Showing 1–50 of 113 results for author: Coppersmith, S N

Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells

Authors: Jan Klos, Jan Tröger, Jens Keutgen, Merritt P. Losert, Helge Riemann, Nikolay V. Abrosimov, Joachim Knoch, Hartmut Bracht, Susan N. Coppersmith, Mark Friesen, Oana Cojocaru-Mirédin, Lars R. Schreiber, Dominique Bougeard

Abstract: Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing… ▽ More Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties. △ Less

Submitted 30 May, 2024; originally announced May 2024.

Comments: 18 pages, 7 figures

Strategies for enhancing spin-shuttling fidelities in Si/SiGe quantum wells with random-alloy disorder

Authors: Merritt P. Losert, Max Oberländer, Julian D. Teske, Mats Volmer, Lars R. Schreiber, Hendrik Bluhm, S. N. Coppersmith, Mark Friesen

Abstract: Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with va… ▽ More Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential. Here, we use simulations to study challenges for spin shuttling in Si/SiGe heterostructures caused by the valley degree of freedom. We show that for devices with valley splitting dominated by alloy disorder, one can expect to encounter pockets of low valley splitting, given a long-enough shuttling path. At such locations, inter-valley tunneling leads to dephasing of the spin wavefunction, substantially reducing the shuttling fidelity. We show how to mitigate this problem by modifying the heterostructure composition, or by varying the vertical electric field, the shuttling velocity, the shape and size of the dot, or the shuttling path. We further show that combinations of these strategies can reduce the shuttling infidelity by several orders of magnitude, putting shuttling fidelities sufficient for error correction within reach. △ Less

Submitted 23 May, 2024; v1 submitted 2 May, 2024; originally announced May 2024.

Comments: 23 pages, 12 figures

Effects of Temperature Fluctuations on Charge Noise in Quantum Dot Qubits

Authors: Dan Mickelsen, Herve M. Carruzzo, Susan N. Coppersmith, Clare C. Yu

Abstract: Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^αspectrum, where f is frequency and α\lesssim 1. It has recently been proposed that 1/f^αnoise spectra can emerge from a few thermally activated two-level fluctuators in the presence of sub-bath temperature fluctuations associated with a two-dimensional electron gas (2DEG)~\cite{Ahn2021}. We investigate this prop… ▽ More Silicon quantum dot qubits show great promise but suffer from charge noise with a 1/f^αspectrum, where f is frequency and α\lesssim 1. It has recently been proposed that 1/f^αnoise spectra can emerge from a few thermally activated two-level fluctuators in the presence of sub-bath temperature fluctuations associated with a two-dimensional electron gas (2DEG)~\cite{Ahn2021}. We investigate this proposal by doing Monte Carlo simulations of a single Ising spin in a bath with a fluctuating temperature. We find that to obtain noise with a $1/f^α$ spectrum with $alpha \lesssim 1 down to low frequencies, the duration of temperature fluctuations must be comparable to the inverse of the lowest frequency at which the noise is measured. This result is consistent with an analytic calculation in which the fluctuator is a two-state system with dynamics governed by time-dependent switching rates. In this case we find that the noise spectrum follows a Lorentzian at frequencies lower than the inverse of the average duration of the lowest switching rate. We then estimate relaxation times of thermal fluctuations by considering thermal diffusion in an electron gas in a confined geometry. We conclude that temperature fluctuations in a 2DEG sub-bath would require an unphysically long duration to be consistent with experimental measurements of 1/f-like charge noise in quantum dots at frequencies extending well below 1 Hz. △ Less

Submitted 23 May, 2023; originally announced May 2023.

Comments: 8 pages, 5 figures

Journal ref: Physical Review B 108, 075303 (2023)

Multielectron dots provide faster Rabi oscillations when the core electrons are strongly confined

Authors: H. Ekmel Ercan, Christopher R. Anderson, S. N. Coppersmith, Mark Friesen, Mark F. Gyure

Abstract: Increasing the number of electrons in electrostatically confined quantum dots can enable faster qubit gates. Although this has been experimentally demonstrated, a detailed quantitative understanding has been missing. Here we study one- and three-electron quantum dots in silicon/silicon-germanium heterostructures within the context of electrically-driven spin resonance (EDSR) using full configurati… ▽ More Increasing the number of electrons in electrostatically confined quantum dots can enable faster qubit gates. Although this has been experimentally demonstrated, a detailed quantitative understanding has been missing. Here we study one- and three-electron quantum dots in silicon/silicon-germanium heterostructures within the context of electrically-driven spin resonance (EDSR) using full configuration interaction and tight binding approaches. Our calculations show that anharmonicity of the confinement potential plays an important role: while the EDSR Rabi frequency of electrons in a harmonic potential is indifferent to the electron number, soft anharmonic confinements lead to larger and hard anharmonic confinements lead to smaller Rabi frequencies. We also confirm that double dots allow fast Rabi oscillations, and further suggest that purposefully engineered confinements can also yield similarly fast Rabi oscillations in a single dot. Finally, we discuss the role of interface steps. These findings have important implications for the design of multielectron Si/SiGe quantum dot qubits. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Authors: Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci, Susan N. Coppersmith, Mark Friesen

Abstract: Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we t… ▽ More Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we theoretically explore the interplay between quantum-well imperfections that suppress the valley splitting and cause variability, such as broadened interfaces and atomic steps at the interface, while self-consistently accounting for germanium concentration fluctuations. We consider both conventional and unconventional approaches for controlling the valley splitting, and present concrete strategies for implementing them. Our results provide a clear path for achieving qubit uniformity in a scalable silicon quantum computer. △ Less

Submitted 11 January, 2024; v1 submitted 4 March, 2023; originally announced March 2023.

