Showing 1–7 of 7 results for author: Cothrine, M

Superconductivity in twisted bilayer WSe$_2$

Authors: Yinjie Guo, Jordan Pack, Joshua Swann, Luke Holtzman, Matthew Cothrine, Kenji Watanabe, Takashi Taniguchi, David Mandrus, Katayun Barmak, James Hone, Andrew J. Millis, Abhay N. Pasupathy, Cory R. Dean

Abstract: The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other… ▽ More The discovery of superconductivity in twisted bilayer and twisted trilayer graphene has generated tremendous interest. The key feature of these systems is an interplay between interlayer coupling and a moiré superlattice that gives rise to low-energy flat bands with strong correlations. Flat bands can also be induced by moiré patterns in lattice-mismatched and or twisted heterostructures of other two-dimensional materials such as transition metal dichalcogenides (TMDs). Although a wide range of correlated phenomenon have indeed been observed in the moiré TMDs, robust demonstration of superconductivity has remained absent. Here we report superconductivity in 5 degree twisted bilayer WSe$_2$ (tWSe$_2$) with a maximum critical temperature of 426 mK. The superconducting state appears in a limited region of displacement field and density that is adjacent to a metallic state with Fermi surface reconstruction believed to arise from antiferromagnetic order. A sharp boundary is observed between the superconducting and magnetic phases at low temperature, reminiscent of spin-fluctuation mediated superconductivity. Our results establish that moiré flat-band superconductivity extends beyond graphene structures. Material properties that are absent in graphene but intrinsic among the TMDs such as a native band gap, large spin-orbit coupling, spin-valley locking, and magnetism offer the possibility to access a broader superconducting parameter space than graphene-only structures. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Authors: Jordan Pack, Yinjie Guo, Ziyu Liu, Bjarke S. Jessen, Luke Holtzman, Song Liu, Matthew Cothrine, Kenji Watanabe, Takashi Taniguchi, David G. Mandrus, Katayun Barmak, James Hone, Cory R. Dean

Abstract: Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconducto… ▽ More Two-dimensional (2D) semiconductors, such as the transition metal dichalcogenides, have demonstrated tremendous promise for the development of highly tunable quantum devices. Realizing this potential requires low-resistance electrical contacts that perform well at low temperatures and low densities where quantum properties are relevant. Here we present a new device architecture for 2D semiconductors that utilizes a charge-transfer layer to achieve large hole do** in the contact region, and implement this technique to measure magneto-transport properties of high-purity monolayer WSe$_2$. We measure a record-high hole mobility of 80,000 cm$^2$/Vs and access channel carrier densities as low as $1.6\times10^{11}$ cm$^{-2}$, an order of magnitude lower than previously achievable. Our ability to realize transparent contact to high-mobility devices at low density enables transport measurement of correlation-driven quantum phases including observation of a low temperature metal-insulator transition in a density and temperature regime where Wigner crystal formation is expected, and observation of the fractional quantum Hall effect under large magnetic fields. The charge transfer contact scheme paves the way for discovery and manipulation of new quantum phenomena in 2D semiconductors and their heterostructures. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Signatures of Z$_3$ Vestigial Potts-nematic order in van der Waals antiferromagnets

Authors: Zhuoliang Ni, Daniil S. Antonenko, W. Joe Meese, Qi Tian, Nan Huang, Amanda V. Haglund, Matthew Cothrine, David G. Mandrus, Rafael M. Fernandes, Jörn W. F. Venderbos, Liang Wu

