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Direct observation of phase change accommodating hydrogen uptake in bimetallic nanoparticles
Authors:
Livia P. Matte,
Maximilian Jaugstetter,
Tara P. Mishra,
Carlos Escudero,
Giuseppina Conti,
Slavomir Nemsak,
Fabiano Bernardi
Abstract:
Hydrogen is a promising alternative to fossil fuel, however storing it efficiently poses challenges. One promising solution is to adsorb hydrogen on solid materials demonstrating quasi-molecular bonding with hydrogen. The hydrogen adsorption energy can be tuned by changing the morphology or stoichiometry of bimetallic nanoparticles. Here we used complementary techniques to unveil the chemical comp…
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Hydrogen is a promising alternative to fossil fuel, however storing it efficiently poses challenges. One promising solution is to adsorb hydrogen on solid materials demonstrating quasi-molecular bonding with hydrogen. The hydrogen adsorption energy can be tuned by changing the morphology or stoichiometry of bimetallic nanoparticles. Here we used complementary techniques to unveil the chemical compositional and morphological transformation undergone by PdxNi100-x nanoparticles during H2 adsorption. Our findings reveal NiO-rich shell and Pd-rich core as confirmed by X-ray photoelectron spectroscopy, X-ray scattering, and electron energy loss spectroscopy. During hydrogen adsorption, which mainly occurs on Pd atoms, the Pd-rich core fragments into small pockets, increasing its surface area. This process is more pronounced for nanoparticles with lower Pd loading, emphasizing the role of NiO. These results shed light on the atomic changes occurring in the PdxNi100-x nanoparticles during hydrogen adsorption and can be applicable on multi-metallic systems to improve hydrogen storage properties.
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Submitted 10 June, 2024;
originally announced June 2024.
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Absence of strong magnetic fluctuations or interactions in the normal state of LaNiGa$_2$
Authors:
P. Sherpa,
I. Vinograd,
Y. Shi,
S. A. Sreedhar,
C. Chaffey,
T. Kissikov,
M. -C. Jung,
A. S. Bontana,
A. P. Dioguardi,
R. Yamamoto,
M. Hirata,
G. Conti,
S. Nemsak,
J. R. Badger,
P. Klavins,
I. Vishik,
V. Taufour,
N. J. Curro
Abstract:
We present nuclear magnetic (NMR) and qudrupole (NQR) resonance and magnetization data in the normal state of the topological crystalline superconductor LaNiGa$_2$. We find no evidence of magnetic fluctuations or enhanced paramagnetism. These results suggest that the time-reversal symmetry breaking previously reported in the superconducting state of this material is not driven by strong electron c…
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We present nuclear magnetic (NMR) and qudrupole (NQR) resonance and magnetization data in the normal state of the topological crystalline superconductor LaNiGa$_2$. We find no evidence of magnetic fluctuations or enhanced paramagnetism. These results suggest that the time-reversal symmetry breaking previously reported in the superconducting state of this material is not driven by strong electron correlations.
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Submitted 12 November, 2023;
originally announced November 2023.
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Optimizing fog harvesting by biomimicry
Authors:
J. C. Fernandez Toledano,
C. Fagniart,
G. Conti,
J. De Coninck,
F. Dunlop,
Th. Huillet
Abstract:
Inspired by the stenocara beetle, we study an ideal flat surface composed of a regular array of hydrophilic circular patches in a hydrophobic matrix on an incline of tilt $α$ with respect to the horizontal. Based on an exact solution of the Laplace-Young equation at first order in the Bond number, the liquid storage capacity of the surface is maximized as function of the patch radius, for suitable…
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Inspired by the stenocara beetle, we study an ideal flat surface composed of a regular array of hydrophilic circular patches in a hydrophobic matrix on an incline of tilt $α$ with respect to the horizontal. Based on an exact solution of the Laplace-Young equation at first order in the Bond number, the liquid storage capacity of the surface is maximized as function of the patch radius, for suitable ranges of hydrophilic and hydrophobic contact angles, for tilt angles such as $45^{\circ}$ or $90^\circ$. It is found that the optimal radius equally prevents dewetting from the top of the patches and overflow at the bottom. These theoretical considerations are validated by several experiments for the glass/octadecyltrichlorosilane (OTS) system involving different patch sizes and different inclinations. In a simple dynamical model, taking into account the flux of fog onto the surface or condensation on a suitably cooled surface, we find that the conditions for maximum harvest agree with the ones of maximum static storage. The method could be developed for drop storage and drop transport applications such as water-harvesting systems.
