Showing 1–18 of 18 results for author: De Boeck, J

Magnetoelectric Coupling in Pb(Zr,Ti)O3/CoFeB Nanoscale Waveguides Studied by Propagating Spin-Wave Spectroscopy

Authors: Daniele Narducci, Xiangyu Wu, Isabella Boventer, Jo De Boeck, Abdelmadjid Anane, Paolo Bortolotti, Christoph Adelmann, Florin Ciubotaru

Abstract: This study introduces a method for the characterization of the magnetoelectric coupling in nanoscale Pb(Zr,Ti)O3/CoFeB thin film composites based on propagating spin-wave spectroscopy. Finite element simulations of the strain distribution in the devices indicated that the magnetoelastic effective field in the CoFeB waveguides was maximized in the Damon - Eshbach configuration. All-electrical broad… ▽ More This study introduces a method for the characterization of the magnetoelectric coupling in nanoscale Pb(Zr,Ti)O3/CoFeB thin film composites based on propagating spin-wave spectroscopy. Finite element simulations of the strain distribution in the devices indicated that the magnetoelastic effective field in the CoFeB waveguides was maximized in the Damon - Eshbach configuration. All-electrical broadband propagating spin-wave transmission measurements were conducted on Pb(Zr,Ti)O3/CoFeB magnetoelectric waveguides with lateral dimensions down to 700 nm. The results demonstrated that the spin-wave resonance frequency can be modulated by applying a bias voltage to Pb(Zr,Ti)O3. The modulation is hysteretic due to the ferroelastic behavior of Pb(Zr,Ti)O3. An analytical model was then used to correlate the change in resonance frequency to the induced magnetoelastic field in the magnetostrictive CoFeB waveguide. We observe a hysteresis magnetoelastic field strength with values as large as 5.61 mT, and a non-linear magnetoelectric coupling coefficient with a maximum value of 1.69 mT/V. △ Less

Submitted 10 December, 2023; originally announced December 2023.

Comments: This project has received funding from the European Union's Horizon Europe research and innovation programme under grant agreement No 101070536 - project MandMEMS

Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

Authors: Vaishnavi Kateel, Viola Krizakova, Siddharth Rao, Kaiming Cai, Mohit Gupta, Maxwel Gama Monteiro, Farrukh Yasin, Bart Sorée, Johan De Boeck, Sebastien Couet, Pietro Gambardella, Gouri Sankar Kar, Kevin Garello

Abstract: Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications.… ▽ More Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by sha** the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for develo** purely current-driven SOT systems. △ Less

Submitted 6 May, 2023; originally announced May 2023.

Seed Layer Impact on Structural and Magnetic Properties of [Co/Ni] Multilayers with Perpendicular Magnetic Anisotropy

Authors: Enlong Liu, J. Swerts, T. Devolder, S. Couet, S. Mertens, T. Lin, V. Spampinato, A. Franquet, T. Conard, S. Van Elshocht, A. Furnemont, J. De Boeck, G. Kar

Abstract: [Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (\textit{fcc}) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line (BEOL) processes also requires the PMA to survive post-annealing. In this pape… ▽ More [Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (\textit{fcc}) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line (BEOL) processes also requires the PMA to survive post-annealing. In this paper, the impact of NiCr, Pt, Ru, and Ta seed layers on the structural and magnetic properties of [Co(0.3 nm)/Ni(0.6 nm)] multilayers is investigated before and after annealing. The multilayers were deposited \textit{in-situ} on different seeds via physical vapor deposition at room temperature. The as-deposited [Co/Ni] films show the required \textit{fcc}(111) texture on all seeds, but PMA is only observed on Pt and Ru. In-plane magnetic anisotropy (IMA) is obtained on NiCr and Ta seeds, which is attributed to strain-induced PMA loss. PMA is maintained on all seeds after post-annealing up to 400$^{\circ}$C. The largest effective perpendicular anisotropy energy ($K_U^{\mathrm{eff}}\approx 2\times10^5$J/m$^3$) after annealing is achieved on NiCr seed. The evolution of PMA upon annealing cannot be explained by further crystallization during annealing or strain-induced PMA, nor can the observed magnetization loss and the increased dam** after annealing. Here we identify the diffusion of the non-magnetic materials from the seed into [Co/Ni] as the major driver of the changes in the magnetic properties. By selecting the seed and post-annealing temperature, the [Co/Ni] can be tuned in a broad range for both PMA and dam**. △ Less

Submitted 26 January, 2017; originally announced January 2017.

