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Room-temperature tunable tunneling magnetoresistance in Fe3GaTe2/WSe2/Fe3GaTe2 van der Waals heterostructures
Authors:
Haiyang Pan,
Anil Kumar Singh,
Chusheng Zhang,
Xueqi Hu,
Jiayu Shi,
Liheng An,
Naizhou Wang,
Ruihuan Duan,
Zheng Liu,
S tuart S. P. Parkin,
Pritam Deb,
Weibo Gao
Abstract:
The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application o…
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The exceptional properties of two-dimensional (2D) magnet materials present a novel approach to fabricate functional magnetic tunnel junctions (MTJ) by constructing full van der Waals (vdW) heterostructures with atomically sharp and clean interfaces. The exploration of vdW MTJ devices with high working temperature and adjustable functionalities holds great potential for advancing the application of 2D materials in magnetic sensing and data storage. Here, we report the observation of highly tunable room-temperature tunneling magnetoresistance through electronic means in a full vdW Fe3GaTe2/WSe2/Fe3GaTe2 MTJ. The spin valve effect of the MTJ can be detected even with the current below 1 nA, both at low and room temperatures, yielding a tunneling magnetoresistance (TMR) of 340% at 2 K and 50% at 300 K, respectively. Importantly, the magnitude and sign of TMR can be modulated by a DC bias current, even at room temperature, a capability that was previously unrealized in full vdW MTJs. This tunable TMR arises from the contribution of energy-dependent localized spin states in the metallic ferromagnet Fe3GaTe2 during tunnel transport when a finite electrical bias is applied. Our work offers a new perspective for designing and exploring room-temperature tunable spintronic devices based on vdW magnet heterostructures.
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Submitted 5 June, 2024;
originally announced June 2024.
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Observation of Josephson Harmonics in Tunnel Junctions
Authors:
Dennis Willsch,
Dennis Rieger,
Patrick Winkel,
Madita Willsch,
Christian Dickel,
Jonas Krause,
Yoichi Ando,
Raphaël Lescanne,
Zaki Leghtas,
Nicholas T. Bronn,
Pratiti Deb,
Olivia Lanes,
Zlatko K. Minev,
Benedikt Dennig,
Simon Geisert,
Simon Günzler,
Sören Ihssen,
Patrick Paluch,
Thomas Reisinger,
Roudy Hanna,
** Hee Bae,
Peter Schüffelgen,
Detlev Grützmacher,
Luiza Buimaga-Iarinca,
Cristian Morari
, et al. (5 additional authors not shown)
Abstract:
Superconducting quantum processors have a long road ahead to reach fault-tolerant quantum computing. One of the most daunting challenges is taming the numerous microscopic degrees of freedom ubiquitous in solid-state devices. State-of-the-art technologies, including the world's largest quantum processors, employ aluminum oxide (AlO$_x$) tunnel Josephson junctions (JJs) as sources of nonlinearity,…
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Superconducting quantum processors have a long road ahead to reach fault-tolerant quantum computing. One of the most daunting challenges is taming the numerous microscopic degrees of freedom ubiquitous in solid-state devices. State-of-the-art technologies, including the world's largest quantum processors, employ aluminum oxide (AlO$_x$) tunnel Josephson junctions (JJs) as sources of nonlinearity, assuming an idealized pure $\sin\varphi$ current-phase relation (C$\varphi$R). However, this celebrated $\sin\varphi$ C$\varphi$R is only expected to occur in the limit of vanishingly low-transparency channels in the AlO$_x$ barrier. Here we show that the standard C$\varphi$R fails to accurately describe the energy spectra of transmon artificial atoms across various samples and laboratories. Instead, a mesoscopic model of tunneling through an inhomogeneous AlO$_x$ barrier predicts %-level contributions from higher Josephson harmonics. By including these in the transmon Hamiltonian, we obtain orders of magnitude better agreement between the computed and measured energy spectra. The reality of Josephson harmonics transforms qubit design and prompts a reevaluation of models for quantum gates and readout, parametric amplification and mixing, Floquet qubits, protected Josephson qubits, etc. As an example, we show that engineered Josephson harmonics can reduce the charge dispersion and the associated errors in transmon qubits by an order of magnitude, while preserving anharmonicity.
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Submitted 22 August, 2023; v1 submitted 17 February, 2023;
originally announced February 2023.
