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Dimensionality Engineering of Magnetic Anisotropy from Anomalous Hall Effect in Synthetic SrRuO3 Crystals
Authors:
Seung Gyo Jeong,
Seong Won Cho,
Sehwan Song,
** Young Oh,
Do Gyeom Jeong,
Gyeongtak Han,
Hu Young Jeong,
Ahmed Yousef Mohamed,
Woo-suk Noh,
Sungkyun Park,
Jong Seok Lee,
Suyoun Lee,
Young-Min Kim,
Deok-Yong Cho,
Woo Seok Choi
Abstract:
Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designi…
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Magnetic anisotropy in atomically thin correlated heterostructures is essential for exploring quantum magnetic phases for next-generation spintronics. Whereas previous studies have mostly focused on van der Waals systems, here, we investigate the impact of dimensionality of epitaxially-grown correlated oxides down to the monolayer limit on structural, magnetic, and orbital anisotropies. By designing oxide superlattices with a correlated ferromagnetic SrRuO3 and nonmagnetic SrTiO3 layers, we observed modulated ferromagnetic behavior with the change of the SrRuO3 thickness. Especially, for three-unit-cell-thick layers, we observe a significant 1,500% improvement of coercive field in the anomalous Hall effect, which cannot be solely attributed to the dimensional crossover in ferromagnetism. The atomic-scale heterostructures further reveal the systematic modulation of anisotropy for the lattice structure and orbital hybridization, explaining the enhanced magnetic anisotropy. Our findings provide valuable insights into engineering the anisotropic hybridization of synthetic magnetic crystals, offering a tunable spin order for various applications.
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Submitted 3 July, 2024;
originally announced July 2024.
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Pairing interaction from Demons in Sr$_2$RuO$_4$
Authors:
Young Woo Choi,
Jisoon Ihm,
Marvin L. Cohen
Abstract:
We investigate the properties of the recently observed "demon" mode, a 3D acoustic plasmon, in Sr$_2$RuO$_4$ with an emphasis on evaluating its role for the pairing interactions in this superconductor. The demon mode is a low-energy electronic excitation, and it has been suggested that it could contribute to a reduced Coulomb repulsion and even a possible attractive interaction between electrons.…
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We investigate the properties of the recently observed "demon" mode, a 3D acoustic plasmon, in Sr$_2$RuO$_4$ with an emphasis on evaluating its role for the pairing interactions in this superconductor. The demon mode is a low-energy electronic excitation, and it has been suggested that it could contribute to a reduced Coulomb repulsion and even a possible attractive interaction between electrons. In this study, we explicitly calculate the dynamically screened Coulomb interaction for Sr$_2$RuO$_4$ by using a renormalized tight-binding band structure and the random phase approximation for the dielectric function. Although the focus here is on Sr$_2$RuO$_4$, this material is considered mainly as a prototype system, having an observed demon mode, and our results should be considered as a guide for application to other systems. Our calculations show that there are regions in ($\mathbf{q}$, $ω$) space where the Coulomb interaction becomes attractive. We find that, although the demon mode is not capable of producing a total attractive electron pairing interaction in Sr$_2$RuO$_4$, it does contribute to a significant reduction in the Coulomb repulsion at the relevant pairing energy scale.
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Submitted 2 July, 2024;
originally announced July 2024.