Abstract: Layered van der Waals magnets have attracted much recent attention as a promising and versatile platform for exploring intrinsic two-dimensional magnetism. Within this broader class, the transition metal phosphorous trichalcogenides $M$P$X_3$ stand out as particularly interesting, as they provide a realization of honeycomb lattice magnetism and are known to display a variety of magnetic ordering p… ▽ More Layered van der Waals magnets have attracted much recent attention as a promising and versatile platform for exploring intrinsic two-dimensional magnetism. Within this broader class, the transition metal phosphorous trichalcogenides $M$P$X_3$ stand out as particularly interesting, as they provide a realization of honeycomb lattice magnetism and are known to display a variety of magnetic ordering phenomena as well as superconductivity under pressure. One example, found in a number of different materials, is commensurate single-$Q$ zigzag antiferromagnetic order, which spontaneously breaks the spatial threefold $(C_3)$ rotation symmetry of the honeycomb lattice. The breaking of multiple distinct symmetries in the magnetic phase suggests the possibility of a sequence of distinct transitions as a function of temperature, and a resulting intermediate $\mathbb{Z}_3$-nematic phase which exists as a paramagnetic vestige of zigzag magnetic order -- a scenario known as vestigial ordering. Here, we report the observation of key signatures of vestigial Potts-nematic order in rhombohedral FePSe$_3$. By performing linear dichroism imaging measurements -- an ideal probe of rotational symmetry breaking -- we find that the $C_3$ symmetry is already broken above the Néel temperature. We show that these observations are explained by a general Ginzburg-Landau model of vestigial nematic order driven by magnetic fluctuations and coupled to residual strain. An analysis of the domain structure as temperature is lowered and a comparison with zigzag-ordered monoclinic FePS$_3$ reveals a broader applicability of the Ginzburg-Landau model in the presence of external strain, and firmly establishes the $M$P$X_3$ magnets as a new experimental venue for studying the interplay between Potts-nematicity, magnetism and superconductivity. △ Less

Submitted 14 August, 2023; originally announced August 2023.

Comments: 6 pages, 4 figures + supplementary material

Direct visualization of the charge transfer in Graphene/$α$-RuCl$_3$ heterostructure

Authors: Antonio Rossi, Riccardo Dettori, Cameron Johnson, Jesse Balgley, John C. Thomas, Luca Francaviglia, Andreas K. Schmid, Kenji Watanabe, Takashi Taniguchi, Matthew Cothrine, David G. Mandrus, Chris Jozwiak, Aaron Bostwick, Erik A. Henriksen, Alexander Weber-Bargioni, Eli Rotenberg

Abstract: We investigate the electronic properties of a graphene and $α$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a c… ▽ More We investigate the electronic properties of a graphene and $α$-ruthenium trichloride (hereafter RuCl$_3$) heterostructure, using a combination of experimental and theoretical techniques. RuCl$_3$ is a Mott insulator and a Kitaev material, and its combination with graphene has gained increasing attention due to its potential applicability in novel electronic and optoelectronic devices. By using a combination of spatially resolved photoemission spectroscopy, low energy electron microscopy, and density functional theory (DFT) calculations we are able to provide a first direct visualization of the massive charge transfer from graphene to RuCl$_3$, which can modify the electronic properties of both materials, leading to novel electronic phenomena at their interface. The electronic band structure is compared to DFT calculations that confirm the occurrence of a Mott transition for RuCl$_3$. Finally, a measurement of spatially resolved work function allows for a direct estimate of the interface dipole between graphene and RuCl$_3$. The strong coupling between graphene and RuCl$_3$ could lead to new ways of manipulating electronic properties of two-dimensional lateral heterojunction. Understanding the electronic properties of this structure is pivotal for designing next generation low-power opto-electronics devices. △ Less

Submitted 29 May, 2023; v1 submitted 26 May, 2023; originally announced May 2023.

Spin sensitive transport in a spin liquid material: revealing a robustness of spin anisotropy

Authors: H. Idzuchi, M. Kimata, S. Okamoto, P. Laurell, N. Mohanta, M. Cothrine, S. E. Nagler, D. Mandrus, A. Banerjee, Y. P. Chen

Abstract: Alpha-phase (a-) RuCl_3 has emerged as a prime candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin sensitive transport measurements to probe spin correlation in a-RuCl_3 using a proximal spin Hall metal platinum (Pt). Both transverse and longitudinal resistivities exhibit oscillations as function of the… ▽ More Alpha-phase (a-) RuCl_3 has emerged as a prime candidate for a quantum spin liquid (QSL) that promises exotic quasiparticles relevant for fault-tolerant quantum computation. Here, we report spin sensitive transport measurements to probe spin correlation in a-RuCl_3 using a proximal spin Hall metal platinum (Pt). Both transverse and longitudinal resistivities exhibit oscillations as function of the angle between an in-plane magnetic field and the current, akin to previously measured spin Hall magnetoresistance (SMR) in antiferromagnet/Pt heterostructures. The oscillations are observed from 1.5 T to 18 T, both within and beyond the magnetic field range where the antiferromagnetic order and QSL state are reported in a-RuCl_3. The SMR oscillations show that spins in a-RuCl3 are largely locked to an in-plane quantization axis transverse to the magnetic field, constituting a continuous-symmetry-broken state that does not necessarily represent a long-range order. This robust anisotropy of spin axis uncovers critical energy scales connected with reported QSL signatures in a-RuCl_3. Simulations suggest a predominantly antiferromagnetic correlation to moderately high magnetic-fields, that may support the SMR oscillations. The coupling of the spin states within a-RuCl_3 and Pt demonstrated in our experiment opens a transport route to exploring exotic spin phases and device functionalities of QSL materials. △ Less

