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Origin of pinning disorder in magnetic-field-induced Wigner solids
Authors:
Matthew L. Freeman,
P. T. Madathil,
L. N. Pfeiffer,
K. W. Baldwin,
Y. J. Chung,
R. Winkler,
M. Shayegan,
L. W. Engel
Abstract:
At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown.…
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At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here we present a study of the pinning mode resonance in the low-$ν$ Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths, $d$. The pinning mode frequencies,$f_p$, decrease strongly as $d$ increases, with the widest well exhibiting $f_p$ as low as $\simeq$35 MHz. The amount of reduction of \fp\ with increasing $d$ can be explained remarkably well by tails of the wave function im**ing into the alloy-disordered Al$_x$Ga$_{1-x}$As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well.
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Submitted 10 April, 2024;
originally announced April 2024.
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Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit
Authors:
P. T. Madathil,
C. Wang,
S. K. Singh,
A. Gupta,
K. A. Villegas Rosales,
Y. J. Chung,
K. W. West,
K. W. Baldwin,
L. N. Pfeiffer,
L. W. Engel,
M. Shayegan
Abstract:
Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's mos…
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Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's most fundamental parameters, namely the energy gap that determines its low-temperature conductivity, in record-mobility, ultra-high-purity, two-dimensional electrons confined to GaAs quantum wells. The WC domains in these samples contain $\simeq$ 1000 electrons. The measured gaps are a factor of three larger than previously reported for lower quality samples, and agree remarkably well with values predicted for the lowest-energy, intrinsic, hyper-corelated bubble defects in a WC made of flux-electron composite fermions, rather than bare electrons. The agreement is particularly noteworthy, given that the calculations are done for disorder-free composite fermion WCs, and there are no adjustable parameters. The results reflect the exceptionally high quality of the samples, and suggest that composite fermion WCs are indeed more stable compared to their electron counterparts.
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Submitted 12 March, 2024;
originally announced March 2024.
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Anomalous acousto-current within the quantum Hall plateaus
Authors:
Renfei Wang,
Xiao Liu,
Mengmeng Wu,
Yoon Jang Chung,
Adbhut Gupta,
Kirk W. Baldwin,
Mansour Shayegan,
Loren Pfeiffer,
Xi Lin,
Yang Liu
Abstract:
We systematically study the acousto-current of two-dimensional electron systems in the integer and fractional quantum Hall regimes using surface acoustic waves. We are able to separate the co-existing acoustic scattering and drag, when phonons induce drag current and tune the electron conductivity, respectively. At large acoustic power, the drag current is finite when the system is compressible an…
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We systematically study the acousto-current of two-dimensional electron systems in the integer and fractional quantum Hall regimes using surface acoustic waves. We are able to separate the co-existing acoustic scattering and drag, when phonons induce drag current and tune the electron conductivity, respectively. At large acoustic power, the drag current is finite when the system is compressible and exhibits minima when incompressible quantum Hall effects appear. Surprisingly, it exhibits anomalously large bipolar spikes within the quantum Hall plateaus while it vanishes linearly with reduced acoustic power at compressible phases. The current peaks reverse their polarity at the two flanks of exact integer or fractional fillings, consistent with the opposite electric charge of the quasiparticle/quasihole.
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Submitted 22 March, 2024; v1 submitted 26 February, 2024;
originally announced February 2024.
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Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Authors:
P. T. Madathil,
K. A. Villegas Rosales,
Y. J. Chung,
K. W. West,
K. W. Baldwin,
L. N. Pfeiffer,
L. W. Engel,
M. Shayegan
Abstract:
In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics…
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In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics. We report here, measurements on an ultra-low-disorder, dilute 2DES, confined to a GaAs quantum well. In the $ν< 1/5$ range, superimposed on a highly-insulating longitudinal resistance, the 2DES exhibits a develo** fractional quantum Hall state at $ν=1/7$, attesting to its exceptional high quality, and dominance of electron-electron interaction in the low filling regime. In the nearby insulating phases, we observe remarkable non-linear \textit{I-V} and noise characteristics as a function of increasing current, with current thresholds delineating three distinct phases of the WS: a pinned phase (P1) with very small noise, a second phase (P2) in which $dV/dI$ fluctuates between positive and negative values and is accompanied by very high noise, and a third phase (P3) where $dV/dI$ is nearly constant and small, and noise is about an order of magnitude lower than in P2. In the depinned (P2 and P3) phases, the noise spectrum also reveals well-defined peaks at frequencies that vary linearly with the applied current, suggestive of washboard frequencies. We discuss the data in light of a recent theory that proposes different dynamic phases for a driven WS.
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Submitted 24 January, 2024;
originally announced January 2024.
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Fractional Quantum Hall State at Filling Factor $ν=1/4$ in Ultra-High-Quality GaAs 2D Hole Systems
Authors:
Chengyu Wang,
A. Gupta,
S. K. Singh,
P. T. Madathil,
Y. J. Chung,
L. N. Pfeiffer,
K. W. Baldwin,
R. Winkler,
M. Shayegan
Abstract:
Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors $ν<1$. Here we report evidence for an even-denominator FQHS at $ν=1/4$ in ultra-high-quality…
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Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors $ν<1$. Here we report evidence for an even-denominator FQHS at $ν=1/4$ in ultra-high-quality two-dimensional hole systems confined to modulation-doped GaAs quantum wells. We observe a deep minimum in the longitudinal resistance at $ν=1/4$, superimposed on a highly insulating background, suggesting a close competition between the $ν=1/4$ FQHS and the magnetic-field-induced, pinned Wigner solid states. Our experimental observations are consistent with the very recent theoretical calculations which predict that substantial Landau level mixing, caused by the large hole effective mass, can induce composite fermion pairing and lead to a non-Abelian FQHS at $ν=1/4$. Our results demonstrate that Landau level mixing can provide a very potent means for tuning the interaction between composite fermions and creating new non-Abelian FQHSs.