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Imaging Polarity in Two Dimensional Materials by Breaking Friedel's Law
Authors:
Pratiti Deb,
Michael C. Cao,
Yimo Han,
Megan E. Holtz,
Saien Xie,
Jiwoong Park,
Robert Hovden,
David A. Muller
Abstract:
Friedel's law guarantees an inversion-symmetric diffraction pattern for thin, light materials where a kinematic approximation or a single-scattering model holds. Typically, breaking Friedel symmetry is ascribed to multiple scattering events within thick, non-centrosymmetric crystals. However, two-dimensional (2D) materials such as a single monolayer of MoS$_2$ can also violate Friedel's law, with…
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Friedel's law guarantees an inversion-symmetric diffraction pattern for thin, light materials where a kinematic approximation or a single-scattering model holds. Typically, breaking Friedel symmetry is ascribed to multiple scattering events within thick, non-centrosymmetric crystals. However, two-dimensional (2D) materials such as a single monolayer of MoS$_2$ can also violate Friedel's law, with unexpected contrast between conjugate Bragg peaks. We show analytically that retaining higher order terms in the power series expansion of the scattered wavefunction can describe the anomalous contrast between $hkl$ and $\overline{hkl}$ peaks that occurs in 2D crystals with broken in-plane inversion symmetry. These higher-order terms describe multiple scattering paths starting from the same atom in an atomically thin material. Furthermore, 2D materials containing heavy elements, such as WS$_2$, always act as strong phase objects, violating Friedel's law no matter how high the energy of the incident electron beam. Experimentally, this understanding can enhance diffraction-based techniques to provide rapid imaging of polarity, twin domains, in-plane rotations, or other polar textures in 2D materials.
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Submitted 6 May, 2020;
originally announced May 2020.
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Magnetic memory effect in ensembles of interacting anisotropic magnetic nanoparticles
Authors:
Korobi Konwar,
Som Datta Kaushik,
Debasis Sen,
Pritam Deb
Abstract:
We explore the influence of demagnetization interaction on magnetic memory effect by varying organization geometry of anisotropic ZnFe$_2$O$_4$ nanoparticles in an ensemble. The static and dynamic behaviour of two differently organized ensembles, compact ensemble (CE) and hollow core ensemble (HCE), are extensively studied by both dc and ac susceptibility, magnetic memory effect and spin relaxatio…
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We explore the influence of demagnetization interaction on magnetic memory effect by varying organization geometry of anisotropic ZnFe$_2$O$_4$ nanoparticles in an ensemble. The static and dynamic behaviour of two differently organized ensembles, compact ensemble (CE) and hollow core ensemble (HCE), are extensively studied by both dc and ac susceptibility, magnetic memory effect and spin relaxation. The frequency-dependence peak shifting of freezing temperature in both the systems is analyzed properly with the help of two dynamic scaling models: Vogel-Fulcher law and power law. Presence of cluster spin-glass phase is reflected from Vogel-Fulcher temperature $T_0$ $\simeq$ 142.58 K for CE, $\simeq$ 97 K for HCE and characteristic time constant $τ_0$ $\simeq$ $8.85\times10^{-9}$ s for CE, $\simeq$ $3.8\times10^{-10}$ s for HCE; along with $δ$T$_{Th}$ $\sim$ 0.1 for CE and 0.2 for HCE. The power law fitting with dynamic exponent $zv'$ = 6.2 $\pm$ 1.1 for CE, 6.3 $\pm$ 0.5 for HCE and single spin flip $τ^*$ $\simeq$ $7.7\times10^{-11}$ s for CE, $\simeq$ $1.3\times10^{-10}$ s for HCE provide firm confirmation of cluster spin-glass phase. The progressive spin freezing across multiple metastable states with prominent memory effects is reflected in both the systems via nonequilibrium dynamics study. The hollow core geometry with anisotropic nanoparticles on surface with closer proximity leads to complex anisotropy energy landscape with enhanced demagnetizing field resulting highly frustrated surface spins. As a consequence, more prominent magnetic memory effect is observed in HCE with higher activation energy, reduced blocking temperature and enhanced coercivity than that of CE.
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Submitted 16 March, 2020; v1 submitted 25 July, 2019;
originally announced July 2019.
