Showing 1–50 of 79 results for author: Coletti, C

Rapid synthesis of uniformly small nickel nanoparticles for the surface functionalization of epitaxial graphene

Authors: Ylea Vlamidis, Stiven Forti, Antonio Rossi, Carmela Marinelli, Camilla Coletti, Stefan Heun, Stefano Veronesi

Abstract: Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a cap** agent, and are extensively characterized by dynamic light scattering (DLS), scanning el… ▽ More Nickel nanoparticles (Ni NPs), thanks to their peculiar properties, are interesting materials for many applications including catalysis, hydrogen storage, and sensors. In this work, Ni NPs are synthesized in aqueous solution by a simple and rapid procedure with cetyltrimethylammonium bromide (CTAB) as a cap** agent, and are extensively characterized by dynamic light scattering (DLS), scanning electron microscopy (SEM), and atomic force microscopy (AFM). We investigated their shape, dimension, and their distribution on the surfaces of SiO2 and epitaxial graphene (EG) samples. Ni NPs have an average diameter of ~11 nm, with a narrow size dispersion, and their arrangement on the surface is strongly dependent on the substrate. EG samples functionalized with Ni NPs are further characterized by X-ray photoelectron spectroscopy (XPS), as made and after thermal annealing above 350°C to confirm the degradation of CTAB and the presence of metallic Ni(0). Moreover, high resolution scanning tunneling microscopy (STM) topographies reveal the structural stability of the NPs up to 550 °C. △ Less

Submitted 1 July, 2024; originally announced July 2024.

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Authors: Alex Boschi, Zewdu M. Gebeyehu, Sergey Slizovskiy, Vaidotas Mišeikis, Stiven Forti, Antonio Rossi, Kenji Watanabe, Takashi Taniguchi, Fabio Beltram, Vladimir I. Fal'ko, Camilla Coletti, Sergio Pezzini

Abstract: Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric t… ▽ More Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers' potential energy is broken, usually, via a large electric field applied in double-gate devices. Here, we introduce an asymmetric twistronic stack comprising both MLG and BLG, synthesized via low-pressure chemical vapor deposition (LP-CVD) on Cu. Although a large ($\sim30^{\circ}$) twist angle decouples the MLG and BLG electronic bands near Fermi level, we find that the layer degeneracy in the BLG subsystem is lifted, producing a gap in the absence of external fields. The built-in interlayer asymmetry originates from proximity-induced energy shifts in the outermost layers and requires a displacement field of $0.14$ V/nm to be compensated. The latter corresponds to a $\sim10$ meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers. △ Less

Submitted 7 June, 2024; originally announced June 2024.

Comments: 23 pages, 4 figures and supporting information

k-resolved ultrafast light-induced band renormalization in monolayer WS$_2$ on graphene

Authors: Niklas Hofmann, Alexander Steinhoff, Razvan Krause, Neeraj Mishra, Giorgio Orlandini, Stiven Forti, Camilla Coletti, Tim O. Wehling, Isabella Gierz

Abstract: Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In… ▽ More Understanding and controlling the electronic properties of two-dimensional materials is crucial for their potential applications in nano- and optoelectronics. Monolayer transition metal dichalcogenides such as WS$_2$ have garnered significant interest due to their strong light-matter interaction and extreme sensitivity of the band structure to the presence of photogenerated electron-hole pairs. In this study, we investigate the transient electronic structure of monolayer WS$_2$ on a graphene substrate after resonant excitation of the A-exciton using time- and angle-resolved photoemission spectroscopy. We observe a pronounced band structure renormalization including a substantial reduction of the transient band gap that is in good quantitative agreement with our {\it ab initio} theory that reveals the importance of both intrinsic WS$_2$ and extrinsic substrate contributions to the transient band structure of monolayer WS$_2$. Our findings not only deepen the fundamental understanding of band structure dynamics in two-dimensional materials but also offer valuable insights for the development of novel electronic and optoelectronic devices based on monolayer TMDs and their heterostructures with graphene. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Comments: 17 pages, 4 figures

Non-equilibrium carrier dynamics and band structure of graphene on 2D tin

Authors: Maria-Elisabeth Federl, Niklas Witt, Biao Yang, Niklas Hofmann, Johannes Gradl, Leonard Weigl, Ignacio Piquero-Zulaica, Johannes V. Barth, Neeraj Mishra, Camilla Coletti, Tim O. Wehling, Isabella Gierz

Abstract: Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inte… ▽ More Intercalation of epitaxial graphene on SiC(0001) with Sn results in a well-ordered 2D metallic Sn phase with a $(1\times1)$ structure at the interface between SiC substrate and quasi-freestanding graphene. The 2D\,Sn phase exhibits exotic electronic properties with Dirac-like and flat bands coexisting close to the Fermi level that exhibit both Zeeman- and Rashba-type spin splittings. Possible inter-layer interactions between the 2D\,Sn layer and graphene that may result in emerging electronic properties remain unexplored. We use time- and angle-resolved photoemission spectroscopy to reveal a surprisingly short-lived non-equilibrium carrier distribution inside the Dirac cone of graphene. Further, we find that the graphene $π$-band exhibits a transient down-shift that we attribute to charging of the graphene layer with holes. We interpret our results with support from density functional theory calculations of the graphene - 2D\,Sn heterostructure that reveal a substantial hybridization between graphene $π$-band and Sn $p_z$-states that opens up a $\sim230$\,meV band gap inside the Dirac cone and delocalizes the charge carriers over both the graphene and 2D\,Sn layers. Our results have important implications for the design of future ultrafast optoelectronic devices that may find applications in the fields of light harvesting and detection, as supercapacitors, or in novel quantum computing technologies. △ Less

Submitted 2 May, 2024; originally announced May 2024.

Comments: 19 pages, 5 figures

Growth and applications of two-dimensional single crystals

Authors: Zhibin Zhang, Stiven Forti, Wanqing Meng, Sergio Pezzini, Zehua Hu, Camilla Coletti, Xinran Wang, Kaihui Liu

Abstract: Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisi… ▽ More Two-dimensional (2D) materials have received extensive research attentions over the past two decades due to their intriguing physical properties (such as the ultrahigh mobility and strong light-matter interaction at atomic thickness) and a broad range of potential applications (especially in the fields of electronics and optoelectronics). The growth of single-crystal 2D materials is the prerequisite to realize 2D-based high-performance applications. In this review, we aim to provide an in-depth analysis of the state-of-the-art technology for the growth and applications of 2D materials, with particular emphasis on single crystals. We first summarize the major growth strategies for monolayer 2D single crystals. Following that, we discuss the growth of multilayer single crystals, including the control of thickness, stacking sequence, and heterostructure composition. Then we highlight the exploration of 2D single crystals in electronic and optoelectronic devices. Finally, a perspective is given to outline the research opportunities and the remaining challenges in this field. △ Less

Submitted 13 October, 2023; v1 submitted 12 October, 2023; originally announced October 2023.

Journal ref: 2D Mater. 10 032001 (2023)

Platinum-Decorated Graphene: Experimental Insight into Growth Mechanisms and Hydrogen Adsorption Properties

Authors: Letizia Ferbel, Stefano Veronesi, Ylea Vlamidis, Antonio Rossi, Leonardo Sabattini, Camilla Coletti, Stefan Heun

Abstract: The potential of graphene for hydrogen storage, coupled with the established role of Platinum as a catalyst for the hydrogen evolution reaction and the spillover effect, makes Pt-functionalized graphene a promising candidate for near-ambient hydrogen storage. This paper focuses on examining the process of Pt cluster formation on epitaxial graphene and assesses the suitability of the system as hydr… ▽ More The potential of graphene for hydrogen storage, coupled with the established role of Platinum as a catalyst for the hydrogen evolution reaction and the spillover effect, makes Pt-functionalized graphene a promising candidate for near-ambient hydrogen storage. This paper focuses on examining the process of Pt cluster formation on epitaxial graphene and assesses the suitability of the system as hydrogen storage material. Scanning tunneling microscopy unveils two primary pathways for Pt cluster growth. In the initial phase, up to ~1 ML of Pt coverage, Pt tends to randomly disperse and cover the graphene surface, while the cluster height remains essentially unchanged. Beyond a coverage of 3 ML, the nucleation of new layers on existing clusters becomes predominant. Then, the clusters mainly grow in height. Thermal desorption spectroscopy on hydrogenated Pt-decorated graphene reveals the presence of multiple hydrogen adsorption mechanisms, manifested as two Gaussian peaks superimposed on a linearly increasing background. We attribute the first peak at 150°C to hydrogen physisorbed on the surface of Pt clusters. The second peak at 430°C is attributed to chemisorption of hydrogen on the surface of the clusters, while the linearly increasing background is assigned to hydrogen bonded in the bulk of the Pt clusters. These measurements demonstrate the ability of Pt-functionalized graphene to store molecular hydrogen at temperatures that are high enough for stable hydrogen binding at room temperature. △ Less

Submitted 27 September, 2023; originally announced September 2023.

