Showing 1–21 of 21 results for author: Chong, K

Reentrant quantum anomalous Hall effect in molecular beam epitaxy-grown MnBi2Te4 thin films

Authors: Yuanzhao Li, Yunhe Bai, Yang Feng, Jianli Luan, Zongwei Gao, Yang Chen, Yitian Tong, Ruixuan Liu, Su Kong Chong, Kang L. Wang, Xiaodong Zhou, Jian Shen, **song Zhang, Yayu Wang, Chui-Zhen Chen, XinCheng Xie, Xiao Feng, Ke He, Qi-Kun Xue

Abstract: In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the… ▽ More In this study, we investigate intrinsic magnetic topological insulator MnBi2Te4 thin films grown by molecular beam epitaxy. We observe a reentrant quantum anomalous Hall effect when the Fermi energy enters the valance band and magnetic field equals zero, indicating the emergence of the Chern Anderson insulator state. The discovery opens a new avenue for realizing the QAH effect and underscores the fundamental role of both Berry curvature and Anderson localization. △ Less

Submitted 21 January, 2024; originally announced January 2024.

Comments: 15 pages, 4 figures

Tunning the number of chiral edge channels in a fixed quantum anomalous Hall system

Authors: Peng Deng, Yulei Han, Peng Zhang, Su Kong Chong, Zhenhua Qiao, Kang L. Wang

Abstract: Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of Ce2/h, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption ele… ▽ More Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of Ce2/h, wherein the Chern number C is an integer equal to the number of the parallel chiral edge channels. These chiral edge channels conduct dissipationless transport in QAH insulators, making them pivotal for applications in low-consumption electronics and topological quantum computing. While the QAH effect with multiple chiral edge channels (i.e., C >1) has been demonstrated in multilayers consisting of magnetic topological insulators and normal insulators, the channel number remains fixed for a given sample. Here, we unveil the tunability of the number of chiral edge channels within a single QAH insulator device. By tuning the magnetization of individual layers within the multilayer system, Chern insulating states with different Chern numbers are unveiled. The tunable Chern number was corroborated by our theoretical calculations. Furthermore, we conducted layer-dependent calculations to elucidate the contribution of the Chern number from different layers in the multilayer. Our findings demonstrate an extra degree of freedom in manipulating the chiral edge channels in QAH insulators. This newfound tunability offers extra dimension for the implementation of the QAH-based multi-channel dissipationless transport. △ Less

Submitted 4 January, 2024; originally announced January 2024.

Comments: The findings and content of this manuscript were also presented in a talk at the CPS meeting in December 2022. The video recording of the talk can be accessed at the following link: https://www.koushare.com/video/videodetail/39429

Pressure tunable quantum anomalous Hall states in a topological antiferromagnet

Authors: Su Kong Chong, Chao Lei, Jie Li, Yang Cheng, David Graf, Seng Huat Lee, Masaki Tanabe, Ting-Hsun Yang, Zhiqiang Mao, Allan H. MacDonald, Kang L. Wang

Abstract: Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressu… ▽ More Mechanical modulation of the lattice parameter can modify the electronic structure and manipulate the magnetic coupling of a material without introducing impurities. Inspired by success in pressure-controlled magnetism, we investigate the effect of hydrostatic pressure on quantized Chern states in the antiferromagnetic topological insulator MnBi2Te4, using transport as a probe. We show that pressure can enhance the robustness of quantum anomalous Hall (QAH) phases that are otherwise delicate in 7SL MnBi2Te4 and in the spin-flop (SF) state of 8SL MnBi2Te4. We explain our findings using a coupled Dirac cone model of MnBi2Te4, which identifies stronger hybridization between van der Waals layers as the driver of topological states. We further demonstrate that moderate pressures readily available in laboratory systems can provide reversible control of magnetic and topological phases. Our results reveal a strong connection between the mechanical engineering of band topology and magnetism. △ Less

Submitted 17 June, 2023; originally announced June 2023.

