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Analytical photoresponses of Schottky contact MoS2 phototransistors
Authors:
Jianyong Wei,
Yumeng Liu,
Yizhuo Wang,
Kai Li,
Zhentao Lian,
Maosong Xie,
Xinhan Yang,
Seyed Saleh Mousavi Khaleghi,
Fuxing Dai,
Weida Hu,
Xuejiao Gao,
Rui Yang,
Ya** Dan
Abstract:
High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two misplaced assumptions. In this work, we established an explicit analytical device model for Schottky contact MoS2 phototransistors that fits well with experimental…
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High-gain photodetectors based on two-dimensional (2D) semiconductors, in particular those in photoconductive mode, have been extensively investigated in the past decade. However, the classical photoconductive theory was derived on two misplaced assumptions. In this work, we established an explicit analytical device model for Schottky contact MoS2 phototransistors that fits well with experimental data. From the fitting results, we found that the Richardson constant of the MoS2 Schottky contact is temperature dependent, indicating that the Schottky contacts for the 2D material is best described by the mixed thermionic emission and diffusion model. Based on this device model, we further established an analytical photoresponse for the few-layer MoS2 phototransistors, from which we found the voltage distribution on the two Schottky contacts and the channel, and extracted the minority carrier recombination lifetimes. The lifetimes are comparable with the values found from transient photoluminescence measurements, which therefore validates our analytical photoresponses for Schottky contact 2D semiconducting phototransistors.
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Submitted 25 May, 2024;
originally announced May 2024.
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Probing the band splitting near the $Γ$ point in the van der Waals magnetic semiconductor CrSBr
Authors:
Kaiman Lin,
Yi Li,
Mahdi Ghorbani-Asl,
Zdenek Sofer,
Stephan Winnerl,
Artur Erbe,
Arkady V. Krasheninnikov,
Manfred Helm,
Shengqiang Zhou,
Ya** Dan,
Slawomir Prucnal
Abstract:
This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions ac…
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This study investigates the electronic band structure of Chromium Sulfur Bromide (CrSBr) through comprehensive photoluminescence (PL) characterization. We clearly identify low-temperature optical transitions between two closely adjacent conduction-band states and two different valence-band states. The analysis of the PL data robustly unveils energy splittings, bandgaps and excitonic transitions across different thicknesses of CrSBr, ranging from monolayer to bulk. Temperature-dependent PL measurements elucidate the stability of the band splitting below the Néel temperature, suggesting that magnons coupled with excitons are responsible for the symmetry breaking and brightening of the transitions from the secondary conduction band minimum (CBM2) to the global valence band maximum (VBM1). Collectively, these results not only reveal band splitting in both the conduction and valence bands, but also point to an intricate interplay between the optical, electronic and magnetic properties of antiferromagnetic two-dimensional van der Waals crystals.
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Submitted 2 April, 2024;
originally announced April 2024.
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Analytical photoresponses of gated nanowire photoconductors
Authors:
Yinchu Shen,
Jia**g He,
Yang Xu,
Kaiyou Wang,
Ya** Dan
Abstract:
Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, we investigated the physics of gate modulation in silicon nanowire photoconductors with the analytical photoresponse equations. It was found that the impact of gate voltage varies vas…
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Low-dimensional photoconductors have extraordinarily high photoresponse and gain, which can be modulated by gate voltages as shown in literature. However, the physics of gate modulation remains elusive. In this work, we investigated the physics of gate modulation in silicon nanowire photoconductors with the analytical photoresponse equations. It was found that the impact of gate voltage varies vastly for nanowires with different size. For the wide nanowires that cannot be pinched off by high gate voltage, we found that the photoresponses are enhanced by at least one order of magnitude due to the gate-induced electric passivation. For narrow nanowires that starts with a pinched-off channel, the gate voltage has no electric passivation effect but increases the potential barrier between source and drain, resulting in a decrease in dark and photo current. For the nanowires with an intermediate size, the channel is continuous but can be pinched off by a high gate voltage. The photoresponsivity and photodetectivity is maximized during the transition from the continuous channel to the pinched-off one. This work provides important insights on how to design high-performance photoconductors.
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Submitted 2 April, 2024;
originally announced April 2024.