Scalable High-Mobility Graphene/hBN Heterostructures

Authors: Leonardo Martini, Vaidotas Mišeikis, David Esteban, Jon Azpeitia, Sergio Pezzini, Paolo Paletti, Michał Ochapski, Domenica Convertino, Mar Hernandez, Ignacio Jimenez, Camilla Coletti

Abstract: Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available $SiO_2/Si$… ▽ More Graphene-hexagonal boron nitride (hBN) scalable heterostructures are pivotal for the development of graphene-based high-tech applications. In this work, we demonstrate the realization of high-quality graphene-hBN heterostructures entirely obtained with scalable approaches. hBN continuous films were grown via ion beam-assisted physical vapor deposition directly on commercially available $SiO_2/Si$ and used as receiving substrates for graphene single-crystal matrixes grown by chemical vapor deposition on copper. The structural, chemical, and electronic properties of the heterostructure were investigated by atomic force microscopy, Raman spectroscopy, and electrical transport measurements. We demonstrate graphene carrier mobilities exceeding $10,000 cm^2/Vs$ in ambient conditions, 30% higher than those directly measured on $SiO_{2}/Si$. We prove the scalability of our approach by measuring more than 100 transfer length method devices over a centimeter scale, which present an average carrier mobility of $7500 \pm 850 cm^{2}/Vs$. The reported high-quality all-scalable heterostructures are of relevance for the development of graphene-based high-performing electronic and optoelectronic applications. △ Less

Submitted 26 September, 2023; originally announced September 2023.

Journal ref: ACS Applied Matererials and Interfaces 2023, 15, 31, 3779-37801

Room temperature quantum Hall effect in a gated ferroelectric-graphene heterostructure

Authors: Anubhab Dey, Nathan Cottam, Oleg Makarovskiy, Wen**g Yan, Vaidotas Mišeikis, Camilla Coletti, James Kerfoot, Vladimir Korolkov, Laurence Eaves, Jasper F. Linnartz, Arwin Kool, Steffen Wiedmann, Amalia Patanè

Abstract: The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few hi… ▽ More The quantum Hall effect is widely used for the investigation of fundamental phenomena, ranging from topological phases to composite fermions. In particular, the discovery of a room temperature resistance quantum in graphene is significant for compact resistance standards that can operate above cryogenic temperatures. However, this requires large magnetic fields that are accessible only in a few high magnetic field facilities. Here, we report on the quantum Hall effect in graphene encapsulated by the ferroelectric insulator CuInP2S6. Electrostatic gating of the graphene channel enables the Fermi energy to be tuned so that electrons in the localized states of the insulator are in equilibrium with the current-carrying, delocalized states of graphene. Due to the presence of strongly bound states in this hybrid system, a quantum Hall plateau can be achieved at room temperature in relatively modest magnetic fields. This phenomenon offers the prospect for the controlled manipulation of the quantum Hall effect at room temperature. △ Less

Submitted 26 May, 2023; originally announced May 2023.

Comments: 24 pages, 6 figures

Link between interlayer hybridization and ultrafast charge transfer in WS$_2$-graphene heterostructures

Authors: Niklas Hofmann, Leonard Weigl, Johannes Gradl, Neeraj Mishra, Giorgio Orlandini, Stiven Forti, Camilla Coletti, Simone Latini, Lede Xian, Angel Rubio, Dilan Perez Paredes, Raul Perea Causin, Samuel Brem, Ermin Malic, Isabella Gierz

Abstract: Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed micros… ▽ More Ultrafast charge separation after photoexcitation is a common phenomenon in various van-der-Waals (vdW) heterostructures with great relevance for future applications in light harvesting and detection. Theoretical understanding of this phenomenon converges towards a coherent mechanism through charge transfer states accompanied by energy dissipation into strongly coupled phonons. The detailed microscopic pathways are material specific as they sensitively depend on the band structures of the individual layers, the relative band alignment in the heterostructure, the twist angle between the layers, and interlayer interactions resulting in hybridization. We used time- and angle-resolved photoemission spectroscopy combined with tight binding and density functional theory electronic structure calculations to investigate ultrafast charge separation and recombination in WS$_2$-graphene vdW heterostructures. We identify several avoided crossings in the band structure and discuss their relevance for ultrafast charge transfer. We relate our own observations to existing theoretical models and propose a unified picture for ultrafast charge transfer in vdW heterostructures where band alignment and twist angle emerge as the most important control parameters. △ Less

Submitted 21 March, 2023; originally announced March 2023.

Comments: 8 pages, 5 figures

Strong Coupling of Coherent Phonons to Excitons in Semiconducting Monolayer MoTe$_2$

Authors: Charles J. Sayers, Armando Genco, Chiara Trovatello, Stefano Dal Conte, Vladislav Khaustov, Jorge Cervantes-Villanueva, Davide Sangalli, Alejandro Molina-Sanchez, Camilla Coletti, Christoph Gadermaier, Giulio Cerullo

Abstract: The coupling of the electron system to lattice vibrations and their time-dependent control and detection provides unique insight into the non-equilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of semiconducting monolayer 2$H$-MoTe$_2$ encapsulated with $h$BN using broadband optical pump-probe microscopy. The sub-40-fs pump pulse triggers extremely intense… ▽ More The coupling of the electron system to lattice vibrations and their time-dependent control and detection provides unique insight into the non-equilibrium physics of semiconductors. Here, we investigate the ultrafast transient response of semiconducting monolayer 2$H$-MoTe$_2$ encapsulated with $h$BN using broadband optical pump-probe microscopy. The sub-40-fs pump pulse triggers extremely intense and long-lived coherent oscillations in the spectral region of the A' and B' exciton resonances, up to $\sim$20% of the maximum transient signal, due to the displacive excitation of the out-of-plane $A_{1g}$ phonon. Ab-initio calculations reveal a dramatic rearrangement of the optical absorption of monolayer MoTe$_2$ induced by an out-of-plane stretching and compression of the crystal lattice, consistent with an $A_{1g}$-type oscillation. Our results highlight the extreme sensitivity of the optical properties of monolayer TMDs to small structural modifications and their manipulation with light. △ Less

Submitted 15 February, 2023; originally announced February 2023.

Comments: 27 pages, 4 figures, supporting information

Journal ref: Nano Letters 2023 23 (20), 9235-9242

Probing enhanced electron-phonon coupling in graphene by infrared resonance Raman spectroscopy

Authors: Tommaso Venanzi, Lorenzo Graziotto, Francesco Macheda, Simone Sotgiu, Taoufiq Ouaj, Elena Stellino, Claudia Fasolato, Paolo Postorino, Vaidotas Mišeikis, Marvin Metzelaars, Paul Kögerler, Bernd Beschoten, Camilla Coletti, Stefano Roddaro, Matteo Calandra, Michele Ortolani, Christoph Stampfer, Francesco Mauri, Leonetta Baldassarre

Abstract: We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite.… ▽ More We report on resonance Raman spectroscopy measurements with excitation photon energy down to 1.16 eV on graphene, to study how low-energy carriers interact with lattice vibrations. Thanks to the excitation energy close to the Dirac point at $\mathbf{K}$, we unveil a giant increase of the intensity ratio between the double-resonant 2D and 2D$^\prime$ peaks with respect to that measured in graphite. Comparing with fully \textit{ab initio} theoretical calculations, we conclude that the observation is explained by an enhanced, momentum-dependent coupling between electrons and Brillouin zone-boundary optical phonons. This finding applies to two dimensional Dirac systems and has important consequences for the modeling of transport in graphene devices operating at room temperature. △ Less

Submitted 22 May, 2023; v1 submitted 2 December, 2022; originally announced December 2022.

Comments: 6 pages, 3 figures

Hydrogen spillover and storage on graphene with single-site Ti catalysts

Authors: Jhih-Wei Chen, Shang-Hsien Hsieh, Sheng-Shong Wong, Ya-Chi Chiu, Hung-Wei Shiu, Chia-Hsin Wang, Yaw-Wen Yang, Yao-Jane Hsu, Domenica Convertino, Camilla Coletti, Stefan Heun, Chia-Hao Chen, Chung-Lin Wu

Abstract: Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use synchrotron radiation-based methods to investigate the role of single-site Ti catalysts on graphene for hydrogen spillover and storage. Our in-situ angl… ▽ More Hydrogen spillover and storage for single-site metal catalysts, including single-atom catalysts (SACs) and single nanocluster catalysts, have been elucidated for various supports but remain poorly understood for inert carbon supports. Here, we use synchrotron radiation-based methods to investigate the role of single-site Ti catalysts on graphene for hydrogen spillover and storage. Our in-situ angle-resolved photoemission spectra results demonstrate a bandgap opening and the X-ray absorption spectra reveal the formation of C-H bonds, both indicating the partial graphene hydrogenation. With increasing Ti deposition and H2 exposure, the Ti atoms tend to aggregate to form nanocluster catalysts and yield 13.5% sp3-hybridized carbon atoms corresponding to a hydrogen-storage capacity of 1.11 wt% (excluding the weight of the Ti nanoclusters [1]). Our results demonstrate how a simple spillover process at Ti SACs can lead to covalent hydrogen bonding on graphene, thereby providing a strategy for a rational design of carbon-supported single-site catalysts. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Journal ref: ACS Energy Lett. 2022, 7, 2297-2303

Strain-engineered wrinkles on graphene using polymeric actuators

Authors: Davide Giambastiani, Cosimo Tommasi, Federica Bianco, Filippo Fabbri, Camilla Coletti, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility o… ▽ More The electronic and optical properties of graphene can be precisely tuned by generating deterministic arrangements of strain features. In this paper, we report the formation of widespread and controlled buckling delamination of monolayer graphene deposited on hexagonal boron-nitride promoted by a significant squeezing of the graphene flake and induced by polymeric micro-actuators. The flexibility of this method offers a promising technique to create arbitrary buckling geometries and arrays of wrinkles which could also be subjected to iterative folding-unfolding cycles. Further development of this method could pave the way to tune the properties of several kinds of other two-dimensional materials, such as transition metal dichalcogenides, by tailoring their surface topography. △ Less

Submitted 31 August, 2022; v1 submitted 21 May, 2022; originally announced June 2022.

