Showing 1–50 of 105 results for author: Claessen, R

2024 roadmap on 2D topological insulators

Authors: Bent Weber, Michael S Fuhrer, Xian-Lei Sheng, Shengyuan A Yang, Ronny Thomale, Saquib Shamim, Laurens W Molenkamp, David Cobden, Dmytro Pesin, Harold J W Zandvliet, Pantelis Bampoulis, Ralph Claessen, Fabian R Menges, Johannes Gooth, Claudia Felser, Chandra Shekhar, Anton Tadich, Mengting Zhao, Mark T Edmonds, Junxiang Jia, Maciej Bieniek, Jukka I Väyrynen, Dimitrie Culcer, Bhaskaran Muralidharan, Muhammad Nadeem

Abstract: 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc… ▽ More 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Hybrid Photoelectron Momentum Microscope at the Soft X-ray Beamline I09 of the Diamond Light Source

Authors: Matthias Schmitt, Deepnarayan Biswas, Olena Tkach, Olena Fedchenko, Jieyi Liu, Hans-Joachim Elmers, Michael Sing, Ralph Claessen, Tien-Lin Lee, Gerd Schönhense

Abstract: Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the D… ▽ More Soft X-ray momentum microscopy of crystalline solids is a highly efficient approach to map the photoelectron distribution in four-dimensional (E,k) parameter space over the entire Brillouin zone. The fixed sample geometry eliminates any modulation of the matrix element otherwise caused by changing the angle of incidence. We present a new endstation at the soft X-ray branch of beamline I09 at the Diamond Light Source, UK. The key component is a large single hemispherical spectrometer combined with a time-of-flight analyzer behind the exit slit. The photon energy ranges from hv = 105 eV to 2 keV, with circular polarization available for hv > 150 eV, allowing for circular dichroism measurements in angle-resolved photoemission (CD-ARPES). A focused and monochromatized He lamp is used for offline measurements. Under k-imaging conditions, energy and momentum resolution are 10.2 meV (FWHM) and 0.010 angstroms^-1 (base resolution 4.2 meV with smallest slits and a pass energy of 8 eV). The large angular filling of the entrance lens and hemisphere (225 mm path radius) allows k-field-of-view diameters > 6 angstroms^-1. Energy filtered X-PEEM mode using synchrotron radiation revealed a resolution of 300 nm. As examples we show 2D band map** of bilayer graphene, 3D map** of the Fermi surface of Cu, CD-ARPES for intercalated indenene layers and the sp valence bands of Cu and Au, and full-field photoelectron diffraction patterns of Ge. △ Less

Submitted 2 June, 2024; originally announced June 2024.

Comments: 20 pages, 9 figures

Epitaxial RuO$_2$ and IrO$_2$ films by pulsed laser deposition on TiO$_2$(110)

Authors: Philipp Keßler, Tim Waldsauer, Vedran Jovic, Martin Kamp, Matthias Schmitt, Michael Sing, Ralph Claessen, Simon Moser

Abstract: We present a systematic growth study of epitaxial RuO$_2$(110) and IrO$_2$(110) on TiO$_2$(110) substrates by pulsed laser deposition. We describe the main challenges encountered in the growth process, such as a deteriorating material flux due to laser induced target metallization or the delicate balance of under- vs over-oxidation of the 'stubborn' Ru and Ir metals. We identify growth temperature… ▽ More We present a systematic growth study of epitaxial RuO$_2$(110) and IrO$_2$(110) on TiO$_2$(110) substrates by pulsed laser deposition. We describe the main challenges encountered in the growth process, such as a deteriorating material flux due to laser induced target metallization or the delicate balance of under- vs over-oxidation of the 'stubborn' Ru and Ir metals. We identify growth temperatures and oxygen partial pressures of 700 K, $1\times 10^{-3}$ mbar for RuO$_2$ and 770 K, $5\times 10^{-4}$ mbar for IrO$_2$ to optimally balance between metal oxidation and particle mobility during nucleation. In contrast to IrO$_2$, RuO$_2$ exhibits layer-by-layer growth up to 5 unit cells if grown at high deposition rates. At low deposition rates, the large lattice mismatch between film and substrate fosters initial 3D island growth and cluster formation. In analogy to reports for RuO$_2$ based on physical vapor deposition, we find these islands to eventually merge and growth to continue in a step flow mode, resulting in highly crystalline, flat, stoichiometric films of RuO$_2$(110) (up to 30 nm thickness) and IrO$_2$(110) (up to 13 nm thickness) with well defined line defects. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Comments: 15 pages, 12 figures

Remote sensing of a levitated superconductor with a flux-tunable microwave cavity

Authors: Philip Schmidt, Remi Claessen, Gerard Higgins, Joachim Hofer, Jannek J. Hansen, Peter Asenbaum, Kevin Uhl, Reinhold Kleiner, Rudolf Gross, Hans Huebl, Michael Trupke, Markus Aspelmeyer

Abstract: We present a cavity-electromechanical system comprising a superconducting quantum interference device which is embedded in a microwave resonator and coupled via a pick-up loop to a 6 $μ$g magnetically-levitated superconducting sphere. The motion of the sphere in the magnetic trap induces a frequency shift in the SQUID-cavity system. We use microwave spectroscopy to characterize the system, and we… ▽ More We present a cavity-electromechanical system comprising a superconducting quantum interference device which is embedded in a microwave resonator and coupled via a pick-up loop to a 6 $μ$g magnetically-levitated superconducting sphere. The motion of the sphere in the magnetic trap induces a frequency shift in the SQUID-cavity system. We use microwave spectroscopy to characterize the system, and we demonstrate that the electromechanical interaction is tunable. The measured displacement sensitivity of $10^{-7} \, \mathrm{m} / \sqrt{\mathrm{Hz}}$, defines a path towards ground-state cooling of levitated particles with Planck-scale masses at millikelvin environment temperatures. △ Less

Submitted 12 February, 2024; v1 submitted 16 January, 2024; originally announced January 2024.

Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$

Authors: Fatima Alarab, Karol Hricovini, Berengar Leikert, Christine Richter, Thorsten Schmitt, Michael Sing, Ralph Claessen, Ján Minár, Vladimir N. Strocov

Abstract: Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni do** shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-do**) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (… ▽ More Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni do** shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-do**) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (MES). Thereby, the in-plane dxy-derived bands reduce the embedded electron density, as evidenced by progressive reduction of their Fermi momentum with the Ni concentration, and the out-of-plane dxz/yz-derived bands depopulate, making the MES purely two-dimensional. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum, and decipher the full spectrum of the VO-induced in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES and in-gap states in Ni-doped SrTiO$_3$ may help development of this material towards its device applications associated with the reduced optical band gap. △ Less

Submitted 19 October, 2023; originally announced October 2023.

Saturation of the anomalous Hall effect at high magnetic fields in altermagnetic RuO2

Authors: Teresa Tschirner, Philipp Keßler, Ruben Dario Gonzalez Betancourt, Tommy Kotte, Dominik Kriegner, Bernd Buechner, Joseph Dufouleur, Martin Kamp, Vedran Jovic, Libor Smejkal, Jairo Sinova, Ralph Claessen, Tomas Jungwirth, Simon Moser, Helena Reichlova, Louis Veyrat

Abstract: Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in Ru… ▽ More Observations of the anomalous Hall effect in RuO$_2$ and MnTe have demonstrated unconventional time-reversal symmetry breaking in the electronic structure of a recently identified new class of compensated collinear magnets, dubbed altermagnets. While in MnTe the unconventional anomalous Hall signal accompanied by a vanishing magnetization is observable at remanence, the anomalous Hall effect in RuO$_2$ is excluded by symmetry for the Néel vector pointing along the zero-field [001] easy-axis. Guided by a symmetry analysis and ab initio calculations, a field-induced reorientation of the Néel vector from the easy-axis towards the [110] hard-axis was used to demonstrate the anomalous Hall signal in this altermagnet. We confirm the existence of an anomalous Hall effect in our RuO$_2$ thin-film samples whose set of magnetic and magneto-transport characteristics is consistent with the earlier report. By performing our measurements at extreme magnetic fields up to 68 T, we reach saturation of the anomalous Hall signal at a field $H_{\rm c} \simeq$ 55 T that was inaccessible in earlier studies, but is consistent with the expected Néel-vector reorientation field. △ Less

Submitted 1 September, 2023; originally announced September 2023.

Comments: 4 figures

Journal ref: APL Mater. 11, 101103 (2023)

Stabilizing an atomically thin quantum spin Hall insulator at ambient conditions: Graphene-intercalation of indenene

Authors: Cedric Schmitt, Jonas Erhardt, Philipp Eck, Matthias Schmitt, Kyungchan Lee, Tim Wagner, Philipp Keßler, Martin Kamp, Timur Kim, Cephise Cacho, Tien-Lin Lee, Giorgio Sangiovanni, Simon Moser, Ralph Claessen

Abstract: Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), e… ▽ More Atomic monolayers on semiconductor surfaces represent a new class of functional quantum materials at the ultimate two-dimensional limit, ranging from superconductors [1, 2] to Mott insulators [3, 4] and ferroelectrics [5] to quantum spin Hall insulators (QSHI) [6, 7]. A case in point is the recently discovered QSHI indenene [7, 8], a triangular monolayer of indium epitaxially grown on SiC(0001), exhibiting a $\sim$120meV gap and substrate-matched monodomain growth on the technologically relevant $μ$m scale [9]. Its suitability for room-temperature spintronics is countered, however, by the instability of pristine indenene in air, which destroys the system along with its topological character, nullifying hopes of ex-situ processing and device fabrication. Here we show how indenene intercalation into epitaxial graphene offers effective protection from the oxidizing environment, while it leaves the topological character fully intact. This opens an unprecedented realm of ex-situ experimental opportunities, bringing this monolayer QSHI within realistic reach of actual device fabrication and edge channel transport. △ Less

Submitted 12 May, 2023; originally announced May 2023.

