Showing 1–50 of 129 results for author: Chung, Y

Origin of anomalous magnetotransport in kagome superconductors AV$_{3}$Sb$_{5}$ (A=K,Rb,Cs)

Authors: A. E. Koshelev, R. Chapai, D. Y. Chung, J. F. Mitchell, U. Welp

Abstract: Multiple anomalous features in electronic spectra of metals with kagome lattice structure -- van Hove singularities, Dirac points, and flat bands -- imply that materials containing this structural motif may lie at a nexus of topological and correlated electron physics. Due to the prospects of such exceptional electronic behavior, the recent discovery of superconductivity coexisting with charge-den… ▽ More Multiple anomalous features in electronic spectra of metals with kagome lattice structure -- van Hove singularities, Dirac points, and flat bands -- imply that materials containing this structural motif may lie at a nexus of topological and correlated electron physics. Due to the prospects of such exceptional electronic behavior, the recent discovery of superconductivity coexisting with charge-density wave (CDW) order in the layered kagome metals AV$_{3}$Sb$_{5}$ (A=K,Rb,Cs) has attracted considerable attention. Notably, these kagome metals express unconventional magnetotransport behavior, including a linear-in-H diagonal resistivity at low fields, and an even more peculiar, nonmonotonic sign-changing behavior of the Hall resistivity, which has been speculated to arise from a chiral CDW. We argue here that this unusual magnetotransport derives not from such unconventional phenomena, but rather from the unique fermiology of the AV$_{3}$Sb$_{5}$ materials. Specifically, it is caused by a large, concave hexagonal Fermi surface sheet formed in the close proximity to the van Hove singularities, which is backfolded into a small hexagonal sheet and two large triangular sheets in the CDW state. We introduce a model of the electronic structure of these Fermi surface sheets that allows for a full analytical treatment within Boltzmann kinetic theory and that enables semi-quantitative fits of our transport data. Specifically, we find that the anomalous magnetotransport behavior is caused by the confluence of strong reduction of the Fermi velocity near the van Hove singularities located near the vertices of the hexagonal sheet and sharp corners in Fermi surface generated by the CDW reconstruction. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Comments: 36 pages, 15 figures, Subm. Phys. Rev. B

Noise Correlations in a 1D Silicon Spin Qubit Array

Authors: M. B. Donnelly, J. Rowlands, L. Kranz, Y. L. Hsueh, Y. Chung, A. V. Timofeev, H. Geng, P. Singh-Gregory, S. K. Gorman, J. G. Keizer, R. Rahman, M. Y. Simmons

Abstract: Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poiso… ▽ More Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors. The recent discovery of spatially dependent correlated noise in multi-qubit architectures of superconducting qubits arising from the impact of cosmic radiation and high-energy particles giving rise to quasiparticle poisoning within the substrate has led to intense investigations of mitigation strategies to address this. In contrast correlated noise in semiconductor spin qubits as a function of distance has not been reported to date. Here we report the magnitude, frequency and spatial dependence of noise correlations between four silicon quantum dot pairs as a function of inter-dot distance at frequencies from 0.3mHz to 1mHz. We find the magnitude of charge noise correlations, quantified by the magnitude square coherence $C_{xy}$, are significantly suppressed from $>0.5$ to $<0.1$ as the inter-dot distance increases from 75nm to 300nm. Using an analytical model we confirm that, in contrast to superconducting qubits, the dominant source of correlated noise arises from low frequency charge noise from the presence of two level fluctuators (TLFs) at the native silicon-silicon dioxide surface. Knowing this, we conclude with an important and timely discussion of charge noise mitigation strategies. △ Less

Submitted 6 May, 2024; originally announced May 2024.

Comments: 9 pages, 4 figures, 1 table

Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold

Authors: Ian Thorvaldson, Dean Poulos, Christian M. Moehle, Saiful H. Misha, Hermann Edlbauer, Jonathan Reiner, Helen Geng, Benoit Voisin, Michael T. Jones, Matthew B. Donnelly, Luis F. Pena, Charles D. Hill, Casey R. Myers, Joris G. Keizer, Yousun Chung, Samuel K. Gorman, Ludwik Kranz, Michelle Y. Simmons

Abstract: Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spi… ▽ More Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit gates above the fault-tolerant threshold and entanglement of up to three qubits. However, maintaining high fidelity operations while executing multi-qubit algorithms has remained elusive, only being achieved for two spin qubits to date due to the small qubit size, which makes it difficult to control qubits without creating crosstalk errors. Here, we use a four-qubit silicon processor with every operation above the fault tolerant limit and demonstrate Grover's algorithm with a ~95% probability of finding the marked state, one of the most successful implementations to date. Our four-qubit processor is made of three phosphorus atoms and one electron spin precision-patterned into 1.5 nm${}^2$ isotopically pure silicon. The strong resulting confinement potential, without additional confinement gates that can increase cross-talk, leverages the benefits of having both electron and phosphorus nuclear spins. Significantly, the all-to-all connectivity of the nuclear spins provided by the hyperfine interaction not only allows for efficient multi-qubit operations, but also provides individual qubit addressability. Together with the long coherence times of the nuclear and electron spins, this results in all four single qubit fidelities above 99.9% and controlled-Z gates between all pairs of nuclear spins above 99% fidelity. The high control fidelities, combined with >99% fidelity readout of all nuclear spins, allows for the creation of a three-qubit Greenberger-Horne-Zeilinger (GHZ) state with 96.2% fidelity, the highest reported for semiconductor spin qubits so far. Such nuclear spin registers can be coupled via electron exchange, establishing a path for larger scale fault-tolerant quantum processors. △ Less

Submitted 12 April, 2024; originally announced April 2024.

Comments: 16 pages, 9 figures, 3 tables

Origin of pinning disorder in magnetic-field-induced Wigner solids

Authors: Matthew L. Freeman, P. T. Madathil, L. N. Pfeiffer, K. W. Baldwin, Y. J. Chung, R. Winkler, M. Shayegan, L. W. Engel

Abstract: At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown.… ▽ More At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here we present a study of the pinning mode resonance in the low-$ν$ Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths, $d$. The pinning mode frequencies,$f_p$, decrease strongly as $d$ increases, with the widest well exhibiting $f_p$ as low as $\simeq$35 MHz. The amount of reduction of \fp\ with increasing $d$ can be explained remarkably well by tails of the wave function im**ing into the alloy-disordered Al$_x$Ga$_{1-x}$As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well. △ Less

Submitted 10 April, 2024; originally announced April 2024.

Comments: accepted for publication in Phys Rev. Lett. as editors' suggestion

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Authors: P. T. Madathil, C. Wang, S. K. Singh, A. Gupta, K. A. Villegas Rosales, Y. J. Chung, K. W. West, K. W. Baldwin, L. N. Pfeiffer, L. W. Engel, M. Shayegan

Abstract: Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's mos… ▽ More Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's most fundamental parameters, namely the energy gap that determines its low-temperature conductivity, in record-mobility, ultra-high-purity, two-dimensional electrons confined to GaAs quantum wells. The WC domains in these samples contain $\simeq$ 1000 electrons. The measured gaps are a factor of three larger than previously reported for lower quality samples, and agree remarkably well with values predicted for the lowest-energy, intrinsic, hyper-corelated bubble defects in a WC made of flux-electron composite fermions, rather than bare electrons. The agreement is particularly noteworthy, given that the calculations are done for disorder-free composite fermion WCs, and there are no adjustable parameters. The results reflect the exceptionally high quality of the samples, and suggest that composite fermion WCs are indeed more stable compared to their electron counterparts. △ Less

Submitted 12 March, 2024; originally announced March 2024.

Journal ref: Phys. Rev. Lett. 132, 096502 (2024)

Anomalous acousto-current within the quantum Hall plateaus

Authors: Renfei Wang, Xiao Liu, Mengmeng Wu, Yoon Jang Chung, Adbhut Gupta, Kirk W. Baldwin, Mansour Shayegan, Loren Pfeiffer, Xi Lin, Yang Liu

Abstract: We systematically study the acousto-current of two-dimensional electron systems in the integer and fractional quantum Hall regimes using surface acoustic waves. We are able to separate the co-existing acoustic scattering and drag, when phonons induce drag current and tune the electron conductivity, respectively. At large acoustic power, the drag current is finite when the system is compressible an… ▽ More We systematically study the acousto-current of two-dimensional electron systems in the integer and fractional quantum Hall regimes using surface acoustic waves. We are able to separate the co-existing acoustic scattering and drag, when phonons induce drag current and tune the electron conductivity, respectively. At large acoustic power, the drag current is finite when the system is compressible and exhibits minima when incompressible quantum Hall effects appear. Surprisingly, it exhibits anomalously large bipolar spikes within the quantum Hall plateaus while it vanishes linearly with reduced acoustic power at compressible phases. The current peaks reverse their polarity at the two flanks of exact integer or fractional fillings, consistent with the opposite electric charge of the quasiparticle/quasihole. △ Less

Submitted 22 March, 2024; v1 submitted 26 February, 2024; originally announced February 2024.

Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system

Authors: P. T. Madathil, K. A. Villegas Rosales, Y. J. Chung, K. W. West, K. W. Baldwin, L. N. Pfeiffer, L. W. Engel, M. Shayegan

Abstract: In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics… ▽ More In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics. We report here, measurements on an ultra-low-disorder, dilute 2DES, confined to a GaAs quantum well. In the $ν< 1/5$ range, superimposed on a highly-insulating longitudinal resistance, the 2DES exhibits a develo** fractional quantum Hall state at $ν=1/7$, attesting to its exceptional high quality, and dominance of electron-electron interaction in the low filling regime. In the nearby insulating phases, we observe remarkable non-linear \textit{I-V} and noise characteristics as a function of increasing current, with current thresholds delineating three distinct phases of the WS: a pinned phase (P1) with very small noise, a second phase (P2) in which $dV/dI$ fluctuates between positive and negative values and is accompanied by very high noise, and a third phase (P3) where $dV/dI$ is nearly constant and small, and noise is about an order of magnitude lower than in P2. In the depinned (P2 and P3) phases, the noise spectrum also reveals well-defined peaks at frequencies that vary linearly with the applied current, suggestive of washboard frequencies. We discuss the data in light of a recent theory that proposes different dynamic phases for a driven WS. △ Less

Submitted 24 January, 2024; originally announced January 2024.

Journal ref: Phys. Rev. Lett. 131, 236501 (2023)

Extended Kohler's Rule of Magnetoresistance in TaCo$_2$Te$_2$

Authors: Samuel Pate, Bowen Chen, Bing Shen, Kezhen Li, Xiuquan Zhou, Duck Young Chung, Ralu Divan, Mercouri G. Kanatzidis, Ulrich Welp, Wai-Kwong Kwok, Zhi-Li Xiao

Abstract: TaCo$_2$Te$_2$ is recently reported to be an air-stable, high mobility Van der Waals material with probable magnetic order. Here we investigate the scaling behavior of its magnetoresistance. We measured both the longitudinal ($ρ_{xx}$) and Hall ($ρ_{xy}$) magnetoresistivities of TaCo$_2$Te$_2$ crystals in magnetic fields parallel to the c-axis and found that the magnetoresistance violates the Kohl… ▽ More TaCo$_2$Te$_2$ is recently reported to be an air-stable, high mobility Van der Waals material with probable magnetic order. Here we investigate the scaling behavior of its magnetoresistance. We measured both the longitudinal ($ρ_{xx}$) and Hall ($ρ_{xy}$) magnetoresistivities of TaCo$_2$Te$_2$ crystals in magnetic fields parallel to the c-axis and found that the magnetoresistance violates the Kohler's rule $MR \sim f[H/ρ_0]$ while obeying the extended Kohler's rule $MR \sim f[H/(n_Tρ_0)]$, where $MR \sim [ρ_{xx}(H)-ρ_0]/ρ_0$, $H$ is the magnetic field, $n_T$ is a thermal factor, $ρ_{xx}(H)$ and $ρ_0$ are the resistivities at $H$ and zero field, respectively. While deviating from those of the densities of electrons ($n_e$) and holes ($n_h$) obtained from the two-band model analysis of the magnetoconductivities, the temperature dependence of $n_T$ is close to that of the Hall carrier densities $n_H$ calculated from the slopes of $ρ_{xy}(H)$ curves at low magnetic fields, providing a new way to obtain the thermal factor in the extended Kohler's rule. △ Less

Submitted 9 December, 2023; originally announced December 2023.

Journal ref: Phys. Rev. B 109, 035129 (2024)

Fractional Quantum Hall State at Filling Factor $ν=1/4$ in Ultra-High-Quality GaAs 2D Hole Systems

Authors: Chengyu Wang, A. Gupta, S. K. Singh, P. T. Madathil, Y. J. Chung, L. N. Pfeiffer, K. W. Baldwin, R. Winkler, M. Shayegan

Abstract: Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors $ν<1$. Here we report evidence for an even-denominator FQHS at $ν=1/4$ in ultra-high-quality… ▽ More Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors $ν<1$. Here we report evidence for an even-denominator FQHS at $ν=1/4$ in ultra-high-quality two-dimensional hole systems confined to modulation-doped GaAs quantum wells. We observe a deep minimum in the longitudinal resistance at $ν=1/4$, superimposed on a highly insulating background, suggesting a close competition between the $ν=1/4$ FQHS and the magnetic-field-induced, pinned Wigner solid states. Our experimental observations are consistent with the very recent theoretical calculations which predict that substantial Landau level mixing, caused by the large hole effective mass, can induce composite fermion pairing and lead to a non-Abelian FQHS at $ν=1/4$. Our results demonstrate that Landau level mixing can provide a very potent means for tuning the interaction between composite fermions and creating new non-Abelian FQHSs. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Comments: 7+9 pages, 3+4 figures

Journal ref: Phys. Rev. Lett. 131, 266502 (2023)

Metastable Charge Distribution Between Degenerate Landau Levels

Authors: Wenlu Lin, Xing Fan, Lili Zhao, Yoon Jang Chung, Adbhut Gupta, Kirk W. Baldwin, Loren Pfeiffer, Hong Lu, Yang Liu

Abstract: We study two dimensional electron systems confined in wide quantum wells whose subband separation is comparable with the Zeeman energy. Two N = 0 Landau levels from different subbands and with opposite spins are pinned in energy when they cross each other and electrons can freely transfer between them. When the disorder is strong, we observe clear hysteresis in our data corresponding to instabilit… ▽ More We study two dimensional electron systems confined in wide quantum wells whose subband separation is comparable with the Zeeman energy. Two N = 0 Landau levels from different subbands and with opposite spins are pinned in energy when they cross each other and electrons can freely transfer between them. When the disorder is strong, we observe clear hysteresis in our data corresponding to instability of the electron distribution in the two crossing levels. When the intra-layer interaction dominates, multiple minima appear when a Landau level is 1/3 or 2/3 filled and fractional quantum hall effect can be stabilized. △ Less

Submitted 26 February, 2024; v1 submitted 8 September, 2023; originally announced September 2023.

Probing quantum phases in ultra-high-mobility two-dimensional electron systems using surface acoustic waves

Authors: Mengmeng Wu, Xiao Liu, Renfei Wang, Yoon Jang Chung, Adbhut Gupta, Kirk W. Baldwin, Loren Pfeiffer, Xi Lin, Yang Liu

Abstract: Transport measurement, which applies an electric field and studies the migration of charged particles, i.e. the current, is the most widely used technique in condensed matter studies. It is generally assumed that the quantum phase remains unchanged when it hosts a sufficiently small probing current, which is, surprisingly, rarely examined experimentally. In this work, we study the ultra-high mobil… ▽ More Transport measurement, which applies an electric field and studies the migration of charged particles, i.e. the current, is the most widely used technique in condensed matter studies. It is generally assumed that the quantum phase remains unchanged when it hosts a sufficiently small probing current, which is, surprisingly, rarely examined experimentally. In this work, we study the ultra-high mobility two-dimensional electron system using a propagating surface acoustic wave, whose traveling speed is affected by the electrons' compressibility. The acoustic power used in our study is several orders of magnitude lower than previous reports, and its induced perturbation to the system is smaller than the transport current. Therefore we are able to observe the quantum phases become more incompressible when hosting a perturbative current. △ Less

Submitted 31 January, 2024; v1 submitted 5 July, 2023; originally announced July 2023.

Comments: 10 pages, 10 figures

Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions

Authors: P. T. Madathil, K. A. Villegas Rosales, C. T. Tai, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimental… ▽ More Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimentally, scaling has been investigated via measuring the temperature dependence of plateau-to-plateau transitions between the integer quantum Hall states (IQHSs), yielding a critical exponent $κ\simeq 0.42$. Here we report scaling measurements in the fractional quantum Hall state (FQHS) regime where interaction plays a dominant role. Our study is partly motivated by recent calculations, based on the composite fermion theory, that suggest identical critical exponents in both IQHS and FQHS cases to the extent that the interaction between composite fermions is negligible. The samples used in our experiments are two-dimensional electron systems confined to GaAs quantum wells of exceptionally high quality. We find that $κ$ varies for transitions between different FQHSs observed on the flanks of Landau level filling factor $ν=1/2$, and has a value close to that reported for the IQHS transitions only for a limited number of transitions between high-order FQHSs with intermediate strength. We discuss possible origins of the non-universal $κ$ observed in our experiments. △ Less

Submitted 6 June, 2023; originally announced June 2023.

Journal ref: Phys. Rev. Lett. 130, 226503 (2023)

Two-Dimensional Short-Range Chemical Ordering in Ba1-xNaxFe2As2

Authors: R. Stadel, R. DeRose, K. M. Taddei, M. J. Krogstad, P. Upreti, Z. Islam, D. Phelan, D. Y. Chung, R. Osborn, S. Rosenkranz, O. Chmaissem

Abstract: A true understanding of the properties of pnictide superconductors require the development of high-quality materials and performing measurements designed to unravel their intrinsic properties and short-range nematic correlations which are often obscured by extrinsic effects such as poor crystallinity, inhomogeneity, domain formation and twinning. In this paper, we report the systematic growth of h… ▽ More A true understanding of the properties of pnictide superconductors require the development of high-quality materials and performing measurements designed to unravel their intrinsic properties and short-range nematic correlations which are often obscured by extrinsic effects such as poor crystallinity, inhomogeneity, domain formation and twinning. In this paper, we report the systematic growth of high-quality Na-substituted BaFe2As2 single crystals and their characterization using pulsed-magnetic fields x-ray diffraction and x-ray diffuse scattering. Analysis of the properties and compositions of the highest quality crystals show that their actual Na stoichiometry is about 50-60% of the nominal content and that the targeted production of crystals with specific compositions is accessible. We derived a reliable equation to estimate the Na stoichiometry based on the measured superconducting TC of these materials. Attempting to force spin reorientation and induce tetragonality, orthorhombic Ba1-xNaxFe2As2 single crystals subjected to out-of-plane magnetic fields up to 31.4T are found to exhibit strong in-plane magnetic anisotropy demonstrated by the insufficiency of such high fields in manipulating the relative population of their twinned domains or in suppressing the orthorhombic order. Broad x-ray diffuse intensity rods observed at temperatures between 30 K and 300 K uncover short-range structural correlations. Local structure modeling together with 3D-ΔPDF map** of real-space interatomic vectors show that the diffuse scattering arises from in-plane short-range chemical correlations of the Ba and Na atoms coupled with short-range atomic displacements within the same plane due to an effective size difference between the two atomic species. △ Less

Submitted 16 April, 2023; originally announced April 2023.