Journal ref: Phys. Rev. Applied 18, 024069 (2022)

Moiré-Induced Transport in CVD-Based Small-Angle Twisted Bilayer Graphene

Authors: Giulia Piccinini, Vaidotas Mišeikis, Pietro Novelli, Kenji Watanabe, Takashi Taniguchi, Marco Polini, Camilla Coletti, Sergio Pezzini

Abstract: To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-unifor… ▽ More To realize the applicative potential of 2D twistronic devices, scalable synthesis and assembly techniques need to meet stringent requirements in terms of interface cleanness and twist-angle homogeneity. Here, we show that small-angle twisted bilayer graphene assembled from separated CVD-grown graphene single-crystals can ensure high-quality transport properties, determined by a device-scale-uniform moireé potential. Via low-temperature dual-gated magnetotransport, we demonstrate the hallmarks of a $2.4^\circ$ -twisted superlattice, including tunable regimes of interlayer coupling, reduced Fermi velocity, large interlayer capacitance, and density-independent Brown-Zak oscillations. The observation of these moiré-induced electrical transport features establishes CVD-based twisted bilayer graphene as an alternative to 'tear-and-stack' exfoliated flakes for fundamental studies, while serving as a proof-of-concept for future large-scale assembly. △ Less

Submitted 4 July, 2022; v1 submitted 29 March, 2022; originally announced March 2022.

Comments: This is the unedited authors' version of the submitted article, published in its final form on Nano Letters 2022 at https://pubs.acs.org/doi/full/10.1021/acs.nanolett.2c01114 , main text, 17 pages, 4 figures

Black Phosphorus n-type do** by Cu: a microscopic surface investigation

Authors: Abhishek Kumar, Francesca Telesio, Deborah Prezzi, Claudia Cardoso, Alessandra Catellani, Stiven Forti, Camilla Coletti, Manuel Serrano-Ruiz, Maurizio Peruzzini, Fabio Beltram, Stefan Heun

Abstract: We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential… ▽ More We study surface charge transfer do** of exfoliated black phosphorus (bP) flakes by copper using scanning tunneling microscopy (STM) and spectroscopy (STS) at room temperature. The tunneling spectra reveal a gap in correspondence of Cu islands, which is attributed to Coulomb blockade phenomena. Moreover, using line spectroscopic measurements across small copper islands, we exploit the potential of the local investigation, showing that the n-type do** effect of copper on bP is short-ranged. These experimental results are substantiated by first-principles simulations, which quantify the role of cluster size for an effective n-type do** of bP and explain the Coulomb blockade by an electronic decoupling of the topmost bP layer from the underlying layers driven by the copper cluster. Our results provide novel understanding, difficult to retrieve by transport measurements, of the do** of bP by copper, which appears promising for the implementation of ultra-sharp p-n junctions in bP. △ Less

Submitted 3 January, 2022; originally announced January 2022.

Journal ref: J. Phys. Chem. C 2021, 125, 13477-13484

Parallel transport and layer-resolved thermodynamic measurements in twisted bilayer graphene

Authors: Giulia Piccinini, Vaidotas Mišeikis, Kenji Watanabe, Takashi Taniguchi, Camilla Coletti, Sergio Pezzini

Abstract: We employ dual-gated 30°-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a simple phenomenology of parallel conduction between two pristine graphene sheets, with a gate-controlled carrier distribution. Based on the parallel transport mechanism… ▽ More We employ dual-gated 30°-twisted bilayer graphene to demonstrate simultaneous ultra-high mobility and conductivity (up to 40 mS at room temperature), unattainable in a single-layer of graphene. We find quantitative agreement with a simple phenomenology of parallel conduction between two pristine graphene sheets, with a gate-controlled carrier distribution. Based on the parallel transport mechanism, we then introduce a method for in situ measurements of the chemical potential of the two layers. This twist-enabled approach, neither requiring a dielectric spacer, nor separate contacting, has the potential to greatly simplify the measurement of thermodynamic quantities in graphene-based systems of high current interest. △ Less

Submitted 11 January, 2022; v1 submitted 14 September, 2021; originally announced September 2021.

Comments: This is the unedited authors' version of the submitted article, published in Phys. Rev. B 104, L241410 (2021), 23 pages, main text and supplementary information

Ultra-clean high-mobility graphene on technologically relevant substrates

Authors: Ayush Tyagi, Vaidotas Mišeikis, Leonardo Martini, Stiven Forti, Neeraj Mishra, Zewdu M. Gebeyehu, Marco A. Giambra, Jihene Zribi, Mathieu Frégnaux, Damien Aureau, Marco Romagnoli, Fabio Beltram, Camilla Coletti

Abstract: Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room te… ▽ More Graphene grown via chemical vapour deposition (CVD) on copper foil has emerged as a high-quality, scalable material, that can be easily integrated on technologically relevant platforms to develop promising applications in the fields of optoelectronics and photonics. Most of these applications require low-contaminated high-mobility graphene (i.e., approaching 10 000 $cm^2 V^{-1} s^{-1}$) at room temperature) to reduce device losses and implement compact device design. To date, these mobility values are only obtained when suspending or encapsulating graphene. Here, we demonstrate a rapid, facile, and scalable cleaning process, that yields high-mobility graphene directly on the most common technologically relevant substrate: silicon dioxide on silicon (SiO$_2$/Si). Atomic force microscopy (AFM) and spatially-resolved X-ray photoelectron spectroscopy (XPS) demonstrate that this approach is instrumental to rapidly eliminate most of the polymeric residues which remain on graphene after transfer and fabrication and that have adverse effects on its electrical properties. Raman measurements show a significant reduction of graphene do** and strain. Transport measurements of 50 Hall bars (HBs) yield hole mobility $μ_h$ up to 9000 $cm^2 V^{-1} s^{-1}$ and electron mobility $μ_e$ up to 8000 $cm^2 V^{-1} s^{-1}$, with average values $μ_h$ 7500 $cm^2 V^{-1} s^{-1}$ and $μ_e$ 6300 $cm^2 V^{-1} s^{-1}$. The carrier mobility of ultraclean graphene reach values nearly double of that measured in graphene HBs processed with acetone cleaning, which is the method widely adopted in the field. Notably, these mobility values are obtained over large-scale and without encapsulation, thus paving the way to the adoption of graphene in optoelectronics and photonics. △ Less

Submitted 1 September, 2021; originally announced September 2021.

Comments: 20 pages, 11 figures

Unexpected Electron Transport Suppression in a Heterostructures Graphene MoS2 Multiple Field-Effect Transistor Architecture

Authors: Gaia Ciampalini, Filippo Fabbri, Guido Menichetti, Luca Buoni, Simona Pace, Vaidotas Mišeikis, Alessandro Pitanti, Dario Pisignano, Camilla Coletti, Alessandro Tredicucci, Stefano Roddaro

Abstract: We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photolum… ▽ More We demonstrate a graphene-MoS2 architecture integrating multiple field-effect transistors and we independently probe and correlate the conducting properties of van der Waals coupled graphene-MoS2 contacts with the ones of the MoS2 channels. Devices are fabricated starting from high-quality single-crystal monolayers grown by chemical vapor deposition and characterized by scanning Raman and photoluminescence spectroscopies. Transconductance curves of MoS2 are compared with the current-voltage characteristics of graphene contact stripes, revealing a significant suppression of transport on the n-side of the transconductance curve. Based on ab-initio modeling, the effect is understood in terms of trap** by sulfur vacancies, which counter-intuitively depends on the field-effect, even though the graphene contact layer is positioned between the backgate and the MoS2 channel. △ Less

Submitted 19 January, 2022; v1 submitted 4 August, 2021; originally announced August 2021.