Comments: 35 pages, 22 figures

Journal ref: Phys. Rev. B 108, 125405 (2023)

Latched readout for the quantum dot hybrid qubit

Authors: J. Corrigan, J. P. Dodson, Brandur Thorgrimsson, Samuel F. Neyens, T. J. Knapp, Thomas McJunkin, S. N. Coppersmith, M. A. Eriksson

Abstract: A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a m… ▽ More A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting. △ Less

Submitted 15 October, 2022; originally announced October 2022.

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Authors: Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson

Abstract: Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new hete… ▽ More Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices. △ Less

Submitted 15 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Comments: Main text and supplemental information, 11 pages, 7 figures

Journal ref: Nature Communications 13, 7777 (2022)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci

Abstract: Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor… ▽ More Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting. △ Less

Submitted 1 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Journal ref: Nature Communications 13, 7730 (2022)

Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands

Authors: J. C. Abadillo-Uriel, Evelyn King, S. N. Coppersmith, Mark Friesen

Abstract: Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operat… ▽ More Implementing two-qubit gates via strong coupling between quantum-dot qubits and a superconducting microwave cavity requires achieving coupling rates that are much faster than decoherence rates. Typically, this involves tuning the qubit either to a sweet spot, where it is relatively insensitive to charge noise, or to a point where it is resonant with the microwave cavity. Unfortunately, such operating points seldom coincide. Here, we theoretically investigate several schemes for performing gates between two quantum-dot hybrid qubits, mediated by a microwave cavity. The rich physics of the quantum dot hybrid qubit gives rise to two types of sweet spots, which can occur at operating points with strong charge dipole moments. Such strong interactions provide new opportunities for off-resonant gating, thereby removing one of the main obstacles for long-distance two-qubit gates. Our results suggest that the numerous tuning knobs of quantum dot hybrid qubits make them good candidates for strong coupling. In particular, we show that off-resonant red-sideband-mediated two-qubit gates can exhibit fidelities $>$95\% for realistic operating parameters, and we describe improvements that could potentially yield gate fidelities $>$99\%. △ Less

Submitted 19 June, 2021; originally announced June 2021.

Comments: 15 pages, 5 figures

Journal ref: Phys. Rev. A 104, 032612 (2021)

Strong electron-electron interactions in Si/SiGe quantum dots

Authors: H. Ekmel Ercan, S. N. Coppersmith, Mark Friesen

Abstract: Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy spectrum and tunneling to states outside the dot. The situation is even more complicated for silicon dots, due to the interplay between valley, orbital, and interactio… ▽ More Interactions between electrons can strongly affect the shape and functionality of multi-electron quantum dots. The resulting charge distributions can be localized, as in the case of Wigner molecules, with consequences for the energy spectrum and tunneling to states outside the dot. The situation is even more complicated for silicon dots, due to the interplay between valley, orbital, and interaction energy scales. Here, we study two-electron wavefunctions in electrostatically confined quantum dots formed in a SiGe/Si/SiGe quantum well at zero magnetic field, using a combination of tight-binding and full-configuration-interaction (FCI) methods, and taking into account atomic-scale disorder at the quantum well interface. We model dots based on recent qubit experiments, which straddle the boundary between strongly interacting and weakly interacting systems, and display a rich and diverse range of behaviors. Our calculations show that strong electron-electron interactions, induced by weak confinement, can significantly suppress the low-lying, singlet-triplet (ST) excitation energy. However, when the valley-orbit interactions caused by interfacial disorder are weak, the ST splitting can approach its noninteracting value, even when the electron-electron interactions are strong and Wigner-molecule behavior is observed. These results have important implications for the rational design and fabrication of quantum dot qubits with predictable properties. △ Less

Submitted 25 May, 2021; v1 submitted 22 May, 2021; originally announced May 2021.

Comments: 22 pages, 11 figures

Journal ref: Phys. Rev. B 104, 235302 (2021)

Charge-noise resilience of two-electron quantum dots in Si/SiGe heterostructures

Authors: H. Ekmel Ercan, Mark Friesen, S. N. Coppersmith

Abstract: The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that both of these triplets are present in the typical operating regime, but that only the valley-excited triplet offers intrinsic protection against char… ▽ More The valley degree of freedom presents challenges and opportunities for silicon spin qubits. An important consideration for singlet-triplet states is the presence of two distinct triplets, comprised of valley vs. orbital excitations. Here we show that both of these triplets are present in the typical operating regime, but that only the valley-excited triplet offers intrinsic protection against charge noise. We further show that this protection arises naturally in dots with stronger confinement. These results reveal an inherent advantage for silicon-based multi-electron qubits. △ Less

Submitted 25 May, 2021; v1 submitted 22 May, 2021; originally announced May 2021.