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Submitted 22 November, 2023;
originally announced November 2023.
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Metastable Charge Distribution Between Degenerate Landau Levels
Authors:
Wenlu Lin,
Xing Fan,
Lili Zhao,
Yoon Jang Chung,
Adbhut Gupta,
Kirk W. Baldwin,
Loren Pfeiffer,
Hong Lu,
Yang Liu
Abstract:
We study two dimensional electron systems confined in wide quantum wells whose subband separation is comparable with the Zeeman energy. Two N = 0 Landau levels from different subbands and with opposite spins are pinned in energy when they cross each other and electrons can freely transfer between them. When the disorder is strong, we observe clear hysteresis in our data corresponding to instabilit…
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We study two dimensional electron systems confined in wide quantum wells whose subband separation is comparable with the Zeeman energy. Two N = 0 Landau levels from different subbands and with opposite spins are pinned in energy when they cross each other and electrons can freely transfer between them. When the disorder is strong, we observe clear hysteresis in our data corresponding to instability of the electron distribution in the two crossing levels. When the intra-layer interaction dominates, multiple minima appear when a Landau level is 1/3 or 2/3 filled and fractional quantum hall effect can be stabilized.
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Submitted 26 February, 2024; v1 submitted 8 September, 2023;
originally announced September 2023.
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Probing quantum phases in ultra-high-mobility two-dimensional electron systems using surface acoustic waves
Authors:
Mengmeng Wu,
Xiao Liu,
Renfei Wang,
Yoon Jang Chung,
Adbhut Gupta,
Kirk W. Baldwin,
Loren Pfeiffer,
Xi Lin,
Yang Liu
Abstract:
Transport measurement, which applies an electric field and studies the migration of charged particles, i.e. the current, is the most widely used technique in condensed matter studies. It is generally assumed that the quantum phase remains unchanged when it hosts a sufficiently small probing current, which is, surprisingly, rarely examined experimentally. In this work, we study the ultra-high mobil…
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Transport measurement, which applies an electric field and studies the migration of charged particles, i.e. the current, is the most widely used technique in condensed matter studies. It is generally assumed that the quantum phase remains unchanged when it hosts a sufficiently small probing current, which is, surprisingly, rarely examined experimentally. In this work, we study the ultra-high mobility two-dimensional electron system using a propagating surface acoustic wave, whose traveling speed is affected by the electrons' compressibility. The acoustic power used in our study is several orders of magnitude lower than previous reports, and its induced perturbation to the system is smaller than the transport current. Therefore we are able to observe the quantum phases become more incompressible when hosting a perturbative current.
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Submitted 31 January, 2024; v1 submitted 5 July, 2023;
originally announced July 2023.
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Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions
Authors:
P. T. Madathil,
K. A. Villegas Rosales,
C. T. Tai,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimental…
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Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimentally, scaling has been investigated via measuring the temperature dependence of plateau-to-plateau transitions between the integer quantum Hall states (IQHSs), yielding a critical exponent $κ\simeq 0.42$. Here we report scaling measurements in the fractional quantum Hall state (FQHS) regime where interaction plays a dominant role. Our study is partly motivated by recent calculations, based on the composite fermion theory, that suggest identical critical exponents in both IQHS and FQHS cases to the extent that the interaction between composite fermions is negligible. The samples used in our experiments are two-dimensional electron systems confined to GaAs quantum wells of exceptionally high quality. We find that $κ$ varies for transitions between different FQHSs observed on the flanks of Landau level filling factor $ν=1/2$, and has a value close to that reported for the IQHS transitions only for a limited number of transitions between high-order FQHSs with intermediate strength. We discuss possible origins of the non-universal $κ$ observed in our experiments.
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Submitted 6 June, 2023;
originally announced June 2023.
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Highly-Anisotropic Even-Denominator Fractional Quantum Hall State in an Orbitally-Coupled Half-Filled Landau Level
Authors:
Chengyu Wang,
A. Gupta,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler,
M. Shayegan
Abstract:
The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the competition and interplay between the even-denominator FQHSs and other ground states, such as anisotropic phases and composite fermion Fermi seas. Here we report the…
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The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the competition and interplay between the even-denominator FQHSs and other ground states, such as anisotropic phases and composite fermion Fermi seas. Here we report the observation of an even-denominator fractional quantum Hall state with highly-anisotropic in-plane transport coefficients at Landau level filling factor $ν=3/2$. We observe this state in an ultra-high-quality GaAs two-dimensional hole system when a large in-plane magnetic field is applied. By increasing the in-plane field, we observe a sharp transition from an isotropic composite fermion Fermi sea to an anisotropic even-denominator FQHS. Our data and calculations suggest that a unique feature of two-dimensional holes, namely the coupling between heavy-hole and light-hole states, combines different orbital components in the wavefunction of one Landau level, and leads to the emergence of a highly-anisotropic even-denominator fractional quantum Hall state. Our results demonstrate that the GaAs two-dimensional hole system is a unique platform for the exploration of exotic, many-body ground states.
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Submitted 18 October, 2023; v1 submitted 29 March, 2023;
originally announced March 2023.
