Showing 1–15 of 15 results for author: Débarre, D

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

Authors: Y. Baron, J. L. Lábár, S. Lequien, B. Pécz, R. Daubriac, S. Kerdilés, P. Acosta ALba, C. Marcenat, D. Débarre, F. Lefloch, F. Chiodi

Abstract: We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped supe… ▽ More We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped superconducting Si at large scale. In particular, we highlight the effect of the nanosecond laser annealing energy and the impact of multiple laser anneals. Increasing the energy leads to a linear increase of the layer thickness, and to the increase of the superconducting critical temperature $T_c$ from zero ($<35\, mK$) to $0.5\,K$. This value is comparable to superconducting Si layers realised by Gas Immersion Laser Do** where the dopants are incorporated without introducing the deep defects associated to implantation. Superconductivity only appears when the annealed depth is larger than the initial amorphous layer induced by the boron implantation. The number of subsequent anneals results in a more homogeneous do** with reduced amount of structural defects and increased conductivity. The quantitative analysis of $T_c$ concludes on a superconducting/ non superconducting bilayer, with an extremely low resistance interface. This highlights the possibility to couple efficiently superconducting Si to Si channels. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Tuning superconductivity in nanosecond laser annealed boron doped $Si_{1-x}Ge_{x}$ epilayers

Authors: S. Nath, I. Turan, L. Desvignes, L. Largeau, O. Mauguin, M. Túnica, M. Amato, C. Renard, G. Hallais, D. Débarre, F. Chiodi

Abstract: Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser ann… ▽ More Superconductivity in ultra-doped $Si_{1-x}Ge_{x}:B$ epilayers is demonstrated by nanosecond laser do**, which allows introducing substitutional B concentrations well above the solubility limit and up to $7\,at.\%$. A Ge fraction $x$ ranging from 0 to 0.21 is incorporated in $Si:B$ : 1) through a precursor gas by Gas Immersion Laser Do**; 2) by ion implantation, followed by nanosecond laser annealing; 3) by UHV-CVD growth of a thin Ge layer, followed by nanosecond laser annealing. The 30 nm and 80 nm thick $Si_{1-x}Ge_{x}:B$ epilayers display superconducting critical temperatures $T_c$ tuned by B and Ge between 0 and 0.6 K. Within BCS weak-coupling theory, $T_c$ evolves exponentially with both the density of states and the electron-phonon potential. While B do** affects both, through the increase of the carrier density and the tensile strain, Ge incorporation allows addressing independently the lattice deformation influence on superconductivity. To estimate the lattice parameter modulation with B and Ge, Vegard's law is validated for the ternary $SiGeB$ bulk alloy by Density Functional Theory calculations. Its validity is furthermore confirmed experimentally by X-Ray Diffraction. We highlight a global linear dependence of $T_c$ vs. lattice parameter, common for both $Si:B$ and $Si_{1-x}Ge_{x}:B$, with $δT_c/T_c \sim 50\,\%$ for $δa/a \sim 1\,\%$. △ Less

Submitted 3 April, 2024; originally announced April 2024.

STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si$_{1-x}$ B$_x$

Authors: G. Hallais, G. Patriarche, L. Desvignes, D. Débarre, F. Chiodi

Abstract: We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser do**. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses and Hall measurements. When increasing the active B concentration above 4.3 at.%, the… ▽ More We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser do**. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses and Hall measurements. When increasing the active B concentration above 4.3 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. When increasing B incorporation, we increasingly observe small precipitates, filaments with higher active B concentration and stacking faults. At the highest concentrations studied, large precipitates form, related to the decrease of active B concentration. The structural deformation, defect type and concentration, and active B distribution are connected to the initial increase and subsequent gradual loss of superconductivity. △ Less

Submitted 30 September, 2022; v1 submitted 9 August, 2022; originally announced August 2022.