Comments: 6 pages, 5 figures

Journal ref: Phys. Rev. Lett. 128, 247701 (2022)

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Authors: Thomas McJunkin, E. R. MacQuarrie, Leah Tom, S. F. Neyens, J. P. Dodson, Brandur Thorgrimsson, J. Corrigan, H. Ekmel Ercan, D. E. Savage, M. G. Lagally, Robert Joynt, S. N. Coppersmith, Mark Friesen, M. A. Eriksson

Abstract: Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure i… ▽ More Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 104, 085406 (2021)

How valley-orbit states in silicon quantum dots probe quantum well interfaces

Authors: J. P. Dodson, H. Ekmel Ercan, J. Corrigan, Merritt Losert, Nathan Holman, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration int… ▽ More The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface. △ Less

Submitted 6 April, 2022; v1 submitted 26 March, 2021; originally announced March 2021.

Comments: 9 pages, 5 figures

Journal ref: Physical Review Letters (Vol. 128, Issue 14), (2022)

Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule

Authors: J. Corrigan, J. P. Dodson, H. Ekmel Ercan, J. C. Abadillo-Uriel, Brandur Thorgrimsson, T. J. Knapp, Nathan Holman, Thomas McJunkin, Samuel F. Neyens, E. R. MacQuarrie, Ryan H. Foote, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum do… ▽ More Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Lett. 127, 127701 (2021)

Realization of a $CQ_3$ Qubit: energy spectroscopy and coherence

Authors: Benedikt Kratochwil, Jonne V. Koski, Andreas J. Landig, Pasquale Scarlino, José C. Abadillo-Uriel, Christian Reichl, Susan N. Coppersmith, Werner Wegscheider, Mark Friesen, Andreas Wallraff, Thomas Ihn, Klaus Ensslin

Abstract: The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose… ▽ More The energy landscape of a single electron in a triple quantum dot can be tuned such that the energy separation between ground and excited states becomes a flat function of the relevant gate voltages. These so-called sweet spots are beneficial for charge coherence, since the decoherence effects caused by small fluctuations of gate voltages or surrounding charge fluctuators are minimized. We propose a new operation point for a triple quantum dot charge qubit, a so-called $CQ_3$-qubit, having a third order sweet spot. We show strong coupling of the qubit to single photons in a frequency tunable high-impedance SQUID-array resonator. In the dispersive regime we investigate the qubit linewidth in the vicinity of the proposed operating point. In contrast to the expectation for a higher order sweet spot, we there find a local maximum of the linewidth. We find that this is due to a non-negligible contribution of noise on the quadrupolar detuning axis not being in a sweet spot at the proposed operating point. While the original motivation to realize a low-decoherence charge qubit was not fulfilled, our analysis provides insights into charge decoherence mechanisms relevant also for other qubits. △ Less

Submitted 10 June, 2020; originally announced June 2020.

Comments: 12 pages, 11 figures

Journal ref: Phys. Rev. Research 3, 013171 (2021)

Microwave Engineering for Semiconductor Quantum Dots in a cQED Architecture

Authors: Nathan Holman, J. P. Dodson, L. F. Edge, S. N. Coppersmith, M. Friesen, R. McDermott, M. A. Eriksson

Abstract: We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the chara… ▽ More We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the characteristic impedance of the dot bias wiring, on-chip quality factors of 8140 can be attained without the addition of explicit filtering. Using this approach we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication we are able to improve ground plane integrity and keep microwave crosstalk below -20 dB out to 18 GHz while maintaining high wire density which will be necessary for future circuit quantum electrodyanmics (cQED) quantum dot processors. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Comments: 5 pages, 3 figures

Effect of quantum Hall edge strips on valley splitting in silicon quantum wells

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Alberto Tosato, Mario Lodari, Peter L. Bavdaz, Lucas Stehouwer, Payam Amin, James S. Clarke, Susan N. Coppersmith, Amir Sammak, Menno Veldhorst, Mark Friesen, Giordano Scappucci

Abstract: We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases… ▽ More We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field $B$ and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with $B$ and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density $eB/h$ across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 $μ$eV/10$^{11}$cm$^{-2}$, consistent with theoretical predictions for near-perfect quantum well top interfaces. △ Less

Submitted 29 September, 2020; v1 submitted 3 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. Lett. 125, 186801 (2020)

Pauli Blockade in Silicon Quantum Dots with Spin-Orbit Control

Authors: Amanda Seedhouse, Tuomo Tanttu, Ross C. C. Leon, Ruichen Zhao, Kuan Yen Tan, Bas Hensen, Fay E. Hudson, Kohei M. Itoh, Jun Yoneda, Chih Hwan Yang, Andrea Morello, Arne Laucht, Susan N. Coppersmith, Andre Saraiva, Andrew S. Dzurak

Abstract: Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained… ▽ More Quantum computation relies on accurate measurements of qubits not only for reading the output of the calculation, but also to perform error correction. Most proposed scalable silicon architectures utilize Pauli blockade of triplet states for spin-to-charge conversion. In recent experiments, there have been instances when instead of conventional triplet blockade readout, Pauli blockade is sustained only between parallel spin configurations, with $|T_0\rangle$ relaxing quickly to the singlet state and leaving $|T_+\rangle$ and $|T_-\rangle$ states blockaded -- which we call \textit{parity readout}. Both types of blockade can be used for readout in quantum computing, but it is crucial to maximize the fidelity and understand in which regime the system operates. We devise and perform an experiment in which the crossover between parity and singlet-triplet readout can be identified by investigating the underlying physics of the $|T_0\rangle$ relaxation rate. This rate is tunable over four orders of magnitude by controlling the Zeeman energy difference between the dots induced by spin-orbit coupling, which in turn depends on the direction of the applied magnetic field. We suggest a theoretical model incorporating charge noise and relaxation effects that explains quantitatively our results. Investigating the model both analytically and numerically, we identify strategies to obtain on-demand either singlet-triplet or parity readout consistently across large arrays of dots. We also discuss how parity readout can be used to perform full two-qubit state tomography and its impact on quantum error detection schemes in large-scale silicon quantum computers. △ Less

Submitted 13 May, 2021; v1 submitted 15 April, 2020; originally announced April 2020.

