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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Quantum Chaos and Universal Trotterisation Behaviours in Digital Quantum Simulations
Authors:
Cahit Kargi,
Juan Pablo Dehollain,
Lukas M. Sieberer,
Fabio Henriques,
Tobias Olsacher,
Philipp Hauke,
Markus Heyl,
Peter Zoller,
Nathan K. Langford
Abstract:
Digital quantum simulation (DQS) is one of the most promising paths for achieving first useful real-world applications for quantum processors. Yet even assuming rapid progress in device engineering and development of fault-tolerant quantum processors, algorithmic resource optimisation will long remain crucial to exploit their full power. Currently, Trotterisation provides state-of-the-art resource…
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Digital quantum simulation (DQS) is one of the most promising paths for achieving first useful real-world applications for quantum processors. Yet even assuming rapid progress in device engineering and development of fault-tolerant quantum processors, algorithmic resource optimisation will long remain crucial to exploit their full power. Currently, Trotterisation provides state-of-the-art resource scaling. And recent theoretical studies of Trotterised Ising models suggest that even better performance than expected may be possible up to a distinct breakdown threshold in empirical performance. Here, we study multiple paradigmatic DQS models with experimentally realisable Trotterisations, and evidence the universality of a range of Trotterisation performance behaviours, including not only the threshold, but also new features in the pre-threshold regime that is most important for practical applications. In each model, we observe a distinct Trotterisation threshold shared across widely varying performance signatures; we further show that an onset of quantum chaotic dynamics causes the performance breakdown and is directly induced by digitisation errors. In the important pre-threshold regime, we are able to identify new distinct regimes displaying qualitatively different quasiperiodic performance behaviours, and show analytic behaviour for properly defined operational Trotter errors. Our results rely crucially on diverse new analytical tools, and provide a previously missing unified picture of Trotterisation behaviour across local observables, the global quantum state, and the full Trotterised unitary. This work provides new insights and tools for addressing important questions about the algorithm performance and underlying theoretical principles of sufficiently complex Trotterisation-based DQS, that will help in extracting maximum simulation power from future quantum processors.
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Submitted 4 May, 2023; v1 submitted 21 October, 2021;
originally announced October 2021.
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Spiderweb array: A sparse spin-qubit array
Authors:
Jelmer M. Boter,
Juan P. Dehollain,
Jeroen P. G. van Dijk,
Yuanxing Xu,
Toivo Hensgens,
Richard Versluis,
Henricus W. L. Naus,
James S. Clarke,
Menno Veldhorst,
Fabio Sebastiano,
Lieven M. K. Vandersypen
Abstract:
One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowin…
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One of the main bottlenecks in the pursuit of a large-scale--chip-based quantum computer is the large number of control signals needed to operate qubit systems. As system sizes scale up, the number of terminals required to connect to off-chip control electronics quickly becomes unmanageable. Here, we discuss a quantum-dot spin-qubit architecture that integrates on-chip control electronics, allowing for a significant reduction in the number of signal connections at the chip boundary. By arranging the qubits in a two-dimensional (2D) array with $\sim$12 $μ$m pitch, we create space to implement locally integrated sample-and-hold circuits. This allows to offset the inhomogeneities in the potential landscape across the array and to globally share the majority of the control signals for qubit operations. We make use of advanced circuit modeling software to go beyond conceptual drawings of the component layout, to assess the feasibility of the scheme through a concrete floor plan, including estimates of footprints for quantum and classical electronics, as well as routing of signal lines across the chip using different interconnect layers. We make use of local demultiplexing circuits to achieve an efficient signal-connection scaling leading to a Rent's exponent as low as $p = 0.43$. Furthermore, we use available data from state-of-the-art spin qubit and microelectronics technology development, as well as circuit models and simulations, to estimate the operation frequencies and power consumption of a million-qubit processor. This work presents a novel and complementary approach to previously proposed architectures, focusing on a feasible scheme to integrating quantum and classical hardware, and significantly closing the gap towards a fully CMOS-compatible quantum computer implementation.
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Submitted 24 August, 2022; v1 submitted 30 September, 2021;
originally announced October 2021.