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Near-infrared and Mid-infrared Light Emission of Boron-doped Crystalline Silicon
Authors:
Xiaoming Wang,
Jia**g He,
Ya** Dan
Abstract:
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an enticing strategy to transform highly inefficient silicon into a luminescent material. However, the emission at telecommunication wavelength suffers from the stro…
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The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an enticing strategy to transform highly inefficient silicon into a luminescent material. However, the emission at telecommunication wavelength suffers from the strong thermal quenching effect, resulting in low efficiency at room temperature. Here, we applied a new deep cooling process to address this issue. Interestingly, we find that electrons and holes recombine through defects emitting two photons, one in near infrared (NIR, 1.3~1.6 μm) and the other in mid-infrared band (MIR, around 3.5 μm). The PL intensity at NIR increases by three folds when the temperature increases from 77 K to 300K. Furthermore, the NIR light emission of reverse biased silicon diodes was significantly enhanced compared to forward bias, emitting the maximum output power of 42 nW at 60 mA. The results offer new opportunities for the development of IR light sources in integrated circuits.
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Submitted 18 January, 2024;
originally announced January 2024.
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Analytical impact excitation of Er/O/B co-doped Si light emitting diodes
Authors:
Xiaoming Wang,
Jia**g He,
Ao Wang,
Kun Zhang,
Yufei Sheng,
Weida Hu,
Chaoyuan **,
Hua Bao,
Ya** Dan
Abstract:
Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to impact excitation. However, physics of impact excitation in these devices remains largely unexplored. In this work, we fabricated an Er/O/B co-doped Si light emitti…
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Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to impact excitation. However, physics of impact excitation in these devices remains largely unexplored. In this work, we fabricated an Er/O/B co-doped Si light emitting diode which exhibits a strong electro-luminescence by the impact excitation of electrons inelastically colliding the Er ions. An analytical impact excitation theory was established to predict the electroluminescence intensity and internal quantum efficiency which fit well with the experimental data. From the fittings, we find that the excitable Er ions reach a record concentration of 1.9 x 10^19 cm-3 and up to 45% of them are in excitation state by impact excitation. This work has important implications for develo** efficient classical and quantum light sources based on rare earth elements.
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Submitted 11 January, 2024;
originally announced January 2024.
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Strong Exciton-Phonon Coupling as a Fingerprint of Magnetic Ordering in van der Waals Layered CrSBr
Authors:
Kaiman Lin,
Xiaoxiao Sun,
Florian Dirnberger,
Yi Li,
Jiang Qu,
Peiting Wen,
Zdenek Sofer,
Aljoscha Söll,
Stephan Winnerl,
Manfred Helm,
Shengqiang Zhou,
Ya** Dan,
Slawomir Prucnal
Abstract:
The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in…
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The layered, air-stable van der Waals antiferromagnetic compound CrSBr exhibits pronounced coupling between its optical, electronic, and magnetic properties. As an example, exciton dynamics can be significantly influenced by lattice vibrations through exciton-phonon coupling. Using low-temperature photoluminescence spectroscopy, we demonstrate the effective coupling between excitons and phonons in nanometer-thick CrSBr. By careful analysis, we identify that the satellite peaks predominantly arise from the interaction between the exciton and an optical phonon with a frequency of 118 cm-1 (~14.6 meV) due to the out-of-plane vibration of Br atoms. Power-dependent and temperature-dependent photoluminescence measurements support exciton-phonon coupling and indicate a coupling between magnetic and optical properties, suggesting the possibility of carrier localization in the material. The presence of strong coupling between the exciton and the lattice may have important implications for the design of light-matter interactions in magnetic semiconductors and provides new insights into the exciton dynamics in CrSBr. This highlights the potential for exploiting exciton-phonon coupling to control the optical properties of layered antiferromagnetic materials.
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Submitted 31 January, 2024; v1 submitted 9 August, 2023;
originally announced August 2023.