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Anomalous 4$f$ fine structure in TmSe$_{1-x}$Te$_x$ across the metal-insulator transition
Authors:
C. -H. Min,
S. Müller,
W. J. Choi,
L. Dudy,
V. Zabolotny,
M. Heber,
J. D. Denlinger,
C. -J. Kang,
M. Kalläne,
N. Wind,
M. Scholz,
T. L. Lee,
C. Schlueter,
A. Gloskovskii,
E. D. L. Rienks,
V. Hinkov,
H. Bentmann,
Y. S. Kwon,
F. Reinert,
K. Rossnagel
Abstract:
Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence syste…
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Hybridization between localized 4$f$ and itinerant 5$d$6$s$ states in heavy fermion compounds is a well-studied phenomenon and commonly captured by the paradigmatic Anderson model. However, the investigation of additional electronic interactions, beyond the standard Anderson model, has been limited, despite their predicted important role in the exotic quasiparticle formation in mixed-valence systems. We investigate the 4$f$ states in TmSe$_{1-x}$Te$_x$ throughout a semimetal-insulator phase transition, which drastically varies the interactions related to the 4$f$ states. Using synchrotron-based hard x-ray and extreme ultraviolet photoemission spectroscopy, we resolve subtle peak splitting in the 4$f$ peaks near the Fermi level in the mixed-valent semimetal phase. The separation is enhanced by several tens of meV by increasing the lattice parameter by a few percent. Our results elucidate the evolving nature of the 4$f$ state across the phase transition, and provide direct experimental evidence for electronic interactions beyond the standard Anderson model in mixed-valence systems.
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Submitted 4 June, 2024;
originally announced June 2024.
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Characterization of a graphene-hBN superlattice field effect transistor
Authors:
Won Beom Choi,
Youngoh Son,
Hangyeol Park,
Yungi Jeong,
Junhyeok Oh,
K. Watanabe,
T. Taniguchi,
Joonho Jang
Abstract:
Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor.…
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Graphene provides a unique platform for hosting high quality 2D electron systems. Encapsulating graphene with hexagonal boron nitride (hBN) to shield it from noisy environments offers the potential to achieve ultrahigh performance nanodevices, such as photodiodes and transistors. However, the absence of a bandgap at the Dirac point presents challenges for using this system as a useful transistor. In this study, we investigated the functionality of hBN-aligned monolayer graphene as a field effect transistor (FET). By precisely aligning the hBN and graphene, bandgaps open at the first Dirac point and at the hole-doped induced Dirac point via an interfacial moiré potential. To characterize this as a submicrometer scale FET, we fabricated a global bottom gate to tune the density of a conducting channel and a local top gate to switch off this channel. This demonstrated that the system could be tuned to an optimal on/off ratio regime by separately controlling the gates. These findings provide a valuable reference point for the further development of FETs based on graphene heterostructures.
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Submitted 12 July, 2024; v1 submitted 10 May, 2024;
originally announced May 2024.
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Altermagnetic Polar Metallic phase in Ultra-Thin Epitaxially-Strained RuO2 Films
Authors:
Seung Gyo Jeong,
In Hyeok Choi,
Sreejith Nair,
Luca Buiarelli,
Bita Pourbahari,
** Young Oh,
Nabil Bassim,
Ambrose Seo,
Woo Seok Choi,
Rafael M. Fernandes,
Turan Birol,
Liuyan Zhao,
Jong Seok Lee,
Bharat Jalan
Abstract:
Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measu…
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Altermagnetism refers to a wide class of compensated magnetic orders featuring magnetic sublattices with opposite spins related by rotational symmetry rather than inversion or translational operations, resulting in non-trivial spin splitting and high-order multipolar orders. Here, by combining theoretical analysis, electrical transport, X-ray and optical spectroscopies, and nonlinear optical measurements, we establish a phase diagram in hybrid molecular beam epitaxy-grown RuO2/TiO2 (110) films, map** the broken symmetries along the altermagnetic/electronic/structural phase transitions as functions of film thickness and temperature. This phase diagram features a novel altermagnetic metallic polar phase in strained 2 nm samples, extending the concept of multiferroics to altermagnetic systems. These results provide a comprehensive understanding of altermagnetism upon epitaxial heterostructure design for emergent novel phases with multifunctionalities.
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Submitted 9 May, 2024;
originally announced May 2024.
