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Development of an integrated device based on the gain/phase detector and Arduino platform for measuring magnetoelastic resonance
Authors:
Wenderson R. F. Silva,
Rafael O. R. R. Cunha,
Joaquim B. S. Mendes
Abstract:
This study presents the development of an integrated device for measuring magnetoelastic resonance, utilizing a gain/phase detector and the Arduino platform. The device stands out for its simplicity, low cost, and efficiency. It employs the Arduino's ATmega328P microcontroller, coupled with the AD8302, and an intuitive graphical interface developed in Python, which facilitates the measurement of m…
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This study presents the development of an integrated device for measuring magnetoelastic resonance, utilizing a gain/phase detector and the Arduino platform. The device stands out for its simplicity, low cost, and efficiency. It employs the Arduino's ATmega328P microcontroller, coupled with the AD8302, and an intuitive graphical interface developed in Python, which facilitates the measurement of magnetoelastic signals in sensors. The device's validation is carried out through measurements of mass deposits on magnetoelastic sensors, confirming its accuracy and functionality. This advancement offers a practical and portable solution for detecting magnetoelastic resonances, promoting the use of these technologies in field environments and in diverse scientific applications. The integration of components into a compact, robust, and low-cost electronic circuit, along with an easy-to-operate graphical interface, significantly simplifies the complexity of the components, making the equipment complete and readily operational.
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Submitted 27 June, 2024;
originally announced June 2024.
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Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature
Authors:
Rafael O. Cunha,
Yunier Garcia-Basabe,
Dunieskys G. Larrude,
Matheus Gamino,
Erika N. Lima,
Felipe Crasto de Lima,
Adalberto Fazzio,
Sergio M. Rezende,
Antonio Azevedo,
Joaquim B. S. Mendes
Abstract:
We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pum**…
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We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pum** process. The observed spin-to-charge current conversion in the heterostructure is attributed to inverse Rashba-Edelstein effect (IREE) at the graphene/WS$_2$ interface. Interfacial CT dynamics in this heterostructure was investigated based on the framework of core-hole-clock (CHC) approach. The results obtained from spin pum** and CHC studies show that the spin-to-charge current conversion and charge transfer process are more efficient in the graphene/WS$_2$ heterostructure compared to isolated WS2 and graphene films. The results show that the presence of WS$_2$ flakes improves the current conversion efficiency. These experimental results are corroborated by density functional theory (DFT) calculations, which reveal (i) Rashba spin-orbit splitting of graphene orbitals and (ii) electronic coupling between graphene and WS$_2$ orbitals. This study provides valuable insights for optimizing the design and performance of spintronic devices.
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Submitted 28 May, 2024;
originally announced May 2024.
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Bulk and Interface Effects Based on Rashba-Like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices
Authors:
Eduardo S. Santos,
José E. Abrão,
Jefferson L. Costa,
João G. S. Santos,
Kacio R. Mello,
Andriele S. Vieira,
Tulio C. R. Rocha,
Thiago J. A. Mori,
Rafael O. Cunha,
Joaquim B. S. Mendes,
Antonio Azevedo
Abstract:
In this work, employing spin-pum** techniques driven by both ferromagnetic resonance (SP-FMR) and longitudinal spin Seebeck effect (LSSE) to manipulate and direct observe orbital currents, we investigated the volume conversion of spin-orbital currents into charge-current in YIG(100nm)/Pt(2nm)/NM2 structures, where NM2 represents Ti or Ru. While the YIG/Ti bilayer displayed a negligible SP-FMR si…
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In this work, employing spin-pum** techniques driven by both ferromagnetic resonance (SP-FMR) and longitudinal spin Seebeck effect (LSSE) to manipulate and direct observe orbital currents, we investigated the volume conversion of spin-orbital currents into charge-current in YIG(100nm)/Pt(2nm)/NM2 structures, where NM2 represents Ti or Ru. While the YIG/Ti bilayer displayed a negligible SP-FMR signal, the YIG/Pt/Ti structure exhibited a significantly stronger signal attributed to the orbital Hall effect of Ti. Substituting the Ti layer with Ru revealed a similar phenomenon, wherein the effect is ascribed to the combined action of both spin and orbital Hall effects. Furthermore, we measured the SP-FMR signal in the YIG/Pt(2)/Ru(6)/Ti(6) and YIG/Pt(2)/Ti(6)/Ru(6) heterostructures by just altering the stack order of Ti and Ru layers, where the peak value of the spin pum** signal is larger for the first sample. To verify the influence on the oxidation of Ti and Ru films, we studied a series of thin films subjected to controlled and natural oxidation. As Cu and CuOx is a system that is already known to be highly influenced by oxidation, this metal was chosen to carry out this study. We investigated these samples using SP-FMR in YIG/Pt(2)/CuOx(tCu) and X-ray absorption spectroscopy and concluded that samples with natural oxidation of Cu exhibit more significant results than those when the CuOx is obtained by reactive sputtering. In particular, samples where the Cu layer is naturally oxidized exhibit a Cu2O-rich phase. Our findings help to elucidate the mechanisms underlying the inverse orbital Hall and inverse orbital Rashba-Edelstein-like effects. These insights indeed contribute to the advancement of devices that rely on orbital-charge conversion.