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Submitted 9 March, 2022;
originally announced March 2022.
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Emergent phenomena at oxide interfaces studied with standing-wave photoelectron spectroscopy
Authors:
C. -T. Kuo,
G. Conti,
J. E. Rault,
C. M. Schneider,
S. Nemšák,
A. X. Gray
Abstract:
Emergent phenomena at complex-oxide interfaces have become a vibrant field of study in the past two decades due to the rich physics and a wide range of possibilities for creating new states of matter and novel functionalities for potential devices. Electronic-structural characterization of such phenomena presents a unique challenge due to the lack of direct yet non-destructive techniques for probi…
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Emergent phenomena at complex-oxide interfaces have become a vibrant field of study in the past two decades due to the rich physics and a wide range of possibilities for creating new states of matter and novel functionalities for potential devices. Electronic-structural characterization of such phenomena presents a unique challenge due to the lack of direct yet non-destructive techniques for probing buried layers and interfaces with the required Angstrom-level resolution, as well as element and orbital specificity. In this review article, we survey several recent studies wherein soft x-ray standing-wave photoelectron spectroscopy, a relatively newly developed technique, is used to investigate buried oxide interfaces exhibiting emergent phenomena such as metal-insulator transition, interfacial ferromagnetism, and two-dimensional electron gas. Advantages, challenges, and future applications of this methodology are also discussed.
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Submitted 27 October, 2021;
originally announced October 2021.
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Orbital contributions in the element-resolved valence electronic structure of Bi2Se3
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Jean-Pascal Rueff,
Zhesheng Chen,
Irene Aguilera,
Gustav Bihlmayer,
Lukasz Plucinski,
Ismael L. Graff,
Giuseppina Conti,
Ivan A. Vartanyants,
Claus M. Schneider,
Charles S. Fadley
Abstract:
In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Compariso…
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In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density functional theory (DFT) calculations (LDA and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
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Submitted 7 December, 2021; v1 submitted 3 August, 2021;
originally announced August 2021.
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High resolution depth profiling using near-total-reflection hard X-ray photoelectron spectroscopy
Authors:
Julien E. Rault,
Cheng-Tai Kuo,
Henrique P. Martins,
Giuseppina Conti,
Slavomir Nemšák
Abstract:
By adjusting the incidence angle of incoming X-ray near the critical angle of X-ray total reflection, the photoelectron intensity is strongly modulated due to the variation of X-ray penetration depth. Photoelectron spectroscopy (PES) combining with near total reflection (NTR) exhibit tunable surface sensitivity, providing depth-resolved information. In this review article, we first describe the ex…
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By adjusting the incidence angle of incoming X-ray near the critical angle of X-ray total reflection, the photoelectron intensity is strongly modulated due to the variation of X-ray penetration depth. Photoelectron spectroscopy (PES) combining with near total reflection (NTR) exhibit tunable surface sensitivity, providing depth-resolved information. In this review article, we first describe the experimental setup and specific data analysis process. We then review three different examples which show the broad application of this method. The emphasis is on its applications to correlated oxide heterostructures, especially quantitative depth analyses of compositions and electronic states. In a last part, we discussed the limitations of this technique, mostly in terms of range of samples which can be studied.
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Submitted 17 September, 2021; v1 submitted 14 July, 2021;
originally announced July 2021.