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Explicit gain equations for hybrid graphene-quantum-dot photodetectors
Authors:
Kaixiang Chen,
Chufan Zhang,
Xiaoxian Zang,
Fuyuan Ma,
Yuanzhen Chen,
Ya** Dan
Abstract:
Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain is often explained by the classical gain theory which is unfortunately an implicit function and may even be questionable. In this work, we managed to derive ex…
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Graphene is an attractive material for broadband photodetection but suffers from weak light absorption. Coating graphene with quantum dots can significantly enhance light absorption and create extraordinarily high photo gain. This high gain is often explained by the classical gain theory which is unfortunately an implicit function and may even be questionable. In this work, we managed to derive explicit gain equations for hybrid graphene-quantum-dot photodetectors. Due to the work function mismatch, lead sulfide (PbS) quantum dots coated on graphene will form a surface depletion region near the interface of quantum dots and graphene. Light illumination narrows down the surface depletion region, creating a photovoltage that gates the graphene. As a result, high photo gain in graphene is observed. The explicit gain equations are derived from the theoretical gate transfer characteristics of graphene and the correlation of the photovoltage with the light illumination intensity. The derived explicit gain equations fit well with the experimental data, from which physical parameters are extracted.
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Submitted 3 December, 2020;
originally announced December 2020.
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Explicit Gain Equations for Single Crystalline Photoconductors
Authors:
Jia**g He,
Kaixiang Chen,
Chulin Huang,
Xiaoming Wang,
Yongning He,
Ya** Dan
Abstract:
Photoconductors based on semiconducting thin films, nanowires and 2-dimensional atomic layers have been extensively investigated. But there is no explicit photogain equation that allows for fitting and designing photoresponses of these devices. In this work, we managed to derive explicit photogain equations for silicon nanowire photoconductors based on experimental observations. The silicon nanowi…
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Photoconductors based on semiconducting thin films, nanowires and 2-dimensional atomic layers have been extensively investigated. But there is no explicit photogain equation that allows for fitting and designing photoresponses of these devices. In this work, we managed to derive explicit photogain equations for silicon nanowire photoconductors based on experimental observations. The silicon nanowires were fabricated by patterning the device layer of silicon-on-insulator wafers by standard lithography that were doped with boron. It was found that the as-fabricated silicon nanowires have a surface depletion region ~ 32 nm wide. This depletion region protects charge carriers in the channel from surface scatterings, resulting in the independence of charge carrier mobilities on nanowire size. It is consistent with our Hall effect measurements but in contradiction with the accepted conclusion in the past decades that charge carrier mobilities become smaller for smaller nanowires due to surface scatterings. Under light illumination, the depletion region logarithmically narrows down and the nanowire channel widens accordingly. Photo Hall effect measurements show that the nanowire photoconductance is not contributed by the increase of carrier concentrations but the widening of the nanowire channel. As a result, a nanowire photoconductor can be modeled as a resistor in connection with floating Schottky junctions near the nanowire surfaces. Based on the photoresponses of a Schottky junction, we derived explicit photogain equations for nanowire photoconductors that are a function of light intensity and device physical parameters. The gain equations fit well with the experimental data, from which we extracted the minority carrier lifetimes that are consistent with the minority carrier lifetime in nanowires reported in literature.
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Submitted 3 December, 2020;
originally announced December 2020.
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Inverse Design of Composite Metal Oxide Optical Materials based on Deep Transfer Learning
Authors:
Rongzhi Dong,
Yabo Dan,
Xiang Li,
Jianjun Hu
Abstract:
Optical materials with special optical properties are widely used in a broad span of technologies, from computer displays to solar energy utilization leading to large dataset accumulated from years of extensive materials synthesis and optical characterization. Previously, machine learning models have been developed to predict the optical absorption spectrum from a materials characterization image…
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Optical materials with special optical properties are widely used in a broad span of technologies, from computer displays to solar energy utilization leading to large dataset accumulated from years of extensive materials synthesis and optical characterization. Previously, machine learning models have been developed to predict the optical absorption spectrum from a materials characterization image or vice versa. Herein we propose TLOpt, a transfer learning based inverse optical materials design algorithm for suggesting material compositions with a desired target light absorption spectrum. Our approach is based on the combination of a deep neural network model and global optimization algorithms including a genetic algorithm and Bayesian optimization. A transfer learning strategy is employed to solve the small dataset issue in training the neural network predictor of optical absorption spectrum using the Magpie materials composition descriptor. Our extensive experiments show that our algorithm can inverse design the materials composition with stoichiometry with high accuracy.