Highly-Anisotropic Even-Denominator Fractional Quantum Hall State in an Orbitally-Coupled Half-Filled Landau Level

Authors: Chengyu Wang, A. Gupta, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler, M. Shayegan

Abstract: The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the competition and interplay between the even-denominator FQHSs and other ground states, such as anisotropic phases and composite fermion Fermi seas. Here we report the… ▽ More The even-denominator fractional quantum Hall states (FQHSs) in half-filled Landau levels are generally believed to host non-Abelian quasiparticles and be of potential use in topological quantum computing. Of particular interest is the competition and interplay between the even-denominator FQHSs and other ground states, such as anisotropic phases and composite fermion Fermi seas. Here we report the observation of an even-denominator fractional quantum Hall state with highly-anisotropic in-plane transport coefficients at Landau level filling factor $ν=3/2$. We observe this state in an ultra-high-quality GaAs two-dimensional hole system when a large in-plane magnetic field is applied. By increasing the in-plane field, we observe a sharp transition from an isotropic composite fermion Fermi sea to an anisotropic even-denominator FQHS. Our data and calculations suggest that a unique feature of two-dimensional holes, namely the coupling between heavy-hole and light-hole states, combines different orbital components in the wavefunction of one Landau level, and leads to the emergence of a highly-anisotropic even-denominator fractional quantum Hall state. Our results demonstrate that the GaAs two-dimensional hole system is a unique platform for the exploration of exotic, many-body ground states. △ Less

Submitted 18 October, 2023; v1 submitted 29 March, 2023; originally announced March 2023.

Comments: 7+15 pages, 4+6 figures

Journal ref: Phys. Rev. Lett. 131, 056302 (2023)

Valley-tunable, even-denominator fractional quantum Hall state in the lowest Landau level of an anisotropic system

Authors: Md. Shafayat Hossain, M. K. Ma, Y. J. Chung, S. K. Singh, A. Gupta, K. W. West, K. W. Baldwin, L. N. Pfeiffer, R. Winkler, M. Shayegan

Abstract: Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($ν$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $ν=1/2$ in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band va… ▽ More Fractional quantum Hall states (FQHSs) at even-denominator Landau level filling factors ($ν$) are of prime interest as they are predicted to host exotic, topological states of matter. We report here the observation of a FQHS at $ν=1/2$ in a two-dimensional electron system of exceptionally high quality, confined to a wide AlAs quantum well, where the electrons can occupy multiple conduction-band valleys with an anisotropic effective mass. The anisotropy and multi-valley degree of freedom offer an unprecedented tunability of the $ν=1/2$ FQHS as we can control both the valley occupancy via the application of in-plane strain, and the ratio between the strengths of the short- and long-range Coulomb interaction by tilting the sample in the magnetic field to change the electron charge distribution. Thanks to this tunability, we observe phase transitions from a compressible Fermi liquid to an incompressible FQHS and then to an insulating phase as a function of tilt angle. We find that this evolution and the energy gap of the $ν=1/2$ FQHS depend strongly on valley occupancy. △ Less

Submitted 20 March, 2023; originally announced March 2023.

Journal ref: Phys. Rev. Lett. 130, 126301 (2023); Editor's suggestion

Observation of Electronic Modes in Open Cavity Resonator

Authors: Hwanchul Jung, Dongsung T. Park, Seokyeong Lee, Uh** Kim, Chanuk Yang, Jehyun Kim, V. Umansky, Dohun Kim, H. -S. Sim, Yunchul Chung, Hyoungsoon Choi, Hyung Kook Choi

Abstract: The resemblance between electrons and optical waves has strongly driven the advancement of mesoscopic physics. However, electron waves have yet to be understood in open cavity structures which have provided contemporary optics with rich insight towards non-Hermitian systems and complex interactions between resonance mode. Here, we report the realization of an open cavity resonator in a two-dimensi… ▽ More The resemblance between electrons and optical waves has strongly driven the advancement of mesoscopic physics. However, electron waves have yet to be understood in open cavity structures which have provided contemporary optics with rich insight towards non-Hermitian systems and complex interactions between resonance mode. Here, we report the realization of an open cavity resonator in a two-dimensional electronic system. We studied the resonant electron modes within the cavity and resolved the signatures of longitudinal and transverse quantization, showing that the modes are robust despite the openness of the cavity being highly open to the background continuum. The transverse modes were investigated by applying a controlled deformation to the cavity, and their spatial distributions were further analyzed using magnetoconductance measurements and numerical simulation. These results lay the groundwork to exploring electronic wavefunctions in the context of modern optical systems, such as the dielectric microcavity. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Journal ref: Nat Commun 14, 415 (2023)

Dynamic Response of Wigner Crystals

Authors: Lili Zhao, Wenlu Lin, Yoon Jang Chung, Adbhut Gupta, Kirk W. Baldwin, Loren N. Pfeiffer, Yang Liu

Abstract: The Wigner crystal, an ordered array of electrons, is one of the very first proposed many-body phases stabilized by the electron-electron interaction. This electron solid phase has been reported in ultra-clean two-dimensional electron systems at extremely low temperatures, where the Coulomb interaction dominants over the kinetic energy, disorder potential and thermal fluctuation. We closely examin… ▽ More The Wigner crystal, an ordered array of electrons, is one of the very first proposed many-body phases stabilized by the electron-electron interaction. This electron solid phase has been reported in ultra-clean two-dimensional electron systems at extremely low temperatures, where the Coulomb interaction dominants over the kinetic energy, disorder potential and thermal fluctuation. We closely examine this quantum phase with capacitance measurements where the device length-scale is comparable with the crystal's correlation length. The extraordinarily high performance of our technique makes it possible to quantitatively study the dynamic response of the Wigner crystal within the single crystal regime. Our result will greatly boost the study of this inscrutable electron solid. △ Less

Submitted 4 January, 2023; originally announced January 2023.

Unreliability of two-band model analysis of magnetoresistivities in unveiling temperature-driven Lifshitz transition

Authors: **g Xu, Yu Wang, Samuel E. Pate, Yanglin Zhu, Zhiqiang Mao, Xufeng Zhang, Xiuquan Zhou, Ulrich Welp, Wai-Kwong Kwok, Duck Young Chung, Mercouri G. Kanatzidis, Zhi-Li Xiao

Abstract: Recently, anomalies in the temperature dependences of the carrier density and/or mobility derived from analysis of the magnetoresistivities using the conventional two-band model have been used to unveil intriguing temperature-induced Lifshitz transitions in various materials. For instance, two temperature-driven Lifshitz transitions were inferred to exist in the Dirac nodal-line semimetal ZrSiSe,… ▽ More Recently, anomalies in the temperature dependences of the carrier density and/or mobility derived from analysis of the magnetoresistivities using the conventional two-band model have been used to unveil intriguing temperature-induced Lifshitz transitions in various materials. For instance, two temperature-driven Lifshitz transitions were inferred to exist in the Dirac nodal-line semimetal ZrSiSe, based on two-band model analysis of the Hall magnetoconductivities where the second band exhibits a change in the carrier type from holes to electrons when the temperature decreases below T = 106 K and a dip is observed in the mobility versus temperature curve at T = 80 K. Here, we revisit the experiments and two-band model analysis on ZrSiSe. We show that the anomalies in the second band may be spurious, because the first band dominates the Hall magnetoconductivities at T > 80 K, making the carrier type and mobility obtained for the second band from the two-band model analysis unreliable. That is, care must be taken in interpreting these anomalies as evidences for temperature-driven Lifshitz transitions. Our skepticism on the existence of such phase transitions in ZrSiSe is further supported by the validation of the Kohler's rule for magnetoresistances at temperatures below 180 K. This work showcases potential issues in interpreting anomalies in the temperature dependence of the carrier density and mobility derived from the analysis of magnetoconductivities or magnetoresistivities using the conventional two-band model. △ Less

Submitted 31 December, 2022; v1 submitted 23 December, 2022; originally announced December 2022.