Journal ref: Achieving environmental stability in an atomically thin quantum spin Hall insulator via graphene intercalation. Nat Commun 15, 1486 (2024)

Moiré pattern formation in epitaxial growth on a covalent substrate: Sb on InSb(111)A

Authors: Bing Liu, Tim Wagner, Stefan Enzner, Philipp Eck, Martin Kamp, Giorgio Sangiovanni, Ralph Claessen

Abstract: Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moiré heterostructures are based on van der Waals (vdW) materials, as strong interface interactions typically lead to the formation of strained films or regular surface reconstructions. Here we successfully synthesize ultrathin Sb… ▽ More Structural moiré superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moiré heterostructures are based on van der Waals (vdW) materials, as strong interface interactions typically lead to the formation of strained films or regular surface reconstructions. Here we successfully synthesize ultrathin Sb films, that are predicted to show thickness-dependent topological properties, on semi-insulating InSb(111)A. Despite the covalent nature of the substrate surface, we prove by scanning transmission electron microscopy (STEM) that already the first layer of Sb atoms grows completely unstrained, while azimuthally aligned. Rather than compensating the lattice mismatch of -6.4% by structural modifications, the Sb films form a pronounced moiré pattern as we evidence by scanning tunneling microscopy (STM) topography up to film thicknesses of several bilayers. Our model calculations based on density functional theory (DFT) assign the moiré pattern to a periodic surface corrugation. In agreement with DFT predictions, irrespective of the moiré modulation, the topological surface state known on thick Sb film is experimentally confirmed to persist down to low film thicknesses, and the Dirac point shifts towards lower binding energies with decreasing Sb thickness. △ Less

Submitted 12 December, 2022; originally announced December 2022.

Comments: 34 pages in total, 4 figures, 1 table and 1 TOC in the main text

Linear colossal magnetoresistance driven by magnetic textures in LaTiO3 thin films on SrTiO3

Authors: Teresa Tschirner, Berengar Leikert, Felix Kern, Daniel Wolf, Axel Lubk, Martin Kamp, Kirill Miller, Fabian Hartmann, Sven Höfling, Bernd Büchner, Joseph Dufouleur, Marc Gabay, Michael Sing, Ralph Claessen, Louis Veyrat

Abstract: Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, a… ▽ More Linear magnetoresistance (LMR) is of particular interest for memory, electronics, and sensing applications, especially when it does not saturate over a wide range of magnetic fields. One of its principal origins is local mobility or density inhomogeneities, often structural, which in the Parish-Littlewood theory leads to an unsaturating LMR proportional to mobility. Structural disorder, however, also tends to limit the mobility and hence the overall LMR amplitude. An alternative route to achieve large LMR is via non-structural inhomogeneities which do not affect the zero field mobility, like magnetic domains. Here, linear positive magnetoresistance caused by magnetic texture is reported in \ch{LaTiO3}/\ch{SrTiO3} heterostructures. The LMR amplitude reaches up to 6500\% at 9T. This colossal value is understood by the unusual combination of a very high thin film mobility, up to 40 000 cm$^2$/V.s, and a very large coverage of low-mobility regions. These regions correlate with a striped magnetic structure, compatible with a spiral magnetic texture in the \ch{LaTiO3} film, revealed by low temperature Lorentz transmission electron microscopy. These results provide a novel route for the engineering of large-LMR devices. △ Less

Submitted 14 October, 2022; originally announced October 2022.

Journal ref: Phys. Rev. B 108, 245405 (2023)

Real-space Obstruction in Quantum Spin Hall Insulators

Authors: Philipp Eck, Carmine Ortix, Armando Consiglio, Jonas Erhardt, Maximilian Bauernfeind, Simon Moser, Ralph Claessen, Domenico Di Sante, Giorgio Sangiovanni

Abstract: The recently introduced classification of two-dimensional insulators in terms of topological crystalline invariants has been applied so far to "obstructed" atomic insulators characterized by a mismatch between the centers of the electronic Wannier functions and the ionic positions. We extend this notion to quantum spin Hall insulators in which the ground state cannot be described in terms of time-… ▽ More The recently introduced classification of two-dimensional insulators in terms of topological crystalline invariants has been applied so far to "obstructed" atomic insulators characterized by a mismatch between the centers of the electronic Wannier functions and the ionic positions. We extend this notion to quantum spin Hall insulators in which the ground state cannot be described in terms of time-reversal symmetric localized Wannier functions. A system equivalent to graphene in all its relevant electronic and topological properties except for a real-space obstruction is identified and studied via symmetry analysis as well as with density functional theory. The low-energy model comprises a local spin-orbit coupling and a non-local symmetry breaking potential, which turn out to be the essential ingredients for an obstructed quantum spin Hall insulator. An experimental fingerprint of the obstruction is then measured in a large-gap triangular quantum spin Hall material. △ Less

Submitted 26 September, 2022; originally announced September 2022.

Comments: 9 pages, 6 figures and 1 table. Supplementary material: 5 pages, 4 figures and 2 tables

Observation of room temperature excitons in an atomically thin topological insulator

Authors: Marcin Syperek, Raul Stühler, Armando Consiglio, Paweł Holewa, Paweł Wyborski, Łukasz Dusanowski, Felix Reis, Sven Höfling, Ronny Thomale, Werner Hanke, Ralph Claessen, Domenico Di Sante, Christian Schneider

Abstract: Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by repo… ▽ More Optical spectroscopy of ultimately thin materials has significantly enhanced our understanding of collective excitations in low-dimensional semiconductors. This is particularly reflected by the rich physics of excitons in atomically thin crystals which uniquely arises from the interplay of strong Coulomb correlation, spin-orbit coupling (SOC), and lattice geometry. Here we extend the field by reporting the observation of room temperature excitons in a material of non-trivial global topology. We study the fundamental optical excitation spectrum of a single layer of bismuth atoms epitaxially grown on a SiC substrate (hereafter bismuthene or Bi/SiC) which has been established as a large-gap, two-dimensional (2D) quantum spin Hall (QSH) insulator. Strongly developed optical resonances are observed to emerge around the direct gap at the K and K' points of the Brillouin zone, indicating the formation of bound excitons with considerable oscillator strength. These experimental findings are corroborated, concerning both the character of the excitonic resonances as well as their energy scale, by ab-initio \emph{GW} and Bethe-Salpeter equation calculations, confirming strong Coulomb interaction effects in these optical excitations. Our observations provide the first evidence of excitons in a 2D QSH insulator at room temperature, with excitonic and topological physics deriving from the very same electronic structure. △ Less

Submitted 27 March, 2023; v1 submitted 13 September, 2022; originally announced September 2022.

Large-gap quantum anomalous Hall states induced by functionalizing buckled Bi-III monolayer/Al$_{2}$O$_{3}$

Authors: Suhua **, Yunyouyou Xia, Wujun Shi, Jiayu Hu, Ralph Claessen, Werner Hanke, Ronny Thomale, Gang Li

Abstract: Chiral edge modes inherent to the topological quantum anomalous Hall (QAH) effect are a pivotal topic of contemporary condensed matter research aiming at future quantum technology and application in spintronics. A large topological gap is vital to protecting against thermal fluctuations and thus enabling a higher operating temperature. From first-principle calculations, we propose Al$_{2}$O$_{3}$… ▽ More Chiral edge modes inherent to the topological quantum anomalous Hall (QAH) effect are a pivotal topic of contemporary condensed matter research aiming at future quantum technology and application in spintronics. A large topological gap is vital to protecting against thermal fluctuations and thus enabling a higher operating temperature. From first-principle calculations, we propose Al$_{2}$O$_{3}$ as an ideal substrate for atomic monolayers consisting of Bi and group-III elements, in which a large-gap quantum spin Hall effect can be realized. Additional half-passivation with nitrogen then suggests a topological phase transition to a large-gap QAH insulator. By effective tight-binding modelling, we demonstrate that Bi-III monolayer/Al$_{2}$O$_{3}$ is dominated by $p_{x}, p_{y}$ orbitals, with subdominant $p_z$ orbital contributions. The topological phase transition into the QAH is induced by Zeeman splitting, where the off-diagonal spin exchange does not play a significant role. The effective model analysis promises utility far beyond Bi-III monolayer/Al$_{2}$O$_{3}$, as it should generically apply to systems dominated by $p_{x}, p_{y}$ orbitals with a band inversion at $Γ$. △ Less

Submitted 2 August, 2022; originally announced August 2022.

