Showing 1–50 of 121 results for author: Chulkov, E

Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials

Authors: I. I. Klimovskikh, S. V. Eremeev, D. A. Estyunin, S. O. Filnov, K. Shimada, V. A. Golyashov, O. E. Tereshchenko, K. A. Kokh, A. S. Frolov, A. I. Sergeev, V. S. Stolyarov, V. Miksic Trontl, L. Petaccia, G. Di Santo, M. Tallarida, J. Dai, S. Blanco-Canosa, T. Valla, A. M. Shikin, E. V. Chulkov

Abstract: Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifi… ▽ More Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects. △ Less

Submitted 18 March, 2024; originally announced March 2024.

Ubiquitous order-disorder transition in the Mn antisite sublattice of the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ magnetic topological insulators

Authors: M. Sahoo, I. J. Onuorah, L. C. Folkers, E. V. Chulkov, M. M. Otrokov, Z. S. Aliev, I. R. Amiraslanov, A. U. B. Wolter, B. Büchner, L. T. Corredor, Ch. Wang, Z. Salman, A. Isaeva, R. De Renzi, G. Allodi

Abstract: Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this mater… ▽ More Magnetic topological insulators (TIs) herald a wealth of applications in spin-based technologies, relying on the novel quantum phenomena provided by their topological properties. Particularly promising is the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ layered family of established intrinsic magnetic TIs that can flexibly realize various magnetic orders and topological states. High tunability of this material platform is enabled by manganese-pnictogen intermixing, whose amounts and distribution patterns are controlled by synthetic conditions. Positive implication of the strong intermixing in MnSb$_2$Te$_4$ is the interlayer exchange coupling switching from antiferromagnetic to ferromagnetic, and the increasing magnetic critical temperature. On the other side, intermixing also implies atomic disorder which may be detrimental for applications. Here, we employ nuclear magnetic resonance and muon spin spectroscopy, sensitive local probe techniques, to scrutinize the impact of the intermixing on the magnetic properties of (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$. Our measurements not only confirm the opposite alignment between the Mn magnetic moments on native sites and antisites in the ground state of MnSb$_2$Te$_4$, but for the first time directly show the same alignment in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ with n = 0, 1 and 2. Moreover, for all compounds, we find the static magnetic moment of the Mn antisite sublattice to disappear well below the intrinsic magnetic transition temperature, leaving a homogeneous magnetic structure undisturbed by the intermixing. Our findings provide a microscopic understanding of the crucial role played by Mn-Bi intermixing in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_n$ and offer pathways to optimizing the magnetic gap in its surface states. △ Less

Submitted 9 February, 2024; originally announced February 2024.

Comments: 13 pages, 4 figures (Main) and 8 pages, 10 figures (Supplemental)

On the floating of the topological surface state on top of a thick lead layer: The case of the Pb/Bi2Se3 interface

Authors: Oreste De Luca, Igor A. Shvets, Sergey V. Eremeev, Ziya S. Aliev, Marek Kopciuszynski, Alexey Barinov, Fabio Ronci, Stefano Colonna, Evgueni V. Chulkov, Raffaele G. Agostino, Marco Papagno, Roberto Flammini

Abstract: The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leave… ▽ More The puzzling question about the floating of the topological surface state on top of a thick Pb layer, has now possibly been answered. A study of the interface made by Pb on Bi2Se3 for different temperature and adsorbate coverage condition, allowed us to demonstrate that the evidence reported in the literature can be related to the surface diffusion phenomenon exhibited by the Pb atoms, which leaves the substrate partially uncovered. Comprehensive density functional theory calculations show that despite the specific arrangement of the atoms at the interface, the topological surface state cannot float on top of the adlayer but rather tends to move inward within the substrate. △ Less

Submitted 27 November, 2023; v1 submitted 25 August, 2023; originally announced August 2023.

Comments: 9 pages, 5 figures

Insight into the electronic structure of the centrosymmetric skyrmion magnet GdRu$_2$Si$_2$

Authors: S. V. Eremeev, D. Glazkova, G. Poelchen, A. Kraiker, K. Ali, A. V. Tarasov, S. Schulz, K. Kliemt, E. V. Chulkov, V. S. Stolyarov, A. Ernst, C. Krellner, D. Yu. Usachov, D. V. Vyalikh

Abstract: The discovery of a square magnetic-skyrmion lattice in GdRu$_2$Si$_2$, with the smallest so far found skyrmion diameter and without a geometrically frustrated lattice, has attracted significant attention, particularly for potential applications in memory devices and quantum computing. In this work, we present a comprehensive study of surface and bulk electronic structures of GdRu$_2$Si$_2$ by util… ▽ More The discovery of a square magnetic-skyrmion lattice in GdRu$_2$Si$_2$, with the smallest so far found skyrmion diameter and without a geometrically frustrated lattice, has attracted significant attention, particularly for potential applications in memory devices and quantum computing. In this work, we present a comprehensive study of surface and bulk electronic structures of GdRu$_2$Si$_2$ by utilizing momentum-resolved photoemission (ARPES) measurements and first-principles calculations. We show how the electronic structure evolves during the antiferromagnetic transition when a peculiar helical order of 4$f$ magnetic moments within the Gd layers sets in. A nice agreement of the ARPES-derived electronic structure with the calculated one has allowed us to characterize the features of the Fermi surface (FS), unveil the nested region along the $k_z$ at the corner of the 3D FS, and reveal their orbital compositions. Our findings suggest that the Ruderman-Kittel-Kasuya-Yosida interaction plays a decisive role in stabilizing the spiral-like order of Gd 4$f$ moments responsible for the skyrmion physics in GdRu$_2$Si$_2$. Our results provide a deeper understanding of electronic and magnetic properties of this material, which is crucial for predicting and develo** novel skyrmion-based devices. △ Less

Submitted 2 June, 2023; originally announced June 2023.

Comments: 13 pages, 8 figures

Journal ref: Nanoscale Adv., 2023,5, 6678-6687

High Chern number van der Waals magnetic topological multilayers MnBi$_2$Te$_4$/hBN

Authors: Mihovil Bosnar, Alexandra Yu. Vyazovskaya, Evgeniy K. Petrov, Evgueni V. Chulkov, Mikhail M. Otrokov

Abstract: Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, b… ▽ More Chern insulators are two-dimensional magnetic topological materials that conduct electricity along their edges via the one-dimensional chiral modes. The number of these modes is a topological invariant called the first Chern number $C$, that defines the quantized Hall conductance as $S_{xy}= C e^2/h$. Increasing $C$ is pivotal for the realization of low-power-consumption topological electronics, but there has been no clear-cut solution of this problem so far, with the majority of existing Chern insulators showing $C=1$. Here, by using state-of-the-art theoretical methods, we propose an efficient approach for the realization of the high-$C$ Chern insulator state in MnBi$_2$Te$_4$/hBN van der Waals multilayer heterostructures. We show that a stack of $n$ MnBi$_2$Te$_4$ films with $C=1$ intercalated by hBN monolayers gives rise to a high Chern number state with $C=n$, characterized by $n$ chiral edge modes. This state can be achieved both under the external magnetic field and without it, both cases leading to the quantized Hall conductance $S_{xy}= C e^2/h$. Our results therefore pave way to practical high-$C$ quantized Hall systems. △ Less

Submitted 27 December, 2022; originally announced December 2022.

Comments: 10 pages, 5 figures

Dramatic Plasmon Response to the Charge-Density-Wave Gap Development in $1\textit{T}-{\mathrm{TiSe}}_{2}$

Authors: Zijian Lin, Cuixiang Wang, A. Balassis, J. P. Echeverry, S. Vasenko, V. M. Silkin, E. V. Chulkov, Youguo Shi, Jiandi Zhang, Jiandong Guo, Xuetao Zhu

Abstract: 1T-TiSe2 is one of the most studied charge density wave (CDW) systems, not only because of its peculiar properties related to the CDW transition, but also due to its status as a promising candidate of exciton insulator signaled by the proposed plasmon softening at the CDW wave vector. Using high-resolution electron energy loss spectroscopy, we report a systematic study of the temperature-dependent… ▽ More 1T-TiSe2 is one of the most studied charge density wave (CDW) systems, not only because of its peculiar properties related to the CDW transition, but also due to its status as a promising candidate of exciton insulator signaled by the proposed plasmon softening at the CDW wave vector. Using high-resolution electron energy loss spectroscopy, we report a systematic study of the temperature-dependent plasmon behaviors of 1T-TiSe2. We unambiguously resolve the plasmon from phonon modes, revealing the existence of Landau dam** to the plasmon at finite momentums, which does not support the plasmon softening picture for exciton condensation. Moreover, we discover that the plasmon lifetime at zero momentum responds dramatically to the bandgap evolution associated with the CDW transition. The interband transitions near the Fermi energy in the normal phase is demonstrated serving as a strong dam** channel of plasmons, while such a channel in the CDW phase is suppressed due to the CDW gap opening, which results in the dramatic tunability of the plasmon in semimetals or small-gap semiconductors. △ Less

Submitted 26 October, 2022; originally announced October 2022.

