Showing 1–50 of 70 results for author: Cobden, D

Plasmonic polarization sensing of electrostatic superlattice potentials

Authors: Shuai Zhang, Jordan Fonseca, Daniel Bennett, Zhiyuan Sun, Junhe Zhang, Ran **g, Suheng Xu, Leo He, S. L. Moore, S. E. Rossi, Dmitry Ovchinnikov, David Cobden, Pablo. Jarillo-Herrero, M. M. Fogler, Philip Kim, Efthimios Kaxiras, Xiaodong Xu, D. N. Basov

Abstract: Plasmon polaritons are formed by coupling light with delocalized electrons. The half-light and half-matter nature of plasmon polaritons endows them with unparalleled tunability via a range of parameters, such as dielectric environments and carrier density. Therefore, plasmon polaritons are expected to be tuned when in proximity to polar materials since the carrier density is tuned by an electrosta… ▽ More Plasmon polaritons are formed by coupling light with delocalized electrons. The half-light and half-matter nature of plasmon polaritons endows them with unparalleled tunability via a range of parameters, such as dielectric environments and carrier density. Therefore, plasmon polaritons are expected to be tuned when in proximity to polar materials since the carrier density is tuned by an electrostatic potential; conversely, the plasmon polariton response might enable the sensing of polarization. Here, we use infrared nano-imaging and nano-photocurrent measurements to investigate heterostructures composed of graphene and twisted hexagonal boron nitride (t-BN), with alternating polarization in a triangular network of moiré stacking domains. We observe that the carrier density and the corresponding plasmonic response of graphene are modulated by polar domains in t-BN. In addition, we demonstrate that the nanometer-wide domain walls of graphene moirés superlattices, created by the polar domains of t-BN, provide momenta to assist the plasmonic excitations. Furthermore, our studies establish that the plasmon of graphene could function as a delicate sensor for polarization textures. The evolution of polarization textures in t-BN under uniform electric fields is tomographically examined via plasmonic imaging. Strikingly, no noticeable polarization switching is observed under applied electric fields up to 0.23 V/nm, at variance with transport reports. Our nano-images unambiguously reveal that t-BN with triangular domains acts like a ferrielectric, rather than ferroelectric claimed by many previous studies. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Comments: 41 pages, 20 figures

2024 roadmap on 2D topological insulators

Authors: Bent Weber, Michael S Fuhrer, Xian-Lei Sheng, Shengyuan A Yang, Ronny Thomale, Saquib Shamim, Laurens W Molenkamp, David Cobden, Dmytro Pesin, Harold J W Zandvliet, Pantelis Bampoulis, Ralph Claessen, Fabian R Menges, Johannes Gooth, Claudia Felser, Chandra Shekhar, Anton Tadich, Mengting Zhao, Mark T Edmonds, Junxiang Jia, Maciej Bieniek, Jukka I Väyrynen, Dimitrie Culcer, Bhaskaran Muralidharan, Muhammad Nadeem

Abstract: 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc… ▽ More 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Xiao-Wei Zhang, Xiaoyu Liu, William Holtzmann, Weijie Li, Chong Wang, Chaowei Hu, Yuzhou Zhao, Takashi Taniguchi, Kenji Watanabe, Jihui Yang, David Cobden, Jiun-Haw Chu, Nicolas Regnault, B. Andrei Bernevig, Liang Fu, Ting Cao, Di Xiao, Xiaodong Xu

Abstract: The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abe… ▽ More The recent observation of the fractional quantum anomalous Hall effect in moiré fractional Chern insulators (FCI) provides opportunities for investigating zero magnetic field anyons. So far, both experimental and theoretical results suggest that filling > 1/3 FCI states in the first Chern band share features with those of the lowest Landau level (LL). To create the possibility of realizing non-Abelian anyons, one route is to engineer higher flat Chern bands that mimic higher LLs. Here, we investigate the interaction, topology, and ferromagnetism of the second moiré miniband in twisted MoTe2 bilayer (tMoTe2). Around filling factor v = -3, i.e., half-filling of the second miniband, we uncover spontaneous ferromagnetism and an incipient Chern insulator state. By measuring the anomalous Hall effect as a function of twist angle, we find that the Chern numbers (C) of the top two moiré flat bands have opposite sign (C = -+1) at twist angles above 3.1° but the same sign (C = -1) around 2.6°. This observation is consistent with the recently predicted twist-angle dependent band topology, resulting from the competition between moiré ferroelectricity and piezoelectricity. As we increase the magnetic field, only the small twist-angle device (2.6°) experiences a topological phase transition with an emergent C = -2 state. This is attributed to a Zeeman field-induced band crossing between opposite valleys, with the determined C = -1 for the top two bands. Our results lay a firm foundation for understanding the higher flat Chern bands, which is essential for the prediction or discovery of non-Abelian FCIs. △ Less

Submitted 13 June, 2024; originally announced June 2024.

Comments: 24 pages, 4 figures

Continuously tunable uniaxial strain control of van der Waals heterostructure devices

Authors: Zhaoyu Liu, Xuetao Ma, John Cenker, Jiaqi Cai, Zaiyao Fei, Paul Malinowski, Joshua Mutch, Yuzhou Zhao, Kyle Hwangbo, Zhong Lin, Arnab Manna, Jihui Yang, David Cobden, Xiaodong Xu, Matthew Yankowitz, Jiun-Haw Chu

Abstract: Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optic… ▽ More Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based \textit{in situ} uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to $-0.15\%$ at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures, and can be easily extended to include additional characterization techniques. △ Less

Submitted 23 May, 2024; v1 submitted 1 April, 2024; originally announced April 2024.

Comments: 9 pages, 6 figures, to appear in Journal of Applied Physics

Journal ref: J. Appl. Phys. 135, 204306 (2024)

Revealing the conduction band and pseudovector potential in 2D moiré semiconductors

Authors: Abigail J. Graham, Heonjoon Park, Paul V. Nguyen, James Nunn, Viktor Kandyba, Mattia Cattelan, Alessio Giampietri, Alexei Barinov, Kenji Watanabe, Takashi Taniguchi, Anton Andreev, Mark Rudner, Xiaodong Xu, Neil R. Wilson, David H. Cobden

Abstract: Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the… ▽ More Stacking monolayer semiconductors results in moiré patterns that host many correlated and topological electronic phenomena, but measurements of the basic electronic structure underpinning these phenomena are scarce. Here, we investigate the properties of the conduction band in moiré heterobilayers using submicron angle-resolved photoemission spectroscopy with electrostatic gating, focusing on the example of WS2/WSe2. We find that at all twist angles the conduction band edge is the K-point valley of the WS2, with a band gap of 1.58 +- 0.03 eV. By resolving the conduction band dispersion, we observe an unexpectedly small effective mass of 0.15 +- 0.02 m_e. In addition, we observe replicas of the conduction band displaced by reciprocal lattice vectors of the moiré superlattice. We present arguments and evidence that the replicas are due to modification of the conduction band states by the moiré potential rather than to final-state diffraction. Interestingly, the replicas display an intensity pattern with reduced, 3-fold symmetry, which we show implicates the pseudo vector potential associated with in-plane strain in moiré band formation. △ Less

Submitted 19 September, 2023; originally announced September 2023.

Comments: Main text: 12 pages, 4 figures. Appended Supporting Information: 10 pages, 11 figures

Extrinsic nonlinear Kerr rotation in topological materials under a magnetic field

Authors: Shuang Wu, Zaiyao Fei, Zeyuan Sun, Yangfan Yi, Wei Xia, Dayu Yan, Yanfeng Guo, Youguo Shi, Jiaqiang Yan, David H. Cobden, Wei-Tao Liu, Xiaodong Xu, Shiwei Wu

Abstract: Topological properties in quantum materials are often governed by symmetry and tuned by crystal structure and external fields, and hence symmetry-sensitive nonlinear optical measurements in a magnetic field are a valuable probe. Here we report nonlinear magneto-optical second harmonic generation (SHG) studies of non-magnetic topological materials including bilayer WTe2, monolayer WSe2 and bulk TaA… ▽ More Topological properties in quantum materials are often governed by symmetry and tuned by crystal structure and external fields, and hence symmetry-sensitive nonlinear optical measurements in a magnetic field are a valuable probe. Here we report nonlinear magneto-optical second harmonic generation (SHG) studies of non-magnetic topological materials including bilayer WTe2, monolayer WSe2 and bulk TaAs. The polarization-resolved patterns of optical SHG under magnetic field show nonlinear Kerr rotation in these time-reversal symmetric materials. For materials with three-fold rotational symmetric lattice structure, the SHG polarization pattern rotates just slightly in a magnetic field, whereas in those with mirror or two-fold rotational symmetry the SHG polarization pattern rotates greatly and distorts. These different magneto-SHG characters can be understood by considering the superposition of the magnetic field-induced time-noninvariant nonlinear optical tensor and the crystal-structure-based time-invariant counterpart. The situation is further clarified by scrutinizing the Faraday rotation, whose subtle interplay with crystal symmetry accounts for the diverse behavior of the extrinsic nonlinear Kerr rotation in different materials. Our work illustrates the application of magneto-SHG techniques to directly probe nontrivial topological properties, and underlines the importance of minimizing extrinsic nonlinear Kerr rotation in polarization-resolved magneto-optical studies. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Comments: 25 pages, 6 figures

Visualizing moiré ferroelectricity via plasmons and nano-photocurrent in graphene/twisted-WSe2 structures