Comments: 9 pages with 4 figures

Two-dimensional ferromagnetic extension of a topological insulator

Authors: P. Kagerer, C. I. Fornari, S. Buchberger, T. Tschirner, L. Veyrat, M. Kamp, A. V. Tcakaev, V. Zabolotnyy, S. L. Morelhão, B. Geldiyev, S. Müller, A. Fedorov, E. Rienks, P. Gargiani, M. Valvidares, L. C. Folkers, A. Isaeva, B. Büchner, V. Hinkov, R. Claessen, H. Bentmann, F. Reinert

Abstract: Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficien… ▽ More Inducing a magnetic gap at the Dirac point of the topological surface state (TSS) in a 3D topological insulator (TI) is a route to dissipationless charge and spin currents. Ideally, magnetic order is present only at the surface and not in the bulk, e.g. through proximity of a ferromagnetic (FM) layer. However, such a proximity-induced Dirac mass gap has not been observed, likely due to insufficient overlap of TSS and the FM subsystem. Here, we take a different approach, namely FM extension, using a thin film of the 3D TI Bi$_2$Te$_3$, interfaced with a monolayer of the lattice-matched van der Waals ferromagnet MnBi$_2$Te$_4$. Robust 2D ferromagnetism with out-of-plane anisotropy and a critical temperature of $\text{T}_\text{c}\approx$~15 K is demonstrated by X-ray magnetic dichroism and electrical transport measurements. Using angle-resolved photoelectron spectroscopy, we observe the opening of a sizable magnetic gap in the 2D FM phase, while the surface remains gapless in the paramagnetic phase above T$_c$. This sizable gap indicates a relocation of the TSS to the FM ordered Mn moments near the surface, which leads to a large mutual overlap. △ Less

Submitted 28 July, 2022; originally announced July 2022.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Research 5 (2023), L022019

Temperature dependent ARPES of the metallic-like bands in Si(553)-Au

Authors: Lenart Dudy, Julian Aulbach, Jörg Schäfer, Ralph Claessen, Victor Rogalev, Piotr Chudzinski

Abstract: We conducted a thorough investigation into the temperature dependence of the metallic-like bands of Si(553)-Au using angular-resolved photoemission spectroscopy (ARPES). Our study addresses the challenges posed by the short-term stability of the surface and photo-voltage effects, which we overcame to extract changes in the band-filling and Fermi-velocity. Our findings shed light on the low-tempera… ▽ More We conducted a thorough investigation into the temperature dependence of the metallic-like bands of Si(553)-Au using angular-resolved photoemission spectroscopy (ARPES). Our study addresses the challenges posed by the short-term stability of the surface and photo-voltage effects, which we overcame to extract changes in the band-filling and Fermi-velocity. Our findings shed light on the low-temperature phase of the step edge in Si(553)-Au, which has been a topic of ongoing debate regarding its structural or electronic nature. Through comparison with theoretical predictions of a structural-related low-temperature to high-temperature phase transition, we discovered that the band-filling and Fermi-velocity do not change accordingly, thereby ruling out this scenario. Our study contributes to a better understanding of this material system and provides an important reference for future research. △ Less

Submitted 14 June, 2023; v1 submitted 25 March, 2022; originally announced March 2022.

Toward Functionalized Ultrathin Oxide Films: the Impact of Surface Apical Oxygen

Authors: Judith Gabel, Matthias Pickem, Philipp Scheiderer, Lenart Dudy, Berengar Leikert, Marius Fuchs, Martin Stübinger, Matthias Schmitt, Julia Küspert, Giorgio Sangiovanni, Jan M. Tomczak, Karsten Held, Tien-Lin Lee, Ralph Claessen, Michael Sing

Abstract: Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that th… ▽ More Thin films of transition metal oxides open up a gateway to nanoscale electronic devices beyond silicon characterized by novel electronic functionalities. While such films are commonly prepared in an oxygen atmosphere, they are typically considered to be ideally terminated with the stoichiometric composition. Using the prototypical correlated metal SrVO$_3$ as an example, it is demonstrated that this idealized description overlooks an essential ingredient: oxygen adsorbing at the surface apical sites. The oxygen adatoms, which persist even in an ultrahigh vacuum environment, are shown to severely affect the intrinsic electronic structure of a transition metal oxide film. Their presence leads to the formation of an electronically dead surface layer but also alters the band filling and the electron correlations in the thin films. These findings highlight that it is important to take into account surface apical oxygen or -- mutatis mutandis -- the specific oxygen configuration imposed by a cap** layer to predict the behavior of ultrathin films of transition metal oxides near the single unit-cell limit. △ Less

Submitted 22 February, 2022; originally announced February 2022.

Journal ref: Adv. Electron. Mater. 2021, 2101006

High-temperature quantum spin Hall states in buckled III-V-monolayer/SiO$_{2}

Authors: Yunyouyou Xia, Suhua **, Werner Hanke, Ralph Claessen, Gang Li

Abstract: After establishing the fundamental understanding and the high throughput topological characterization of nearly all inorganic three-dimensional materials, the general interest and the demand of functional applications drive the research of topological insulators to the exploration of systems with a more robust topological nature and fewer fabrication challenges. The successful demonstration of the… ▽ More After establishing the fundamental understanding and the high throughput topological characterization of nearly all inorganic three-dimensional materials, the general interest and the demand of functional applications drive the research of topological insulators to the exploration of systems with a more robust topological nature and fewer fabrication challenges. The successful demonstration of the room-temperature quantum spin Hall (QSH) states in bismuthene/SiC(0001), thus, triggers the search of two-dimensional topological systems that are experimentally easy to access and of even larger topological gaps. In this work, we propose a family of III-V honeycomb monolayers on SiO$_{2}$ to be the next generation of large gap QSH systems, based on which a spintronic device may potentially operate at room temperature due to its enlarged topological gap ($\sim$ 900 meV) as compared to bismuthene/SiC(0001). Fundamentally, this also realizes a band-inversion type QSH insulator that is distinct to the Kane-Mele type bismuthene/SiC(0001). △ Less

Submitted 26 December, 2021; originally announced December 2021.

Comments: 6 pages, 3 figures. Report on missing references is welcome

Lifting topological protection in a quantum spin Hall insulator by edge coupling

Authors: Raul Stühler, André Kowalewski, Felix Reis, Dimitri Jungblut, Fernando Dominguez, Benedikt Scharf, Gang Li, Jörg Schäfer, Ewelina M. Hankiewicz, Ralph Claessen

Abstract: The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics are based on the topological protection and spin-momentum locking of their helical edge states. In this study we present experimental evidence that topological p… ▽ More The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics are based on the topological protection and spin-momentum locking of their helical edge states. In this study we present experimental evidence that topological protection can be (partially) lifted by pairwise coupling of 2D TI edges in close proximity. Using direct wave function map** via scanning tunneling microscopy/spectroscopy (STM/STS) we compare isolated and coupled topological edges in the 2D TI bismuthene. The latter situation is realized by natural lattice line defects and reveals distinct quasi-particle interference (QPI) patterns, identified as electronic Fabry-Pérot resonator modes. In contrast, free edges show no sign of any single-particle backscattering. These results pave the way for novel device concepts based on active control of topological protection through inter-edge hybridization for, e.g., electronic Fabry-Pérot interferometry. △ Less

Submitted 8 November, 2021; originally announced November 2021.

Hard x-ray angle-resolved photoemission from a buried high-mobility electron system

Authors: Michael Zapf, Matthias Schmitt, Judith Gabel, Philipp Scheiderer, Martin Stübinger, Berengar Leikert, Giorgio Sangiovanni, Lenart Dudy, Sergii Chernov, Sergey Babenkov, Dmitry Vasilyev, Olena Fedchenko, Katerina Medjanik, Yury Matveyev, Andrei Gloskowski, Christoph Schlueter, Tien-Lin Lee, Hans-Joachim Elmers, Gerd Schönhense, Michael Sing, Ralph Claessen

Abstract: Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by… ▽ More Novel two-dimensional electron systems at the interfaces and surfaces of transition-metal oxides recently have attracted much attention as they display tunable, intriguing properties that can be exploited in future electronic devices. Here we show that a high-mobility quasi-two-dimensional electron system with strong spin-orbit coupling can be induced at the surface of a KTaO$_3$ (001) crystal by pulsed laser deposition of a disordered LaAlO$_3$ film. The momentum-resolved electronic structure of the buried electron system is mapped out by hard x-ray angle-resolved photoelectron spectroscopy. From a comparison to calculations it is found that the band structure deviates from that of electron-doped bulk KTaO$_3$ due to the confinement to the interface. Nevertheless, the Fermi surface appears to be clearly three-dimensional. From the $k$ broadening of the Fermi surface and core-level depth profiling we estimate the extension of the electron system to be at least 1 nm but not much larger than 2 nm, respectively. △ Less

Submitted 20 September, 2022; v1 submitted 28 October, 2021; originally announced October 2021.

Comments: 13 pages, 7 figures

Ultrafast Momentum-resolved Hot Electron Dynamics in the Two-dimensional Topological Insulator Bismuthene

Authors: J. Maklar, R. Stühler, M. Dendzik, T. Pincelli, S. Dong, S. Beaulieu, A. Neef, G. Li, M. Wolf, R. Ernstorfer, R. Claessen, L. Rettig

Abstract: Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on topologically-protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted characterization of their dynamical pr… ▽ More Two-dimensional quantum spin Hall (QSH) insulators are a promising material class for spintronic applications based on topologically-protected spin currents in their edges. Yet, they have not lived up to their technological potential, as experimental realizations are scarce and limited to cryogenic temperatures. These constraints have also severely restricted characterization of their dynamical properties. Here, we report on the electron dynamics of the novel room-temperature QSH candidate bismuthene after photoexcitation using time- and angle-resolved photoemission spectroscopy. We map the transiently occupied conduction band and track the full relaxation pathway of hot photocarriers. Intriguingly, we observe photocarrier lifetimes much shorter than in \red{conventional} semiconductors. This is ascribed to the presence of topological in-gap states already established by local probes. Indeed, we find spectral signatures consistent with these earlier findings. Demonstration of the large band gap and the view into photoelectron dynamics mark a critical step toward optical control of QSH functionalities. △ Less

Submitted 11 June, 2022; v1 submitted 20 August, 2021; originally announced August 2021.