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Hard x-ray standing-wave photoemission study of the interfaces in a BiFeO$_3$/La$_{0.7}$Sr$_{0.3}$MnO$_3$ superlattice
Authors:
H. P. Martins,
S. A. Khan,
G. Conti,
A. A. Greer,
A. Y. Saw,
G. K. Palsson,
M. Huijben,
K. Kobayashi,
S. Ueda,
C. M. Schneider,
I. M. Vishik,
J. Minár,
A. X. Gray,
C. S. Fadley,
S. Nemšák
Abstract:
Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states.…
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Hybrid multiferroics such as BiFeO$_3$ (BFO) and La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO) heterostructures are highly interesting functional systems due to their complex electronic and magnetic properties. One of the key parameters influencing the emergent properties is the quality of interfaces, where varying interdiffusion lengths can give rise to different chemistry and distinctive electronic states. Here we report high-resolution depth resolved chemical and electronic investigation of BFO/LSMO superlattice using standing-wave hard X-ray photoemission spectroscopy in the first-order Bragg as well as near-total-reflection geometry. Our results show that the interfaces of BFO on top of LSMO are atomically abrupt, while the LSMO on top of BFO interfaces show an interdiffusion length of around 1.2 unit cells. The two interfaces also exhibit different chemical gradients, with the BFO/LSMO interface being Sr-terminated by a spectroscopically distinctive high binding energy component in Sr 2p core-level spectra, which is spatially contained within 1 unit cell from the interface. From the electronic point of view, unique valence band features were observed for bulk-BFO, bulk-LSMO and their interfaces. Our X-ray optical analysis revealed a unique electronic signature at the BFO/LSMO interface, which we attribute to the coupling between those respective layers. Valence band decomposition based on the Bragg-reflection standing-wave measurement also revealed the band alignment between BFO and LSMO layers. Our work demonstrates that standing-wave hard x-ray photoemission is a reliable non-destructive technique for probing depth-resolved electronic structure of buried layers and interfaces with sub-unit-cell resolution. Equivalent investigations can be successfully applied to a broad class of material such as perovskite complex oxides with emergent interfacial phenomena.
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Submitted 14 December, 2020;
originally announced December 2020.
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Bulk Electronic Structure of Lanthanum Hexaboride (LaB6) by Hard X-ray Angle-Resolved Photoelectron Spectroscopy
Authors:
A. Rattanachata,
L. Nicolaï,
H. P. Martins,
G. Conti,
M. J. Verstraete,
M. Gehlmann,
S. Ueda,
K. Kobayashi,
I. Vishik,
C. M. Schneider,
C. S. Fadley,
A. X. Gray,
J. Minár,
S. Nemšák
Abstract:
In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter physics, and for their applications in advanced technological fields. Among these compounds, LaB$_6$ has a special place, being a traditional d-band metal without additional f- bands. In this paper we investigate the bulk electronic structure of LaB$_6$ using hard x-ray photoemissi…
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In the last decade rare-earth hexaborides have been investigated for their fundamental importance in condensed matter physics, and for their applications in advanced technological fields. Among these compounds, LaB$_6$ has a special place, being a traditional d-band metal without additional f- bands. In this paper we investigate the bulk electronic structure of LaB$_6$ using hard x-ray photoemission spectroscopy, measuring both core-level and angle-resolved valence-band spectra. By comparing La 3d core level spectra to cluster model calculations, we identify well-screened peak residing at a lower binding energy compared to the main poorly-screened peak; the relative intensity between these peaks depends on how strong the hybridization is between La and B atoms. We show that the recoil effect, negligible in the soft x-ray regime, becomes prominent at higher kinetic energies for lighter elements, such as boron, but is still negligible for heavy elements, such as lanthanum. In addition, we report the bulk-like band structure of LaB$_6$ determined by hard x-ray angle-resolved photoemission spectroscopy (HARPES). We interpret HARPES experimental results by the free-electron final-state calculations and by the more precise one-step photoemission theory including matrix element and phonon excitation effects. In addition, we consider the nature and the magnitude of phonon excitations in HARPES experimental data measured at different temperatures and excitation energies. We demonstrate that one step theory of photoemission and HARPES experiments provide, at present, the only approach capable of probing true bulk-like electronic band structure of rare-earth hexaborides and strongly correlated materials.