Comments: 11 pages, 4 figures

Giant Hall Switching by Surface-State-Mediated Spin-Orbit Torque in a Hard Ferromagnetic Topological Insulator

Authors: Lixuan Tai, Haoran He, Su Kong Chong, Huairuo Zhang, Hanshen Huang, Gang Qiu, Yaochen Li, Hung-Yu Yang, Ting-Hsun Yang, Xiang Dong, Yuxing Ren, Bingqian Dai, Tao Qu, Qingyuan Shu, Quanjun Pan, Peng Zhang, Fei Xue, Jie Li, Albert V. Davydov, Kang L. Wang

Abstract: Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic fie… ▽ More Topological insulators (TI) and magnetic topological insulators (MTI) can apply highly efficient spin-orbit torque (SOT) and manipulate the magnetization with their unique topological surface states with ultra-high efficiency. Here, we demonstrate efficient SOT switching of a hard MTI, V-doped (Bi,Sb)2Te3 (VBST) with a large coercive field that can prevent the influence of an external magnetic field. A giant switched anomalous Hall resistance of 9.2 $kΩ$ is realized, among the largest of all SOT systems. The SOT switching current density can be reduced to $2.8\times10^5 A/cm^2$. Moreover, as the Fermi level is moved away from the Dirac point by both gate and composition tuning, VBST exhibits a transition from edge-state-mediated to surface-state-mediated transport, thus enhancing the SOT effective field to $1.56\pm 0.12 T/ (10^6 A/cm^2)$ and the interfacial charge-to-spin conversion efficiency to $3.9\pm 0.3 nm^{-1}$. The findings establish VBST as an extraordinary candidate for energy-efficient magnetic memory devices. △ Less

Submitted 12 May, 2024; v1 submitted 8 June, 2023; originally announced June 2023.

Implementing Microwave Impedance Microscopy in a Dilution Refrigerator

Authors: Zhanzhi Jiang, Su Kong Chong, Peng Zhang, Peng Deng, Shizai Chu, Shahin Jahanbani, Kang Lung Wang, Keji Lai

Abstract: We report the implementation of a dilution-refrigerator-based scanning microwave impedance microscope (MIM) with a base temperature of ~ 100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates… ▽ More We report the implementation of a dilution-refrigerator-based scanning microwave impedance microscope (MIM) with a base temperature of ~ 100 mK. The vibration noise of our apparatus with tuning-fork feedback control is as low as 1 nm. Using this setup, we have demonstrated the imaging of quantum anomalous Hall states in magnetically (Cr and V) doped (Bi, Sb)2Te3 thin films grown on mica substrates. Both the conductive edge modes and topological phase transitions near coercive fields of Cr-doped and V-doped layers are visualized in the field-dependent results. Our work establishes the experimental platform for investigating nanoscale quantum phenomena under ultralow temperatures. △ Less

Submitted 17 April, 2023; originally announced April 2023.

Structural tuning magnetism and topology in a magnetic topological insulator

Authors: Christopher Eckberg, Gang Qiu, Tao Qu, Sohee Kwon, Yuhang Liu, Lixuan Tai, David Graf, Su Kong Chong, Peng Zhang, Kin L. Wong, Roger K. Lake, Mahesh R. Neupane, Kang L. Wang

Abstract: To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute do** of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polari… ▽ More To date, the most widely-studied quantum anomalous Hall insulator (QAHI) platform is achieved by dilute do** of magnetic ions into thin films of the alloyed tetradymite topological insulator (TI) (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ (BST). In these films, long-range magnetic ordering of the transition metal substituants opens an exchange gap $Δ$ in the topological surface states, stabilizing spin-polarized, dissipationless edge channels with a nonzero Chern number $\mathcal{C}$. The long-range ordering of the spatially separated magnetic ions is itself mediated by electronic states in the host TI, leading to a sophisticated feedback between magnetic and electronic properties. Here we present a study of the electronic and magnetic response of a BST-based QAHI system to structural tuning via hydrostatic pressure. We identify a systematic closure of the topological gap under compressive strain accompanied by a simultaneous enhancement in the magnetic ordering strength. Combining these experimental results with first-principle calculations we identify structural deformation as a strong tuning parameter to traverse a rich topological phase space and modify magnetism in the magnetically doped BST system. △ Less

Submitted 8 January, 2023; originally announced January 2023.