Hot-Carrier Cooling in High-Quality Graphene is Intrinsically Limited by Optical Phonons

Authors: Eva A. A. Pogna, Xiaoyu Jia, Alessandro Principi, Alexander Block, Luca Banszerus, **can Zhang, Xiaoting Liu, Thibault Sohier, Stiven Forti, Karuppasamy Soundarapandian, Bernat Terrés, Jake D. Mehew, Chiara Trovatello, Camilla Coletti, Frank H. L. Koppens, Mischa Bonn, Niek van Hulst, Matthieu J. Verstraete, Hailin Peng, Zhongfan Liu, Christoph Stampfer, Giulio Cerullo, Klaas-Jan Tielrooij

Abstract: Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the dif… ▽ More Many promising optoelectronic devices, such as broadband photodetectors, nonlinear frequency converters, and building blocks for data communication systems, exploit photoexcited charge carriers in graphene. For these systems, it is essential to understand, and eventually control, the cooling dynamics of the photoinduced hot-carrier distribution. There is, however, still an active debate on the different mechanisms that contribute to hot-carrier cooling. In particular, the intrinsic cooling mechanism that ultimately limits the cooling dynamics remains an open question. Here, we address this question by studying two technologically relevant systems, consisting of high-quality graphene with a mobility >10,000 cm$^2$V$^{-1}$s$^{-1}$ and environments that do not efficiently take up electronic heat from graphene: WSe$_2$-encapsulated graphene and suspended graphene. We study the cooling dynamics of these two high-quality graphene systems using ultrafast pump-probe spectroscopy at room temperature. Cooling via disorder-assisted acoustic phonon scattering and out-of-plane heat transfer to the environment is relatively inefficient in these systems, predicting a cooling time of tens of picoseconds. However, we observe much faster cooling, on a timescale of a few picoseconds. We attribute this to an intrinsic cooling mechanism, where carriers in the hot-carrier distribution with enough kinetic energy emit optical phonons. During phonon emission, the electronic system continuously re-thermalizes, re-creating carriers with enough energy to emit optical phonons. We develop an analytical model that explains the observed dynamics, where cooling is eventually limited by optical-to-acoustic phonon coupling. These fundamental insights into the intrinsic cooling mechanism of hot carriers in graphene will play a key role in guiding the development of graphene-based optoelectronic devices. △ Less

Submitted 5 March, 2021; originally announced March 2021.

On the survival of Floquet-Bloch states in the presence of scattering

Authors: S. Aeschlimann, S. A. Sato, R. Krause, M. Chávez-Cervantes, U. De Giovannini, H. Hübener, S. Forti, C. Coletti, K. Hanff, K. Rossnagel, A. Rubio, I. Gierz

Abstract: Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy… ▽ More Floquet theory has spawned many exciting possibilities for electronic structure control with light with enormous potential for future applications. The experimental realization in solids, however, largely remains pending. In particular, the influence of scattering on the formation of Floquet-Bloch states remains poorly understood. Here we combine time- and angle-resolved photoemission spectroscopy with time-dependent density functional theory and a two-level model with relaxation to investigate the survival of Floquet-Bloch states in the presence of scattering. We find that Floquet-Bloch states will be destroyed if scattering -- activated by electronic excitations -- prevents the Bloch electrons from following the driving field coherently. The two-level model also shows that Floquet-Bloch states reappear at high field intensities where energy exchange with the driving field dominates over energy dissipation to the bath. Our results clearly indicate the importance of long scattering times combined with strong driving fields for the successful realization of various Floquet phenomena. △ Less

Submitted 25 February, 2021; originally announced February 2021.

Comments: 27 pages, 5 figues

Microscopic understanding of ultrafast charge transfer in van-der-Waals heterostructures

Authors: R. Krause, S. Aeschlimann, M. Chavez-Cervantes, R. Perea-Causin, S. Brem, E. Malic, S. Forti, F. Fabbri, C. Coletti, I. Gierz

Abstract: Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined w… ▽ More Van-der-Waals heterostructures show many intriguing phenomena including ultrafast charge separation following strong excitonic absorption in the visible spectral range. However, despite the enormous potential for future applications in the field of optoelectronics, the underlying microscopic mechanism remains controversial. Here we use time- and angle-resolved photoemission spectroscopy combined with microscopic many-particle theory to reveal the relevant microscopic charge transfer channels in epitaxial WS$_2$/graphene heterostructures. We find that the timescale for efficient ultrafast charge separation in the material is determined by direct tunneling at those points in the Brillouin zone where WS$_2$ and graphene bands cross, while the lifetime of the charge separated transient state is set by defect-assisted tunneling through localized sulphur vacanices. The subtle interplay of intrinsic and defect-related charge transfer channels revealed in the present work can be exploited for the design of highly efficient light harvesting and detecting devices. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 37 pages, 16 figures

Thermal stability of monolayer $WS_2$ in BEOL conditions

Authors: Simona Pace, Marzia Ferrera, Domenica Convertino, Giulia Piccinini, Michele Magnozzi, Neeraj Mishra, Stiven Forti, Francesco Bisio, Maurizio Canepa, Filippo Fabbri, Camilla Coletti

Abstract: Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, th… ▽ More Monolayer tungsten disulfide ($WS_2$) has recently attracted large interest as a promising material for advanced electronic and optoelectronic devices such as photodetectors, modulators, and sensors. Since these devices can be integrated in a silicon (Si) chip via back-end-of-line (BEOL) processes, the stability of monolayer $WS_2$ in BEOL fabrication conditions should be studied. In this work, the thermal stability of monolayer single-crystal $WS_2$ at typical BEOL conditions is investigated; namely (i) heating temperature of $300$ $^\circ C$, (ii) pressures in the medium- ($10^{-3}$ mbar) and high- ($10^{-8}$ mbar) vacuum range; (iii) heating times from $30$ minutes to $20$ hours. Structural, optical and chemical analyses of $WS_2$ are performed via scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS). It is found that monolayer single-crystal $WS_2$ is intrinsically stable at these temperature and pressures, even after $20$ hours of thermal treatment. The thermal stability of $WS_2$ is also preserved after exposure to low-current electron beam ($12$ pA) or low-fluence laser ($0.9$ $mJ/μm^2$), while higher laser fluencies cause photo-activated degradation upon thermal treatment. These results are instrumental to define fabrication and in-line monitoring procedures that allow the integration of $WS_2$ in device fabrication flows without compromising the material quality. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 21 pages, 5 figures

Wafer-scale integration of graphene-based photonic devices

Authors: Marco A. Giambra, Vaidotas Mišeikis, Sergio Pezzini, Simone Marconi, Alberto Montanaro, Filippo Fabbri, Vito Sorianello, Andrea C. Ferrari, Camilla Coletti, Marco Romagnoli

Abstract: Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour depositi… ▽ More Graphene and related materials can lead to disruptive advances in next generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high (>5,000 cm2 V-1 s-1) mobility devices with reliable performance at the wafer scale. Here, we present a flow for the integration of graphene in photonics circuits. This relies on chemical vapour deposition (CVD) of single layer graphene (SLG) matrices comprising up to ~12000 individual single crystals (SCs), grown to match the geometrical configuration of the devices in the photonic circuit. This is followed by a transfer approach which guarantees coverage over ~80% of the device area, and integrity for up to 150 mm wafers, with room temperature mobility ~5000 cm2 V-1 s-1. We use this process flow to demonstrate double SLG electro-absorption modulators with modulation efficiency ~0.25, 0.45, 0.75, 1 dB V-1 for device lengths ~30, 60, 90, 120 μm. The data rate is up to 20 Gbps. Encapsulation with single-layer hBN is used to protected SLG during plasma-enhanced CVD of Si3N4, ensuring reproducible device performance. Our full process flow (from growth to device fabrication) enables the commercial implementation of graphene-based photonic devices. △ Less

Submitted 9 February, 2021; v1 submitted 18 November, 2020; originally announced December 2020.

Comments: 30 pages, 9 Figures

Tuning the do** of epitaxial graphene on a conventional semiconductor via substrate surface reconstruction

Authors: Miriam Galbiati, Luca Persichetti, Paola Gori, Olivia Pulci, Marco Bianchi, Luciana Di Gaspare, Jerry Tersoff, Camilla Coletti, Philip Hofmann, Monica De Seta, Luca Camilli

Abstract: Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the do** of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first principle calculations we build a model that successfully reproduces the experimental observations. Since the ab… ▽ More Combining scanning tunneling microscopy and angle-resolved photoemission spectroscopy, we demonstrate how to tune the do** of epitaxial graphene from p to n by exploiting the structural changes that occur spontaneously on the Ge surface upon thermal annealing. Furthermore, using first principle calculations we build a model that successfully reproduces the experimental observations. Since the ability to modify graphene electronic properties is of fundamental importance when it comes to applications, our results provide an important contribution towards the integration of graphene with conventional semiconductors. △ Less

Submitted 26 March, 2021; v1 submitted 16 October, 2020; originally announced October 2020.

Journal ref: The Journal of Physical Chemistry Letters 2021 12 (4), 1262-1267

Stress-strain in electron-beam activated polymeric micro-actuators

Authors: Davide Giambastiani, Fabio Dispinzeri, Francesco Colangelo, Stiven Forti, Camilla Coletti, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin fil… ▽ More Actuation of thin polymeric films via electron irradiation is a promising avenue to realize devices based on strain engineered two dimensional (2D) materials. Complex strain profiles demand a deep understanding of the mechanics of the polymeric layer under electron irradiation; in this article we report a detailed investigation on electron-induced stress on poly-methyl-methacrylate (PMMA) thin film material. After an assessment of stress values using a method based on dielectric cantilevers, we directly investigate the lateral shrinkage of PMMA patterns on epitaxial graphene, which reveals a universal behavior, independent of the electron acceleration energy. By knowing the stress-strain curve, we finally estimate an effective Young's modulus of PMMA on top of graphene which is a relevant parameter for PMMA based electron-beam lithography and strain engineering applications. △ Less

Submitted 5 July, 2020; originally announced July 2020.