Comments: 9 pages, 11 figures

Journal ref: Journal of Applied Physics 121, 043905 (2017)

Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy

Authors: T. Devolder, E. Liu, J. Swerts, S. Couet, T. Lin, S. Mertens, A. Furnemont, G. Kar, J. De Boeck

Abstract: We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W, Mo) to a very anisotropic [Co/Ni] multilayer embodied in a magnetic tunnel junction meant for spin torque memory applications. For this we use broadband ferromagnetic resonance to follow the field dependence of the aco… ▽ More We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W, Mo) to a very anisotropic [Co/Ni] multilayer embodied in a magnetic tunnel junction meant for spin torque memory applications. For this we use broadband ferromagnetic resonance to follow the field dependence of the acoustical and optical excitation of the composite free layer in both in-plane and out-of-plane applied fields. The modeling provides the interlayer exchange coupling, the anisotropies and the dam** factors. The popular Ta spacer are outperformed by W and even more by Mo, which combines the strongest interlayer exchange coupling without sacrificing anisotropies, dam** factors and transport properties. △ Less

Submitted 26 September, 2016; originally announced September 2016.

Comments: To appear the Applied Physics Letters, 2016

Skyrmion-induced bound states on the surface of 3D Topological Insulators

Authors: Dimitrios Andrikopoulos, Bart Sorée, Jo De Boeck

Abstract: The interaction between the surface of a 3D topological insulator and a skyrmion / anti-skyrmion structure is studied in order to investigate the possibility of electron confinement due to skyrmion presence. Both hedgehog (Néel) and vortex (Bloch) skyrmions are considered. For the hedgehog skyrmion the in-plane components cannot be disregarded and their interaction with the surface state of the TI… ▽ More The interaction between the surface of a 3D topological insulator and a skyrmion / anti-skyrmion structure is studied in order to investigate the possibility of electron confinement due to skyrmion presence. Both hedgehog (Néel) and vortex (Bloch) skyrmions are considered. For the hedgehog skyrmion the in-plane components cannot be disregarded and their interaction with the surface state of the TI has to be taken into account. A semi-classical description of the skyrmion chiral angle is obtained using the variational principle. It is shown that both the hedgehog and the vortex skyrmion can induce bound states on the surface of the TI. However, the number and the properties of these states depend strongly on the skyrmion type and on the skyrmion topological number $N_{Sk}$. The probability densities of the bound electrons are also derived where it is shown that they are localized within the skyrmion region. △ Less

Submitted 12 March, 2016; v1 submitted 13 November, 2015; originally announced November 2015.

Zero-bias spin separation

Authors: Sergey D. Ganichev, Vasily V. Bel'kov, Sergey A. Tarasenko, Sergey N. Danilov, Stephan Giglberger, Christoph Hoffmann, Eougenious L. Ivchenko, Dieter Weiss, Werner Wegscheider, Christian Gerl, Dieter Schuh, Joachim Stahl, Joan De Boeck, Gustaaf Borghs, Wilhelm Prettl