Journal ref: Phys. Rev. Lett. 129, 187601 (2022)

Interplay between exchange split Dirac and Rashba-type surface states in MnBi$_2$Te$_4$/BiTeI interface

Authors: N. L. Zaitsev, I. P. Rusinov, T. V. Menshchikova, E. V. Chulkov

Abstract: Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We found significant difference in electronic properties at different types of contact between substrate and the overlayer. While the case of Te-Te interface forms n… ▽ More Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We found significant difference in electronic properties at different types of contact between substrate and the overlayer. While the case of Te-Te interface forms natural expansion of the substrate, when Dirac cone state locates mostly in the polar overlayer region and undergoes slight exchange splitting, Te-I contact is the source of four-band state contributed by the substrate Dirac cone and Rashba-type state of the polar trilayer. Owing to magnetic proximity, the pair of Kramers degeneracies for this state are lifted, what produces Hall response in transport regime. We believe, our findings provide new opportunities to construct novel type spintronic devices. △ Less

Submitted 15 August, 2022; originally announced August 2022.

Crystal structure and Raman active lattice vibrations of magnetic topological insulators MnBi2Te4 n(Bi2Te3) (n = 0, 1, . . . , 6)

Authors: I. R. Amiraslanov, Z. S. Aliev, P. A. Askerova, E. H. Alizade, Y. N. Aliyeva, N. A. Abdullayev, Z. A. Jahangirli, M. M. Otrokov, N. T. Mamedov, E. V. Chulkov

Abstract: Further to the structure of the intrinsic magnetic topological insulators MnBi2Te4 n(Bi2Te3) with n<4, where index n is the number of quintuple Te-Bi-Te-Bi-Te building blocks inserted between the neighboring septuple Te-Bi-Te-Mn-Te-Bi-Te building blocks, the structure of the members with n=4, 5 and 6 was studied using X-ray powder diffraction. The unit cell parameters and atomic positions were cal… ▽ More Further to the structure of the intrinsic magnetic topological insulators MnBi2Te4 n(Bi2Te3) with n<4, where index n is the number of quintuple Te-Bi-Te-Bi-Te building blocks inserted between the neighboring septuple Te-Bi-Te-Mn-Te-Bi-Te building blocks, the structure of the members with n=4, 5 and 6 was studied using X-ray powder diffraction. The unit cell parameters and atomic positions were calculated. The obtained and available structural data were summarized to show that the crystal structure of all members of MnBi2Te4 n(Bi2Te3) follows the cubic close packing principle, independently of the space group of the given member. Confocal Raman spectroscopy was then applied. Comparative analysis of the number, frequency, symmetry, and broadening of the vibration modes responsible for the lines in the Raman spectra of the systems with n=1,. . . ,6, as well as MnBi2Te4 (n=0) and Bi2Te3 (n=infinity) has shown that lattice dynamics of MnBi2Te4 n(Bi2Te3) with n>0 overwhelmingly dominates by the cooperative atomic displacements in the quintuple building blocks. △ Less

Submitted 20 July, 2022; originally announced July 2022.

Hydrogen-impurity induced unconventional magnetism in semiconducting molybdenum ditelluride

Authors: Jonas A. Krieger, Daniel Tay, Igor P. Rusinov, Sourabh Barua, Pabitra K. Biswas, Lukas Korosec, Thomas Prokscha, Thorsten Schmitt, Niels B. M. Schröter, Tian Shang, Toni Shiroka, Andreas Suter, Geetha Balakrishnan, Evgueni V. Chulkov, Vladimir N. Strocov, Zaher Salman

Abstract: Layered transition-metal dichalcogenides are proposed as building blocks for van der Waals (vdW) heterostructures due to their graphene-like two dimensional structure. For this purpose, a magnetic semiconductor could represent an invaluable component for various spintronics and topotronics devices. Here, we combine different local magnetic probe spectroscopies with angle-resolved photoemission and… ▽ More Layered transition-metal dichalcogenides are proposed as building blocks for van der Waals (vdW) heterostructures due to their graphene-like two dimensional structure. For this purpose, a magnetic semiconductor could represent an invaluable component for various spintronics and topotronics devices. Here, we combine different local magnetic probe spectroscopies with angle-resolved photoemission and density-functional theory calculations to show that 2H-MoTe2 is on the verge of becoming magnetic. Our results present clear evidence that the magnetism can be "switched on" by a hydrogen-like impurity. We also show that this magnetic state survives up to the free surface region, demonstrating the material's potential applicability as a magnetic component for thin-film heterostructures. △ Less

Submitted 7 June, 2022; originally announced June 2022.

Comments: 17 pages, 13 figures, including supplementary

Journal ref: Phys. Rev. Materials 7, 044414 (2023)

Relaxation of photo-excited hot carriers beyond multi-temperature models: General theory description verified by experiments on Pb/Si(111)

Authors: Peter Kratzer, Laurenz Rettig, Irina Yu. Sklyadneva, Evgueni V. Chulkov, Uwe Bovensiepen

Abstract: The equilibration of electronic carriers in metals after excitation by an ultra-short laser pulse provides an important class of non-equilibrium phenomena in metals and allows measuring the effective electron-phonon coupling parameter. Since the observed decay of the electronic distribution is governed by the interplay of both electron-electron and electron-phonon scattering, the interpretation of… ▽ More The equilibration of electronic carriers in metals after excitation by an ultra-short laser pulse provides an important class of non-equilibrium phenomena in metals and allows measuring the effective electron-phonon coupling parameter. Since the observed decay of the electronic distribution is governed by the interplay of both electron-electron and electron-phonon scattering, the interpretation of experimental data must rely on models that ideally should be easy to handle, yet accurate. In this work, an extended rate-equation model is proposed that explicitly includes non-thermal electronic carriers while at the same time incorporating data from first-principles calculations of the electron-phonon coupling via Eliashberg-Migdal theory. The model is verified against experimental data for thin Pb films grown on Si(111). Improved agreement between theory and experiment at short times (<0.3ps) due to non-thermal electron contributions is found. Moreover, the rate equations allow for widely different coupling strength to different phonon subsystems. Consequently, an indirect, electron-mediated energy transfer between strongly and weakly coupled groups of phonons can be observed in the simulations that leads to a retarded equilibration of the subsystems only after several picoseconds. △ Less

Submitted 5 October, 2022; v1 submitted 10 May, 2022; originally announced May 2022.

Comments: 11 pages, 6 figures

Journal ref: Phys. Rev. Research 4 033218 (2022)

Native point defects and their implications for the Dirac point gap at MnBi$_2$Te$_4$(0001)

Authors: M. Garnica, M. M. Otrokov, P. Casado Aguilar, I. I. Klimovskikh, D. Estyunin, Z. S. Aliev, I. R. Amiraslanov, N. A. Abdullayev, V. N. Zverev, M. B. Babanly, N. T. Mamedov, A. M. Shikin, A. Arnau, A. L. Vázquez de Parga, E. V. Chulkov, R. Miranda

Abstract: The Dirac point gap at the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$ is a highly debated issue. While the early photoemission measurements reported on large gaps in agreement with theoretical predictions, other experiments found vanishingly small splitting of the MnBi$_2$Te$_4$ Dirac cone. Here, we study the crystalline and electronic structure of MnBi$_2$Te$_4$(0001) u… ▽ More The Dirac point gap at the surface of the antiferromagnetic topological insulator MnBi$_2$Te$_4$ is a highly debated issue. While the early photoemission measurements reported on large gaps in agreement with theoretical predictions, other experiments found vanishingly small splitting of the MnBi$_2$Te$_4$ Dirac cone. Here, we study the crystalline and electronic structure of MnBi$_2$Te$_4$(0001) using scanning tunneling microscopy/spectroscopy (STM/S), micro($μ$)-laser angle resolved photoemission spectroscopy (ARPES), and density functional theory (DFT) calculations. Our topographic STM images clearly reveal features corresponding to point defects in the surface Te and subsurface Bi layers that we identify with the aid of STM simulations as Bi$_\text{Te}$ antisites (Bi atoms at the Te sites) and Mn$_\text{Bi}$ substitutions (Mn atoms at the Bi sites), respectively. X-ray diffraction (XRD) experiments further evidence the presence of cation (Mn-Bi) intermixing. Altogether, this affects the distribution of the Mn atoms, which, inevitably, leads to a deviation of the MnBi$_2$Te$_4$ magnetic structure from that predicted for the ideal crystal structure. Our transport measurements suggest that the degree of this deviation varies from sample to sample. Consistently, the ARPES/STS experiments reveal that the Dirac point gap of the topological surface state is different for different samples/sample cleavages. Our DFT surface electronic structure calculations show that, due to the predominant localization of the topological surface state near the Bi layers, Mn$_\text{Bi}$ defects can cause a strong reduction of the MnBi$_2$Te$_4$ Dirac point gap, given the recently proved antiparallel alignment of the Mn$_\text{Bi}$ moments with respect to those of the Mn layer. Our results provide a key to puzzle out the MnBi$_2$Te$_4$ Dirac point gap mystery. △ Less

Submitted 3 September, 2021; originally announced September 2021.

