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Optically Probing Unconventional Superconductivity in Atomically Thin Bi$_2$Sr$_2$Ca$_{0.92}$Y$_{0.08}$Cu$_2$O$_{8+δ}$
Authors:
Yunhuan Xiao,
**gda Wu,
Jerry I Dadap,
Kashif Masud Awan,
Dongyang Yang,
**g Liang,
Kenji Watanabe,
Takashi Taniguchi,
Marta Zonno,
Martin Bluschke,
Hiroshi Eisaki,
Martin Greven,
Andrea Damascelli,
Ziliang Ye
Abstract:
Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to bulk have recently been realized, although the device fabrication remains a challenge and limits the potential for many novel studies and applications. Here we use an optical pump-probe approach to noninvasively study the unconventional superconductivity in atomically thin Bi$_2$Sr$_2$Ca$_{0.92}$Y…
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Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to bulk have recently been realized, although the device fabrication remains a challenge and limits the potential for many novel studies and applications. Here we use an optical pump-probe approach to noninvasively study the unconventional superconductivity in atomically thin Bi$_2$Sr$_2$Ca$_{0.92}$Y$_{0.08}$Cu$_2$O$_{8+δ}$ (Y-Bi2212). Apart from finding an optical response due to the superconducting phase transition that is similar to bulk Y-Bi2212, we observe that the sign and amplitude of the pump-probe signal in the atomically thin flake vary significantly in different dielectric environments depending on the nature of the optical excitation. By exploiting the spatial resolution of the optical probe, we uncover the exceptional sensitivity of monolayer Y-Bi2212 to the environment. Our results provide the first optical evidence for the intralayer nature of the superconducting condensate in Bi2212, and highlight the role of double-sided encapsulation in preserving superconductivity in atomically thin cuprates.
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Submitted 6 March, 2024;
originally announced March 2024.
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Non-volatile electrical polarization switching via domain wall release in 3R-MoS$_2$ bilayer
Authors:
Dongyang Yang,
**g Liang,
**gda Wu,
Yunhuan Xiao,
Jerry I. Dadap,
Kenji Watanabe,
Takashi Taniguchi,
Ziliang Ye
Abstract:
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS$_2$ with a natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through an asymmetric interlayer coupling…
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Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a bilayer MoS$_2$ with a natural rhombohedral stacking, where the spontaneous polarization is coupled with excitonic effects through an asymmetric interlayer coupling. Using optical spectroscopy and imaging techniques, we observe how a released domain wall switches the polarization of a large single domain. Our results highlight the importance of domain walls in the polarization switching of non-twisted rhombohedral transition metal dichalcogenides and open new opportunities for the non-volatile control of their optical response.
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Submitted 20 November, 2023;
originally announced November 2023.
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Shear-strain-induced two-dimensional slip avalanches in rhombohedral MoS2
Authors:
**g Liang,
Dongyang Yang,
Yunhuan Xiao,
Sean Chen,
Jerry I. Dadap,
Joerg Rottler,
Ziliang Ye
Abstract:
Slip avalanches are ubiquitous phenomena occurring in 3D materials under shear strain and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in 2D materials. Here we show some evidence of two-dimensional slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near t…
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Slip avalanches are ubiquitous phenomena occurring in 3D materials under shear strain and their study contributes immensely to our understanding of plastic deformation, fragmentation, and earthquakes. So far, little is known about the role of shear strain in 2D materials. Here we show some evidence of two-dimensional slip avalanches in exfoliated rhombohedral MoS2, triggered by shear strain near the threshold level. Utilizing interfacial polarization in 3R-MoS2, we directly probe the stacking order in multilayer flakes and discover a wide variety of polarization domains with sizes following a power-law distribution. These findings suggest slip avalanches can occur during the exfoliation of 2D materials, and the stacking orders can be changed via shear strain. Our observation has far-reaching implications for develo** new materials and technologies, where precise control over the atomic structure of these materials is essential for optimizing their properties as well as for our understanding of fundamental physical phenomena.
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Submitted 21 June, 2023;
originally announced June 2023.