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Submitted 24 August, 2020;
originally announced August 2020.
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Anisotropic behavior of TiB2 nanoparticles reinforced 2024Al composites rolling sheet
Authors:
J. M. Li,
J. Liu,
L. Wang,
Z. Chen,
Q. W. Shi,
C. Y. Dan,
Y. Wu,
S. Y. Zhong,
H. W. Wang
Abstract:
The in-plane anisotropy (IPA) of mechanical properties existed in plate products is often undesired since it limits the industrial application and increases the difficulty of material processing. It is thus one of the important factors which requires strict control during the manufacture of high-performance aluminum alloy plates. The anisotropic behavior of TiB2/2024Al composite rolling sheet unde…
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The in-plane anisotropy (IPA) of mechanical properties existed in plate products is often undesired since it limits the industrial application and increases the difficulty of material processing. It is thus one of the important factors which requires strict control during the manufacture of high-performance aluminum alloy plates. The anisotropic behavior of TiB2/2024Al composite rolling sheet under different heat treatment is studied in this article. T4 heat treated specimen shows good isotropy of yield strength and its texture components are significantly weakened compared with traditional Al alloys. The evolution of microstructures for T4 specimen was studied. The submicron TiB2 particles increase the driving force of recrystallization during rolling process and static recrystallization (SRX) is stimulated, thus induces texture randomization. Anisotropic behavior of yield strength occurs in specimen after T3 heat treatment. It is supposed that the difference in the activation of slip system under different loading direction gives rise to this anisotropy.
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Submitted 15 January, 2020;
originally announced January 2020.
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Topological spin excitations observed in a three-dimensional antiferromagnet
Authors:
Weiliang Yao,
Chenyuan Li,
Lichen Wang,
Shangjie Xue,
Yang Dan,
Kazuki Iida,
Kazuya Kamazawa,
Kangkang Li,
Chen Fang,
Yuan Li
Abstract:
Band topology, or global wave-function structure that enforces novel properties in the bulk and on the surface of crystalline materials, is currently under intense investigations for both fundamental interest and its technological promises. While band crossing of non-trivial topological nature was first studied in three dimensions for electrons, the underlying physical idea is not restricted to fe…
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Band topology, or global wave-function structure that enforces novel properties in the bulk and on the surface of crystalline materials, is currently under intense investigations for both fundamental interest and its technological promises. While band crossing of non-trivial topological nature was first studied in three dimensions for electrons, the underlying physical idea is not restricted to fermionic excitations. In fact, experiments have confirmed the possibility to have topological band crossing of electromagnetic waves in artificial structures. Fundamental bosonic excitations in real crystals, however, have not been observed to exhibit the counterpart under ambient pressure and magnetic field, where the difficulty is in part because natural materials cannot be precisely engineered like artificial structures. Here, we use inelastic neutron scattering to reveal the presence of topological spin excitations (magnons) in a three-dimensional antiferromagnet, Cu3TeO6, which features a unique lattice of magnetic spin-1/2 Cu2+ ions. Beyond previous understanding, we find that the material's spin lattice possesses a variety of exchange interactions, with the interaction between the ninth-nearest neighbours being as strong as that between the nearest neighbours. Although theoretical analysis indicates that the presence of topological magnon band crossing is independent of model details, Cu3TeO6 turns out to be highly favourable for the experimental observation, as its optical magnons are spectrally sharp and intense due to the highly interconnected spin network and the large magnetic cell. The observed magnon band crossing generally has the form of a special type of Z2-topological nodal lines that are yet to be found in fermion systems, rendering magnon systems a fertile ground for exploring novel band topology.
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Submitted 2 November, 2017;
originally announced November 2017.
