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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Lanthanum Oxyhalide Monolayers: An Exceptional Dielectric Companion to Two-Dimensional Semiconductors
Authors:
Zhuoling Jiang,
Tong Su,
Cherq Chua,
L. K. Ang,
Chun Zhang,
Liemao Cao,
Yee Sin Ang
Abstract:
Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D dielectrics that significantly outperforms HfO$_2$ even in the monolyaer limit, we investigate the interface properties between LaOX and the archetypal…
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Two-dimensional (2D) layered dielectrics offers a compelling route towards the design of next-generation ultimately compact nanoelectronics. Motivated by recent high-throughput computational prediction of LaO$X$ ($X$ = Br, Cl) as an exceptional 2D dielectrics that significantly outperforms HfO$_2$ even in the monolyaer limit, we investigate the interface properties between LaOX and the archetypal 2D semiconductors of monolayer transition metal dichacolgenides (TMDCs) $M$S$_2$ ($M$ = Mo, W) using first-principle density functional theory simulations. We show that LaO$X$ monolayers interacts weakly with $M$S$_2$ via van der Waals forces with negligible hybridization and interfacial charge transfer, thus conveniently preserving the electronic properties of 2D TMDCs upon contact formation. The conduction and valance band offsets of the interfaces exhibit a sizable value ranging from 0.7 to 1.4 eV, suggesting the capability of LaO$X$ as a gate dielectric materials. Based on Murphy-Good electron emission model, we demonstrate that LaOCl/MoS$_2$ is a versatile dielectric/semiconductor combinations that are compatible to both NMOS and PMOS applications with leakage current lower than $10^{-7}$ Acm$^{-2}$, while LaO$X$/WS$_2$ is generally compatible with PMOS application. The presence of an interfacial tunneling potential barrier at the van der Waals gap further provide an additional mechanism to suppress the leakage current. Our findings reveal the role LaO$X$ as an excellent dielectric companion to 2D TMDC and shall provide useful insights for leveraging the dielectric strength of LaO$X$ in the design of high-performance 2D nanodevices.
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Submitted 2 November, 2022; v1 submitted 31 October, 2022;
originally announced October 2022.
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Modeling of electric double layer at solid-liquid interface with spatial complexity
Authors:
Cherq Chua,
Chun Yun Kee,
L. K. Ang,
Yee Sin Ang
Abstract:
Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB…
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Electrical double layer (EDL) is formed when an electrode is in contact with an electrolyte solution, and is widely used in biophysics, electrochemistry, polymer solution and energy storage. Poisson-Boltzmann (PB) coupled equations provides the foundational framework for modeling electrical potential and charge distribution at EDL. In this work, based on fractional calculus, we reformulate the PB equations (with and without steric effects) by introducing a phenomenal parameter $D$ (with a value between 0 and 1) to account for the spatial complexity due to impurities in EDL. The electrical potential and ion charge distribution for different $D$ are investigated. At $D$ = 1, the model recover the classical findings of ideal EDL. The electrical potential decays slowly at $D <$1, thus suggesting a wider region of saturated layer under fixed surface potential in the presence of spatial complexity. The fractional-space generalized model developed here provides a useful tool to account for spatial complexity effects which are not captured in the classic full-dimensional models.
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Submitted 1 March, 2022;
originally announced March 2022.
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Energy dissipation in composites with hybrid nacre-like helicoidal microstructures
Authors:
Xin Ying Chan,
Clarence Chua,
Sharlene Tan,
Hortense Le Ferrand
Abstract:
Natural ceramic composites present complex microstructures that lead to tortuous crack paths and confer them high toughness. Current microreinforced composites do not yet reach the same level of complexity in their microstructures, resulting in poorer properties. To achieve complex microstructuration, magnetically-assisted slip casting (MASC) was conducted using a setup with 4 degrees of freedom.…
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Natural ceramic composites present complex microstructures that lead to tortuous crack paths and confer them high toughness. Current microreinforced composites do not yet reach the same level of complexity in their microstructures, resulting in poorer properties. To achieve complex microstructuration, magnetically-assisted slip casting (MASC) was conducted using a setup with 4 degrees of freedom. Among all possible microstructures, a hybrid design between nacre-like and helicoidal arrangements was selected due to its ability to tilt and twist the crack path. The hybrid microstructured specimen fabricated, consisting of aluminum oxide micro platelets in a silicone matrix, were tested under compression and their mechanical performance compared. Although nacre-like composites exhibited the highest strength and toughness, helicoidal hybrids could show some ductility and higher stiffness. The fabrication strategy proposed here could thus be a simple route to study more complex microstructures in view of increasing the toughness of microplatelet reinforced composites.