Authors: Shuai Zhang, Yang Liu, Zhiyuan Sun, Xinzhong Chen, Baichang Li, S. L. Moore, Song Liu, Zhiying Wang, S. E. Rossi, Ran **g, Jordan Fonseca, Birui Yang, Yinming Shao, Chun-Ying Huang, Taketo Handa, Lin Xiong, Matthew Fu, Tsai-Chun Pan, Dorri Halbertal, Xinyi Xu, Wenjun Zheng, P. J. Schuck, A. N. Pasupathy, C. R. Dean, Xiaoyang Zhu , et al. (6 additional authors not shown)

Abstract: Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) material heterostructures. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we… ▽ More Ferroelectricity, a spontaneous and reversible electric polarization, is found in certain classes of van der Waals (vdW) material heterostructures. The discovery of ferroelectricity in twisted vdW layers provides new opportunities to engineer spatially dependent electric and optical properties associated with the configuration of moiré superlattice domains and the network of domain walls. Here, we employ near-field infrared nano-imaging and nano-photocurrent measurements to study ferroelectricity in minimally twisted WSe2. The ferroelectric domains are visualized through the imaging of the plasmonic response in a graphene monolayer adjacent to the moiré WSe2 bilayers. Specifically, we find that the ferroelectric polarization in moiré domains is imprinted on the plasmonic response of the graphene. Complementary nano-photocurrent measurements demonstrate that the optoelectronic properties of graphene are also modulated by the proximal ferroelectric domains. Our approach represents an alternative strategy for studying moiré ferroelectricity at native length scales and opens promising prospects for (opto)electronic devices. △ Less

Submitted 12 September, 2023; originally announced September 2023.

Comments: 19 pages, 3 figures

Journal ref: Nature Communications 14, 6200 (2023)

Observation of Fractionally Quantized Anomalous Hall Effect

Authors: Heonjoon Park, Jiaqi Cai, Eric Anderson, Yinong Zhang, Jiayi Zhu, Xiaoyu Liu, Chong Wang, William Holtzmann, Chaowei Hu, Zhaoyu Liu, Takashi Taniguchi, Kenji Watanabe, Jiun-haw Chu, Ting Cao, Liang Fu, Wang Yao, Cui-Zu Chang, David Cobden, Di Xiao, Xiaodong Xu

Abstract: The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anoma… ▽ More The integer quantum anomalous Hall (QAH) effect is a lattice analog of the quantum Hall effect at zero magnetic field. This striking transport phenomenon occurs in electronic systems with topologically nontrivial bands and spontaneous time-reversal symmetry breaking. Discovery of its putative fractional counterpart in the presence of strong electron correlations, i.e., the fractional quantum anomalous Hall (FQAH) effect, would open a new chapter in condensed matter physics. Here, we report the direct observation of both integer and fractional QAH effects in electrical measurements on twisted bilayer MoTe$_2$. At zero magnetic field, near filling factor $ν= -1$ (one hole per moiré unit cell) we see an extended integer QAH plateau in the Hall resistance $R_\text{xy}$ that is quantized to $h/e^2 \pm 0.1 \%$ while the longitudinal resistance $R_\text{xx}$ vanishes. Remarkably, at $ν=-2/3$ and $-3/5$ we see plateau features in $R_\text{xy}$ at $3h/2e^2 \pm 1\%$ and $5h/3e^2 \pm 3\%$, respectively, while $R_\text{xx}$ remains small. All these features shift linearly in an applied magnetic field with slopes matching the corresponding Chern numbers $-1$, $-2/3$, and $-3/5$, precisely as expected for integer and fractional QAH states. In addition, at zero magnetic field, $R_\text{xy}$ is approximately $2h/e^2$ near half filling ($ν= -1/2$) and varies linearly as $ν$ is tuned. This behavior resembles that of the composite Fermi liquid in the half-filled lowest Landau level of a two-dimensional electron gas at high magnetic field. Direct observation of the FQAH and associated effects paves the way for researching charge fractionalization and anyonic statistics at zero magnetic field. △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 15 pages, 4 figures for main text. 8 extended data figures

Journal ref: Nature (2023)

Magnetotransport on quantum spin Hall edge coupled to bulk midgap states

Authors: Youjian Chen, Wen** Zhao, Elliott Runburg, David Cobden, D. A. Pesin

Abstract: We consider magnetotransport on a helical edge of a quantum spin Hall insulator, in the presence of bulk midgap states ``side-coupled" to the edge. In the presence of a magnetic field, the midgap levels are spin-split, and hybridization of these levels with the itinerant edge states leads to backscattering, and the ensuing increase in the resistance. We show that there is a singular cusp-like cont… ▽ More We consider magnetotransport on a helical edge of a quantum spin Hall insulator, in the presence of bulk midgap states ``side-coupled" to the edge. In the presence of a magnetic field, the midgap levels are spin-split, and hybridization of these levels with the itinerant edge states leads to backscattering, and the ensuing increase in the resistance. We show that there is a singular cusp-like contribution to the positive magnetoresistance stemming from resonant midgap states weakly coupled to the edge. The singular behavior persists for both coherent and incoherent edge transport regimes. We use the developed theory to fit the experimental data for the magnetoresistance for monolayer WTe$_2$ at liquid helium temperatures. The results of the fitting suggest that the cusp-like behavior of the resistance in weak magnetic fields observed in experiments on monolayer WTe$_2$ with long edge channels might indeed be explained by hybridization of the helical edge states with spin-split bulk midgap states. In particular, the dependence of the magnetoresistance on the direction of the external magnetic field is well described by the incoherent edge transport theory, at the same time being quite distinct from the one expected for a magnetic-field-induced edge gap. △ Less

Submitted 23 February, 2023; originally announced February 2023.

Comments: 14 pages, 7 figures

Ferroelectricity going 2D

Authors: Chuanshou Wang, Lu You, David Cobden, Junling Wang

Abstract: The discoveries of magnetism and ferroelectricity in 2D van der Waals (vdW) materials have brought important functionalities to the 2D materials family, and may trigger a revolution in next generation nanoelectronics and spintronics. In this perspective article, we briefly review the recent progress in the field of 2D ferroelectrics, focusing on the mechanisms that drive spontaneous polarizations… ▽ More The discoveries of magnetism and ferroelectricity in 2D van der Waals (vdW) materials have brought important functionalities to the 2D materials family, and may trigger a revolution in next generation nanoelectronics and spintronics. In this perspective article, we briefly review the recent progress in the field of 2D ferroelectrics, focusing on the mechanisms that drive spontaneous polarizations in 2D systems, unique properties brought about by the reduced lattice dimensionality, and promising applications of 2D ferroelectrics. At the end, we provide an outlook for challenges that need to be addressed and our view on possible future research directions. △ Less

Submitted 16 June, 2022; originally announced June 2022.

Gate-tunable proximity effects in graphene on layered magnetic insulators

Authors: Chun-Chih Tseng, Tiancheng Song, Qianni Jiang, Zhong Lin, Chong Wang, Jaehyun Suh, Kenji Watanabe, Takashi Taniguchi, Michael A. McGuire, Di Xiao, Jiun-Haw Chu, David H. Cobden, Xiaodong Xu, Matthew Yankowitz

Abstract: The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving… ▽ More The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI$_3$, CrBr$_3$, and CrCl$_3$). Surprisingly, we are unable to detect a magnetic exchange field in the graphene, but instead discover proximity effects featuring unprecedented gate-tunability. The graphene becomes highly hole-doped due to charge transfer from the neighboring magnetic insulator, and further exhibits a variety of atypical transport features. These include highly extended quantum Hall plateaus, abrupt reversals in the Landau level filling sequence, and hysteresis over at least days-long time scales. In the case of CrI$_3$, we are able to completely suppress the charge transfer and all attendant atypical transport effects by gating. The charge transfer can additionally be altered in a first-order phase transition upon switching the magnetic states of the nearest CrI$_3$ layers. Our results provide a roadmap for exploiting the magnetic proximity effect in graphene, and motivate further experiments with other magnetic insulators. △ Less

Submitted 14 June, 2022; originally announced June 2022.

Comments: 24 pages, 22 figures

Evidence for equilibrium excitons and exciton condensation in monolayer WTe2

Authors: Bosong Sun, Wen** Zhao, Tauno Palomaki, Zaiyao Fei, Elliott Runburg, Paul Malinowski, Xiong Huang, John Cenker, Yong-Tao Cui, Jiun-Haw Chu, Xiaodong Xu, S. Samaneh Ataei, Daniele Varsano, Maurizia Palummo, Elisa Molinari, Massimo Rontani, David H. Cobden

Abstract: A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On c… ▽ More A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K the conductivity develops a V-shaped dependence on electrostatic do**, while the chemical potential develops a ~43 meV step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be largely accounted for by positing that some of the electrons and holes are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and do** levels. Below 100 K more strongly insulating behavior is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state appears surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wave function. Monolayer WTe2 therefore presents an exceptional combination of topological properties and strong correlations over a wide temperature range. △ Less

Submitted 26 October, 2021; originally announced October 2021.