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Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system
Authors:
Md. Shafayat Hossain,
M. K. Ma,
Y. J. Chung,
S. K. Singh,
A. Gupta,
K. W. West,
K. W. Baldwin,
L. N. Pfeiffer,
R. Winkler,
M. Shayegan
Abstract:
Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($ν$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $ν=1/2$ in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band va…
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Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($ν$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $ν=1/2$ in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multi-valley degree of freedom offer an unprecedented tunability of the $ν=1/2$ FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the $ν=1/2$ FQHS depend strongly on valley occupancy.
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Submitted 20 March, 2023;
originally announced March 2023.
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Dynamic Response of Wigner Crystals
Authors:
Lili Zhao,
Wenlu Lin,
Yoon Jang Chung,
Adbhut Gupta,
Kirk W. Baldwin,
Loren N. Pfeiffer,
Yang Liu
Abstract:
The Wigner crystal, an ordered array of electrons, is one of the very first proposed many-body phases stabilized by the electron-electron interaction. This electron solid phase has been reported in ultra-clean two-dimensional electron systems at extremely low temperatures, where the Coulomb interaction dominants over the kinetic energy, disorder potential and thermal fluctuation. We closely examin…
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The Wigner crystal, an ordered array of electrons, is one of the very first proposed many-body phases stabilized by the electron-electron interaction. This electron solid phase has been reported in ultra-clean two-dimensional electron systems at extremely low temperatures, where the Coulomb interaction dominants over the kinetic energy, disorder potential and thermal fluctuation. We closely examine this quantum phase with capacitance measurements where the device length-scale is comparable with the crystal's correlation length. The extraordinarily high performance of our technique makes it possible to quantitatively study the dynamic response of the Wigner crystal within the single crystal regime. Our result will greatly boost the study of this inscrutable electron solid.
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Submitted 4 January, 2023;
originally announced January 2023.
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Fractional quantum Hall valley ferromagnetism in the extreme quantum limit
Authors:
Md. Shafayat Hossain,
M. K. Ma,
Y. J. Chung,
S. K. Singh,
A. Gupta,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler,
M. Shayegan
Abstract:
Electrons' multiple quantum degrees of freedom can lead to rich physics, including a competition between various exotic ground states, as well as novel applications such as spintronics and valleytronics. Here we report magneto-transport experiments demonstrating how the valley degree of freedom impacts the fractional quantum states (FQHSs), and the related magnetic-flux-electron composite fermions…
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Electrons' multiple quantum degrees of freedom can lead to rich physics, including a competition between various exotic ground states, as well as novel applications such as spintronics and valleytronics. Here we report magneto-transport experiments demonstrating how the valley degree of freedom impacts the fractional quantum states (FQHSs), and the related magnetic-flux-electron composite fermions (CFs), at very high magnetic fields in the extreme quantum limit when only the lowest Landau level is occupied. Unlike in other multivalley two-dimensional electron systems such as Si or monolayer graphene and transition-metal dichalcogenides, in our AlAs sample we can continuously tune the valley polarization via the application of in-situ strain. We find that the FQHSs remain exceptionally strong even as they make valley polarization transitions, revealing a surprisingly robust ferromagnetism of the FQHSs and the underlying CFs. Our observation implies that the CFs are strongly interacting in our system. We are also able to obtain a phase diagram for the FQHS and CF valley polarization in the extreme quantum limit as we monitor transitions of the FHQSs with different valley polarizations.
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Submitted 17 November, 2022;
originally announced November 2022.
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Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν = 1 Landau Level Crossing
Authors:
Meng K. Ma,
Chengyu Wang,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler,
M. Shayegan
Abstract:
In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. We st…
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In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. We study here a very high-quality, low-density, two-dimensional hole system, confined to a 30-nm-wide (001) GaAs quantum well, in which the two lowest-energy Landau levels can be gate tuned to cross at and near filling factor $ν=1$. As we tune the field position of the crossing from one side of $ν=1$ to the other by changing the hole density, the energy gap for the quantum Hall state at $ν=1$ remains exceptionally large, and only shows a small dip near the crossing. The gap overall follows a $\sqrt{B}$ dependence, expected for the exchange energy. Our data are consistent with a robust quantum Hall ferromagnet as the ground state.
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Submitted 9 November, 2022;
originally announced November 2022.
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Even-Denominator Fractional Quantum Hall State at Filling Factor ν = 3/4
Authors:
Chengyu Wang,
A. Gupta,
S. K Singh,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler,
M. Shayegan
Abstract:
Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasi-particles are generally believed to obey non-Abelian statistics and be of p…
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Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasi-particles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor ν = 3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Our magneto-transport measurements reveal a strong minimum in the longitudinal resistance at ν = 3/4, accompanied by a develo** Hall plateau centered at (h/e2)/(3/4). This even-denominator FQHS is very unusual as it is observed in the lowest Landau level and in a 2D hole system. While its origin is unclear, it is likely a non-Abelian state, emerging from the residual interaction between composite fermions.
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Submitted 6 October, 2022;
originally announced October 2022.
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Composite Fermion Mass
Authors:
K. A. Villegas Rosales,
P. T. Madathil,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental propert…
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Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental property of a FQHS, namely its energy gap. We present here experimental measurements of $m_{CF}$ in ultra-high quality two-dimensional electron systems confined to GaAs quantum wells of varying thickness. An advantage of measuring $m_{CF}$ over gap measurements is that mass values are insensitive to disorder and are therefore ideal for comparison with theoretical calculations, especially for high-order FQHS. Our data reveal that $m_{CF}$ increases with increasing well width, reflecting a decrease in the energy gap as the electron layer becomes thicker and the in-plane Coulomb energy softens. Comparing our measured masses with available theoretical results, we find significant quantitative discrepancies, highlighting that more rigorous and accurate calculations are needed to explain the experimental data.
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Submitted 16 July, 2022;
originally announced July 2022.