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Submitted 3 January, 2022;
originally announced January 2022.
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Flop**-mode electric dipole spin resonance in phosphorus donor qubits in silicon
Authors:
F. N. Krauth,
S. K. Gorman,
Y. He,
M. T. Jones,
P. Macha,
S. Kocsis,
C. Chua,
B. Voisin,
S. Rogge,
R. Rahman,
Y. Chung,
M. Y. Simmons
Abstract:
Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combi…
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Single spin qubits based on phosphorus donors in silicon are a promising candidate for a large-scale quantum computer. Despite long coherence times, achieving uniform magnetic control remains a hurdle for scale-up due to challenges in high-frequency magnetic field control at the nanometre-scale. Here, we present a proposal for a flop**-mode electric dipole spin resonance qubit based on the combined electron and nuclear spin states of a double phosphorus donor quantum dot. The key advantage of utilising a donor-based system is that we can engineer the number of donor nuclei in each quantum dot. By creating multi-donor dots with antiparallel nuclear spin states and multi-electron occupation we can minimise the longitudinal magnetic field gradient, known to couple charge noise into the device and dephase the qubit. We describe the operation of the qubit and show that by minimising the hyperfine interaction of the nuclear spins we can achieve $π/2-X$ gate error rates of $\sim 10^{-4}$ using realistic noise models. We highlight that the low charge noise environment in these all-epitaxial phosphorus-doped silicon qubits will facilitate the realisation of strong coupling of the qubit to superconducting microwave cavities allowing for long-distance two-qubit operations.
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Submitted 6 May, 2021;
originally announced May 2021.
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Spin-photon coupling for atomic qubit devices in silicon
Authors:
Edyta N. Osika,
Sacha Kocsis,
Yu-Ling Hsueh,
Serajum Monir,
Cassandra Chua,
Hubert Lam,
Benoit Voisin,
Sven Rogge,
Rajib Rahman
Abstract:
Electrically addressing spin systems is predicted to be a key component in develo** scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave photons. However, single spins have no electric dipole, and therefore a spin-orbit mechanism must be integrated in the qubit design. Here, we propose to couple microwa…
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Electrically addressing spin systems is predicted to be a key component in develo** scalable semiconductor-based quantum processing architectures, to enable fast spin qubit manipulation and long-distance entanglement via microwave photons. However, single spins have no electric dipole, and therefore a spin-orbit mechanism must be integrated in the qubit design. Here, we propose to couple microwave photons to atomically precise donor spin qubit devices in silicon using the hyperfine interaction intrinsic to donor systems and an electrically-induced spin-orbit coupling. We characterise a one-electron system bound to a tunnel-coupled donor pair (1P-1P) using the tight-binding method, and then estimate the spin-photon coupling achievable under realistic assumptions. We address the recent experiments on double quantum dots (DQDs) in silicon and indicate the differences between DQD and 1P-1P systems. Our analysis shows that it is possible to achieve strong spin-photon coupling in 1P-1P systems in realistic device conditions without the need for an external magnetic field gradient.
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Submitted 6 May, 2021;
originally announced May 2021.
