Showing 1–5 of 5 results for author: Croot, X G

Long-Range Microwave Mediated Interactions Between Electron Spins

Authors: F. Borjans, X. G. Croot, X. Mi, M. J. Gullans, J. R. Petta

Abstract: Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin intera… ▽ More Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin interactions between two electrons that are physically separated by more than 4 mm. Coherent spin-photon coupling is demonstrated for each individual spin using microwave transmission spectroscopy. An enhanced vacuum Rabi splitting is observed when both spins are tuned into resonance with the cavity, indicative of a coherent spin-spin interaction. Our results demonstrate that microwave-frequency photons can be used as a resource to generate long-range two-qubit gates between spatially separated spins. △ Less

Submitted 2 May, 2019; originally announced May 2019.

Journal ref: Nature 577, 195 (2020)

Device Architecture for Coupling Spin Qubits Via an Intermediate Quantum State

Authors: X. G. Croot, S. J. Pauka, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra, D. J. Reilly

Abstract: We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on… ▽ More We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on indirect exchange, the architecture permits precise control over tunnel rates between the singlet-triplet qubits and the intermediate state. We show that by separating qubits by 1 um, the residual capacitive coupling between them is reduced to 7 ueV. △ Less

Submitted 20 July, 2017; originally announced July 2017.

Journal ref: Phys. Rev. Applied 10, 044058 (2018)

Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment

Authors: X. G. Croot, S. J. Pauka, H. Lu, A. C. Gossard, J. D. Watson, G. C. Gardner, S. Fallahi, M. J. Manfra, D. J. Reilly

Abstract: We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and… ▽ More We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. Applied 11, 064027 (2019)

Frequency Multiplexing for Readout of Spin Qubits

Authors: J. M. Hornibrook, J. I. Colless, A. C. Mahoney, X. G. Croot, S. Blanvillain, H. Lu, A. C. Gossard, D. J. Reilly

Abstract: We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum… ▽ More We demonstrate a low loss, chip-level frequency multiplexing scheme for readout of scaled-up spin qubit devices. By integrating separate bias tees and resonator circuits on-chip for each readout channel, we realize dispersive gate-sensing in combination with charge detection based on two rf quantum point contacts (rf-QPCs). We apply this approach to perform multiplexed readout of a double quantum dot in the few-electron regime, and further demonstrate operation of a 10-channel multiplexing device. Limitations for scaling spin qubit readout to large numbers of multiplexed channels is discussed. △ Less

Submitted 18 December, 2013; originally announced December 2013.

Journal ref: Applied Physics Letters 104, 103108, (2014)

Stimulated Phonon Emission in a Driven Double Quantum Dot

Authors: J. I. Colless, X. G. Croot, T. M. Stace, A. C. Doherty, S. D. Barrett, H. Lu, A. C. Gossard, D. J. Reilly

Abstract: The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential… ▽ More The compound semiconductor gallium arsenide (GaAs) provides an ultra-clean platform for storing and manipulating quantum information, encoded in the charge or spin states of electrons confined in nanostructures. The absence of inversion symmetry in the zinc-blende crystal structure of GaAs however, results in strong piezoelectric coupling between lattice acoustic phonons and electrons, a potential hindrance for quantum computing architectures that can be charge-sensitive during certain operations. Here we examine phonon generation in a GaAs double dot, configured as a single- or two-electron charge qubit, and driven by the application of microwaves via surface gates. In a process that is a microwave analog of the Raman effect, stimulated phonon emission is shown to produce population inversion of a two-level system and provides spectroscopic signatures of the phononic environment created by the nanoscale device geometry. △ Less

Submitted 25 May, 2013; originally announced May 2013.

Comments: Send to: [email protected]

Journal ref: Nature communications 5, 3716 (2014)