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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
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We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
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Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
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Transparent Gatable Superconducting Shadow Junctions
Authors:
Sabbir A. Khan,
Charalampos Lampadaris,
Ajuan Cui,
Lukas Stampfer,
Yu Liu,
S. J. Pauka,
Martin E. Cachaza,
Elisabetta M. Fiordaliso,
Jung-Hyun Kang,
Svetlana Korneychuk,
Timo Mutas,
Joachim E. Sestoft,
Filip Krizek,
Rawa Tanta,
M. C. Cassidy,
Thomas S. Jespersen,
Peter Krogstrup
Abstract:
Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single crystalline InAs, InSb and…
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Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single crystalline InAs, InSb and $\mathrm{InAs_{1-x}Sb_x}$ nanowires with epitaxial superconductors and in-situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in-situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high $I_\mathrm{C} R_\mathrm{N}$, close to the KO$-$2 limit. This study demonstrates a promising engineering path towards reliable gate-tunable superconducting qubits.
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Submitted 9 March, 2020;
originally announced March 2020.
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A Training effect on electrical properties in nanoscale BiFeO$_3$
Authors:
Sudipta Goswami,
Dipten Bhattacharya,
Wuxia Li,
Ajuan Cui,
QianQing Jiang,
Chang-zhi Gu
Abstract:
We report our observation of the training effect on dc electrical properties in a nanochain of BiFeO$_3$ as a result of large scale migration of defects under combined influence of electric field and Joule heating. We show that an optimum number of cycles of electric field within the range zero to $\sim$1.0 MV/cm across a temperature range 80-300 K helps in reaching the stable state via a glass-tr…
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We report our observation of the training effect on dc electrical properties in a nanochain of BiFeO$_3$ as a result of large scale migration of defects under combined influence of electric field and Joule heating. We show that an optimum number of cycles of electric field within the range zero to $\sim$1.0 MV/cm across a temperature range 80-300 K helps in reaching the stable state via a glass-transition-like process in the defect structure. Further treatment does not give rise to any substantial modification. We conclude that such a training effect is ubiquitous in pristine nanowires or chains of oxides and needs to be addressed for applications in nanoelectronic devices.
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Submitted 8 April, 2013;
originally announced April 2013.
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Slow dynamics of Zero Range Process in the Framework of Traps Model
Authors:
Kai Qi,
Ming Tang,
Aixiang Cui,
Yan Fu
Abstract:
The relaxation dynamics of zero range process (ZRP) has always been an interesting problem. In this study, we set up the relationship between ZRP and traps model, and investigate the slow dynamics of ZRP in the framework of traps model. Through statistical quantities such as the average rest time, the particle distribution, the two-time correlation function and the average escape time, we find tha…
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The relaxation dynamics of zero range process (ZRP) has always been an interesting problem. In this study, we set up the relationship between ZRP and traps model, and investigate the slow dynamics of ZRP in the framework of traps model. Through statistical quantities such as the average rest time, the particle distribution, the two-time correlation function and the average escape time, we find that the particle interaction, especially the resulted condensation, can significantly influence the dynamics. In the stationary state, both the average rest time and the average escape time caused by the attraction among particles are obtained analytically. In the transient state, a hierarchical nature of the aging dynamics is revealed by both simulations and scaling analysis. Moreover, by comparing the particle diffusion in both the transient state and the stationary state, we find that the closer ZRP systems approach the stationary state, the more slowly particles diffuse.
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Submitted 3 April, 2012;
originally announced April 2012.