Comments: Updated title and text

Journal ref: PRX Quantum 2, 010303 (2021)

Fabrication process and failure analysis for robust quantum dots in silicon

Authors: J. P. Dodson, Nathan Holman, Brandur Thorgrimsson, Samuel F. Neyens, E. R. MacQuarrie, Thomas McJunkin, Ryan H. Foote, L. F. Edge, S. N. Coppersmith, M. A. Eriksson

Abstract: We present an improved fabrication process for overlap** aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetti… ▽ More We present an improved fabrication process for overlap** aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlap** aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure. △ Less

Submitted 15 September, 2020; v1 submitted 12 April, 2020; originally announced April 2020.

Comments: 5 figures, 9 pages

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Authors: E. R. MacQuarrie, Samuel F. Neyens, J. P. Dodson, J. Corrigan, Brandur Thorgrimsson, Nathan Holman, M. Palma, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously dr… ▽ More Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed. △ Less

Submitted 15 March, 2020; originally announced March 2020.

Comments: Main text plus supplemental information, 24 pages, 13 figures total)

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Authors: Xiao Xue, Benjamin D'Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen

Abstract: Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logica… ▽ More Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. X 10, 021006 (2020)

The effect of external electric fields on silicon with superconducting gallium nano-precipitates

Authors: Brandur Thorgrimsson, Thomas McJunkin, E. R. MacQuarrie, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of the superconductivity of silicon ion-implanted with gallium. Here we measure 40 different samples and explore both a variety of preparation methods (yielding bot… ▽ More Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of the superconductivity of silicon ion-implanted with gallium. Here we measure 40 different samples and explore both a variety of preparation methods (yielding both superconducting and non-superconducting samples), and the reproducibility of one of the preparation methods yielding superconducting samples. While we find agreement with the existing literature that superconducting effects are visible in this system, we also find that this superconductivity is not influenced by voltages applied to a top gate. The superconductivity in this materials system is not gateable for applied electric fields as large as 8 MV/cm. We also present results of scanning transmission electron microscopy imaging of some of the same samples for which we report electronic characterization. In agreement with the existing literature, we find that the presence of Ga precipitates is essential to the presence of a superconducting transition in these samples. However, we also find evidence for large inhomogeneities in this system, which we discuss in connection with the lack of gateability we report here. △ Less

Submitted 12 June, 2020; v1 submitted 15 November, 2019; originally announced November 2019.

Comments: 22 pages, 6 figures

Journal ref: J. Appl. Phys. 127, 215102 (2020)

Majorana bound states in nanowire-superconductor hybrid systems in periodic magnetic fields

Authors: Viktoriia Kornich, Maxim G. Vavilov, Mark Friesen, M. A. Eriksson, S. N. Coppersmith

Abstract: We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross-section and fields with two sinusoidal components. We show that MBS are robust to imperfect helical magnetic fields. In par… ▽ More We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross-section and fields with two sinusoidal components. We show that MBS are robust to imperfect helical magnetic fields. In particular, if the amplitude of one component is tuned to the value determined by the superconducting order parameter in the wire, the MBS can exist even if the second component has a much smaller amplitude. We also explore the effect of the chemical potential on the phase diagram. Our analysis is both numerical and analytical, with good agreement between the two methods. △ Less

Submitted 15 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 101, 125414 (2020)

High-Fidelity Entangling Gates for Quantum-Dot Hybrid Qubits Based on Exchange Interactions

Authors: Yuan-Chi Yang, S. N. Coppersmith, Mark Friesen

Abstract: Quantum dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at… ▽ More Quantum dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at their sweet spots at all times. The interaction is controlled via the inter-qubit tunnel coupling. By simulating such gates in the presence of realistic quasistatic and $1\!/\!f$ charge noise, we show that our scheme should enable controlled-$Z$ gates of length $\sim$5~ns, and Z-CNOT gates of length $\sim$7~ns, both with fidelities $>$99.9\%. △ Less

Submitted 27 January, 2020; v1 submitted 8 October, 2019; originally announced October 2019.

Comments: 19 pages

Journal ref: Phys. Rev. A 101, 012338 (2020)

Measurements of capacitive coupling within a quadruple quantum dot array

Authors: Samuel F. Neyens, E. R. MacQuarrie, J. P. Dodson, J. Corrigan, Nathan Holman, Brandur Thorgrimsson, M. Palma, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract… ▽ More We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy. △ Less

Submitted 18 July, 2019; originally announced July 2019.