Comments: 13 pages, 11 figures

Journal ref: Nano Lett. 2022, 22, 13, 5420-5426

Design and realization of topological Dirac fermions on a triangular lattice

Authors: Maximilian Bauernfeind, Jonas Erhardt, Philipp Eck, Pardeep K. Thakur, Judith Gabel, Tien-Lin Lee, Jörg Schäfer, Simon Moser, Domenico Di Sante, Ralph Claessen, Giorgio Sangiovanni

Abstract: Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele's original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with… ▽ More Large-gap quantum spin Hall insulators are promising materials for room-temperature applications based on Dirac fermions. Key to engineer the topologically non-trivial band ordering and sizable band gaps is strong spin-orbit interaction. Following Kane and Mele's original suggestion, one approach is to synthesize monolayers of heavy atoms with honeycomb coordination accommodated on templates with hexagonal symmetry. Yet, in the majority of cases, this recipe leads to triangular lattices, typically hosting metals or trivial insulators. Here, we conceive and realize "indenene", a triangular monolayer of indium on SiC exhibiting non-trivial valley physics driven by local spin-orbit coupling, which prevails over inversion-symmetry breaking terms. By means of tunneling microscopy of the 2D bulk we identify the quantum spin Hall phase of this triangular lattice and unveil how a hidden honeycomb connectivity emerges from interference patterns in Bloch $p_x \pm ip_y$-derived wave functions. △ Less

Submitted 30 June, 2021; originally announced June 2021.

Journal ref: Nat. Commun., 12, 5396 (2021)

Hard X-ray photoemission spectroscopy of LaVO$_3$/SrTiO$_3$: Band alignment and electronic reconstruction

Authors: M. Stübinger, J. Gabel, P. Scheiderer, M. Zapf, M. Schmitt, P. Schütz, B. Leikert, J. Küspert, M. Kamp, P. K. Thakur, T. -L. Lee, P. Potapov, A. Lubk, B. Büchner, M. Sing, R. Claessen

Abstract: The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer rema… ▽ More The heterostructure consisting of the Mott insulator LaVO$_3$ and the band insulator SrTiO$_3$ is considered a promising candidate for future photovoltaic applications. Not only does the (direct) excitation gap of LaVO$_3$ match well the solar spectrum, but its correlated nature and predicted built-in potential, owing to the non-polar/polar interface when integrated with SrTiO$_3$, also offer remarkable advantages over conventional solar cells. However, experimental data beyond the observation of a thickness-dependent metal-insulator transition is scarce and a profound, microscopic understanding of the electronic properties is still lacking. By means of soft and hard X-ray photoemission spectroscopy as well as resistivity and Hall effect measurements we study the electrical properties, band bending, and band alignment of LaVO$_3$/SrTiO$_3$ heterostructures. We find a critical LaVO$_3$ thickness of five unit cells, confinement of the conducting electrons to exclusively Ti 3$d$ states at the interface, and a potential gradient in the film. From these findings we conclude on electronic reconstruction as the driving mechanism for the formation of the metallic interface in LaVO$_3$/SrTiO$_3$. △ Less

Submitted 26 May, 2021; originally announced May 2021.

Comments: 13 pages, 12 figures

Controlling the electronic interface properties of AlO$_x$/SrTiO$_3$ heterostructures

Authors: Berengar Leikert, Judith Gabel, Matthias Schmitt, Martin Stübinger, Philipp Scheiderer, Louis Veyrat, Tien-Lin Lee, Michael Sing, Ralph Claessen

Abstract: Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ cap** layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We… ▽ More Depositing disordered Al on top of SrTiO$_3$ is a cheap and easy way to create a two-dimensional electron system in the SrTiO$_3$ surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO$_3$ cap** layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth. △ Less

Submitted 13 April, 2021; originally announced April 2021.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. Materials 5, 065003 (2021)

Photoemission study on pristine and Ni-doped SrTiO$_{3}$ thin films

Authors: F. Alarab, K. Hricovini, B. Leikert, L. Nicolai, M. Fanciulli, O. Heckmann, M. Richter, L. Prušakova, Z. Jansa, P. Šutta, J. Rault, P. Lefevre, M. Muntwiller, R. Claessen, J. Minár

Abstract: We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high… ▽ More We combined photoelemission spectroscopy with first-principle calculations to investigate structural and electronic properties of SrTiO$_{3}$ doped with Ni impurities. In SrTiO$_{3}$ polycrystalline thin films, grown by magnetron sputtering, the mean size of the crystallites increases with the concentration of Ni. To determine the electronic band structure of SrTiO$_{3}$ films doped with Ni, high quality ordered pristine and SrTiO3:Ni$_{x}$ films with x=0.06 and 0.12 were prepared by pulsed laser deposition. Electronic band structure calculations for the ground state, as well as one-step model photoemission calculations, which were obtained by means of the Korringa-Khon-Rostoker Greens's function method, predicted the formation of localised $3d$-impurity bands in the band gap of SrTiO$_{3}$ close to the valence band maxima. The measured valence bands at the resonance Ni2p excitation and band dispersion confirm these findings. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Comments: 12 pages and 7 figures

Twist Angle Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures

Authors: Junho Choi, Matthias Florian, Alexander Steinhoff, Daniel Erben, Kha Tran, Dong Seob Kim, Liuyang Sun, Jiamin Quan, Robert Claassen, Somak Majumder, Jennifer A. Hollingsworth, Takashi Taniguchi, Kenji Watanabe, Keiji Ueno, Akshay Singh, Galan Moody, Frank Jahnke, Xiaoqin Li

Abstract: In van der Waals (vdW) heterostructures formed by stacking two monolayers of transition metal dichalcogenides, multiple exciton resonances with highly tunable properties are formed and subject to both vertical and lateral confinement. We investigate how a unique control knob, the twist angle between the two monolayers, can be used to control the exciton dynamics. We observe that the interlayer exc… ▽ More In van der Waals (vdW) heterostructures formed by stacking two monolayers of transition metal dichalcogenides, multiple exciton resonances with highly tunable properties are formed and subject to both vertical and lateral confinement. We investigate how a unique control knob, the twist angle between the two monolayers, can be used to control the exciton dynamics. We observe that the interlayer exciton lifetimes in $\text{MoSe}_{\text{2}}$/$\text{WSe}_{\text{2}}$ twisted bilayers (TBLs) change by one order of magnitude when the twist angle is varied from 1$^\circ$ to 3.5$^\circ$. Using a low-energy continuum model, we theoretically separate two leading mechanisms that influence interlayer exciton radiative lifetimes. The shift to indirect transitions in the momentum space with an increasing twist angle and the energy modulation from the moiré potential both have a significant impact on interlayer exciton lifetimes. We further predict distinct temperature dependence of interlayer exciton lifetimes in TBLs with different twist angles, which is partially validated by experiments. While many recent studies have highlighted how the twist angle in a vdW TBL can be used to engineer the ground states and quantum phases due to many-body interaction, our studies explore its role in controlling the dynamics of optically excited states, thus, expanding the conceptual applications of "twistronics". △ Less

Submitted 26 January, 2021; v1 submitted 29 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. Lett. 126, 047401 (2021)

Tailoring the topological surface state in ultrathin $α$-Sn (111) films

Authors: Victor A. Rogalev, Felix Reis, Florian Adler, Maximilian Bauernfeind, Jonas Erhardt, André Kowalewski, Markus R. Scholz, Lenart Dudy, Liam B. Duffy, Thorsten Hesjedal, Moritz Hoesch, Gustav Bihlmayer, Jörg Schäfer, Ralph Claessen

Abstract: We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV be… ▽ More We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick $α$-Sn films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of $α$-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states. △ Less

Submitted 6 December, 2019; v1 submitted 24 October, 2019; originally announced October 2019.

Comments: 7 pages, 5 figures, 1 table

Journal ref: Phys. Rev. B 100, 245144 (2019)

Effects of finite-range interactions on the one-electron spectral properties of TTF-TCNQ

Authors: Jose M. P. Carmelo, Tilen Cadez, David K. Campbell, Michael Sing, Ralph Claessen

Abstract: The electronic dispersions of the quasi-one-dimensional organic conductor TTF-TCNQ are studied by angle-resolved photoelectron spectroscopy (ARPES) with higher angular resolution and accordingly smaller step width than in previous studies. Our experimental results suggest that a refinement of the single-band 1D Hubbard model that includes finite-range interactions is needed to explain these photoe… ▽ More The electronic dispersions of the quasi-one-dimensional organic conductor TTF-TCNQ are studied by angle-resolved photoelectron spectroscopy (ARPES) with higher angular resolution and accordingly smaller step width than in previous studies. Our experimental results suggest that a refinement of the single-band 1D Hubbard model that includes finite-range interactions is needed to explain these photoemission data. To account for the effects of these finite-range interactions we employ a mobile quantum impurity scheme that describes the scattering of fractionalized particles at energies above the standard Tomonaga-Luttinger liquid limit. Our theoretical predictions agree quantitatively with the location in the $(k,ω)$ plane of the experimentally observed ARPES structures at these higher energies. The nonperturbative microscopic mechanisms that control the spectral properties are found to simplify in terms of the exotic scattering of the charge fractionalized particles. We find that the scattering occurs in the unitary limit of (minus) infinite scattering length, which limit occurs within neutron-neutron interactions in shells of neutron stars and in the scattering of ultracold atoms but not in perturbative electronic condensed-matter systems. Our results provide important physical information on the exotic processes involved in the finite-range electron interactions that control the high-energy spectral properties of TTF-TCNQ. Our results also apply to a wider class of 1D and quasi-1D materials and systems that are of theoretical and potential technological interest. △ Less

Submitted 8 December, 2019; v1 submitted 29 July, 2019; originally announced July 2019.