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Submitted 6 January, 2021; v1 submitted 4 December, 2020;
originally announced December 2020.
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Two-dimensional electron systems in perovskite oxide heterostructures: Role of the polarity-induced substitutional defects
Authors:
Shih-Chieh Lin,
Cheng-Tai Kuo,
Yu-Cheng Shao,
Yi-De Chuang,
Jaap Geessinck,
Mark Huijben,
Jean-Pascal Rueff,
Ismael L. Graff,
Giuseppina Conti,
Yingying Peng,
Aaron Bostwick,
Eli Rotenberg,
Eric Gullikson,
Slavomír Nemšák,
Arturas Vailionis,
Nicolas Gauquelin,
Johan Verbeeck,
Giacomo Ghiringhelli,
Claus M. Schneider,
Charles S. Fadley
Abstract:
The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a c…
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The discovery of a two-dimensional electron system (2DES) at the interfaces of perovskite oxides such as LaAlO3 and SrTiO3 has motivated enormous efforts in engineering interfacial functionalities with this type of oxide heterostructures. However, its fundamental origins are still not understood, e.g. the microscopic mechanisms of coexisting interface conductivity and magnetism. Here we report a comprehensive spectroscopic investigation of the depth profile of 2DES-relevant Ti 3d interface carriers using depth- and element-specific techniques, standing-wave excited photoemission and resonant inelastic scattering. We found that one type of Ti 3d interface carriers, which give rise to the 2DES are located within 3 unit cells from the n-type interface in the SrTiO3 layer. Unexpectedly, another type of interface carriers, which are polarity-induced Ti-on-Al antisite defects, reside in the first 3 unit cells of the opposing LaAlO3 layer (~10 Å). Our findings provide a microscopic picture of how the localized and mobile Ti 3d interface carriers distribute across the interface and suggest that the 2DES and 2D magnetism at the LaAlO3/SrTiO3 interface have disparate explanations as originating from different types of interface carriers.
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Submitted 29 October, 2020; v1 submitted 21 December, 2019;
originally announced December 2019.
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Hard x-ray standing-wave photoemission insights into the structure of an epitaxial Fe/MgO multilayer magnetic tunnel junction
Authors:
C. S. Conlon,
G. Conti,
S. Nemšák,
G. Palsson,
R. Moubah,
C. -T. Kuo,
M. Gehlmann,
J. Ciston,
J. Rault,
J. -P. Rueff,
F. Salmassi,
W. Stolte,
A. Rattanachata,
S. -C. Lin,
A. Keqi,
A. Saw,
B. Hjörvarsson,
C. S. Fadley
Abstract:
The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for…
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The Fe/MgO magnetic tunnel junction is a classic spintronic system, with current importance technologically, and interest for future innovation. The key magnetic properties are linked directly to the structure of hard-to-access buried interfaces, and the Fe and MgO components near the surface are unstable when exposed to air, making a deeper probing, non-destructive, in-situ measurement ideal for this system. We have thus applied hard x-ray photoemission spectroscopy (HXPS) and standing-wave (SW) HXPS in the few keV energy range to probe the structure of an epitaxially-grown MgO/Fe superlattice. The superlattice consists of 9 repeats of MgO grown on Fe by magnetron sputtering on an MgO (001) substrate, with a protective Al2O3 cap** layer. We determine through SW-HXPS that 8 of the 9 repeats are similar and ordered, with a period of 33 $\pm$ 4 angstrom, with minor presence of FeO at the interfaces and a significantly distorted top bilayer with ca. 3 times the oxidation of the lower layers at the top MgO/Fe interface. There is evidence of asymmetrical oxidation on the top and bottom of the Fe layers. We find agreement with dark-field scanning transmission electron microscope (STEM) and x-ray reflectivity measurements. Through the STEM measurements we confirm an overall epitaxial stack with dislocations and war** at the interfaces of ca. 5 angstrom. We also note a distinct difference in the top bilayer, especially MgO, with possible Fe inclusions. We thus demonstrate that SW-HXPS can be used to probe deep buried interfaces of novel magnetic devices with few angstrom precision.