Synthesis of large-area rhombohedral few-layer graphene by chemical vapor deposition on copper

Authors: Chamseddine Bouhafs, Sergio Pezzini, Neeraj Mishra, Vaidotas Mišeikis, Yuran Niu, Claudia Struzzi, Alexei A. Zakharov, Stiven Forti, Camilla Coletti

Abstract: Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size.… ▽ More Rhombohedral-stacked few-layer graphene (FLG) has been receiving an ever-increasing attention owing to its peculiar electronic properties that could lead to enticing phenomena such as superconductivity and magnetic ordering. Up to now, experimental studies on such material have been mainly limited by the difficulty in isolating it in thickness exceeding 3 atomic layers with device-compatible size. In this work, rhombohedral graphene with thickness up to 9 layers and areas up to ~50 micrometers square is grown via chemical vapor deposition (CVD) on suspended Cu foils and transferred onto target substrates via etch-free delamination. The domains of rhombohedral FLG are identified by Raman spectroscopy and are found to alternate with domains of Bernal-stacked FLG within the same crystal in a stripe-like configuration. A combined analysis of micro-Raman map**, atomic force microscopy and optical microscopy indicates that the formation of rhombohedral-stacked FLG is strongly correlated to the copper substrate morphology. Cu step bunching results in bending of FLG and interlayer displacement along preferential crystallographic orientations, as determined experimentally by electron microscopy, thus inducing the stripe-like domains. The growth and transfer of rhombohedral FLG with the reported thickness and size shall facilitate the observation of predicted unconventional physics and ultimately add to its technological relevance. △ Less

Submitted 11 June, 2020; originally announced June 2020.

Comments: 27 pages, 4 Figures, 9 Supplementary Figures

Journal ref: Carbon 177 (2021) 282-290

Graphene Plasmonic Fractal Metamaterials for Broadband Photodetectors

Authors: Francesco De Nicola, Nikhil Santh Puthiya Purayil, Vaidotas Miŝeikis, Davide Spirito, Andrea Tomadin, Camilla Coletti, Marco Polini, Roman Krahne, Vittorio Pellegrini

Abstract: Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room temperature in a novel metadevice based on gold/graphene Sierpinski carpet plasmonic fractals. We observed an unprecedented internal quantum efficiency up to 100%… ▽ More Metamaterials have recently established a new paradigm for enhanced light absorption in state-of-the-art photodetectors. Here, we demonstrate broadband, highly efficient, polarization-insensitive, and gate-tunable photodetection at room temperature in a novel metadevice based on gold/graphene Sierpinski carpet plasmonic fractals. We observed an unprecedented internal quantum efficiency up to 100% from the near-infrared to the visible range with an upper bound of optical detectivity of $10^{11}$ Jones and a gain up to $10^{6}$, which is a fingerprint of multiple hot carriers photogenerated in graphene. Also, we show a 100-fold enhanced photodetection due to highly focused (up to a record factor of $|E/E_{0}|\approx20$ for graphene) electromagnetic fields induced by electrically tunable multimodal plasmons, spatially localized in self-similar fashion on the metasurface. Our findings give direct insight into the physical processes governing graphene plasmonic fractal metamaterials. The proposed structure represents a promising route for the realization of a broadband, compact, and active platform for future optoelectronic devices including multiband bio/chemical and light sensors. △ Less

Submitted 13 May, 2020; originally announced May 2020.

Comments: 10 pages, 6 figures

Journal ref: Sci. Rep. 10 (2020) 1-10

High-quality electrical transport using scalable CVD graphene

Authors: Sergio Pezzini, Vaidotas Mišeikis, Simona Pace, Francesco Rossella, Kenji Watanabe, Takashi Taniguchi, Camilla Coletti

Abstract: Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliate… ▽ More Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals $-$ without taking part to their detachment from the growth catalyst $-$ and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to $\sim1.3 \times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$ concentration. At cryogenic temperatures, the mobility ($ > 6\times10^5$ cm$^2$V$^{-1}$s$^{-1}$ at $\sim10^{11}$ cm$^{-2}$) is limited by the devices' physical edges, and charge fluctuations $ < 7\times10^9$ cm$^{-2}$ are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization ($B\sim50$ mT) and signatures of electronic correlation, including the fractional quantum Hall effect. △ Less

Submitted 21 August, 2020; v1 submitted 5 May, 2020; originally announced May 2020.

Comments: This is the unedited authors' version of the submitted article; 24 pages, 4 figures and supplementary information

Journal ref: 2D Mater. 7, 041003 (2020)

30$^\circ$-twisted bilayer graphene quasicrystals from chemical vapor deposition

Authors: Sergio Pezzini, Vaidotas Miseikis, Giulia Piccinini, Stiven Forti, Simona Pace, Rebecca Engelke, Francesco Rossella, Kenji Watanabe, Takashi Taniguchi, Philip Kim, Camilla Coletti

Abstract: The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show t… ▽ More The artificial stacking of atomically thin crystals suffers from intrinsic limitations in terms of control and reproducibility of the relative orientation of exfoliated flakes. This drawback is particularly severe when the properties of the system critically depend on the twist angle, as in the case of the dodecagonal quasicrystal formed by two graphene layers rotated by 30$^\circ$. Here we show that large-area 30$^\circ$-rotated bilayer graphene can be grown deterministically by chemical vapor deposition on Cu, eliminating the need of artificial assembly. The quasicrystals are easily transferred to arbitrary substrates and integrated in high-quality hBN-encapsulated heterostructures, which we process into dual-gated devices exhibiting carrier mobility up to $10^5$ cm$^2$/Vs. From low-temperature magnetotransport, we find that the graphene quasicrystals effectively behave as uncoupled graphene layers, showing 8-fold degenerate quantum Hall states: this result indicates that the Dirac cones replica detected by previous photo-emission experiments do not contribute to the electrical transport. △ Less

Submitted 24 April, 2020; v1 submitted 28 January, 2020; originally announced January 2020.

Comments: This is the unedited authors' version of the submitted article, published in its final form on Nano Letters 2020 https://doi.org/10.1021/acs.nanolett.0c00172 , 21 pages, 3 figures and supporting information

Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene

Authors: Stiven Forti, Stefan Link, Alexander Stöhr, Yuran Niu, Alexei A. Zakharov, Camilla Coletti, Ulrich Starke

Abstract: The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer,… ▽ More The synthesis of transition metals in a two-dimensional (2D) fashion has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer (ML) graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a novel class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the {ΓK} direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which was never observed before and hosts great interest for fundamental physics. △ Less

Submitted 4 December, 2019; originally announced December 2019.

Journal ref: Nat Commun 11, 2236 (2020)

Low-voltage 2D materials-based printed field-effect transistors for integrated digital and analog electronics on paper

Authors: Silvia Conti, Lorenzo Pimpolari, Gabriele Calabrese, Robyn Worsley, Subimal Majee, Dmitry K. Polyushkin, Matthias Paur, Simona Pace, Dong Hoon Keum, Filippo Fabbri, Giuseppe Iannaccone, Massimo Macucci, Camilla Coletti, Thomas Mueller, Cinzia Casiraghi, Gianluca Fiori

Abstract: Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, c… ▽ More Paper is the ideal substrate for the development of flexible and environmentally sustainable ubiquitous electronic systems, which, combined with two-dimensional materials, could be exploited in many Internet-of-Things applications, ranging from wearable electronics to smart packaging. Here we report high-performance MoS2 field-effect transistors on paper fabricated with a channel-array approach, combining the advantages of two large-area techniques: chemical vapor deposition and inkjet-printing.The first allows the pre-deposition of a pattern of MoS2; the second, the printing of dielectric layers, contacts, and connections to complete transistors and circuits fabrication. Average ION/IOFF of 8 x 10^3 (up to 5 x 10^4) and mobility of 5.5 cm2 V-1 s-1 (up to 26 cm2 V-1 s-1) are obtained. Fully functional integrated circuits of digital and analog building blocks, such as logic gates and current mirrors, are demonstrated, highlighting the potential of this approach for ubiquitous electronics on paper. △ Less

Submitted 14 October, 2020; v1 submitted 14 November, 2019; originally announced November 2019.

