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Nonuniversality of the intrinsic inverse spin-Hall effect in diffusive systems
Authors:
L. Y. Wang,
A. G. Mal'shukov,
C. S. Chu
Abstract:
We studied the electric current induced in a two-dimensional electron gas by the spin current, in the presence of Rashba and cubic Dresselhaus spin-orbit interactions. We found out that the factor relating these currents is not universal, but rather depends on the origin of the spin current. Drastic distinction has been found between two cases: the spin current created by diffusion of an inhomogen…
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We studied the electric current induced in a two-dimensional electron gas by the spin current, in the presence of Rashba and cubic Dresselhaus spin-orbit interactions. We found out that the factor relating these currents is not universal, but rather depends on the origin of the spin current. Drastic distinction has been found between two cases: the spin current created by diffusion of an inhomogeneous spin density, and the pure homogeneous spin current. We found out that in the former case the ISHE electric current is finite, while it turns to zero in the latter case, if the spin-orbit coupling is represented by Rashba interaction.
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Submitted 10 April, 2012; v1 submitted 21 November, 2011;
originally announced November 2011.
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Temporal universal conductance fluctuations in RuO$_2$ nanowires due to mobile defects
Authors:
An-Shao Lien,
L. Y. Wang,
C. S. Chu,
Juhn-Jong Lin
Abstract:
Temporal universal conductance fluctuations (TUCF) are observed in RuO$_2$ nanowires at cryogenic temperatures. The fluctuations persist up to very high $T \sim 10$ K. Their root-mean-square magnitudes increase with decreasing $T$, reaching $\sim 0.2 e^2/h$ at $T \lesssim 2$ K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in…
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Temporal universal conductance fluctuations (TUCF) are observed in RuO$_2$ nanowires at cryogenic temperatures. The fluctuations persist up to very high $T \sim 10$ K. Their root-mean-square magnitudes increase with decreasing $T$, reaching $\sim 0.2 e^2/h$ at $T \lesssim 2$ K. These fluctuations are shown to originate from scattering of conduction electrons with rich amounts of mobile defects in artificially synthesized metal oxide nanowires. TUCF characteristics in both one-dimensional saturated and unsaturated regimes are identified and explained in terms of current theories. Furthermore, the TUCF as a probe for the characteristic time scales of the mobile defects (two-level systems) are discussed.
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Submitted 27 September, 2011;
originally announced September 2011.
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Spin-Hall current and spin polarization in an electrically biased SNS Josephson junction
Authors:
A. G. Mal'shukov,
C. S. Chu
Abstract:
Periodic in time spin-Hall current and spin polarization induced by a dc electric bias has been calculated in a superconductor-normal 2DEG-superconductor (SNS) Josephson junction. We assumed that the band energies of electrons in the normal system are splitted due to Rashba spin-orbit coupling. The transport parameters have been calculated within the diffusion approximation and using perturbation…
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Periodic in time spin-Hall current and spin polarization induced by a dc electric bias has been calculated in a superconductor-normal 2DEG-superconductor (SNS) Josephson junction. We assumed that the band energies of electrons in the normal system are splitted due to Rashba spin-orbit coupling. The transport parameters have been calculated within the diffusion approximation and using perturbation expansion over a small SN contact transparency. We found out that in contrast to the stationary Josephson effect, the spin-Hall current does not turn to zero. Besides a direct proximity effect caused by Cooper pair's transition into a triplet state, the spin current and polarization are also driven by a periodic electric field associated with the charge imbalance.
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Submitted 1 September, 2011; v1 submitted 22 February, 2011;
originally announced February 2011.
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Robust Level Coincidences in the Subband Structure of Quasi 2D Systems
Authors:
R. Winkler,
L. Y. Wang,
Y. H. Lin,
C. S. Chu
Abstract:
Recently, level crossings in the energy bands of crystals have been identified as a key signature for topological phase transitions. Using realistic models we show that the parameter space controlling the occurrence of level coincidences in energy bands has a much richer structure than anticipated previously. In particular, we identify robust level coincidences that cannot be removed by a small pe…
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Recently, level crossings in the energy bands of crystals have been identified as a key signature for topological phase transitions. Using realistic models we show that the parameter space controlling the occurrence of level coincidences in energy bands has a much richer structure than anticipated previously. In particular, we identify robust level coincidences that cannot be removed by a small perturbation of the Hamiltonian compatible with the crystal symmetry. Different topological phases that are insulating in the bulk are then separated by a gapless (metallic) phase. We consider HgTe/CdTe quantum wells as a specific example.
