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Anomalous magneto-thermoelectric behavior in massive Dirac materials
Authors:
Yanan Li,
Huichao Wang,
**gyue Wang,
Chunming Wang,
Yanzhao Liu,
Jun Ge,
**g**g Niu,
Wenjie Zhang,
Pinyuan Wang,
Ran Bi,
**glei Zhang,
Ji Yan Dai,
Jiaqiang Yan,
David Mandrus,
Nitin Samarth,
Haizhou Lu,
Xiaosong Wu,
Jian Wang
Abstract:
Extensive studies of electron transport in Dirac materials have shown positive magneto-resistance (MR) and positive magneto-thermopower (MTP) in a magnetic field perpendicular to the excitation current or thermal gradient. In contrast, measurements of electron transport often show a negative longitudinal MR and negative MTP for a magnetic field oriented along the excitation current or thermal grad…
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Extensive studies of electron transport in Dirac materials have shown positive magneto-resistance (MR) and positive magneto-thermopower (MTP) in a magnetic field perpendicular to the excitation current or thermal gradient. In contrast, measurements of electron transport often show a negative longitudinal MR and negative MTP for a magnetic field oriented along the excitation current or thermal gradient; this is attributed to the chiral anomaly in Dirac materials. Here, we report a very different magneto-thermoelectric transport behavior in the massive Dirac material ZrTe5. Although thin flakes show a commonly observed positive MR in a perpendicular magnetic field, distinct from other Dirac materials, we observe a sharp negative MTP. In a parallel magnetic field, we still observe a negative longitudinal MR, however, a remarkable positive MTP is observed for the fields parallel to the thermal gradients. Our theoretical calculations suggest that this anomalous magneto-thermoelectric behavior can be attributed to the screened Coulomb scattering. This work demonstrates the significance of impurity scattering in the electron transport of topological materials and provides deep insight into the novel magneto-transport phenomena in Dirac materials.
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Submitted 30 November, 2022;
originally announced November 2022.
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High-temperature Anomalous Hall Effect in Transition Metal Dichalcogenide-Ferromagnetic Insulator Heterostructure
Authors:
Sheung Mei Ng,
Hui Chao Wang,
Yu Kuai Liu,
Hon Fai Wong,
Hei Man Yau,
Chun Hung Suen,
Ze Han Wu,
Chi Wah Leung,
Ji Yan Dai
Abstract:
Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this hete…
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Integration of transition metal dichalcogenides (TMDs) on ferromagnetic materials (FM) may yield fascinating physics and promise for electronics and spintronic applications. In this work, high-temperature anomalous Hall effect (AHE) in the TMD ZrTe2 thin film using heterostructure approach by depositing it on ferrimagnetic insulator YIG (Y3Fe5O12, yttrium iron garnet) is demonstrated. In this heterostructure, significant anomalous Hall effect can be observed at temperatures up to at least 400 K, which is a record high temperature for the observation of AHE in TMDs, and the large RAHE is more than one order of magnitude larger than those previously reported value in topological insulators or TMDs based heterostructures. The magnetization of interfacial reaction-induced ZrO2 between YIG and ZrTe2 is believed to play a crucial role for the induced high-temperature anomalous Hall effect in the ZrTe2. These results reveal a promising system for the room-temperature spintronic device applications, and it may also open a new avenue toward introducing magnetism to TMDs and exploring the quantum AHE at higher temperatures considering the prediction of nontrivial topology in ZrTe2.
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Submitted 27 February, 2020;
originally announced February 2020.