Novel magnetic stoichiometric superconductor EuRbFe4As4

Authors: T. K. Kim, K. S. Pervakov, V. A. Vlasenko, A. V. Sadakov, A. S. Usoltsev, D. V. Evtushinsky, S. W. Jung, G. Poelchen, K. Kummer, D. Roditchev, V. S. Stolyarov, I. A. Golovchanskiy, D. V. Vyalikh, V. Borisov, R. Valenti, A. Ernst, S. V. Eremeev, E. V. Chulkov, V. M. Pudalov

Abstract: In the novel stoichiometric iron-based material RbEuFe4As4 superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states; their coexistance is puzzling and represents a challenge for both experiment and theory. Using angle-resolved photoemission spectroscopy, resonant photoemission spectroscopy, Andreev reflection spectroscopy and scanning tunneling spectroscopy we have addr… ▽ More In the novel stoichiometric iron-based material RbEuFe4As4 superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states; their coexistance is puzzling and represents a challenge for both experiment and theory. Using angle-resolved photoemission spectroscopy, resonant photoemission spectroscopy, Andreev reflection spectroscopy and scanning tunneling spectroscopy we have addressed this puzzle and unambigously shown that Fe- and Eu-derived states are largely decoupled and that superconducting and a long range magnetic orders exist almost independently from each other. △ Less

Submitted 31 August, 2021; originally announced August 2021.

Comments: 7 pages, 8 figures, To appear in: Phys.Usp

Journal ref: Physics-Uspekhi, 65(7) 740 (2022)

Sample-dependent Dirac point gap in MnBi$_2$Te$_4$ and its response to the applied surface charge: a combined photoemission and ab initio study

Authors: A. M. Shikin, D. A. Estyunin, N. L. Zaitsev, D. Glazkova, I. I. Klimovskikh, S. Filnov, A. G. Rybkin, E. F. Schwier, S. Kumar, A. Kimura, N. Mamedov, Z. Aliev, M. B. Babanly, K. Kokh, O. E. Tereshchenko, M. M. Otrokov, E. V. Chulkov, K. A. Zvezdin, A. K. Zvezdin

Abstract: Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimen… ▽ More Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi$_2$Te$_4$ Dirac cone. Here, using micro($μ$)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi$_2$Te$_4$ samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Néel temperature at about 10-16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi$_2$Te$_4$ samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Further, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi$_2$Te$_4$ DP gap size. △ Less

Submitted 9 July, 2021; originally announced July 2021.

Journal ref: Phys. Rev. B 104, 115168 (2021)

Spectral features of magnetic domain walls on surface of 3D topological insulators

Authors: I. P. Rusinov, V. N. Men'shov, E. V. Chulkov

Abstract: We present a theoretical investigation of electron states hosted by magnetic domain walls on the 3D topological insulator surface. The consideration includes the domain walls with distinct vectorial and spatial textures. The study is carried out on the basis of the Hamiltonian for quasi-relativistic fermions by using a continual approach and tight-binding calculations. We derive the spectral chara… ▽ More We present a theoretical investigation of electron states hosted by magnetic domain walls on the 3D topological insulator surface. The consideration includes the domain walls with distinct vectorial and spatial textures. The study is carried out on the basis of the Hamiltonian for quasi-relativistic fermions by using a continual approach and tight-binding calculations. We derive the spectral characteristics and spatial localization of the the one-dimensional low-energy states appearing at the domain walls. The antiphase domain walls are shown to generate the topologically protected chiral states with linear dispersion, the group velocity and spin-polarization direction of which depend on an easy axis orientation. In the case of an easy plane anisotropy, we predict a realization of a dispersionless state, flat band in the energy spectrum, that is spin-polarized along the surface normal. Modification of the surface states in the multi-domain case, which is approximated by a periodic set of domain walls, is described as well. We find that the magnetic domain walls with complex internal texture, such as Néel-like or Bloch-like walls, also host the topological states, although their spectrum and spin structure can be changed compared with the sharp wall case. △ Less

Submitted 20 May, 2021; originally announced May 2021.

Topological magnetic materials of the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ van der Waals compounds family

Authors: S. V. Eremeev, I. P. Rusinov, Yu. M. Koroteev, A. Yu. Vyazovskaya, M. Hoffmann, P. M. Echenique, A. Ernst, M. M. Otrokov, E. V. Chulkov

Abstract: Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the f… ▽ More Combining robust magnetism, strong spin-orbit coupling and unique thickness-dependent properties of van der Waals crystals could enable new spintronics applications. Here, using density functional theory, we propose the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family of stoichiometric van der Waals compounds that harbour multiple topologically-nontrivial magnetic phases. In the groundstate, the first three members of the family, i.e. MnSb$_2$Te$_4$, ($n=0$), MnSb$_4$Te$_7$, ($n=1$), and MnSb$_6$Te$_{10}$, ($n=2$), are 3D antiferromagnetic topological insulators (AFMTIs), while for $n \geq 3$ a special phase is formed, in which a nontrivial topological order coexists with a partial magnetic disorder in the system of the decoupled 2D ferromagnets, whose magnetizations point randomly along the third direction. Furthermore, due to a weak interlayer exchange coupling, these materials can be field-driven into the FM Weyl semimetal ($n=0$) or FM axion insulator states ($n \geq 1$). Finally, in two dimensions we reveal these systems to show intrinsic quantum anomalous Hall and AFM axion insulator states, as well as quantum Hall state, achieved under external magnetic field, but without Landau levels. Our results provide a solid computational proof that MnSb$_2$Te$_4$, is not topologically trivial as was previously believed that opens possibilities of realization of a wealth of topologically-nontrivial states in the (MnSb$_2$Te$_4$)$\cdot$(Sb$_2$Te$_3$)$_n$ family. △ Less

Submitted 4 February, 2021; originally announced February 2021.

Mn-rich MnSb2Te4: A topological insulator with magnetic gap closing at high Curie temperatures of 45-50 K

Authors: S. Wimmer, J. Sánchez-Barriga, P. Küppers, A. Ney, E. Schierle, F. Freyse, O. Caha, J. Michalicka, M. Liebmann, D. Primetzhofer, M. Hoffmann, A. Ernst, M. M. Otrokov, G. Bihlmayer, E. Weschke, B. Lake, E. V. Chulkov, M. Morgenstern, G. Bauer, G. Springholz, O. Rader

Abstract: Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intri… ▽ More Ferromagnetic topological insulators exhibit the quantum anomalous Hall effect that might be used for high precision metrology and edge channel spintronics. In conjunction with superconductors, they could host chiral Majorana zero modes which are among the contenders for the realization of topological qubits. Recently, it was discovered that the stable 2+ state of Mn enables the formation of intrinsic magnetic topological insulators with A1B2C4 stoichiometry. However, the first representative, MnBi2Te4, is antiferromagnetic with 25 K Néel temperature and strongly n-doped. Here, we show that p-type MnSb2Te4, previously considered topologically trivial, is a ferromagnetic topological insulator in the case of a few percent of Mn excess. It shows (i) a ferromagnetic hysteresis with record high Curie temperature of 45-50 K, (ii) out-of-plane magnetic anisotropy and (iii) a two-dimensional Dirac cone with the Dirac point close to the Fermi level which features (iv) out-of-plane spin polarization as revealed by photoelectron spectroscopy and (v) a magnetically induced band gap that closes at the Curie temperature as demonstrated by scanning tunneling spectroscopy. Moreover, it displays (vi) a critical exponent of magnetization beta~1, indicating the vicinity of a quantum critical point. Ab initio band structure calculations reveal that the slight excess of Mn that substitutionally replaces Sb atoms provides the ferromagnetic interlayer coupling. Remaining deviations from the ferromagnetic order, likely related to this substitution, open the inverted bulk band gap and render MnSb2Te4 a robust topological insulator and new benchmark for magnetic topological insulators. △ Less

Submitted 25 April, 2021; v1 submitted 13 November, 2020; originally announced November 2020.

Journal ref: Adv. Mater. (1st September 2021)

Infrared study of the multiband low-energy excitations of the topological antiferromagnet MnBi$_2$Te$_4$

Authors: Bing Xu, Y. Zhang, E. H. Alizade, Z. A. Jahangirli, F. Lyzwa, E. Sheveleva, P. Marsik, Y. K. Li, Y. G. Yao, Z. W. Wang, B. Shen, Y. M. Dai, V. Kataev, M. M. Otrokov, E. V. Chulkov, N. T. Mamedov, Christian Bernhard

Abstract: With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The m… ▽ More With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband excitations and determine the band gap of $E_g \approx$ 0.17 eV. We also obtain evidence for two types of conduction bands with light and very heavy carriers. The multiband free carrier response gives rise to an unusually strong increase of the combined plasma frequency, $ω_{\mathrm{pl}}$, below 300 K. The band reconstruction below $T_N$, yields an additional increase of $ω_{\mathrm{pl}}$ and a splitting of the transition between the two conduction bands by about 54 meV. Our study thus reveals a complex and strongly temperature dependent multi-band low-energy response that has important implications for the study of the surface states and device applications. △ Less

Submitted 19 September, 2020; originally announced September 2020.