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A photoconductor intrinsically has no gain
Authors:
Ya** Dan,
Xingyan Zhao,
Kaixiang Chen,
Abdelmadjid Mesli
Abstract:
In the past 50 years, the high gain in quantum efficiency of photoconductors is often explained by a widely accepted theory in which the photogain is proportional to the minority carrier lifetime and inversely proportional to the carrier transit time across the photoconductor. It occasionally misleads scientists to believe that a high-speed and high-gain photodetector can be made simply by shorten…
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In the past 50 years, the high gain in quantum efficiency of photoconductors is often explained by a widely accepted theory in which the photogain is proportional to the minority carrier lifetime and inversely proportional to the carrier transit time across the photoconductor. It occasionally misleads scientists to believe that a high-speed and high-gain photodetector can be made simply by shortening the device length. The theory is derived on the assumption that the distribution of photogenerated excess carriers is spatially uniform. In this Letter, we find that this assumption is not valid for a photoconductive semiconductor due to the metal-semiconductor boundary at the two metal electrodes inducing carrier confinement. By solving the continuity equation and performing numerical simulations, we conclude that a photoconductor intrinsically has no gain or at least no high gain, no matter how short the transit time and how long the minority lifetime is. The high gain observed in experiments comes from other extrinsic effects such as defects, surface states and surface depletion regions that localize excess minority carriers, leaving a large number of excess majority carriers accumulated in the conduction channel for the photogain. Following the Ohm's Law, a universal equation governing the photogain in a photoconductor is established at the end of this Letter.
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Submitted 11 September, 2018; v1 submitted 10 November, 2015;
originally announced November 2015.
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Quasiclassical analysis of vortex lattice states in Rashba noncentrosymmetric superconductors
Authors:
Yuichiro Dan,
Ryusuke Ikeda
Abstract:
Vortex lattice states occurring in noncentrosymmetric superconductors with the spin-orbit coupling of Rashba type under a magnetic field parallel to the symmetry plane are examined by assuming the $s$-wave pairing case and in an approach combining the quasiclassical theory with the Landau level expansion of the superconducting order parameter. The resulting field-temperature phase diagrams include…
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Vortex lattice states occurring in noncentrosymmetric superconductors with the spin-orbit coupling of Rashba type under a magnetic field parallel to the symmetry plane are examined by assuming the $s$-wave pairing case and in an approach combining the quasiclassical theory with the Landau level expansion of the superconducting order parameter. The resulting field-temperature phase diagrams include not only a discontinuous transition but a continuous crossover between different vortex lattice structures, and, further, a critical end point of a structural transition line is found in an intermediate field and at a low temperature in the present approach. It is pointed out that the strange field dependence of the vortex lattice structure is a consequence of that of an anisotropy stemming from the Rashba spin-orbit coupling, and that the critical end point is related to the helical phase modulation peculiar to these materials in the ideal Pauli-limited case. Further, calculation results on the local density of states detectable in STM experiments are also presented.
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Submitted 13 October, 2015; v1 submitted 18 May, 2015;
originally announced May 2015.
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Optoelectronically probing the density of nanowire surface trap states to the single state limit
Authors:
Ya** Dan
Abstract:
Due to the large surface-to-volume ratio, surface trap states play a dominant role in the optoelectronic properties of nanoscale devices(1-6). Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques based on me…
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Due to the large surface-to-volume ratio, surface trap states play a dominant role in the optoelectronic properties of nanoscale devices(1-6). Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques based on metal-insulator-semiconductor (MIS) structures(7) and deep level transient spectroscopy (DLTS)(8-11). Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the limit of a single trap state. Unlike traditional capacitive techniques (Fig1a), in this method we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states (Fig1b). The experimental data show that the energy density of nanowire surface trap states is in a range from 10^9cm^-2/eV at deep levels to 10^12cm^-2/eV in the middle of the upper half bandgap. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.
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Submitted 7 September, 2014;
originally announced September 2014.
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Self-aligned process for forming microlenses at the tips of vertical silicon nanowires by atomic layer deposition
Authors:
Ya** Dan,
Kaixiang Chen,
Kenneth B. Crozier
Abstract:
The microlens is a key enabling technology in optoelectronics, permitting light to be efficiently coupled to and from devices such as image sensors and light-emitting diodes. Their ubiquitous nature motivates the development of new fabrication techniques, since existing methods face challenges as microlenses are scaled to smaller dimensions. Here, we demonstrate the formation of microlenses at the…
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The microlens is a key enabling technology in optoelectronics, permitting light to be efficiently coupled to and from devices such as image sensors and light-emitting diodes. Their ubiquitous nature motivates the development of new fabrication techniques, since existing methods face challenges as microlenses are scaled to smaller dimensions. Here, we demonstrate the formation of microlenses at the tips of vertically-oriented silicon nanowires via a rapid atomic layer deposition (ALD) process. The nature of the process is such that the microlenses are centered on the nanowires, and there is a self-limiting effect on the final sizes of the microlenses arising from the nanowire spacing. Finite difference time domain electromagnetic simulations are performed of microlens focusing properties, including showing their ability to enhance visible-wavelength absorption in silicon nanostructures.