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Submitted 11 March, 2011; v1 submitted 19 November, 2010;
originally announced November 2010.
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Spin-Hall effects in a Josephson contact
Authors:
A. G. Mal'shukov,
C. S. Chu
Abstract:
The Josephson tunneling through a 2D normal contact with the spin-orbit split conduction band has been studied in the diffusive regime. Linearized Usadel equations for triplet components of the pairing function revealed a striking similarity to the equations of spin diffusion driven by the electric field in normal metals. Consequently, we predict that the out-of-plane spin-Hall polarization accu…
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The Josephson tunneling through a 2D normal contact with the spin-orbit split conduction band has been studied in the diffusive regime. Linearized Usadel equations for triplet components of the pairing function revealed a striking similarity to the equations of spin diffusion driven by the electric field in normal metals. Consequently, we predict that the out-of-plane spin-Hall polarization accumulates towards lateral sample edges and the in-plane polarization is finite throughout the entire normal region. At the same time, the spin-Hall current is absent in the considered case of the stationary Josephson effect.
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Submitted 28 January, 2008;
originally announced January 2008.
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Spin orientation and spin-Hall effect induced by tunneling electrons
Authors:
A. G. Mal'shukov,
C. S. Chu
Abstract:
It is shown that a flux of unpolarized electrons across a symmetric double barrier quantum well induces a spin polarization inside the well. Besides, the transmitted current acquires a spin polarized component and the spin-Hall current flows in the planar direction. These phenomena are due to a combined effect of Dresselhaus interaction and the spin-orbit interaction induced by gradients of hete…
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It is shown that a flux of unpolarized electrons across a symmetric double barrier quantum well induces a spin polarization inside the well. Besides, the transmitted current acquires a spin polarized component and the spin-Hall current flows in the planar direction. These phenomena are due to a combined effect of Dresselhaus interaction and the spin-orbit interaction induced by gradients of heterostructure material parameters. In contrast to previous studies of the spin filtering effect, we predict that it can be observed in case of an isotropic distribution of incident electrons.
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Submitted 4 December, 2007;
originally announced December 2007.
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Spin-Hall interface resistance in terms of Landauer type spin dipoles
Authors:
A. G. Mal'shukov,
L. Y. Wang,
C. S. Chu
Abstract:
We considered the nonequlibrium spin dipoles induced around spin independent elastic scatterers by the intrinsic spin-Hall effect associated with the Rashba spin-orbit coupling. The normal to 2DEG spin polarization has been calculated in the diffusion range around the scatterer. We found that although around each impurity this polarization is finite, the corresponding macroscopic spin density, o…
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We considered the nonequlibrium spin dipoles induced around spin independent elastic scatterers by the intrinsic spin-Hall effect associated with the Rashba spin-orbit coupling. The normal to 2DEG spin polarization has been calculated in the diffusion range around the scatterer. We found that although around each impurity this polarization is finite, the corresponding macroscopic spin density, obtained via averaging of individual spin dipole distributions over impurity positions is zero in the bulk. At the same time, the spin density is finite near the boundary of 2DEG, except for a special case of a hard wall boundary. The boundary value of the spin polarization can be associated with the interface spin-Hall resistance determining the additional energy dissipation due to spin accumulation.
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Submitted 7 November, 2006; v1 submitted 16 October, 2006;
originally announced October 2006.