Comments: 16 pages, 15 figures

Journal ref: Phys. Rev. B 103, 121103 (2021)

When superconductivity does not fear magnetism: Insight into electronic structure of RbEuFe$_{4}$As$_{4}$

Authors: T. K. Kim, K. S. Pervakov, D. V. Evtushinsky, S. W. Jung, G. Poelchen, K. Kummer, V. A. Vlasenko, V. M. Pudalov, D. Roditchev, V. S. Stolyarov, D. V. Vyalikh, V. Borisov, R. Valentí, A. Ernst, S. V. Eremeev, E. V. Chulkov

Abstract: In the novel stoichiometric iron-based material RbEuFe$_{4}$As$_{4}$ superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states. Using angle-resolved photoemission spectroscopy, we reveal a complex three dimensional electronic structure and compare it with density functional theory calculations. Multiple superconducting gaps were measured on various sheets of the Fermi su… ▽ More In the novel stoichiometric iron-based material RbEuFe$_{4}$As$_{4}$ superconductivity coexists with a peculiar long-range magnetic order of Eu 4f states. Using angle-resolved photoemission spectroscopy, we reveal a complex three dimensional electronic structure and compare it with density functional theory calculations. Multiple superconducting gaps were measured on various sheets of the Fermi surface. High resolution resonant photoemission spectroscopy reveals magnetic order of the Eu 4f states deep into the superconducting phase. Both the absolute values and the anisotropy of the superconducting gaps are remarkably similar to the sibling compound without Eu, indicating that Eu magnetism does not affect the pairing of electrons. A complete decoupling between Fe- and Eu-derived states was established from their evolution with temperature, thus unambiguously demonstrating that superconducting and a long range magnetic orders exist independently from each other. The established electronic structure of RbEuFe$_{4}$As$_{4}$ opens opportunities for the future studies of the highly unorthodox electron pairing and phase competition in this family of iron-based superconductors with do**. △ Less

Submitted 3 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. B 103, 174517 (2021)

Collective excitations and universal broadening of cyclotron absorption in Dirac semimetals in a quantizing magnetic field

Authors: D. I. Yasnov, A. P. Protogenov, P. M. Echenique, E. V. Chulkov

Abstract: The spectrum of electromagnetic collective excitations in Dirac semimetals placed in a quantizing magnetic field is considered. We have found the Landau dam** regions using the energy and momentum conservation law for allowed transitions between one-particle states of electron excitations. Analysis of dispersion equations for longitudinal and transverse waves near the window boundaries in the La… ▽ More The spectrum of electromagnetic collective excitations in Dirac semimetals placed in a quantizing magnetic field is considered. We have found the Landau dam** regions using the energy and momentum conservation law for allowed transitions between one-particle states of electron excitations. Analysis of dispersion equations for longitudinal and transverse waves near the window boundaries in the Landau dam** regions reveals different types of collective excitations. We also indicate the features of universal broadening of cyclotron absorption for a magnetic field variation in systems with linear dispersion of the electron spectrum. The use of the obtained spectrum also allows us to predict a number of oscillation and resonance effects in the field of magneto-optical phenomena. △ Less

Submitted 6 July, 2020; originally announced July 2020.

Comments: 7 pages, 4 eps figures

Journal ref: Phys. Rev. B 101, (2020) 245206

Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$

Authors: A. M. Shikin, D. A. Estyunin, I. I. Klimovskikh, S. O. Filnov, E. F. Schwier, S. Kumar, K. Myamoto, T. Okuda, A. Kimura, K. Kuroda, K. Yaji, S. Shin, Y. Takeda, Y. Saitoh, Z. S. Aliev, N. T. Mamedov, I. R. Amiraslanov, M. B. Babanly, M. M. Otrokov, S. V. Eremeev, E. V. Chulkov

Abstract: Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (1… ▽ More Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments. △ Less

Submitted 9 April, 2020; originally announced April 2020.

Observation of a cubic Rashba effect in the surface spin structure of rare-earth ternary materials

Authors: D. Yu. Usachov, I. A. Nechaev, G. Poelchen, M. Güttler, E. E. Krasovskii, S. Schulz, A. Generalov, K. Kliemt, A. Kraiker, C. Krellner, K. Kummer, S. Danzenbächer, C. Laubschat, A. P. Weber, E. V. Chulkov, A. F. Santander-Syro, T. Imai, K. Miyamoto, T. Okuda, D. V. Vyalikh

Abstract: Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding… ▽ More Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k.p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments. △ Less

Submitted 5 February, 2020; originally announced February 2020.

Comments: 7 pages, 3 figures

Journal ref: Phys. Rev. Lett. 124, 237202 (2020)

Deterministic control of an antiferromagnetic spin arrangement using ultrafast optical excitation

Authors: Y. W. Windsor, A. Ernst, K. Kummer, K. Kliemt, Ch. Schüßler-Langeheine, N. Pontius, U. Staub, E. V. Chulkov, C. Krellner, D. V. Vyalikh, L. Rettig

Abstract: A central prospect of antiferromagnetic spintronics is to exploit magnetic properties that are unavailable with ferromagnets. However, this poses the challenge of accessing such properties for readout and control. To this end, light-induced manipulation of the transient ground state, e.g. by changing the magnetic anisotropy potential, opens promising pathways towards ultrafast deterministic contro… ▽ More A central prospect of antiferromagnetic spintronics is to exploit magnetic properties that are unavailable with ferromagnets. However, this poses the challenge of accessing such properties for readout and control. To this end, light-induced manipulation of the transient ground state, e.g. by changing the magnetic anisotropy potential, opens promising pathways towards ultrafast deterministic control of antiferromagnetism. Here, we use this approach to trigger a $\it{coherent}$ rotation of the entire long-range antiferromagnetic spin arrangement about a crystalline axis in $GdRh_2Si_2$ and demonstrate $\it{deterministic}$ control of this rotation upon ultrafast optical excitation. Our observations can be explained by a displacive excitation of the Gd spins$'$ local anisotropy potential by the optical excitation, allowing for a full description of this transient magnetic anisotropy potential. △ Less

Submitted 4 February, 2020; originally announced February 2020.

Journal ref: Commun Phys 3, 139 (2020)

Domain wall induced spin-polarized flat bands in antiferromagnetic topological insulators

Authors: Evgeniy K. Petrov, Vladimir N. Men'shov, Igor P. Rusinov, Martin Hoffmann, Arthur Ernst, Mikhail M. Otrokov, Vitalii K. Dugaev, Tatiana V. Menshchikova, Evgueni V. Chulkov

Abstract: A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have b… ▽ More A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological insulators. Using first-principles material design we suggest a family of intrinsic antiferromagnetic topological insulators with an in-plane sublattice magnetization and a high Néel temperature. Such systems can host domain walls in a natural manner. For these materials, we demonstrate the existence of spin-polarized flat bands in the vicinity of the Fermi level and discuss their properties and potential applications. △ Less

Submitted 17 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. B 103, 235142 (2021)

Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family

Authors: I. I. Klimovskikh, M. M. Otrokov, D. Estyunin, S. V. Eremeev, S. O. Filnov, A. Koroleva, E. Shevchenko, V. Voroshnin, I. P. Rusinov, M. Blanco-Rey, M. Hoffmann, Z. S. Aliev, M. B. Babanly, I. R. Amiraslanov, N. A. Abdullayev, V. N. Zverev, A. Kimura, O. E. Tereshchenko, K. A. Kokh, L. Petaccia, G. Di Santo, A. Ernst, P. M. Echenique, N. T. Mamedov, A. M. Shikin , et al. (1 additional authors not shown)

Abstract: Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and ma… ▽ More Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m \ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the \MBT\, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Journal ref: npj Quantum Mater. 5, 54 (2020)

Temperature driven phase transition at the antimonene/Bi2Se3 van der Waals heterostructure

Authors: Conor Hogan, Kris Holtgrewe, Fabio Ronci, Stefano Colonna, Simone Sanna, Paolo Moras, Polina Sheverdyaeva, Sanjoy Mahatha, Marco Papagno, Ziya S. Aliev, Mohammad B. Babanly, Evgeni V. Chulkov, Carlo Carbone, Roberto Flammini

Abstract: We report the discovery of a temperature induced phase transition between the αand βstructures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the βphase grows and prevails over the αphase, eventually forming a single domain that perfectly matche… ▽ More We report the discovery of a temperature induced phase transition between the αand βstructures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the βphase grows and prevails over the αphase, eventually forming a single domain that perfectly matches the surface lattice structure of bismuth selenide. First principles thermodynamics calculations of this van der Waals heterostructure explain the different temperature-dependent stability of the two phases and reveal a minimum energy transition path. Although the formation energies of free-standing α- and β-antimonene only slightly differ, the βphase is ultimately favoured in the annealed heterostructure due to an increased interaction with the substrate mediated by the perfect lattice match. △ Less

Submitted 5 June, 2019; originally announced June 2019.

