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Emergent Moiré fringes in direct-grown quasicrystal
Authors:
**gwei Li,
Kejie Bao,
Honglin Sun,
Xingxu Yan,
Ting Huang,
Qicheng Zhang,
Yaoqiang Zhou,
Zhen**g Liu,
Paul Masih Das,
Jiawen You,
Jiong Zhao,
Jianbin Xu,
Xiaoqing Pan,
Yongli Mi,
Junyi Zhu,
Zhaoli Gao
Abstract:
Quasicrystals represent a category of rarely structured solids that challenge traditional periodicity in crystal materials. Recent advancements in the synthesis of two-dimensional (2D) van der Waals materials have paved the way for exploring the unique physical properties of these systems. Here, we report on the synthesis of 2D quasicrystals featuring 30° alternating twist angles between multiple…
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Quasicrystals represent a category of rarely structured solids that challenge traditional periodicity in crystal materials. Recent advancements in the synthesis of two-dimensional (2D) van der Waals materials have paved the way for exploring the unique physical properties of these systems. Here, we report on the synthesis of 2D quasicrystals featuring 30° alternating twist angles between multiple graphene layers, using chemical vapor deposition (CVD). Strikingly, we observed periodic Moiré patterns in the quasicrystal, a finding that has not been previously reported in traditional alloy-based quasicrystals. The Moiré periodicity, varying with the parity of the constituent layers, aligns with the theoretical predictions that suggest a stress cancellation mechanism in force. The emergence of Moiré fringes is attributed to the spontaneous mismatched lattice constant in the oriented graphene layers, proving the existence of atomic relaxation. This phenomenon, which has been largely understudied in graphene systems with large twist angles, has now been validated through our use of scanning transmission electron microscopy (STEM). Our CVD-grown Moiré quasicrystal provides an ideal platform for exploring the unusual physical properties that arise from Moiré periodicity within quasicrystals.
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Submitted 11 June, 2024;
originally announced June 2024.
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Electrically Tunable Magnetoconductance of Close-Packed CVD Bilayer Graphene Layer Stacking Walls
Authors:
Qicheng Zhang,
Sheng Wang,
Zhaoli Gao,
Sebastian Hurtado-Parra,
Joel Berry,
Zachariah Addison,
Paul Masih Das,
William M. Parkin,
Marija Drndic,
James M. Kikkawa,
Feng Wang,
Eugene J. Mele,
A. T. Charlie Johnson,
Zhengtang Luo
Abstract:
Quantum valley Hall (QVH) domain wall states are a new class of one-dimensional (1D) one-way conductors that are topologically protected in the absence of valley mixing. Development beyond a single QVH channel raises important new questions as to how QVH channels in close spatial proximity interact with each other, and how that interaction may be controlled. Scalable epitaxial bilayer graphene syn…
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Quantum valley Hall (QVH) domain wall states are a new class of one-dimensional (1D) one-way conductors that are topologically protected in the absence of valley mixing. Development beyond a single QVH channel raises important new questions as to how QVH channels in close spatial proximity interact with each other, and how that interaction may be controlled. Scalable epitaxial bilayer graphene synthesis produces layer stacking wall (LSW) bundles, where QVH channels are bound, providing an excellent platform to study QVH channel interactions. Here we show that distinct strain sources lead to the formation of both well-separated LSWs and close packed LSW bundles. Comparative studies of electronic transport in these two regimes reveal that close-packed LSW bundles support electrically tunable magnetoconductance. The coexistence of different strain sources offers a potential pathway to realize scalable quantum transport platform based on LSWs where electrically tunability enables programmable functionality.
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Submitted 10 June, 2024;
originally announced June 2024.
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Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing
Authors:
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
Thang Pham,
Anthony McFadden,
Nicholas Materise,
Paul Masih Das,
Matthew Cheng,
Dmitry Lebedev,
Stephanie M. Ribet,
Mitchell J. Walker,
David A. Garcia-Wetten,
Cameron J. Kopas,
Jayss Marshall,
Ella Lachman,
Nikolay Zhelev,
James A. Sauls,
Joshua Y. Mutus,
Corey Rae H. McRae,
Vinayak P. Dravid,
Michael J. Bedzyk,
Mark C. Hersam
Abstract:
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti…
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Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
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Submitted 5 April, 2024;
originally announced April 2024.
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Develo** a Chemical and Structural Understanding of the Surface Oxide in a Niobium Superconducting Qubit
Authors:
Akshay A. Murthy,
Paul Masih Das,
Stephanie M. Ribet,
Cameron Kopas,
Jaeyel Lee,
Matthew J. Reagor,
Lin Zhou,
Matthew J. Kramer,
Mark C. Hersam,
Mattia Checchin,
Anna Grassellino,
Roberto dos Reis,
Vinayak P. Dravid,
Alexander Romanenko
Abstract:
Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a…
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Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated remarkable improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a detailed assessment of the surface oxide that forms in ambient conditions for transmon test qubit devices patterned from a niobium film. We observe that this oxide exhibits a varying stoichiometry with NbO and NbO$_2$ found closer to the niobium film and Nb$_2$O$_5$ found closer to the surface. In terms of structural analysis, we find that the Nb$_2$O$_5$ region is semicrystalline in nature and exhibits randomly oriented grains on the order of 1-2 nm corresponding to monoclinic N-Nb$_2$O$_5$ that are dispersed throughout an amorphous matrix. Using fluctuation electron microscopy, we are able to map the relative crystallinity in the Nb$_2$O$_5$ region with nanometer spatial resolution. Through this correlative method, we observe that amorphous regions are more likely to contain oxygen vacancies and exhibit weaker bonds between the niobium and oxygen atoms. Based on these findings, we expect that oxygen vacancies likely serve as a decoherence mechanism in quantum systems.
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Submitted 28 July, 2022; v1 submitted 16 March, 2022;
originally announced March 2022.
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Controlled Growth of Large-Area Bilayer Tungsten Diselenides with Lateral P-N Junctions
Authors:
Srinivas V. Mandyam,
Meng Qiang Zhao,
Paul Masih Das,
Qicheng Zhang,
Christopher C. Price,
Zhaoli Gao,
Vivek B. Shenoy,
Marija Drndic,
Alan T. Charlie Johnson
Abstract:
Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-cont…
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Bilayer two-dimensional (2D) van der Waals (vdW) materials are attracting increasing attention due to their predicted high quality electronic and optical properties. Here we demonstrate dense, selective growth of WSe2 bilayer flakes by chemical vapor deposition with the use of a 1:10 molar mixture of sodium cholate and sodium chloride as the growth promoter to control the local diffusion of W-containing species. A large fraction of the bilayer WSe2 flakes showed a 0 and 60o twist between the two layers, while moire 15 and 30o-twist angles were also observed. Well-defined monolayer-bilayer junctions were formed in the as-grown bilayer WSe2 flakes, and these interfaces exhibited p-n diode rectification and an ambipolar transport characteristic. This work provides an efficient method for the layer-controlled growth of 2D materials, in particular, 2D transition metal dichalcogenides and promotes their applications in next-generation electronic and optoelectronic devices.
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Submitted 23 August, 2019;
originally announced August 2019.