Deterministic direct growth of WS2 on CVD graphene arrays

Authors: Giulia Piccinini, Stiven Forti, Leonardo Martini, Sergio Pezzini, Vaidotas Miseikis, Ulrich Starke, Filippo Fabbri, Camilla Coletti

Abstract: The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In th… ▽ More The combination of the exciting properties of graphene with those of monolayer tungsten disulfide (WS2) makes this heterostack of great interest for electronic, optoelectronic and spintronic applications. The scalable synthesis of graphene/WS2 heterostructures on technologically attractive substrates like SiO2 would greatly facilitate the implementation of novel two-dimensional (2D) devices. In this work, we report the direct growth of monolayer WS2 via chemical vapor deposition (CVD) on single-crystal graphene arrays on SiO2. Remarkably, spectroscopic and microscopic characterization reveals that WS2 grows only on top of the graphene crystals so that the vertical heterostack is selectively obtained in a bottom-up fashion. Spectroscopic characterization indicates that, after WS2 synthesis, graphene undergoes compressive strain and hole do**. Tailored experiments show that such hole do** is caused by the modification of the SiO2 stoichiometry at the graphene/SiO2 interface during the WS2 growth. Electrical transport measurements reveal that the heterostructure behaves like an electron-blocking layer at large positive gate voltage, which makes it a suitable candidate for the development of unipolar optoelectronic components. △ Less

Submitted 5 November, 2019; v1 submitted 4 November, 2019; originally announced November 2019.

Comments: 30 pages, main text and supplementary information

Journal ref: 2D Mater. 7 014002 (2020)

CVD-graphene/graphene flakes dual-films as advanced DSSC counter electrodes

Authors: Andrea Capasso, Sebastiano Bellani, Alessandro Lorenzo Palma, Leyla Najafi1, Antonio Esaù Del Rio Castillo, Nicola Curreli1, Lucio Cinà, Vaidotas Miseikis, Camilla Coletti, Giuseppe Calogero, Vittorio Pellegrini, Aldo Di Carlo, Francesco Bonaccorso

Abstract: The use of graphene-based electrodes is burgeoning in a wide range of applications, including solar cells, light emitting diodes, touch screens, field-effect transistors, photodetectors, sensors and energy storage systems. The success of such electrodes strongly depends on the implementation of effective production and processing methods for graphene. In this work, we take advantage of two differe… ▽ More The use of graphene-based electrodes is burgeoning in a wide range of applications, including solar cells, light emitting diodes, touch screens, field-effect transistors, photodetectors, sensors and energy storage systems. The success of such electrodes strongly depends on the implementation of effective production and processing methods for graphene. In this work, we take advantage of two different graphene production methods to design an advanced, conductive oxide- and platinum-free, graphene-based counter electrode for dye-sensitized solar cells (DSSCs). In particular, we exploit the combination of a graphene film, produced by chemical vapor deposition (CVD) (CVD-graphene), with few-layer graphene (FLG) flakes, produced by liquid phase exfoliation. The CVD-graphene is used as charge collector, while the FLG flakes, deposited atop by spray coating, act as catalyst for the reduction of the electrolyte redox couple (i.e., I3-/I-- and Co+2/+3). The as-produced counter electrodes are tested in both I3-/I-- and Co+2/+3-based semitransparent DSSCs, showing power conversion efficiencies of 2.1% and 5.09%, respectively, under 1 SUN illumination. At 0.1 SUN, Co+2/+3-based DSSCs achieve a power conversion efficiency as high as 6.87%. Our results demonstrate that the electrical, optical, chemical and catalytic properties of graphene-based dual films, designed by combining CVD-graphene and FLG flakes, are effective alternatives to FTO/Pt counter electrodes for DSSCs for both outdoor and indoor applications. △ Less

Submitted 31 October, 2019; originally announced October 2019.

Journal ref: 2D Materials, 2019, 6 035007

Going beyond copper: wafer-scale synthesis of graphene on sapphire

Authors: N. Mishra, S. Forti, F. Fabbri, L. Martini, C. McAleese, B. Conran, P. R. Whelan, A. Shivayogimath, L. Buß, J. Falta, I. Aliaj, S. Roddaro, J. I. Flege, P. Bøggild, K. B. K. Teo, C. Coletti

Abstract: The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-cataly… ▽ More The adoption of graphene in electronics, optoelectronics and photonics is hindered by the difficulty in obtaining high quality material on technologically-relevant substrates, over wafer-scale sizes and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, we demonstrate a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapour deposition (CVD). We identify via low energy electron diffraction (LEED), low energy electron microscopy (LEEM) and scanning tunneling microscopy (STM) measurements the Al-rich reconstruction root31R9 of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm2/Vs. We scale up the process to 4-inch and 6-inch wafer sizes and demonstrate that metal contamination levels are within the limits for back-end-of-line (BEOL) integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis. △ Less

Submitted 2 July, 2019; originally announced July 2019.

Comments: 15 main text pages, 4 main text figures, 13 supplementary information pages, 12 supplementary figures, 3 supplementary tables

Journal ref: Small, Volume15, Issue50 December 13, 2019 1904906

Driving with temperature the synthesis of graphene films on Ge(110)

Authors: L. Persichetti, M. De Seta, A. M. Scaparro, V. Miseikis, A. Notargiacomo, A. Ruocco, A. Sgarlata, M. Fanfoni, F. Fabbri, C. Coletti, L. Di Gaspare

Abstract: We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the quality of graphene films depends critically on the growth temperature improving significantly by increasing this temperature in the 910-930 °C range. We correlat… ▽ More We systematically investigate the chemical vapor deposition growth of graphene on Ge(110) as a function of the deposition temperature close to the Ge melting point. By merging spectroscopic and morphological information, we find that the quality of graphene films depends critically on the growth temperature improving significantly by increasing this temperature in the 910-930 °C range. We correlate the abrupt improvement of the graphene quality to the formation of a quasi-liquid Ge surface occurring in the same temperature range, which determines increased atom diffusivity and sublimation rate. Being observed for diverse Ge orientations, this process is of general relevance for graphene synthesis on Ge. △ Less

Submitted 14 September, 2019; v1 submitted 4 June, 2019; originally announced June 2019.

Journal ref: Applied Surface Science 499, 143923 (2019)

Waveguide-integrated, plasmonic enhanced graphene photodetectors

Authors: J. E. Muench, A. Ruocco, M. A. Giambra, V. Miseikis, D. Zhang, J. Wang, H. F. Y. Watson, G. C. Park, S. Akhavan, V. Sorianello, M. Midrio, A. Tomadin, C. Coletti, M. Romagnoli, A. C. Ferrari, I. Goykhman

Abstract: We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneou… ▽ More We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules △ Less

Submitted 11 May, 2019; originally announced May 2019.

Journal ref: Nano Lett 19, 7632 (2019)

A sensitive calorimetric technique to study energy (heat) exchange at the nano-scale

Authors: Luca Basta, Stefano Veronesi, Yuya Murata, Zoe Dubois, Neeraj Mishra, Filippo Fabbri, Camilla Coletti, Stefan Heun

Abstract: Every time a chemical reaction occurs, an energy exchange between reactants and environment exists, which is defined as the enthalpy of the reaction. In the last decades, research has resulted in an increasing number of devices at the micro- or nano-scale. Sensors, catalyzers, and energy storage systems are more and more developed as nano-devices which represent the building blocks for commercial… ▽ More Every time a chemical reaction occurs, an energy exchange between reactants and environment exists, which is defined as the enthalpy of the reaction. In the last decades, research has resulted in an increasing number of devices at the micro- or nano-scale. Sensors, catalyzers, and energy storage systems are more and more developed as nano-devices which represent the building blocks for commercial "macroscopic" objects. A general method for the direct evaluation of the energy balance of such systems is not available at present. Calorimetry is a powerful tool to investigate energy exchange, but it usually needs macroscopic sample quantities. Here we report on the development of an original experimental setup able to detect temperature variations as low as 10 mK in a sample of 10 ng using a thermometer device having physical dimensions of 5x5 mm2. The technique has been utilized to measure the enthalpy release during the adsorption process of H2 on a titanium decorated monolayer graphene. The sensitivity of these thermometers is high enough to detect a hydrogen uptake of 10^(-10) moles, corresponding to 0.2 ng, with an enthalpy release of about 23 uJ. The experimental setup allows, in perspective, the scalability to even smaller sizes. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Journal ref: Nanoscale, 2018, 10, 10079

Direct evidence for efficient ultrafast charge separation in epitaxial WS$_2$/graphene heterostructure

Authors: S. Aeschlimann, A. Rossi, M. Chávez-Cervantes, R. Krause, B. Arnoldi, B. Stadtmüller, M. Aeschlimann, S. Forti, F. Fabbri, C. Coletti, I. Gierz

Abstract: We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobil… ▽ More We use time- and angle-resolved photoemission spectroscopy (tr-ARPES) to investigate ultrafast charge transfer in an epitaxial heterostructure made of monolayer WS$_2$ and graphene. This heterostructure combines the benefits of a direct gap semiconductor with strong spin-orbit coupling and strong light-matter interaction with those of a semimetal hosting massless carriers with extremely high mobility and long spin lifetimes. We find that, after photoexcitation at resonance to the A-exciton in WS$_2$, the photoexcited holes rapidly transfer into the graphene layer while the photoexcited electrons remain in the WS$_2$ layer. The resulting charge transfer state is found to have a lifetime of $\sim1$\,ps. We attribute our findings to differences in scattering phase space caused by the relative alignment of WS$_2$ and graphene bands as revealed by high resolution ARPES. In combination with spin-selective excitation using circularly polarized light the investigated WS$_2$/graphene heterostructure might provide a new platform for efficient optical spin injection into graphene. △ Less

Submitted 2 April, 2019; originally announced April 2019.