Evidence of boron pairs in highly boron laser doped silicon

Authors: Léonard Desvignes, Francesca Chiodi, Géraldine Hallais, Dominique Débarre, Giacomo Priante, Feng Liao, Guilhem Pacot, Bernard Sermage

Abstract: Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron do** was made by saturating the chemisorption sites of a Si wafer with BCl3, followed by nanosecond laser anneal (Gas Immersion Laser Do**). The boron concentration varies thus nearly linearly with the number of process repetitio… ▽ More Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron do** was made by saturating the chemisorption sites of a Si wafer with BCl3, followed by nanosecond laser anneal (Gas Immersion Laser Do**). The boron concentration varies thus nearly linearly with the number of process repetitions. However, it is not the case for the hole concentration which tends to saturate at high boron concentration. The difference between boron and hole concentration increases as the square of boron concentration, pointing towards the formation of boron pairs as the dominant contribution to the increase of inactive boron. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Strongly non-linear superconducting silicon resonators

Authors: P. Bonnet, F. Chiodi, D. Flanigan, R. Delagrange, N. Brochu, D. Débarre, H. le Sueur

Abstract: Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with low losses at microwave frequencies. Here, we study experimentally the electrodynamics of superconducting silicon thin layers patterned in coplanar waveguide res… ▽ More Superconducting boron doped silicon is a promising material for integrated silicon quantum devices. In particular, its low electronic density and moderate disorder make it a suitable candidate for the fabrication of large inductances with low losses at microwave frequencies. Here, we study experimentally the electrodynamics of superconducting silicon thin layers patterned in coplanar waveguide resonators, targeting three key properties: kinetic inductance, internal losses, and the variation of these quantities with the read-out power. We report the first observation in a doped semiconductor of microwave resonances with internal quality factors of a few thousand. As expected in the BCS framework, superconducting silicon presents a large sheet kinetic inductance, in the 50-500 pH range comparable to strongly disordered superconductors, whose temperature dependence is well described by Mattis-Bardeen theory. We find, though, an unexpectedly strong non-linearity of the complex surface impedance which cannot be explained either as a non-linearity induced by depairing or as quasiparticle heating. △ Less

Submitted 24 June, 2021; v1 submitted 26 January, 2021; originally announced January 2021.

A method to quantify molecular diffusion within thin solvated polymer films: A case study on films of natively unfolded nucleoporins

Authors: Rickard Frost, Delphine Débarre, Saikat Jana, Fouzia Bano, Jürgen Schünemann, Dirk Görlich, Ralf P. Richter

Abstract: We present a method to probe molecular and nanoparticle diffusion within thin, solvated polymer coatings. The device exploits the confinement with well-defined geometry that forms at the interface between a planar and a hemi-spherical surface (of which at least one is coated with polymers) in close contact, and uses this confinement to analyse diffusion processes without interference of exchange w… ▽ More We present a method to probe molecular and nanoparticle diffusion within thin, solvated polymer coatings. The device exploits the confinement with well-defined geometry that forms at the interface between a planar and a hemi-spherical surface (of which at least one is coated with polymers) in close contact, and uses this confinement to analyse diffusion processes without interference of exchange with and diffusion in the bulk solution. With this method, which we call plane-sphere confinement microscopy (PSCM), information regarding the partitioning of molecules between the polymer coating and the bulk liquid is also obtained. Thanks to the shape of the confined geometry, diffusion and partitioning can be mapped as a function of compression and concentration of the coating in a single experiment. The method is versatile and can be integrated with conventional optical microscopes, and thus should find widespread use in the many application areas exploiting functional polymer coatings. We demonstrate the use of PSCM using brushes of natively unfolded nucleoporin domains rich in phenylalanine-glycine repeats (FG domains). A meshwork of FG domains is known to be responsible for the selective transport of nuclear transport receptors (NTR) and their macromolecular cargos across the nuclear envelope that separates the cytosol and the nucleus of living cells. We find that the selectivity of NTR uptake by FG domain films depends sensitively on FG domain concentration, and that the interaction of NTRs with FG domains obstructs NTR movement only moderately. These observations contribute important information to better understand the mechanisms of selective NTR transport. △ Less

Submitted 4 June, 2020; v1 submitted 6 April, 2020; originally announced April 2020.