Comments: 6 pages + supplementary information, 4 figures

Journal ref: Phys. Rev. Applied 12, 064049 (2019)

High-fidelity single-qubit gates in a strongly driven quantum dot hybrid qubit with $1/f$ charge noise

Authors: Yuan-Chi Yang, S. N. Coppersmith, Mark Friesen

Abstract: Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than… ▽ More Semiconductor double quantum dot hybrid qubits are promising candidates for high-fidelity quantum computing. However, their performance is limited by charge noise, which is ubiquitous in solid-state devices, and phonon-induced dephasing. Here we explore methods for improving the quantum operations of a hybrid qubit, using strong microwave driving to enable gate operations that are much faster than decoherence processes. Using numerical simulations and a theoretical method based on a cumulant expansion, we analyze qubit dynamics in the presence of $1/f$ charge noise, which forms the dominant decoherence mechanism in many solid-state devices. We show that, while strong-driving effects and charge noise both reduce the quantum gate fidelity, simple pulse-sha** techniques effectively suppress the strong-driving effects. Moreover, a broad AC sweet spot emerges when the detuning parameter and the tunneling coupling are driven simultaneously. Taking into account phonon-mediated noise, we find that it should be possible to achieve $X_π$ gates with fidelities higher than $99.9\%$. △ Less

Submitted 21 June, 2019; v1 submitted 19 June, 2019; originally announced June 2019.

Comments: 14 pages, 6 figures

Journal ref: Phys. Rev. A 100, 022337 (2019)

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 6+6 pages, 4+3 figures

Journal ref: Phys. Rev. B 101, 235133 (2020)

Enhancing the dipolar coupling of a $S$-$T_0$ qubit with a transverse sweet spot

Authors: J. C. Abadillo-Uriel, M. A. Eriksson, S. N. Coppersmith, M. Friesen

Abstract: A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where… ▽ More A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where dephasing is minimized. Here, we explore an important, new resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables (i) direct transitions between qubit states, (ii) a strong, charge-like qubit coupling, and (iii) leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines maximal tunability of the coupling strength with leading-order noise suppression. We perform simulations with $1/f$-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities $>99$\% under realistic conditions. These results greatly expand the toolbox for singlet-triplet qubits. △ Less

Submitted 16 May, 2019; v1 submitted 15 May, 2019; originally announced May 2019.

Comments: 9 pages + 4 pages of SI

Journal ref: Nature Communications 10, 5641 (2019)

Strong photon coupling to the quadrupole moment of an electron in solid state

Authors: Jonne V. Koski, Andreas J. Landig, Maximilian Russ, José C. Abadillo-Uriel, Pasquale Scarlino, Benedikt Kratochwil, Christian Reichl, Werner Wegscheider, Guido Burkard, Mark Friesen, Susan N. Coppersmith, Andreas Wallraff, Klaus Ensslin, Thomas Ihn

Abstract: The implementation of circuit quantum electrodynamics allows coupling distant qubits by microwave photons hosted in on-chip superconducting resonators. Typically, the qubit-photon interaction is realized by coupling the photons to the electric dipole moment of the qubit. A recent proposal suggests storing the quantum information in the electric quadrupole moment of an electron in a triple quantum… ▽ More The implementation of circuit quantum electrodynamics allows coupling distant qubits by microwave photons hosted in on-chip superconducting resonators. Typically, the qubit-photon interaction is realized by coupling the photons to the electric dipole moment of the qubit. A recent proposal suggests storing the quantum information in the electric quadrupole moment of an electron in a triple quantum dot. The qubit is expected to have improved coherence since it is insensitive to dipolar noise produced by distant voltage fluctuators. Here we experimentally realize a quadrupole qubit in a linear array of three quantum dots in a GaAs/AlGaAs heterostructure. A high impedance microwave resonator coupled to the middle dot interacts with the qubit quadrupole moment. We demonstrate strong quadrupole qubit--photon coupling and observe improved coherence properties when operating the qubit in the parameter space where the dipole coupling vanishes. △ Less

Submitted 2 May, 2019; originally announced May 2019.

Journal ref: Nature Physics 16, 642-646 (2020)

Coherent long-distance spin-qubit-transmon coupling

Authors: A. J. Landig, J. V. Koski, P. Scarlino, C. Müller, J. C. Abadillo-Uriel, B. Kratochwil, C. Reichl, W. Wegscheider, S. N. Coppersmith, Mark Friesen, A. Wallraff, T. Ihn, K. Ensslin

Abstract: Spin qubits and superconducting qubits are among the promising candidates for a solid state quantum computer. For the implementation of a hybrid architecture which can profit from the advantages of either world, a coherent long-distance link is necessary that integrates and couples both qubit types on the same chip. We realize such a link with a frequency-tunable high impedance SQUID array resonat… ▽ More Spin qubits and superconducting qubits are among the promising candidates for a solid state quantum computer. For the implementation of a hybrid architecture which can profit from the advantages of either world, a coherent long-distance link is necessary that integrates and couples both qubit types on the same chip. We realize such a link with a frequency-tunable high impedance SQUID array resonator. The spin qubit is a resonant exchange qubit hosted in a GaAs triple quantum dot. It can be operated at zero magnetic field, allowing it to coexist with superconducting qubits on the same chip. We find a working point for the spin qubit, where the ratio between its coupling strength and decoherence rate is optimized. We observe coherent interaction between the resonant exchange qubit and a transmon qubit in both resonant and dispersive regimes, where the interaction is mediated either by real or virtual resonator photons. △ Less

Submitted 10 March, 2019; originally announced March 2019.