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Anisotropic, two-dimensional, disordered Wigner solid
Authors:
Md. S. Hossain,
M. K. Ma,
K. A. Villegas-Rosales,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
The interplay between the Fermi sea anisotropy, electron-electron interaction, and localization phenomena can give rise to exotic many-body phases. An exciting example is an anisotropic two-dimensional (2D) Wigner solid (WS), where electrons form an ordered array with an anisotropic lattice structure. Such a state has eluded experiments up to now as its realization is extremely demanding: First, a…
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The interplay between the Fermi sea anisotropy, electron-electron interaction, and localization phenomena can give rise to exotic many-body phases. An exciting example is an anisotropic two-dimensional (2D) Wigner solid (WS), where electrons form an ordered array with an anisotropic lattice structure. Such a state has eluded experiments up to now as its realization is extremely demanding: First, a WS entails very low densities where the Coulomb interaction dominates over the kinetic (Fermi) energy. Attaining such low densities while kee** the disorder low is very challenging. Second, the low-density requirement has to be fulfilled in a material that hosts an anisotropic Fermi sea. Here, we report transport measurements in a clean (low-disorder) 2D electron system with anisotropic effective mass and Fermi sea. The data reveal that at extremely low electron densities, when the r_s parameter, the ratio of the Coulomb to the Fermi energy, exceeds 38, the current-voltage characteristics become strongly nonlinear at small dc biases. Several key features of the nonlinear characteristics, including their anisotropic voltage thresholds, are consistent with the formation of a disordered, anisotropic WS pinned by the ubiquitous disorder potential.
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Submitted 13 July, 2022;
originally announced July 2022.
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Understanding limits to mobility in ultra-high-mobility GaAs two-dimensional electron systems: The quest for 100 million cm$^2$/Vs and beyond
Authors:
Yoon Jang Chung,
A. Gupta,
K. W. Baldwin,
K. W. West,
M. Shayegan,
L. N. Pfeiffer
Abstract:
For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of success for GaAs 2DESs was continuous sample quality improvement, which enabled scattering-free transport over macroscopic length scales as well as the emergence of…
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For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of success for GaAs 2DESs was continuous sample quality improvement, which enabled scattering-free transport over macroscopic length scales as well as the emergence of a diverse range of exotic many-body phenomena. While the recent breakthrough in the quality of GaAs 2DESs grown by molecular beam epitaxy is highly commendable in this context, it is also important and timely to establish an up-to-date understanding of what obstructs us from pushing the mobility limit even further. Here, we present mobility data taken at a temperature of 0.3 K for a wide variety of state-of-the-art GaAs 2DESs, exhibiting a maximum, world-record mobility of $μ\simeq57\times10^6$ cm$^2$/Vs at a 2DES density of $n=1.55\times10^{11}$ /cm$^2$. We also provide comprehensive analyses of the collective scattering mechanisms that can explain the results. Furthermore, based on our study, we discuss potential scenarios where GaAs 2DES mobility values exceeding $100\times10^6$ cm$^2$/Vs could be achieved.
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Submitted 28 June, 2022;
originally announced June 2022.
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Correlated states of 2D electrons near the Landau level filling $ν=1/7$
Authors:
Yoon Jang Chung,
D. Graf,
L. W. Engel,
K. A. Villegas Rosales,
P. T. Madathil,
K. W. Baldwin,
K. W. West,
L. N. Pfeiffer,
M. Shayegan
Abstract:
The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density…
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The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density $n=6.1\times10^{10}$ /cm$^2$ and mobility $μ=25\times10^6$ cm$^2$/Vs, we find a deep minimum in the longitudinal magnetoresistance ($R_{xx}$) at $ν=1/7$ when $T\simeq104$ mK. There is also a clear sign of a develo** minimum in the $R_{xx}$ at $ν=2/13$. While insulating phases are still predominant when $ν\lesssim1/6$, these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence $ν=p/(2mp\pm1)$ even in the very low Landau level filling limit. The magnetic field dependent activation energies deduced from the relation $R_{xx}\propto e^{E_A/2kT}$ corroborate this view, and imply the presence of pinned Wigner solid states when $ν\neq p/(2mp\pm1)$. Similar results are seen in another sample with a lower density, further generalizing our observations.
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Submitted 20 March, 2022;
originally announced March 2022.
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Record-quality GaAs two-dimensional hole systems
Authors:
Yoon Jang Chung,
C. Wang,
S. K. Singh,
A. Gupta,
K. W. Baldwin,
K. W. West,
R. Winkler,
M. Shayegan,
L. N. Pfeiffer
Abstract:
The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation do**, with mobility values as hi…
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The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation do**, with mobility values as high as $5.8\times10^6$ cm$^2$/Vs at a hole density of $p=1.3\times10^{11}$ /cm$^2$, implying a mean-free path of $\simeq27$ $μ$m. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling $ν=12/25$ near $ν=1/2$. Furthermore, we see a deep minimum develop at $ν=1/5$ in the magnetoresistance of a sample with a much lower hole density of $p=4.0\times10^{10}$ /cm$^2$ where we measure a mobility of $3.6\times10^6$ cm$^2$/Vs. These improvements in sample quality were achieved by reduction of residual impurities both in the GaAs channel and the AlGaAs barrier material, as well as optimization in design of the sample structure.
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Submitted 20 March, 2022;
originally announced March 2022.