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Qubits made by advanced semiconductor manufacturing
Authors:
A. M. J. Zwerver,
T. Krähenmann,
T. F. Watson,
L. Lampert,
H. C. George,
R. Pillarisetty,
S. A. Bojarski,
P. Amin,
S. V. Amitonov,
J. M. Boter,
R. Caudillo,
D. Corras-Serrano,
J. P. Dehollain,
G. Droulers,
E. M. Henry,
R. Kotlyar,
M. Lodari,
F. Luthi,
D. J. Michalak,
B. K. Mueller,
S. Neyens,
J. Roberts,
N. Samkharadze,
G. Zheng,
O. K. Zietz
, et al. (4 additional authors not shown)
Abstract:
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr…
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Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer
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Submitted 29 January, 2021;
originally announced January 2021.
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Mesoscopic Elastic Distortions in GaAs Quantum Dot Heterostructures
Authors:
Anastasios Pateras,
Joonkyu Park,
Youngjun Ahn,
Jack A. Tilka,
Martin V. Holt,
Christian Reichl,
Werner Wegscheider,
Timothy A. Baart,
Juan Pablo Dehollain,
Uditendu Mukhopadhyay,
Lieven M. K. Vandersypen,
Paul G. Evans
Abstract:
Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic ele…
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Quantum devices formed in high-electron-mobility semiconductor heterostructures provide a route through which quantum mechanical effects can be exploited on length scales accessible to lithography and integrated electronics. The electrostatic definition of quantum dots in semiconductor heterostructure devices intrinsically involves the lithographic fabrication of intricate patterns of metallic electrodes. The formation of metal/semiconductor interfaces, growth processes associated with polycrystalline metallic layers, and differential thermal expansion produce elastic distortion in the active areas of quantum devices. Understanding and controlling these distortions presents a significant challenge in quantum device development. We report synchrotron x-ray nanodiffraction measurements combined with dynamical x-ray diffraction modeling that reveal lattice tilts with a depth-averaged value up to 0.04 deg. and strain on the order of 10^-4 in the two-dimensional electron gas (2DEG) in a GaAs/AlGaAs heterostructure. Elastic distortions in GaAs/AlGaAs heterostructures modify the potential energy landscape in the 2DEG due to the generation of a deformation potential and an electric field through the piezoelectric effect. The stress induced by metal electrodes directly impacts the ability to control the positions of the potential minima where quantum dots form and the coupling between neighboring quantum dots.
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Submitted 25 February, 2020;
originally announced February 2020.
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A sparse spin qubit array with integrated control electronics
Authors:
Jelmer M. Boter,
Juan P. Dehollain,
Jeroen P. G. van Dijk,
Toivo Hensgens,
Richard Versluis,
James S. Clarke,
Menno Veldhorst,
Fabio Sebastiano,
Lieven M. K. Vandersypen
Abstract:
Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer.
Current implementations of quantum computers suffer from large numbers of control lines per qubit, becoming unmanageable with system scale up. Here, we discuss a sparse spin-qubit architecture featuring integrated control electronics significantly reducing the off-chip wire count. This quantum-classical hardware integration closes the feasibility gap towards a CMOS quantum computer.
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Submitted 13 December, 2019;
originally announced December 2019.
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Ab Initio Exact Diagonalization Simulation of the Nagaoka Transition in Quantum Dots
Authors:
Yao Wang,
Juan Pablo Dehollain,
Fang Liu,
Uditendu Mukhopadhyay,
Mark S. Rudner,
Lieven M. K. Vandersypen,
Eugene Demler
Abstract:
Recent progress of quantum simulators provides insight into the fundamental problems of strongly correlated systems. To adequately assess the accuracy of these simulators, the precise modeling of the many-body physics, with accurate model parameters, is crucially important. In this paper, we introduce an \emph{ab intio} exact diagonalization framework to compute the correlated physics of a few ele…
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Recent progress of quantum simulators provides insight into the fundamental problems of strongly correlated systems. To adequately assess the accuracy of these simulators, the precise modeling of the many-body physics, with accurate model parameters, is crucially important. In this paper, we introduce an \emph{ab intio} exact diagonalization framework to compute the correlated physics of a few electrons in artificial potentials. We apply this approach to a quantum-dot system and study the magnetism of the correlated electrons, obtaining good agreement with recent experimental measurements. Through dot separation, potential detuning and control of single tunneling, we examine the Nagaoka transition and determine the robustness of the ferromagnetic state. While the standard Nagaoka theorem considers only a single-band Hubbard model, in this work we perform extensive $ab$ $intio$ calculations that include realistic multi-orbital conditions in which the level splitting is smaller than the interactions. This simulation complements the experiments and provides insight into the formation of ferromagnetism in correlated systems. More generally, our calculation sets the stage for further theoretical analysis of analog quantum simulators at a quantitative level.