Journal ref: Nature Communications 10, 5037 (2019)

Adiabatic two-qubit gates in capacitively coupled quantum dot hybrid qubits

Authors: Adam Frees, Sebastian Mehl, John King Gamble, Mark Friesen, S. N. Coppersmith

Abstract: The ability to tune qubits to flat points in their energy dispersions ("sweet spots") is an important tool for mitigating the effects of charge noise and dephasing in solid-state devices. However, the number of derivatives that must be simultaneously set to zero grows exponentially with the number of coupled qubits, making the task untenable for as few as two qubits. This is a particular problem f… ▽ More The ability to tune qubits to flat points in their energy dispersions ("sweet spots") is an important tool for mitigating the effects of charge noise and dephasing in solid-state devices. However, the number of derivatives that must be simultaneously set to zero grows exponentially with the number of coupled qubits, making the task untenable for as few as two qubits. This is a particular problem for adiabatic gates, due to their slower speeds. Here, we propose an adiabatic two-qubit gate for quantum dot hybrid qubits, based on the tunable, electrostatic coupling between distinct charge configurations. We confirm the absence of a conventional sweet spot, but show that controlled-Z (CZ) gates can nonetheless be optimized to have fidelities of $\sim$99% for a typical level of quasistatic charge noise ($σ_\varepsilon$$\simeq$1 $μ$eV). We then develop the concept of a dynamical sweet spot (DSS), for which the time-averaged energy derivatives are set to zero, and identify a simple pulse sequence that achieves an approximate DSS for a CZ gate, with a 5$\times$ improvement in the fidelity. We observe that the results depend on the number of tunable parameters in the pulse sequence, and speculate that a more elaborate sequence could potentially attain a true DSS. △ Less

Submitted 7 December, 2018; originally announced December 2018.

Comments: 14 pages, 9 figures

Journal ref: npj.Quant.Inf. 5 (2019) 73

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

Authors: X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K. Vandersypen

Abstract: We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity i… ▽ More We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 6+5 pages, 6 figures

Journal ref: Phys. Rev. X 9, 021011 (2019)

Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

Authors: Evelyn King, Joshua S. Schoenfield, M. J. Calderón, Belita Koiller, André Saraiva, Xuedong Hu, HongWen Jiang, Mark Friesen, S. N. Coppersmith

Abstract: One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing acciden… ▽ More One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing accidental levels near the device's active region that allow spin blockade lifting. We also present evidence that these effects can be mitigated by device design modifications, such as overlap** gates. △ Less

Submitted 14 April, 2020; v1 submitted 29 July, 2018; originally announced July 2018.

Comments: 10 pages, 8 figures

Journal ref: Phys. Rev. B 101, 155411 (2020)

Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices

Authors: Adam Frees, John King Gamble, Daniel R. Ward, Robin Blume-Kohout, M. A. Eriksson, Mark Friesen, S. N. Coppersmith

Abstract: Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device… ▽ More Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, whose positions are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these systems with as few electrode voltage changes as possible. Here, we introduce a protocol, which we call the Compressed Optimization of Device Architectures (CODA), in order to both efficiently identify sparse sets of voltage changes that control quantum systems, and to introduce a metric which can be used to compare device designs. As an example of the former, we apply this method to simulated devices with up to 100 quantum dots and show that CODA automatically tunes devices more efficiently than other common nonlinear optimizers. To demonstrate the latter, we determine the optimal lateral scale for a triple quantum dot, yielding a simulated device that can be tuned with small voltage changes on a limited number of electrodes. △ Less

Submitted 13 January, 2019; v1 submitted 12 June, 2018; originally announced June 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. Applied 11, 024063 (2019)

Achieving High-Fidelity Single-Qubit Gates in a Strongly Driven Charge Qubit with $1\!/\!f$ Charge Noise

Authors: Yuan-Chi Yang, S. N. Coppersmith, Mark Friesen

Abstract: Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities falling below $90\%$. Here, we develop analytical methods to study the evolution of strongly driven charge qubits, for general and $1\!/\!f$ charge-noise spect… ▽ More Charge qubits formed in double quantum dots represent quintessential two-level systems that enjoy both ease of control and efficient readout. Unfortunately, charge noise can cause rapid decoherence, with typical single-qubit gate fidelities falling below $90\%$. Here, we develop analytical methods to study the evolution of strongly driven charge qubits, for general and $1\!/\!f$ charge-noise spectra. We show that special pulsing techniques can simultaneously suppress errors due to strong driving and charge noise, yielding single-qubit gates with fidelities above $99.9\%$. These results demonstrate that quantum dot charge qubits provide a potential route to high-fidelity quantum computation. △ Less

Submitted 7 March, 2019; v1 submitted 6 June, 2018; originally announced June 2018.

Comments: 19 pages, 4 figures

Journal ref: npj Quantum Information 5, 21 (2019)

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

Authors: J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, M. J. Calderón, S. N. Coppersmith, M. A. Eriksson, Mark Friesen

Abstract: We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the… ▽ More We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Comments: 7 pages

Journal ref: Phys. Rev. B 98, 165438 (2018)

The critical role of substrate disorder in valley splitting in Si quantum wells

Authors: Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum we… ▽ More Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures. △ Less

Submitted 15 June, 2018; v1 submitted 5 April, 2018; originally announced April 2018.

Comments: 7 pages

Journal ref: Applied Physics Letters 112, 243107 (2018)

Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots

Authors: L. A. Terrazos, E. Marcellina, Zhanning Wang, S. N. Coppersmith, Mark Friesen, A. R. Hamilton, Xuedong Hu, Belita Koiller, A. L. Saraiva, Dimitrie Culcer, Rodrigo B. Capaz

Abstract: We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger d… ▽ More We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits. △ Less

Submitted 30 January, 2021; v1 submitted 27 March, 2018; originally announced March 2018.