Comments: 27 pages and 6 figures of main text, 12 pages and 8 figures of supporting information

Elastohydrodynamic lift at a soft wall

Authors: Heather Davies, Delphine Débarre, Nouha El Amri, Claude Verdier, Ralf P Richter, Lionel Bureau

Abstract: We study experimentally the motion of non-deformable microbeads in a linear shear flow close to a wall bearing a thin and soft polymer layer. Combining microfluidics and 3D optical tracking, we demonstrate that the steady-state bead/surface distance increases with the flow strength. Moreover, such lift is shown to result from flow-induced deformations of the layer, in quantitative agreement with t… ▽ More We study experimentally the motion of non-deformable microbeads in a linear shear flow close to a wall bearing a thin and soft polymer layer. Combining microfluidics and 3D optical tracking, we demonstrate that the steady-state bead/surface distance increases with the flow strength. Moreover, such lift is shown to result from flow-induced deformations of the layer, in quantitative agreement with theoretical predictions from elastohydrodynamics. This study thus provides the first experimental evidence of "soft lubrication" at play at small scale, in a system relevant {\it e.g.} to the physics of blood microcirculation. △ Less

Submitted 5 March, 2018; v1 submitted 30 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Lett. 120, 198001 (2018)

Room temperature magneto-optic effect in silicon light-emitting diodes

Authors: F. Chiodi, S. L. Bayliss, L. Barast, D. Débarre, H. Bouchiat, R. H. Friend, A. D. Chepelianskii

Abstract: In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging due to the inefficiency of emission due to silicon's indirect band-ga… ▽ More In weakly spin-orbit coupled materials, the spin-selective nature of recombination can give rise to large magnetic-field effects, for example on electro-luminescence from molecular semiconductors. While silicon has weak spin-orbit coupling, observing spin-dependent recombination through magneto-electroluminescence is challenging due to the inefficiency of emission due to silicon's indirect band-gap, and to the difficulty in separating spin-dependent phenomena from classical magneto-resistance effects. Here we overcome these challenges to measure magneto-electroluminescence in silicon light-emitting diodes fabricated via gas immersion laser do**. These devices allow us to achieve efficient emission while retaining a well-defined geometry thus suppressing classical magnetoresistance effects to a few percent. We find that electroluminescence can be enhanced by up to 300\% near room temperature in a seven Tesla magnetic field showing that the control of the spin degree of freedom can have a strong impact on the efficiency of silicon LEDs. △ Less

Submitted 7 November, 2017; originally announced November 2017.

All silicon Josephson junctions

Authors: F. Chiodi, J. -E. Duvauchelle, C. Marcenat, D. Débarre, F. Lefloch

Abstract: We have realised laser-doped all-silicon superconducting (S)/ normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser do** profile. We extracted the interface resistance by fitt… ▽ More We have realised laser-doped all-silicon superconducting (S)/ normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser do** profile. We extracted the interface resistance by fitting with the linearised Usadel equations, demonstrating a reduction of one order of magnitude from previous superconductor/doped Si interfaces. In this well controlled crystalline system we exploited the low resistance S/N interfaces to elaborate all-silicon lateral SNS Josephson junctions with long range proximity effect. Their dc transport properties, such as the critical and retrap** currents, could be well understood in the diffusive regime. Furthermore, this work lead to the estimation of important parameters in ultra-doped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive an all-silicon superconducting electronics. △ Less

Submitted 26 October, 2016; originally announced October 2016.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 96, 024503 (2017)

The conformation of thermoresponsive polymer brushes probed by optical reflectivity

Authors: Siddhartha Varma, Lionel Bureau, Delphine Débarre

Abstract: We describe a microscope-based optical setup that allows us to perform space-and time-resolved measurements of the spectral reflectance of transparent substrates coated with ultrathin films. This technique is applied to investigate the behavior in water of thermosensitive polymer brushes made of poly(N-isopropylacrylamide) grafted on glass. We show that spectral reflectance measurements yield quan… ▽ More We describe a microscope-based optical setup that allows us to perform space-and time-resolved measurements of the spectral reflectance of transparent substrates coated with ultrathin films. This technique is applied to investigate the behavior in water of thermosensitive polymer brushes made of poly(N-isopropylacrylamide) grafted on glass. We show that spectral reflectance measurements yield quantitative information about the conformation and axial structure of the brushes as a function of temperature. We study how molecular parameters (grafting density, chain length) affect the hydra-tion state of a brush, and provide one of the few experimental evidence for the occurrence of vertical phase separation in the vicinity of the lower critical solution temperature of the polymer. The origin of the hysteretic behavior of poly(N-isopropylacrylamide) brushes upon cycling the temperature is also clarified. We thus demonstrate that our optical technique allows for in-depth characterization of stimuli-responsive polymer layers, which is crucial for the rational design of smart polymer coatings in actuation, gating or sensing applications. △ Less

Submitted 24 March, 2016; v1 submitted 23 November, 2015; originally announced November 2015.

