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Ultrafast terahertz field control of the emergent magnetic and electronic interactions at oxide interfaces
Authors:
A. M. Derrico,
M. Basini,
V. Unikandanunni,
J. R. Paudel,
M. Kareev,
M. Terilli,
T. -C. Wu,
A. Alostaz,
C. Klewe,
P. Shafer,
A. Gloskovskii,
C. Schlueter,
C. M. Schneider,
J. Chakhalian,
S. Bonetti,
A. X. Gray
Abstract:
Ultrafast electric-field control of emergent electronic and magnetic states at oxide interfaces offers exciting prospects for the development of new generations of energy-efficient devices. Here, we demonstrate that the electronic structure and emergent ferromagnetic interfacial state in epitaxial LaNiO3/CaMnO3 superlattices can be effectively controlled using intense single-cycle THz electric-fie…
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Ultrafast electric-field control of emergent electronic and magnetic states at oxide interfaces offers exciting prospects for the development of new generations of energy-efficient devices. Here, we demonstrate that the electronic structure and emergent ferromagnetic interfacial state in epitaxial LaNiO3/CaMnO3 superlattices can be effectively controlled using intense single-cycle THz electric-field pulses. We employ a combination of polarization-dependent X-ray absorption spectroscopy with magnetic circular dichroism and X-ray resonant magnetic reflectivity to measure a detailed magneto-optical profile and thickness of the ferromagnetic interfacial layer. Then, we use time-resolved and temperature-dependent magneto-optical Kerr effect, along with transient optical reflectivity and transmissivity measurements, to disentangle multiple correlated electronic and magnetic processes driven by ultrafast high-field (~1 MV/cm) THz pulses. These processes include an initial sub-picosecond electronic response, consistent with non-equilibrium Joule heating; a rapid (~270 fs) demagnetization of the ferromagnetic interfacial layer, driven by THz-field-induced nonequilibrium spin-polarized currents; and subsequent multi-picosecond dynamics, possibly indicative of a change in the magnetic state of the superlattice due to the transfer of spin angular momentum to the lattice. Our findings shed light on the intricate interplay of electronic and magnetic phenomena in this strongly correlated material system, suggesting a promising avenue for efficient control of two-dimensional ferromagnetic states at oxide interfaces using ultrafast electric-field pulses.
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Submitted 6 February, 2024;
originally announced February 2024.
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Direct experimental evidence of tunable charge transfer at the $LaNiO_{3}/CaMnO_{3}$ ferromagnetic interface
Authors:
J. R. Paudel,
M. Terilli,
T. -C. Wu,
J. D. Grassi,
A. M. Derrico,
R. K. Sah,
M. Kareev,
C. Klewe,
P. Shafer,
A. Gloskovskii,
C. Schlueter,
V. N. Strocov,
J. Chakhalian,
A. X. Gray
Abstract:
Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this letter, we utilize a combination of depth-resolved soft X-ray standing-wave and…
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Interfacial charge transfer in oxide heterostructures gives rise to a rich variety of electronic and magnetic phenomena. Designing heterostructures where one of the thin-film components exhibits a metal-insulator transition opens a promising avenue for controlling such phenomena both statically and dynamically. In this letter, we utilize a combination of depth-resolved soft X-ray standing-wave and hard X-ray photoelectron spectroscopies in conjunction with polarization-dependent X-ray absorption spectroscopy to investigate the effects of the metal-insulator transition in $LaNiO_{3}$ on the electronic and magnetic states at the $LaNiO_{3}/CaMnO_{3}$ interface. We report on a direct observation of the reduced effective valence state of the interfacial Mn cations in the metallic superlattice with an above-critical $LaNiO_{3}$ thickness (6 u.c.) due to the leakage of itinerant Ni 3d $e_{g}$ electrons into the interfacial $CaMnO_{3}$ layer. Conversely, in an insulating superlattice with a below-critical $LaNiO_{3}$ thickness of 2 u.c., a homogeneous effective valence state of Mn is observed throughout the $CaMnO_{3}$ layers due to the blockage of charge transfer across the interface. The ability to switch and tune interfacial charge transfer enables precise control of the emergent ferromagnetic state at the $LaNiO_{3}/CaMnO_{3}$ interface and, thus, has far-reaching consequences on the future strategies for the design of next-generation spintronic devices.
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Submitted 13 April, 2023;
originally announced April 2023.
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Modulation-Do** a Correlated Electron Insulator
Authors:
Debasish Mondal,
Smruti Rekha Mahapatra,
Abigail M Derrico,
Rajeev Kumar Rai,
Jay R Paudel,
Christoph Schlueter,
Andrei Gloskovskii,
Rajdeep Banerjee,
Frank M F DeGroot,
Dipankar D Sarma,
Awadhesh Narayan,
Pavan Nukala,
Alexander X Gray,
Naga Phani B Aetukuri
Abstract:
Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modu…
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Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at do** concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-do** as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.
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Submitted 7 January, 2023;
originally announced January 2023.