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Ultrafast response of spontaneous photovoltaic effect in 3R-MoS2-based heterostructures
Authors:
**gda Wu,
Dongyang Yang,
**g Liang,
Max Werner,
Evgeny Ostroumov,
Yunhuan Xiao,
Kenji Watanabe,
Takashi Taniguchi,
Jerry I. Dadap,
David Jones,
Ziliang Ye
Abstract:
Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show the photovoltaic effect has an external quantum efficiency of 10\% for devices with only two atomi…
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Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graphene. Such a field gives rise to a spontaneous photovoltaic effect without needing any p-n junction. In this work, we show the photovoltaic effect has an external quantum efficiency of 10\% for devices with only two atomic layers of MoS2 at low temperatures, and identify a picosecond-fast photocurrent response, which translates to an intrinsic device bandwidth at ~ 100-GHz level. To this end, we have developed a non-degenerate pump-probe photocurrent spectroscopy technique to deconvolute the thermal and charge-transfer processes, thus successfully revealing the multi-component nature of the photocurrent dynamics. The fast component approaches the limit of the charge-transfer speed at the graphene-MoS2 interface. The remarkable efficiency and ultrafast photoresponse in the graphene-3R-MoS2 devices support the use of ferroelectric van der Waals materials for future high-performance optoelectronic applications.
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Submitted 12 November, 2022;
originally announced November 2022.
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Optically probing the asymmetric interlayer coupling in rhombohedral-stacked MoS2 bilayer
Authors:
**g Liang,
Dongyang Yang,
**gda Wu,
Jerry I Dadap,
Kenji Watanabe,
Takashi Taniguchi,
Ziliang Ye
Abstract:
The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moiré superlattice may endow exotic physical phenomena, such as moiré excitons and correlated electronic phases. To gain insight i…
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The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolayers are stacked with a twist angle, the periodic interlayer coupling modulation due to the moiré superlattice may endow exotic physical phenomena, such as moiré excitons and correlated electronic phases. To gain insight into these new phenomena, it is crucial to unveil the underlying coupling between atomic layers. Recently, the rhombohedral-stacked transition metal dichalcogenide (TMD) bilayer has attracted significant interest because of the emergence of an out-of-plane polarization from non-ferroelectric monolayer constituents. However, as a key parameter responsible for the physical properties, the interlayer coupling and its relationship with ferroelectricity in them remain elusive. Here we probe the asymmetric interlayer coupling between the conduction band of one layer and the valence band from the other layer in a 3R-MoS2 bilayer, which can be understood as a result of a layer-dependent Berry phase winding. By performing optical spectroscopy in a dual-gated device, we show a type-II band alignment exists at K points in the 3R-MoS2 bilayer. Furthermore, by unraveling various contributions to the band offset, we quantitatively determine the asymmetric interlayer coupling and spontaneous polarization in 3R-MoS2.
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Submitted 14 September, 2022;
originally announced September 2022.
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Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator
Authors:
Wencan **,
Suresh Vishwanath,
Jianpeng Liu,
Lingyuan Kong,
Rui Lou,
Zhongwei Dai,
Jerzy T. Sadowski,
Xinyu Liu,
Huai-Hsun Lien,
Alexander Chaney,
Yimo Han,
Micheal Cao,
Junzhang Ma,
Tian Qian,
Jerry I. Dadap,
Shancai Wang,
Malgorzata Dobrowolska,
Jacek Furdyna,
David A. Muller,
Karsten Pohl,
Hong Ding,
Huili Grace Xing,
Richard M. Osgood, Jr
Abstract:
Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density fu…
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Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, are used to demonstrate conclusively that a rock-salt SnSe $\{111\}$ thin film epitaxially-grown on \ce{Bi2Se3} has a stable Sn-terminated surface. These observations are supported by low energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe $\{111\}$ thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe $\{111\}$ thin film is shown to yield a high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration.
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Submitted 10 April, 2017;
originally announced April 2017.