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Localized states in the continuum in low-dimensional systems
Authors:
Khee-Kyun Voo,
C. S. Chu
Abstract:
It is shown in this paper that for open systems, states which are localized in space, discrete in energy, and embedded in the continuum of extended states, can be sustained by low-dimensional and channeled leads. These states have an origin different from that of analogous states discussed by J. von Neumann and E. Wigner [Phys. Z., vol. 30, 465 (1929)]. A few representative systems are discussed…
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It is shown in this paper that for open systems, states which are localized in space, discrete in energy, and embedded in the continuum of extended states, can be sustained by low-dimensional and channeled leads. These states have an origin different from that of analogous states discussed by J. von Neumann and E. Wigner [Phys. Z., vol. 30, 465 (1929)]. A few representative systems are discussed. These states cause, for example, infinitely sharp Fano resonance in transport when they are marginally destroyed.
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Submitted 9 September, 2006;
originally announced September 2006.
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Spin cloud induced around an elastic scatterer by the intrinsic spin-Hall effect
Authors:
A. G. Mal'shukov,
C. S. Chu
Abstract:
Similar to the Landauer electric dipole created around an impurity by the electric current, a spin polarized cloud of electrons can be induced by the intrinsic spin-Hall effect near a spin independent elastic scatterer. It is shown that in the ballistic range around the impurity, such a cloud appears in the case of Rashba spin-orbit interaction, even though the bulk spin-Hall current is absent.
Similar to the Landauer electric dipole created around an impurity by the electric current, a spin polarized cloud of electrons can be induced by the intrinsic spin-Hall effect near a spin independent elastic scatterer. It is shown that in the ballistic range around the impurity, such a cloud appears in the case of Rashba spin-orbit interaction, even though the bulk spin-Hall current is absent.
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Submitted 12 September, 2006; v1 submitted 23 April, 2006;
originally announced April 2006.
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Nonadiabatic quantum pum** in mesoscopic nanostructures
Authors:
C. S. Tang,
C. S. Chu
Abstract:
We consider a nonadiabatic quantum pum** phenomena in a ballistic narrow constriction. The pum** is induced by a potential that has both spatial and temporal periodicity characterized by $K$ and $Ω$. In the zero frequency ($Ω=0$) limit, the transmission through narrow constriction exhibits valley structures due to the opening up of energy gaps in the pum** region -- a consequence of the…
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We consider a nonadiabatic quantum pum** phenomena in a ballistic narrow constriction. The pum** is induced by a potential that has both spatial and temporal periodicity characterized by $K$ and $Ω$. In the zero frequency ($Ω=0$) limit, the transmission through narrow constriction exhibits valley structures due to the opening up of energy gaps in the pum** region -- a consequence of the $K$ periodicity. These valley structures remain robust in the regime of finite $Ω$, while their energies of occurrence are shifted by about $\hbarΩ/2$. The direction of these energy shifts depend on the directions of both the phase-velocity of the pum** potential and the transmitting electrons. This frequency dependent feature of the valley structures gives rise to both the asymmetry in the transmission coefficients and the pum** current. An experimental setup is suggested for a possible observation of our nonadiabatic quantum pum** findings.
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Submitted 21 March, 2006;
originally announced March 2006.
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Coherent quantum transport in the presence of a finite-range transversely polarized time-dependent field
Authors:
C. S. Tang,
C. S. Chu
Abstract:
This work investigates the quantum transport in a narrow constriction acted upon by a finite-range transversely polarized time-dependent electric field. A generalized scattering-matrix method is developed that has incorporated a time-dependent mode-matching scheme. The transverse field induces coherent inelastic scatterings that include both intersubband and intersideband transitions. These scat…
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This work investigates the quantum transport in a narrow constriction acted upon by a finite-range transversely polarized time-dependent electric field. A generalized scattering-matrix method is developed that has incorporated a time-dependent mode-matching scheme. The transverse field induces coherent inelastic scatterings that include both intersubband and intersideband transitions. These scatterings give rise to the dc conductance $G$ a general suppressed feature that escalates with the chemical potential. In addition, particular suppressed features -- the dip structures -- are found in $G$. These features are recognized as the quasi-bound-state (QBS) features that arise from electrons making intersubband transitions to the vicinity of a subband bottom. For the case of larger field intensities, the QBS features that involve more photons are more evident. These QBS features are closely associated with the singular density of states at the subband bottoms. An experimental setup is proposed for the observation of these features.