Comments: 15 pages, 5 figures

Anomalous Landau quantization in intrinsic magnetic topological insulators

Authors: Su Kong Chong, Chao Lei, Seng Huat Lee, Jan Jaroszynski, Zhiqiang Mao, Allan H. MacDonald, Kang L. Wang

Abstract: The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either inc… ▽ More The intrinsic magnetic topological insulators, Mn(Bi1-xSbx)2Te4, in their spin-aligned strong field configuration have been identified as a Weyl semimetal with single pair of Weyl nodes1-4. A direct consequence of the Weyl state is the layer-dependent Chern number (C) in thin film quantization. Previous reports in MnBi2Te4 thin films revealed the higher C states in the spin alignment by either increasing the film thickness5 or controlling chemical potential into electron do**6-8. A clear picture of the higher Chern states is still missing as the situation is complicated by the emerging of surface band Landau levels (LLs) in magnetic field. Here, we report a tunable layer-dependent of C= 1 state with the Sb substitutions by performing a detailed analysis of the quantization states in Mn(Bi1-xSbx)2Te4 dualgated devices, consistent with the calculations of the bulk Weyl point separations in the compounds. The observed Hall quantization plateaus for our thicker Mn(Bi1-xSbx)2Te4 films under strong magnetic fields can be interpreted from a theory of surface and bulk spin-polarized Landau levels spectrum in thin film magnetic topological insulators. Our results demonstrate that Mn(Bi1-xSbx)2Te4 thin films provide a highly tunable platform for probing the physics of the anomalous Landau quantization that is strongly sensitive to magnetic order. △ Less

Submitted 28 August, 2022; originally announced August 2022.

Comments: 23 pages, 7 figures

Unidirectional Spin Hall Magnetoresistance in Antiferromagnetic Heterostructures

Authors: Yang Cheng, Junyu Tang, Justin J. Michel, Su Kong Chong, Fengyuan Yang, Ran Cheng, Kang L. Wang

Abstract: Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/α-Fe2O3 bilayers where the α-Fe2O3 is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creatio… ▽ More Unidirectional spin Hall magnetoresistance (USMR) has been widely reported in the heavy metal / ferromagnet (HM/FM) bilayer systems. We observe the USMR in the Pt/α-Fe2O3 bilayers where the α-Fe2O3 is an antiferromagnetic (AFM) insulator. Systematic field and temperature dependent measurements confirm the magnonic origin of the USMR. The appearance of AFM-USMR is driven by the imbalance of creation and annihilation of AFM magnons by spin orbit torque due to thermal random field. However, unlike its ferromagnetic counterpart, theoretical modeling reveals that the USMR in Pt/α-Fe2O3 is determined by the antiferromagtic magnon number, and with a non-monotonic field dependence. Our findings extend the generality of the USMR which pave the ways for the highly sensitive detection of AF spin state. △ Less

Submitted 21 July, 2022; originally announced July 2022.

Nanomechanical Characterization of an Antiferromagnetic Topological Insulator

Authors: Shuwan Liu, Su Kong Chong, Dongwook Kim, Amit Vashist, Rohit Kumar, Seng Huat Lee, Kang L. Wang, Zhiqiang Mao, Feng Liu, Vikram V. Deshpande

Abstract: The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have been well-studied. However, their mechanical properties and magneto-mechanical coupling have not been well-explored. We use nanoelectromechanical systems to study… ▽ More The antiferromagnetic topological insulator MnBi2Te4 (MBT) exhibits an ideal platform to study exotic topological phenomena and magnetic properties. The transport signatures of magnetic phase transitions in the MBT family materials have been well-studied. However, their mechanical properties and magneto-mechanical coupling have not been well-explored. We use nanoelectromechanical systems to study the intrinsic magnetism in MBT thin flakes via their magnetostrictive coupling. We investigate mechanical resonance signatures of magnetic phase transitions from antiferromagnetic (AFM) to canted antiferromagnetic (cAFM) to ferromagnetic (FM) phases versus magnetic field at different temperatures. The spin-flop transitions in MBT are revealed by frequency shifts of mechanical resonance. With temperatures going above TN, the transitions disappear in the resonance frequency map, consistent with transport measurements. We use a magnetostrictive model to correlate the frequency shifts with the spin-canting states. Our work demonstrates a technique to study magnetic phase transitions, magnetization and magnetoelastic properties of the magnetic topological insulator. △ Less

Submitted 9 June, 2022; originally announced June 2022.