Surface states and Rashba-type spin polarization in antiferromagnetic MnBi$_2$Te$_4$

Authors: R. C. Vidal, H. Bentmann, T. R. F. Peixoto, A. Zeugner, S. Moser, C. H. Min, S. Schatz, K. Kissner, M. Ünzelmann, C. I. Fornari, H. B. Vasili, M. Valvidares, K. Sakamoto, D. Mondal, J. Fujii, I. Vobornik, S. Jung, C. Cacho, T. K. Kim, R. J. Koch, C. Jozwiak, A. Bostwick, J. D. Denlinger, E. Rotenberg, J. Buck , et al. (10 additional authors not shown)

Abstract: The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals… ▽ More The layered van der Waals antiferromagnet MnBi$_2$Te$_4$ has been predicted to combine the band ordering of archetypical topological insulators such as Bi$_2$Te$_3$ with the magnetism of Mn, making this material a viable candidate for the realization of various magnetic topological states. We have systematically investigated the surface electronic structure of MnBi$_2$Te$_4$(0001) single crystals by use of spin- and angle-resolved photoelectron spectroscopy experiments. In line with theoretical predictions, the results reveal a surface state in the bulk band gap and they provide evidence for the influence of exchange interaction and spin-orbit coupling on the surface electronic structure. △ Less

Submitted 12 September, 2019; v1 submitted 28 March, 2019; originally announced March 2019.

Comments: Revised version

Journal ref: Phys. Rev. B 100, 121104 (2019)

Possible Experimental Realization of a Basic Z2 Topological Semimetal

Authors: Erik Haubold, Alexander Fedorov, Igor P. Rusinov, Tatiana V. Menshchikova, Viola Duppel, Daniel Friedrich, Florian Pielnhofer, Richard Weihrich, Arno Pfitzner, Alexander Zeugner, Anna Isaeva, Setti Thirupathaiah, Yevhen Kushnirenko, Emile Rienks, Timur Kim, Evgueni V. Chulkov, Bernd Büchner, Sergey V. Borisenko

Abstract: We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-reso… ▽ More We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion in the \textit{T}-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron- and hole-like carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material's application potential. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Journal ref: APL Materials 7, 121106 (2019)

Unique thickness-dependent properties of the van der Waals interlayer antiferromagnet $\mathrm{MnBi_2Te_4}$ films

Authors: Mikhail M. Otrokov, Igor P. Rusinov, María Blanco-Rey, Martin Hoffmann, Alexandra Yu. Vyazovskaya, Sergey V. Eremeev, Arthur Ernst, Pedro M. Echenique, Andrés Arnau, Evgueni V. Chulkov

Abstract: Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple lay… ▽ More Using density functional theory and Monte Carlo calculations, we study the thickness dependence of the magnetic and electronic properties of a van der Waals interlayer antiferromagnet in the two-dimensional limit. Considering $\mathrm{MnBi_2Te_4}$ as a model material, we find it to demonstrate a remarkable set of thickness-dependent magnetic and topological transitions. While a single septuple layer block of $\mathrm{MnBi_2Te_4}$ is a topologically trivial ferromagnet, the thicker films made of an odd (even) number of blocks are uncompensated (compensated) interlayer antiferromagnets, which show wide bandgap quantum anomalous Hall (zero plateau quantum anomalous Hall) states. Thus, $\mathrm{MnBi_2Te_4}$ is the first stoichiometric material predicted to realize the zero plateau quantum anomalous Hall state intrinsically. This state has been theoretically shown to host the exotic axion insulator phase. △ Less

Submitted 11 October, 2018; originally announced October 2018.

Journal ref: Phys. Rev. Lett. 122, 107202 (2019)

Highly-ordered wide bandgap materials for quantized anomalous Hall and magnetoelectric effects

Authors: Mikhail M. Otrokov, Tatiana V. Menshchikova, Maia G. Vergniory, Igor P. Rusinov, Alexandra Yu. Vyazovskaya, Yury M. Koroteev, Gustav Bihlmayer, Arthur Ernst, Pedro M. Echenique, Andrés Arnau, Evgueni V. Chulkov

Abstract: An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these… ▽ More An interplay of spin-orbit coupling and intrinsic magnetism is known to give rise to the quantum anomalous Hall and topological magnetoelectric effects under certain conditions. Their realization could open access to low power consumption electronics as well as many fundamental phenomena like image magnetic monopoles, Majorana fermions and others. Unfortunately, being realized very recently, these effects are only accessible at extremely low temperatures and the lack of appropriate materials that would enable the temperature increase is a most severe challenge. Here, we propose a novel material platform with unique combination of properties making it perfectly suitable for the realization of both effects at elevated temperatures. The key element of the computational material design is an extension of a topological insulator (TI) surface by a thin film of ferromagnetic insulator, which is both structurally and compositionally compatible with the TI. Following this proposal we suggest a variety of specific systems and discuss their numerous advantages, in particular wide band gaps with the Fermi level located in the gap. △ Less

Submitted 29 September, 2018; originally announced October 2018.

Comments: The version of the article accepted for publication including all changes made as a result of the peer review process

Journal ref: 2D Mater. 4, 025082 (2017)

Competing rhombohedral and monoclinic crystal structures in Mn$Pn_2Ch_4$ compounds: an {\em ab-initio} study

Authors: S. V. Eremeev, M. M. Otrokov, E. V. Chulkov

Abstract: Based on the relativistic spin-polarized density functional theory calculations we investigate the crystal structure, electronic and magnetic properties of a family MnPn2Ch4 compounds, where pnictogen metal atoms (Pn) are Sb and Bi; chalcogens (Ch) are Se, Te. We show that in the series the compounds of this family with heavier elements prefer to adopt rhombohedral crystal structure composed of we… ▽ More Based on the relativistic spin-polarized density functional theory calculations we investigate the crystal structure, electronic and magnetic properties of a family MnPn2Ch4 compounds, where pnictogen metal atoms (Pn) are Sb and Bi; chalcogens (Ch) are Se, Te. We show that in the series the compounds of this family with heavier elements prefer to adopt rhombohedral crystal structure composed of weakly bonded septuple monoatomic layers while those with lighter elements tend to be in the monoclinic structure. Irrespective of the crystal structure all compounds of the MnPn2Ch4 series demonstrate a weak energy gain (of a few meV per formula unit or even smaller than meV) for antiferromagnetic (AFM) coupling for magnetic moments on Mn atoms with respect to their ferromagnetic (FM) state. For rhombohedral structures the interlayer AFM coupling is preferable while in monoclinic phases intralayer AFM configuration with ferromagnetic ordering along the Mn chain and antiferromagnetic ordering between the chains has a minimum energy. Over the series the monoclinic compounds are characterized by substantially wider bandgap than compounds with rhombohedral structure. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Journal ref: J Alloys Compd 709, 172 (2017)

Prediction and observation of the first antiferromagnetic topological insulator

Authors: Mikhail M. Otrokov, Ilya I. Klimovskikh, Hendrik Bentmann, Alexander Zeugner, Ziya S. Aliev, Sebastian Gass, Anja U. B. Wolter, Alexandra V. Koroleva, Dmitry Estyunin, Alexander M. Shikin, María Blanco-Rey, Martin Hoffmann, Alexandra Yu. Vyazovskaya, Sergey V. Eremeev, Yury M. Koroteev, Imamaddin R. Amiraslanov, Mahammad B. Babanly, Nazim T. Mamedov, Nadir A. Abdullayev, Vladimir N. Zverev, Bernd Büchner, Eike F. Schwier, Shiv Kumar, Akio Kimura, Luca Petaccia , et al. (12 additional authors not shown)

Abstract: Despite immense advances in the field of topological materials, the antiferromagnetic topological insulator (AFMTI) state, predicted in 2010, has been resisting experimental observation up to now. Here, using density functional theory and Monte Carlo method we predict and by means of structural, transport, magnetic, and angle-resolved photoemission spectroscopy measurements confirm for the first t… ▽ More Despite immense advances in the field of topological materials, the antiferromagnetic topological insulator (AFMTI) state, predicted in 2010, has been resisting experimental observation up to now. Here, using density functional theory and Monte Carlo method we predict and by means of structural, transport, magnetic, and angle-resolved photoemission spectroscopy measurements confirm for the first time realization of the AFMTI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($Θ$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S=ΘT_{1/2}$, which gives rise to the $Z_2$ topological classification of AFM insulators, $Z_2$ being equal to 1 for this material. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ features a giant bandgap in the topological surface state thus representing an ideal platform for the observation of such long-sought phenomena as the quantized magnetoelectric coupling and intrinsic axion insulator state. △ Less

Submitted 19 September, 2018; originally announced September 2018.