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Engineering the structural and electronic phases of MoTe2 through W substitution
Authors:
D. Rhodes,
D. A. Chenet,
B. E. Janicek,
C. Nyby,
Y. Lin,
W. **,
D. Edelberg,
E. Mannebach,
N. Finney,
A. Antony,
T. Schiros,
T. Klarr,
A. Mazzoni,
M. Chin,
Y. -c Chiu,
W. Zheng,
Q. R. Zhang,
F. Ernst,
J. I. Dadap,
X. Tong,
J. Ma,
R. Lou,
S. Wang,
T. Qian,
H. Ding
, et al. (8 additional authors not shown)
Abstract:
MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted t…
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MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical do**, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe$_2$ through W substitution by unveiling the phase-diagram of the Mo$_{1-x}$W$_x$Te$_2$ solid solution which displays a semiconducting to semimetallic transition as a function of $x$. We find that only $\sim 8$ \% of W stabilizes the $T_d-$phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe$_2$.
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Submitted 8 October, 2016;
originally announced October 2016.
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Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist
Authors:
Wencan **,
Po-Chun Yeh,
Nader Zaki,
Daniel Chenet,
Ghidewon Arefe,
Yufeng Hao,
Alessandro Sala,
Tevfik Onur Mentes,
Jerry I. Dadap,
Andrea Locatelli,
James Hone,
Richard M. Osgood Jr
Abstract:
We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolay…
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We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy and microprobe angle-resolved photoemission spectroscopy measurements to image the surface, determine twist angle, and map the electronic structure of these artificial heterostructures. For monolayer graphene on monolayer MoS2, the resulting band structure reveals the absence of hybridization between the graphene and MoS2 electronic states. Further, the graphene-derived electronic structure in the heterostructures remains intact, irrespective of the twist angle between the two materials. In contrast, however, the electronic structure associated with the MoS2 layer is found to be twist-angle dependent; in particular, the relative difference in the energy of the valence band maximum at Γ and K of the MoS2 layer varies from approximately 0 to 0.2 eV. Our results suggest that monolayer MoS2 within the heterostructure becomes predominantly an indirect bandgap system for all twist angles except in the proximity of 30 degrees. This result enables potential bandgap engineering in van der Waals heterostructures comprised of monolayer structures.
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Submitted 16 November, 2015; v1 submitted 2 October, 2015;
originally announced October 2015.
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Optical Third-Harmonic Generation in Graphene
Authors:
Sung-Young Hong,
Jerry I. Dadap,
Nicholas Petrone,
Po-Chun Yeh,
James Hone,
Richard M. Osgood Jr
Abstract:
We report strong third-harmonic generation (THG) in monolayer graphene grown by chemical vapor deposition (CVD) and transferred to an amorphous silica (glass) substrate; the photon energy is in three-photon resonance with the exciton-shifted van Hove singularity at the M-point of graphene. Our polarization- and azimuthal-rotation-dependent measurements confirm the expected symmetry properties for…
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We report strong third-harmonic generation (THG) in monolayer graphene grown by chemical vapor deposition (CVD) and transferred to an amorphous silica (glass) substrate; the photon energy is in three-photon resonance with the exciton-shifted van Hove singularity at the M-point of graphene. Our polarization- and azimuthal-rotation-dependent measurements confirm the expected symmetry properties for this nonlinear process. Since the third-harmonic signal exceeds that of bulk glass by more than two orders of magnitude, the signal contrast permits background-free scanning of graphene and provides insight into the structural properties of graphene.
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Submitted 9 January, 2013; v1 submitted 8 January, 2013;
originally announced January 2013.
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Trap** Surface Electrons on Graphene Layers and Islands
Authors:
D. Niesner,
Th. Fauster,
J. I. Dadap,
N. Zaki,
K. R. Knox,
P. -C. Yeh,
R. Bhandari,
R. M. Osgood,
M. Petrović,
M. Kralj
Abstract:
We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type sur…
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We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy, dispersion, and lifetime of the lowest three image-potential states are measured. In addition, the weak interaction between Ir and graphene permits observation of resonant transitions from an unquenched Shockley-type surface state of the Ir substrate to graphene/Ir image-potential states. The image-potential-state lifetimes are comparable to those of mid-gap clean metal surfaces. Evidence of localization of the excited electrons on single-atom-layer graphene islands is provided by coverage-dependent measurements.
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Submitted 29 December, 2011; v1 submitted 9 September, 2011;
originally announced September 2011.