Comments: 27 pages, 4 figures

Journal ref: Phys. Rev. B 100, 245202 (2019)

Non-trivial topological valence bands of common diamond and zinc-blende semiconductors

Authors: Tomáš Rauch, Victor A. Rogalev, Maximilian Bauernfeind, Julian Maklar, Felix Reis, Florian Adler, Simon Moser, Johannes Weis, Tien-Lin Lee, Pardeep K. Thakur, Jörg Schäfer, Ralph Claessen, Jürgen Henk, Ingrid Mertig

Abstract: The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the F… ▽ More The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the Fermi energy. Our parity analysis shows that the spin-orbit split-off band near the valence band maximum exhibits a strong topologically non-trivial behavior characterized by the $\mathcal{Z}_2$ invariants $(1;000)$. The non-trivial character emerges instantaneously with non-zero spin-orbit coupling, in contrast to the conventional topological phase transition mechanism. \textit{Ab initio}-based tight-binding calculations resolve topological surface states in the occupied electronic structure of InSb and GaAs, further confirmed experimentally by soft X-ray angle-resolved photoemission from both materials. Our findings are valid for all other materials whose valence bands are adiabatically linked to those of InSb, i.e., many diamond and zinc-blende semiconductors, as well as other related materials, such as half-Heusler compounds. △ Less

Submitted 10 April, 2019; originally announced April 2019.

Journal ref: Phys. Rev. Materials 3, 064203 (2019)

Tomonaga-Luttinger liquid in the edge channels of a quantum spin Hall insulator

Authors: R. Stühler, F. Reis, T. Müller, T. Helbig, T. Schwemmer, R. Thomale, J. Schäfer, R. Claessen

Abstract: Topological quantum matter is characterized by non-trivial global invariants of the bulk which induce gapless electronic states at its boundaries. A case in point are two-dimensional topological insulators (2D-TI) which host one-dimensional (1D) conducting helical edge states protected by time-reversal symmetry (TRS) against single-particle backscattering (SPB). However, as two-particle scattering… ▽ More Topological quantum matter is characterized by non-trivial global invariants of the bulk which induce gapless electronic states at its boundaries. A case in point are two-dimensional topological insulators (2D-TI) which host one-dimensional (1D) conducting helical edge states protected by time-reversal symmetry (TRS) against single-particle backscattering (SPB). However, as two-particle scattering is not forbidden by TRS [1], the existence of electronic interactions at the edge and their notoriously strong impact on 1D states may lead to an intriguing interplay between topology and electronic correlations. In particular, it is directly relevant to the question in which parameter regime the quantum spin Hall effect (QSHE) expected for 2D-TIs becomes obscured by these correlation effects that prevail at low temperatures [2]. Here we study the problem on bismuthene on SiC(0001) which has recently been synthesized and proposed to be a candidate material for a room-temperature QSHE [3]. By utilizing the accessibility of this monolayer-substrate system on atomic length scales by scanning tunneling microscopy/spectroscopy (STM/STS) we observe metallic edge channels which display 1D electronic correlation effects. Specifically, we prove the correspondence with a Tomonaga-Luttinger liquid (TLL), and, based on the observed universal scaling of the differential tunneling conductivity (dI/dV), we derive a TLL parameter K reflecting intermediate electronic interaction strength in the edge states of bismuthene. This establishes the first spectroscopic identification of 1D electronic correlation effects in the topological edge states of a 2D-TI. △ Less

Submitted 18 January, 2019; originally announced January 2019.

A new paradigm for the quantum spin Hall effect at high temperatures

Authors: Gang Li, Werner Hanke, Ewelina M. Hankiewicz, Felix Reis, Joerg Schaefer, Ralph Claessen, Congjun Wu, Ronny Thomale

Abstract: The quantum spin Hall effect (QSHE) has formed the seed for contemporary research on topological quantum states of matter. Since its discovery in HgTe/CdTe quantum wells and AlGaAs/GaAs heterostructures, all such systems have so far been suffering from extremely low operating temperatures, rendering any technological application out of reach. We formulate a theoretical paradigm to accomplish the h… ▽ More The quantum spin Hall effect (QSHE) has formed the seed for contemporary research on topological quantum states of matter. Since its discovery in HgTe/CdTe quantum wells and AlGaAs/GaAs heterostructures, all such systems have so far been suffering from extremely low operating temperatures, rendering any technological application out of reach. We formulate a theoretical paradigm to accomplish the high temperature QSHE in monolayer-substrate heterostructures. Specifically, we explicate our proposal for hexagonal compounds formed by monolayers of heavy group-V elements (As, Sb, Bi) on a SiC substrate. We show how orbital filtering due to substrate hybridization, a tailored multi-orbital density of states at low energies, and large spin-orbit coupling can conspire to yield QSH states with bulk gaps of several hundreds of meV. Combined with the successful realization of Bi/SiC (0001), with a measured bulk gap of 800 meV reported previously [Reis et al., 10.1126/science.aai8142 (2017)], our paradigm elevates the QSHE from an intricate quantum phenomenon at low temperatures to a scalable effect amenable to device design and engineering. △ Less

Submitted 25 July, 2018; originally announced July 2018.

Comments: 16 pages, 9 figures

Journal ref: Phys. Rev. B 98, 165146 (2018)

Towards Topological Quasi-Freestanding Stanene via Substrate Engineering

Authors: Domenico Di Sante, Philipp Eck, Maximilian Bauernfeind, Marius Will, Ronny Thomale, Jörg Schäfer, Ralph Claessen, Giorgio Sangiovanni

Abstract: In search for a new generation of spintronics hardware, material candidates for room temperature quantum spin Hall effect (QSHE) have become a contemporary focus of investigation. Inspired by the original proposal for QSHE in graphene, several heterostructures have been synthesized, aiming at a hexagonal monolayer of heavier group IV elements in order to promote the QSHE bulk gap via increased spi… ▽ More In search for a new generation of spintronics hardware, material candidates for room temperature quantum spin Hall effect (QSHE) have become a contemporary focus of investigation. Inspired by the original proposal for QSHE in graphene, several heterostructures have been synthesized, aiming at a hexagonal monolayer of heavier group IV elements in order to promote the QSHE bulk gap via increased spin-orbit coupling. So far, however, the monolayer/substrate coupling, which can manifest itself in strain, deformation, and hybridization, has proven to be detrimental to the aspired QSHE conditions for the monolayer. Specifically focusing on stanene, the Sn analogue of graphene, we investigate how an interposing buffer layer mediates between monolayer and substrate in order to optimize the QSHE setting. From a detailed density functional theory study, we highlight the principal mechanisms induced by such a buffer layer to accomplish quasi-free standing stanene in its QSHE phase. We complement our theoretical predictions by presenting the first real attempts to grow a buffer layer on SiC(0001) on which stanene can be deposited. △ Less

Submitted 6 November, 2018; v1 submitted 24 July, 2018; originally announced July 2018.

Comments: 11 pages, 5 figures

Journal ref: Phys. Rev. B 99, 035145 (2019)

Tailoring Materials for Mottronics: Excess Oxygen Do** of a Prototypical Mott Insulator

Authors: Philipp Scheiderer, Matthias Schmitt, Judith Gabel, Martin Stübinger, Philipp Schütz, Lenart Dudy, Christoph Schlueter, Tien-Lin Lee, Michael Sing, Ralph Claessen

Abstract: The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the met… ▽ More The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide compounds are usually very robust, new methods have to be developed to push such materials right to the boundary to the metallic phase in order to enable the metal-insulator transition to be switched by electric gating. Here we demonstrate that thin films of the prototypical Mott insulator LaTiO$_3$ grown by pulsed laser deposition under oxygen atmosphere are readily tuned by excess oxygen do** across the line of the band-filling controlled Mott transition in the electronic phase diagram. The detected insulator to metal transition is characterized by a strong change in resistivity of several orders of magnitude. The use of suitable substrates and cap** layers to inhibit oxygen diffusion facilitates full control of the oxygen content and renders the films stable against exposure to ambient conditions, making LaTiO$_{3+x}$ a promising functional material for Mottronics devices. △ Less

Submitted 16 July, 2018; originally announced July 2018.

Journal ref: Advanced Materials 30, 1706708 (2018)

Testing Topological Protection of Edge States in Hexagonal Quantum Spin Hall Candidate Materials

Authors: Fernando Dominguez, Benedikt Scharf, Gang Li, Jörg Schäfer, Ralph Claessen, Werner Hanke, Ronny Thomale, Ewelina M. Hankiewicz

Abstract: We analyze the detailed structure of topological edge mode protection occuring in hexagonal quantum spin Hall (QSH) materials. We focus on bismuthene, antimonene, and arsenene on a SiC substrate, which, due to their large bulk gap, may offer new opportunities for room-temperature QSH applications. While time reversal symmetry is responsible for the principal symmetry protected character of QSH sta… ▽ More We analyze the detailed structure of topological edge mode protection occuring in hexagonal quantum spin Hall (QSH) materials. We focus on bismuthene, antimonene, and arsenene on a SiC substrate, which, due to their large bulk gap, may offer new opportunities for room-temperature QSH applications. While time reversal symmetry is responsible for the principal symmetry protected character of QSH states, the hexagonal edge terminations yield further aspects of crystal symmetry which affect the topological protection. We show that armchair QSH edge states remain gapless under an in-plane magnetic field in the direction along the edge, a hallmark of their topological crystalline protection. In contrast, an out-of-plane magnetic field opens a gap of the order of a few meV within realistic ranges of parameters. We use these intriguing signatures of armchair QSH edge states to predict experimentally testable fingerprints of their additional topological crystalline character and their helicity emerging in tunneling spectroscopy and ballistic magnetotransport. △ Less

Submitted 23 October, 2018; v1 submitted 7 March, 2018; originally announced March 2018.