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Effect of symmetry on the electronic DOS, charge fluctuations and electron-phonon coupling in carbon chains
Authors:
C. H. Wong,
J. Y. Dai,
M. B. Guseva,
V. N. Rychkov,
E. A. Buntov,
A. F. Zatsepin
Abstract:
A theoretical model is provided to address the parameters influencing the electronic properties of kink-structured carbon chain at 0K. It is studied by the principle of DFT and solving the numerical 1D time-independent Schrödinger equation of electron and phonon simultaneously. Two different lengths of branches A and B, are occupied alternatively to generate the asymmetric carbon chain. The ratio…
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A theoretical model is provided to address the parameters influencing the electronic properties of kink-structured carbon chain at 0K. It is studied by the principle of DFT and solving the numerical 1D time-independent Schrödinger equation of electron and phonon simultaneously. Two different lengths of branches A and B, are occupied alternatively to generate the asymmetric carbon chain. The ratio of the asymmetric branch length,RAB=A/B, plays an important role in the electronic density of states DOS around Fermi level Ef . The highest DOS(Ef) occurs if the RAB equals to 2 and while the Fermi level coincides with the Von-Hove singularity at RAB=3. The location of the singularity point relative to the Ef is controllable via branch length interestingly. By comparison with the symmetric case, tuning the branch length asymmetrically shows a stronger impact to shift the Ef to the singularity point. The numerical solution of the 1D time independent Schrodinger equation of phonon indicates that the kink reinforces the charge fluctuations but the fluctuations are minimized when the RAB goes up. Based on the simulation results, the electron phonon coupling of the carbon nanowire decreases with chain length. In comparison to the symmetric structure, the electron phonon coupling of the asymmetric carbon chain is higher. The maximum electron phonon coupling of the asymmetric carbon chain takes place at RAB=2 . However, the weakening of the electron phonon coupling is observed owing to ultrahigh concentration of kinks. The reduction of the electron phonon coupling of the carbon chain is occurred under pressure.
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Submitted 17 November, 2016;
originally announced November 2016.
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Dynamic Modulation of the Transport Properties of the LaAlO3/SrTiO3 Interface Using Uniaxial Strain
Authors:
Fang Zhang,
Yue-Wen Fang,
Ngai Yui Chan,
Wing Chong Lo,
Dan Feng Li,
Chun-Gang Duan,
Feng Ding,
Ji Yan Dai
Abstract:
Among the interfacial transport modulations to the LaAlO3/SrTiO3 (LAO/STO) heterostructure, mechanical strain has been proven to be an effective approach by growing the LAO/STO films on different substrates with varying lattice mismatches to STO. However, this lattice-mismatch-induced strain effect is static and biaxial, hindering the study of the strain effect in a dynamic way. In this work we re…
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Among the interfacial transport modulations to the LaAlO3/SrTiO3 (LAO/STO) heterostructure, mechanical strain has been proven to be an effective approach by growing the LAO/STO films on different substrates with varying lattice mismatches to STO. However, this lattice-mismatch-induced strain effect is static and biaxial, hindering the study of the strain effect in a dynamic way. In this work we realize dynamic and uniaxial strain to the LAO/STO oxide heterostructure at low temperature, through mechanical coupling from a magnetostrictive template. This anisotropic strain results in symmetry breaking at the interface and induces further splitting of the electronic band structure and therefore produces different conductivities along the x and y in-plane directions. In particular, we observe that along the strained direction the interface conductivity decreases by up to 70% under a tensile strain, while it increases by 6.8% under a compressive strain at 2 K. Also, it is revealed that the modulation on the interfacial transport property can be anisotropic, i.e., the resistance changes differently when an excitation current is parallel or perpendicular to the strain direction. This approach of strain engineering provides another degree of freedom for control of transport properties of oxide heterostructures and opens an additional way to investigate strain effects in materials science.
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Submitted 10 July, 2016;
originally announced July 2016.
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Effects of Al Addition on the Native Defects in Hafnia
Authors:
Quan Li,
K. M. Koo,
W. M. Lau,
P. F. Lee,
J. Y. Dai,
Z. F. Hou,
X. G. Gong
Abstract:
Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films as a function of Al concentration discloses the evolution of such bands while the density of states of the former one reduces drastically with the Al additio…
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Two occupied native defect bands are detected in pure HfO2, with one located in the middle of the band gap and the other slightly above the valence band maximum. The investigation on the electronic structures of hafnium aluminate thin films as a function of Al concentration discloses the evolution of such bands while the density of states of the former one reduces drastically with the Al addition, that of the later one remains rather unaffected. Our first principles studies of the system attribute the two bands to the charged oxygen vacancy, and the oxygen interstitial related defect states of the HfO2, respectively. We further demonstrate that the observed evolution of the defect bands originates from the interaction in-between the added Al and the native defects of pure HfO2, which effectively passivates the VO+ induced mid-gap states but has little effect on other aspects of the electronic structure of the material.
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Submitted 26 June, 2005;
originally announced June 2005.