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Submitted 25 June, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
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Characterization of free standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy
Authors:
G. Conti,
S. Nemšák,
C. -T. Kuo,
M. Gehlmann,
C. Conlon,
A. Keqi,
A. Rattanachata,
O. Karslıoğlu,
J. Mueller,
J. Sethian,
H. Bluhm,
J. E. Rault,
J. P. Rueff,
H. Fang,
A. Javey,
C. S. Fadley
Abstract:
Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By co…
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Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We determined that: i) the exposure to air induced the formation of an InAsO$_4$ layer on top of the stoichiometric InAs(QM); ii) the top interface between the air-side InAsO$_4$ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; iii) the bottom interface between the InAs(QM) and the native oxide SiO$_2$ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO$_2$/(Si/Mo) substrate was determined by HXPS. The value of $VBO = 0.2 \pm 0.04$ eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO$_2$ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.
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Submitted 16 January, 2018;
originally announced January 2018.
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Atomic-layer-resolved composition and electronic structure of the cuprate Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ from soft x-ray standing-wave photoemission
Authors:
Cheng-Tai Kuo,
Shih-Chieh Lin,
Giuseppina Conti,
Shu-Ting Pi,
Luca Moreschini,
Aaron Bostwick,
Julia Meyer-Ilse,
Eric Gullikson,
Jeffrey B. Kortright,
Slavomir Nemšák,
Julien E. Rault,
Patrick Le Fèvre,
François Bertran,
Andrés F. Santander-Syro,
Ivan A. Vartanyants,
Warren E. Pickett,
Romuald Saint-Martin,
Amina Taleb,
Charles S. Fadley
Abstract:
A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties…
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A major remaining challenge in the superconducting cuprates is the unambiguous differentiation of the composition and electronic structure of the CuO$_2$ layers and those of the intermediate layers. The large c axis for these materials permits employing soft x-ray (930.3 eV) standing wave (SW) excitation in photoemission that yields atomic layer-by-atomic layer depth resolution of these properties. Applying SW photoemission to Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ yields the depth distribution of atomic composition and the layer-resolved densities of states. We detect significant Ca presence in the SrO layers and oxygen bonding to three different cations. The layer-resolved valence electronic structure is found to be strongly influenced by the supermodulation structure--as determined by comparison to DFT calculations, by Ca-Sr intermixing, and by the Cu 3d-3d Coulomb interaction, further clarifying the complex interactions in this prototypical cuprate. Measurements of this type for other quasi-two-dimensional materials with large-c represent a promising future direction.
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Submitted 24 September, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
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Electronic Structure of the Dilute Magnetic Semiconductor $Ga_{1-x}Mn_xP$ from Hard X-ray Photoelectron Spectroscopy and Hard X-ray Angle-Resolved Photoemission
Authors:
Armela Keqi,
Mathias Gehlmann,
Giuseppina Conti,
Slavomir Nemšák,
Arunothai Rattanachata,
Jan Minár,
Lukasz Plucinski,
Julien E Rault,
Jean-Pascal Rueff,
Mike Scarpulla,
Mihael Hategan,
Gunnar K Pálsson,
Catherine Conlon,
Daria Eiteneer,
Alexander Y Saw,
Alexander X Gray,
Keisuke Kobayashi,
Shigenori Ueda,
Oscar D Dubon,
Claus M Schneider,
Charles S Fadley
Abstract:
We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to und…
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We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) $Ga_{0.98}Mn_{0.02}P$ and compared it to that of an undoped $GaP$ reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between $Ga_{0.98}Mn_{0.02}P$ and $GaP$ in both angle-resolved and angle-integrated valence spectra. The $Ga_{0.98}Mn_{0.02}P$ bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host $GaP$ crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of $Ga_{0.97}Mn_{0.03}As$ and $GaAs$ (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in do** both $GaAs$ and $GaP$.