Comments: 28 pages, 14 figures

Local tuning of WS2 photoluminescence using polymeric micro-actuators in a monolithic van der Waals heterostructure

Authors: Francesco Colangelo, Andrea Morandi, Stiven Forti, Filippo Fabbri, Camilla Coletti, Flavia Viola Di Girolamo, Alberto Di Lieto, Mauro Tonelli, Alessandro Tredicucci, Alessandro Pitanti, Stefano Roddaro

Abstract: The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuat… ▽ More The control of the local strain profile in 2D materials offers an invaluable tool for tailoring the electronic and photonic properties of solid-state devices. In this paper, we demonstrate a local engineering of the exciton photoluminescence (PL) energy of monolayer tungsten disulfide (WS2) by means of strain. We apply a local uniaxial stress to WS2 by exploiting electron-beam patterned and actuated polymeric micrometric artificial muscles (MAMs), which we implement onto monolithic synthetic WS2/graphene heterostructures. We show that MAMs are able to induce an in-plane stress to the top WS2 layer of the van der Waals heterostructure and that the latter can slide on the graphene underneath with negligible friction. As a proof of concept for the local strain-induced PL shift experiments, we exploit a two-MAM configuration in order to apply uniaxial tensile stress on well-defined micrometric regions of WS2. Remarkably, our architecture does not require the adoption of fragile suspended microstructures. We observe a spatial modulation of the excitonic PL energy of the WS2 monolayers under stress, which agrees with the expected strain profile and attains a maximum redshift of about 40 meV at the maximum strain intensity point. After the actuation, a time-dependent PL blueshift is observed in agreement with the viscoelastic properties of the polymeric MAMs. Our approach enables inducing local and arbitrary deformation profiles and circumvents some key limitations and technical challenges of alternative strain engineering methods requiring the 2D material transfer and production of suspended membranes. △ Less

Submitted 6 November, 2019; v1 submitted 15 March, 2019; originally announced March 2019.

Comments: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in APL and may be found at https://aip.scitation.org/doi/10.1063/1.5122262

Journal ref: Appl. Phys. Lett. 115, 183101 (2019); https://aip.scitation.org/doi/10.1063/1.5122262

Superlubricity of epitaxial monolayer WS2 on graphene

Authors: Holger Buech, Antonio Rossi, Stiven Forti, Domenica Convertino, Valentina Tozzini, Camilla Coletti

Abstract: We report on the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) on silicon carbide (SiC). WS2 single-crystalline flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG and microscopic and diffraction analyses indicate that the WS2/EG stack is predominantly aligned with zero azimuthal rotation. Our experimental… ▽ More We report on the superlubric sliding of monolayer tungsten disulfide (WS2) on epitaxial graphene (EG) on silicon carbide (SiC). WS2 single-crystalline flakes with lateral size of hundreds of nanometers are obtained via chemical vapor deposition (CVD) on EG and microscopic and diffraction analyses indicate that the WS2/EG stack is predominantly aligned with zero azimuthal rotation. Our experimental findings show that the WS2 flakes are prone to slide over graphene surfaces at room temperature when perturbed by a scanning probe microscopy (SPM) tip. Atomistic force field based molecular dynamics simulations indicate that through local physical deformation of the WS2 flake, the scanning tip releases enough energy to the flake to overcome the motion activation barrier and to trigger an ultra-low friction roto-translational displacement, that is superlubric. Experimental observations indicate that after the sliding, the WS2 flakes rest with a rotation of npi/3 with respect to graphene. Atomically resolved investigations show that the interface is atomically sharp and that the WS2 lattice is strain-free. These results help to shed light on nanotribological phenomena in van der Waals (vdW) heterostacks and suggest that the applicative potential of the WS2/graphene heterostructure can be extended by novel mechanical prospects. △ Less

Submitted 13 March, 2019; originally announced March 2019.

Comments: 27 pages, main text and supplementary information

Journal ref: Buech, H., Rossi, A., Forti, S. et al. Nano Res. (2018) 11: 5946. https://doi.org/10.1007/s12274-018-2108-7

Structure-dependent electrical properties of graphene nanoribbon devices with graphene electrodes

Authors: Leonardo Martini, Zong** Chen, Neeraj Mishra, Gabriela Borin Barin, Paolo Fantuzzi, Pascal Ruffieux, Roman Fasel, Xinliang Feng, Akimitsu Narita, Camilla Coletti, Klaus Müllen, Andrea Candini

Abstract: Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consi… ▽ More Graphene nanoribbons (GNRs) are a novel and intriguing class of materials in the field of nanoelectronics, since their properties, solely defined by their width and edge type, are controllable with high precision directly from synthesis. Here we study the correlation between the GNR structure and the corresponding device electrical properties. We investigated a series of field effect devices consisting of a film of armchair GNRs with different structures (namely width and/or length) as the transistor channel, contacted with narrowly spaced graphene sheets as the source-drain electrodes. By analyzing several tens of junctions for each individual GNR type, we observe that the values of the output current display a width-dependent behavior, indicating electronic bandgaps in good agreement with the predicted theoretical values. These results provide insights into the link between the ribbon structure and the device properties, which are fundamental for the development of GNR-based electronics. △ Less

Submitted 8 February, 2019; originally announced February 2019.

Comments: Published in Carbon (2019)

Journal ref: Carbon 146, May 2019, pages 36-43

Abrupt changes in the graphene on Ge(001) system at the onset of surface melting

Authors: L. Persichetti, L. Di Gaspare, F. Fabbri, A. M. Scaparro, A. Notargiacomo, A. Sgarlata, M. Fanfoni, V. Miseikis, C. Coletti, M. De Seta

Abstract: By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 degrees. We attribute this discontinuity to the i… ▽ More By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting an abrupt change of the graphene's quality, morphology, electronic properties and growth mode at 930 degrees. We attribute this discontinuity to the incomplete surface melting of the Ge substrate and show how incomplete melting explains a variety of diverse and long-debated peculiar features of the graphene/Ge(001), including the characteristic nanostructuring of the Ge substrate induced by graphene overgrowth. We find that the quasi-liquid Ge layer formed close to 930 degrees is fundamental to obtain high-quality graphene, while a temperature decrease of 10 degrees already results in a wrinkled and defective graphene film. △ Less

Submitted 18 January, 2019; originally announced January 2019.

Comments: in press

Journal ref: Carbon 145, 345 (2019)

Ripple morphology of graphitic surfaces: a comparison between few-layer graphene and HOPG

Authors: N. Haghighian, D. Convertino, V. Miseikis, F Bisio, A. Morgante, C. Coletti, M. Canepa, O. Cavalleri

Abstract: The surface structure of Few-Layer Graphene (FLG) epitaxially grown on the C-face of SiC has been investigated by TM-AFM in ambient air and upon interaction with diluted aqueous solutions of bio-organic molecules (dimethyl sulfoxide, DMSO, and L-Methionine). On pristine FLG we observe nicely ordered, three-fold oriented rippled domains, with a 4.7+/-0.2 nm periodicity (small periodicity, SP) and a… ▽ More The surface structure of Few-Layer Graphene (FLG) epitaxially grown on the C-face of SiC has been investigated by TM-AFM in ambient air and upon interaction with diluted aqueous solutions of bio-organic molecules (dimethyl sulfoxide, DMSO, and L-Methionine). On pristine FLG we observe nicely ordered, three-fold oriented rippled domains, with a 4.7+/-0.2 nm periodicity (small periodicity, SP) and a peak-to-valley distance in the range 0.1-0.2 nm. Upon mild interaction of the FLG surface with the molecular solution, the ripple periodicity relaxes to 6.2+/-0.2 nm (large periodicity, LP), while the peak-to-valley height increases to 0.2-0.3 nm. When additional energy is transferred to the system through sonication in solution, graphene planes are peeled off from FLG, as shown by quantitative analysis of XPS and Raman spectroscopy data which indicate a neat reduction of thickness. Upon sonication rippled domains are no longer observed. Regarding HOPG, we could not observe ripples on cleaved samples in ambient air, while LP ripples develop upon interaction with the molecular solutions. Recent literature on similar systems is not univocal regarding the interpretation of rippling. The complex of our comparative observations on FLG and HOPG can be hardly rationalized solely on the base of surface assembly of molecules, either organic molecules coming from the solution or adventitious species. We propose to consider the ripples as the manifestation of the free-energy minimization of quasi-2D layers, eventually affected by factors such as the interplane stacking, the interaction with molecules and/or with the AFM tip. △ Less

Submitted 31 October, 2018; originally announced October 2018.

Journal ref: N. Haghighian et al., Phys. Chem. Chem. Phys., 2018,20, 13322-13330

Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes

Authors: F. Chianese, A. Candini, M. Affronte, N. Mishra, C. Coletti, A. Cassinese

Abstract: In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond lin… ▽ More In this work we test graphene electrodes in nano-metric channel n-type Organic Field EffectTransistors (OFETs) based on thermally evaporated thin films of perylene-3,4,9,10-tetracarboxylic acid diimide derivative (PDIF-CN2). By a thorough comparison with short channel transistors made with reference gold electrodes, we found that the output characteristics of the graphene-based devices respond linearly to the applied biases, in contrast with the supra-linear trend of gold-based transistors. Moreover, short channel effects are considerably suppressed in graphene electrodes devices. More specifically, current on/off ratios independent of the channel length (L) and enhanced response for high longitudinal biases are demonstrated for L down to ~140 nm. These results are rationalized taking into account the morphological and electronic characteristics of graphene, showing that the use of graphene electrodes may help to overcome the problem of Space Charge Limited Current (SCLC) in short channel OFETs. △ Less

Submitted 30 October, 2018; originally announced October 2018.