Journal ref: Nature 576, 416-422 (2019)

Instability of the topological surface state in Bi$_2$Se$_3$ upon deposition of gold

Authors: A. Polyakov, C. Tusche, M. Ellguth, E. D. Crozier, K. Mohseni, M. M. Otrokov, X. Zubizarreta, M. G. Vergniory, M. Geilhufe, E. V. Chulkov, A. Ernst, H. L. Meyerheim, S. S. P. Parkin

Abstract: Momentum resolved photoemission spectroscopy indicates the instability of the Dirac surface state upon deposition of gold on the (0001) surface of the topological insulator Bi$_2$Se$_3$. Based on the structure model derived from extended x-ray absorption fine structure experiments showing that gold atoms substitute bismuth atoms, first principles calculations provide evidence that a gap appears du… ▽ More Momentum resolved photoemission spectroscopy indicates the instability of the Dirac surface state upon deposition of gold on the (0001) surface of the topological insulator Bi$_2$Se$_3$. Based on the structure model derived from extended x-ray absorption fine structure experiments showing that gold atoms substitute bismuth atoms, first principles calculations provide evidence that a gap appears due to hybridization of the surface state with gold d-states near the Fermi level. Our findings provide new insights into the mechanisms affecting the stability of the surface state. △ Less

Submitted 10 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures

Journal ref: Physical Review B 95, 180202(R), 2017

Probing topological insulators surface states via plasma-wave Terahertz detection

Authors: Leonardo Viti, Dominique Coquillat, Antonio Politano, Konstantin A. Kokh, Ziya S. Aliev, Mahammad B. Babanly, Oleg E. Tereshchenko, Wojciech Knap, Evgueni V. Chulkov, Miriam S. Vitiello

Abstract: Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone… ▽ More Topological insulators (TIs) represent a novel quantum state of matter, characterized by edge or surface-states, showing up on the topological character of the bulk wave functions. Allowing electrons to move along their surface, but not through their inside, they emerged as an intriguing material platform for the exploration of exotic physical phenomena, somehow resembling the graphene Dirac-cone physics, as well as for exciting applications in optoelectronics, spintronics, nanoscience, low-power electronics, and quantum computing. Investigation of topological surface states (TSS) is conventionally hindered by the fact that in most of experimental conditions the TSS properties are mixed up with those of bulk-states. Here, we devise a novel tool to unveil TSS and to probe related plasmonic effects. By engineering Bi2Te(3-x)Sex stoichiometry, and by gating the surface of nanoscale field-effect-transistors, exploiting thin flakes of Bi2Te2.2Se0.8 or Bi2Se3, we provide the first demonstration of room-temperature Terahertz (THz) detection mediated by over-damped plasma-wave oscillations on the "activated" TSS of a Bi2Te2.2Se0.8 flake. The reported detection performances allow a realistic exploitation of TSS for large-area, fast imaging, promising superb impacts on THz photonics. △ Less

Submitted 27 April, 2018; originally announced April 2018.

Journal ref: Nano Lett. 2016, 16, 80-87

Spectroscopic perspective on the interplay between electronic and magnetic properties of magnetically doped topological insulators

Authors: Jonas A. Krieger, Cui-Zu Chang, Marius-Adrian Husanu, Daria Sostina, Arthur Ernst, Mikhail M. Otrokov, Thomas Prokscha, Thorsten Schmitt, Andreas Suter, Maia Garcia Vergniory, Evgueni V. Chulkov, Jagadeesh S. Moodera, Vladimir N. Strocov, Zaher Salman

Abstract: We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at do** levels x $\gtrsim$ 0.16. The observed magnetic transi… ▽ More We combine low energy muon spin rotation (LE-$μ$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We find that one achieves a full magnetic volume fraction in samples of (V/Cr)$_x$(Bi,Sb)$_{2-x}$Te$_3$ at do** levels x $\gtrsim$ 0.16. The observed magnetic transition is not sharp in temperature indicating a gradual magnetic ordering. We find that the evolution of magnetic ordering is consistent with formation of ferromagnetic islands which increase in number and/or volume with decreasing temperature. Resonant ARPES at the V $L_3$ edge reveals a nondispersing impurity band close to the Fermi level as well as V weight integrated into the host band structure. Calculations within the coherent potential approximation of the V contribution to the spectral function confirm that this impurity band is caused by V in substitutional sites. The implications of our results on the observation of the quantum anomalous Hall effect at mK temperatures are discussed. △ Less

Submitted 28 November, 2017; v1 submitted 17 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 96, 184402 (2017)

Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer

Authors: Toru Hirahara, Sergey V. Eremeev, Tetsuroh Shirasawa, Yuma Okuyama, Takayuki Kubo, Ryosuke Nakanishi, Ryota Akiyama, Akari Takayama, Tetsuya Hajiri, Shin-ichiro Ideta, Masaharu Matsunami, Kazuki Sumida, Koji Miyamoto, Yasumasa Takagi, Kiyohisa Tanaka, Taichi Okuda, Toshihiko Yokoyama, Shin-ichi Kimura, Shuji Hasegawa, Evgueni V. Chulkov

Abstract: Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the… ▽ More Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on do** magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3 heterostructure shows ferromagnetism up to room temperature and a clear Dirac-cone gap opening of ~100 meV without any other significant changes in the rest of the band structure. It can be considered as a result of the direct interaction of the surface Dirac cone and the magnetic layer rather than a magnetic proximity effect. This spontaneously formed self-assembled heterostructure with a massive Dirac spectrum, characterized by a nontrivial Chern number C = -1, has a potential to realize the QAHE at significantly higher temperatures than reported up to now and can serve as a platform for develo** future " topotronics" devices. △ Less

Submitted 6 September, 2017; originally announced September 2017.

Comments: 13pages, 4 figures

Journal ref: Nano Letters 17, 3493 (2017)

Synchrotron radiation induced magnetization in magnetically-doped and pristine topological insulators

Authors: A. M. Shikin, D. M. Sostina, A. A. Rybkina, V. Yu. Voroshnin, I. I. Klimovskikh, A. G. Rybkin, D. A. Estyunin, K. A. Kokh, O. E. Tereshchenko, L. Petaccia, G. Di Santo, P. N. Skirdkov, K. A. Zvezdin, A. K. Zvezdin, A. Kimura, E. V. Chulkov, E. E. Krasovskii

Abstract: Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized… ▽ More Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized synchrotron radiation (SR) is followed by the hole-generated uncompensated spin accumulation and the SR-induced magnetization via the spin-torque effect. We show that the photoexcitation of the DC is asymmetric, that it varies with the photon energy, and that it practically does not change during the relaxation. We find a relation between the photoexcitation asymmetry, the generated spin accumulation and the induced spin polarization of the DC and V 3d states. Experimentally the SR-generated in-plane and out-of-plane magnetization is confirmed by the $k_{\parallel}$-shift of the DC position and by the splitting of the states at the Dirac point even above the Curie temperature. Theoretical predictions and estimations of the measurable physical quantities substantiate the experimental results. △ Less

Submitted 27 July, 2017; originally announced July 2017.

Comments: 17 pages, 8 figures

Journal ref: Phys. Rev. B 97, 245407 (2018)

2D and 3D topological phases in BiTe$X$ compounds

Authors: S. V. Eremeev, I. A. Nechaev, E. V. Chulkov

Abstract: Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band insulator BiTeI. Here, we study the edge states in the free-standing Bi$_2$Te$_2$I$_2$ sextuple layer (SL) and the electronic structure of the Bi$_2$Te$_2$I$_2$ SL on… ▽ More Recently, it was shown that quantum spin Hall insulator (QSHI) phase with a gap wide enough for practical applications can be realized in the ultra thin films constructed from two inversely stacked structural elements of trivial band insulator BiTeI. Here, we study the edge states in the free-standing Bi$_2$Te$_2$I$_2$ sextuple layer (SL) and the electronic structure of the Bi$_2$Te$_2$I$_2$ SL on the natural BiTeI substrate. We show that the topological properties of the Bi$_2$Te$_2$I$_2$ SL on this substrate keep $\mathbb Z_2$ invariant. We also demonstrate that ultra thin centrosymmetric films constructed in the similar manner but from related material BiTeBr are trivial band insulators up to five-SL film thickness. In contrast to Bi$_2$Te$_2$I$_2$ for which the stacking of nontrivial SLs in 3D limit gives a strong topological insulator (TI) phase, strong TI is realized in 3D Bi$_2$Te$_2$Br$_2$ in spite of the SL is trivial. For the last material of the BiTe$X$ ($X$=I,Br,Cl) series, BiTeCl, both 2D and 3D centrosymmetric phases are characterized by topologically trivial band structure. △ Less

Submitted 25 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 155309 (2017)

Proximity Eliashberg theory of electrostatic field-effect-do** in superconducting films

Authors: G. A. Ummarino, E. Piatti, D. Daghero, R. S. Gonnelli, Irina Yu. Sklyadneva, E. V. Chulkov, R. Heid

Abstract: We calculate the effect of a static electric field on the critical temperature of a s-wave one band superconductor in the framework of proximity effect Eliashberg theory. In the weak electrostatic field limit the theory has no free parameters while, in general, the only free parameter is the thickness of the surface layer where the electric field acts. We conclude that the best situation for incre… ▽ More We calculate the effect of a static electric field on the critical temperature of a s-wave one band superconductor in the framework of proximity effect Eliashberg theory. In the weak electrostatic field limit the theory has no free parameters while, in general, the only free parameter is the thickness of the surface layer where the electric field acts. We conclude that the best situation for increasing the critical temperature is to have a very thin film of a superconducting material with a strong increase of electron-phonon (boson) constant upon charging. △ Less

Submitted 26 April, 2017; originally announced April 2017.