Comments: 18 pages, pages 6-18 contain supplemental material

Journal ref: Phys. Rev. B 98, 161407 (2018)

Correlation-driven charge order in a frustrated two-dimensional atom lattice

Authors: Florian Adler, Stephan Rachel, Manuel Laubach, Julian Maklar, Andrzej Fleszar, Jörg Schäfer, Ralph Claessen

Abstract: We thoroughly examine the ground state of the triangular lattice of Pb on Si(111) using scanning tunneling microscopy. We detect charge-order, accompanied by a subtle structural reconstruction. Applying the extended variational cluster approach we map out the phase diagram as a function of local and non-local Coulomb interactions. Comparing the experimental data with the theoretical modeling leads… ▽ More We thoroughly examine the ground state of the triangular lattice of Pb on Si(111) using scanning tunneling microscopy. We detect charge-order, accompanied by a subtle structural reconstruction. Applying the extended variational cluster approach we map out the phase diagram as a function of local and non-local Coulomb interactions. Comparing the experimental data with the theoretical modeling leads us to conclude that electron correlations are the driving force of the charge-ordered state in Pb/Si(111), rather than Fermi surface nesting. These results resolve the discussion about the origin of the well known $3\times 3$ reconstruction forming below $86\,$K. By exploiting the tunability of correlation strength, hop** parameters and bandfilling, this material class represents a promising platform to search for exotic states of matter, in particular, for chiral topological superconductivity. △ Less

Submitted 28 August, 2019; v1 submitted 1 February, 2018; originally announced February 2018.

Comments: 6 pages, 4 figures. Update: included small refinements from the peer review process

Journal ref: Phys. Rev. Lett. 123, 086401 (2019)

The topological surface state of $α$-Sn on InSb(001) as studied by photoemission

Authors: M. R. Scholz, V. A. Rogalev, L. Dudy, F. Reis, F. Adler, J. Aulbach, L. J. Collins-McIntyre, L. B. Duffy, H. F. Yang, Y. L. Chen, T. Hesjedal, Z. K. Liu, M. Hoesch, S. Muff, J. H. Dil, J. Schäfer, R. Claessen

Abstract: We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by… ▽ More We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We show that, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states. △ Less

Submitted 29 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. B 97, 075101 (2018)

Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopy

Authors: P. Schütz, D. V. Christensen, V. Borisov, F. Pfaff, P. Scheiderer, L. Dudy, M. Zapf, J. Gabel, Y. Z. Chen, N. Pryds, V. A. Rogalev, V. N. Strocov, C. Schlueter, T. -L. Lee, H. O. Jeschke, R. Valentí, M. Sing, R. Claessen

Abstract: The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy… ▽ More The spinel/perovskite heterointerface $γ$-Al$_2$O$_3$/SrTiO$_3$ hosts a two-dimensional electron system (2DES) with electron mobilities exceeding those in its all-perovskite counterpart LaAlO$_3$/SrTiO$_3$ by more than an order of magnitude despite the abundance of oxygen vacancies which act as electron donors as well as scattering sites. By means of resonant soft x-ray photoemission spectroscopy and \textit{ab initio} calculations we reveal the presence of a sharply localized type of oxygen vacancies at the very interface due to the local breaking of the perovskite symmetry. We explain the extraordinarily high mobilities by reduced scattering resulting from the preferential formation of interfacial oxygen vacancies and spatial separation of the resulting 2DES in deeper SrTiO$_3$ layers. Our findings comply with transport studies and pave the way towards defect engineering at interfaces of oxides with different crystal structures. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Comments: Accepted as Rapid Communications in Physical Review B

Journal ref: Physical Review B (Rapid Communications), Vol. 96, p.161409(R), 2017

Dimensionality-driven metal-insulator-transition in spin-orbit coupled SrIrO$_3$

Authors: P. Schütz, D. Di Sante, L. Dudy, J. Gabel, M. Stübinger, M. Kamp, Y. Huang, M. Capone, M. -A. Husanu, V. Strocov, G. Sangiovanni, M. Sing, R. Claessen

Abstract: Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, a… ▽ More Upon reduction of the film thickness we observe a metal-insulator transition in epitaxially stabilized, spin-orbit coupled SrIrO$_3$ ultrathin films. By comparison of the experimental electronic dispersions with density functional theory at various levels of complexity we identify the leading microscopic mechanisms, i.e., a dimensionality-induced re-adjustment of octahedral rotations, magnetism, and electronic correlations. The astonishing resemblance of the band structure in the two-dimensional limit to that of bulk Sr$_2$IrO$_4$ opens new avenues to unconventional superconductivity by "clean" electron do** through electric field gating. △ Less

Submitted 29 June, 2017; originally announced June 2017.

Comments: 6 pages, 4 figures, cf. arXiv:1706.08901 for a recent complementary study

Journal ref: Phys. Rev. Lett. 119, 256404 (2017)

Raman and fluorescence contributions to resonant inelastic soft x-ray scattering on LaAlO$_3$/SrTiO$_3$ heterostructures

Authors: F. Pfaff, H. Fujiwara, G. Berner, A. Yamasaki, H. Niwa, H. Kiuchi, A. Gloskovskii, W. Drube, O. Kirilmaz, A. Sekiyama, J. Miyawaki, Y. Harada, S. Suga, M. Sing, R. Claessen

Abstract: We present a detailed study of the Ti 3$d$ carriers at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures by high-resolution resonant inelastic soft x-ray scattering (RIXS), with special focus on the roles of overlayer thickness and oxygen vacancies. Our measurements show the existence of interfacial Ti 3$d$ electrons already below the critical thickness for conductivity and an increase of the… ▽ More We present a detailed study of the Ti 3$d$ carriers at the interface of LaAlO$_3$/SrTiO$_3$ heterostructures by high-resolution resonant inelastic soft x-ray scattering (RIXS), with special focus on the roles of overlayer thickness and oxygen vacancies. Our measurements show the existence of interfacial Ti 3$d$ electrons already below the critical thickness for conductivity and an increase of the total interface charge up to a LaAlO$_3$ overlayer thickness of 6 unit cells before it levels out. By comparing stoichiometric and oxygen deficient samples we observe strong Ti 3$d$ charge carrier do** by oxygen vacancies. The RIXS data combined with photoelectron spectroscopy and transport measurements indicate the simultaneous presence of localized and itinerant charge carriers. However, it is demonstrated that the relative amount of localized and itinerant Ti $3d$ electrons in the ground state cannot be deduced from the relative intensities of the Raman and fluorescence peaks in excitation energy dependent RIXS measurements, in contrast to previous interpretations. Rather, we attribute the observation of either the Raman or the fluorescence signal to the spatial extension of the intermediate state reached in the RIXS excitation process. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Comments: 9 pages, 6 figures

Journal ref: Phys. Rev. B 97, 035110 (2018)

Double Band Inversion in $ α$-Sn: Appearance of Topological Surface States and the Role of Orbital Composition

Authors: Victor A. Rogalev, Tomáš Rauch, Markus R. Scholz, Felix Reis, Lenart Dudy, Andrzej Fleszar, Marius-Adrian Husanu, Vladimir N. Strocov, Jürgen Henk, Ingrid Mertig, Jörg Schäfer, Ralph Claessen

Abstract: The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of t… ▽ More The electronic structure of \graySn(001) thin films strained compressively in-plane was studied both experimentally and theoretically. A new topological surface state (TSS) located entirely within the gapless projected bulk bands is revealed by \textit{ab initio}-based tight-binding calculations as well as directly accessed by soft X-ray angle-resolved photoemission. The topological character of this state, which is a surface resonance, is confirmed by unravelling the band inversion and by calculating the topological invariants. In agreement with experiment, electronic structure calculations show the maximum density of states in the subsurface region, while the already established TSS near the Fermi level is strongly localized at the surface. Such varied behavior is explained by the differences in orbital composition between the specific TSS and its associated bulk states, respectively. This provides an orbital protection mechanism for topological states against mixing with the background of bulk bands. △ Less

Submitted 16 February, 2017; v1 submitted 12 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 95, 161117 (2017)

Gate-tunable, normally-on to normally-off memristance transition in patterned LaAlO3/SrTiO3 interfaces

Authors: Patrick Maier, Fabian Hartmann, Judith Gabel, Maximilian Frank, Silke Kuhn, Philipp Scheiderer, Berengar Leikert, Michael Sing, Lukas Worschech, Ralph Claessen, Sven Höfling

Abstract: We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inherent memory functionality (memristance). For large and small gate voltages a simple non-linear resistance characteristic is observed while a pinched hy… ▽ More We report gate-tunable memristive switching in patterned LaAlO3/SrTiO3 interfaces at cryogenic temperatures. The application of voltages in the order of a few volts to the back gate of the device allows controlling and switching-on and -off the inherent memory functionality (memristance). For large and small gate voltages a simple non-linear resistance characteristic is observed while a pinched hysteresis loop and memristive switching occurs in an intermediate voltage range. The memristance is further controlled by the density of oxygen vacancies, which is tuned by annealing the sample at 300 °C in nitrogen atmosphere. Depending on the annealing time the memristance at zero gate voltage can be switched on and off leading to normally-on and normally-off memristors. The presented device offers reversible and irreversible control of memristive characteristics by gate voltages and annealing, respectively, which may allow to compensate fabrication variabilities of memristors that complicate the realization of large memristor-based neural networks. △ Less

Submitted 13 March, 2017; v1 submitted 17 October, 2016; originally announced October 2016.