Comments: Initial submission. Includes supplementary information. Revised version to appear in Nature Physics

Symmetry-broken Chern insulators in twisted double bilayer graphene

Authors: Minhao He, Jiaqi Cai, Ya-Hui Zhang, Yang Liu, Yuhao Li, Takashi Taniguchi, Kenji Watanabe, David H. Cobden, Matthew Yankowitz, Xiaodong Xu

Abstract: Twisted double bilayer graphene (tDBG) has emerged as an especially rich platform for studying strongly correlated and topological states of matter. The material features moiré bands that can be continuously deformed by both perpendicular displacement field and twist angle. Here, we construct a phase diagram representing of the correlated and topological states as a function of these parameters, b… ▽ More Twisted double bilayer graphene (tDBG) has emerged as an especially rich platform for studying strongly correlated and topological states of matter. The material features moiré bands that can be continuously deformed by both perpendicular displacement field and twist angle. Here, we construct a phase diagram representing of the correlated and topological states as a function of these parameters, based on measurements on over a dozen tDBG devices encompassing the two distinct stacking configurations in which the constituent Bernal bilayer graphene sheets are rotated either slightly away from 0° or 60°. We find a hierarchy of symmetry-broken states that emerge sequentially as the twist angle approaches an apparent optimal value of $θ\approx$ 1.34°. Among them, we discover a sequence of symmetry-broken Chern insulator (SBCI) states that arise only within a narrow range of twist angles ($\approx$ 1.33° to 1.39°). We observe an associated anomalous Hall effect at zero field in all samples supporting SBCI states, indicating spontaneous time-reversal symmetry breaking and possible moiré unit cell enlargement at zero magnetic field. △ Less

Submitted 7 September, 2023; v1 submitted 16 September, 2021; originally announced September 2021.

Comments: 42 pages

Journal ref: Nano Letters (2023)

Electric control of a canted-antiferromagnetic Chern insulator

Authors: Jiaqi Cai, Dmitry Ovchinnikov, Zaiyao Fei, Minhao He, Tiancheng Song, Zhong Lin, Chong Wang, David Cobden, Jiun-Haw Chu, Yong-Tao Cui, Cui-Zu Chang, Di Xiao, Jiaqiang Yan, Xiaodong Xu

Abstract: The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnB… ▽ More The interplay between band topology and magnetism can give rise to exotic states of matter. For example, magnetically doped topological insulators can realize a Chern insulator that exhibits quantized Hall resistance at zero magnetic field. While prior works have focused on ferromagnetic systems, little is known about band topology and its manipulation in antiferromagnets. Here, we report that MnBi$_2$Te$_4$ is a rare platform for realizing a canted-antiferromagnetic (cAFM) Chern insulator with electrical control. We show that the Chern insulator state with Chern number $C = 1$ appears as soon as the AFM to canted-AFM phase transition happens. The Chern insulator state is further confirmed by observing the unusual transition of the $C = 1$ state in the cAFM phase to the $C = 2$ orbital quantum Hall states in the magnetic field induced ferromagnetic phase. Near the cAFM-AFM phase boundary, we show that the Chern number can be toggled on and off by applying an electric field alone. We attribute this switching effect to the electrical field tuning of the exchange gap alignment between the top and bottom surfaces. Our work paves the way for future studies on topological cAFM spintronics and facilitates the development of proof-of-concept Chern insulator devices. △ Less

Submitted 9 July, 2021; originally announced July 2021.

Comments: 13 pages, 4 figures, and 5 supplementary figures. Comments are welcome

Unraveling intrinsic flexoelectricity in twisted double bilayer graphene

Authors: Yuhao Li, Xiao Wang, Deqi Tang, Xi Wang, K. Watanabe, T. Taniguchi, Daniel R. Gamelin, David H. Cobden, Matthew Yankowitz, Xiaodong Xu, Jiangyu Li

Abstract: Moiré superlattices of two-dimensional (2D) materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast ($\sim$$8^{\circ}$) between opposite flexoelectric polariza… ▽ More Moiré superlattices of two-dimensional (2D) materials with a small twist angle are thought to exhibit appreciable flexoelectric effect, though unambiguous confirmation of their flexoelectricity is challenging due to artifacts associated with commonly used piezoresponse force microscopy (PFM). For example, unexpectedly small phase contrast ($\sim$$8^{\circ}$) between opposite flexoelectric polarizations was reported in twisted bilayer graphene (tBG), though theoretically predicted value is $180^{\circ}$. Here we developed a methodology to extract intrinsic moiré flexoelectricity using twisted double bilayer graphene (tDBG) as a model system, probed by lateral PFM. For small twist angle samples, we found that a vectorial decomposition is essential to recover the small intrinsic flexoelectric response at domain walls from a large background signal. The obtained three-fold symmetry of commensurate domains with significant flexoelectric response at domain walls is fully consistent with our theoretical calculations. Incommensurate domains in tDBG with relatively large twist angles can also be observed by this technique. Our work provides a general strategy for unraveling intrinsic flexoelectricity in van der Waals moiré superlattices while providing insights into engineered symmetry breaking in centrosymmetric materials. △ Less

Submitted 27 June, 2021; v1 submitted 6 April, 2021; originally announced April 2021.

Determination of the spin axis in quantum spin Hall insulator monolayer WTe2

Authors: Wen** Zhao, Elliott Runburg, Zaiyao Fei, Joshua Mutch, Paul Malinowski, Bosong Sun, Xiong Huang, Dmytro Pesin, Yong-Tao Cui, Xiaodong Xu, Jiun-Haw Chu, David H. Cobden

Abstract: Evidence for the quantum spin Hall (QSH) effect has been reported in several experimental systems in the form of approximately quantized edge conductance. However, the most fundamental feature of the QSH effect, spin-momentum locking in the edge channels, has never been demonstrated experimentally. Here, we report clear evidence for spin-momentum locking in the edge channels of monolayer WTe2, tho… ▽ More Evidence for the quantum spin Hall (QSH) effect has been reported in several experimental systems in the form of approximately quantized edge conductance. However, the most fundamental feature of the QSH effect, spin-momentum locking in the edge channels, has never been demonstrated experimentally. Here, we report clear evidence for spin-momentum locking in the edge channels of monolayer WTe2, thought to be a two-dimensional topological insulator (2D TI). We observe that the edge conductance is controlled by the component of an applied magnetic field perpendicular to a particular axis, which we identify as the spin axis. The axis is the same for all edges, situated in the mirror plane perpendicular to the tungsten chains at 40$\pm$2° to the layer normal, implying that the spin-orbit coupling is inherited from the bulk band structure. We show that this finding is consistent with theory if the band-edge orbitals are taken to have like parity. We conclude that this parity assignment is correct and that both edge states and bulk bands in monolayer WTe2 share the same simple spin structure. Combined with other known features of the edge states this establishes spin-momentum locking, and therefore that monolayer WTe2 is truly a natural 2D TI. △ Less

Submitted 1 March, 2021; v1 submitted 19 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. X 11, 041034 (2021)

Electrically tunable correlated and topological states in twisted monolayer-bilayer graphene

Authors: Shaowen Chen, Minhao He, Ya-Hui Zhang, Valerie Hsieh, Zaiyao Fei, K. Watanabe, T. Taniguchi, David H. Cobden, Xiaodong Xu, Cory R. Dean, Matthew Yankowitz

Abstract: Twisted van der Waals heterostructures with flat electronic bands have recently emerged as a platform for realizing correlated and topological states with an extraordinary degree of control and tunability. In graphene-based moiré heterostructures, the correlated phase diagram and band topology depend strongly on the number of graphene layers, their relative stacking arrangement, and details of the… ▽ More Twisted van der Waals heterostructures with flat electronic bands have recently emerged as a platform for realizing correlated and topological states with an extraordinary degree of control and tunability. In graphene-based moiré heterostructures, the correlated phase diagram and band topology depend strongly on the number of graphene layers, their relative stacking arrangement, and details of the external environment from the encapsulating crystals. Here, we report that the system of twisted monolayer-bilayer graphene (tMBG) hosts a variety of correlated metallic and insulating states, as well as topological magnetic states. Because of its low symmetry, the phase diagram of tMBG approximates that of twisted bilayer graphene when an applied perpendicular electric field points from the bilayer towards the monolayer graphene, or twisted double bilayer graphene when the field is reversed. In the former case, we observe correlated states which undergo an orbitally driven insulating transition above a critical perpendicular magnetic field. In the latter case, we observe the emergence of electrically tunable ferromagnetism at one-quarter filling of the conduction band, with a large associated anomalous Hall effect. Uniquely, the magnetization direction can be switched purely with electrostatic do** at zero magnetic field. Our results establish tMBG as a highly tunable platform for investigating a wide array of tunable correlated and topological states. △ Less

Submitted 23 April, 2020; originally announced April 2020.

Comments: 21 Pages, 20 Figures

Report number: Nature Physics, 10.1038/s41567-020-01062-6 (2020)

Monolayer Semiconductor Auger Detector

Authors: Colin M. Chow, Hongyi Yu, John R. Schaibley, Pasqual Rivera, Joseph Finney, Jiaqiang Yan, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Wang Yao, David H. Cobden, Xiaodong Xu

Abstract: Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auge… ▽ More Auger recombination in semiconductors is a many-body phenomenon in which recombination of electrons and holes is accompanied by excitation of other charge carriers. Being nonradiative, it is detrimental to light emission. The excess energy of the excited carriers is normally rapidly converted to heat, making Auger processes difficult to probe directly. Here, we employ a technique in which the Auger-excited carriers are detected by their ability to tunnel out of the semiconductor through a thin barrier, generating a current. We employ vertical van der Waals (vdW) heterostructures with monolayer WSe2 as the semiconductor and the wide band gap hexagonal boron nitride (hBN) as the tunnel barrier to preferentially transmit high-energy Auger-excited carriers to a graphite electrode. The unambiguous signatures of Auger processes are a rise in the photocurrent when excitons are created by resonant excitation, and negative differential photoconductance resulting from the shifts of the exciton resonances with voltage. We detect holes Auger-excited by both neutral and charged excitons, and find that the Auger scattering is surprisingly strong under weak excitation. The selective extraction of Auger carriers at low, controlled carrier densities that is enabled by vdW heterostructures illustrates an important addition to the techniques available for probing relaxation processes in 2D materials. △ Less

Submitted 21 April, 2020; originally announced April 2020.

Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge

Authors: Wen** Zhao, Zaiyao Fei, Tiancheng Song, Han Kyou Choi, Tauno Palomaki, Bosong Sun, Paul Malinowski, Michael A. McGuire, Jiun-Haw Chu, Xiaodong Xu, David H. Cobden

Abstract: The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials. The ability to simply stack very different two dimensional (2D) van der Waals materials in intimate contact permits a different approach. Here we use this approa… ▽ More The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials. The ability to simply stack very different two dimensional (2D) van der Waals materials in intimate contact permits a different approach. Here we use this approach to couple the helical edges states in a 2D topological insulator, monolayer WTe2, to a 2D layered antiferromagnet, CrI3. We find that the edge conductance is sensitive to the magnetization state of the CrI3, and the coupling can be understood in terms of an exchange field from the nearest and next-nearest CrI3 layers that produces a gap in the helical edge. We also find that the nonlinear edge conductance depends on the magnetization of the nearest CrI3 layer relative to the current direction. At low temperatures this produces an extraordinarily large nonreciprocal current that is switched by changing the antiferromagnetic state of the CrI3. △ Less

Submitted 2 January, 2020; originally announced January 2020.

Switching 2D Magnetic States via Pressure Tuning of Layer Stacking

Authors: Tiancheng Song, Zaiyao Fei, Matthew Yankowitz, Zhong Lin, Qianni Jiang, Kyle Hwangbo, Qi Zhang, Bosong Sun, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, David Graf, Ting Cao, Jiun-Haw Chu, David H. Cobden, Cory R. Dean, Di Xiao, Xiaodong Xu

Abstract: The physical properties of two-dimensional van der Waals (2D vdW) crystals depend sensitively on the interlayer coupling, which is intimately connected to the stacking arrangement and the interlayer spacing. For example, simply changing the twist angle between graphene layers can induce a variety of correlated electronic phases, which can be controlled further in a continuous manner by applying hy… ▽ More The physical properties of two-dimensional van der Waals (2D vdW) crystals depend sensitively on the interlayer coupling, which is intimately connected to the stacking arrangement and the interlayer spacing. For example, simply changing the twist angle between graphene layers can induce a variety of correlated electronic phases, which can be controlled further in a continuous manner by applying hydrostatic pressure to decrease the interlayer spacing. In the recently discovered 2D magnets, theory suggests that the interlayer exchange coupling strongly depends on layer separation, while the stacking arrangement can even change the sign of the magnetic exchange, thus drastically modifying the ground state. Here, we demonstrate pressure tuning of magnetic order in the 2D magnet CrI3. We probe the magnetic states using tunneling and scanning magnetic circular dichroism microscopy measurements. We find that the interlayer magnetic coupling can be more than doubled by hydrostatic pressure. In bilayer CrI3, pressure induces a transition from layered antiferromagnetic to ferromagnetic phases. In trilayer CrI3, pressure can create coexisting domains of three phases, one ferromagnetic and two distinct antiferromagnetic. The observed changes in magnetic order can be explained by changes in the stacking arrangement. Such coupling between stacking order and magnetism provides ample opportunities for designer magnetic phases and functionalities. △ Less

Submitted 26 May, 2019; originally announced May 2019.

Visualizing electrostatic gating effects in two-dimensional heterostructures

Authors: Paul V. Nguyen, Natalie C. Teutsch, Nathan P. Wilson, Joshua Kahn, Xue Xia, Viktor Kandyba, Alexei Barinov, Gabriel Constantinescu, Nicholas D. M. Hine, Xiaodong Xu, David H. Cobden, Neil R. Wilson

Abstract: The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body sp… ▽ More The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical potentials as a gate voltage is applied. One could also study intriguing physical phenomena such as electrically induced topological transitions and many-body spectral reconstructions. Here we show that submicron angle-resolved photoemission (micro-ARPES) applied to two-dimensional (2D) van der Waals heterostructures affords this ability. In graphene devices, we observe a shift of the chemical potential by 0.6 eV across the Dirac point as a gate voltage is applied. In several 2D semiconductors we see the conduction band edge appear as electrons accumulate, establishing its energy and momentum, and observe significant band-gap renormalization at low densities. We also show that micro-ARPES and optical spectroscopy can be applied to a single device, allowing rigorous study of the relationship between gate-controlled electronic and excitonic properties. △ Less

Submitted 15 April, 2019; originally announced April 2019.

Comments: Original manuscript with 9 pages with 4 figures in main text, 5 pages with 4 figures in supplement. Substantially edited manuscript accepted at Nature

Atomically Thin CrCl3: An in-Plane Layered Antiferromagnetic Insulator

Authors: Xinghan Cai, Tiancheng Song, Nathan P. Wilson, Genevieve Clark, Minhao He, Xiaoou Zhang, Takashi Taniguchi, Kenji Watanabe, Wang Yao, Di Xiao, Michael A. McGuire, David H. Cobden, Xiaodong Xu

Abstract: The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a la… ▽ More The recent discovery of magnetism in atomically thin layers of van der Waals (vdW) crystals has created new opportunities for exploring magnetic phenomena in the two-dimensional (2D) limit. In most 2D magnets studied to date the c-axis is an easy axis, so that at zero applied field the polarization of each layer is perpendicular to the plane. Here, we demonstrate that atomically thin CrCl3 is a layered antiferromagnetic insulator with an easy-plane normal to the c-axis, that is the polarization is in the plane of each layer and has no preferred direction within it. Ligand field photoluminescence at 870 nm is observed down to the monolayer limit, demonstrating its insulating properties. We investigate the in-plane magnetic order using tunneling magnetoresistance in graphene/CrCl3/graphene tunnel junctions, establishing that the interlayer coupling is antiferromagnetic down to the bilayer. From the temperature dependence of the magnetoresistance we obtain an effective magnetic phase diagram for the bilayer. Our result shows that CrCl3 should be useful for studying the physics of 2D phase transitions and for making new kinds of vdW spintronic devices. △ Less

Submitted 30 March, 2019; originally announced April 2019.

Gate-induced superconductivity in a monolayer topological insulator

Authors: Ebrahim Sajadi, Tauno Palomaki, Zaiyao Fei, Wen** Zhao, Philip Bement, Christian Olsen, Silvia Lüscher, Xiaodong Xu, Joshua A. Folk, David H. Cobden

Abstract: The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a… ▽ More The layered semimetal WTe_2 has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We report here that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic do**, at temperatures below 1 K. The 2D TI-superconductor transition can be easily driven by applying a just a small gate voltage. This discovery offers new possibilities for gate-controlled devices combining superconductivity and topology, and could provide a basis for quantum information schemes based on topological protection. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: manuscript only

Ferroelectric switching of a two-dimensional metal

Authors: Zaiyao Fei, Wen** Zhao, Tauno A. Palomaki, Bosong Sun, Moira K. Miller, Zhiying Zhao, Jiaqiang Yan, Xiaodong Xu, David H. Cobden

Abstract: A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, hel** to explain why polar metals are very rare. Screening also excludes external electric fields, apparently ruling out the possibility of polarity reversal and thus ferroelectric switching. In pri… ▽ More A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, hel** to explain why polar metals are very rare. Screening also excludes external electric fields, apparently ruling out the possibility of polarity reversal and thus ferroelectric switching. In principle, however, a thin enough polar metal could be penetrated by an electric field sufficiently to be switched. Here we show that the layered topological semimetal WTe2 provides the first embodiment of this principle. Although monolayer WTe2 is centrosymmetric and thus nonpolar, the stacked bulk structure is polar. We find that two- or three-layer WTe2 exhibits a spontaneous out-of-plane electric polarization which can be switched using gate electrodes. We directly detect and quantify the polarization using graphene as an electric field sensor. Moreover, the polarization states can be differentiated by conductivity, and the carrier density can be varied to modify the properties. The critical temperature is above 350 K, and even when WTe2 is sandwiched in graphene it retains its switching capability at room temperature, demonstrating a robustness suitable for applications in combination with other two-dimensional materials. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Imaging Quantum Spin Hall Edges in Monolayer WTe2

Authors: Yanmeng Shi, Joshua Kahn, Ben Niu, Zaiyao Fei, Bosong Sun, Xinghan Cai, Brian A. Francisco, Di Wu, Zhi-Xun Shen, Xiaodong Xu, David H. Cobden, Yong-Tao Cui

Abstract: A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have recently been reported for the first time in an atomically thin material, monolayer WTe2. Electrical transport measurements on exfoliated samples and scanning tunn… ▽ More A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have recently been reported for the first time in an atomically thin material, monolayer WTe2. Electrical transport measurements on exfoliated samples and scanning tunneling spectroscopy on epitaxially grown monolayer islands signal the existence of edge modes with conductance approaching the quantized value. Here, we directly image the local conductivity of monolayer WTe2 devices using microwave impedance microscopy, establishing beyond doubt that conduction is indeed strongly localized to the physical edges at temperatures up to 77 K and above. The edge conductivity shows no gap as a function of gate voltage, ruling out trivial conduction due to band bending or in-gap states, and is suppressed by magnetic field as expected. Interestingly, we observe additional conducting lines and rings within most samples which can be explained by edge states following boundaries between topologically trivial and non-trivial regions. These observations will be critical for interpreting and improving the properties of devices incorporating WTe2 or other air-sensitive 2D materials. At the same time, they reveal the robustness of the QSH channels and the potential to engineer and pattern them by chemical or mechanical means in the monolayer material platform. △ Less

Submitted 24 July, 2018; originally announced July 2018.