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Characterizing the Entanglement of Anyonic Systems using the Anyonic Partial Transpose
Authors:
Nico Kirchner,
Wonjune Choi,
Frank Pollmann
Abstract:
Entanglement of mixed quantum states can be quantified using the partial transpose and its corresponding entanglement measure, the logarithmic negativity. Recently, the notion of partial transpose has been extended to systems of anyons, which are exotic quasiparticles whose exchange statistics go beyond the bosonic and fermionic case. Studying the fundamental properties of this anyonic partial tra…
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Entanglement of mixed quantum states can be quantified using the partial transpose and its corresponding entanglement measure, the logarithmic negativity. Recently, the notion of partial transpose has been extended to systems of anyons, which are exotic quasiparticles whose exchange statistics go beyond the bosonic and fermionic case. Studying the fundamental properties of this anyonic partial transpose, we first reveal that when applied to the special case of fermionic systems, it can be reduced to the fermionic partial transpose or its twisted variant depending on whether or not a boundary Majorana fermion is present. Focusing on ground state properties, we find that the anyonic partial transpose captures both the correct entanglement scaling for gapless systems, as predicted by conformal field theory, and the phase transition between a topologically trivial and a nontrivial phase. For non-abelian anyons and the bipartition geometry, we find a rich multiplet structure in the eigenvalues of the partial transpose, the so-called negativity spectrum, and reveal the possibility of defining both a charge- and an imbalance-resolved negativity.
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Submitted 18 March, 2024;
originally announced March 2024.
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Electrically Tunable Spin Exchange Splitting in Graphene Hybrid Heterostructure
Authors:
Dongwon Shin,
Hyeonbeom Kim,
Sung Ju Hong,
Sehwan Song,
Yeongju Choi,
Youngkuk Kim,
Sungkyun Park,
Dongseok Suh,
Woo Seok Choi
Abstract:
Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid het…
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Graphene, with spin and valley degrees of freedom, fosters unexpected physical and chemical properties for the realization of next-generation quantum devices. However, the spin symmetry of graphene is rather robustly protected, hampering manipulation of the spin degrees of freedom for the application of spintronic devices such as electric gate tunable spin filters. We demonstrate that a hybrid heterostructure composed of graphene and LaCoO3 epitaxial thin film exhibits an electrically tunable spin exchange splitting. The large and adjustable spin exchange splitting of 155.9 - 306.5 meV was obtained by the characteristic shifts in both the spin symmetry broken quantum Hall states and the Shubnikov-de-Haas oscillations. Strong hybridization induced charge transfer across the hybrid heterointerface has been identified for the observed spin exchange splitting. The substantial and facile controllability of the spin exchange splitting provides an opportunity for spintronics applications with the electrically-tunable spin polarization in hybrid heterostructures.
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Submitted 13 March, 2024;
originally announced March 2024.
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Tunable electron scattering mechanism in plasmonic SrMoO$_3$ thin films
Authors:
Rahma Dhani Prasetiyawati,
Seung Gyo Jeong,
Chan-Koo Park,
Sehwan Song,
Sungkyun Park,
Tuson Park,
Woo Seok Choi
Abstract:
4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Abov…
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4d transition metal perovskite oxides serve as suitable testbeds for the study of strongly correlated metallic properties. Among these, $SrMoO_{3}$ (SMO) exhibits remarkable electrical conductivity at room temperature. The temperature-dependent resistivity $(ρ(T))$ exhibits a Fermi-liquid behavior below the transition temperature $T^{*}$, reflecting the dominant electron-electron interaction. Above $T^{*}$, electron-phonon interaction becomes more appreciable. In this study, we employed the power-law scaling of $ρ(T)$ to rigorously determine the $T^{*}$. We further demonstrate that the $T^{*}$ can be modified substantially by ~40 K in epitaxial thin films. It turns out that the structural quality determines $T^{*}$. Whereas the plasma frequency could be tuned by the change in the electron-electron interaction via the effective mass enhancement, we show that the plasmonic properties are more directly governed by the electron-impurity scattering. The facile control of the electron scattering mechanism through structural quality modulation can be useful for plasmonic sensing applications in the visible region.