Submitted 6 April, 2022; originally announced April 2022.

Ultra-sharp lateral $p\text{-}n$ junctions in modulation-doped graphene

Authors: Jesse Balgley, Jackson Butler, Sananda Biswas, Zhehao Ge, Samuel Lagasse, Takashi Taniguchi, Kenji Watanabe, Matthew Cothrine, David G. Mandrus, Jairo Velasco Jr., Roser Valentí, Erik A. Henriksen

Abstract: We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ acro… ▽ More We demonstrate ultra-sharp (${\lesssim}\,10\text{ nm}$) lateral $p\text{-}n$ junctions in graphene using electronic transport, scanning tunneling microscopy, and first principles calculations. The $p\text{-}n$ junction lies at the boundary between differentially-doped regions of a graphene sheet, where one side is intrinsic and the other is charge-doped by proximity to a flake of $α$-RuCl$_3$ across a thin insulating barrier. We extract the $p\text{-}n$ junction contribution to the device resistance to place bounds on the junction width. We achieve an ultra-sharp junction when the boundary between the intrinsic and doped regions is defined by a cleaved crystalline edge of $α$-RuCl$_3$ located 2 nm from the graphene. Scanning tunneling spectroscopy in heterostructures of graphene, hexagonal boron nitride, and $α$-RuCl$_3$ shows potential variations on a sub-10 nm length scale. First principles calculations reveal the charge-do** of graphene decays sharply over just nanometers from the edge of the $α$-RuCl$_3$ flake. △ Less

Submitted 31 May, 2022; v1 submitted 11 March, 2022; originally announced March 2022.

Nanometer-scale lateral p-n junctions in graphene/$α$-RuCl$_3$ heterostructures

Authors: Daniel J. Rizzo, Sara Shabani, Bjarke S. Jessen, ** Zhang, Alexander S. McLeod, Carmen Rubio-Verdú, Francesco L. Ruta, Matthew Cothrine, Jiaqiang Yan, David G. Mandrus, Stephen E. Nagler, Angel Rubio, James C. Hone, Cory R. Dean, Abhay N. Pasupathy, D. N. Basov

Abstract: The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $α$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nano… ▽ More The ability to create high-quality lateral p-n junctions at nanometer length scales is essential for the next generation of two-dimensional (2D) electronic and plasmonic devices. Using a charge-transfer heterostructure consisting of graphene on $α$-RuCl$_3$, we conduct a proof-of-concept study demonstrating the existence of intrinsic nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multi-pronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy ($\textit{s}$-SNOM) in order to simultaneously probe both the electronic and optical responses of nanobubble p-n junctions. Our STM and STS results reveal that p-n junctions with a band offset of more than 0.6 eV can be achieved over lateral length scale of less than 3 nm, giving rise to a staggering effective in-plane field in excess of 10$^8$ V/m. Concurrent $\textit{s}$-SNOM measurements confirm the utility of these nano-junctions in plasmonically-active media, and validate the use of a point-scatterer formalism for modeling surface plasmon polaritons (SPPs). Model $\textit{ab initio}$ density functional theory (DFT) calculations corroborate our experimental data and reveal a combination of sub-angstrom and few-angstrom decay processes dictating the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for the use of charge-transfer interfaces such as graphene/$α$-RuCl$_3$ to generate p-n nano-junctions. △ Less

Submitted 12 November, 2021; originally announced November 2021.

Comments: D.J.R., S.S., B.S.J., and J.Z. contributed equally. File contains main manuscript (14 pages, 4 figures) and supplementary information (13 pages, 4 figures)