Comments: 9 pages, 4 figures

Journal ref: Science Advances 08 Feb 2019: Vol. 5, no. 2, eaat8799

Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction

Authors: Tiancheng Song, Matisse Wei-Yuan Tu, Caitlin Carnahan, Xinghan Cai, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, David H. Cobden, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of anti-aligned spin filters which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR).… ▽ More Atomically thin chromium triiodide (CrI3) has recently been identified as a layered antiferromagnetic insulator, in which adjacent ferromagnetic monolayers are antiferromagnetically coupled. This unusual magnetic structure naturally comprises a series of anti-aligned spin filters which can be utilized to make spin-filter magnetic tunnel junctions with very large tunneling magnetoresistance (TMR). Here we report voltage control of TMR formed by four-layer CrI3 sandwiched by monolayer graphene contacts in a dual-gated structure. By varying the gate voltages at fixed magnetic field, the device can be switched reversibly between bistable magnetic states with the same net magnetization but drastically different resistance (by a factor of ten or more). In addition, without switching the state, the TMR can be continuously modulated between 17,000% and 57,000%, due to the combination of spin-dependent tunnel barrier with changing carrier distributions in the graphene contacts. Our work demonstrates new kinds of magnetically moderated transistor action and opens up possibilities for voltage-controlled van der Waals spintronic devices. △ Less

Submitted 13 July, 2018; originally announced July 2018.

Two-Dimensional Itinerant Ising Ferromagnetism in Atomically thin Fe3GeTe2

Authors: Zaiyao Fei, Bevin Huang, Paul Malinowski, Wenbo Wang, Tiancheng Song, Joshua Sanchez, Wang Yao, Di Xiao, Xiaoyang Zhu, Andrew May, Weida Wu, David Cobden, Jiun-Haw Chu, Xiaodong Xu

Abstract: Recent discoveries of intrinsic two-dimensional (2D) ferromagnetism in insulating/semiconducting van der Waals (vdW) crystals open up new possibilities for studying fundamental 2D magnetism and devices employing localized spins. However, a vdW material that exhibits 2D itinerant magnetism remains elusive. In fact, the synthesis of such single-crystal ferromagnetic metals with strong perpendicular… ▽ More Recent discoveries of intrinsic two-dimensional (2D) ferromagnetism in insulating/semiconducting van der Waals (vdW) crystals open up new possibilities for studying fundamental 2D magnetism and devices employing localized spins. However, a vdW material that exhibits 2D itinerant magnetism remains elusive. In fact, the synthesis of such single-crystal ferromagnetic metals with strong perpendicular anisotropy at the atomically thin limit has been a long-standing challenge. Here, we demonstrate that monolayer Fe3GeTe2 is a robust 2D itinerant ferromagnet with strong out-of-plane anisotropy. Layer-dependent studies reveal a crossover from 3D to 2D Ising ferromagnetism for thicknesses less than 4 nm (five layers), accompanying a fast drop of the Curie temperature from 207 K down to 130 K in the monolayer. For Fe3GeTe2 flakes thicker than ~15 nm, a peculiar magnetic behavior emerges within an intermediate temperature range, which we show is due to the formation of labyrinthine domain patterns. Our work introduces a novel atomically thin ferromagnetic metal that could be useful for the study of controllable 2D itinerant Ising ferromagnetism and for engineering spintronic vdW heterostructures. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Comments: 12 pages, 4 figures

Electrical Control of 2D Magnetism in Bilayer CrI3

Authors: Bevin Huang, Genevieve Clark, Dahlia R. Klein, David MacNeill, Efren Navarro-Moratalla, Kyle L. Seyler, Nathan Wilson, Michael A. McGuire, David H. Cobden, Di Xiao, Wang Yao, Pablo Jarillo-Herrero, Xiaodong Xu

Abstract: The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a ma… ▽ More The challenge of controlling magnetism using electric fields raises fundamental questions and addresses technological needs such as low-dissipation magnetic memory. The recently reported two-dimensional (2D) magnets provide a new system for studying this problem owing to their unique magnetic properties. For instance, bilayer chromium triiodide (CrI3) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states which exhibit spin-layer locking, leading to a remarkable linear dependence of their MOKE signals on gate voltage with opposite slopes. Our results pave the way for exploring new magnetoelectric phenomena and van der Waals spintronics based on 2D materials. △ Less

Submitted 17 March, 2018; v1 submitted 20 February, 2018; originally announced February 2018.

Comments: To appear in Nature Nanotechnology

Giant Tunneling Magnetoresistance in Spin-Filter van der Waals Heterostructures

Authors: Tiancheng Song, Xinghan Cai, Matisse Wei-Yuan Tu, Xiaoou Zhang, Bevin Huang, Nathan P. Wilson, Kyle L. Seyler, Lin Zhu, Takashi Taniguchi, Kenji Watanabe, Michael A. McGuire, David H. Cobden, Di Xiao, Wang Yao, Xiaodong Xu

Abstract: Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunnelin… ▽ More Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here we report novel multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI3) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance which is drastically enhanced with increasing CrI3 layer thickness, reaching a record 19,000% for magnetic multilayer structures using four-layer sf-MTJs at low temperatures. These devices also show multiple resistance states as a function of magnetic field, suggesting the potential for multi-bit functionalities using an individual vdW sf-MTJ. Using magnetic circular dichroism measurements, we attribute these effects to the intrinsic layer-by-layer antiferromagnetic ordering of the atomically thin CrI3. Our work reveals the possibility to push magnetic information storage to the atomically thin limit, and highlights CrI3 as a superlative magnetic tunnel barrier for vdW heterostructure spintronic devices. △ Less

Submitted 26 January, 2018; originally announced January 2018.

Comments: Submitted

Ligand-field helical luminescence in a 2D ferromagnetic insulator

Authors: Kyle L. Seyler, Ding Zhong, Dahlia R. Klein, Shiyuan Gao, Xiaoou Zhang, Bevin Huang, Efren Navarro-Moratalla, Li Yang, David H. Cobden, Michael A. McGuire, Wang Yao, Di Xiao, Pablo Jarillo-Herrero, Xiaodong Xu

Abstract: Bulk chromium triiodide (CrI$_3$) has long been known as a layered van der Waals ferromagnet. However, its monolayer form was only recently isolated and confirmed to be a truly two-dimensional (2D) ferromagnet, providing a new platform for investigating light-matter interactions and magneto-optical phenomena in the atomically thin limit. Here, we report spontaneous circularly polarized photolumine… ▽ More Bulk chromium triiodide (CrI$_3$) has long been known as a layered van der Waals ferromagnet. However, its monolayer form was only recently isolated and confirmed to be a truly two-dimensional (2D) ferromagnet, providing a new platform for investigating light-matter interactions and magneto-optical phenomena in the atomically thin limit. Here, we report spontaneous circularly polarized photoluminescence in monolayer CrI$_3$ under linearly polarized excitation, with helicity determined by the monolayer magnetization direction. In contrast, the bilayer CrI$_3$ photoluminescence exhibits vanishing circular polarization, supporting the recently uncovered anomalous antiferromagnetic interlayer coupling in CrI$_3$ bilayers. Distinct from the Wannier-Mott excitons that dominate the optical response in well-known 2D van der Waals semiconductors, our absorption and layer-dependent photoluminescence measurements reveal the importance of ligand-field and charge-transfer transitions to the optoelectronic response of atomically thin CrI$_3$. We attribute the photoluminescence to a parity-forbidden d-d transition characteristic of Cr$^{3+}$ complexes, which displays broad linewidth due to strong vibronic coupling and thickness-independent peak energy due to its localized molecular orbital nature. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Comments: 12 pages of main text, 4 figures, 6 pages of supplementary materials

Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit

Authors: Bevin Huang, Genevieve Clark, Efren Navarro-Moratalla, Dahlia R. Klein, Ran Cheng, Kyle L. Seyler, Ding Zhong, Emma Schmidgall, Michael A. McGuire, David H. Cobden, Wang Yao, Di Xiao, Pablo Jarillo-Herrero, Xiaodong Xu

Abstract: Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semi-metals with edge transport. Despite this pro… ▽ More Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semi-metals with edge transport. Despite this progress, there is still no 2D crystal with intrinsic magnetism, which would be useful for many technologies such as sensing, information, and data storage. Theoretically, magnetic order is prohibited in the 2D isotropic Heisenberg model at finite temperatures by the Mermin-Wagner theorem. However, magnetic anisotropy removes this restriction and enables, for instance, the occurrence of 2D Ising ferromagnetism. Here, we use magneto-optical Kerr effect (MOKE) microscopy to demonstrate that monolayer chromium triiodide (CrI3) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 K is only slightly lower than the 61 K of the bulk crystal, consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phase transition, showcasing the hallmark thickness-dependent physical properties typical of van der Waals crystals. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, while in trilayer the interlayer ferromagnetism observed in the bulk crystal is restored. Our work creates opportunities for studying magnetism by harnessing the unique features of atomically-thin materials, such as electrical control for realizing magnetoelectronics, and van der Waals engineering for novel interface phenomena. △ Less

Submitted 3 April, 2017; v1 submitted 17 March, 2017; originally announced March 2017.

