Magnetic Fluctuations in Niobium Pentoxide
Authors:
Y. Krasnikova,
A. A. Murthy,
F. Crisa,
M. Bal,
Z. Sung,
J. Lee,
A. Cano,
D. M. T. van Zanten,
A. Romanenko,
A. Grassellino,
A. Suter,
T. Prokscha,
Z. Salman
Abstract:
Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Kubo-Toyabe model considering a time-dependent local magnetic field. We state that observed fluctuations result from the correlated motion of electron s…
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Using a spin-polarized muon beam we were able to capture magnetic dynamics in an amorphous niobium pentoxide thin film. Muons are used to probe internal magnetic fields produced by defects. Magnetic fluctuations could be described by the dynamical Kubo-Toyabe model considering a time-dependent local magnetic field. We state that observed fluctuations result from the correlated motion of electron spins. We expect that oxygen vacancies play a significant role in these films and lead to a complex magnetic field distribution which is non-stationary. The characteristic average rate of magnetic field change is on the order of 100~MHz. The observed dynamics may provide insight into potential noise sources in Nb-based superconducting devices, while also highlighting the limitations imposed by amorphous oxides.
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Submitted 17 December, 2023;
originally announced December 2023.
Systematic Improvements in Transmon Qubit Coherence Enabled by Niobium Surface Encapsulation
Authors:
Mustafa Bal,
Akshay A. Murthy,
Shaojiang Zhu,
Francesco Crisa,
Xinyuan You,
Ziwen Huang,
Tanay Roy,
Jaeyel Lee,
David van Zanten,
Roman Pilipenko,
Ivan Nekrashevich,
Andrei Lunin,
Daniel Bafia,
Yulia Krasnikova,
Cameron J. Kopas,
Ella O. Lachman,
Duncan Miller,
Josh Y. Mutus,
Matthew J. Reagor,
Hilal Cansizoglu,
Jayss Marshall,
David P. Pappas,
Kim Vu,
Kameshwar Yadavalli,
**-Su Oh
, et al. (15 additional authors not shown)
Abstract:
We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigati…
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We present a novel transmon qubit fabrication technique that yields systematic improvements in T$_1$ relaxation times. We fabricate devices using an encapsulation strategy that involves passivating the surface of niobium and thereby preventing the formation of its lossy surface oxide. By maintaining the same superconducting metal and only varying the surface structure, this comparative investigation examining different cap** materials, such as tantalum, aluminum, titanium nitride, and gold, and film substrates across different qubit foundries definitively demonstrates the detrimental impact that niobium oxides have on the coherence times of superconducting qubits, compared to native oxides of tantalum, aluminum or titanium nitride. Our surface-encapsulated niobium qubit devices exhibit T$_1$ relaxation times 2 to 5 times longer than baseline niobium qubit devices with native niobium oxides. When cap** niobium with tantalum, we obtain median qubit lifetimes above 300 microseconds, with maximum values up to 600 microseconds, that represent the highest lifetimes to date for superconducting qubits prepared on both sapphire and silicon. Our comparative structural and chemical analysis suggests why amorphous niobium oxides may induce higher losses compared to other amorphous oxides. These results are in line with high-accuracy measurements of the niobium oxide loss tangent obtained with ultra-high Q superconducting radiofrequency (SRF) cavities. This new surface encapsulation strategy enables even further reduction of dielectric losses via passivation with ambient-stable materials, while preserving fabrication and scalable manufacturability thanks to the compatibility with silicon processes.
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Submitted 24 January, 2024; v1 submitted 25 April, 2023;
originally announced April 2023.
Electrostatic field-driven supercurrent suppression in ionic-gated metallic Josephson nanotransistors
Authors:
Federico Paolucci,
Francesco Crisà ,
Giorgio De Simoni,
Lennart Bours,
Claudio Puglia,
Elia Strambini,
Stefano Roddaro,
Francesco Giazotto
Abstract:
Recent experiments have shown the possibility to tune the electron transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between intense electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: unconventional electric field-effect or qu…
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Recent experiments have shown the possibility to tune the electron transport properties of metallic nanosized superconductors through a gate voltage. These results renewed the longstanding debate on the interaction between intense electrostatic fields and superconductivity. Indeed, different works suggested competing mechanisms as the cause of the effect: unconventional electric field-effect or quasiparticle injection. By realizing ionic-gated Josephson field-effect nanotransistors (IJoFETs), we provide the conclusive evidence of electrostatic field-driven control of the supercurrent in metallic nanosized superconductors. Our Nb IJoFETs show bipolar giant suppression of the superconducting critical current up to $\sim45\%$ with negligible variation of both the critical temperature and the normal-state resistance, in a setup where both overheating and charge injection are impossible. The microscopic explanation of these results calls upon a novel theory able to describe the non-trivial interaction of static electric fields with conventional superconductivity.
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Submitted 5 July, 2021; v1 submitted 2 July, 2021;
originally announced July 2021.