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Submitted 21 October, 2019; v1 submitted 2 July, 2019;
originally announced July 2019.
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Nagaoka ferromagnetism observed in a quantum dot plaquette
Authors:
Juan P. Dehollain,
Uditendu Mukhopadhyay,
Vincent P. Michal,
Yao Wang,
Bernhard Wunsch,
Christian Reichl,
Werner Wegscheider,
Mark S. Rudner,
Eugene Demler,
Lieven M. K. Vandersypen
Abstract:
Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting o…
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Engineered, highly-controllable quantum systems hold promise as simulators of emergent physics beyond the capabilities of classical computers. An important problem in many-body physics is itinerant magnetism, which originates purely from long-range interactions of free electrons and whose existence in real systems has been subject to debate for decades. Here we use a quantum simulator consisting of a four-site square plaquette of quantum dots to demonstrate Nagaoka ferromagnetism. This form of itinerant magnetism has been rigorously studied theoretically but has remained unattainable in experiment. We load the plaquette with three electrons and demonstrate the predicted emergence of spontaneous ferromagnetic correlations through pairwise measurements of spin. We find the ferromagnetic ground state is remarkably robust to engineered disorder in the on-site potentials and can induce a transition to the low-spin state by changing the plaquette topology to an open chain. This demonstration of Nagaoka ferromagnetism highlights that quantum simulators can be used to study physical phenomena that have not yet been observed in any system before. The work also constitutes an important step towards large-scale quantum dot simulators of correlated electron systems.
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Submitted 4 March, 2020; v1 submitted 11 April, 2019;
originally announced April 2019.
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Loading a quantum-dot based "Qubyte" register
Authors:
C. Volk,
A. M. J. Zwerver,
U. Mukhopadhyay,
P. T. Eendebak,
C. J. van Diepen,
J. P. Dehollain,
T. Hensgens,
T. Fujita,
C. Reichl,
W. Wegscheider,
L. M. K. Vandersypen
Abstract:
Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots i…
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Electrostatically defined quantum dot arrays offer a compelling platform for quantum computation and simulation. However, tuning up such arrays with existing techniques becomes impractical when going beyond a handful of quantum dots. Here, we present a method for systematically adding quantum dots to an array one dot at a time, in such a way that the number of electrons on previously formed dots is unaffected. The method allows individual control of the number of electrons on each of the dots, as well as of the interdot tunnel rates. We use this technique to tune up a linear array of eight GaAs quantum dots such that they are occupied by one electron each. This new method overcomes a critical bottleneck in scaling up quantum-dot based qubit registers.
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Submitted 2 January, 2019;
originally announced January 2019.
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A 2x2 quantum dot array with controllable inter-dot tunnel couplings
Authors:
Uditendu Mukhopadhyay,
Juan Pablo Dehollain,
Christian Reichl,
Werner Wegscheider,
Lieven M. K. Vandersypen
Abstract:
The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we p…
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The interaction between electrons in arrays of electrostatically defined quantum dots is naturally described by a Fermi-Hubbard Hamiltonian. Moreover, the high degree of tunability of these systems make them a powerful platform to simulate different regimes of the Hubbard model. However, most quantum dot array implementations have been limited to one-dimensional linear arrays. In this letter, we present a square lattice unit cell of 2$\times$2 quantum dots defined electrostatically in a AlGaAs/GaAs heterostructure using a double-layer gate technique. We probe the properties of the array using nearby quantum dots operated as charge sensors. We show that we can deterministically and dynamically control the charge occupation in each quantum dot in the single- to few-electron regime. Additionally, we achieve simultaneous individual control of the nearest-neighbor tunnel couplings over a range 0-40~$μ$eV. Finally, we demonstrate fast ($\sim 1$~$μ$s) single-shot readout of the spin state of electrons in the dots, through spin-to-charge conversion via Pauli spin blockade. These advances pave the way to analog quantum simulations in two dimensions, not previously accessible in quantum dot systems.