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Submitted 14 January, 2018;
originally announced January 2018.
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Superconductor to Mott insulator transition in YBa$_2$Cu$_3$O$_7$/LaCaMnO$_3$ heterostructures
Authors:
B. A. Gray,
S. Middey,
G. Conti,
A. X. Gray,
C. -T. Kuo,
A. M. Kaiser,
S. Ueda,
K. Kobayashi,
D. Meyers,
M. Kareev,
I. C. Tung,
Jian Liu,
C. S. Fadley,
J. Chakhalian,
J. W. Freeland
Abstract:
The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high $T_c$ superconductor…
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The superconductor-to-insulator transition (SIT) induced by means such as external magnetic fields, disorder or spatial confinement is a vivid illustration of a quantum phase transition dramatically affecting the superconducting order parameter. In pursuit of a new realization of the SIT by interfacial charge transfer, we developed extremely thin superlattices composed of high $T_c$ superconductor YBa$_2$Cu$_3$O$_7$ (YBCO) and colossal magnetoresistance ferromagnet La$_{0.67}$Ca$_{0.33}$MnO$_3$ (LCMO). By using linearly polarized resonant X-ray absorption spectroscopy and magnetic circular dichroism, combined with hard X-ray photoelectron spectroscopy, we derived a complete picture of the interfacial carrier do** in cuprate and manganite atomic layers, leading to the transition from superconducting to an unusual Mott insulating state emerging with the increase of LCMO layer thickness. In addition, contrary to the common perception that only transition metal ions may response to the charge transfer process, we found that charge is also actively compensated by rare-earth and alkaline-earth metal ions of the interface. Such deterministic control of $T_c$ by pure electronic do** without any hindering effects of chemical substitution is another promising route to disentangle the role of disorder on the pseudo-gap and charge density wave phases of underdoped cuprates.
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Submitted 15 August, 2016;
originally announced August 2016.
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Accurate determination of the valence band edge in hard x-ray photoemission spectra using GW theory
Authors:
Johannes Lischner,
Slavomir Nemsak,
Giuseppina Conti,
Andrei Gloskovskii,
Gunnar Karl Palsson,
Claus M. Schneider,
Wolfgang Drube,
Steven G. Louie,
Charles Fadley
Abstract:
We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray ph…
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We introduce a new method for determining accurate values of the valence-band maximum in x-ray photoemission spectra. Specifically, we align the sharpest peak in the valence-band region of the experimental spectrum with the corresponding feature of a theoretical valence-band density of states curve from ab initio GW theory calculations. This method is particularly useful for soft and hard x-ray photoemission studies of materials with a mixture of valence-band characters, where strong matrix element effects can render standard methods for extracting the valence-band maximum unreliable. We apply our method to hydrogen-terminated boron-doped diamond, which is a promising substrate material for novel solar cell devices. By carrying out photoemission experiments with variable light polarizations, we verify the accuracy of our analysis and the general validity of the method.
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Submitted 18 April, 2016;
originally announced April 2016.
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Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO$_3$/SrTiO$_3$ Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission
Authors:
D. Eiteneer,
G. K. Pálsson,
S. Nemšák,
A. X. Gray,
A. M. Kaiser,
J. Son,
J. LeBeau,
G. Conti,
A. A. Greer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
E. Rotenberg,
E. M. Gullikson,
S. Ueda,
K. Kobayashi,
A. Janotti,
C. G. Van de Walle,
A. Blanca-Romero,
R. Pentcheva,
C. M. Schneider,
S. Stemmer,
C. S. Fadley
Abstract:
LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understan…
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LaNiO$_3$ (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO$_3$ (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d eg and t2g states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La$_{0.7}$Sr$_{0.3}$MnO$_3$/SrTiO$_3$ superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our conclusions are also supported in several ways by comparison to DFT calculations for the parent materials and the superlattice, including layer-resolved density-of-states results.