Comments: 9 pages, 5 figures

Journal ref: Phys. Rev. B 96, 064509 (2017)

Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures

Authors: Florian Pielnhofer, Tatiana V. Menshchikova, Igor P. Rusinov, Alexander Zeugner, Irina Yu. Sklyadneva, Rolf Heid, Klaus-Peter Bohnen, Pavlo Golub, Alexey I. Baranov, Eugeni V. Chulkov, Arno Pfitzner, Michael Ruckd, Anna Isaeva

Abstract: State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by covalent interactions within a 3D periodic structure, is predicted to constitute a 3D strong topological insulato… ▽ More State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by covalent interactions within a 3D periodic structure, is predicted to constitute a 3D strong topological insulator with Z2 = 1;(111) (primitive cell, rhombohedral setting) in the structural family of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. The host structure GaGeTe is a long-known bulk semiconductor; the "heavy", isostructural analogues InSnTe and GaSnTe are predicted to be dynamically stable. Spin-orbit interaction in InSnTe opens a small topological band gap with inverted gap edges that are mainly composed of the In-5s and Te-5p states. Our simulations classify GaSnTe as a semimetal with topological properties, whereas the verdict for GaGeTe is not conclusive and urges further experimental verification. AXTe family structures can be regarded as stacks of 2D layered cut-outs from a zincblende-type lattice and are composed by elements that are broadly used in modern semiconductor devices; hence they represent an accessible, attractive alternative for applications in spintronics. The layered nature of AXTe should facilitate exfoliation of its hextuple layers and manufacture of heterostuctures. △ Less

Submitted 24 April, 2017; originally announced April 2017.

Comments: J. Mater. Chem. C, 2017, Accepted Manuscript

Quantum spin Hall insulators in centrosymmetric thin films composed from topologically trivial BiTeI trilayers

Authors: I. A. Nechaev, S. V. Eremeev, E. E. Krasovskii, P. M. Echenique, E. V. Chulkov

Abstract: The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a breakthrough in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that qu… ▽ More The quantum spin Hall insulators predicted ten years ago and now experimentally observed are instrumental for a breakthrough in nanoelectronics due to non-dissipative spin-polarized electron transport through their edges. For this transport to persist at normal conditions, the insulators should possess a sufficiently large band gap in a stable topological phase. Here, we theoretically show that quantum spin Hall insulators can be realized in ultra-thin films constructed from a trivial band insulator with strong spin-orbit coupling. The thinnest film with an inverted gap large enough for practical applications is a centrosymmetric sextuple layer built out of two inversely stacked non-centrosymmetric BiTeI trilayers. This nontrivial sextuple layer turns out to be the structure element of an artificially designed strong three-dimensional topological insulator Bi$_2$Te$_2$I$_2$. We reveal general principles of how a topological insulator can be composed from the structure elements of the BiTeX family (X=I, Br, Cl), which opens new perspectives towards engineering of topological phases. △ Less

Submitted 29 March, 2017; v1 submitted 22 July, 2016; originally announced July 2016.

Comments: 6 pages, 4 figures

Journal ref: Scientific Reports 7, 43666 (2017)

Pressure effects on crystal and electronic structure of bismuth tellurohalides

Authors: I. P. Rusinov, T. V. Menshchikova, I. Yu. Sklyadneva, R. Heid, K. -P. Bohnen, E. V. Chulkov

Abstract: We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized through the formation of an intermediate phase, a Weyl semimetal, that leads to modification of surface state dispersions. In the topologically trivial phase, the… ▽ More We study the possibility of pressure-induced transitions from a normal semiconductor to a topological insulator (TI) in bismuth tellurohalides using density functional theory and tight-binding method. In BiTeI this transition is realized through the formation of an intermediate phase, a Weyl semimetal, that leads to modification of surface state dispersions. In the topologically trivial phase, the surface states exhibit a Bychkov-Rashba type dispersion. The Weyl semimetal phase exists in a narrow pressure interval of 0.2 GPa. After the Weyl semimetal--TI transition occurs, the surface electronic structure is characterized by gapless states with linear dispersion. The peculiarities of the surface states modification under pressure depend on the band-bending effect. We have also calculated the frequencies of Raman active modes for BiTeI in the proposed high-pressure crystal phases in order to compare them with available experimental data. Unlike BiTeI, in BiTeBr and BiTeCl the topological phase transition does not occur. In BiTeBr, the crystal structure changes with pressure but the phase remains a trivial one. However, the transition appears to be possible if the low-pressure crystal structure is retained. In BiTeCl under pressure, the topological phase does not appear up to 18 GPa due to a relatively large band gap width in this compound. △ Less

Submitted 19 July, 2016; originally announced July 2016.

Odd-frequency superconductivity induced in topological insulators with and without hexagonal war**

Authors: A. S. Vasenko, A. A. Golubov, V. M. Silkin, E. V. Chulkov

Abstract: We study the effect of the Fermi surface anisotropy on the odd-frequency spin-triplet pairing component of the induced pair potential. We consider a superconductor/ ferromagnetic insulator (S/FI) hybrid structure formed on the 3D topological insulator (TI) surface. In this case three ingredients insure the possibility of the odd-frequency pairing: 1) the topological surface states, 2) the induced… ▽ More We study the effect of the Fermi surface anisotropy on the odd-frequency spin-triplet pairing component of the induced pair potential. We consider a superconductor/ ferromagnetic insulator (S/FI) hybrid structure formed on the 3D topological insulator (TI) surface. In this case three ingredients insure the possibility of the odd-frequency pairing: 1) the topological surface states, 2) the induced pair potential, and 3) the magnetic moment of a nearby ferromagnetic insulator. We take into account the strong anisotropy of the Dirac cone in topological insulators when the chemical potential lies well above the Dirac cone and its constant energy contour has a snowflake shape. Within this model, we propose that the S/FI boundary should be properly aligned with respect to the snowflake constant energy contour to have an odd-frequency symmetry of the corresponding pairing component and to insure the Majorana bound state at the S/FI boundary. For arbitrary orientation of the boundary the Majorana bound state is absent. This provides a selection rule to the realization of Majorana modes in S/FI hybrid structures, formed on the topological insulator surface. △ Less

Submitted 13 April, 2017; v1 submitted 2 June, 2016; originally announced June 2016.

Comments: 7 pages, 2 figures

Adsorption geometry and electronic properties of flat-lying monolayers of tetracene on the Ag(111) surface

Authors: N. L. Zaitsev, I. A. Nechaev, U. Höfer, E. V. Chulkov

Abstract: The geometrical and electronic properties of the monolayer (ML) of tetracene (Tc) molecules on Ag(111) are systematically investigated by means of DFT calculations with the use of localized basis set. The bridge and hollow adsorption positions of the molecule in the commensurate $γ$-Tc/Ag(111) are revealed to be the most stable and equally favorable irrespective to the approximation chosen for the… ▽ More The geometrical and electronic properties of the monolayer (ML) of tetracene (Tc) molecules on Ag(111) are systematically investigated by means of DFT calculations with the use of localized basis set. The bridge and hollow adsorption positions of the molecule in the commensurate $γ$-Tc/Ag(111) are revealed to be the most stable and equally favorable irrespective to the approximation chosen for the exchange-correlation functional. The binding energy is entirely determined by the long-range dispersive interaction. The former lowest unoccupied orbital remains being unoccupied in the case of $γ$-Tc/Ag(111) as well as in the $α$-phase with increased coverage. The unit cell of the $α$-phase with point-on-line registry was adapted for calculations based on the available experimental data and the computed structures of the $γ$-phase. The calculated position of the Tc/Ag(111) interface state is found to be noticeably dependent on the lattice constant of the substrate, however its energy shift with respect to the Shockley surface state of the unperturbed clean side of the slab is sensitive only to the adsorption distance and in good agreement with the experimentally measured energy shift. △ Less

Submitted 25 May, 2016; originally announced May 2016.