Journal ref: Phys. Rev. B 107, 035104 (2023)

Fractional quantum Hall valley ferromagnetism in the extreme quantum limit

Authors: Md. Shafayat Hossain, M. K. Ma, Y. J. Chung, S. K. Singh, A. Gupta, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler, M. Shayegan

Abstract: Electrons' multiple quantum degrees of freedom can lead to rich physics, including a competition between various exotic ground states, as well as novel applications such as spintronics and valleytronics. Here we report magneto-transport experiments demonstrating how the valley degree of freedom impacts the fractional quantum states (FQHSs), and the related magnetic-flux-electron composite fermions… ▽ More Electrons' multiple quantum degrees of freedom can lead to rich physics, including a competition between various exotic ground states, as well as novel applications such as spintronics and valleytronics. Here we report magneto-transport experiments demonstrating how the valley degree of freedom impacts the fractional quantum states (FQHSs), and the related magnetic-flux-electron composite fermions (CFs), at very high magnetic fields in the extreme quantum limit when only the lowest Landau level is occupied. Unlike in other multivalley two-dimensional electron systems such as Si or monolayer graphene and transition-metal dichalcogenides, in our AlAs sample we can continuously tune the valley polarization via the application of in-situ strain. We find that the FQHSs remain exceptionally strong even as they make valley polarization transitions, revealing a surprisingly robust ferromagnetism of the FQHSs and the underlying CFs. Our observation implies that the CFs are strongly interacting in our system. We are also able to obtain a phase diagram for the FQHS and CF valley polarization in the extreme quantum limit as we monitor transitions of the FHQSs with different valley polarizations. △ Less

Submitted 17 November, 2022; originally announced November 2022.

Journal ref: Phys. Rev. B 106, L201303 (2022)

Robust Quantum Hall Ferromagnetism near a Gate-Tuned ν = 1 Landau Level Crossing

Authors: Meng K. Ma, Chengyu Wang, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler, M. Shayegan

Abstract: In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. We st… ▽ More In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is determined by the exchange energy and has skyrmions as its excitations. This is normally achieved via applying either hydrostatic pressure or uniaxial strain. We study here a very high-quality, low-density, two-dimensional hole system, confined to a 30-nm-wide (001) GaAs quantum well, in which the two lowest-energy Landau levels can be gate tuned to cross at and near filling factor $ν=1$. As we tune the field position of the crossing from one side of $ν=1$ to the other by changing the hole density, the energy gap for the quantum Hall state at $ν=1$ remains exceptionally large, and only shows a small dip near the crossing. The gap overall follows a $\sqrt{B}$ dependence, expected for the exchange energy. Our data are consistent with a robust quantum Hall ferromagnet as the ground state. △ Less

Submitted 9 November, 2022; originally announced November 2022.

Comments: 7+2 pages, 4+4 figures

Journal ref: Phys. Rev. Lett. 129, 196801 (2022)

3-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction

Authors: Matthew B. Donnelly, Joris G. Keizer, Yousun Chung, Michelle Y. Simmons

Abstract: A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit operation but limits device tunability using in-plane gate architectures, requiring vertically separated top-gates to control tunnelling within the device. In this… ▽ More A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit operation but limits device tunability using in-plane gate architectures, requiring vertically separated top-gates to control tunnelling within the device. In this paper we address control of the simplest tunnelling device in Si:P, the tunnel junction. Here we demonstrate that we can tune its conductance by using a vertically separated top-gate aligned with +-5nm precision to the junction. We show that a monolithic 3D epitaxial top-gate increases the capacitive coupling by a factor of 3 compared to in-plane gates, resulting in a tunnel barrier height tunability of 0-186meV. By combining multiple gated junctions in series we extend our monolithic 3D gating technology to implement nanoscale logic circuits including AND and OR gates. △ Less

Submitted 3 November, 2022; originally announced November 2022.

Journal ref: Nano Lett. 2021, 21, 23, 10092-10098

Superconducting properties and gap structure of the topological superconductor candidate Ti_(3)Sb

Authors: R. Chapai, M. P. Smylie, H. Hebbeker, D. Y. Chung, W. -K. Kwok, J. F. Mitchell, U. Welp

Abstract: We present a study of the superconducting properties of the candidate topological superconductor Ti_(3)Sb. Electrical transport measurements show zero resistance with a T_(c,onset) of ~ 5.9 K with a transition width ΔT_c~ 0.6 K. The superconducting phase boundaries as derived from magneto-transport and magnetic susceptibility measurements agree well. We estimate an upper critical field Bc2(0)~4.5… ▽ More We present a study of the superconducting properties of the candidate topological superconductor Ti_(3)Sb. Electrical transport measurements show zero resistance with a T_(c,onset) of ~ 5.9 K with a transition width ΔT_c~ 0.6 K. The superconducting phase boundaries as derived from magneto-transport and magnetic susceptibility measurements agree well. We estimate an upper critical field Bc2(0)~4.5 T. A Ginzburg-Landau (GL) analysis yields values of the coherence length and penetration depth of ζ = 6.2 nm and λ = 340 nm, respectively, and a GL parameter ~ 55, indicating extreme type-II behavior. Furthermore, we observed a step height in the specific heat (ΔC_e)/(γT_c )~1.61, a value larger than the Bardeen-Cooper-Schrieffer (BCS) value of 1.43, suggesting modest coupling. Measurements of the temperature dependence of the London penetration depth via the tunnel-diode oscillator (TDO) technique down to ~ 450 mK show a full superconducting gap, consistent with a conventional s-wave gap structure. △ Less

Submitted 31 October, 2022; originally announced November 2022.

Comments: 19 pages, 6 figures

Journal ref: Phys. Rev. B 107, 104504 (2023)

A Database of Ultrastable MOFs Reassembled from Stable Fragments with Machine Learning Models

Authors: Aditya Nandy, Shuwen Yue, Changhwan Oh, Chenru Duan, Gianmarco G. Terrones, Yongchul G. Chung, Heather J. Kulik

Abstract: High-throughput screening of large hypothetical databases of metal-organic frameworks (MOFs) can uncover new materials, but their stability in real-world applications is often unknown. We leverage community knowledge and machine learning (ML) models to identify MOFs that are thermally stable and stable upon activation. We separate these MOFs into their building blocks and recombine them to make a… ▽ More High-throughput screening of large hypothetical databases of metal-organic frameworks (MOFs) can uncover new materials, but their stability in real-world applications is often unknown. We leverage community knowledge and machine learning (ML) models to identify MOFs that are thermally stable and stable upon activation. We separate these MOFs into their building blocks and recombine them to make a new hypothetical MOF database of over 50,000 structures that samples orders of magnitude more connectivity nets and inorganic building blocks than prior databases. This database shows an order of magnitude enrichment of ultrastable MOF structures that are stable upon activation and more than one standard deviation more thermally stable than the average experimentally characterized MOF. For the nearly 10,000 ultrastable MOFs, we compute bulk elastic moduli to confirm these materials have good mechanical stability, and we report methane deliverable capacities. Our work identifies privileged metal nodes in ultrastable MOFs that optimize gas storage and mechanical stability simultaneously. △ Less

Submitted 25 October, 2022; originally announced October 2022.

Even-Denominator Fractional Quantum Hall State at Filling Factor ν = 3/4

Authors: Chengyu Wang, A. Gupta, S. K Singh, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, R. Winkler, M. Shayegan

Abstract: Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasi-particles are generally believed to obey non-Abelian statistics and be of p… ▽ More Fractional quantum Hall states (FQHSs) exemplify exotic phases of low-disorder two-dimensional (2D) electron systems when electron-electron interaction dominates over the thermal and kinetic energies. Particularly intriguing among the FQHSs are those observed at even-denominator Landau level filling factors, as their quasi-particles are generally believed to obey non-Abelian statistics and be of potential use in topological quantum computing. Such states, however, are very rare and fragile, and are typically observed in the excited Landau level of 2D electron systems with the lowest amount of disorder. Here we report the observation of a new and unexpected even-denominator FQHS at filling factor ν = 3/4 in a GaAs 2D hole system with an exceptionally high quality (mobility). Our magneto-transport measurements reveal a strong minimum in the longitudinal resistance at ν = 3/4, accompanied by a develo** Hall plateau centered at (h/e2)/(3/4). This even-denominator FQHS is very unusual as it is observed in the lowest Landau level and in a 2D hole system. While its origin is unclear, it is likely a non-Abelian state, emerging from the residual interaction between composite fermions. △ Less

Submitted 6 October, 2022; originally announced October 2022.

Comments: 6+6 pages, 3+3 figures; featured in Physics; featured as Editor's suggestion

Journal ref: Phys. Rev. Lett. 129, 156801 (2022)

Magnetic Breakdown and Topology in the Kagome Superconductor CsV3Sb5 under High Magnetic Field

Authors: Ramakanta Chapai, Maxime Leroux, Vincent Oliviero, David Vignolles, M. P. Smylie, D. Y. Chung, M. G. Kanatzidis, W. -K. Kwok, J. F. Mitchell, Ulrich Welp

Abstract: The recently discovered layered Kagome metals of composition AV3Sb5 (A = K, Rb, Cs) exhibit a complex interplay among superconductivity, charge density wave order, topologically non-trivial electronic band structure and geometrical frustration. Here, we probe the electronic band structure underlying these exotic correlated electronic states in CsV3Sb5 with quantum oscillation measurements in pulse… ▽ More The recently discovered layered Kagome metals of composition AV3Sb5 (A = K, Rb, Cs) exhibit a complex interplay among superconductivity, charge density wave order, topologically non-trivial electronic band structure and geometrical frustration. Here, we probe the electronic band structure underlying these exotic correlated electronic states in CsV3Sb5 with quantum oscillation measurements in pulsed fields up to 86 T. The high-field data reveal a sequence of magnetic breakdown orbits that allows the construction of a model for the folded Fermi surface of CsV3Sb5. The dominant features are large triangular Fermi surface sheets that cover almost half of the folded Brillouin zone that have not yet been detected in angle resolved photoemission spectroscopy (ARPES). These sheets display pronounced nesting at the charge density wave (CDW) vectors, which may stabilize the CDW state. The Berry phases of the electron orbits have been deduced from Landau level fan diagrams near the quantum limit without the need for extrapolations, thereby unambiguously establishing the non-trivial topological character of several electron bands in this Kagome lattice superconductor. △ Less

Submitted 22 August, 2022; v1 submitted 10 August, 2022; originally announced August 2022.