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Proximity effects in Graphene and Ferromagnetic CrBr3 van der Waals Heterostructure
Authors:
Sushant Kumar Behera,
Mayuri Bora,
Sapta Sindhu Paul Chowdhury,
Pritam Deb
Abstract:
We report on first-principle calculations on magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer induced by its interaction with a two-dimensional (2D) ferromagnet (chromium tribromide, CrBr3). We observe that the magnetic proximity effect arising from the spin-dependent interlayer coupling depends sensitively on the interlayer electronic configuration. The…
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We report on first-principle calculations on magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer induced by its interaction with a two-dimensional (2D) ferromagnet (chromium tribromide, CrBr3). We observe that the magnetic proximity effect arising from the spin-dependent interlayer coupling depends sensitively on the interlayer electronic configuration. The proximity effect results in spin polarization of graphene orbital by up to 63.6 %, together with a miniband splitting band gap of about 73.4 meV and 8% enhancement in magnetic moment (3.47$μ$B/cell) in heterostructure. The position of the Fermi level in the Dirac cone is shown to depend strongly on the graphene-CrBr3 interlayer separation of 3.77 Angstrom. Consequently, we also show that a perpendicular electric field can be used to control the miniband spin splitting and transmission spectrum. Also, the interfacial polarization effect due to the existence of two different constituents reinforces the conductivity via electrostatic screening in the heterolayer. These findings point toward potential nanoscale devices where the electric field driven magnetic proximity effect can lead to unique spin controllability and possible engineering of spin gating.
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Submitted 24 September, 2019; v1 submitted 1 July, 2019;
originally announced July 2019.
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Electronic structure and Magneto-transport in MoS$_2$/Phosphorene van der Waals heterostructure
Authors:
Sushant Kumar Behera,
Pritam Deb
Abstract:
The time-dependent spin current mediated spin transfer torque behaviour has been investigated via scattering formalism within density functional theory framework supported by Green's function. Quantum magnetotransport characteristics have been revealed in a model semiconducting MoS$_2$/phosphorene van der Waals heterostructure. The dynamics of spin current channelized heterolayer transport has bee…
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The time-dependent spin current mediated spin transfer torque behaviour has been investigated via scattering formalism within density functional theory framework supported by Green's function. Quantum magnetotransport characteristics have been revealed in a model semiconducting MoS$_2$/phosphorene van der Waals heterostructure. The dynamics of spin current channelized heterolayer transport has been studied with rotational variation in magnetization angle. It is observed that the time-dependent spin transport torque remains invariant irrespective of magnetization angle direction. The polarized spin-current is persistent with the external magnetic field for potential applicability towards spintronics.
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Submitted 17 June, 2019;
originally announced June 2019.
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Two Dimensional heterostructure and its application in efficient quantum energy storage
Authors:
Meenakshi Talukdar,
Sushant Kumar Behera,
Pritam Deb
Abstract:
Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D graphitic nanomaterials with high conductivity and surface area signify high performance of micro-supercapacitor. In order to satisfy the fast-growing energy demands f…
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Portable miniaturized energy storage micro-supercapacitor has engrossed significant attention due to its power source and energy storage capacity, replacing batteries in ultra-small electronic devices. Fabrication with porous and 2D graphitic nanomaterials with high conductivity and surface area signify high performance of micro-supercapacitor. In order to satisfy the fast-growing energy demands for the next-generation, we report performance and design of a 2D heterostructure of EDLC (g-C$_3$N$_4$) & pseudocapacitive (FeNi$_3$) resulting low ionic diffusion path and prominent charge storage based on their synergic functionalities. This heterostructure system shows an enhanced quantum capacitance (38% enhancement) due to delocalized states near Fermi level. Having achieved the areal capacitance of 19.21 mFcm$^{-2}$, capacitive retention (94%), enhanced power density (17 fold) having ultrahigh energy density of 0.30 Wh.cm$^{-3}$ and stability of the material even without any obvious degradation after 1000 cycles, this smart heterostructure acts as a new platform for designing high-performance in-plane micro-supercapacitor.
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Submitted 7 May, 2019; v1 submitted 1 May, 2019;
originally announced May 2019.
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Dynamic patterning and texture evolution of microbubbles in non-Newtonian immobile droplet
Authors:
Mayuri Bora,
Sushant K. Behera,
Pritam Deb
Abstract:
The dynamical perspectives of bubble in a liquid droplet on smooth solid substrate can be revealed by investigating interfacial self-assembly phenomena. Moreover, the complexity in such system can be scaled down into a transparent immobile non-Newtonian droplet. Here we present the dynamical approaches of internal microbubbles through coalescence and implosion near the edge of the droplet. The agg…
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The dynamical perspectives of bubble in a liquid droplet on smooth solid substrate can be revealed by investigating interfacial self-assembly phenomena. Moreover, the complexity in such system can be scaled down into a transparent immobile non-Newtonian droplet. Here we present the dynamical approaches of internal microbubbles through coalescence and implosion near the edge of the droplet. The aggregation density of microbubbles near the rim is greater than the central region corresponding to the dynamical behaviour of the droplet marked with capillary flow along the triple phase contact line. We have also numerically analysed the occurrence of aggregation density of internal microbubbles near the edge by implementing boundary integral method. Our numerical results show good agreement with the experimental findings until the aggregation density have occurred near the edge of the droplet. This understanding ascribes distinctive skew exponential power law characteristics through coalescence and implosion.