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Submitted 21 March, 2006;
originally announced March 2006.
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Differential conductance of a saddle-point constriction with a time-modulated gate-voltage
Authors:
C. S. Tang,
C. S. Chu
Abstract:
The effect of a time-modulated gate-voltage on the differential conductance $G$ of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form $V_{0} θ(a/2-|x-x_{c}|) \cos (ωt)$. For $\hbarω$ less than half of the transverse subband energy level spacing, gate-voltage-assist…
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The effect of a time-modulated gate-voltage on the differential conductance $G$ of a saddle-point constriction is studied. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form $V_{0} θ(a/2-|x-x_{c}|) \cos (ωt)$. For $\hbarω$ less than half of the transverse subband energy level spacing, gate-voltage-assisted (suppressed) feature occurs when the chemical potential $μ$ is less (greater) than but close to the threshold energy of a subband. As $μ$ increases, $G$ is found to exhibit, alternatively, the assisted and the suppressed feature. For larger $\hbarω$, these two features may overlap with one another. Dip structures are found in the suppressed regime. Mini-steps are found in the assisted regime only when the gate-voltage covers region far enough away from the center of the constriction.
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Submitted 21 March, 2006;
originally announced March 2006.
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Effects of a transversely polarized electric field on the quantum transport in narrow channels
Authors:
C. S. Chu,
C. S. Tang
Abstract:
The quantum transport in a narrow channel (NC) is studied in the presence of a time-dependent delta-profile electric field.
The electric field is taken to be transversely polarized, with frequency $ω$, causing inter-subband and inter-sideband transitions. Suppression in the dc conductance $G$ is found, which escalates with the chemical potential. There are structures in $G$ which are related to…
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The quantum transport in a narrow channel (NC) is studied in the presence of a time-dependent delta-profile electric field.
The electric field is taken to be transversely polarized, with frequency $ω$, causing inter-subband and inter-sideband transitions. Suppression in the dc conductance $G$ is found, which escalates with the chemical potential. There are structures in $G$ which are related to the quasi-bound states (QBS) features. Major dip, and dip-and-peak, structures occur when an incident electron makes transition to a subband edge by absorbing or emitting one, and two, $\hbarω$, respectively. Structures associated with three $\hbarω$ processes are recognized. The QBS are closely associated with the singular density of states (DOS) at subband bottoms. Our results indicate that, due to this singular features of the DOS, the interaction of the electron with the electric field has to be treated beyond finite order perturbation.
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Submitted 18 March, 2006;
originally announced March 2006.
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Coherent quantum transport in narrow constrictions in the presence of a finite-range longitudinally polarized time-dependent field
Authors:
C. S. Tang,
C. S. Chu
Abstract:
We have studied the quantum transport in a narrow constriction acted upon by a finite-range longitudinally polarized time-dependent electric field. The electric field induces coherent inelastic scatterings which involve both intra-subband and inter-sideband transitions. Subsequently, the dc conductance G is found to exhibit suppressed features. These features are recognized as the quasi-bound-st…
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We have studied the quantum transport in a narrow constriction acted upon by a finite-range longitudinally polarized time-dependent electric field. The electric field induces coherent inelastic scatterings which involve both intra-subband and inter-sideband transitions. Subsequently, the dc conductance G is found to exhibit suppressed features. These features are recognized as the quasi-bound-state (QBS) features which are associated with electrons making transitions to the vicinity of a subband bottom, of which the density of states is singular. Having valley-like instead of dip-like structures, these QBS features are different from the G characteristics for constrictions acted upon by a finite-range time-modulated potential. In addition, the subband bottoms in the time-dependent electric field region are shifted upward by an energy proportional to the square of the electric field and inversely proportional to the square of the frequency. This effective potential barrier is originated from the square of the vector potential and it leads to the interesting field-sensitive QBS features. An experimental set-up is proposed for the observation of these features.
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Submitted 18 March, 2006;
originally announced March 2006.