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Submitted 27 May, 2016; v1 submitted 22 October, 2015;
originally announced October 2015.
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Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO$_3$ embedded in GdTiO$_3$
Authors:
S. Nemšák,
G. Conti,
G. K. Pálsson,
C. Conlon,
S. Cho,
J. Rault,
J. Avila,
M. -C. Asensio,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
L. Balents,
C. M. Schneider,
S. Stemmer,
C. S. Fadley`
Abstract:
For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)…
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For certain conditions of layer thickness, the interface between GdTiO$_3$ (GTO) and SrTiO$_3$ (STO) in multilayer samples has been found to form a two-dimensional electron gas (2DEG) with very interesting properties including high mobilities and ferromagnetism. We have here studied two trilayer samples of the form [2 nm GTO/1.0 or 1.5 unit cells STO/10 nm GTO] as grown on (001) (LaAlO$_3$)$_{0.3}$(Sr$_2$AlTaO$_6$)$_{0.7}$ (LSAT), with the STO layer thicknesses being at what has been suggested is the critical thickness for 2DEG formation. We have studied these with Ti-resonant angle-resolved (ARPES) and angle-integrated photoemission and find that the spectral feature in the spectra associated with the 2DEG is present in the 1.5 unit cell sample, but not in the 1.0 unit cell sample. We also observe through core-level spectra additional states in Ti and Sr, with the strength of a low-binding-energy state for Sr being associated with the appearance of the 2DEG, and we suggest it to have an origin in final-state core-hole screening.
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Submitted 20 November, 2015; v1 submitted 13 August, 2015;
originally announced August 2015.
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Energetic, spatial and momentum character of a buried interface: the two-dimensional electron gas between two metal oxides
Authors:
S. Nemšák,
G. Conti,
A. X. Gray,
G. K. Pálsson,
C. Conlon,
D. Eiteneer,
A. Keqi,
A. Rattanachata,
A. Y. Saw,
A. Bostwick,
L. Moreschini,
V. Strocov,
M. Kobayashi,
W. Stolte,
S. Ueda,
K. Kobayashi,
A. Gloskovskii,
W. Drube,
C. Jackson,
P. Moetakef,
A. Janotti,
L. Bjaalie,
B. Himmetoglu,
C. G. Van de Walle,
S. Borek
, et al. (10 additional authors not shown)
Abstract:
The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consist…
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The interfaces between two condensed phases often exhibit emergent physical properties that can lead to new physics and novel device applications, and are the subject of intense study in many disciplines. We here apply novel experimental and theoretical techniques to the characterization of one such interesting interface system: the two-dimensional electron gas (2DEG) formed in multilayers consisting of SrTiO$_3$ (STO) and GdTiO$_3$ (GTO). This system has been the subject of multiple studies recently and shown to exhibit very high carrier charge densities and ferromagnetic effects, among other intriguing properties. We have studied a 2DEG-forming multilayer of the form [6 unit cells STO/3 unit cells of GTO]$_{20}$ using a unique array of photoemission techniques including soft and hard x-ray excitation, soft x-ray angle-resolved photoemission, core-level spectroscopy, resonant excitation, and standing-wave effects, as well as theoretical calculations of the electronic structure at several levels and of the actual photoemission process. Standing-wave measurements below and above a strong resonance have been introduced as a powerful method for studying the 2DEG depth distribution. We have thus characterized the spatial and momentum properties of this 2DEG with unprecedented detail, determining via depth-distribution measurements that it is spread throughout the 6 u.c. layer of STO, and measuring the momentum dispersion of its states. The experimental results are supported in several ways by theory, leading to a much more complete picture of the nature of this 2DEG, and suggesting that oxygen vacancies are not the origin of it. Similar multi-technique photoemission studies of such states at buried interfaces, combined with comparable theory, will be a very fruitful future approach for exploring and modifying the fascinating world of buried-interface physics and chemistry.