Mesoscopic Transport of Quantum Anomalous Hall Effect in Sub-Micron Size Regime

Authors: Gang Qiu, Peng Zhang, Peng Deng, Su Kong Chong, Lixuan Tai, Christopher Eckberg, Kang L. Wang

Abstract: The quantum anomalous Hall (QAH) effect has been demonstrated in two-dimensional topological insulator systems incorporated with ferromagnetism. However, a comprehensive understanding of mesoscopic transport in sub-micron QAH devices has yet been established. Here we fabricated miniaturized QAH devices with channel widths down to 600 nm, where the QAH features are still preserved. A back-scatterin… ▽ More The quantum anomalous Hall (QAH) effect has been demonstrated in two-dimensional topological insulator systems incorporated with ferromagnetism. However, a comprehensive understanding of mesoscopic transport in sub-micron QAH devices has yet been established. Here we fabricated miniaturized QAH devices with channel widths down to 600 nm, where the QAH features are still preserved. A back-scattering channel is formed in narrow QAH devices through percolative hop** between 2D compressible puddles. Large resistance fluctuations are observed in narrow devices near the coercive field, which is associated with collective interference between intersecting paths along domain walls when the device geometry is smaller than the phase coherence length $L_φ$. Through measurement of size-dependent breakdown current, we confirmed that the chiral edge states are confined at the physical boundary with its width on the order of Fermi wavelength. △ Less

Submitted 14 December, 2021; originally announced December 2021.

Comments: 7 pages, 5 figures

Distinguishing two-component anomalous Hall effect from topological Hall effect

Authors: Lixuan Tai, Bingqian Dai, Jie Li, Hanshen Huang, Su Kong Chong, Kin Wong, Huairuo Zhang, Peng Zhang, Peng Deng, Christopher Eckberg, Gang Qiu, Haoran He, Di Wu, Shijie Xu, Albert V. Davydov, Ruqian Wu, Kang L. Wang

Abstract: In transport, the topological Hall effect (THE) presents itself as non-monotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when anomalous Hall effect (AHE) is also present, the co-existence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with… ▽ More In transport, the topological Hall effect (THE) presents itself as non-monotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin textures, like magnetic skyrmions. However, when anomalous Hall effect (AHE) is also present, the co-existence of two AHEs could give rise to similar artifacts, making it difficult to distinguish between genuine THE with AHE and two-component AHE. Here we confirm genuine THE with AHE by means of transport and magneto-optical Kerr effect (MOKE) microscopy, in which magnetic skyrmions are directly observed, and find that genuine THE occurs in the transition region of the AHE. In sharp contrast, the artifact "THE", or two-component AHE occurs well beyond the saturation of the "AHE component" (under the false assumption of THE+AHE). Furthermore, we distinguish artifact "THE" from genuine THE by three methods: 1. Minor loops, 2. Temperature dependence, 3. Gate dependence. Minor loops of genuine THE with AHE are always within the full loop, while minor loops of the artifact "THE" may reveal a single loop that cannot fit into the "AHE component". Besides, the temperature or gate dependence of the artifact "THE" may also be accompanied by a polarity change of the "AHE component", as the non-monotonic features vanish, while the temperature dependence of genuine THE with AHE reveals no such change. Our work may help future researchers to exercise cautions and use these methods to examine carefully in order to ascertain genuine THE. △ Less

Submitted 15 August, 2022; v1 submitted 17 March, 2021; originally announced March 2021.

Universality in microdroplet nucleation during solvent exchange in Hele-Shaw like channels

Authors: Yanshen Li, Kai Leong Chong, Hanieh Bazyar, Rob G. H. Lammertink, Detlef Lohse

Abstract: Micro and nanodroplets have many important applications such as in drug delivery, liquid-liquid extraction, nanomaterial synthesis and cosmetics. A commonly used method to generate a large number of micro or nanodroplets in one simple step is solvent exchange (also called nanoprecipitation), in which a good solvent of the droplet phase is displaced by a poor one, generating an oversaturation pulse… ▽ More Micro and nanodroplets have many important applications such as in drug delivery, liquid-liquid extraction, nanomaterial synthesis and cosmetics. A commonly used method to generate a large number of micro or nanodroplets in one simple step is solvent exchange (also called nanoprecipitation), in which a good solvent of the droplet phase is displaced by a poor one, generating an oversaturation pulse that leads to droplet nucleation. Despite its crucial importance, the droplet growth resulting from the oversaturation pulse in this ternary system is still poorly understood. We experimentally and theoretically study this growth in Hele-Shaw like channels by measuring the total volume of the oil droplets that nucleates out of it. In order to prevent the oversaturated oil from exiting the channel, we decorated some of the channels with a porous region in the middle. Solvent exchange is performed with various solution compositions, flow rates and channel geometries, and the measured droplets volume is found to increase with the Péclet number $Pe$ with an approximate effective power law $V\propto Pe^{0.50}$. A theoretical model is developed to account for this finding. With this model we can indeed explain the $V\propto Pe^{1/2}$ scaling, including the prefactor, which can collapse all data of the "porous" channels onto one universal curve, irrespective of channel geometry and composition of the mixtures. Our work provides a macroscopic approach to this bottom-up method of droplet generation and may guide further studies on oversaturation and nucleation in ternary systems. △ Less

Submitted 15 February, 2021; v1 submitted 19 December, 2020; originally announced December 2020.