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Submitted 9 May, 2018; v1 submitted 15 February, 2018;
originally announced February 2018.
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A Crossbar Network for Silicon Quantum Dot Qubits
Authors:
R. Li,
L. Petit,
D. P. Franke,
J. P. Dehollain,
J. Helsen,
M. Steudtner,
N. K. Thomas,
Z. R. Yoscovits,
K. J. Singh,
S. Wehner,
L. M. K. Vandersypen,
J. S. Clarke,
M. Veldhorst
Abstract:
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum info…
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The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a mechanism for on-chip flying qubits. In order to increase the number of qubits to the thousands or millions of qubits needed for practical quantum information we present an architecture based on shared control and a scalable number of lines. Crucially, the control lines define the qubit grid, such that no local components are required. Our design enables qubit coupling beyond nearest neighbors, providing prospects for non-planar quantum error correction protocols. Fabrication is based on a three-layer design to define qubit and tunnel barrier gates. We show that a double stripline on top of the structure can drive high-fidelity single-qubit rotations. Qubit addressability and readout are enabled by self-aligned inhomogeneous magnetic fields induced by direct currents through superconducting gates. Qubit coupling is based on the exchange interaction, and we show that parallel two-qubit gates can be performed at the detuning noise insensitive point. While the architecture requires a high level of uniformity in the materials and critical dimensions to enable shared control, it stands out for its simplicity and provides prospects for large-scale quantum computation in the near future.
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Submitted 10 November, 2017;
originally announced November 2017.
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Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits
Authors:
J. T. Muhonen,
J. P. Dehollain,
A. Laucht,
S. Simmons,
R. Kalra,
F. E. Hudson,
D. N. Jamieson,
J. C. McCallum,
K. M. Itoh,
A. S. Dzurak,
A. Morello
Abstract:
The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be…
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The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics.
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Submitted 26 February, 2017;
originally announced February 2017.
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A single-atom quantum memory in silicon
Authors:
S. Freer,
S. Simmons,
A. Laucht,
J. T. Muhonen,
J. P. Dehollain,
R. Kalra,
F. A. Mohiyaddin,
F. Hudson,
K. M. Itoh,
J. C. McCallum,
D. N. Jamieson,
A. S. Dzurak,
A. Morello
Abstract:
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex…
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Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.
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Submitted 5 September, 2016; v1 submitted 25 August, 2016;
originally announced August 2016.
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Optimization of a solid-state electron spin qubit using Gate Set Tomography
Authors:
Juan P. Dehollain,
Juha T. Muhonen,
Robin Blume-Kohout,
Kenneth M. Rudinger,
John King Gamble,
Erik Nielsen,
Arne Laucht,
Stephanie Simmons,
Rachpon Kalra,
Andrew S. Dzurak,
Andrea Morello
Abstract:
State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography…
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State of the art qubit systems are reaching the gate fidelities required for scalable quantum computation architectures. Further improvements in the fidelity of quantum gates demands characterization and benchmarking protocols that are efficient, reliable and extremely accurate. Ideally, a benchmarking protocol should also provide information on how to rectify residual errors. Gate Set Tomography (GST) is one such protocol designed to give detailed characterization of as-built qubits. We implemented GST on a high-fidelity electron-spin qubit confined by a single $^{31}$P atom in $^{28}$Si. The results reveal systematic errors that a randomized benchmarking analysis could measure but not identify, whereas GST indicated the need for improved calibration of the length of the control pulses. After introducing this modification, we measured a new benchmark average gate fidelity of $99.942(8)\%$, an improvement on the previous value of $99.90(2)\%$. Furthermore, GST revealed high levels of non-Markovian noise in the system, which will need to be understood and addressed when the qubit is used within a fault-tolerant quantum computation scheme.
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Submitted 16 June, 2016; v1 submitted 9 June, 2016;
originally announced June 2016.