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Submitted 9 March, 2016; v1 submitted 7 August, 2015;
originally announced August 2015.
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Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
Authors:
Hui Fang,
Corsin Battaglia,
Carlo Carraro,
Slavomir Nemsak,
Burak Ozdol,
Jeong Seuk Kang,
Hans A. Bechtel,
Sujay B. Desai,
Florian Kronast,
Ahmet A. Unal,
Giuseppina Conti,
Catherine Conlon,
Gunnar K. Palsson,
Michael C. Martin,
Andrew M. Minor,
Charles S. Fadley,
Eli Yablonovitch,
Roya Maboudian,
Ali Javey
Abstract:
Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures,…
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Semiconductor heterostructures are the fundamental platform for many important device applications such as lasers, light-emitting diodes, solar cells and high-electron-mobility transistors. Analogous to traditional heterostructures, layered transition metal dichalcogenide (TMDC) heterostructures can be designed and built by assembling individual single-layers into functional multilayer structures, but in principle with atomically sharp interfaces, no interdiffusion of atoms, digitally controlled layered components and no lattice parameter constraints. Nonetheless, the optoelectronic behavior of this new type of van der Waals (vdW) semiconductor heterostructure is unknown at the single-layer limit. Specifically, it is experimentally unknown whether the optical transitions will be spatially direct or indirect in such hetero-bilayers. Here, we investigate artificial semiconductor heterostructures built from single layer WSe2 and MoS2 building blocks. We observe a large Stokes-like shift of ~100 meV between the photoluminescence peak and the lowest absorption peak that is consistent with a type II band alignment with spatially direct absorption but spatially indirect emission. Notably, the photoluminescence intensity of this spatially indirect transition is strong, suggesting strong interlayer coupling of charge carriers. The coupling at the hetero-interface can be readily tuned by inserting hexagonal BN (h-BN) dielectric layers into the vdW gap. The generic nature of this interlayer coupling consequently provides a new degree of freedom in band engineering and is expected to yield a new family of semiconductor heterostructures having tunable optoelectronic properties with customized composite layers.
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Submitted 14 April, 2014; v1 submitted 15 March, 2014;
originally announced March 2014.
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Momentum-resolved electronic structure at a buried interface from soft x-ray standing-wave angle-resolved photoemission
Authors:
A. X. Gray,
J. Minár,
L. Plucinski,
M. Huijben,
A. Bostwick,
E. Rotenberg,
S. -H. Yang,
J. Braun,
A. Winkelmann,
G. Conti,
D. Eiteneer,
A. Rattanachata,
A. A. Greer,
J. Ciston,
C. Ophus,
G. Rijnders,
D. H. A. Blank,
D. Doennig,
R. Pentcheva,
C. M. Schneider,
H. Ebert,
C. S. Fadley
Abstract:
Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x-ray standing-wave (SW) excitation (SWARPES), in which the SW profile is scanned through the depth of the sample. We have studied the buried interface…
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Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x-ray standing-wave (SW) excitation (SWARPES), in which the SW profile is scanned through the depth of the sample. We have studied the buried interface in a prototypical magnetic tunnel junction La0.7Sr0.3MnO3/SrTiO3. Depth- and momentum-resolved maps of Mn 3d eg and t2g states from the central, bulk-like and interface-like regions of La0.7Sr0.3MnO3 exhibit distinctly different behavior consistent with a change in the Mn bonding at the interface. We compare the experimental results to state-of-the-art density-functional and one-step photoemission theory, with encouraging agreement that suggests wide future applications of this technique.
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Submitted 8 September, 2013;
originally announced September 2013.