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Capacitive Response of Wigner Crystals at the Quantum Hall Plateau
Authors:
Lili Zhao,
Wenlu Lin,
Y. J. Chung,
K. W. Baldwin,
L. N. Pfeiffer,
Yang Liu
Abstract:
In this report, we study ultra-high-mobility two-dimensional (2D) electron/hole systems with high precision capacitance measurement. We find that the capacitance charge appears only at the fringe of the gate at high magnetic field when the 2D conductivity decreases significantly. At integer quantum Hall effects, the capacitance vanishes and forms a plateau at high temperatures $T\gtrsim 300$ mK, w…
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In this report, we study ultra-high-mobility two-dimensional (2D) electron/hole systems with high precision capacitance measurement. We find that the capacitance charge appears only at the fringe of the gate at high magnetic field when the 2D conductivity decreases significantly. At integer quantum Hall effects, the capacitance vanishes and forms a plateau at high temperatures $T\gtrsim 300$ mK, which surprisingly, disappears at $T\lesssim 100$ mK. This anomalous behavior is likely a manifestation that the dilute particles/vacancies in the top-most Landau level form Wigner crystal, which has finite compressibility and can host polarization current.
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Submitted 16 January, 2022;
originally announced January 2022.
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Melting phase diagram of bubble phases in high Landau levels
Authors:
K. A. Villegas,
S. K. Singh,
H. Deng,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
A low-disorder, two-dimensional electron system (2DES) subjected to a large perpendicular magnetic field and cooled to very low temperatures provides a rich platform for studies of many-body quantum phases. The magnetic field quenches the electrons' kinetic energy and quantizes the energy into a set of Landau levels, allowing the Coulomb interaction to dominate. In excited Landau levels, the fine…
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A low-disorder, two-dimensional electron system (2DES) subjected to a large perpendicular magnetic field and cooled to very low temperatures provides a rich platform for studies of many-body quantum phases. The magnetic field quenches the electrons' kinetic energy and quantizes the energy into a set of Landau levels, allowing the Coulomb interaction to dominate. In excited Landau levels, the fine interplay between short- and long-range interactions stabilizes bubble phases, Wigner crystals with more than one electron per unit cell. Here we present the screening properties of bubble phases, probed via a simple capacitance technique where the 2DES is placed between a top and a bottom gate and the electric field penetrating through the 2DES is measured. The bubbles formed at very low temperatures screen the electric field poorly as they are pinned by the residual disorder potential, allowing a large electric field to reach the top gate. As the temperature is increased, the penetrating electric field decreases and, surprisingly, exhibits a pronounced minimum at a temperature that appears to coincide with the melting temperature of the bubble phase. We deduce a quantitative phase diagram for the transition from bubble to liquid phases for Landau level filling factors $4\leqν\leq5$.
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Submitted 27 August, 2021;
originally announced August 2021.
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Fractional quantum Hall effect energy gap: role of electron layer thickness
Authors:
K. A. Villegas Rosales,
P. T. Madathil,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally mea…
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The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a quantitative comparison between the measured energy gaps and the available theoretical calculations that take into account the role of finite layer thickness and Landau level mixing. Our systematic experimental study of the FQHE energy gaps uses very high-quality two-dimensional electron systems confined to GaAs quantum wells with varying well widths. All the measured energy gaps fall bellow the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find the measured energy gaps to be in reasonable quantitative agreement with calculations, although some discrepancies remain.
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Submitted 6 April, 2021;
originally announced April 2021.
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Observation of spontaneous valley polarization of itinerant electrons
Authors:
Md. S. Hossain,
M. K. Ma,
K. A. Villegas Rosales,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit electron's valley index rather than its spin. An important component in this quest would be the ability to control the valley index…
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Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit electron's valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to one by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, two-fold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment.
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Submitted 15 November, 2020; v1 submitted 12 November, 2020;
originally announced November 2020.
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Observation of Spontaneous Ferromagnetism in a Two-Dimensional Electron System
Authors:
Md. S. Hossain,
M. K. Ma,
K. A. Villegas Rosales,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid,…
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What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid, an ordered array of electrons, should occur. Experimental access to these regimes, however, has been limited because of the absence of a material platform that supports an electron system with very high-quality (low disorder) and low density simultaneously. Here we explore the ground states of interacting electrons in an exceptionally-clean, two-dimensional electron system confined to a modulation-doped AlAs quantum well. The large electron effective mass in this system allows us to reach very large values of the interaction parameter $r_s$, defined as the ratio of the Coulomb to Fermi energies. As we lower the electron density via gate bias, we find a sequence of phases, qualitatively consistent with the above scenario: a paramagnetic phase at large densities, a spontaneous transition to a ferromagnetic state when $r_s$ surpasses 35, and then a phase with strongly non-linear current-voltage characteristics, suggestive of a pinned Wigner solid, when $r_s$ exceeds $\simeq 38$. However, our sample makes a transition to an insulating state at $r_s\simeq 27$, preceding the onset of the spontaneous ferromagnetism, implying that, besides interaction, the role of disorder must also be taken into account in understanding the different phases of a realistic dilute electron system.
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Submitted 2 November, 2020;
originally announced November 2020.
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Competition between fractional quantum Hall liquid and Wigner solid at small fillings: Role of layer thickness and Landau level mixing
Authors:
K. A. Villegas Rosales,
S. K. Singh,
Meng K. Ma,
Md. Shafayat Hossain,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($ν$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely…
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What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($ν$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $ν=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $\simeq 1/3$ and $\simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states.
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Submitted 29 October, 2020;
originally announced October 2020.
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Ultra-high quality two-dimensional electron systems
Authors:
Yoon Jang Chung,
K. A. Villegas-Rosales,
K. W. Baldwin,
P. T. Madathil,
K. W. West,
M. Shayegan,
L. N. Pfeiffer
Abstract:
Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra…
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Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of $44\times10^6$ cm$^2$/Vs at an electron density of $2.0\times10^{11}$ /cm$^2$. These results imply only 1 residual impurity for every $10^{10}$ Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe/bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap of the $ν=5/2$ state, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches $Δ\simeq820$ mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and significantly advance the field.