Comments: 9 pages, 4 figures

Journal ref: Phys. Rev. B 94, 155452 (2016)

Time-Reversal-Breaking Weyl Fermions in Magnetic Heusler Alloys

Authors: Zhijun Wang, M. G. Vergniory, S. Kushwaha, Max Hirschberger, E. V. Chulkov, A. Ernst, N. P. Ong, Robert J. Cava, B. Andrei Bernevig

Abstract: Weyl fermions have recently been observed in several time-reversal-invariant semimetals and photonics materials with broken inversion symmetry. These systems are expected to have exotic transport properties such as the chiral anomaly. However, most discovered Weyl materials possess a substantial number of Weyl nodes close to the Fermi level that give rise to complicated transport properties. Here… ▽ More Weyl fermions have recently been observed in several time-reversal-invariant semimetals and photonics materials with broken inversion symmetry. These systems are expected to have exotic transport properties such as the chiral anomaly. However, most discovered Weyl materials possess a substantial number of Weyl nodes close to the Fermi level that give rise to complicated transport properties. Here we predict, for the first time, a new family of Weyl systems defined by broken time-reversal symmetry, namely, Co-based magnetic Heusler materials XCo2Z (X = IVB or VB; Z = IVA or IIIA). To search for Weyl fermions in the centrosymmetric magnetic systems, we recall an easy and practical inversion invariant, which has been calculated to be -1, guaranteeing the existence of an odd number of pairs of Weyl fermions. These materials exhibit, when alloyed, only two Weyl nodes at the Fermi level - the minimum number possible in a condensed matter system. The Weyl nodes are protected by the rotational symmetry along the magnetic axis and separated by a large distance (of order 2$π$) in the Brillouin zone. The corresponding Fermi arcs have been calculated as well. This discovery provides a realistic and promising platform for manipulating and studying the magnetic Weyl physics in experiments. △ Less

Submitted 30 November, 2016; v1 submitted 1 March, 2016; originally announced March 2016.

Comments: Published version

Journal ref: Phys. Rev. Lett. 117, 236401 (2016)

Electron-phonon relaxation and excited electron distribution in gallium nitride

Authors: V. P. Zhukov, V. G. Tyuterev, P. M. Echenique, E. V. Chulkov

Abstract: We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. I… ▽ More We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy 'tail' covers largely the conduction band. The shape of the high-energy 'tail' strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trap**. We apply the theory to the calculation of a non-equilibrium distribution of electrons in irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of electron-phonon scattering is comparable with the rate of recombination and trap** then the contribution of the non-Fermi 'tail' is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can affect essentially the charge transport in the irradiated and highly doped semiconductors. △ Less

Submitted 2 December, 2015; originally announced December 2015.

Comments: 15 pages, 6 figures

Termination-dependent surface properties in the giant-Rashba semiconductors BiTeX (X = Cl, Br, I)

Authors: Sebastian Fiedler, Thomas Bathon, Sergey V. Eremeev, Oleg E. Tereshchenko, Konstantin A. Kokh, Evgueni V. Chulkov, Paolo Sessi, Hendrik Bentmann, Matthias Bode, Friedrich Reinert

Abstract: The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tu… ▽ More The non-centrosymmetric semiconductors BiTeX (X = Cl, Br, I) show large Rashba-type spin-orbit splittings in their electronic structure making them candidate materials for spin-based electronics. However, BiTeI(0001) single crystal surfaces usually consist of stacking-fault-induced domains of Te and I terminations implying a spatially inhomogeneous electronic structure. Here we combine scanning tunneling microscopy (STM), photoelectron spectroscopy (ARPES, XPS) and density functional theory (DFT) calculations to systematically investigate the structural and electronic properties of BiTeX(0001) surfaces. For X = Cl, Br we observe macroscopic single-terminated surfaces. We discuss chemical characteristics among the three materials in terms of bonding character, surface electronic structure, and surface morphology. △ Less

Submitted 20 November, 2015; originally announced November 2015.

Comments: 12 pages, 5 figures

Inelastic Decay of Electrons in the Shockley-type Metal-Organic Interface States

Authors: S. S. Tsirkin, N. L. Zaitsev, I. A. Nechaev, R. Tonner, U. Hoefer, E. V. Chulkov

Abstract: We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer depo… ▽ More We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer deposition plays a minor role in the phase space for electron decay, and hence weakly affects the resulting lifetimes. The presence of the unoccupied molecular states below the IS gives a small contribution to the IS decay rate mostly determined by the change of the phase space of bulk states upon the energy shift of the IS. The calculated lifetimes follow the experimentally observed trends. In particular, we explain the trend of the unusual increase of the IS lifetimes with rising temperature. △ Less

Submitted 27 July, 2015; originally announced July 2015.

Comments: 8 pages, 5 figures

Journal ref: Phys. Rev. B 92, 235434 (2015)

Non-Dirac topological surface states in (SnTe)$_{n\geq2}$(Bi$_2$Te$_3$)$_{m=1}$

Authors: S. V. Eremeev, T. V. Menshchikova, I. V. Silkin, M. G. Vergniory, P. M. Echenique, E. V. Chulkov

Abstract: A new type of topological spin-helical surface states was discovered in layered van der Waals bonded (SnTe)$_{n=2,3}$(Bi$_2$Te$_3$)$_{m=1}$ compounds which comprise two covalently bonded band inverted subsystems, SnTe and Bi$_2$Te$_3$, within a building block. This novel topological states demonstrate non-Dirac dispersion within the band gap. The dispersion of the surface state has two linear sect… ▽ More A new type of topological spin-helical surface states was discovered in layered van der Waals bonded (SnTe)$_{n=2,3}$(Bi$_2$Te$_3$)$_{m=1}$ compounds which comprise two covalently bonded band inverted subsystems, SnTe and Bi$_2$Te$_3$, within a building block. This novel topological states demonstrate non-Dirac dispersion within the band gap. The dispersion of the surface state has two linear sections of different slope with shoulder feature between them. Such a dispersion of the topological surface state enables effective switch of the velocity of topological carriers by means of applying an external electric field. △ Less

Submitted 28 May, 2015; originally announced May 2015.

Journal ref: Phys. Rev. B 91, 245145 (2015)

Response of the topological surface state to surface disorder in TlBiSe$_2$

Authors: Florian Pielmeier, Gabriel Landolt, Bartosz Slomski, Stefan Muff, Julian Berwanger, Andreas Eich, Alexander A. Khajetoorians, Jens Wiebe, Ziya S. Aliev, Mahammad B. Babanly, Roland Wiesendanger, Jürg Osterwalder, Evgeniy V. Chulkov, Franz J. Giessibl, J. Hugo Dil

Abstract: Through a combination of experimental techniques we show that the topmost layer of the topo- logical insulator TlBiSe$_2$ as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands can not be re- garded as a cle… ▽ More Through a combination of experimental techniques we show that the topmost layer of the topo- logical insulator TlBiSe$_2$ as prepared by cleavage is formed by irregularly shaped Tl islands at cryogenic temperatures and by mobile Tl atoms at room temperature. No trivial surface states are observed in photoemission at low temperatures, which suggests that these islands can not be re- garded as a clear surface termination. The topological surface state is, however, clearly resolved in photoemission experiments. This is interpreted as a direct evidence of its topological self-protection and shows the robust nature of the Dirac cone like surface state. Our results can also help explain the apparent mass acquisition in S-doped TlBiSe$_2$. △ Less

Submitted 4 February, 2015; originally announced February 2015.

Comments: 16 pages, 5 figures

Journal ref: New J. Phys. 17 (2015) 023067

Origin of inverse Rashba-Edelstein effect at Cu/Bi interface using lateral spin valves

Authors: M. Isasa, M. C. Martínez-Velarte, E. Villamor, C. Magén, L. Morellón, J. M. De Teresa, M. R. Ibarra, G. Vignale, E. V. Chulkov, E. E. Krasovskii, L. E. Hueso, F. Casanova

Abstract: The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi)lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to ultra-short spin diffusion lengths. A spin-to-charge current conversion is measured, which is attributed to the inverse Rashba-Edelstein effect at the Cu/Bi inte… ▽ More The spin transport and spin-to-charge current conversion properties of bismuth are investigated using permalloy/copper/bismuth (Py/Cu/Bi)lateral spin valve structures. The spin current is strongly absorbed at the surface of Bi, leading to ultra-short spin diffusion lengths. A spin-to-charge current conversion is measured, which is attributed to the inverse Rashba-Edelstein effect at the Cu/Bi interface. The spin-current-induced charge current is found to change direction with increasing temperature. A theoretical analysis relates this behavior to the complex spin structure and dispersion of the surface states at the Fermi energy. The understanding of this phenomenon opens novel possibilities to exploit spin-orbit coupling to create, manipulate, and detect spin currents in 2D systems. △ Less

Submitted 25 December, 2015; v1 submitted 30 September, 2014; originally announced September 2014.

Comments: 10 pages, 4 figures for the main text + 6 pages, 6 figures for the supplementary information

Journal ref: Phys. Rev. B 93, 014420 (2016)