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Quantum transport in the presence of a finite-range time-modulated potential
Authors:
C. S. Tang,
C. S. Chu
Abstract:
Quantum transport in a narrow constriction, and in the presence of a finite-range time-modulated potential, is studied. The potential is taken the form $V(x,t) = V_{0} θ(x)θ(a-x)\cos(ωt)$, with $a$ the range of the potential and $x$ the transmission direction. As the chemical potential $μ$ is increasing, the dc conductance $G$ is found to exhibit dip, or peak, structures when $μ$ is at…
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Quantum transport in a narrow constriction, and in the presence of a finite-range time-modulated potential, is studied. The potential is taken the form $V(x,t) = V_{0} θ(x)θ(a-x)\cos(ωt)$, with $a$ the range of the potential and $x$ the transmission direction. As the chemical potential $μ$ is increasing, the dc conductance $G$ is found to exhibit dip, or peak, structures when $μ$ is at $n\hbarω$ above the threshold energy of a subband. These structures in $G$ are found in both the small $a$ ($a \ll λ_{F}$) and the large $a$ ($a \gg λ_{F}$) regime. The dips, which are associated with the formation of quasi-bound states, are narrower for smaller $a$, and for smaller $V_{0}$. The locations of these dips are essentially fixed, with small shifts only in the case of large $V_{0}$. Our results can be reduced to the limiting case of a delta-profile oscillating potential when both $a$ and $V_{0}a$ are small. The assumed form of the time-modulated potential is expected to be realized in a gate-induced potential configuration.
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Submitted 27 December, 2005;
originally announced December 2005.
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Spin-Hall effect on edge magnetization and electric conductance of a 2D semiconductor strip
Authors:
A. G. Mal'shukov,
L. Y. Wang,
C. S. Chu,
K. A. Chao
Abstract:
The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip, as well as the electric current in the longitudinal direction exhibit damped oscillations as a function of the width and strength of the Dresselhaus spin-orbi…
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The intrinsic spin-Hall effect on spin accumulation and electric conductance in a diffusive regime of a 2D electron gas has been studied for a 2D strip of a finite width. It is shown that the spin polarization near the flanks of the strip, as well as the electric current in the longitudinal direction exhibit damped oscillations as a function of the width and strength of the Dresselhaus spin-orbit interaction. Cubic terms of this interaction are crucial for spin accumulation near the edges. As expected, no effect on the spin accumulation and electric conductance have been found in case of Rashba spin-orbit interaction.
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Submitted 7 December, 2005; v1 submitted 28 June, 2005;
originally announced June 2005.
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Strain-Induced Coupling of Spin Current to Nanomechanical Oscillations
Authors:
A. G. Mal'shukov,
C. S. Tang,
C. S. Chu,
K. A. Chao
Abstract:
We propose a setup which allows to couple the electron spin degree of freedom to the mechanical motions of a nanomechanical system not involving any of the ferromagnetic components. The proposed method employs the strain induced spin-orbit interaction of electrons in narrow gap semiconductors. We have shown how this method can be used for detection and manipulation of the spin flow through a sus…
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We propose a setup which allows to couple the electron spin degree of freedom to the mechanical motions of a nanomechanical system not involving any of the ferromagnetic components. The proposed method employs the strain induced spin-orbit interaction of electrons in narrow gap semiconductors. We have shown how this method can be used for detection and manipulation of the spin flow through a suspended rod in a nanomechanical device.
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Submitted 8 September, 2005; v1 submitted 29 April, 2005;
originally announced April 2005.
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DC Spin Current Generation in a Rashba-type Quantum Channel
Authors:
L. Y. Wang,
C. S. Tang,
C. S. Chu
Abstract:
We propose and demonstrate theoretically that resonant inelastic scattering (RIS) can play an important role in dc spin current generation. The RIS makes it possible to generate dc spin current via a simple gate configuration: a single finger-gate that locates atop and orients transversely to a quantum channel in the presence of Rashba spin-orbit interaction. The ac biased finger-gate gives rise…
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We propose and demonstrate theoretically that resonant inelastic scattering (RIS) can play an important role in dc spin current generation. The RIS makes it possible to generate dc spin current via a simple gate configuration: a single finger-gate that locates atop and orients transversely to a quantum channel in the presence of Rashba spin-orbit interaction. The ac biased finger-gate gives rise to a time-variation in the Rashba coupling parameter, which causes spin-resolved RIS, and subsequently contributes to the dc spin current. The spin current depends on both the static and the dynamic parts in the Rashba coupling parameter, $α_0$ and $α_1$, respectively, and is proportional to $α_0 α_1^2$. The proposed gate configuration has the added advantage that no dc charge current is generated. Our study also shows that the spin current generation can be enhanced significantly in a double finger-gate configuration.