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Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin
Authors:
Arne Laucht,
Stephanie Simmons,
Rachpon Kalra,
Guilherme Tosi,
Juan P. Dehollain,
Juha T. Muhonen,
Solomon Freer,
Fay E. Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency…
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We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data.
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Submitted 1 September, 2016; v1 submitted 7 June, 2016;
originally announced June 2016.
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A Dressed Spin Qubit in Silicon
Authors:
Arne Laucht,
Rachpon Kalra,
Stephanie Simmons,
Juan P. Dehollain,
Juha T. Muhonen,
Fahd A. Mohiyaddin,
Solomon Freer,
Fay E. Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
A. Morello
Abstract:
Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp…
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Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations.
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Submitted 15 March, 2016;
originally announced March 2016.
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Vibration-induced electrical noise in a cryogen-free dilution refrigerator: characterization, mitigation, and impact on qubit coherence
Authors:
Rachpon Kalra,
Arne Laucht,
Juan P. Dehollain,
Daniel Bar,
Solomon Freer,
Stephanie Simmons,
Juha T. Muhonen,
Andrea Morello
Abstract:
Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to th…
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Cryogen-free low-temperature setups are becoming more prominent in experimental science due to their convenience and reliability, and concern about the increasing scarcity of helium as a natural resource. Despite not having any moving parts at the cold end, pulse tube cryocoolers introduce vibrations that can be detrimental to the experiments. We characterize the coupling of these vibrations to the electrical signal observed on cables installed in a cryogen-free dilution refrigerator. The dominant electrical noise is in the 5 to 10 kHz range and its magnitude is found to be strongly temperature dependent. We test the performance of different cables designed to diagnose and tackle the noise, and find triboelectrics to be the dominant mechanism coupling the vibrations to the electrical signal. Flattening a semi-rigid cable or jacketing a flexible cable in order to restrict movement within the cable, successfully reduces the noise level by over an order of magnitude. Furthermore, we characterize the effect of the pulse tube vibrations on an electron spin qubit device in this setup. Coherence measurements are used to map out the spectrum of the noise experienced by the qubit, revealing spectral components matching the spectral signature of the pulse tube.
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Submitted 7 July, 2016; v1 submitted 9 March, 2016;
originally announced March 2016.
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Bell's inequality violation with spins in silicon
Authors:
Juan P. Dehollain,
Stephanie Simmons,
Juha T. Muhonen,
Rachpon Kalra,
Arne Laucht,
Fay Hudson,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagge…
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Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagged as a single-number benchmark for the performance of quantum computing devices. Here we demonstrate deterministic, on-demand generation of two-qubit entangled states of the electron and the nuclear spin of a single phosphorus atom embedded in a silicon nanoelectronic device. By sequentially reading the electron and the nucleus, we show that these entangled states violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher value of 2.70(9) is obtained by map** the parity of the two-qubit state onto the nuclear spin, which allows for high-fidelity quantum non-demolition measurement (QND) of the parity. Furthermore, we complement the Bell inequality entanglement witness with full two-qubit state tomography exploiting QND measurement, which reveals that our prepared states match the target maximally entangled Bell states with $>$96\% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom, and show that this system is able to maintain its simultaneously high initialization, manipulation and measurement fidelities past the single-qubit regime.
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Submitted 13 April, 2015;
originally announced April 2015.
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Electrically controlling single spin qubits in a continuous microwave field
Authors:
Arne Laucht,
Juha T. Muhonen,
Fahd A. Mohiyaddin,
Rachpon Kalra,
Juan P. Dehollain,
Solomon Freer,
Fay E. Hudson,
Menno Veldhorst,
Rajib Rahman,
Gerhard Klimeck,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electr…
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Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources.
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Submitted 19 March, 2015;
originally announced March 2015.
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A Two Qubit Logic Gate in Silicon
Authors:
M. Veldhorst,
C. H. Yang,
J. C. C. Hwang,
W. Huang,
J. P. Dehollain,
J. T. Muhonen,
S. Simmons,
A. Laucht,
F. E. Hudson,
K. M. Itoh,
A. Morello,
A. S. Dzurak
Abstract:
Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok200…
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Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok2007}, single defects or atoms in diamond \cite{Waldherr2014, Dolde2014} and silicon \cite{Muhonen2014}, and semiconductor quantum dots \cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing \cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits \cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing \cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched silicon\cite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal \cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 \textmu s, thereby satisfying the criteria required for scalable quantum computation.