Comments: 14 pages, 4 figures

Journal ref: Applied Physics Letters 110, 093506 (2017)

Three-dimensional electronic structures and the metal-insulator transition in Ruddlesden-Popper iridates

Authors: A. Yamasaki, H. Fujiwara, S. Tachibana, D. Iwasaki, Y. Higashino, C. Yoshimi, K. Nakagawa, Y. Nakatani, K. Yamagami, H. Aratani, O. Kirilmaz, M. Sing, R. Claessen, H. Watanabe, T. Shirakawa, S. Yunoki, A. Naitoh, K. Takase, J. Matsuno, H. Takagi, A. Sekiyama, Y. Saitoh

Abstract: In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This tran… ▽ More In this study, we systematically investigate 3D momentum($\hbar k$)-resolved electronic structures of Ruddlesden-Popper-type iridium oxides Sr$_{n+1}$Ir$_n$O$_{3n+1}$ using soft-x-ray (SX) angle-resolved photoemission spectroscopy (ARPES). Our results provide direct evidence of an insulator-to-metal transition that occurs upon increasing the dimensionality of the IrO$_2$-plane structure. This transition occurs when the spin-orbit-coupled $j_{\rm eff}$=1/2 band changes its behavior in the dispersion relation and moves across the Fermi energy. In addition, an emerging band along the $Γ$(0,0,0)-R($π$,$π$,$π$) direction is found to play a crucial role in the metallic characteristics of SrIrO$_3$. By scanning the photon energy over 350 eV, we reveal the 3D Fermi surface in SrIrO$_3$ and $k_z$-dependent oscillations of photoelectron intensity in Sr$_3$Ir$_2$O$_7$. In contrast to previously reported results obtained using low-energy photons, folded bands derived from lattice distortions and/or magnetic ordering make significantly weak (but finite) contributions to the $k$-resolved photoemission spectrum. At the first glance, this leads to the ambiguous result that the observed $k$-space topology is consistent with the unfolded Brillouin zone (BZ) picture derived from a non-realistic simple square or cubic Ir lattice. Through careful analysis, we determine that a superposition of the folded and unfolded band structures has been observed in the ARPES spectra obtained using photons in both ultraviolet and SX regions. To corroborate the physics deduced using low-energy ARPES studies, we propose to utilize SX-ARPES as a powerful complementary technique, as this method surveys more than one whole BZ and provides a panoramic view of electronic structures. △ Less

Submitted 14 October, 2016; originally announced October 2016.

Comments: 16 pages, 12 figures, 4 tables

Journal ref: Physical Review B 94, 115103 (2016)

Bismuthene on a SiC Substrate: A Candidate for a New High-Temperature Quantum Spin Hall Paradigm

Authors: F. Reis, G. Li, L. Dudy, M. Bauernfeind, S. Glass, W. Hanke, R. Thomale, J. Schäfer, R. Claessen

Abstract: Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH… ▽ More Quantum spin Hall (QSH) materials promise revolutionary device applications based on dissipationless propagation of spin currents. They are two-dimensional (2D) representatives of the family of topological insulators, which exhibit conduction channels at their edges inherently protected against scattering. Initially predicted for graphene, and eventually realized in HgTe quantum wells, in the QSH systems realized so far, the decisive bottleneck preventing applications is the small bulk energy gap of less than 30 meV, requiring cryogenic operation temperatures in order to suppress detrimental bulk contributions to the edge conductance. Room-temperature functionalities, however, require much larger gaps. Here we show how this can be achieved by making use of a new QSH paradigm based on substrate-supported atomic monolayers of a high-Z element. Experimentally, the material is synthesized as honeycomb lattice of bismuth atoms, forming "bismuthene", on top of the wide-gap substrate SiC(0001). Consistent with the theoretical expectations, the spectroscopic signatures in experiment display a huge gap of ~0.8 eV in bismuthene, as well as conductive edge states. The analysis of the layer-substrate orbitals arrives at a QSH phase, whose topological gap - as a hallmark mechanism - is driven directly by the atomic spin-orbit coupling (SOC). Our results demonstrate how strained artificial lattices of heavy atoms, in contact with an insulating substrate, can be utilized to evoke a novel topological wide-gap scenario, where the chemical potential is located well within the global system gap, ensuring pure edge state conductance. We anticipate future experiments on topological signatures, such as transport measurements that probe the QSH effect via quantized universal conductance, notably at room temperature. △ Less

Submitted 2 August, 2016; originally announced August 2016.

Comments: 4 figures

Journal ref: Science 357, 287-290 (2017)

Spin Chains and Electron Transfer at Stepped Silicon Surfaces

Authors: Julian Aulbach, Steven C. Erwin, Ralph Claessen, Joerg Schaefer

Abstract: High-index surfaces of silicon with adsorbed gold can reconstruct to form highly ordered linear step arrays. These steps take the form of a narrow strip of graphitic silicon. In some cases - specifically, for Si(553)-Au and Si(557)-Au - a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. The periodicity of this c… ▽ More High-index surfaces of silicon with adsorbed gold can reconstruct to form highly ordered linear step arrays. These steps take the form of a narrow strip of graphitic silicon. In some cases - specifically, for Si(553)-Au and Si(557)-Au - a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. The periodicity of this charge ordering is always commensurate with the structural periodicity along the step edge and hence leads to highly ordered arrays of local magnetic moments that can be regarded as "spin chains". Here, we demonstrate theoretically as well as experimentally that the closely related Si(775)-Au surface has - despite its very similar overall structure - zero spin polarization at its step edge. Using a combination of density-functional theory and scanning tunneling microscopy, we propose an electron-counting model that accounts for these differences. The model also predicts that unintentional defects and intentional dopants can create local spin moments at Si(hhk)-Au step edges. We analyze in detail one of these predictions and verify it experimentally. This finding opens the door to using techniques of surface chemistry and atom manipulation to create and control silicon spin chains. △ Less

Submitted 31 March, 2016; v1 submitted 27 January, 2016; originally announced January 2016.

Comments: 7 pages, 4 figures; Supplement; accepted for publication in Nano Letters

Two-dimensional crossover and strong coupling of plasmon excitations in arrays of one-dimensional atomic wires

Authors: Timo Lichtenstein, Julian Aulbach, Jörg Schäfer, Ralph Claessen, Christoph Tegenkamp, Herbert Pfnür

Abstract: The collective electronic excitations of arrays of Au chains on regularly stepped Si(553) and Si(775) surfaces were studied using electron loss spectroscopy with simultaneous high energy and momentum resolution (ELS-LEED) in combination with low energy electron diffraction (SPA-LEED) and tunneling microscopy. Both surfaces contain a double chain of gold atoms per terrace. Although one-dimensional… ▽ More The collective electronic excitations of arrays of Au chains on regularly stepped Si(553) and Si(775) surfaces were studied using electron loss spectroscopy with simultaneous high energy and momentum resolution (ELS-LEED) in combination with low energy electron diffraction (SPA-LEED) and tunneling microscopy. Both surfaces contain a double chain of gold atoms per terrace. Although one-dimensional metallicity and plasmon dispersion is observed only along the wires, two-dimensional effects are important, since plasmon dispersion explicitly depends both on the structural motif of the wires and the terrace width. The electron density on each terrace turns out to be modulated, as seen by tunneling spectroscopy (STS). The effective wire width of 7.5\,Å for Si(553)-Au -- 10.2\,Å for Si(775)-Au -- , determined from plasmon dispersion is in good agreement with STS data. Clear evidence for coupling between wires is seen beyond nearest neighbor coupling. △ Less

Submitted 20 January, 2016; originally announced January 2016.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 93, 161408 (2016)

Triangular Spin-Orbit-Coupled Lattice with Strong Coulomb Correlations: Sn Atoms on a SiC(0001) Substrate

Authors: Stefan Glass, Gang Li, Florian Adler, Julian Aulbach, Andrzej Fleszar, Ronny Thomale, Werner Hanke, Ralph Claessen, Jörg Schäfer

Abstract: Two-dimensional (2D) atom lattices provide model setups for Coulomb correlations inducing competing ground states, partly with topological character. Hexagonal SiC(0001) is an intriguing wide-gap substrate, spectroscopically separated from the overlayer and hence reduced screening. We report the first study of an artificial high-Z atom lattice on SiC(0001) by Sn adatoms, based on combined experime… ▽ More Two-dimensional (2D) atom lattices provide model setups for Coulomb correlations inducing competing ground states, partly with topological character. Hexagonal SiC(0001) is an intriguing wide-gap substrate, spectroscopically separated from the overlayer and hence reduced screening. We report the first study of an artificial high-Z atom lattice on SiC(0001) by Sn adatoms, based on combined experimental realization and theoretical modeling. Density-functional theory of our $\sqrt{3}$-structure model closely reproduces the scanning tunneling microscopy. Instead of metallic behavior, photoemission data show a deeply gapped state (~2 eV gap). Based on our calculations including dynamic mean-field theory, we argue that this reflects a pronounced Mott insulating scenario. We also find indications that the system is susceptible to antiferromagnetic superstructures. Such spin-orbit-coupled correlated heavy atom lattices on SiC(0001) thus form a novel testbed for peculiar quantum states of matter, with potential bearing for spin liquids and topological Mott insulators. △ Less

