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Cyclically Symmetric Thomas Oscillators As Swarmalators : A paradigm for Active Fluids & Pattern Formation
Authors:
Vinesh Vijayan,
Pranaya Pratik Das
Abstract:
In this letter, we demonstrate the cyclically symmetric Thomas oscillators as swarmalators and describe their possible collective dynamics. We achieve this by sewing Kuromoto-type phase dynamics to particle dynamics represented by the Thomas model. More precisely, this is equivalent to a non-linear particle aggregation model with cyclic symmetry of coordinates and position-dependent phase dynamics…
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In this letter, we demonstrate the cyclically symmetric Thomas oscillators as swarmalators and describe their possible collective dynamics. We achieve this by sewing Kuromoto-type phase dynamics to particle dynamics represented by the Thomas model. More precisely, this is equivalent to a non-linear particle aggregation model with cyclic symmetry of coordinates and position-dependent phase dynamics. The non-linear equations describe spatiotemporal patterns of crystalline order and chaotic randomness at two extreme values of the system parameter. This pattern is the outcome of non-linear self-organization, which leads to a new class of turbulent flow - active turbulence. We claim that this model can capture the dynamics of many naturally occurring microorganisms and micro-swimmers. The model described in this letter can be a prototypical model for understanding active systems and may shed light on the possibility of making novel materials(active matter) with exciting biomedical and industrial applications. The key to this is the understanding and control over the complex dynamics of active systems, an out-of-equilibrium system, which is potentially helpful in making functional materials, nano and micromachines.
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Submitted 17 November, 2022; v1 submitted 1 November, 2022;
originally announced November 2022.
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Dynamics of a Charged Thomas Oscillator in an External Magnetic Field
Authors:
Vinesh Vijayan,
Pranaya Pratik Das
Abstract:
In this letter, we provide a detailed numerical examination of the dynamics of a charged Thomas oscillator in an external magnetic field. We do so by adopting and then modifying the cyclically symmetric Thomas oscillator to study the dynamics of a charged particle in an external magnetic field. These dynamical behaviours for weak and strong field strength parameters fall under two categories; cons…
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In this letter, we provide a detailed numerical examination of the dynamics of a charged Thomas oscillator in an external magnetic field. We do so by adopting and then modifying the cyclically symmetric Thomas oscillator to study the dynamics of a charged particle in an external magnetic field. These dynamical behaviours for weak and strong field strength parameters fall under two categories; conservative and dissipative. The system shows a complex quasi-periodic attractor whose topology depends on initial conditions for high field strengths in the conservative regime. There is a transition from adiabatic motion to chaos on decreasing the field strength parameter. In the dissipative regime, the system is chaotic for weak field strength and weak dam** but shows a limit cycle for high field strengths. Such behaviour is due to an additional negative feedback loop that comes into action at high field strengths and forces the system dynamics to be stable in periodic oscillations. For weak dam** and weak field strength, the system dynamics mimic Brownian motion via chaotic walks.
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Submitted 30 April, 2022; v1 submitted 22 January, 2022;
originally announced February 2022.
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Map** Structural Heterogeneity at the Nanoscale with Scanning Nano-structure Electron Microscopy (SNEM)
Authors:
Yevgeny Rakita,
James L. Hart,
Partha Pratim Das,
Daniel L. Foley,
Stavros Nicolopoulos,
Sina Shahrezaei,
Suveen Nigel Mathaudhu,
Mitra L. Taheri,
Simon J. L. Billinge
Abstract:
Here we explore the use of scanning electron diffraction coupled with electron atomic pair distribution function analysis (ePDF) to understand the local order as a function of position in a complex multicomponent system, a hot rolled, Ni-encapsulated, Zr$_{65}$Cu$_{17.5}$Ni$_{10}$Al$_{7.5}$ bulk metallic glass (BMG), with a spatial resolution of 3 nm. We show that it is possible to gain insight in…
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Here we explore the use of scanning electron diffraction coupled with electron atomic pair distribution function analysis (ePDF) to understand the local order as a function of position in a complex multicomponent system, a hot rolled, Ni-encapsulated, Zr$_{65}$Cu$_{17.5}$Ni$_{10}$Al$_{7.5}$ bulk metallic glass (BMG), with a spatial resolution of 3 nm. We show that it is possible to gain insight into the chemistry and chemical clustering/ordering tendency in different regions of the sample, including in the vicinity of nano-scale crystallites that are identified from virtual dark field images and in heavily deformed regions at the edge of the BMG. In addition to simpler analysis, unsupervised machine learning was used to extract partial PDFs from the material, modeled as a quasi-binary alloy, and map them in space. These maps allowed key insights not only into the local average composition, as validated by EELS, but also a unique insight into chemical short-range ordering tendencies in different regions of the sample during formation. The experiments are straightforward and rapid and, unlike spectroscopic measurements, don't require energy filters on the instrument. We spatially map different quantities of interest (QoI's), defined as scalars that can be computed directly from positions and widths of ePDF peaks or parameters refined from fits to the patterns. We developed a flexible and rapid data reduction and analysis software framework that allows experimenters to rapidly explore images of the sample on the basis of different QoI's. The power and flexibility of this approach are explored and described in detail. Because of the fact that we are getting spatially resolved images of the nanoscale structure obtained from ePDFs we call this approach scanning nano-structure electron microscopy (SNEM), and we believe that it will be powerful and useful extension of current 4D-STEM methods.