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Submitted 23 September, 2004; v1 submitted 12 September, 2004;
originally announced September 2004.
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Finger-gate array quantum pumps:pum** characteristics and mechanisms
Authors:
S. W. Chung,
C. S. Tang,
C. S. Chu,
C. Y. Chang
Abstract:
We study the pum** effects, in both the adiabatic and nonadiabatic regimes, of a pair of \QTR{it}{finite} finger-gate array (FGA) on a narrow channel. Connection between the pum** characteristics and associated mechanisms is established. The pum** potential is generated by ac biasing the FGA pair. For a single pair (N=1) of finger gates (FG's), the pum** mechanism is due to the coherent…
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We study the pum** effects, in both the adiabatic and nonadiabatic regimes, of a pair of \QTR{it}{finite} finger-gate array (FGA) on a narrow channel. Connection between the pum** characteristics and associated mechanisms is established. The pum** potential is generated by ac biasing the FGA pair. For a single pair (N=1) of finger gates (FG's), the pum** mechanism is due to the coherent inelastic scattering of the traversing electron to its subband threshold. For a pair of FGA with pair number $N>2$, the dominant pum** mechanism becomes that of the time-dependent Bragg reflection. The contribution of the time-dependent Bragg reflection to the pum** is enabled by breaking the symmetry in the electron transmission when the pum** potential is of a predominant propagating type. This propagating wave condition can be achieved both by an appropriate choice of the FGA pair configuration and by the monitoring of a phase difference $φ$ between the ac biases in the FGA pair. The robustness of such a pum** mechanism is demonstrated by considering a FGA pair with only pair number N=4.
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Submitted 28 June, 2004; v1 submitted 7 June, 2003;
originally announced June 2003.
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Spin Current Generation and Detection in the Presence of AC Gate
Authors:
A. G. Mal'shukov,
C. S. Tang,
C. S. Chu,
K. A. Chao
Abstract:
We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC current are discussed. An all-electric method of spin current detection is suggested, which measures the voltage on the gate in the vicinity of a 2D electron gas…
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We predict that in a narrow gap III-V semiconductor quantum well or a wire an observable spin current can be generated with a time dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated AC current are discussed. An all-electric method of spin current detection is suggested, which measures the voltage on the gate in the vicinity of a 2D electron gas carrying a time dependent spin current. Both the generation and detection do not involve any optical or magnetic mediators.
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Submitted 6 November, 2003; v1 submitted 25 November, 2002;
originally announced November 2002.
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Transport spectroscopy in a time-modulated open quantum dot
Authors:
C. S. Tang,
Y. H. Tan,
C. S. Chu
Abstract:
We have investigated the time-modulated coherent quantum transport phenomena in a ballistic open quantum dot. The conductance $G$ and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under high-frequency modulation, the traversing electrons are found to exhibit three types of resonant scatterings. They are intersideband scatterings: into quasibound sta…
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We have investigated the time-modulated coherent quantum transport phenomena in a ballistic open quantum dot. The conductance $G$ and the electron dwell time in the dots are calculated by a time-dependent mode-matching method. Under high-frequency modulation, the traversing electrons are found to exhibit three types of resonant scatterings. They are intersideband scatterings: into quasibound states in the dots, into true bound states in the dots, and into quasibound states just beneath the subband threshold in the leads. Dip structures or fano structures in $G$ are their signatures. Our results show structures due to 2$\hbarω$ intersideband processes. At the above scattering resonances, we have estimated, according to our dwell time calculation, the number of round-trip scatterings that the traversing electrons undertake between the two dot openings.
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Submitted 27 July, 2005; v1 submitted 1 October, 2002;
originally announced October 2002.