Comments: Published in Journal of Fluid Mechanics. 16 pages, 6 figures

Topological Phase Transitions in a Hybridized Three-Dimensional Topological Insulator

Authors: Su Kong Chong, Lizhe Liu, Taylor D. Sparks, Feng Liu, Vikram V. Deshpande

Abstract: As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped surface state. Analytical formulation suggests that the hybridization gap scales exponentially with decrease in number of layers while the system oscillates between… ▽ More As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped surface state. Analytical formulation suggests that the hybridization gap scales exponentially with decrease in number of layers while the system oscillates between topologically trivial and non-trivial insulators. This work explores the transport properties of a 3D TI in the inter-surface hybridization regime. By experimentally probing the hybridization gap as a function of BiSbTeSe2 thickness using three different methods, we map the crossover from the 3D to 2D state. In the 2D topological state, we observe a finite longitudinal conductance at ~2e2/h when the Fermi level is aligned within the surface gap, indicating a quantum spin Hall (QSH) state. Additionally, we study the response of trivial and non-trivial hybridization gapped states modulated by external out-of-plane magnetic and electric fields. Our revelations of surface gap-closing and/or reopening features are strongly indicative of topological phase transitions (TPTs) in the hybridization gap regime, realizing magnetic/electric field switching between band insulating and QSH states with immense potential for practical applications. △ Less

Submitted 9 April, 2020; originally announced April 2020.

Comments: 20 pages, 4 figures

Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance

Authors: Su Kong Chong, Ryuichi Tsuchikawa, Jared Harmer, Taylor D. Sparks, Vikram V. Deshpande

Abstract: Spectroscopy of discrete Landau levels (LLs) in bulk-insulating three-dimensional topological insulators (3D TIs) in perpendicular magnetic field characterizes the Dirac nature of their surface states. Despite a number of studies demonstrating the quantum Hall effect (QHE) of topological surface states, quantitative evaluation of the LL energies, which serve as fundamental electronic quantities fo… ▽ More Spectroscopy of discrete Landau levels (LLs) in bulk-insulating three-dimensional topological insulators (3D TIs) in perpendicular magnetic field characterizes the Dirac nature of their surface states. Despite a number of studies demonstrating the quantum Hall effect (QHE) of topological surface states, quantitative evaluation of the LL energies, which serve as fundamental electronic quantities for study of the quantum states, is still limited. In this work, we explore the density of states of LLs by measuring quantum capacitance (CQ) in a truly bulk insulating 3D TI via a van der Waals heterostructure configuration. By applying dual gate voltages, we access the individual surface states' LLs and extract their chemical potentials to quantify the LL spacings of each surface. We evaluate the LLs' energies at two distinguished QH states, namely dissipationless (ν= +/-1) and dissipative (ν= 0) states in the 3D TI. △ Less

Submitted 5 January, 2020; v1 submitted 9 December, 2019; originally announced December 2019.

Comments: 23 pages, 4 figures

Journal ref: ACS Nano 14, 1158 (2020)

Convection-dominated dissolution for single and multiple immersed sessile droplets

Authors: Kai Leong Chong, Yanshen Li, Chong Shen Ng, Roberto Verzicco, Detlef Lohse