Comments: To appear in Nature

Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction

Authors: Jason S. Ross, Pasqual Rivera, John Schaibley, Eric Lee-Wong, Hongyi Yu, Takashi Taniguchi, Kenji Watanabe, Jiaqiang Yan, David Mandrus, David Cobden, Wang Yao, Xiaodong Xu

Abstract: Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb-bound electrons and holes… ▽ More Semiconductor heterostructures are backbones for solid state based optoelectronic devices. Recent advances in assembly techniques for van der Waals heterostructures has enabled the band engineering of semiconductor heterojunctions for atomically thin optoelectronic devices. In two-dimensional heterostructures with type II band alignment, interlayer excitons, where Coulomb-bound electrons and holes are confined to opposite layers, have shown promising properties for novel excitonic devices, including a large binding energy, micron-scale in-plane drift-diffusion, and long population and valley polarization lifetime. Here, we demonstrate interlayer exciton optoelectronics based on electrostatically defined lateral p-n junctions in a MoSe2-WSe2 heterobilayer. Applying a forward bias enables the first observation of electroluminescence from interlayer excitons. At zero bias, the p-n junction functions as a highly sensitive photodetector, where the wavelength-dependent photocurrent measurement allows the direct observation of resonant optical excitation of the interlayer exciton. The resulting photocurrent amplitude from the interlayer exciton is about 200 times smaller compared to the resonant excitation of intralayer exciton. This implies that the interlayer exciton oscillator strength is two orders of magnitude smaller than that of the intralayer exciton due to the spatial separation of electron and hole to opposite layers. These results lay the foundation for exploiting the interlayer exciton in future 2D heterostructure optoelectronic devices. △ Less

Submitted 3 January, 2017; originally announced January 2017.

Comments: Nano Letters: http://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.6b03398

Many-body effects in nonlinear optical responses of 2D layered semiconductors

Authors: Grant Aivazian, Hongyi Yu, Sanfeng Wu, Jiaqiang Yan, David G. Mandrus, David Cobden, Wang Yao, Xiaodong Xu

Abstract: We performed ultrafast degenerate pump-probe spectroscopy on monolayer WSe2 near its exciton resonance. The observed differential reflectance signals exhibit signatures of strong many-body interactions including the exciton-exciton interaction and free carrier induced band gap renormalization. The exciton-exciton interaction results in a resonance blue shift which lasts for the exciton lifetime (s… ▽ More We performed ultrafast degenerate pump-probe spectroscopy on monolayer WSe2 near its exciton resonance. The observed differential reflectance signals exhibit signatures of strong many-body interactions including the exciton-exciton interaction and free carrier induced band gap renormalization. The exciton-exciton interaction results in a resonance blue shift which lasts for the exciton lifetime (several ps), while the band gap renormalization manifests as a resonance red shift with several tens ps lifetime. Our model based on the many-body interactions for the nonlinear optical susceptibility fits well the experimental observations. The power dependence of the spectra shows that with the increase of pump power, the exciton population increases linearly and then saturates, while the free carrier density increases superlinearly, implying that exciton Auger recombination could be the origin of these free carriers. Our model demonstrates a simple but efficient method for quantitatively analyzing the spectra, and indicates the important role of Coulomb interactions in nonlinear optical responses of such 2D materials. △ Less

Submitted 8 December, 2016; originally announced December 2016.

Journal ref: 2D Mater. 4, 025024 (2017)

Edge conduction in monolayer WTe2

Authors: Zaiyao Fei, Tauno Palomaki, Sanfeng Wu, Wen** Zhao, Xinghan Cai, Bosong Sun, Paul Nguyen, Joseph Finney, Xiaodong Xu, David H. Cobden

Abstract: A two-dimensional topological insulator (2DTI) is guaranteed to have a helical 1D edge mode in which spin is locked to momentum, producing the quantum spin Hall effect and prohibiting elastic backscattering at zero magnetic field. No monolayer material has yet been shown to be a 2DTI, but recently the Weyl semimetal WTe2 was predicted to become a 2DTI in monolayer form if a bulk gap opens. Here, w… ▽ More A two-dimensional topological insulator (2DTI) is guaranteed to have a helical 1D edge mode in which spin is locked to momentum, producing the quantum spin Hall effect and prohibiting elastic backscattering at zero magnetic field. No monolayer material has yet been shown to be a 2DTI, but recently the Weyl semimetal WTe2 was predicted to become a 2DTI in monolayer form if a bulk gap opens. Here, we report that at temperatures below about 100 K monolayer WTe2 does become insulating in its interior, while the edges still conduct. The edge conduction is strongly suppressed by in-plane magnetic field and is independent of gate voltage, save for mesoscopic fluctuations that grow on cooling due to a zero-bias anomaly which reduces the linear-response conductance. Bilayer WTe2 also becomes insulating at low temperatures but does not show edge conduction. Many of these observations are consistent with monolayer WTe2 being a 2DTI. However, the low temperature edge conductance, for contacts spacings down to 150 nm, is below the quantized value, △ Less

Submitted 12 December, 2016; v1 submitted 25 October, 2016; originally announced October 2016.

Comments: 10 pages of main text plus 8 pages of supplementary materials

Visualization of one-dimensional diffusion and spontaneous segregation of hydrogen in single crystals of VO2

Authors: T. Serkan Kasırga, Jim M. Coy, Jae H. Park, David H. Cobden

Abstract: Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in single-crystal nanobeams and plates of VO2, exploiting the fact that hydrogen do** in this material leads to visible darkening near room temperature connected with the metal-insulator transition at 65 °C. We observe hydroge… ▽ More Hydrogen intercalation in solids is common, complicated, and very difficult to monitor. In a new approach to the problem, we have studied the profile of hydrogen diffusion in single-crystal nanobeams and plates of VO2, exploiting the fact that hydrogen do** in this material leads to visible darkening near room temperature connected with the metal-insulator transition at 65 °C. We observe hydrogen diffusion along the rutile c-axis but not perpendicular to it, making this a highly one-dimensional diffusion system. We obtain an activated diffusion coefficient, ~0.01 e^(-0.6 eV/k_B T) cm2sec-1, applicable in metallic phase. In addition, we observe dramatic supercooling of the hydrogen-induced metallic phase and spontaneous segregation of the hydrogen into stripes implying that the diffusion process is highly nonlinear, even in the absence of defects. Similar complications may occur in hydrogen motion in other materials but are not revealed by conventional measurement techniques. △ Less

Submitted 27 June, 2016; originally announced June 2016.

Band parameters and hybridization in 2D semiconductor heterostructures from photoemission spectroscopy

Authors: Neil R. Wilson, Paul V. Nguyen, Kyle L. Seyler, Pasqual Rivera, Alexander J. Marsden, Zachary P. L. Laker, Gabriel C. Constantinescu, Viktor Kandyba, Alexei Barinov, Nicholas D. M. Hine, Xiaodong Xu, David H. Cobden

Abstract: Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of an… ▽ More Combining monolayers of different two-dimensional (2D) semiconductors into heterostructures opens up a wealth of possibilities for novel electronic and optical functionalities. Exploiting them hinges on accurate measurements of the band parameters and orbital hybridization in separate and stacked monolayers, many of which are only available as small samples. The recently introduced technique of angle-resolved photoemission spectroscopy with submicron spatial resolution (μ-ARPES) offers the capability to measure small samples, but the energy resolution obtained for such exfoliated samples to date (~0.5 eV) has been inadequate. Here, we show that by suitable heterostructure sample design the full potential of μ-ARPES can be realized. We focus on MoSe2/WSe2 van der Waals heterostructures, which are 2D analogs of 3D semiconductor heterostructures. We find that in a MoSe2/WSe2 heterobilayer the bands in the K valleys are weakly hybridized, with the conduction and valence band edges originating in the MoSe2 and WSe2 respectively. There is stronger hybridization at the Γ point, but the valence band edge remains at the K points. This is consistent with the recent observation of interlayer excitons where the electron and hole are valley polarized but in opposite layers. We determine the valence band offset to be 300 meV, which combined with photoluminescence measurements implies that the binding energy of interlayer excitons is at least 200 meV, comparable with that of intralayer excitons. △ Less

Submitted 21 January, 2016; originally announced January 2016.

Comments: 10 pages, 4 figures; + 14 pages, 8 figures in supplementary

Photo-Nernst current in graphene

Authors: Helin Cao, Grant Aivazian, Zaiyao Fei, Jason Ross, David H. Cobden, Xiaodong Xu

Abstract: Photocurrent measurements provide a powerful means of studying the spatially resolved optoelectronic and electrical properties of a material or device. Generally speaking there are two classes of mechanism for photocurrent generation: those involving separation of electrons and holes, and thermoelectric effects driven by electron temperature gradients. Here we introduce a new member in the latter… ▽ More Photocurrent measurements provide a powerful means of studying the spatially resolved optoelectronic and electrical properties of a material or device. Generally speaking there are two classes of mechanism for photocurrent generation: those involving separation of electrons and holes, and thermoelectric effects driven by electron temperature gradients. Here we introduce a new member in the latter class: the photo-Nernst effect. In graphene devices in a perpendicular magnetic field we observe photocurrent generated uniformly along the free edges, with opposite sign at opposite edges. The signal is antisymmetric in field, shows a peak versus gate voltage at the neutrality point flanked by wings of opposite sign at low fields, and exhibits quantum oscillations at higher fields. These features are all explained by the Nernst effect associated with laser-induced electron heating. This photo-Nernst current provides a simple and clear demonstration of the Shockley-Ramo nature of long-range photocurrent generation in a gapless material. △ Less

Submitted 2 October, 2015; originally announced October 2015.