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Submitted 20 November, 2014;
originally announced November 2014.
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Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
Authors:
J. T. Muhonen,
A. Laucht,
S. Simmons,
J. P. Dehollain,
R. Kalra,
F. E. Hudson,
S. Freer,
K. M. Itoh,
D. N. Jamieson,
J. C. McCallum,
A. S. Dzurak,
A. Morello
Abstract:
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically p…
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Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit.
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Submitted 8 October, 2014;
originally announced October 2014.
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Coherent Control of a Single Silicon-29 Nuclear Spin Qubit
Authors:
Jarryd J. Pla,
Fahd A. Mohiyaddin,
Kuan Y. Tan,
Juan P. Dehollain,
Rajib Rahman,
Gerhard Klimeck,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spi…
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Magnetic fluctuations caused by the nuclear spins of a host crystal are often the leading source of decoherence for many types of solid-state spin qubit. In group-IV materials, the spin-bearing nuclei are sufficiently rare that it is possible to identify and control individual host nuclear spins. This work presents the first experimental detection and manipulation of a single $^{29}$Si nuclear spin. The quantum non-demolition (QND) single-shot readout of the spin is demonstrated, and a Hahn echo measurement reveals a coherence time of $T_2 = 6.3(7)$ ms - in excellent agreement with bulk experiments. Atomistic modeling combined with extracted experimental parameters provides possible lattice sites for the $^{29}$Si atom under investigation. These results demonstrate that single $^{29}$Si nuclear spins could serve as a valuable resource in a silicon spin-based quantum computer.
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Submitted 6 August, 2014;
originally announced August 2014.
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An addressable quantum dot qubit with fault-tolerant control fidelity
Authors:
M. Veldhorst,
J. C. C. Hwang,
C. H. Yang,
A. W. Leenstra,
B. de Ronde,
J. P. Dehollain,
J. T. Muhonen,
F. E. Hudson,
K. M. Itoh,
A. Morello,
A. S. Dzurak
Abstract:
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges…
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Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.
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Submitted 8 July, 2014;
originally announced July 2014.
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Single-shot readout and relaxation of singlet/triplet states in exchange-coupled $^{31}$P electron spins in silicon
Authors:
Juan P. Dehollain,
Juha T. Muhonen,
Kuan Y. Tan,
André Saraiva,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. Th…
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We present the experimental observation of a large exchange coupling $J \approx 300$ $μ$eV between two $^{31}$P electron spin qubits in silicon. The singlet and triplet states of the coupled spins are monitored in real time by a Single-Electron Transistor, which detects ionization from tunnel-rate-dependent processes in the coupled spin system, yielding single-shot readout fidelities above 95%. The triplet to singlet relaxation time $T_1 \approx 4$ ms at zero magnetic field agrees with the theoretical prediction for $J$-coupled $^{31}$P dimers in silicon. The time evolution of the 2-electron state populations gives further insight into the valley-orbit eigenstates of the donor dimer, valley selection rules and relaxation rates, and the role of hyperfine interactions. These results pave the way to the realization of 2-qubit quantum logic gates with spins in silicon, and highlight the necessity to adopt gating schemes compatible with weak $J$-coupling strengths.
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Submitted 11 June, 2014; v1 submitted 28 February, 2014;
originally announced February 2014.
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Storing quantum information for 30 seconds in a nanoelectronic device
Authors:
Juha T. Muhonen,
Juan P. Dehollain,
Arne Laucht,
Fay E. Hudson,
Takeharu Sekiguchi,
Kohei M. Itoh,
David N. Jamieson,
Jeffrey C. McCallum,
Andrew S. Dzurak,
Andrea Morello
Abstract:
The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxide…
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The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxides and interfaces [4]. For group IV materials such as silicon, enrichment of the spin-zero 28-Si isotope drastically reduces spin-bath decoherence [5]. Experiments on bulk spin ensembles in 28-Si crystals have indeed demonstrated extraordinary coherence times [6-8]. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here we present the coherent operation of individual 31-P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28-Si substrate. We report new benchmarks for coherence time (> 30 seconds) and control fidelity (> 99.99%) of any single qubit in solid state, and perform a detailed noise spectroscopy [9] to demonstrate that -- contrary to widespread belief -- the coherence is not limited by the proximity to an interface. Our results represent a fundamental advance in control and understanding of spin qubits in nanostructures.