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Submitted 19 May, 2014;
originally announced May 2014.
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Dramatic reduction of surface recombination by in-situ surface passivation of silicon nanowires
Authors:
Ya** Dan,
Kwanyong Seo,
Kuniharu Takei,
Jhim H. Meza,
Ali Javey,
Kenneth B. Crozier
Abstract:
Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude,[9] often resulting in the low efficiency (a few…
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Nanowires have unique optical properties [1-4] and are considered as important building blocks for energy harvesting applications such as solar cells. [2, 5-8] However, due to their large surface-to-volume ratios, the recombination of charge carriers through surface states reduces the carrier diffusion lengths in nanowires a few orders of magnitude,[9] often resulting in the low efficiency (a few percent or less) of nanowire-based solar cells. [7, 8, 10, 11] Reducing the recombination by surface passivation is crucial for the realization of high performance nanosized optoelectronic devices, but remains largely unexplored. [7, 12-14] Here we show that a thin layer of amorphous silicon (a-Si) coated on a single-crystalline silicon nanowire (sc-SiNW), forming a core-shell structure in-situ in the vapor-liquid-solid (VLS) process, reduces the surface recombination nearly two orders of magnitude. Under illumination of modulated light, we measure a greater than 90-fold improvement in the photosensitivity of individual core-shell nanowires, compared to regular nanowires without shell. Simulations of the optical absorption of the nanowires indicate that the strong absorption of the a-Si shell contributes to this effect, but we conclude that the effect is mainly due to the enhanced carrier lifetime by surface passivation.
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Submitted 25 May, 2011;
originally announced May 2011.
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Size-selective nanoparticle growth on few-layer graphene films
Authors:
Zhengtang Luo,
Luke A. Somers,
Ya** Dan,
Thomas Ly,
Nicholas J. Kybert,
E. J. Mele,
A. T. Charlie Johnson
Abstract:
We observe that gold atoms deposited by physical vapor deposition onto few layer graphenes condense upon annealing to form nanoparticles with an average diameter that is determined by the graphene film thickness. The data are well described by a theoretical model in which the electrostatic interactions arising from charge transfer between the graphene and the gold particle limit the size of the…
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We observe that gold atoms deposited by physical vapor deposition onto few layer graphenes condense upon annealing to form nanoparticles with an average diameter that is determined by the graphene film thickness. The data are well described by a theoretical model in which the electrostatic interactions arising from charge transfer between the graphene and the gold particle limit the size of the growing nanoparticles. The model predicts a nanoparticle size distribution characterized by a mean diameter D that follows a scaling law D proportional to m^(1/3), where m is the number of carbon layers in the few layer graphene film.
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Submitted 19 January, 2010;
originally announced January 2010.
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Intrinsic Response of Graphene Vapor Sensors
Authors:
Ya** Dan,
Ye Lu,
Nicholas J. Kybert,
A. T. Charlie Johnson
Abstract:
Graphene is a purely two-dimensional material that has extremely favorable chemical sensor properties. It is known, however, that conventional nanolithographic processing typically leaves a resist residue on the graphene surface, whose impact on the sensor characteristics of the system has not yet been determined. Here we show that the contamination layer both degrades the electronic properties…
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Graphene is a purely two-dimensional material that has extremely favorable chemical sensor properties. It is known, however, that conventional nanolithographic processing typically leaves a resist residue on the graphene surface, whose impact on the sensor characteristics of the system has not yet been determined. Here we show that the contamination layer both degrades the electronic properties of the graphene and masks graphene s intrinsic sensor responses. The contamination layer chemically dopes the graphene, enhances carrier scattering, and acts as an absorbent layer that concentrates analyte molecules at the graphene surface, thereby enhancing the sensor response. We demonstrate a cleaning process that verifiably removes the contamination on the device structure and allows the intrinsic chemical responses of graphene to be measured.