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Submitted 16 November, 2018;
originally announced November 2018.
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Renormalization group analysis of weakly interacting van der Waals Fermi system
Authors:
Sushant Kumar Behera,
Madhavi Ahalawat,
Subrata Jana,
Prasanjit Samal,
Pritam Deb
Abstract:
Weak-coupling phenomena of the two-dimensional Hubbard model is gaining momentum as a new interesting research field due to its extraordinarily rich behavior as a function of the carrier density and model parameters. Salmhofer [{\it Commun. Math. Phys}. \textbf{194}, 249 (1998);{\it Phys. Rev. Lett}. {\bf 87}, 187004 (2001)] developed a new renormalization-group method for interacting Fermi system…
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Weak-coupling phenomena of the two-dimensional Hubbard model is gaining momentum as a new interesting research field due to its extraordinarily rich behavior as a function of the carrier density and model parameters. Salmhofer [{\it Commun. Math. Phys}. \textbf{194}, 249 (1998);{\it Phys. Rev. Lett}. {\bf 87}, 187004 (2001)] developed a new renormalization-group method for interacting Fermi systems and Metzner [{\it Phys. Rev. B} {\bf 61}, 7364 (2000);{\it Phys. Rev. Lett}. {\bf 85}, 5162 (2000)] implemented this renormalization group analysis of the two-dimensional Hubbard model. In this work, we demonstrate the spin-wave dependent susceptibility behavior of model graphene-phosphorene van der Waals heterostructure in the framework of renormalization group approach. We implement signlet vertex response function for the weakly interacting van der Waals Fermi system with nearest-neighbor hop** amplitudes. This analytical approach is further correlated with {\it ab initio} simulation results and extended for spin-wave dependent susceptibility behavior with possible experimental protocols. We present the resulting compressibility and phase diagram in the vicinity of half-filling, and also results for the density dependence of the critical energy scale.
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Submitted 9 June, 2021; v1 submitted 9 August, 2018;
originally announced August 2018.
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PAW mediated ab initio simulations on linear response phonon dynamics of anisotropic black phosphorous monolayer for thermoelectric applications
Authors:
Sushant Kumar Behera,
Pritam Deb
Abstract:
The first order standard perturbation theory combined with ab initio projector augmented wave operator challenges the realization of the standard Sternheimer equation with linear computational efficiency. This efficiency motivates us to describe the electron-phonon interaction in two-dimensional (2D) black phosphorous monolayer using generalized density functional perturbation theory (DFPT) with B…
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The first order standard perturbation theory combined with ab initio projector augmented wave operator challenges the realization of the standard Sternheimer equation with linear computational efficiency. This efficiency motivates us to describe the electron-phonon interaction in two-dimensional (2D) black phosphorous monolayer using generalized density functional perturbation theory (DFPT) with Boltzmann transport theory (BTE). Subsequently, linear response phonon dynamic behaviour in terms of conductivities, seebeck coefficients and transport properties are focused for its thermoelectric application. The analysis reveals the crystal orientation dependence via structural anisotropy and the density of states of the monolayer structure. Momentum dependent phonon population dynamics along with the phonon linewidth are efficient in terms of reciprocal space electronic states. The optimized values of thermal conductivities of electrons and Seebeck coefficients act as driving force to modulate thermoelectric effects. Figure of merit is calculated to be 0.074 at 300 K and 0.152 at 500 K of the MLBP system as a function of the power factor. The value of lattice thermal conductivity is 37.15 W/mK at room temperature and follows the inverse dependency with temperature. With the anticipated superior performance, profound thermoelectric applications can be achieved particularly in the monolayer black phosphorous system.
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Submitted 4 October, 2018; v1 submitted 5 July, 2018;
originally announced July 2018.