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Submitted 24 January, 2024;
originally announced January 2024.
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Correlated Quantum Phenomena of Spin-Orbit Coupled Perovskite Oxide Heterostructures: Cases of SrRuO3 and SrIrO3-Based Artificial Superlattices
Authors:
Seung Gyo Jeong,
** Young Oh,
Lin Hao,
Jian Liu,
Woo Seok Choi
Abstract:
Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d oxide superlattices, in which the spin-orbit coupling plays a significant role compared with conventional 3d oxide…
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Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d oxide superlattices, in which the spin-orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, Jeff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities.
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Submitted 27 December, 2023;
originally announced December 2023.
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Exotic magnetic anisotropy near digitized dimensional Mott boundary
Authors:
Seung Gyo Jeong,
Jihyun Kim,
Taewon Min,
Sehwan Song,
** Young Oh,
Woo-suk Noh,
Sungkyun Park,
Tuson Park,
Jong Mok Ok,
Jaekwang Lee,
Woo Seok Choi
Abstract:
The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed…
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The magnetic anisotropy of low-dimensional Mott systems exhibits unexpected magnetotransport behavior useful for spin-based quantum electronics. Yet, the anisotropy of natural materials is inherently determined by the crystal structure, highly limiting its engineering. We demonstrate the magnetic anisotropy modulation near a digitized dimensional Mott boundary in artificial superlattices composed of a correlated magnetic monolayer SrRuO3 and nonmagnetic SrTiO3. The magnetic anisotropy is initially engineered by modulating the interlayer coupling strength between the magnetic monolayers. Interestingly, when the interlayer coupling strength is maximized, a nearly degenerate state is realized, in which the anisotropic magnetotransport is strongly influenced by both the thermal and magnetic energy scales. Our results offer a new digitized control for magnetic anisotropy in low-dimensional Mott systems, inspiring promising integration of Mottronics and spintronics.
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Submitted 15 November, 2023;
originally announced November 2023.
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Quantification of spin-charge interconversion in highly resistive sputtered Bi$_x$Se$_{1-x}$ with non-local spin valves
Authors:
Isabel C. Arango,
Won Young Choi,
Van Tuong Pham,
Inge Groen,
Diogo C. Vaz,
Punyashloka Debashis,
Hai Li,
Mahendra DC,
Kaan Oguz,
Andrey Chuvilin,
Luis E. Hueso,
Ian A. Young,
Fèlix Casanova
Abstract:
The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se…
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The development of spin-orbitronic devices, such as magneto-electric spin-orbit logic devices, calls for materials with a high resistivity and a high spin-charge interconversion efficiency. One of the most promising candidates in this regard is sputtered Bi$_x$Se$_{1-x}$. Although there are several techniques to quantify spin-charge interconversion, to date reported values for sputtered Bi$_x$Se$_{1-x}$ have often been overestimated due to spurious effects related to local currents combined with a lack of understanding of the effect of the interfaces and the use of approximations for unknown parameters, such as the spin diffusion length. In the present study, non-local spin valves are used to inject pure spin currents into Bi$_x$Se$_{1-x}$, allowing us to directly obtain its spin diffusion length as well as its spin Hall angle, from 10 K up to 300 K. These values, which are more accurate than those previously reported in sputtered Bi$_x$Se$_{1-x}$, evidence that the efficiency of this material is not exceptional. Indeed, the figure of merit for spin-charge interconversion, given by the product of these two parameters, is slightly under 1 nm. Our work demonstrates the importance of considering all material parameters and interfaces when quantifying the spin transport properties of materials with strong spin-orbit coupling.
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Submitted 6 November, 2023;
originally announced November 2023.