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Submitted 19 April, 2021; v1 submitted 5 October, 2020;
originally announced October 2020.
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Bloch Ferromagnetism of Composite Fermions
Authors:
Md. Shafayat Hossain,
Tongzhou Zhao,
Songyang Pu,
M. A. Mueed,
M. K. Ma,
K. A. Villegas Rosales,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
J. K. Jain,
M. Shayegan
Abstract:
In 1929 Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully-magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. We report here the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferroma…
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In 1929 Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully-magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. We report here the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism that has eluded experiments for the last ninety years. Our platform is the exotic two-dimensional Fermi sea of composite fermions at half-filling of the lowest Landau level. Via quantitative measurements of the Fermi wavevector, which provides a direct measure of the spin polarization, we observe a sudden transition from a partially-spin-polarized to a fully-spin-polarized ground state as we lower the composite fermions' density. Our detailed theoretical calculations provide a semi-quantitative account of this phenomenon.
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Submitted 26 August, 2020;
originally announced August 2020.
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Precise Experimental Test of the Luttinger Theorem and Particle-Hole Symmetry for a Strongly Correlated Fermionic System
Authors:
Md. S. Hossain,
M. A. Mueed,
M. K. Ma,
K. A. V. Rosales,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
A fundamental concept in physics is the Fermi surface, the constant-energy surface in momentum space encompassing all the occupied quantum states at absolute zero temperature. In 1960, Luttinger postulated that the area enclosed by the Fermi surface should remain unaffected even when electron-electron interaction is turned on, so long as the interaction does not cause a phase transition. Understan…
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A fundamental concept in physics is the Fermi surface, the constant-energy surface in momentum space encompassing all the occupied quantum states at absolute zero temperature. In 1960, Luttinger postulated that the area enclosed by the Fermi surface should remain unaffected even when electron-electron interaction is turned on, so long as the interaction does not cause a phase transition. Understanding what determines the Fermi surface size is a crucial and yet unsolved problem in strongly interacting systems such as high-$T_{c}$ superconductors. Here we present a precise test of the Luttinger theorem for a two-dimensional Fermi liquid system where the exotic quasi-particles themselves emerge from the strong interaction, namely for the Fermi sea of composite fermions (CFs). Via direct, geometric resonance measurements of the CFs' Fermi wavevector down to very low electron densities, we show that the Luttinger theorem is obeyed over a significant range of interaction strengths, in the sense that the Fermi sea area is determined by the density of the \textit{minority carriers} in the lowest Landau level. Our data also address the ongoing debates on whether or not CFs obey particle-hole symmetry, and if they are Dirac particles. We find that particle-hole symmetry is obeyed, but the measured Fermi sea area differs quantitatively from that predicted by the Dirac model for CFs.
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Submitted 20 July, 2020;
originally announced July 2020.
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Heterostructure design to achieve high quality, high density GaAs 2D electron system with $g$-factor tending to zero
Authors:
Yoon Jang Chung,
S. Yuan,
Yang Liu,
K. W. Baldwin,
K. W. West,
M. Shayegan,
L. N. Pfeiffer
Abstract:
Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Landé $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value $g\simeq-0.44$ to zero and even to positive values under a sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-elec…
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Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Landé $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value $g\simeq-0.44$ to zero and even to positive values under a sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-electron interaction in a system with $g=0$, studies are quite limited because the GaAs 2DES density decreases significantly with increasing hydrostatic pressure. Here we show that a simple model, based on pressure-dependent changes in the conduction band alignment, quantitatively explains this commonly observed trend. Furthermore, we demonstrate that the decrease in the 2DES density can be suppressed by more than a factor of 3 through an innovative heterostructure design.
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Submitted 19 April, 2021; v1 submitted 22 June, 2020;
originally announced June 2020.
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Thermal and quantum melting phase diagrams for a magnetic-field-induced Wigner solid
Authors:
Meng K. Ma,
K. A. Villegas Rosales,
H. Deng,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
R. Winkler,
M. Shayegan
Abstract:
A sufficiently large perpendicular magnetic field quenches the kinetic (Fermi) energy of an interacting two-dimensional (2D) system of fermions, making them susceptible to the formation of a Wigner solid (WS) phase in which the charged carriers organize themselves in a periodic array in order to minimize their Coulomb repulsion energy. In low-disorder 2D electron systems confined to modulation-dop…
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A sufficiently large perpendicular magnetic field quenches the kinetic (Fermi) energy of an interacting two-dimensional (2D) system of fermions, making them susceptible to the formation of a Wigner solid (WS) phase in which the charged carriers organize themselves in a periodic array in order to minimize their Coulomb repulsion energy. In low-disorder 2D electron systems confined to modulation-doped GaAs heterostructures, signatures of a magnetic-field-induced WS appear at low temperatures and very small Landau level filling factors ($ν\simeq1/5$). In dilute GaAs 2D \textit{hole} systems, on the other hand, thanks to the larger hole effective mass and the ensuing Landau level mixing, the WS forms at relatively higher fillings ($ν\simeq1/3$). Here we report our measurements of the fundamental temperature vs. filling phase diagram for the 2D holes' WS-liquid \textit{thermal melting}. Moreover, via changing the 2D hole density, we also probe their Landau level mixing vs. filling WS-liquid \textit{quantum melting} phase diagram. We find our data to be in good agreement with the results of very recent calculations, although intriguing subtleties remain.