Comments: 28 pages, 10 figures, 1 table, Supplementary Materials added

Report number: https://doi.org/10.1103/PhysRevLett.130.126401

Journal ref: Phys. Rev. Lett. 130, 126401 (2023)

Spin and charge density waves in the quasi-one-dimensional KMn6Bi5

Authors: **-Ke Bao, Huibo Cao, Matthew J. Krogstad, Keith M. Taddei, Chenfei Shi, Shixun Cao, Saul H. Lapidus, Sander van Smaalen, Duck Young Chung, Mercouri G. Kanatzidis, Stephan Rosenkranz, Omar Chmaissem

Abstract: AMn6Bi5 materials (A = Na, K, Rb and Cs) consisting of unique Mn-cluster chains emerge as a new family of superconductors with the suppression of their antiferromagnetic (AFM) order under high pressures. Here, we report transverse incommensurate spin density waves (SDWs) for the Mn atoms with a propagating direction along the chain axes as a ground state for KMn6Bi5 by single crystal neutron diffr… ▽ More AMn6Bi5 materials (A = Na, K, Rb and Cs) consisting of unique Mn-cluster chains emerge as a new family of superconductors with the suppression of their antiferromagnetic (AFM) order under high pressures. Here, we report transverse incommensurate spin density waves (SDWs) for the Mn atoms with a propagating direction along the chain axes as a ground state for KMn6Bi5 by single crystal neutron diffraction. The SDWs have a refined amplitude of ~2.46 Bohr magnetons for the Mn atoms in the pentagons and ~0.29 Bohr magnetons with a large standard deviation for Mn atoms in the center between the pentagons. AFM dominate both the nearest-neighbor Mn-Mn interactions within the pentagon and next-nearest-neighbor Mn-Mn interactions out of the pentagon (along the propagating wave). The SDWs exhibit both local and itinerant characteristics probably formed by a cooperative interaction between local magnetic exchange and conduction electrons. A significant magnetoelastic effect during the AFM transition, especially along the chain direction, has been demonstrated by temperature-dependent x-ray powder diffraction. Single crystal x-ray diffraction below the AFM transition revealed satellite peaks originating from charge density waves along the chain direction with a q-vector twice as large as the SDW one, pointing to a strong real space coupling between them. Our work not only manifests a fascinating interplay among spin, charge, lattice and one dimensionality to trigger intertwined orders in KMn6Bi5 but also provides important piece of information for the magnetic structure of the parent compound to understand the mechanism of superconductivity in this new family. △ Less

Submitted 4 August, 2022; originally announced August 2022.

Composite Fermion Mass

Authors: K. A. Villegas Rosales, P. T. Madathil, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental propert… ▽ More Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental property of a FQHS, namely its energy gap. We present here experimental measurements of $m_{CF}$ in ultra-high quality two-dimensional electron systems confined to GaAs quantum wells of varying thickness. An advantage of measuring $m_{CF}$ over gap measurements is that mass values are insensitive to disorder and are therefore ideal for comparison with theoretical calculations, especially for high-order FQHS. Our data reveal that $m_{CF}$ increases with increasing well width, reflecting a decrease in the energy gap as the electron layer becomes thicker and the in-plane Coulomb energy softens. Comparing our measured masses with available theoretical results, we find significant quantitative discrepancies, highlighting that more rigorous and accurate calculations are needed to explain the experimental data. △ Less

Submitted 16 July, 2022; originally announced July 2022.

Journal ref: Phys. Rev. B 106 L041301, (2022)

Anisotropic, two-dimensional, disordered Wigner solid

Authors: Md. S. Hossain, M. K. Ma, K. A. Villegas-Rosales, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: The interplay between the Fermi sea anisotropy, electron-electron interaction, and localization phenomena can give rise to exotic many-body phases. An exciting example is an anisotropic two-dimensional (2D) Wigner solid (WS), where electrons form an ordered array with an anisotropic lattice structure. Such a state has eluded experiments up to now as its realization is extremely demanding: First, a… ▽ More The interplay between the Fermi sea anisotropy, electron-electron interaction, and localization phenomena can give rise to exotic many-body phases. An exciting example is an anisotropic two-dimensional (2D) Wigner solid (WS), where electrons form an ordered array with an anisotropic lattice structure. Such a state has eluded experiments up to now as its realization is extremely demanding: First, a WS entails very low densities where the Coulomb interaction dominates over the kinetic (Fermi) energy. Attaining such low densities while kee** the disorder low is very challenging. Second, the low-density requirement has to be fulfilled in a material that hosts an anisotropic Fermi sea. Here, we report transport measurements in a clean (low-disorder) 2D electron system with anisotropic effective mass and Fermi sea. The data reveal that at extremely low electron densities, when the r_s parameter, the ratio of the Coulomb to the Fermi energy, exceeds 38, the current-voltage characteristics become strongly nonlinear at small dc biases. Several key features of the nonlinear characteristics, including their anisotropic voltage thresholds, are consistent with the formation of a disordered, anisotropic WS pinned by the ubiquitous disorder potential. △ Less

Submitted 13 July, 2022; originally announced July 2022.

Journal ref: Phys. Rev. Lett. 129, 036601 (2022)

Understanding limits to mobility in ultra-high-mobility GaAs two-dimensional electron systems: The quest for 100 million cm$^2$/Vs and beyond

Authors: Yoon Jang Chung, A. Gupta, K. W. Baldwin, K. W. West, M. Shayegan, L. N. Pfeiffer

Abstract: For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of success for GaAs 2DESs was continuous sample quality improvement, which enabled scattering-free transport over macroscopic length scales as well as the emergence of… ▽ More For several decades now, ultra-high-mobility GaAs two-dimensional electron systems (2DESs) have served as the hallmark platform for various branches of research in condensed matter physics. Fundamental to this long-standing history of success for GaAs 2DESs was continuous sample quality improvement, which enabled scattering-free transport over macroscopic length scales as well as the emergence of a diverse range of exotic many-body phenomena. While the recent breakthrough in the quality of GaAs 2DESs grown by molecular beam epitaxy is highly commendable in this context, it is also important and timely to establish an up-to-date understanding of what obstructs us from pushing the mobility limit even further. Here, we present mobility data taken at a temperature of 0.3 K for a wide variety of state-of-the-art GaAs 2DESs, exhibiting a maximum, world-record mobility of $μ\simeq57\times10^6$ cm$^2$/Vs at a 2DES density of $n=1.55\times10^{11}$ /cm$^2$. We also provide comprehensive analyses of the collective scattering mechanisms that can explain the results. Furthermore, based on our study, we discuss potential scenarios where GaAs 2DES mobility values exceeding $100\times10^6$ cm$^2$/Vs could be achieved. △ Less

Submitted 28 June, 2022; originally announced June 2022.

Comments: 11 pages, 4 figures

Journal ref: Phys. Rev. B 106, 075134 (2022)

Hole Mobility Calculation for Monolayer Molybdenum Tungsten Alloy Disulfide

Authors: Ming-Ting Wu, Cheng-Hsien Yang, Yun-Fang Chung, Kuan-Ting Chen, Shu-Tong Chang

Abstract: A simple band model using higher order non-parabolic effect was adopted for single layer molybdenum tungsten alloy disulfide (i.e., $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$). The first-principles method considering $2\times2$ supercell was used to study band structure of single layer alloy $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$ and a simple band (i.e., effective mass approximation model, E… ▽ More A simple band model using higher order non-parabolic effect was adopted for single layer molybdenum tungsten alloy disulfide (i.e., $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$). The first-principles method considering $2\times2$ supercell was used to study band structure of single layer alloy $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$ and a simple band (i.e., effective mass approximation model, EMA) model with higher order non-parabolic effect was used to fit the first-principle band structures in order to calculate corresponding the hole mobility. In addition, we investigate the alloy scattering effect on the hole mobility of $\mathrm{Mo}_{1-x}\mathrm{W}_x\mathrm{S}_2$. △ Less

Submitted 4 May, 2022; originally announced May 2022.

Journal ref: Journal of Nanoscience and Nanotechnology 20, 7175 (2020)

Band structure of molybdenum disulfide: from first principle to analytical band model

Authors: Cheng-Hsien Yang, Yun-Fang Chung, Yen-Shuo Su, Kuan-Ting Chen, Yi-Sheng Huang, Shu-Tong Chang

Abstract: A simple band model such as the effective mass approximation (EMA) can be used to quickly obtain the lower-energy region for the band structure of monolayer molybdenum disulfide. But the EMA band model cannot give the correct description for the band structure in the higher-energy region. To address this major issue, we propose an analytical band calculation (ABC) model to study monolayer molybden… ▽ More A simple band model such as the effective mass approximation (EMA) can be used to quickly obtain the lower-energy region for the band structure of monolayer molybdenum disulfide. But the EMA band model cannot give the correct description for the band structure in the higher-energy region. To address this major issue, we propose an analytical band calculation (ABC) model to study monolayer molybdenum disulfide. Important parameters of the ABC model are obtained by fitting the three-direction band structure of monolayer molybdenum disulfide obtained from the first-principles (FP) method. The proposed ABC model fits well with the FP band structure calculation result for monolayer molybdenum disulfide. We also use the ABC model to calculate physical quantities used in carrier transport such as density of states and group velocity. Our ABC model can be extended and further utilized for calculating the key physical quantities of ballistic transport of 2D semiconductor materials. △ Less

Submitted 4 May, 2022; originally announced May 2022.