Comments: 1 pages

Journal ref: Phys. Rev. B 103, 125201 (2021)

Phonon-induced decoherence of a charge quadrupole qubit

Authors: Viktoriia Kornich, Maxim G. Vavilov, Mark Friesen, S. N. Coppersmith

Abstract: Many quantum dot qubits operate in regimes where the energy splittings between qubit states are large and phonons can be the dominant source of decoherence. The recently proposed charge quadrupole qubit, based on one electron in a triple quantum dot, employs a highly symmetric charge distribution to suppress the influence of charge noise. To study the effects of phonons on the charge quadrupole qu… ▽ More Many quantum dot qubits operate in regimes where the energy splittings between qubit states are large and phonons can be the dominant source of decoherence. The recently proposed charge quadrupole qubit, based on one electron in a triple quantum dot, employs a highly symmetric charge distribution to suppress the influence of charge noise. To study the effects of phonons on the charge quadrupole qubit, we consider Larmor and Ramsey pulse sequences to identify favorable operating parameters. We show that it is possible to implement typical gates with $>99.99\%$ fidelity in the presence of phonons and charge noise. △ Less

Submitted 16 February, 2018; originally announced February 2018.

Journal ref: New J. Phys. 20, 103048 (2018)

A programmable two-qubit quantum processor in silicon

Authors: T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration… ▽ More With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration onto an industrial platform. In this system, the initialisation, readout, single- and two-qubit gates have been demonstrated in various qubit representations. However, as seen with other small scale quantum computer demonstrations, combining these elements leads to new challenges involving qubit crosstalk, state leakage, calibration, and control hardware which provide invaluable insight towards scaling up. Here we address these challenges and demonstrate a programmable two-qubit quantum processor in silicon by performing both the Deutsch-Josza and the Grover search algorithms. In addition, we characterise the entanglement in our processor through quantum state tomography of Bell states measuring state fidelities between 85-89% and concurrences between 73-80%. These results pave the way for larger scale quantum computers using spins confined to quantum dots. △ Less

Submitted 31 May, 2018; v1 submitted 14 August, 2017; originally announced August 2017.

Achieving High Fidelity Single Qubit Gates in a Strongly Driven Silicon Quantum Dot Hybrid Qubit

Authors: Yuan-Chi Yang, S. N. Coppersmith, Mark Friesen

Abstract: Performing qubit gate operations as quickly as possible can be important to minimize the effects of decoherence. For resonant gates, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage to levels that lie outside the qubit subspace. Strong driving can also present theoretical challenges because preferred tools such as the rotating wave… ▽ More Performing qubit gate operations as quickly as possible can be important to minimize the effects of decoherence. For resonant gates, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage to levels that lie outside the qubit subspace. Strong driving can also present theoretical challenges because preferred tools such as the rotating wave approximation can break down, resulting in complex dynamics that are difficult to control. Here we analyze resonant $X$ rotations of a silicon quantum double dot hybrid qubit within a dressed-state formalism, obtaining results beyond the rotating wave approximation. We obtain analytic formulas for the optimum driving frequency and the Rabi frequency, which both are affected by strong driving. While the qubit states exhibit fast oscillations due to counter-rotating terms and leakage, we show that they can be suppressed to the point that gate fidelities above $99.99\%$ are possible, in the absence of decoherence. Hence decoherence mechanisms, rather than strong-driving effects, should represent the limiting factor for resonant-gate fidelities in quantum dot hybrid qubits. △ Less

Submitted 6 July, 2017; v1 submitted 3 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. A 95, 062321 (2017)

Valley dependent anisotropic spin splitting in silicon quantum dots

Authors: Rifat Ferdous, Erika Kawakami, Pasquale Scarlino, Michał P. Nowak, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Mark A. Eriksson, Lieven M. K. Vandersypen, Rajib Rahman

Abstract: Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically… ▽ More Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. Here, we report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs. △ Less

Submitted 17 August, 2017; v1 submitted 20 February, 2017; originally announced February 2017.

Comments: 9 pages, 5 figures, supplementary (13 pages, 7 figures)

Journal ref: npj Quantum Information 4, 26 (2018)

Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit

Authors: Zhenyi Qi, X. Wu, D. R. Ward, J. R. Prance, Dohun Kim, John King Gamble, R. T. Mohr, Zhan Shi, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark Friesen, S. N. Coppersmith, M. G. Vavilov

Abstract: We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from c… ▽ More We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate. △ Less

Submitted 15 June, 2017; v1 submitted 24 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 96, 115305 (2017)

Pulse sequences for suppressing leakage in single-qubit gate operations

Authors: Joydip Ghosh, S. N. Coppersmith, Mark Friesen

Abstract: Many realizations of solid-state qubits involve couplings to leakage states lying outside the computational subspace, posing a threat to high-fidelity quantum gate operations. Mitigating leakage errors is especially challenging when the coupling strength is unknown, e.g., when it is caused by noise. Here we show that simple pulse sequences can be used to strongly suppress leakage errors for a qubi… ▽ More Many realizations of solid-state qubits involve couplings to leakage states lying outside the computational subspace, posing a threat to high-fidelity quantum gate operations. Mitigating leakage errors is especially challenging when the coupling strength is unknown, e.g., when it is caused by noise. Here we show that simple pulse sequences can be used to strongly suppress leakage errors for a qubit embedded in a three-level system. As an example, we apply our scheme to the recently proposed charge quadrupole (CQ) qubit for quantum dots. These results provide a solution to a key challenge for fault-tolerant quantum computing with solid-state elements. △ Less

Submitted 30 June, 2017; v1 submitted 2 December, 2016; originally announced December 2016.