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Submitted 12 June, 2020;
originally announced June 2020.
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Working principles of do**-well structures for high-mobility two-dimensional electron systems
Authors:
Yoon Jang Chung,
K. A. Villegas Rosales,
K. W. Baldwin,
K. W. West,
M. Shayegan,
L. N. Pfeiffer
Abstract:
Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation do**, where the ionized dopants are physically separated from the 2DES channel. The do**-well structure augments modulation do** by providing additiona…
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Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation do**, where the ionized dopants are physically separated from the 2DES channel. The do**-well structure augments modulation do** by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the do**-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from do** wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the do** well can be varied to tune the properties of the 2DES.
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Submitted 18 April, 2020;
originally announced April 2020.
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Interference measurements of non-Abelian e/4 & Abelian e/2 quasiparticle braiding
Authors:
R. L. Willett,
K. Shtengel,
C. Nayak,
L. N. Pfeiffer,
Y. J. Chung,
M. L. Peabody,
K. W. Baldwin,
K. W. West,
.
Abstract:
The quantum Hall states at filling factors $ν=5/2$ and $7/2$ are expected to have Abelian charge $e/2$ quasiparticles and non-Abelian charge $e/4$ quasiparticles. The non-Abelian statistics of the latter has been predicted to display a striking interferometric signature, the even-odd effect. By measuring resistance oscillations as a function of magnetic field in Fabry-Pérot interferometers using n…
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The quantum Hall states at filling factors $ν=5/2$ and $7/2$ are expected to have Abelian charge $e/2$ quasiparticles and non-Abelian charge $e/4$ quasiparticles. The non-Abelian statistics of the latter has been predicted to display a striking interferometric signature, the even-odd effect. By measuring resistance oscillations as a function of magnetic field in Fabry-Pérot interferometers using new high purity heterostructures, we for the first time report experimental evidence for the non-Abelian nature of excitations at $ν=7/2$. At both $ν=5/2$ and $7/2$ we also examine, for the first time, the fermion parity, a topological quantum number of an even number of non-Abelian quasiparticles. The phase of observed $e/4$ oscillations is reproducible and stable over long times (hours) near both filling factors, indicating stability of the fermion parity. At both fractions, when phase fluctuations are observed, they are predominantly $π$ phase flips, consistent with either fermion parity change or change in the number of the enclosed $e/4$ quasiparticles. We also examine lower-frequency oscillations attributable to Abelian interference processes in both states. Taken together, these results constitute new evidence for the non-Abelian nature of $e/4$ quasiparticles; the observed life-time of their combined fermion parity further strengthens the case for their utility for topological quantum computation.
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Submitted 7 March, 2023; v1 submitted 24 May, 2019;
originally announced May 2019.
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Quantum Hall stripes in high-density GaAs/AlGaAs quantum wells
Authors:
X. Fu,
Q. Shi,
M. A. Zudov,
Y. J. Chung,
K. W. Baldwin,
L. N. Pfeiffer,
K. W. West
Abstract:
We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left < 1\bar{1}0 \right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along…
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We report on quantum Hall stripes (QHSs) formed in higher Landau levels of GaAs/AlGaAs quantum wells with high carrier density ($n_e > 4 \times 10^{11}$ cm$^{-2}$) which is expected to favor QHS orientation along unconventional $\left < 1\bar{1}0 \right >$ crystal axis and along the in-plane magnetic field $B_{||}$. Surprisingly, we find that at $B_{||} = 0$ QHSs in our samples are aligned along $\left < 110 \right >$ direction and can be reoriented only perpendicular to $B_{||}$. These findings suggest that high density alone is not a decisive factor for either abnormal native QHS orientation or alignment with respect to $B_{||}$, while quantum confinement of the 2DEG likely plays an important role.
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Submitted 5 April, 2019;
originally announced April 2019.
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Spatial Map** of Local Density Variations in Two-dimensional Electron Systems Using Scanning Photoluminescence
Authors:
Yoon Jang Chung,
Kirk W. Baldwin,
Kenneth W. West,
Nicholas Haug,
Johannes van de Wetering,
Mansour Shayegan,
Loren N. Pfeiffer
Abstract:
We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the observation of the expected density gradient in a high-quality GaAs quantum well sample that was not rotated during the molecular beam epitaxy of its spacer layer. I…
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We have developed a scanning photoluminescence technique that can directly map out the local two-dimensional electron density with a relative accuracy of $\sim2.2\times10^8$ cm$^{-2}$. The validity of this approach is confirmed by the observation of the expected density gradient in a high-quality GaAs quantum well sample that was not rotated during the molecular beam epitaxy of its spacer layer. In addition to this global variation in electron density, we observe local density fluctuations across the sample. These random density fluctuations are also seen in samples that were continuously rotated during growth, and we attribute them to residual space charges at the substrate-epitaxy interface. This is corroborated by the fact that the average magnitude of density fluctuations is increased to $\sim9\times10^{9}$ cm$^{-2}$ from $\sim1.2\times10^9$ cm$^{-2}$ when the buffer layer between the substrate and the quantum well is decreased by a factor of seven. Our data provide direct evidence for local density inhomogeneities even in very high-quality two-dimensional carrier systems.
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Submitted 27 March, 2019;
originally announced March 2019.