Abstract: Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric… ▽ More Spin-orbit coupling provides a versatile tool to generate and to manipulate the spin degree of freedom in low-dimensional semiconductor structures. The spin Hall effect, where an electrical current drives a transverse spin current and causes a nonequilibrium spin accumulation observed near the sample boundary, the spin-galvanic effect, where a nonequilibrium spin polarization drives an electric current, or the reverse process, in which an electrical current generates a nonequilibrium spin polarization, are all consequences of spin-orbit coupling. In order to observe a spin Hall effect a bias driven current is an essential prerequisite. The spin separation is caused via spin-orbit coupling either by Mott scattering (extrinsic spin Hall effect) or by Rashba or Dresselhaus spin splitting of the band structure (intrinsic spin Hall effect). Here we provide evidence for an elementary effect causing spin separation which is fundamentally different from that of the spin Hall effect. In contrast to the spin Hall effect it does not require an electric current to flow: It is spin separation achieved by spin-dependent scattering of electrons in media with suitable symmetry. We show that by free carrier (Drude) absorption of terahertz radiation spin separation is achieved in a wide range of temperatures from liquid helium up to room temperature. Moreover the experimental results give evidence that simple electron gas heating by any means is already sufficient to yield spin separation due to spin-dependent energy relaxation processes of nonequilibrium carriers. △ Less

Submitted 24 May, 2006; v1 submitted 23 May, 2006; originally announced May 2006.

Comments: 19 pages, 4 figures, 1 table

Spatial structure of Mn-Mn acceptor pairs in GaAs

Authors: A. M. Yakunin, A. Yu. Silov, P. M. Koenraad, J. -M. Tang, M. E. Flatté, W. Van Roy, J. De Boeck, J. H. Wolter

Abstract: The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acce… ▽ More The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high do** levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $δ$-doped layers grown on differently oriented substrates. △ Less

Submitted 24 May, 2005; v1 submitted 23 May, 2005; originally announced May 2005.

Comments: 4 pages, 4 figures

Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

Authors: P. Van Dorpe, W. Van Roy, J. De Boeck, G. Borghs, P. Sankowski, P. Kacman, J. A. Majewski, T. Dietl

Abstract: The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Butt… ▽ More The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization. △ Less

Submitted 25 February, 2005; originally announced February 2005.

Comments: Submitted to Phys. Rev. B Rapid Communications

Quantitative Study of Magnetotransport through a (Ga,Mn)As Single Ferromagnetic Domain

Authors: S. T. B. Goennenwein, S. Russo, A. F. Morpurgo, T. M. Klapwijk, W. van Roy, J. de Boeck

Abstract: We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitat… ▽ More We have performed a systematic investigation of the longitudinal and transverse magnetoresistance of a single ferromagnetic domain in (Ga,Mn)As. We find that, by taking into account the intrinsic dependence of the resistivity on the magnetic induction, an excellent agreement between experimental results and theoretical expectations is obtained. Our findings provide a detailed and fully quantitative validation of the theoretical description of magnetotransport through a single ferromagnetic domain. Our analysis furthermore indicates the relevance of magneto-impurity scattering as a mechanism for magnetoresistance in (Ga,Mn)As. △ Less

Submitted 27 December, 2004; v1 submitted 13 December, 2004; originally announced December 2004.

Comments: 5 pages, 4 figures; v2: missing references included, figures recompressed to improve readability

Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

Authors: A. M. Yakunin, A. Yu. Silov, P. M. Koenraad, J. H. Wolter, W. Van Roy, J. De Boeck

Abstract: An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of t… ▽ More An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state. △ Less

Submitted 6 June, 2004; originally announced June 2004.

Comments: Proceedings of the SIMD-4 conference. Hawaii, USA (December 1-5, 2003)

Journal ref: Superlattices and Microstructures 34, 539-545 (2003)

Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states

Authors: J. Eroms, D. Weiss, J. De Boeck, G. Borghs, U. Zülicke

Abstract: We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we f… ▽ More We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we find that above a geometry-dependent magnetic field value the sample in the superconducting state has a higher longitudinal resistance than in the normal state. Both observations can be explained with edge channels populated with electrons and Andreev reflected holes. △ Less

Submitted 20 July, 2005; v1 submitted 14 April, 2004; originally announced April 2004.

Comments: accepted for Phys Rev Lett, some changes to text

Journal ref: Phys. Rev. Lett. 95, 107001 (2005)

Spatial structure of an individual Mn acceptor in GaAs

Authors: A. M. Yakunin, A. Yu. Silov, P. M. Koenraad, J. H. Wolter, W. Van Roy, J. De Boeck, J. -M. Tang, M. E. Flatte

Abstract: The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs c… ▽ More The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic. △ Less

Submitted 1 February, 2004; originally announced February 2004.