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Submitted 25 August, 2022; v1 submitted 7 October, 2021;
originally announced October 2021.
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Dependence of the 0.5(2e2/h) conductance plateau on the aspect ratio of InAs quantum point contacts with in-plane side gates
Authors:
P. P. Das,
A. Jones,
M. Cahay,
S. Kalita,
S. S. Mal,
N. S. Sterin,
T. R. Yadunath,
M. Advaitha,
S. T. Herbert
Abstract:
The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with the same width but longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the side gates over which the 0.5…
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The observation of a 0.5 conductance plateau in asymmetrically biased quantum point contacts with in-plane side gates has been attributed to the onset of spin-polarized current through these structures. For InAs quantum point contacts with the same width but longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the side gates over which the 0.5 conductance plateau is observed when the QPC aspect ratio (ratio of length over width of the narrow portion of the structure) is increased by a factor 3. Non-equilibrium Green s function simulations indicate that the increase in the size of the 0.5 conductance plateau is due to an increased importance, over a larger range of common sweep voltage, of the effects of electron-electron interactions in QPC devices with larger aspect ratio. The use of asymmetrically biased QPCs with in-plane side gates and large aspect ratio could therefore pave the way to build robust spin injectors and detectors for the successful implementation of spin field effect transistors
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Submitted 11 February, 2017;
originally announced February 2017.
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Spin Polarization in a AlGaAs/GaAs Quantum Point Contact with in-plane side gates
Authors:
N. Bhandari,
P. P. Das,
M. Cahay,
R. S. Newrock,
S. T. Herbert
Abstract:
We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a funct…
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We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a function of the potential asymmetry between the side gates. The observation of spontaneous spin polarization in a side-gated GaAs QPC could eventually lead to the realization of an all-electric spin-valve at tens of degrees Kelvin.
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Submitted 20 April, 2012;
originally announced April 2012.
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Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact
Authors:
P. P. Das,
K. B. Chetry,
N. Bhandari,
J. Wan,
M. Cahay,
R. S. Newrock,
S. T. Herbert
Abstract:
The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an inter…
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The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an intermediate range (around 3 V) of bias asymmetry. It is quite robust, being observed over a maximum range of nearly 1V of the sweep voltage common to the two in-plane gates. Our conductance measurements show evidence of surface roughness scattering from the side walls of the QPC. We show that a strong perpendicular magnetic field leads to magnetic confinement in the channel which reduces the importance of scattering from the side walls and favors the onset of near ballistic transport through the QPC.
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Submitted 13 July, 2011;
originally announced July 2011.
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Influence of Impurity Scattering on the Conductance Anomalies of Quantum Point Contacts with Lateral Spin-Orbit Coupling
Authors:
J. Wan,
M. Cahay,
P. P. Das,
R. S. Newrock
Abstract:
We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small…
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We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small model QPC2, three ingredients were found to be essential to generate the strong spin polarization: an asymmetric lateral confinement, a LSOC induced by the lateral confining potential of the QPC, and a strong electron-electron (e-e) interaction. In this paper, NEGF is used to study how the spin polarization is affected by the presence of impurities in the central portion of the QPC. It is found that the number, location, and shape of the conductance anomalies, occurring below the first quantized conductance plateau (G0=2e2/h), are strongly dependent on the nature (attractive or repulsive) and the locations of the impurities. We show that the maximum of the conductance spin polarization is affected by the presence of impurities. For QPCs with impurities off-center, a conductance anomaly appears below the first integer step even for the case of symmetric bias on the two side gates. These results are of practical importance if QPCs in series are to be used to fabricate all-electrical spin valves with large ON/OFF conductance ratio.
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Submitted 10 July, 2011;
originally announced July 2011.