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Unconventional anisotropic even-denominator fractional quantum Hall state in a system with mass anisotropy
Authors:
Md. Shafayat Hossain,
Meng K. Ma,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
The fractional quantum Hall state (FQHS) observed at a half-filled Landau level in an interacting two-dimensional electron system (2DES) is among the most exotic states of matter as its quasiparticles are expected to be Majoranas with non-Abelian statistics. We demonstrate here the unexpected presence of such a state in a novel 2DES with a strong band-mass anisotropy. The FQHS we observe has unusu…
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The fractional quantum Hall state (FQHS) observed at a half-filled Landau level in an interacting two-dimensional electron system (2DES) is among the most exotic states of matter as its quasiparticles are expected to be Majoranas with non-Abelian statistics. We demonstrate here the unexpected presence of such a state in a novel 2DES with a strong band-mass anisotropy. The FQHS we observe has unusual characteristics. While its Hall resistance is well-quantized at low temperatures, it exhibits highly-anisotropic in-plane transport resembling compressible stripe/nematic charge-density-wave phases. More striking, the anisotropy sets in suddenly below a critical temperature, suggesting a finite-temperature phase transition. Our observations highlight how anisotropy modifies the many-body phases of a 2DES, and should further fuel the discussion surrounding the enigmatic even-denominator FQHS.
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Submitted 16 November, 2018;
originally announced November 2018.
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Anomalous coupling between magnetic and nematic orders in quantum Hall systems
Authors:
Md. Shafayat Hossain,
M. A. Mueed,
Meng K. Ma,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
The interplay between different orders is of fundamental importance in physics. The spontaneous, symmetry-breaking charge order, responsible for the stripe or the nematic phase, has been of great interest in many contexts where strong correlations are present, such as high-temperature superconductivity and quantum Hall effect. In this article we show the unexpected result that in an interacting tw…
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The interplay between different orders is of fundamental importance in physics. The spontaneous, symmetry-breaking charge order, responsible for the stripe or the nematic phase, has been of great interest in many contexts where strong correlations are present, such as high-temperature superconductivity and quantum Hall effect. In this article we show the unexpected result that in an interacting two-dimensional electron system, the robustness of the nematic phase, which represents an order in the charge degree of freedom, not only depends on the orbital index of the topmost, half-filled Landau level, but it is also strongly correlated with the magnetic order of the system. Intriguingly, when the system is fully magnetized, the nematic phase is particularly robust and persists to much higher temperatures compared to the nematic phases observed previously in quantum Hall systems. Our results give fundamental new insight into the role of magnetization in stabilizing the nematic phase, while also providing a new knob with which it can be effectively tuned.
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Submitted 13 August, 2018;
originally announced August 2018.
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Multivalley two-dimensional electron system in an AlAs quantum well with mobility exceeding $2\times10^6$ cm$^{2}$V$^{-1}$s$^{-1}$
Authors:
Yoon Jang Chung,
K. A. Villegas Rosales,
H. Deng,
K. W. Baldwin,
K. W. West,
M. Shayegan,
L. N. Pfeiffer
Abstract:
Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present exciting opportunities for both pragmatic and fundamental research alike because not only are they a platform for valleytronic devices, but they also provide a to…
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Degenerate conduction-band minima, or `valleys', in materials such as Si, AlAs, graphene, and MoS$_2$ allow them to host two-dimensional electron systems (2DESs) that can access a valley degree of freedom. These multivalley 2DESs present exciting opportunities for both pragmatic and fundamental research alike because not only are they a platform for valleytronic devices, but they also provide a tool to tune and investigate the properties of complex many-body ground states. Here, we report ultra-high quality, modulation doped AlAs quantum wells containing 2DESs that occupy two anisotropic valleys and have electron mobilities peaking at $2.4\times10^6$ cm$^{2}$V$^{-1}$s$^{-1}$ at a density of $2.2\times10^{11}$ cm$^{-2}$. This is more than an order of magnitude improvement in mobility over previous results. The unprecedented quality of our samples is demonstrated by magneto-transport data that show high-order fractional quantum Hall minima up to the Landau level filling $ν=8/17$, and even the elusive $ν=1/5$ quantum Hall state.
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Submitted 30 July, 2018;
originally announced July 2018.
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Surface segregation and the Al problem in GaAs quantum wells
Authors:
Yoon Jang Chung,
K. W. Baldwin,
K. W. West,
M. Shayegan,
L. N. Pfeiffer
Abstract:
Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped Al$_x$Ga$_{1-x}$As/GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition c…
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Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped Al$_x$Ga$_{1-x}$As/GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the Al$_x$Ga$_{1-x}$As barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the Al$_x$Ga$_{1-x}$As barrier beneath the QW is increased, which we attribute to the surface segregation of Oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking.
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Submitted 11 April, 2018;
originally announced April 2018.
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Design rules for modulation-doped AlAs quantum wells
Authors:
Yoon Jang Chung,
K. W. Baldwin,
K. W. West,
D. Kamburov,
M. Shayegan,
L. N. Pfeiffer
Abstract:
Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic transport. Indeed, a plethora of phenomena unseen in other 2DESs have been observed over the past decade. However, a foundation for sample design is still lacking f…
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Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic transport. Indeed, a plethora of phenomena unseen in other 2DESs have been observed over the past decade. However, a foundation for sample design is still lacking for AlAs 2DESs, limiting the means to achieve optimal quality samples. Here we present a systematic study on the fabrication of modulation-doped AlAs and GaAs QWs over a wide range of AlxGa1-xAs barrier alloy compositions. Our data indicate clear similarities in modulation do** mechanisms for AlAs and GaAs, and provide guidelines for the fabrication of very high quality AlAs 2DESs. We highlight the unprecedented quality of the fabricated AlAs samples by presenting the magnetotransport data for low density (~1X1011 cm2) AlAs 2DESs that exhibit high-order fractional quantum Hall signatures.
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Submitted 18 June, 2021; v1 submitted 27 July, 2017;
originally announced July 2017.