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Non collinear Magnetism and Phonon Dispersion Relation in Vacancy Induced Phosphorene Monolayer
Authors:
Sushant Kumar Behera,
Pritam Deb
Abstract:
We have studied the electronic, magnetic and linear phonon dispersion behavior of Phosphorene monolayer using rst principle based ab initio method. Phosphorene monolayer is a semiconducting system with a dimensional dependent variable range of band gap. Vacancy has been done to study the geometry and physical behavior of the monolayer system. Pristine, vacancy induced monolayer and vacancy induced…
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We have studied the electronic, magnetic and linear phonon dispersion behavior of Phosphorene monolayer using rst principle based ab initio method. Phosphorene monolayer is a semiconducting system with a dimensional dependent variable range of band gap. Vacancy has been done to study the geometry and physical behavior of the monolayer system. Pristine, vacancy induced monolayer and vacancy induced doped monolayer are included in the calculation. Dopant concentration has been well checked via optimization algorithm to maintain the dilute magnetic semiconducting behavior of the monolayer system. Density of states and partial density of state indicates the contribution of individual orbitals in the system. Band closing nature in observed in vacancy and doped vacancy states indicating closed dense states and metallic behavior of the perturbed phases. Both antiferromagnetic and ferromagnetic ordering is included in our calculation to get a charm of both ordering in the physical properties of the system. Landau energy level distribution is mapped via Fermi surface with linear dispersion relation in terms of phonon vibrational density of states and linear dispersion relations. The results of linear phonon density of states corroborating with electronic density of states.
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Submitted 28 June, 2018;
originally announced June 2018.
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Deep sub-Ångstrom imaging of 2D materials with a high dynamic range detector
Authors:
Yi Jiang,
Zhen Chen,
Yimo Han,
Pratiti Deb,
Hui Gao,
Saien Xie,
Prafull Purohit,
Mark W. Tate,
Jiwoong Park,
Sol M. Gruner,
Veit Elser,
David A. Muller
Abstract:
Aberration-corrected optics have made electron microscopy at atomic-resolution a widespread and often essential tool for nanocharacterization. Image resolution is dominated by beam energy and the numerical aperture of the lens (α), with state-of-the-art reaching ~0.47 Å at 300 keV. Two-dimensional materials are imaged at lower beam energies to avoid knock-on damage, limiting spatial resolution to…
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Aberration-corrected optics have made electron microscopy at atomic-resolution a widespread and often essential tool for nanocharacterization. Image resolution is dominated by beam energy and the numerical aperture of the lens (α), with state-of-the-art reaching ~0.47 Å at 300 keV. Two-dimensional materials are imaged at lower beam energies to avoid knock-on damage, limiting spatial resolution to ~1 Å. Here, by combining a new electron microscope pixel array detector with the dynamic range to record the complete distribution of transmitted electrons and full-field ptychography to recover phase information from the full phase space, we increased the spatial resolution well beyond the traditional lens limitations. At 80 keV beam energy, our ptychographic reconstructions significantly improved image contrast of single-atom defects in MoS2, reaching an information limit close to 5α, corresponding to a 0.39 Å Abbe resolution, at the same dose and imaging conditions where conventional imaging modes reach only 0.98 Å.
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Submitted 14 January, 2018;
originally announced January 2018.
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Cathodoluminescence as an Effective Probe of Carrier Transport and Deep Level Defects in Droop-Mitigating InGaN/GaN Quantum Well Heterostructures
Authors:
Zhibo Zhao,
Akshay Singh,
Jordan Chesin,
Rob Armitage,
Isaac Wildeson,
Parijat Deb,
Andrew Armstrong,
Kim Kisslinger,
Eric A. Stach,
Silvija Gradečak
Abstract:
Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within the multi-quantum well active region. However, these modifications are often accompanied by a corresponding degradation in material quality that decr…
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Commercial InGaN/GaN light emitting diode heterostructures continue to suffer from efficiency droop at high current densities. Droop mitigation strategies target Auger recombination and typically require structural and/or compositional changes within the multi-quantum well active region. However, these modifications are often accompanied by a corresponding degradation in material quality that decreases the expected gains in high-current external quantum efficiency. We study origins of these efficiency losses by correlating chip-level quantum efficiency measurements with structural and optical properties obtained using a combination of electron microscopy tools. The drop in quantum efficiency is not found to be correlated with quantum well (QW) width fluctuations. Rather, we show direct correlation between active region design, deep level defects, and delayed electron beam induced cathodoluminescence (CL) with characteristic rise time constants on the order of tens of seconds. We propose a model in which the electron beam fills deep level defect states and simultaneously drives reduction of the built-in field within the multi-quantum well active region, resulting in a delay in accumulation of carrier populations within the QWs. The CL measurements yield fundamental insights into carrier transport phenomena, efficiency-reducing defects, and quantum well band structure that are important in guiding future heterostructure process development.
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Submitted 3 October, 2017;
originally announced October 2017.