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Submitted 19 November, 2008;
originally announced November 2008.
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Gas Sensing Properties of Single Conducting Polymer Nanowires and the Effect of Temperature
Authors:
Ya** Dan,
Yanyan Cao,
Tom E. Mallouk,
Stephane Evoy,
A. T. Charlie Johnson
Abstract:
We measured the electronic properties and gas sensing responses of template-grown poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS)-based nanowires. The nanowires have a "striped" structure (gold-PEDOT/PSS-gold), typically 8um long (1um-6um-1um for each section, respectively) and 220 nm in diameter. Single-nanowire devices were contacted by pre-fabricated gold electrodes using…
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We measured the electronic properties and gas sensing responses of template-grown poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS)-based nanowires. The nanowires have a "striped" structure (gold-PEDOT/PSS-gold), typically 8um long (1um-6um-1um for each section, respectively) and 220 nm in diameter. Single-nanowire devices were contacted by pre-fabricated gold electrodes using dielectrophoretic assembly. A polymer conductivity of 11.5 +/- 0.7 S/cm and a contact resistance of 27.6 +/- 4 kOhm were inferred from measurements of nanowires of varying length and diameter. The nanowire sensors detect a variety of odors, with rapid response and recovery (seconds). The response (R-R0)/R0 varies as a power law with analyte concentration.
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Submitted 19 November, 2008; v1 submitted 23 August, 2008;
originally announced August 2008.
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Chemical Gas Sensors Based On Nanowires
Authors:
Ya** Dan,
Stephane Evoy,
A. T. Charlie Johnson
Abstract:
Chemical gas sensors based on nanowires can find a wide range of applications in clinical assaying, environmental emission control, explosive detection, agricultural storage and ship**, and workplace hazard monitoring. Sensors in the forms of nanowires are expected to have significantly enhanced performance due to high surface-volume ratio and quasi-one-dimensional confinement in nanowires. In…
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Chemical gas sensors based on nanowires can find a wide range of applications in clinical assaying, environmental emission control, explosive detection, agricultural storage and ship**, and workplace hazard monitoring. Sensors in the forms of nanowires are expected to have significantly enhanced performance due to high surface-volume ratio and quasi-one-dimensional confinement in nanowires. Indeed, chemical gas sensors based on nanowires with a ppb level sensitivity have been demonstrated. In this review, the fundamental aspects on (i) methods of nanowire synthesis (ii) performance of nanowire sensors, (iii) chemiresistors, transistor sensors, and their sensing mechanism, and (iv) assembly technologies will be summarized and discussed. The prospects of the future research on chemical gas sensors based on nanowires will be also addressed.
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Submitted 30 April, 2008;
originally announced April 2008.
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Dielectrophoretically Assembled Polymer Nanowires for Gas Sensing
Authors:
Ya** Dan,
Yanyan Cao,
Tom E. Mallouk,
Alan T. Johnson,
Stephane Evoy
Abstract:
We measured the electronic properties and gas sensing response of nanowires containing segments of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) that were synthesized using anodic aluminum oxide (AAO) membranes. The nanowires have a "striped" structure of gold-PEDOT/PSS-gold and are typically 8 um long (1 um-6 um-1 um for each section, respectively) and 220 nm in diameter.…
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We measured the electronic properties and gas sensing response of nanowires containing segments of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT/PSS) that were synthesized using anodic aluminum oxide (AAO) membranes. The nanowires have a "striped" structure of gold-PEDOT/PSS-gold and are typically 8 um long (1 um-6 um-1 um for each section, respectively) and 220 nm in diameter. Dielectrophoretic assembly was used to position single nanowires on pre-fabricated gold electrodes. A polymer conductivity of 11.5 +/- 0.7 S/cm and a contact resistance of 27.6 +/- 4 kOhm were inferred from resistance measurements of nanowires of varying length and diameter. When used as gas sensors, the wires showed a resistance change of 10.5%, 9%, and 4% at the saturation vapor pressure of acetone, methanol and ethanol, respectively. Sensor response and recovery were rapid (seconds) with excellent reproducibility in time and across devices. "Striped" template-grown nanowires are thus intriguing candidates for use in electronic nose vapor sensing systems.
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Submitted 26 February, 2007;
originally announced February 2007.