Submitted 19 January, 2015; originally announced January 2015.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. Lett. 114 (2015) 247602

Dimensionality-tuned electronic structure of nickelate superlattices explored by soft-x-ray angle resolved photoelectron spectroscopy

Authors: G. Berner, M. Sing, F. Pfaff, E. Benckiser, M. Wu, G. Christiani, G. Logvenov, H. -U. Habermeier, M. Kobayashi, V. N. Strocov, T. Schmitt, H. Fujiwara, S. Suga, A. Sekiyama, B. Keimer, R. Claessen

Abstract: The electronic and magnetic properties of epitaxial LaNiO3/LaAlO3 superlattices can be tuned by layer thickness and substrate-induced strain. Here, we report on direct measurements of the k-space-resolved electronic structure of buried nickelate layers in superlattices under compressive strain by soft x-ray photoemission. After disentangling strong extrinsic contributions to the angle-dependent si… ▽ More The electronic and magnetic properties of epitaxial LaNiO3/LaAlO3 superlattices can be tuned by layer thickness and substrate-induced strain. Here, we report on direct measurements of the k-space-resolved electronic structure of buried nickelate layers in superlattices under compressive strain by soft x-ray photoemission. After disentangling strong extrinsic contributions to the angle-dependent signal caused by photoelectron diffraction, we are able to extract Fermi surface information from our data. We find that with decreasing LaNiO3 thickness down to two unit cells (2 uc) quasiparticle coherence becomes strongly reduced, in accord with the dimension-induced metal-to-insulator transition seen in transport measurements. Nonetheless, on top of a strongly incoherent background a residual Fermi surface can be identified in the 2 uc superlattice whose nesting properties are consistent with the spin-density wave (SDW) instability recently reported. The overall behavior of the Ni 3d spectra and the absence of a complete gap opening indicate that the SDW phase is dominated by strong order parameter fluctuations. △ Less

Submitted 26 November, 2014; originally announced November 2014.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 92, 125130 (2015)

Electronic reconstruction at the isopolar LaTiO3/LaFeO3 interface: An x-ray photoemission and density functional theory study

Authors: J. E. Kleibeuker, Z. Zhong, H. Nishikawa, J. Gabel, A. Müller, F. Pfaff, M. Sing, K. Held, R. Claessen, G. Koster, G. Rijnders

Abstract: We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory calculations, we find that the formation of this interface state is driven by the combination of O band alignment and crystal field splitting energy of the t2g and eg b… ▽ More We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory calculations, we find that the formation of this interface state is driven by the combination of O band alignment and crystal field splitting energy of the t2g and eg bands. As a result of these two driving forces, the Fe 3d bands rearrange and electrons are transferred from Ti to Fe. This picture is supported by x-ray photoelectron spectroscopy, which confirms the rearrangement of the Fe 3d bands and reveals an unprecedented charge transfer up to 1.2+/-0.2 e-/interface unit cell in our LaTiO3/LaFeO3 heterostructures. △ Less

Submitted 5 November, 2014; originally announced November 2014.

Comments: Accepted for publication in Phys. Rev. Lett. (2014). Supplemental material is available upon request

Journal ref: Phys. Rev. Lett. 113, 237402 (2014)

Bulk Nature of Layered Perovskite Iridates beyond the Mott Scenario : An Approach from Bulk Sensitive Photoemission Study

Authors: A. Yamasaki, S. Tachibana, H. Fujiwara, A. Higashiya, A. Irizawa, O. Kirilmaz, F. Pfaff, P. Scheiderer, J. Gabel, M. Sing, T. Muro, M. Yabashi, K. Tamasaku, H. Sato, H. Namatame, M. Taniguchi, A. Hloskovskyy, H. Yoshida, H. Okabe, M. Isobe, J. Akimitsu, W. Drube, R. Claessen, T. Ishikawa, S. Imada , et al. (2 additional authors not shown)

Abstract: We present genuine bulk Ir 5d jeff states of layered perovskite iridates obtained by hard-x-ray photoemission spectroscopy (HAXPES) with s- and p-polarized lights. HAXPES spectra of Sr2IrO4 and Ba2IrO4 are well reproduced by the quasi-particle densities of states calculated by the local density approximation with dynamical mean-field theory (LDA+DMFT). It is demonstrated that the insulating nature… ▽ More We present genuine bulk Ir 5d jeff states of layered perovskite iridates obtained by hard-x-ray photoemission spectroscopy (HAXPES) with s- and p-polarized lights. HAXPES spectra of Sr2IrO4 and Ba2IrO4 are well reproduced by the quasi-particle densities of states calculated by the local density approximation with dynamical mean-field theory (LDA+DMFT). It is demonstrated that the insulating nature of the iridates is triggered by antiferromagnetic correlation (Slater type) combined with electron correlation (Mott type). The extremely-low-energy bulk-sensitive photoemission spectroscopy reveals "bad metallic" states in the paramagnetic phase of the iridates, suggesting strongly renormalized metallic states above the Neel temperature as predicted by the LDA+DMFT. △ Less

Submitted 2 March, 2014; v1 submitted 27 October, 2013; originally announced October 2013.

Comments: 5 pages, 3 figures

Evidence for Long-Range Spin Order Instead of a Peierls Transition in Si(553)-Au Chains

Authors: J. Aulbach, J. Schaefer, S. C. Erwin, S. Meyer, C. Loho, J. Settelein, R. Claessen, -

Abstract: Stabilization of the Si(553) surface by Au adsorption results in two different atomically defined chain types, one of Au atoms and one of Si. At low temperature these chains develop two- and threefold periodicity, respectively, previously attributed to Peierls instabilities. Here we report evidence from scanning tunneling microscopy that rules out this interpretation. The x3 superstructure of the… ▽ More Stabilization of the Si(553) surface by Au adsorption results in two different atomically defined chain types, one of Au atoms and one of Si. At low temperature these chains develop two- and threefold periodicity, respectively, previously attributed to Peierls instabilities. Here we report evidence from scanning tunneling microscopy that rules out this interpretation. The x3 superstructure of the Si chains vanishes for low tunneling bias, i.e., close the Fermi level. In addition, the Au chains remain metallic despite their period doubling. Both observations are inconsistent with a Peierls mechanism. On the contrary, our results are in excellent, detailed agreement with the Si(553)-Au ground state predicted by density-functional theory, where the x2 periodicity of the Au chain is an inherent structural feature and every third Si atom is spin-polarized. △ Less

Submitted 4 September, 2013; originally announced September 2013.

Comments: 5 pages, 4 figures (supplement not included here). Accepted for publication at Physical Review Letters on September 03, 2013

Journal ref: Phys. Rev. Lett. 111 (2013) 137203

Elemental Topological Insulator with a Tunable Fermi Level: Strained α-Sn on InSb(001)

Authors: A. Barfuss, L. Dudy, M. R. Scholz, H. Roth, P. Höpfner, C. Blumenstein, G. Landolt, J. H. Dil, N. C. Plumb, M. Radovic, A. Bostwick, E. Rotenberg, A. Fleszar, G. Bihlmayer, D. Wortmann, G. Li, W. Hanke, R. Claessen, J. Schäfer

Abstract: We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-pola… ▽ More We report on the epitaxial fabrication and electronic properties of a topological phase in strained α-Sn on InSb. The topological surface state forms in the presence of an unusual band order not based on direct spin-orbit coupling, as shown in density functional and GW slab-layer calculations. Angle-resolved photoemission including spin detection probes experimentally how the topological spin-polarized state emerges from the second bulk valence band. Moreover, we demonstrate the precise control of the Fermi level by dopants. △ Less

Submitted 9 September, 2013; v1 submitted 4 August, 2013; originally announced August 2013.

Comments: version 2 with supplementary information

Journal ref: Phys. Rev. Lett. 111 (2013) 157205

Direct k-space map** of the electronic structure in an oxide-oxide interface

Authors: G. Berner, M. Sing, H. Fujiwara, A. Yasui, Y. Saitoh, A. Yamasaki, Y. Nishitani, A. Sekiyama, N. Pavlenko, T. Kopp, C. Richter, J. Mannhart, S. Suga, R. Claessen

Abstract: The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron s… ▽ More The interface between LaAlO3 and SrTiO3 hosts a two-dimensional electron system of itinerant carriers, although both oxides are band insulators. Interface ferromagnetism coexisting with superconductivity has been found and attributed to local moments. Experimentally, it has been established that Ti 3d electrons are confined to the interface. Using soft x-ray angle-resolved resonant photoelectron spectroscopy we have directly mapped the interface states in k-space. Our data demonstrate a charge dichotomy. A mobile fraction contributes to Fermi surface sheets, whereas a localized portion at higher binding energies is tentatively attributed to electrons trapped by O-vacancies in the SrTiO3. While photovoltage effects in the polar LaAlO3 layers cannot be excluded, the apparent absence of surface-related Fermi surface sheets could also be fully reconciled in a recently proposed electronic reconstruction picture where the built-in potential in the LaAlO3 is compensated by surface O-vacancies serving also as charge reservoir. △ Less

Submitted 18 June, 2013; v1 submitted 13 January, 2013; originally announced January 2013.

Comments: 8 pages, 6 figures, incl. Supplemental Information

Journal ref: Phys. Rev. Lett. 110, 247601 (2013)