Abstract: We numerically investigate both single and multiple droplet dissolution with droplets consisting of lighter liquid dissolving in a denser host liquid. The significance of buoyancy is quantified by the Rayleigh number Ra which is the buoyancy force over the viscous dam** force. In this study, Ra spans almost four decades from 0.1 to 400. We focus on how the mass flux, characterized by the Sherwoo… ▽ More We numerically investigate both single and multiple droplet dissolution with droplets consisting of lighter liquid dissolving in a denser host liquid. The significance of buoyancy is quantified by the Rayleigh number Ra which is the buoyancy force over the viscous dam** force. In this study, Ra spans almost four decades from 0.1 to 400. We focus on how the mass flux, characterized by the Sherwood number Sh, and the flow morphologies depend on Ra. For single droplet dissolution, we first show the transition of the Sh(Ra) scaling from a constant value to $Sh\sim Ra^{1/4}$, which confirms the experimental results by Dietrich et al. (J. Fluid Mech., vol. 794, 2016, pp. 45--67). The two distinct regimes, namely the diffusively- and the convectively-dominated regime, exhibit different flow morphologies: when Ra>=10, a buoyant plume is clearly visible which contrasts sharply to the pure diffusion case at low Ra. For multiple droplet dissolution, the well-known shielding effect comes into play at low Ra so that the dissolution rate is slower as compared to the single droplet case. However, at high Ra, convection becomes more and more dominant so that a collective plume enhances the mass flux, and remarkably the multiple droplets dissolve faster than a single droplet. This has also been found in the experiments by Laghezza et al. (Soft Matter, vol. 12, 2016, pp. 5787--5796). We explain this enhancement by the formation of a single, larger plume rather than several individual plumes. Moreover, there is an optimal Ra at which the enhancement is maximized, because the single plume is narrower at larger Ra, which thus hinders the enhancement. Our findings demonstrate a new mechanism in collective droplet dissolution, which is the merging of the plumes, that leads to non-trivial phenomena, contrasting the shielding effect. △ Less

Submitted 29 November, 2019; originally announced November 2019.

Comments: 18 pages, 11 figures, submitted to JFM

Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

Authors: Su Kong Chong, Kyu Bum Han, Taylor D. Sparks, Vikram V. Deshpande

Abstract: The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling betwe… ▽ More The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation. △ Less

Submitted 5 January, 2020; v1 submitted 22 July, 2019; originally announced July 2019.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Lett. 123, 036804 (2019)

A bouncing oil droplet in a stratified liquid and its sudden death

Authors: Yanshen Li, Christian Diddens, Andrea Prosperetti, Kai Leong Chong, Xuehua Zhang, Detlef Lohse

Abstract: Droplets can self-propel when immersed in another liquid in which a concentration gradient is present. Here we report the experimental and numerical study of a self-propelling oil droplet in a vertically stratified ethanol/water mixture: At first, the droplet sinks slowly due to gravity, but then, before having reached its density matched position, jumps up suddenly. More remarkably, the droplet b… ▽ More Droplets can self-propel when immersed in another liquid in which a concentration gradient is present. Here we report the experimental and numerical study of a self-propelling oil droplet in a vertically stratified ethanol/water mixture: At first, the droplet sinks slowly due to gravity, but then, before having reached its density matched position, jumps up suddenly. More remarkably, the droplet bounces repeatedly with an ever increasing jum** distance, until all of a sudden it stops after about 30 min. We identify the Marangoni stress at the droplet/liquid interface as responsible for the jum**: its strength grows exponentially because it pulls down ethanol-rich liquid, which in turn increases its strength even more. The jum** process can repeat because gravity restores the system. Finally, the sudden death of the jum** droplet is also explained. Our findings have demonstrated a type of prominent droplet bouncing inside a continuous medium with no wall or sharp interface. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 122, 154502 (2019)

Topological Insulator-Based van der Waals Heterostructures for Effective Control of Massless and Massive Dirac Fermions

Authors: Su Kong Chong, Kyu Bum Han, Akira Nagaoka, Ryuichi Tsuchikawa, Renlong Liu, Haoliang Liu, Z. Valy Vardeny, Dmytro A. Pesin, Changgu Lee, Taylor D. Sparks, Vikram V. Deshpande

Abstract: Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface… ▽ More Three dimensional (3D) topological insulators (TIs) are an important class of materials with applications in electronics, spintronics and quantum computing. With the recent development of truly bulk insulating 3D TIs, it has become possible to realize surface dominated phenomena in electrical transport measurements e.g. the quantum Hall (QH) effect of massless Dirac fermions in topological surface states (TSS). However, to realize more advanced devices and phenomena, there is a need for a platform to tune the TSS or modify them e.g. gap them by proximity with magnetic insulators, in a clean manner. Here we introduce van der Waals (vdW) heterostructures in the form of topological insulator/insulator/graphite to effectively control chemical potential of the TSS. Two types of gate dielectrics, normal insulator hexagonal boron nitride (hBN) and ferromagnetic insulator Cr2Ge2Te6 (CGT) are utilized to tune charge density of TSS in the quaternary TI BiSbTeSe2. hBN/graphite gating in the QH regime shows improved quantization of TSS by suppression of magnetoconductivity of massless Dirac fermions. CGT/graphite gating of massive Dirac fermions in the QH regime yields half-quantized Hall conductance steps and a measure of the Dirac gap. Our work shows the promise of the vdW platform in creating advanced high-quality TI-based devices. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 19 pages, 4 figures