Comments: 9 pages + 5 supplementary; submitted to Nature Physics

Surface electron perturbations and the collective behavior of atoms adsorbed on a cylinder

Authors: Boris Dzyubenko, Hao-Chun Lee, Oscar E. Vilches, David H. Cobden

Abstract: A single-walled carbon nanotube presents a seamless cylindrical graphene surface and is thus an ideal adsorption substrate for investigating the physics of atoms and molecules in two dimensions and approaching the one-dimensional limit. When a suspended nanotube is made into a transistor, frequency shifts of its mechanical resonances allow precise measurement of the adsorbed mass down to the singl… ▽ More A single-walled carbon nanotube presents a seamless cylindrical graphene surface and is thus an ideal adsorption substrate for investigating the physics of atoms and molecules in two dimensions and approaching the one-dimensional limit. When a suspended nanotube is made into a transistor, frequency shifts of its mechanical resonances allow precise measurement of the adsorbed mass down to the single-atom level. Here we show that its electrical characteristics are also modified by the adsorbed atoms and molecules, partly as a result of a small charge transfer between them and the carbon surface. We quantify this charge transfer, finding it similar for many different species, and use the associated sensitivity of the conductance to carry out studies of phase transitions, critical scaling, dynamical fluctuations, and dissipative metastable states in a system of interacting atoms confined to a cylindrical geometry. △ Less

Submitted 6 April, 2015; v1 submitted 5 April, 2015; originally announced April 2015.

Comments: 12 pages main text including 8 figures; 8 pages of supplementary material appended

Inhomogeneity in the ultrafast insulator-to-metal transition dynamics in VO$_2$

Authors: Brian T. O'Callahan, Joanna M. Atkin, Andrew C. Jones, Jae Hyung Park, David Cobden, Markus B. Raschke

Abstract: The insulator-to-metal transition (IMT) of the simple binary compound of vanadium dioxide VO$_2$ at $\sim 340$ K has been puzzling since its discovery more than five decades ago. A wide variety of photon and electron probes have been applied in search of a satisfactory microscopic mechanistic explanation. However, many of the conclusions drawn have implicitly assumed a {\em homogeneous} material r… ▽ More The insulator-to-metal transition (IMT) of the simple binary compound of vanadium dioxide VO$_2$ at $\sim 340$ K has been puzzling since its discovery more than five decades ago. A wide variety of photon and electron probes have been applied in search of a satisfactory microscopic mechanistic explanation. However, many of the conclusions drawn have implicitly assumed a {\em homogeneous} material response. Here, we reveal inherently {\em inhomogeneous} behavior in the study of the dynamics of individual VO$_2$ micro-crystals using a combination of femtosecond pump-probe microscopy with nano-IR imaging. The time scales of the photoinduced bandgap reorganization in the ultrafast IMT vary from $\simeq 40 \pm 8$ fs, i.e., shorter than a suggested phonon bottleneck, to $\sim 200\pm20$ fs, with an average value of $80 \pm 25$ fs, similar to results from previous studies on polycrystalline thin films. The variation is uncorrelated with crystal size, orientation, transition temperature, and initial insulating phase. This together with details of the nano-domain behavior during the thermally-induced IMT suggests a significant sensitivity to local variations in, e.g., do**, defects, and strain of the microcrystals. The combination of results points to an electronic mechanism dominating the photoinduced IMT in VO$_2$, but also highlights the difficulty of deducing mechanistic information where the intrinsic response in correlated matter may not yet have been reached. △ Less

Submitted 17 December, 2014; originally announced December 2014.

Magnetic Control of Valley Pseudospin in Monolayer WSe2

Authors: Grant Aivazian, Zhirui Gong, Aaron M Jones, Rui-Lin Chu, Jiaqiang Yan, David G Mandrus, Chuanwei Zhang, David Cobden, Wang Yao, Xiaodong Xu

Abstract: Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and th… ▽ More Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment which underlies the valley-dependent circular dichroism that allows optical generation of valley polarization, intervalley quantum coherence, and the valley Hall effect. However, magnetic manipulation of valley pseudospin via this magnetic moment, analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magnetic tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe2. Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions. △ Less

Submitted 9 July, 2014; originally announced July 2014.

Lateral heterojunctions within monolayer semiconductors

Authors: Chunming Huang, Sanfeng Wu, Ana M. Sanchez, Jonathan J. P. Peters, Richard Beanland, Jason S. Ross, Pasqual Rivera, Wang Yao, David H. Cobden, Xiaodong Xu

Abstract: Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we d… ▽ More Heterojunctions between three-dimensional (3D) semiconductors with different bandgaps are the basis of modern light-emitting diodes, diode lasers, and high-speed transistors. Creating analogous heterojunctions between different two-dimensional (2D) semiconductors would enable band engineering within the 2D plane and open up new realms in materials science, device physics and engineering. Here we demonstrate that seamless high-quality in-plane heterojunctions can be grown between the 2D monolayer semiconductors MoSe2 and WSe2. The junctions, grown by lateral hetero-epitaxy using physical vapor transport, are visible in an optical microscope and show enhanced photoluminescence. Atomically resolved transmission electron microscopy reveals that their structure is an undistorted honeycomb lattice in which substitution of one transition metal by another occurs across the interface. The growth of such lateral junctions will allow new device functionalities, such as in-plane transistors and diodes, to be integrated within a single atomically thin layer. △ Less

Submitted 12 June, 2014; originally announced June 2014.

Comments: 14 pages manuscript + 12 pages supplementary information

Electrically Tunable Excitonic Light Emitting Diodes based on Monolayer WSe2 p-n Junctions

Authors: Jason S. Ross, Philip Klement, Aaron M. Jones, Nirmal J. Ghimire, Jiaqiang Yan, D. G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Kenji Kitamura, Wang Yao, David H Cobden, Xiaodong Xu

Abstract: Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications… ▽ More Light-emitting diodes are of importance for lighting, displays, optical interconnects, logic and sensors. Hence the development of new systems that allow improvements in their efficiency, spectral properties, compactness and integrability could have significant ramifications. Monolayer transition metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has already been observed from monolayer MoS2 devices. However, the electroluminescence efficiency was low and the linewidth broad due both to the poor optical quality of MoS2 and to ineffective contacts. Here, we report electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath. This structure allows effective injection of electrons and holes, and combined with the high optical quality of WSe2 it yields bright electroluminescence with 1000 times smaller injection current and 10 times smaller linewidth than in MoS2. Furthermore, by increasing the injection bias we can tune the electroluminescence between regimes of impurity-bound, charged, and neutral excitons. This system has the required ingredients for new kinds of optoelectronic devices such as spin- and valley-polarized light-emitting diodes, on-chip lasers, and two-dimensional electro-optic modulators. △ Less

Submitted 3 March, 2014; v1 submitted 4 December, 2013; originally announced December 2013.

Comments: 13 pages main text with 4 figures + 4 pages upplemental materials

Measurement of a solid-state triple point at the metal-insulator transition in VO2

Authors: Jae Hyung Park, Jim M. Coy, T. Serkan Kasirga, Chunming Huang, Zaiyao Fei, Scott Hunter, David H. Cobden

Abstract: First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain structure, hysteresis, and cracking. The situation is still worse near a triple point where more than two phases are involved. The famous metal-insulator transition (M… ▽ More First-order phase transitions in solids are notoriously challenging to study. The combination of change in unit cell shape, long range of elastic distortion, and flow of latent heat leads to large energy barriers resulting in domain structure, hysteresis, and cracking. The situation is still worse near a triple point where more than two phases are involved. The famous metal-insulator transition (MIT) in vanadium dioxide, a popular candidate for ultrafast optical and electrical switching applications, is a case in point. Even though VO2 is one of the simplest strongly correlated materials, experimental difficulties posed by the first-order nature of the MIT as well as the involvement of at least two competing insulating phases have led to persistent controversy about its nature. Here, we show that studying single-crystal VO2 nanobeams in a purpose-built nanomechanical strain apparatus allows investigation of this prototypical phase transition with unprecedented control and precision. Our results include the striking finding that the triple point of the metallic and two insulating phases is at the transition temperature, T_tr = T_c, which we determine to be 65.0 +- 0.1 C. The findings have profound implications for the mechanism of the MIT in VO2, but in addition they demonstrate the importance of such an approach for mastering phase transitions in many other strongly correlated materials, such as manganites and iron-based superconductors. △ Less

Submitted 21 August, 2013; originally announced August 2013.

Comments: 15 pages including figures and supplementary information

Journal ref: Nature 500, 431 (22 August 2013)

Anisotropic Infrared Response of Vanadium Dioxide Microcrystals

Authors: T. J. Huffman, Peng Xu, M. M. Qazilbash, E. J. Walter, H. Krakauer, Jiang Wei, D. H. Cobden, H. A. Bechtel, M. C. Martin, G. L. Carr, D. N. Basov

Abstract: Vanadium dioxide (VO2) undergoes a phase transition at a temperature of 340 K between an insulating monoclinic M1 phase and a conducting rutile phase. Accurate measurements of possible anisotropy of the electronic properties and phonon features of VO2 in the insulating monoclinic M1 and metallic rutile phases are a prerequisite for understanding the phase transition in this correlated system. Rece… ▽ More Vanadium dioxide (VO2) undergoes a phase transition at a temperature of 340 K between an insulating monoclinic M1 phase and a conducting rutile phase. Accurate measurements of possible anisotropy of the electronic properties and phonon features of VO2 in the insulating monoclinic M1 and metallic rutile phases are a prerequisite for understanding the phase transition in this correlated system. Recently, it has become possible to grow single domain untwinned VO2 microcrystals which makes it possible to investigate the true anisotropy of VO2. We performed polarized transmission infrared micro-spectroscopy on these untwinned microcrystals in the spectral range between 200 cm-1 and 6000 cm-1 and have obtained the anisotropic phonon parameters and low frequency electronic properties in the insulating monoclinic M1 and metallic rutile phases. We have also performed ab initio GGA+U total energy calculations of phonon frequencies for both phases. We find our measurements and calculations to be in good agreement. △ Less

Submitted 23 July, 2013; originally announced July 2013.