Journal ref: J. Comput. Electron. 21, 571-581 (2022)

Superconducting properties of the spin Hall candidate Ta3Sb with eightfold degeneracy

Authors: R. Chapai, A. Rydh, M. P. Smylie, D. Y. Chung, H. Zheng, A. E. Koshelev, J. E. Pearson, W. -K. Kwok, J. F. Mitchell, U. Welp

Abstract: We report the synthesis and characterization of phase pure Ta3Sb, a material predicted to be topological with eightfold degenerate fermionic states [Science 353, aaf5037 (2016)] and to exhibit a large spin Hall effect [Sci. Adv. 5, eaav8575 (2019]. We observe superconductivity in Ta3Sb with Tc~ 0.67 K in both electrical resistivity \r{ho}(T) and specific heat C(T) measurements. Field dependent mea… ▽ More We report the synthesis and characterization of phase pure Ta3Sb, a material predicted to be topological with eightfold degenerate fermionic states [Science 353, aaf5037 (2016)] and to exhibit a large spin Hall effect [Sci. Adv. 5, eaav8575 (2019]. We observe superconductivity in Ta3Sb with Tc~ 0.67 K in both electrical resistivity \r{ho}(T) and specific heat C(T) measurements. Field dependent measurements yield the superconducting phase diagram with an upper critical field of Hc2(0) ~ 0.95 T, corresponding to a superconducting coherence length of ξ ~18.6 nm. The gap ratio deduced from specific heat anomaly, 2Δ0/kBTc is 3.46, a value close to the Bardeen-Cooper-Schrieffer (BCS) value of 3.53. From a detailed analysis of both the transport and thermodynamic data within the Ginsburg-Landau (GL) framework, a GL parameter of \k{appa} ~90 is obtained identifying Ta3Sb as an extreme type-II superconductor. The observation of superconductivity in an eightfold degenerate fermionic compound with topological surface states and predicted large spin Hall conductance positions Ta3Sb as an appealing platform to further explore exotic quantum states in multifold degenerate systems. △ Less

Submitted 28 April, 2022; originally announced April 2022.

Comments: 16 Pages, 3 figures

Journal ref: Phys. Rev. B 105, 184510 (2022)

Correlated states of 2D electrons near the Landau level filling $ν=1/7$

Authors: Yoon Jang Chung, D. Graf, L. W. Engel, K. A. Villegas Rosales, P. T. Madathil, K. W. Baldwin, K. W. West, L. N. Pfeiffer, M. Shayegan

Abstract: The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density… ▽ More The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density $n=6.1\times10^{10}$ /cm$^2$ and mobility $μ=25\times10^6$ cm$^2$/Vs, we find a deep minimum in the longitudinal magnetoresistance ($R_{xx}$) at $ν=1/7$ when $T\simeq104$ mK. There is also a clear sign of a develo** minimum in the $R_{xx}$ at $ν=2/13$. While insulating phases are still predominant when $ν\lesssim1/6$, these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence $ν=p/(2mp\pm1)$ even in the very low Landau level filling limit. The magnetic field dependent activation energies deduced from the relation $R_{xx}\propto e^{E_A/2kT}$ corroborate this view, and imply the presence of pinned Wigner solid states when $ν\neq p/(2mp\pm1)$. Similar results are seen in another sample with a lower density, further generalizing our observations. △ Less

Submitted 20 March, 2022; originally announced March 2022.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 128, 026802 (2022)

Record-quality GaAs two-dimensional hole systems

Authors: Yoon Jang Chung, C. Wang, S. K. Singh, A. Gupta, K. W. Baldwin, K. W. West, R. Winkler, M. Shayegan, L. N. Pfeiffer

Abstract: The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation do**, with mobility values as hi… ▽ More The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation do**, with mobility values as high as $5.8\times10^6$ cm$^2$/Vs at a hole density of $p=1.3\times10^{11}$ /cm$^2$, implying a mean-free path of $\simeq27$ $μ$m. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling $ν=12/25$ near $ν=1/2$. Furthermore, we see a deep minimum develop at $ν=1/5$ in the magnetoresistance of a sample with a much lower hole density of $p=4.0\times10^{10}$ /cm$^2$ where we measure a mobility of $3.6\times10^6$ cm$^2$/Vs. These improvements in sample quality were achieved by reduction of residual impurities both in the GaAs channel and the AlGaAs barrier material, as well as optimization in design of the sample structure. △ Less

Submitted 20 March, 2022; originally announced March 2022.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. Materials 6, 034005 (2022)

Single-shot readout of multiple donor electron spins with a gate-based sensor

Authors: Mark R. Hogg, Prasanna Pakkiam, Samuel K. Gorman, Andrey V. Timofeev, Yousun Chung, Gurpreet K. Gulati, Matthew G. House, Michelle Y. Simmons

Abstract: Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the s… ▽ More Proposals for large-scale semiconductor spin-based quantum computers require high-fidelity single-shot qubit readout to perform error correction and read out qubit registers at the end of a computation. However, as devices scale to larger qubit numbers integrating readout sensors into densely packed qubit chips is a critical challenge. Two promising approaches are minimising the footprint of the sensors, and extending the range of each sensor to read more qubits. Here we show high-fidelity single-shot electron spin readout using a nanoscale single-lead quantum dot (SLQD) sensor that is both compact and capable of reading multiple qubits. Our gate-based SLQD sensor is deployed in an all-epitaxial silicon donor spin qubit device, and we demonstrate single-shot readout of three $^{31}$P donor quantum dot electron spins with a maximum fidelity of 95%. Importantly in our device the quantum dot confinement potentials are provided inherently by the donors, removing the need for additional metallic confinement gates and resulting in strong capacitive interactions between sensor and donor quantum dots. We observe a $1/d^{1.4}$ scaling of the capacitive coupling between sensor and $^{31}$P dots (where $d$ is the sensor-dot distance), compared to $1/d^{2.5-3.0}$ in gate-defined quantum dot devices. Due to the small qubit size and strong capacitive interactions in all-epitaxial donor devices, we estimate a single sensor can achieve single-shot readout of approximately 15 qubits in a linear array, compared to 3-4 qubits for a similar sensor in a gate-defined quantum dot device. Our results highlight the potential for spin qubit devices with significantly reduced sensor densities. △ Less

Submitted 17 March, 2022; originally announced March 2022.

Capacitive Response of Wigner Crystals at the Quantum Hall Plateau

Authors: Lili Zhao, Wenlu Lin, Y. J. Chung, K. W. Baldwin, L. N. Pfeiffer, Yang Liu

Abstract: In this report, we study ultra-high-mobility two-dimensional (2D) electron/hole systems with high precision capacitance measurement. We find that the capacitance charge appears only at the fringe of the gate at high magnetic field when the 2D conductivity decreases significantly. At integer quantum Hall effects, the capacitance vanishes and forms a plateau at high temperatures $T\gtrsim 300$ mK, w… ▽ More In this report, we study ultra-high-mobility two-dimensional (2D) electron/hole systems with high precision capacitance measurement. We find that the capacitance charge appears only at the fringe of the gate at high magnetic field when the 2D conductivity decreases significantly. At integer quantum Hall effects, the capacitance vanishes and forms a plateau at high temperatures $T\gtrsim 300$ mK, which surprisingly, disappears at $T\lesssim 100$ mK. This anomalous behavior is likely a manifestation that the dilute particles/vacancies in the top-most Landau level form Wigner crystal, which has finite compressibility and can host polarization current. △ Less

Submitted 16 January, 2022; originally announced January 2022.

Extended Kohler$^,$s Rule of Magnetoresistance

Authors: **g Xu, Fei Han, Ting-Ting Wang, Laxman R. Thoutam, Samuel E. Pate, Mingda Li, Xufeng Zhang, Yong-Lei Wang, Roxanna Fotovat, Ulrich Welp, Xiuquan Zhou, Wai-Kwong Kwok, Duck Young Chung, Mercouri G. Kanatzidis, Zhi-Li Xiao

Abstract: A notable phenomenon in topological semimetals is the violation of Kohler$^,$s rule, which dictates that the magnetoresistance $MR$ obeys a scaling behavior of $MR = f(H/ρ_0$), where $MR = [ρ_H-ρ_0]/ρ_0$ and $H$ is the magnetic field, with $ρ_H$ and $ρ_0$ being the resistivity at $H$ and zero field, respectively. Here we report a violation originating from thermally-induced change in the carrier d… ▽ More A notable phenomenon in topological semimetals is the violation of Kohler$^,$s rule, which dictates that the magnetoresistance $MR$ obeys a scaling behavior of $MR = f(H/ρ_0$), where $MR = [ρ_H-ρ_0]/ρ_0$ and $H$ is the magnetic field, with $ρ_H$ and $ρ_0$ being the resistivity at $H$ and zero field, respectively. Here we report a violation originating from thermally-induced change in the carrier density. We find that the magnetoresistance of the Weyl semimetal, TaP, follows an extended Kohler$^,$s rule $MR = f[H/(n_Tρ_0)]$, with $n_T$ describing the temperature dependence of the carrier density. We show that $n_T$ is associated with the Fermi level and the dispersion relation of the semimetal, providing a new way to reveal information on the electronic bandstructure. We offer a fundamental understanding of the violation and validity of Kohler$^,$s rule in terms of different temperature-responses of $n_T$. We apply our extended Kohler$^,$s rule to BaFe$_2$(As$_{1-x}$P$_x$)$_2$ to settle a long-standing debate on the scaling behavior of the normal-state magnetoresistance of a superconductor, namely, $MR$ ~ $tan^2θ_H$, where $θ_H$ is the Hall angle. We further validate the extended Kohler$^,$s rule and demonstrate its generality in a semiconductor, InSb, where the temperature-dependent carrier density can be reliably determined both theoretically and experimentally. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Journal ref: Phys. Rev. X 11, 041029 (2021)