Enhancement in surface mobility and quantum transport of Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) topological insulator by controlling the crystal growth conditions

Authors: Kyu-Bum Han, Su Kong Chong, Akira Nagaoka, Suzanne Petryk, Michael A. Scarpulla, Vikram V. Deshpande, Taylor D. Sparks

Abstract: Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth… ▽ More Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field. △ Less

Submitted 23 May, 2018; originally announced May 2018.

Comments: 22 pages, 6 figures, 1 table

Improvement of dielectric loss of doped Ba0.5Sr0.5TiO3 thin films for tunable microwave devices

Authors: K. B. Chong, L. B. Kong, LinFeng Chen, L. Yan, C. Y. Tan, T. Yang, C. K. Ong, T. Osipowicz

Abstract: Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparis… ▽ More Al2O3-Ba0.5Sr0.5TiO3 (Al2O3-BST) thin films, with different Al2O3 contents, were deposited on (100) LaAlO3 substrate by pulsed laser deposition (PLD) technique. The Al2O3-BST films was demosnstrated to be a suitable systems to fabricate ferroelectric thin films with low dielectric loss and higher figure of merit for tunable microwave devices. Pure BST thin films were also fabricated for comparison purpose. The films' structure and morphology were analyzed by X-ray diffractiopn and scanning electron microscopy, respectively; nad showed that the surface roughness for the Al2O3-BST films increased with the Al2O3 content. Apart from that, the broadening in the intensity peak in XRD result indicating the grain size of the Al2O3-BST films reduced with the increasing of Al2O3 dopant. We measured the dielctric properties of Al2O3-BST films with a home-made non-destructive dual resonator method at frequency ~ 7.7 GHZ. The effect of doped Al2O3 into BST thin films significantly reduced the dielectric constant, dielectric loss and tunability compare to pure BST thin film. Our result shows the figure of merit (K), used to compare the films with varied dielectric properties, increased with the Al2O3 content. Therefore Al2O3-BST films show the potential to be exploited in tunable microwave devices. △ Less

Submitted 23 June, 2003; v1 submitted 28 May, 2003; originally announced May 2003.

Comments: 8 pages, 4 figures, 1 table. Accepted & tentatively for Feb 15 2004 issue, Journal of Applied Physics

Journal ref: J. Applied Physics, 95(3), 1416-1419,2004.

Pulsed Laser Deposition of LaAlO3-Ba0.5Sr0.5TiO3 Thin Films for Tunable Device Applications

Authors: L. B. Kong, L. Yan, K. B. Chong, C. Y. Tan, L. F. Chen, C. K. Ong

Abstract: LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LAO-BST thin films were solid solution of LAO nd BST, with lattice constant… ▽ More LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The LAO-BST thin films were solid solution of LAO nd BST, with lattice constant decreasing with increasing LAO content. The composition of (LAO)x(BST)1-x, estimated from the lattice constant of the thin films derived from the targets of 1/6, 2/6 and 3/6 LAO, was 0.143, 0.278, 0.476, respectively. The grain size of the thin films decreased as a result of the incorporation of LAO into BST. Dielectric properties of the LAO-BST thin films on Pt/Ti/SiO2/Si were measured at low frequency (100 kHz), while those on LaAlO3 substrate were characterized at high frequency (~7.9 GHz). The dielectric constants of the film derived from pure BST target and those from the targets with 1/6, 2/6 and 3/6 area ratio of LAO, on Pt/Ti/SiO2/Si substrate, were 772, 514, 395 and 282, with a dielectric loss of 0.096, 0.023, 0.024 and 0.025, and a dielectric tunability of 65%, 53%, 43% and 14%, respectively. The dielectric constant of the LAO-BST films on LaAlO3 substrate were 2436, 2148, 2018, 1805, with a maximum dielectric tunability of 11%, 13%, 10% and 8% at a maximum applied voltage of 2.4 kV (~9.2 kV/cm). △ Less

Submitted 8 May, 2003; originally announced May 2003.

Comments: 19 pages, 9 figures