures yield the best simulated performance at both emission frequencies.
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Submitted 9 April, 2011;
originally announced April 2011.
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Ground states of anisotropic antiferromagnets with single ion and cubic anisotropy
Authors:
T. -C. Dinh,
R. Folk
Abstract:
Anisotropic antiferromagnets in an external magnetic field show a rich variety of different ground states meeting in transition lines and multicritical points. We study the dependence of the ground states of these systems in the three dimensional space on physical parameters as exchange, single ion and cubic anisotropy.
One identifies four different ground states: the paramagnetic (PM), the an…
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Anisotropic antiferromagnets in an external magnetic field show a rich variety of different ground states meeting in transition lines and multicritical points. We study the dependence of the ground states of these systems in the three dimensional space on physical parameters as exchange, single ion and cubic anisotropy.
One identifies four different ground states: the paramagnetic (PM), the antiferromagnetic (AF), the spin flop (SF) and the biconical (BC) ground state. In the case of absence of a cubic anisotropy the transition lines separating the different ground states can be calculated analytically, otherwise they have to be calculated numerically. We also considered the behavior of the staggered magnetization which characterizes the different ground states. From its behavior the order of the transition from one state to the other is determined. But also the order of the transition changes along the transition lines when including the cubic anisotropy, especially at the reeentrant region where a transition from SF to BC and back to SF by increasing the external field $H$ occurs. Multicritical points are founded which are assumed to be tricritical or critical endpoints. The results obtained may be relevant for other systems since the antiferromagnetic model can be mapped to a lattice gas model where the biconical ground state is interpreted as supersolid phase. Recent renormalization group calculations show that such a phase would indicate the existence of a tetracritical point.
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Submitted 9 July, 2009;
originally announced July 2009.