Melting phase diagram of bubble phases in high Landau levels

Authors: K. A. Villegas, S. K. Singh, H. Deng, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: A low-disorder, two-dimensional electron system (2DES) subjected to a large perpendicular magnetic field and cooled to very low temperatures provides a rich platform for studies of many-body quantum phases. The magnetic field quenches the electrons' kinetic energy and quantizes the energy into a set of Landau levels, allowing the Coulomb interaction to dominate. In excited Landau levels, the fine… ▽ More A low-disorder, two-dimensional electron system (2DES) subjected to a large perpendicular magnetic field and cooled to very low temperatures provides a rich platform for studies of many-body quantum phases. The magnetic field quenches the electrons' kinetic energy and quantizes the energy into a set of Landau levels, allowing the Coulomb interaction to dominate. In excited Landau levels, the fine interplay between short- and long-range interactions stabilizes bubble phases, Wigner crystals with more than one electron per unit cell. Here we present the screening properties of bubble phases, probed via a simple capacitance technique where the 2DES is placed between a top and a bottom gate and the electric field penetrating through the 2DES is measured. The bubbles formed at very low temperatures screen the electric field poorly as they are pinned by the residual disorder potential, allowing a large electric field to reach the top gate. As the temperature is increased, the penetrating electric field decreases and, surprisingly, exhibits a pronounced minimum at a temperature that appears to coincide with the melting temperature of the bubble phase. We deduce a quantitative phase diagram for the transition from bubble to liquid phases for Landau level filling factors $4\leqν\leq5$. △ Less

Submitted 27 August, 2021; originally announced August 2021.

Flop**-mode electric dipole spin resonance in phosphorus donor qubits in silicon

Authors: F. N. Krauth, S. K. Gorman, Y. He, M. T. Jones, P. Macha, S. Kocsis, C. Chua, B. Voisin, S. Rogge, R. Rahman, Y. Chung, M. Y. Simmons

Abstract: Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combi… ▽ More Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $π/2-X$ gate error rates of $\sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations. △ Less

Submitted 6 May, 2021; originally announced May 2021.

Comments: Main text: 8 pages, 4 figures. Appendix: 9 page, 3 figures

Fractional quantum Hall effect energy gap: role of electron layer thickness

Authors: K. A. Villegas Rosales, P. T. Madathil, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally mea… ▽ More The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a quantitative comparison between the measured energy gaps and the available theoretical calculations that take into account the role of finite layer thickness and Landau level mixing. Our systematic experimental study of the FQHE energy gaps uses very high-quality two-dimensional electron systems confined to GaAs quantum wells with varying well widths. All the measured energy gaps fall bellow the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find the measured energy gaps to be in reasonable quantitative agreement with calculations, although some discrepancies remain. △ Less

Submitted 6 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Lett. 127, 056801 (2021)

Unlocking the Origin of Compositional Fluctuations in InGaN Light Emitting Diodes

Authors: Tara P. Mishra, Govindo J. Syaranamual, Zeyu Deng, **g Yang Chung, Li Zhang, Sarah A Goodman, Lewys Jones, Michel Bosman, Silvija Gradečak, Stephen J. Pennycook, Pieremanuele Canepa

Abstract: The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly understood. Here we have combined electron energy loss spectroscopy (EELS) imaging at sub-nanometer resolution with multiscale computational models to obtain a statistic… ▽ More The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly understood. Here we have combined electron energy loss spectroscopy (EELS) imaging at sub-nanometer resolution with multiscale computational models to obtain a statistical distribution of the compositional fluctuations in $In_{x}Ga_{1-x}N$ quantum wells (QWs). Employing a multiscale computational model, we show the tendency of intrinsic compositional fluctuation in $In_{x}Ga_{1-x}N$ QWs at different Indium concentration and in the presence of strain. We have developed a systematic formalism based on the autonomous detection of compositional fluctuation in observed and simulated EELS maps. We have shown a direct comparison between the computationally predicted and experimentally observed compositional fluctuations. We have found that although a random alloy model captures the distribution of compositional fluctuations in relatively low In ($\sim$ 18%) content $In_{x}Ga_{1-x}N$ QWs, there exists a striking deviation from the model in higher In content ($\geq$ 24%) QWs. Our results highlight a distinct behavior in carrier localization driven by compositional fluctuations in the low and high In-content InGaN QWs, which would ultimately affect the performance of LEDs. Furthermore, our robust computational and atomic characterization method can be widely applied to study materials in which nanoscale compositional fluctuations play a significant role on the material performance. △ Less

Submitted 6 February, 2021; originally announced February 2021.

Comments: 38 pages, 5 Figures

Journal ref: Physical Review Materials 5, 024605 (2021)

Quasi-two-dimensional heterostructures (K$M_{1-x}$Te)(LaTe$_{3}$) ($M$ = Mn, Zn) with charge density waves

Authors: **-Ke Bao, Christos D. Malliakas, Chi Zhang, Songting Cai, Haijie Chen, Alexander J. E. Rettie, Brandon L. Fisher, Duck Young Chung, Vinayak P. Dravid, Mercouri G. Kanatzidis

Abstract: Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. We report the intergrowth compounds KLa$M$$_{1-x}$Te$_{4}$ ($M$ = Mn, Zn; $x\approx$ 0.35) featuring two chemically distinct alternating layers [LaTe$_3$] and [K$M$$_{1-x}$Te]. Their crystal structures are incomm… ▽ More Layered heterostructure materials with two different functional building blocks can teach us about emergent physical properties and phenomena arising from interactions between the layers. We report the intergrowth compounds KLa$M$$_{1-x}$Te$_{4}$ ($M$ = Mn, Zn; $x\approx$ 0.35) featuring two chemically distinct alternating layers [LaTe$_3$] and [K$M$$_{1-x}$Te]. Their crystal structures are incommensurate, determined by single X-ray diffraction for the Mn compound and transmission electron microscope (TEM) study for the Zn compound. KLaMn$_{1-x}$Te$_{4}$ crystallizes in the orthorhombic superspace group $Pmnm$(01/2$γ$)$s$00 with lattice parameters $a$ = 4.4815(3) Å, $b$ = 21.6649(16) Å and $c$ = 4.5220(3) Å. It exhibits charge density wave (CDW) order at room temperature with a modulation wave vector $\mathbf{q}$ = 1/2$\mathbf{b}$* + 0.3478$\mathbf{c}$* originating from electronic instability of Te-square nets in [LaTe$_{3}$] layers. The Mn analog exhibits a cluster spin glass behavior with spin freezing temperature $T_{\mathrm{f}}$ $\approx$ 5 K attributed to disordered Mn vacancies and competing magnetic interactions in the [Mn$_{1-x}$Te] layers. The Zn analog also has charge density wave order at room temperature with a similar $\mathbf{q}$-vector having the $\mathbf{c}$* component ~ 0.346 confirmed by selected-area electron diffraction (SAED). Electron transfer from [K$M_{1-x}$Te] to [LaTe$_{3}$] layers exists in KLa$M_{1-x}$Te$_{4}$, leading to an enhanced electronic specific heat coefficient. The resistivities of KLa$M_{1-x}$Te$_{4}$ ($M$ = Mn, Zn) exhibit metallic behavior at high temperatures and an upturn at low temperatures, suggesting partial localization of carriers in the [LaTe$_{3}$] layers with some degree of disorder associated with the $M$ atom vacancies in the [$M_{1-x}$Te] layers. △ Less

Submitted 16 April, 2021; v1 submitted 22 November, 2020; originally announced November 2020.

Comments: 1 table, 10 figures, 35 pages

Journal ref: Chemistry of Materials 33(6), 2155-2164 (2021)

Observation of spontaneous valley polarization of itinerant electrons

Authors: Md. S. Hossain, M. K. Ma, K. A. Villegas Rosales, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit electron's valley index rather than its spin. An important component in this quest would be the ability to control the valley index… ▽ More Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field, valleytronics, which seeks to exploit electron's valley index rather than its spin. An important component in this quest would be the ability to control the valley index in a convenient fashion. Here we show that the valley polarization can be switched from zero to one by a small reduction in density, simply tuned by a gate bias, in a two-dimensional electron system. This phenomenon arises fundamentally as a result of electron-electron interaction in an itinerant, dilute electron system. Essentially, the kinetic energy favors an equal distribution of electrons over the available valleys, whereas the interaction between electrons prefers single-valley occupancy below a critical density. The gate-bias-tuned transition we observe is accompanied by a sudden, two-fold change in sample resistance, making the phenomenon of interest for potential valleytronic transistor device applications. Our observation constitutes a quintessential demonstration of valleytronics in a very simple experiment. △ Less

Submitted 15 November, 2020; v1 submitted 12 November, 2020; originally announced November 2020.