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Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation
Authors:
D. Holmes,
B. C. Johnson,
C. Chua,
B. Voisin,
S. Kocsis,
S. Rubanov,
S. G. Robson,
J. C. McCallum,
D. R McCamey,
S. Rogge,
D. N. Jamieson
Abstract:
Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of…
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Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of nat Si by sputtering using high fluence $^{28}$Si$^-$ implantation. Phosphorus (P) donors implanted into one such $^{28}$Si layer with ~3000 ppm $^{29}$Si, produced by implanting 30 keV $^{28}$Si$^-$ ions at a fluence of 4x10^18 cm^-2, were measured with pulsed electron spin resonance, confirming successful donor activation upon annealing. The mono-exponential decay of the Hahn echo signal indicates a depletion of $^{29}$Si. A coherence time of T2 = 285 +/- 14 us is extracted, which is longer than that obtained in nat Si for similar do** concentrations and can be increased by reducing the P concentration in future. The isotopic enrichment was improved by employing one-for-one ion sputtering using 45 keV $^{28}$Si$^-$ implantation. A fluence of 2.63x10^18 cm^-2 $^{28}$Si$^-$ ions were implanted at this energy into nat Si, resulting in an isotopically enriched surface layer ~100 nm thick; suitable for providing a sufficient volume of $^{28}$Si for donor qubits implanted into the near-surface region. We observe a depletion of $^{29}$Si to 250 ppm as measured by secondary ion mass spectrometry. The impurity content and the crystallization kinetics via solid phase epitaxy are discussed. The $^{28}$Si layer is confirmed to be a single crystal using transmission electron microscopy. This method of Si isotopic enrichment shows promise for incorporating into the fabrication process flow of Si spin qubit devices.
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Submitted 17 September, 2020;
originally announced September 2020.
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Engineering long spin coherence times of spin-orbit systems
Authors:
T. Kobayashi,
J. Salfi,
J. van der Heijden,
C. Chua,
M. G. House,
D. Culcer,
W. D. Hutchison,
B. C. Johnson,
J. C. McCallum,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
M. Y. Simmons,
S. Rogge
Abstract:
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s…
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Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances.
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Submitted 1 October, 2018; v1 submitted 28 September, 2018;
originally announced September 2018.
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Observation of Coulomb blockade in nanostructured epitaxial bilayer graphene on SiC
Authors:
Cassandra Chua,
Arseniy Lartsev,
**ggao Sui,
Vishal Panchal,
Reuben Puddy,
Carly Richardson,
Charles G. Smith,
T. J. B. M. Janssen,
Alexander Tzalenchuk,
Rositsa Yakimova,
Sergey Kubatkin,
Malcolm R. Connolly
Abstract:
We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphen…
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We study electron transport in nanostructures patterned in bilayer graphene patches grown epitaxially on SiC as a function of do**, magnetic field, and temperature. Away from charge neutrality transport is only weakly modulated by changes in carrier concentration induced by a local side-gate. At low n-type do** close to charge neutrality, electron transport resembles that in exfoliated graphene nanoribbons and is well described by tunnelling of single electrons through a network of Coulomb-blockaded islands. Under the influence of an external magnetic field, Coulomb blockade resonances fluctuate around an average energy and the gap shrinks as a function of magnetic field. At charge neutrality, however, conduction is less insensitive to external magnetic fields. In this regime we also observe a stronger suppression of the conductance below $T^*$, which we interpret as a sign of broken interlayer symmetry or strong fluctuations in the edge/potential disorder.
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Submitted 31 March, 2017;
originally announced March 2017.
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Quantum Hall Effect and Quantum Point Contact in Bilayer-Patched Epitaxial Graphene
Authors:
C. J. Chua,
M. R. Connolly,
A. Lartsev,
T. Yager,
S. Lara-Avila,
S. Kubatkin,
S. Kopylov,
V. I. Fal'ko,
R. Yakimova,
R. Pearce,
T. J. B. M. Janssen,
A. Ya. Tzalenchuk,
C. G. Smith
Abstract:
We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons…
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We study an epitaxial graphene monolayer with bilayer inclusions via magnetotransport measurements and scanning gate microscopy at low temperatures. We find that bilayer inclusions can be metallic or insulating depending on the initial and gated carrier density. The metallic bilayers act as equipotential shorts for edge currents, while closely spaced insulating bilayers guide the flow of electrons in the monolayer constriction, which was locally gated using a scanning gate probe.