Comments: 5 pages, 2 figures, Supplemental material attached

Journal ref: Phys. Rev. B 95, 241307 (2017)

Extending the coherence of a quantum dot hybrid qubit

Authors: Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operatin… ▽ More Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/Γ_{\mathrm{Rabi}}$, exceeding $1~\mathrm{μs}$. We find that the slowest $Γ_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself. △ Less

Submitted 19 June, 2017; v1 submitted 15 November, 2016; originally announced November 2016.

Comments: 10 pages, 6 figures. Supplementary material is included as appendices

Journal ref: npj Quantum Information 3, Article number: 32 (2017)

Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance

Authors: P. Scarlino, E. Kawakami, T. Jullien, D. R. Ward, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces tran… ▽ More The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understood through the use of dressed photon-orbital states, enabling a unified understanding of the six microwave resonance lines we observe. Some of these resonances are inter-valley spin transitions that arise from a non-adiabatic process in which both the valley and the spin degree of freedom are excited simultaneously. For these transitions, involving a change in valley-orbit state, we find a tenfold increase in sensitivity to electric fields and electrical noise compared to pure spin transitions, strongly reducing the phase coherence when changes in valley-orbit index are incurred. In contrast to this non-adiabatic transition, the pure spin transitions, whether arising from harmonic or subharmonic generation, are shown to be adiabatic in the orbital sector. The non-linearity of the system is most strikingly manifest in the observation of a dynamical anti-crossing between a spin-flip, inter-valley transition and a three-photon transition enabled by the strong nonlinearity we find in this seemly simple system. △ Less

Submitted 18 May, 2017; v1 submitted 23 August, 2016; originally announced August 2016.

Comments: 23 pages, 11 figures, supplementary material included

Journal ref: Phys. Rev. B 95, 165429 (2017)

A decoherence-free subspace in a charge quadrupole qubit

Authors: Mark Friesen, Joydip Ghosh, M. A. Eriksson, S. N. Coppersmith

Abstract: Quantum computing promises significant speed-up for certain types of computational problems. However, robust implementations of semiconducting qubits must overcome the effects of charge noise that currently limit coherence during gate operations. Here we describe a scheme for protecting solid-state qubits from uniform electric field fluctuations by generalizing the concept of a decoherence-free su… ▽ More Quantum computing promises significant speed-up for certain types of computational problems. However, robust implementations of semiconducting qubits must overcome the effects of charge noise that currently limit coherence during gate operations. Here we describe a scheme for protecting solid-state qubits from uniform electric field fluctuations by generalizing the concept of a decoherence-free subspace for spins, and we propose a specific physical implementation: a quadrupole charge qubit formed in a triple quantum dot. The unique design of the quadrupole qubit enables a particularly simple pulse sequence for suppressing the effects of noise during gate operations. Simulations yield gate fidelities 10-1,000 times better than traditional charge qubits, depending on the magnitude of the environmental noise. Our results suggest that any qubit scheme employing Coulomb interactions (for example, encoded spin qubits or two-qubit gates) could benefit from such a quadrupolar design. △ Less

Submitted 10 July, 2017; v1 submitted 5 May, 2016; originally announced May 2016.

Comments: 10 pages, 3 figures, Supplementary Information included as appendices

Journal ref: Nature Commun. 8, 15923 (2017)

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

Authors: D. R. Ward, Dohun Kim, D. E. Savage, M. G. Lagally, R. H. Foote, Mark Friesen, S. N. Coppersmith, Mark A. Eriksson

Abstract: Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in develo** robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscil… ▽ More Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in develo** robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between double quantum dots by measuring the detuning energy shift ($\approx$ 75 $μ$eV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast conditional Landau-Zener-Stuckelberg interferences with conditonal $π$ phase flip time about 80 ps, showing promising pathways toward multi-qubit entanglement control in semiconductor quantum dots. △ Less

Submitted 27 April, 2016; originally announced April 2016.

Comments: 9 pages, 8 figures including supplementary information

Journal ref: npj. Quant. Inf. 2 16032 (2016)

Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet

Authors: E. Kawakami, T. Jullien, P. Scarlino, D. R. Ward, D. E. Savage, M. G. Lagally, V. V. Dobrovitski, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from… ▽ More The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in substrate. The coherence time measured using dynamical decoupling extends up to $\approx$ 400 $μ$s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10 kHz $-$ 1 MHz range, possibly because charge noise affecting the spin via the micromagnet gradient. This work shows that an electron spin in a Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification. △ Less

Submitted 26 February, 2016; originally announced February 2016.

Journal ref: PNAS 2016 113 (42) 11738-11743

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

Authors: T. J. Knapp, R. T. Mohr, Yize Stephanie Li, Brandur Thorgrimsson, Ryan H. Foote, Xian Wu, Daniel R. Ward, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, m… ▽ More We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field. △ Less

Submitted 29 October, 2015; originally announced October 2015.

Comments: 9 pages, 4 figures

Journal ref: Nanotechnology 27, 154002 (2016)