Journal ref: Phys. Rev. Lett. 127, 116601 (2021)

Observation of Spontaneous Ferromagnetism in a Two-Dimensional Electron System

Authors: Md. S. Hossain, M. K. Ma, K. A. Villegas Rosales, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid,… ▽ More What are the ground states of an interacting, low-density electron system? In the absence of disorder, it has long been expected that as the electron density is lowered, the exchange energy gained by aligning the electron spins should exceed the enhancement in the kinetic (Fermi) energy, leading to a (Bloch) ferromagnetic transition. At even lower densities, another transition to a (Wigner) solid, an ordered array of electrons, should occur. Experimental access to these regimes, however, has been limited because of the absence of a material platform that supports an electron system with very high-quality (low disorder) and low density simultaneously. Here we explore the ground states of interacting electrons in an exceptionally-clean, two-dimensional electron system confined to a modulation-doped AlAs quantum well. The large electron effective mass in this system allows us to reach very large values of the interaction parameter $r_s$, defined as the ratio of the Coulomb to Fermi energies. As we lower the electron density via gate bias, we find a sequence of phases, qualitatively consistent with the above scenario: a paramagnetic phase at large densities, a spontaneous transition to a ferromagnetic state when $r_s$ surpasses 35, and then a phase with strongly non-linear current-voltage characteristics, suggestive of a pinned Wigner solid, when $r_s$ exceeds $\simeq 38$. However, our sample makes a transition to an insulating state at $r_s\simeq 27$, preceding the onset of the spontaneous ferromagnetism, implying that, besides interaction, the role of disorder must also be taken into account in understanding the different phases of a realistic dilute electron system. △ Less

Submitted 2 November, 2020; originally announced November 2020.

Journal ref: Proceedings of the National Academy of Sciences Dec 2020, 202018248

Competition between fractional quantum Hall liquid and Wigner solid at small fillings: Role of layer thickness and Landau level mixing

Authors: K. A. Villegas Rosales, S. K. Singh, Meng K. Ma, Md. Shafayat Hossain, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($ν$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely… ▽ More What is the fate of the ground state of a two-dimensional electron system (2DES) at very low Landau level filling factors ($ν$) where interaction reigns supreme? An ordered array of electrons, the so-called Wigner crystal, has long been believed to be the answer. It was in fact the search for the elusive Wigner crystal that led to the discovery of an unexpected, incompressible liquid state, namely the fractional quantum Hall state at $ν=1/3$. Understanding the competition between the liquid and solid ground states has since remained an active field of fundamental research. Here we report experimental data for a new two-dimensional system where the electrons are confined to an AlAs quantum well. The exceptionally high quality of the samples and the large electron effective mass allow us to determine the liquid-solid phase diagram for the two-dimensional electrons in a large range of filling factors near $\simeq 1/3$ and $\simeq 1/5$. The data and their comparison with an available theoretical phase diagram reveal the crucial role of Landau level mixing and finite electron layer thickness in determining the prevailing ground states. △ Less

Submitted 29 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Research 3, 013181 (2021)

Observing the suppression of superconductivity in RbEuFe$_4$As$_4$ by correlated magnetic fluctuations

Authors: D. Collomb, S. J. Bending, A. E. Koshelev, M. P. Smylie, L. Farrar, J. -K. Bao, D. Y. Chung, M. G. Kanatzidis, W. -K. Kwok, U. Welp

Abstract: In this letter, we describe quantitative magnetic imaging of superconducting vortices in RbEuFe$_4$As$_4$ in order to investigate the unique interplay between the magnetic and superconducting sublattices. Our scanning Hall microscopy data reveal a pronounced suppression of the superfluid density near the magnetic ordering temperature in good qualitative agreement with a recently-developed model de… ▽ More In this letter, we describe quantitative magnetic imaging of superconducting vortices in RbEuFe$_4$As$_4$ in order to investigate the unique interplay between the magnetic and superconducting sublattices. Our scanning Hall microscopy data reveal a pronounced suppression of the superfluid density near the magnetic ordering temperature in good qualitative agreement with a recently-developed model describing the suppression of superconductivity by correlated magnetic fluctuations. These results indicate a pronounced exchange interaction between the superconducting and magnetic subsystems in RbEuFe\textsubscript{4}As\textsubscript{4} with important implications for future investigations of physical phenomena arising from the interplay between them. △ Less

Submitted 23 February, 2021; v1 submitted 19 October, 2020; originally announced October 2020.

Journal ref: Phys. Rev. Lett. 126, 157001 (2021)

Ultra-high quality two-dimensional electron systems

Authors: Yoon Jang Chung, K. A. Villegas-Rosales, K. W. Baldwin, P. T. Madathil, K. W. West, M. Shayegan, L. N. Pfeiffer

Abstract: Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra… ▽ More Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of $44\times10^6$ cm$^2$/Vs at an electron density of $2.0\times10^{11}$ /cm$^2$. These results imply only 1 residual impurity for every $10^{10}$ Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe/bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap of the $ν=5/2$ state, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches $Δ\simeq820$ mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and significantly advance the field. △ Less

Submitted 19 April, 2021; v1 submitted 5 October, 2020; originally announced October 2020.

Comments: 15 pages, 4 figures in main text. 4 pages, 2 figures in supplement. Nat. Mater. (2021)

Bloch Ferromagnetism of Composite Fermions

Authors: Md. Shafayat Hossain, Tongzhou Zhao, Songyang Pu, M. A. Mueed, M. K. Ma, K. A. Villegas Rosales, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, J. K. Jain, M. Shayegan

Abstract: In 1929 Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully-magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. We report here the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferroma… ▽ More In 1929 Felix Bloch suggested that the paramagnetic Fermi sea of electrons should make a spontaneous transition to a fully-magnetized state at very low densities, because the exchange energy gained by aligning the spins exceeds the enhancement in the kinetic energy. We report here the observation of an abrupt, interaction-driven transition to full magnetization, highly reminiscent of Bloch ferromagnetism that has eluded experiments for the last ninety years. Our platform is the exotic two-dimensional Fermi sea of composite fermions at half-filling of the lowest Landau level. Via quantitative measurements of the Fermi wavevector, which provides a direct measure of the spin polarization, we observe a sudden transition from a partially-spin-polarized to a fully-spin-polarized ground state as we lower the composite fermions' density. Our detailed theoretical calculations provide a semi-quantitative account of this phenomenon. △ Less

Submitted 26 August, 2020; originally announced August 2020.

Journal ref: Nat. Phys. (2020); Link: https://www.nature.com/articles/s41567-020-1000-z

Precise Experimental Test of the Luttinger Theorem and Particle-Hole Symmetry for a Strongly Correlated Fermionic System

Authors: Md. S. Hossain, M. A. Mueed, M. K. Ma, K. A. V. Rosales, Y. J. Chung, L. N. Pfeiffer, K. W. West, K. W. Baldwin, M. Shayegan

Abstract: A fundamental concept in physics is the Fermi surface, the constant-energy surface in momentum space encompassing all the occupied quantum states at absolute zero temperature. In 1960, Luttinger postulated that the area enclosed by the Fermi surface should remain unaffected even when electron-electron interaction is turned on, so long as the interaction does not cause a phase transition. Understan… ▽ More A fundamental concept in physics is the Fermi surface, the constant-energy surface in momentum space encompassing all the occupied quantum states at absolute zero temperature. In 1960, Luttinger postulated that the area enclosed by the Fermi surface should remain unaffected even when electron-electron interaction is turned on, so long as the interaction does not cause a phase transition. Understanding what determines the Fermi surface size is a crucial and yet unsolved problem in strongly interacting systems such as high-$T_{c}$ superconductors. Here we present a precise test of the Luttinger theorem for a two-dimensional Fermi liquid system where the exotic quasi-particles themselves emerge from the strong interaction, namely for the Fermi sea of composite fermions (CFs). Via direct, geometric resonance measurements of the CFs' Fermi wavevector down to very low electron densities, we show that the Luttinger theorem is obeyed over a significant range of interaction strengths, in the sense that the Fermi sea area is determined by the density of the \textit{minority carriers} in the lowest Landau level. Our data also address the ongoing debates on whether or not CFs obey particle-hole symmetry, and if they are Dirac particles. We find that particle-hole symmetry is obeyed, but the measured Fermi sea area differs quantitatively from that predicted by the Dirac model for CFs. △ Less

Submitted 20 July, 2020; originally announced July 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 125, 046601 (2020); featured as Editor's suggestion

Heterostructure design to achieve high quality, high density GaAs 2D electron system with $g$-factor tending to zero

Authors: Yoon Jang Chung, S. Yuan, Yang Liu, K. W. Baldwin, K. W. West, M. Shayegan, L. N. Pfeiffer

Abstract: Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Landé $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value $g\simeq-0.44$ to zero and even to positive values under a sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-elec… ▽ More Hydrostatic pressure is a useful tool that can tune several key parameters in solid state materials. For example, the Landé $g$-factor in GaAs two-dimensional electron systems (2DESs) is expected to change from its bulk value $g\simeq-0.44$ to zero and even to positive values under a sufficiently large hydrostatic pressure. Although this presents an intriguing platform to investigate electron-electron interaction in a system with $g=0$, studies are quite limited because the GaAs 2DES density decreases significantly with increasing hydrostatic pressure. Here we show that a simple model, based on pressure-dependent changes in the conduction band alignment, quantitatively explains this commonly observed trend. Furthermore, we demonstrate that the decrease in the 2DES density can be suppressed by more than a factor of 3 through an innovative heterostructure design. △ Less

Submitted 19 April, 2021; v1 submitted 22 June, 2020; originally announced June 2020.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 117, 022102 (2020)