Comments: 3 figures, submitted to PRL

Journal ref: Phys. Rev. Lett. 92, 216806 (2004)

Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy

Authors: A. M. Yakunin, A. Yu. Silov, P. M. Koenraad, W. Van Roy, J. De Boeck, J. H. Wolter

Abstract: We present results on the direct spatial map** of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feat… ▽ More We present results on the direct spatial map** of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feature. We attribute this feature to a hole weakly bound to the Mn ion forming the [Mn2+(3d5) + hole] complex. △ Less

Submitted 12 August, 2003; originally announced August 2003.

Comments: 4 pages, 7 figures

Journal ref: Physica E 21(2-4) 947-950 (2004)

Spatially resolved ultrafast precessional magnetization reversal

Authors: W. K. Hiebert, L. Lagae, J. De Boeck

Abstract: Spatially resolved measurements of quasi-ballistic precessional magnetic switching in a microstructure are presented. Crossing current wires allow detailed study of the precessional switching induced by coincident longitudinal and transverse magnetic field pulses. Though the response is initially spatially uniform, dephasing occurs leading to nonuniformity and transient demagnetization. This non… ▽ More Spatially resolved measurements of quasi-ballistic precessional magnetic switching in a microstructure are presented. Crossing current wires allow detailed study of the precessional switching induced by coincident longitudinal and transverse magnetic field pulses. Though the response is initially spatially uniform, dephasing occurs leading to nonuniformity and transient demagnetization. This nonuniformity comes in spite of a novel method for suppression of end domains in remanence. The results have implications for the reliability of ballistic precessional switching in magnetic devices. △ Less

Submitted 5 December, 2002; originally announced December 2002.

Comments: 17 pages (including 4 figures), submitted to Phys. Rev. Lett

Journal ref: Phys. Rev. B 68, 020402(R), 2003

Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

Authors: P. Van Dorpe, V. F. Motsnyi, M. Nijboer, E. Goovaerts, V. I. Safarov, J. Das, W. Van Roy, G. Borghs, J. De Boeck

Abstract: We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polariza… ▽ More We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature. △ Less

Submitted 25 June, 2003; v1 submitted 16 August, 2002; originally announced August 2002.

Journal ref: Jpn. J. Appl. Phys. Vol.42 No.5B pp.L502 - L504 (2003)

Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

Authors: V. F. Motsnyi, V. I. Safarov, J. De Boeck, J. Das, W. Van Roy, E. Goovaerts, G. Borghs

Abstract: We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in ex… ▽ More We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K. △ Less

Submitted 11 October, 2001; originally announced October 2001.

Comments: 5 pages, 4 figures

Journal ref: APL 81, 265 (2002)

Commensurability effects in Andreev antidot billiards

Authors: J. Eroms, M. Tolkiehn, D. Weiss, U. Rössler, J. De Boeck, G. Borghs

Abstract: An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering t… ▽ More An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering the trajectories of charge carriers in the semiconductor, when Andreev reflection at the semiconductor-superconductor interface is included. For perfect Andreev reflection, we expect a complete suppression of the commensurability features, even though motion at finite B is chaotic. △ Less

Submitted 9 July, 2001; originally announced July 2001.

Comments: 4 pages, 4 figures

Journal ref: Europhys. Letters 58, 569 (2002)

Skip** orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices

Authors: J. Eroms, M. Zitzlsperger, D. Weiss, J. H. Smet, C. Albrecht, R. Fleischmann, M. Behet, J. De Boeck, G. Borghs

Abstract: We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo form… ▽ More We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo formula and an analysis of the Poincare surface of section at different magnetic field values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum. △ Less

Submitted 27 July, 1998; originally announced July 1998.

Comments: 4 pages, 4 Postscript figures, REVTeX, submitted to Phys Rev B