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Submitted 28 February, 2014;
originally announced February 2014.
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High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon
Authors:
Arne Laucht,
Rachpon Kalra,
Juha T. Muhonen,
Juan P. Dehollain,
Fahd A. Mohiyaddin,
Fay Hudson,
Jeffrey C. McCallum,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses.…
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The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments.
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Submitted 17 December, 2013;
originally announced December 2013.
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A single-atom electron spin qubit in silicon
Authors:
Jarryd J. Pla,
Kuan Y. Tan,
Juan P. Dehollain,
Wee H. Lim,
John J. L. Morton,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from f…
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A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store and process quantum information in electromagnetic traps, as well as in diamond through the use of the NV-center point defect. Solid state electrical devices possess great potential to scale up such demonstrations from few-qubit control to larger scale quantum processors. In this direction, coherent control of spin qubits has been achieved in lithographically-defined double quantum dots in both GaAs and Si. However, it is a formidable challenge to combine the electrical measurement capabilities of engineered nanostructures with the benefits inherent to atomic spin qubits. Here we demonstrate the coherent manipulation of an individual electron spin qubit bound to a phosphorus donor atom in natural silicon, measured electrically via single-shot readout. We use electron spin resonance to drive Rabi oscillations, while a Hahn echo pulse sequence reveals a spin coherence time (T2) exceeding 200 μs. This figure is expected to become even longer in isotopically enriched 28Si samples. Together with the use of a device architecture that is compatible with modern integrated circuit technology, these results indicate that the electron spin of a single phosphorus atom in silicon is an excellent platform on which to build a scalable quantum computer.
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Submitted 20 May, 2013;
originally announced May 2013.
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High-fidelity readout and control of a nuclear spin qubit in silicon
Authors:
Jarryd J. Pla,
Kuan Y. Tan,
Juan P. Dehollain,
Wee H. Lim,
John J. L. Morton,
Floris A. Zwanenburg,
David N. Jamieson,
Andrew S. Dzurak,
Andrea Morello
Abstract:
A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the qu…
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A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here that such promise could be fulfilled by a single phosphorus (31P) nuclear spin in a silicon nanostructure. By integrating single-shot readout of the electron spin with on-chip electron spin resonance, we demonstrate the quantum non-demolition, electrical single-shot readout of the nuclear spin, with readout fidelity better than 99.8% - the highest for any solid-state qubit. The single nuclear spin is then operated as a qubit by applying coherent radiofrequency (RF) pulses. For an ionized 31P donor we find a nuclear spin coherence time of 60 ms and a 1-qubit gate control fidelity exceeding 98%. These results demonstrate that the dominant technology of modern electronics can be adapted to host a complete electrical measurement and control platform for nuclear spin-based quantum information processing.
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Submitted 31 January, 2013;
originally announced February 2013.
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Nanoscale broadband transmission lines for spin qubit control
Authors:
J. P. Dehollain,
J. J. Pla,
E. Siew,
K. Y. Tan,
A. S. Dzurak,
A. Morello
Abstract:
The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and nanotechnology. In this work we discuss rigourous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present…
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The intense interest in spin-based quantum information processing has caused an increasing overlap between two traditionally distinct disciplines, such as magnetic resonance and nanotechnology. In this work we discuss rigourous design guidelines to integrate microwave circuits with charge-sensitive nanostructures, and describe how to simulate such structures accurately and efficiently. We present a new design for an on-chip, broadband, nanoscale microwave line that optimizes the magnetic field driving a spin qubit, while minimizing the disturbance on a nearby charge sensor. This new structure was successfully employed in a single-spin qubit experiment, and shows that the simulations accurately predict the magnetic field values even at frequencies as high as 30 GHz.
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Submitted 23 January, 2013; v1 submitted 12 August, 2012;
originally announced August 2012.