Comments: 19 pages, 7 figures, 4 tables

Journal ref: Phys. Rev. B 87, 115121 (2013)

Vapor-Solid Growth of High Optical Quality MoS2 Monolayers With Near-Unity Valley Polarization

Authors: Sanfeng Wu, Chunming Huang, Grant Aivazian, Jason S Ross, David H Cobden, Xiaodong Xu

Abstract: Monolayers of transition metal dichalcogenides (TMDCs) are atomically thin direct-gap semiconductors with potential applications in nanoelectronics, optoelectronics, and electrochemical sensing. Recent theoretical and experimental efforts suggest that they are ideal systems for exploiting the valley degrees of freedom of Bloch electrons. For example, Dirac valley polarization has been demonstrated… ▽ More Monolayers of transition metal dichalcogenides (TMDCs) are atomically thin direct-gap semiconductors with potential applications in nanoelectronics, optoelectronics, and electrochemical sensing. Recent theoretical and experimental efforts suggest that they are ideal systems for exploiting the valley degrees of freedom of Bloch electrons. For example, Dirac valley polarization has been demonstrated in mechanically exfoliated monolayer MoS2 samples by polarization-resolved photoluminescence, although polarization has rarely been seen at room temperature. Here we report a new method for synthesizing high optical quality monolayer MoS2 single crystals up to 25 microns in size on a variety of standard insulating substrates (SiO2, sapphire and glass) using a catalyst-free vapor-solid growth mechanism. The technique is simple and reliable, and the optical quality of the crystals is extremely high, as demonstrated by the fact that the valley polarization approaches unity at 30 K and persists at 35% even at room temperature, suggesting a virtual absence of defects. This will allow greatly improved optoelectronic TMDC monolayer devices to be fabricated and studied routinely. △ Less

Submitted 22 February, 2013; originally announced February 2013.

Comments: 14 pages (manuscript) + 4 pages (supplementary materials), including 6 figures in manuscript. To appear in ACS Nano

Photoresponse of a strongly correlated material determined by scanning photocurrent microscopy

Authors: T. Serkan Kasirga, Dong Sun, Jae H. Park, Jim M. Coy, Zaiyao Fei, Xiaodong Xu, David H. Cobden

Abstract: The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with strong electron-electron and electron-phonon correlations it is unclear what physics will dominate the photoresponse. Here we investigate photocurrent in a vanadium… ▽ More The generation of a current by light is a key process in optoelectronic and photovoltaic devices. In band semiconductors, depletion fields associated with interfaces separate long-lived photo-induced carriers. However, in systems with strong electron-electron and electron-phonon correlations it is unclear what physics will dominate the photoresponse. Here we investigate photocurrent in a vanadium dioxide, an exemplary strongly correlated material known for its dramatic metal-insulator transition (MIT) at Tc = 68 C which could be useful for optoelectronic detection and switching up to ultraviolet wavelengths. Using scanning photocurrent microscopy (SPCM) on individual suspended VO2 nanobeams we observe photoresponse peaked at the metal-insulator boundary but extended throughout both insulating and metallic phases. We determine that the response is photo-thermal, implying efficient carrier relaxation to a local equilibrium in a manner consistent with strong correlations. Temperature dependent measurements reveal subtle phase changes within the insulating state. We further demonstrate switching of the photocurrent by optical control of the metal-insulator boundary arrangement. Our work shows the value of SPCM applied to nanoscale crystals for investigating strongly correlated materials, and the results are relevant for designing and controlling optoelectronic devices employing such materials. △ Less

Submitted 5 September, 2012; v1 submitted 4 September, 2012; originally announced September 2012.

Comments: 8 pages of manuscript plus 6 of supplementary materials

Electrical Tuning of Valley Magnetic Moment via Symmetry Control

Authors: Sanfeng Wu, Jason S Ross, Grant Aivazian, Aaron Jones, Zaiyao Fei, Gui-Bin Liu, Wenguang Zhu, Di Xiao, Wang Yao, David Cobden, Xiaodong Xu

Abstract: Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In princ… ▽ More Crystal symmetry governs the nature of electronic Bloch states. For example, in the presence of time reversal symmetry, the orbital magnetic moment and Berry curvature of the Bloch states must vanish unless inversion symmetry is broken. In certain 2D electron systems such as bilayer graphene, the intrinsic inversion symmetry can be broken simply by applying a perpendicular electric field. In principle, this offers the remarkable possibility of switching on/off and continuously tuning the magnetic moment and Berry curvature near the Dirac valleys by reversible electrical control. Here we demonstrate this principle for the first time using bilayer MoS2, which has the same symmetry as bilayer graphene but has a bandgap in the visible that allows direct optical probing of these Berry-phase related properties. We show that the optical circular dichroism, which reflects the orbital magnetic moment in the valleys, can be continuously tuned from -15% to 15% as a function of gate voltage in bilayer MoS2 field-effect transistors. In contrast, the dichroism is gate-independent in monolayer MoS2, which is structurally non-centrosymmetric. Our work demonstrates the ability to continuously vary orbital magnetic moments between positive and negative values via symmetry control. This represents a new approach to manipulating Berry-phase effects for applications in quantum electronics associated with 2D electronic materials. △ Less

Submitted 29 August, 2012; originally announced August 2012.

Comments: 13 pages main text + 4 pages supplementary materials

New Aspects of Photocurrent Generation at Graphene pn Junctions Revealed by Ultrafast Optical Measurements

Authors: Dong Sun, Grant Aivazian, Aaron M. Jones, Wang Yao, David Cobden, Xiaodong Xu

Abstract: The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measu… ▽ More The unusual electrical and optical properties of graphene make it a promising candidate for optoelectronic applications. An important, but as yet unexplored aspect is the role of photo-excited hot carriers in charge and energy transport at graphene interfaces. Here, we perform time-resolved (~250 fs) scanning photocurrent microscopy on a tunable graphene pn junction. The ultrafast pump-probe measurements yield a photocurrent response time of ~1.5 ps at room temperature increasing to ~4 ps at 20 K. Combined with the negligible dependence of photocurrent amplitude on environmental temperature this implies that hot carriers rather than phonons dominate energy transport at high frequencies. Gate-dependent pump-probe measurements demonstrate that both thermoelectric and built-in electric field effects contribute to the photocurrent excited by laser pulses. The relative weight of each contribution depends on the junction configuration. A single laser beam excitation also displays multiple polarity-reversals as a function of carrier density, a signature of impact ionization. Our results enhance the understanding of non-equilibrium electron dynamics, electron-electron interactions, and electron-phonon interactions in graphene. They also determine fundamental limits on ultrafast device operation speeds (~500 GHz) for potential graphene-based photon detection, sensing, and communication. △ Less

Submitted 16 August, 2011; originally announced August 2011.

Comments: 12 pages, 4 figures, submitted to Nature Nanotechnology

Phase transitions on the surface of a carbon nanotube

Authors: Zenghui Wang, Jiang Wei, Peter Morse, J. Gregory Dash, Oscar E. Vilches, David H. Cobden

Abstract: A suspended carbon nanotube can act as a nanoscale resonator with remarkable electromechanical properties and the ability to detect adsorption on its surface at the level of single atoms. Understanding adsorption on nanotubes and other graphitic materials is key to many sensing and storage applications. Here we show that nanotube resonators offer a powerful new means of investigating fundamental… ▽ More A suspended carbon nanotube can act as a nanoscale resonator with remarkable electromechanical properties and the ability to detect adsorption on its surface at the level of single atoms. Understanding adsorption on nanotubes and other graphitic materials is key to many sensing and storage applications. Here we show that nanotube resonators offer a powerful new means of investigating fundamental aspects of adsorption on carbon, including the collective behaviour of adsorbed matter and its coupling to the substrate electrons. By monitoring the vibrational resonance frequency in the presence of noble gases, we observe the formation of monolayers on the cylindrical surface and phase transitions within these monolayers, and simultaneous modification of the electrical conductance. The monolayer observations also demonstrate the possibility of studying the fundamental behaviour of matter in cylindrical geometry. △ Less

Submitted 3 September, 2009; originally announced September 2009.

Comments: Unpublished; 7 pages with 4 figures plus 3 pages of supplementary material

Journal ref: Science 372 552 (2010)

Metal-insulator transition in vanadium dioxide nanobeams: probing sub-domain properties of strongly correlated materials

Authors: Jiang Wei, Zenghui Wang, Wei Chen, David H. Cobden

Abstract: Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure or compositional variations. An important potential advantage of nanoscale samples is that they exhibit the homogeneous properties, which can differ greatly fr… ▽ More Many strongly correlated electronic materials, including high-temperature superconductors, colossal magnetoresistance and metal-insulator-transition (MIT) materials, are inhomogeneous on a microscopic scale as a result of domain structure or compositional variations. An important potential advantage of nanoscale samples is that they exhibit the homogeneous properties, which can differ greatly from those of the bulk. We demonstrate this principle using vanadium dioxide, which has domain structure associated with its dramatic MIT at 68 degrees C. Our studies of single-domain vanadium dioxide nanobeams reveal new aspects of this famous MIT, including supercooling of the metallic phase by 50 degrees C; an activation energy in the insulating phase consistent with the optical gap; and a connection between the transition and the equilibrium carrier density in the insulating phase. Our devices also provide a nanomechanical method of determining the transition temperature, enable measurements on individual metal-insulator interphase walls, and allow general investigations of a phase transition in quasi-one-dimensional geometry. △ Less

Submitted 3 April, 2009; originally announced April 2009.

Comments: 9 pages, 3 figures, original submitted in June 2008

Journal ref: Nature Nanotechnology 4 420 (2009)