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Submitted 27 October, 2014; v1 submitted 22 May, 2014;
originally announced May 2014.
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Vortex detection and quantum transport in mesoscopic graphene Josephson junction arrays
Authors:
C. L. Richardson,
S. D. Edkins,
G. R. Berdiyorov,
C. J. Chua,
J. P. Griffiths,
G. A. C. Jones,
M. R. Buitelaar,
V. Narayan,
F. Sfigakis,
C. G. Smith,
L. Covaci,
M. R. Connolly
Abstract:
We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the fo…
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We investigate mesoscopic Josephson junction arrays created by patterning superconducting disks on monolayer graphene, concentrating on the high-$T/T_c$ regime of these devices and the phenomena which contribute to the superconducting glass state in diffusive arrays. We observe features in the magnetoconductance at rational fractions of flux quanta per array unit cell, which we attribute to the formation of flux-quantized vortices. The applied fields at which the features occur are well described by Ginzburg-Landau simulations that take into account the number of unit cells in the array. We find that the mean conductance and universal conductance fluctuations are both enhanced below the critical temperature and field of the superconductor, with greater enhancement away from the graphene Dirac point.
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Submitted 21 June, 2015; v1 submitted 3 April, 2014;
originally announced April 2014.
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Transport Spectroscopy of a Graphene Quantum Dot Fabricated by Atomic Force Microscope Nanolithography
Authors:
R. K. Puddy,
C. J. Chua,
M. R. Buitelaar
Abstract:
We report low-temperature transport spectroscopy of a graphene quantum dot fabricated by atomic force microscope nanolithography. The excellent spatial resolution of the atomic force microscope allows us to reliably fabricate quantum dots with short constrictions of less than 15 nm in length. Transport measurements demonstrate that the device is dominated by a single quantum dot over a wide gate r…
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We report low-temperature transport spectroscopy of a graphene quantum dot fabricated by atomic force microscope nanolithography. The excellent spatial resolution of the atomic force microscope allows us to reliably fabricate quantum dots with short constrictions of less than 15 nm in length. Transport measurements demonstrate that the device is dominated by a single quantum dot over a wide gate range. The electron spin system of the quantum dot is investigated by applying an in-plane magnetic field. The results are consistent with a Lande g-factor of 2 but no regular spin filling sequence is observed, most likely due to disorder.
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Submitted 29 November, 2013;
originally announced November 2013.
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Gigahertz quantized charge pum** in graphene quantum dots
Authors:
M. R. Connolly,
K. L. Chiu,
S. P. Giblin,
M. Kataoka,
J. D. Fletcher,
C. Chua,
J. P. Griffiths,
G. A. C. Jones,
V. I. Fal'ko,
C. G. Smith,
T. J. B. M. Janssen
Abstract:
Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1…
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Single electron pumps are set to revolutionize electrical metrology by enabling the ampere to be re-defined in terms of the elementary charge of an electron. Pumps based on lithographically-fixed tunnel barriers in mesoscopic metallic systems and normal/superconducting hybrid turnstiles can reach very small error rates, but only at MHz pum** speeds corresponding to small currents of the order 1 pA. Tunable barrier pumps in semiconductor structures have been operated at GHz frequencies, but the theoretical treatment of the error rate is more complex and only approximate predictions are available. Here, we present a monolithic, fixed barrier single electron pump made entirely from graphene. We demonstrate pump operation at frequencies up to 1.4 GHz, and predict the error rate to be as low as 0.01 parts per million at 90 MHz. Combined with the record-high accuracy of the quantum Hall effect and proximity induced Josephson junctions, accurate quantized current generation brings an all-graphene closure of the quantum metrological triangle within reach. Envisaged applications for graphene charge pumps outside quantum metrology include single photon generation via electron-hole recombination in electrostatically doped bilayer graphene reservoirs, and for readout of spin-based graphene qubits in quantum information processing.
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Submitted 27 July, 2012;
originally announced July 2012.