Comments: Revised version. To appear in Langmuir (in press)

Silicon Superconducting Quantum Interference Device

Authors: Jean-Eudes Duvauchelle, Anaïs Francheteau, Christophe Marcenat, Francesca Chiodi, Dominique Débarre, Klaus Hasselbach, John R. Kirtley, François Lefloch

Abstract: We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily do** a silicon wafer with boron atoms using the Gas Immersion Laser Do** (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperat… ▽ More We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily do** a silicon wafer with boron atoms using the Gas Immersion Laser Do** (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations. △ Less

Submitted 17 August, 2015; originally announced August 2015.

Comments: Published in Applied Physics Letters (August 2015)

Journal ref: Appl. Phys. Lett. 107, 072601 (2015)

Laser do** for ohmic contacts in n-type Ge

Authors: F. Chiodi, A. D. Chepelianskii, C. Gardes, G. Hallais, D. Bouchier, D. Débarre

Abstract: We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser do** technique used, Gas Immersion Laser Do**, we could attain extremely large do** levels above the solubility limit, and thus reduce the metal/doped Ge contact resistance. We tested independently the influen… ▽ More We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser do** technique used, Gas Immersion Laser Do**, we could attain extremely large do** levels above the solubility limit, and thus reduce the metal/doped Ge contact resistance. We tested independently the influence of the do** concentration and doped layer thickness, and showed that the ohmic contact improves when increasing the do** level and is not affected when changing the doped thickness. Furthermore, we characterised the doped Ge/Ge contact, showing that at high do** its contact resistance is the dominant contribution to the total contact resistance. △ Less

Submitted 16 November, 2014; originally announced November 2014.

Comments: 4 pages, 3 figures

Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography

Authors: K. Hoummada, F. Dahlem, T. Kociniewski, J. Boulmer, C. Dubois, G. Prudon, E. Bustarret, H. Courtois, D. Debarre, D. Mangelinck

Abstract: Superconducting boron-doped silicon films prepared by gas immersion laser do** (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. Th… ▽ More Superconducting boron-doped silicon films prepared by gas immersion laser do** (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. The boron spatial distribution is found to be compatible with local density of states measurements performed by scanning tunneling spectroscopy. These results, combined with the observations of very low impurity level and of a sharp two-dimensional interface between doped and undoped regions show, that the Si:B material obtained by GILD is a well-defined random substitutional alloy endowed with promising superconducting properties. △ Less

Submitted 6 November, 2012; v1 submitted 22 March, 2011; originally announced March 2011.

Comments: 4 pages

Journal ref: Appl. Phys. Lett. 101, 182602 (2012)

Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers

Authors: F. Dahlem, T. Kociniewski, C. Marcenat, A. Grockowiak, L. Pascal, P. Achatz, J. Boulmer, D. Debarre, T. Klein, E. Bustarret, H. Courtois

Abstract: Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a homogeneous superconductor, with an energy gap dispersion below +/- 10%. The spectral shape, the amplitude and temperature dependence of the superconductivity gap… ▽ More Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a homogeneous superconductor, with an energy gap dispersion below +/- 10%. The spectral shape, the amplitude and temperature dependence of the superconductivity gap follow the BCS model, bringing further support to the hypothesis of a hole pairing mechanism mediated by phonons in the weak coupling limit. △ Less

Submitted 6 November, 2012; v1 submitted 21 July, 2010; originally announced July 2010.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 82, 140505(R) (2010)

Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

Authors: C. Marcenat, J. Kacmarcik, R. Piquerel, P. Achatz, G. Prudon, C. Dubois, B. Gautier, J. C. Dupuy, E. Bustarret, L. Ortega, T. Klein, J. Boulmer, T. Kociniewski, D. Debarre

Abstract: We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Do**. The do** concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for do** level below 2.5 at.%. The critical temperature Tc then increased… ▽ More We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Do**. The do** concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for do** level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. in Nature (London) 444, 465 (2006). △ Less

Submitted 2 December, 2009; v1 submitted 28 October, 2009; originally announced October 2009.

Comments: 4 pages including 4 figures, submitted to PRB-Rapid Communication