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Encapsulated void resonators in lossy dielectric van der Waals heterostructures
Authors:
Avishek Sarbajna,
Dorte Rubæk Danielsen,
Laura Nevenka Casses,
Nicolas Stenger,
Peter Bøggild,
Søren Raza
Abstract:
Dielectric optical resonators traditionally rely on materials with the combination of high refractive indices and low optical losses. Such materials are scarce for operation in visible spectrum and shorter wavelengths. This limitation can be circumvented by relaxing the requirement of low losses. We demonstrate that highly lossy dielectric materials can be structured to support optical resonances…
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Dielectric optical resonators traditionally rely on materials with the combination of high refractive indices and low optical losses. Such materials are scarce for operation in visible spectrum and shorter wavelengths. This limitation can be circumvented by relaxing the requirement of low losses. We demonstrate that highly lossy dielectric materials can be structured to support optical resonances that confine light in air voids. We theoretically design void resonances in the visible spectrum and identify resonant modes supported by void arrays. Experimentally, we fabricate void arrays in tungsten diselenide and characterize the confined resonances using far-field reflectance measurements and scanning near-field optical microscopy. Using van der Waals heterostructure assembly, we encapsulate the voids with hexagonal boron nitride which reduces the void volume causing a large spectral blue shift of the void resonance exceeding 150 nm. Our work demonstrates a versatile optical platform for lossy materials, expanding the range of suitable materials and the spectral range of photonic devices.
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Submitted 7 June, 2024;
originally announced June 2024.
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Programming moiré patterns in 2D materials by bending
Authors:
Mäelle Kapfer,
Bjarke S. Jessen,
Megan E. Eisele,
Matthew Fu,
Dorte R. Danielsen,
Thomas P. Darlington,
Samuel L. Moore,
Nathan R. Finney,
Ariane Marchese,
Valerie Hsieh,
Paulina Majchrzak,
Zhihao Jiang,
Deepnarayan Biswas,
Pavel Dudin,
José Avila,
Kenji Watanabe,
Takashi Taniguchi,
Søren Ulstrup,
Peter Bøggild,
P. J. Schuck,
Dmitri N. Basov,
James Hone,
Cory R. Dean
Abstract:
Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to rando…
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Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions due to random strain. Here, we demonstrate a new way to manipulate the moiré patterns in hetero- and homo-bilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with highly tunable wavelength and ultra-low disorder. Our results pave the way for detailed studies of ultra-low disorder moiré systems and the realization of precise strain-engineered devices.
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Submitted 21 September, 2022;
originally announced September 2022.
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Super-Resolution Nanolithography of Two-Dimensional Materials by Anisotropic Etching
Authors:
Dorte R. Danielsen,
Anton Lyksborg-Andersen,
Kirstine E. S. Nielsen,
Bjarke S. Jessen,
Timothy J. Booth,
Manh-Ha Doan,
Yingqiu Zhou,
Peter Bøggild,
Lene Gammelgaard
Abstract:
Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution variability issues, which especially affects the performance of 2D materials. Here we study how dry anisotropic etching of multilayer 2D materials…
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Nanostructuring allows altering of the electronic and photonic properties of two-dimensional (2D) materials. The efficiency, flexibility, and convenience of top-down lithography processes are however compromised by nm-scale edge roughness and resolution variability issues, which especially affects the performance of 2D materials. Here we study how dry anisotropic etching of multilayer 2D materials with sulfur hexafluoride (SF6) may overcome some of these issues, showing results for hexagonal boron nitride (hBN), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum disulfide (MoS2), molybdenum ditelluride (MoTe2). Scanning and transmission electron microscopy reveal that etching leads to anisotropic hexagonal features in the studied transition metal dichalcogenides, with the relative degree of anisotropy ranked as: WS2 > WSe2 > MoTe2 / MoS2. Etched holes are terminated by zigzag edges while etched dots (protrusions) are terminated by armchair edges. This can be explained by Wulff constructions, taking the relative stabilities of the edges and the AA stacking order into account. Patterns in WS2 are transferred to an underlying graphite layer, demonstrating a possible use for creating sub-10 nm features. In contrast, multilayer hBN exhibits no lateral anisotropy, but shows consistent vertical etch angles, independent of crystal orientation. This is used to create super-resolution lithographic patterns with ultra-sharp corners at the base of the hBN crystal, which are transferred into an underlying graphite crystal. We find that the anisotropic SF6 reactive ion etching process makes it possible to downsize nanostructures to obtain smooth edges, sharp corners, and feature sizes significantly below the resolution limit of electron beam lithography. The nanostructured 2D materials can be used themselves or as etch-masks to pattern other nanomaterials.
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Submitted 7 October, 2021;
originally announced October 2021.