Journal ref: F. Chianese et al., Appl. Phys. Lett. 112, 213301 (2018)

STM Study of Exfoliated Few Layer Black Phosphorus Annealed in Ultrahigh Vacuum

Authors: Abhishek Kumar, F. Telesio, S. Forti, A. Al-Temimy, C. Coletti, M. Serrano-Ruiz, M. Caporali, M. Peruzzini, F. Beltram, S. Heun

Abstract: Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crys… ▽ More Black Phosphorus (bP) has emerged as an interesting addition to the category of two-dimensional materials. Surface-science studies on this material are of great interest, but they are hampered by bP's high reactivity to oxygen and water, a major challenge to scanning tunneling microscopy (STM) experiments. As a consequence, the large majority of these studies were performed by cleaving a bulk crystal in situ. Here we present a study of surface modifications on exfoliated bP flakes upon consecutive annealing steps, up to 550 C, well above the sublimation temperature of bP. In particular, our attention is focused on the temperature range 375 C - 400 C, when sublimation starts, and a controlled desorption from the surface occurs alongside with the formation of characteristic well-aligned craters. There is an open debate in the literature about the crystallographic orientation of these craters, whether they align along the zigzag or the armchair direction. Thanks to the atomic resolution provided by STM, we are able to identify the orientation of the craters with respect to the bP crystal: the long axis of the craters is aligned along the zigzag direction of bP. This allows us to solve the controversy, and, moreover, to provide insight in the underlying desorption mechanism leading to crater formation. △ Less

Submitted 28 August, 2018; originally announced August 2018.

Journal ref: 2D Mater. 6 (2019) 015005

Early stage of CVD graphene synthesis on Ge(001) substrate

Authors: L. Di Gaspare, A. M. Scaparro, M. Fanfoni, L. Fazi, A. Sgarlata, A. Notargiacomo, V. Miseikis, C. Coletti, M. De Seta

Abstract: In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able to individuate a carbon precursor phase to graphene nucleation which coexists with small graphene domains. This precursor phase is made of C aggregates… ▽ More In this work we shed light on the early stage of the chemical vapor deposition of graphene on Ge(001) surfaces. By a combined use of microRaman and x-ray photoelectron spectroscopies, and scanning tunneling microscopy and spectroscopy, we were able to individuate a carbon precursor phase to graphene nucleation which coexists with small graphene domains. This precursor phase is made of C aggregates with different size, shape and local ordering which are not fully sp2 hybridized. In some atomic size regions these aggregates show a linear arrangement of atoms as well as the first signature of the hexagonal structure of graphene. The carbon precursor phase evolves in graphene domains through an ordering process, associated to a re-arrangement of the Ge surface morphology. This surface structuring represents the embryo stage of the hills-and-valleys faceting featured by the Ge(001) surface for longer deposition times, when the graphene domains coalesce to form a single layer graphene film. △ Less

Submitted 3 May, 2018; originally announced May 2018.

Journal ref: Carbon, Volume 134, August 2018, Pages 183-188

Investigating the CVD synthesis of graphene on Ge(100): towards layer by layer growth

Authors: A. M. Scaparro, V. Miseikis, C. Coletti, A. Notargiacomo, M. Pea, M. De Seta, L. Di Gaspare

Abstract: Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graph… ▽ More Germanium is emerging as the substrate of choice for the growth of graphene in CMOS-compatible processes. For future application in next generation devices the accurate control over the properties of high-quality graphene synthesized on Ge surfaces, such as number of layers and domain size, is of paramount importance. Here we investigate the role of the process gas flows on the CVD growth of graphene on Ge(100). The quality and morphology of the deposited material is assessed by using microRaman spectroscopy, x-ray photoemission spectroscopy, scanning electron and atomic force microscopies. We find that by simply varying the carbon precursor flow different growth regimes - yielding to graphene nanoribbons, graphene monolayer and graphene multilayer - are established. We identify the growth conditions yielding to a layer-by-layer growth regime and report on the achievement of homogeneous monolayer graphene with an average intensity ratio of 2D and G bands in the Raman map larger than 3. △ Less

Submitted 3 May, 2018; originally announced May 2018.

Journal ref: ACS Appl. Mat. Interfaces 8, 48, pp 33083-33090 (2016)

Fast detection of water nanopockets underneath wet-transferred graphene

Authors: Michele Magnozzi, Niloofar Haghighian, Vaidotas Miseikis, Ornella Cavalleri, Camilla Coletti, Francesco Bisio, Maurizio Canepa

Abstract: We report an investigation of the graphene/substrate interface morphology in large-area polycrystalline graphene grown by chemical-vapour deposition and wet-transferred onto Si wafers. We combined spectroscopic ellipsometry, X-ray photoelectron spectroscopy and atomic-force microscopy in order to yield morphological and chemical information about the system. The data showed that wet-transferred sa… ▽ More We report an investigation of the graphene/substrate interface morphology in large-area polycrystalline graphene grown by chemical-vapour deposition and wet-transferred onto Si wafers. We combined spectroscopic ellipsometry, X-ray photoelectron spectroscopy and atomic-force microscopy in order to yield morphological and chemical information about the system. The data showed that wet-transferred samples may randomly exhibit nanosized relief patterns indicative of small water nanopockets trapped between graphene and the underlying substrate. These pockets affect the adhesion of graphene to the substrate, but can be efficiently removed upon a mild annealing in high vacuum. We show that ellipsometry is capable of successfully and reliably detecting, via multilayer dielectric modelling, both the presence of such a spurious intercalation layer and its removal. The fast, broadly applicable and non-invasive character of this technique can therefore promote its application for quickly and reliably assessing the degree of adhesion of graphene transferred onto target substrates, either for ex-post evaluation or in-line process monitoring. △ Less

Submitted 3 May, 2018; originally announced May 2018.

Comments: 11 pages, 4 figures

Journal ref: Carbon, Volume 118, July 2017, Pages 208-214 (2017)

UV Light Detection from CdS Nanocrystal Sensitized Graphene Photodetectors at kHz Frequencies

Authors: Davide Spirito, Stefan Kudera, Vaidotas Miseikis, Carlo Giansante, Camilla Coletti, Roman Krahne

Abstract: We have fabricated UV-sensitive photodetectors based on colloidal CdS nanocrystals and graphene. The nanocrystals act as a sensitizer layer that improves light harvesting leading to high responsivity of the detector. Despite the slow relaxation of the photogenerated charges in the nanocrystal film, faster processes allowed to detect pulses up to a repetition rate of 2 kHz. We have performed time-r… ▽ More We have fabricated UV-sensitive photodetectors based on colloidal CdS nanocrystals and graphene. The nanocrystals act as a sensitizer layer that improves light harvesting leading to high responsivity of the detector. Despite the slow relaxation of the photogenerated charges in the nanocrystal film, faster processes allowed to detect pulses up to a repetition rate of 2 kHz. We have performed time-resolved analysis of the processes occurring in our hybrid system, and discuss possible photo-induced charge transfer mechanisms. △ Less

Submitted 2 May, 2018; originally announced May 2018.

Comments: 11 pages, 5 figures

Journal ref: J. Phys. Chem. C 119, 42, 23859-23864 (2015)

THz detection with epitaxial graphene field effect transistors on silicon carbide

Authors: F. Bianco, D. Perenzoni, D. Convertino, S. L. De Bonis, D. Spirito, M. S. Vitiello, C. Coletti, M. Perenzoni, A. Tredicucci

Abstract: We report on room temperature THz detection by means of antenna-coupled field effect transistors fabricated by using epitaxial graphene grown on silicon carbide substrate. Two independent detection mechanisms are found: plasma wave assisted-detection and thermoelectric effect, which is ascribed to the presence of junctions along the FET channel. The superposition of the calculated functional depen… ▽ More We report on room temperature THz detection by means of antenna-coupled field effect transistors fabricated by using epitaxial graphene grown on silicon carbide substrate. Two independent detection mechanisms are found: plasma wave assisted-detection and thermoelectric effect, which is ascribed to the presence of junctions along the FET channel. The superposition of the calculated functional dependence of both the plasmonic and thermoelectric photovoltages on the gate bias qualitatively well reproduces the measured photovoltages. Additionally, the sign reversal of the measured photovoltage demonstrates the stronger contribution of the plasmonic detection compared to the thermoelectric mechanism. Although responsivity improvement is necessary, these results demonstrate that plasmonic detectors fabricated by epitaxial graphene on silicon carbide are potential candidates for fast large area imaging of macroscopic samples. △ Less

Submitted 2 May, 2018; originally announced May 2018.

Journal ref: Appl. Phys. Lett. 107, 131104 (2015)