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Submitted 24 April, 2024; v1 submitted 31 January, 2024;
originally announced February 2024.
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Efficient spin-to-charge interconversion in Weyl semimetal TaP at room temperature
Authors:
J. B. S. Mendes,
R. O. Cunha,
S. O. Ferreira,
R. D. dos Reis,
M. Schmidt,
M. Nicklas,
S. M. Rezende,
A. Azevedo
Abstract:
In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy $(Py=Ni_{81}Fe_{19})$. The spin currents are generated in the Py layer by the spin pum** effect (SPE) from microwave-driven ferromagnetic resonance and are detect…
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In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy $(Py=Ni_{81}Fe_{19})$. The spin currents are generated in the Py layer by the spin pum** effect (SPE) from microwave-driven ferromagnetic resonance and are detected by a dc voltage along the TaP crystal, at room temperature. We observe a field-symmetric voltage signal without the contamination of asymmetrical lines due to spin rectification effects observed in studies using metallic ferromagnets. The observed voltage is attributed to spin-to-charge current conversion based on the IREE, made possible by the spin-orbit coupling induced intrinsically by the bulk band structure of Weyl semimetals. The measured IREE coefficient $λ_{IREE}=(0.30 \pm{0.01})$ nm is two orders of magnitude larger than in graphene and is comparable to or larger than the values reported for some metallic interfaces and for several topological insulators.
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Submitted 10 August, 2022;
originally announced August 2022.
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Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$
Authors:
J. B. S. Mendes,
M. Gamino,
R. O. Cunha,
J. E. Abrão,
S. M. Rezende,
A. Azevedo
Abstract:
We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the $Bi_{2}Se_{3}$ layer by means of the spin pum** process in which the spin precession is obtained by…
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We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the $Bi_{2}Se_{3}$ layer by means of the spin pum** process in which the spin precession is obtained by exciting the ferromagnetic resonance of the ferromagnetic film. The spin-current to charge-current conversion, occurring at the $Bi_{2}Se_{3}/$ferromagnet interface, was attribute to the inverse Rashba-Edelstein effect (IREE). By analyzing the data as a function of the $Bi_{2}Se_{3}$ thickness we calculated the IREE length used to characterize the efficiency of the conversion process and found that 1.2 pm $\leq|λ_{IREE}|\leq$ 2.2 pm. These results support the fact that the surface states of $Bi_{2}Se_{3}$ have a dominant role in the spin-charge conversion process, and the mechanism based on the spin diffusion process plays a secondary role. We also discovered that the spin- to charge-current mechanism in $Bi_{2}Se_{3}$ has the same polarity as the one in Ta, which is the opposite to the one in Pt. The combination of the magnetic properties of YIG and Py, with strong spin-orbit coupling and dissipationless surface states topologically protected of $Bi_{2}Se_{3}$ might lead to spintronic devices with fast and efficient spin-charge conversion.
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Submitted 28 August, 2020;
originally announced August 2020.