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Finite Temperature Entanglement Negativity of Fermionic Symmetry Protected Topological Phases and Quantum Critical Points in One Dimension
Authors:
Wonjune Choi,
Michael Knap,
Frank Pollmann
Abstract:
We study the logarithmic entanglement negativity of symmetry-protected topological (SPT) phases and quantum critical points (QCPs) of one-dimensional noninteracting fermions at finite temperatures. In particular, we consider a free fermion model that realizes not only quantum phase transitions between gapped phases but also an exotic topological phase transition between quantum critical states in…
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We study the logarithmic entanglement negativity of symmetry-protected topological (SPT) phases and quantum critical points (QCPs) of one-dimensional noninteracting fermions at finite temperatures. In particular, we consider a free fermion model that realizes not only quantum phase transitions between gapped phases but also an exotic topological phase transition between quantum critical states in the form of the fermionic Lifshitz transition. The bipartite entanglement negativity between adjacent fermion blocks reveals the crossover boundary of the quantum critical fan near the QCP between two gapped phases. Along the critical phase boundary between the gapped phases, the sudden decrease in the entanglement negativity signals the fermionic Lifshitz transition responsible for the change in the topological nature of the QCPs. In addition, the tripartite entanglement negativity between spatially separated fermion blocks counts the number of topologically protected boundary modes for both SPT phases and topologically nontrivial QCPs at zero temperature. However, the long-distance entanglement between the boundary modes vanishes at finite temperatures due to the instability of SPTs, the phases themselves.
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Submitted 1 December, 2023; v1 submitted 31 October, 2023;
originally announced October 2023.
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Nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2
Authors:
Shaohua Yan,
Hui-Hui He,
Yang Fu,
Ning-Ning Zhao,
Shangjie Tian,
Qiangwei Yin,
Fanyu Meng,
Xinyu Cao,
Le Wang,
Shanshan Chen,
Ki-Hoon Son,
Jun Woo Choi,
Hye** Ryu,
Shouguo Wang,
Xiao Zhang,
Kai Liu,
Hechang Lei
Abstract:
Itinerant ferromagnetism at room temperature is a key ingredient for spin transport and manipulation. Here, we report the realization of nearly-room-temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (323 K - 337 K) is almost unchanged when thickness is down to 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical ca…
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Itinerant ferromagnetism at room temperature is a key ingredient for spin transport and manipulation. Here, we report the realization of nearly-room-temperature itinerant ferromagnetism in Co doped Fe5GeTe2 thin flakes. The ferromagnetic transition temperature TC (323 K - 337 K) is almost unchanged when thickness is down to 12 nm and is still about 284 K at 2 nm (bilayer thickness). Theoretical calculations further indicate that the ferromagnetism persists in monolayer Fe4CoGeTe2. In addition to the robust ferromagnetism down to the ultrathin limit, Fe4CoGeTe2 exhibits an unusual temperature- and thickness-dependent intrinsic anomalous Hall effect. We propose that it could be ascribed to the dependence of band structure on thickness that changes the Berry curvature near the Fermi energy level subtly. The nearly-room-temperature ferromagnetism and tunable anomalous Hall effect in atomically thin Fe4CoGeTe2 provide opportunities to understand the exotic transport properties of two-dimensional van der Waals magnetic materials and explore their potential applications in spintronics.
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Submitted 24 August, 2023;
originally announced August 2023.
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Thermal decoupling in high-$T_c$ cuprate superconductors
Authors:
Sungwoo Lee,
Woo** Choi,
Youngje Kim,
Young-Kyun Kwon,
Dongjoon Song,
Miyoung Kim,
Gun-Do Lee
Abstract:
Although many years have passed since the discovery of high-critical-temperature (high-$T_c$) superconducting materials, the underlying mechanism is still unknown. The B1g phonon anomaly in high-Tc cuprate superconductors has long been studied; however, the correlation between the B1g phonon anomaly and superconductivity has yet to be clarified. In the present study, we successfully reproduced the…
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Although many years have passed since the discovery of high-critical-temperature (high-$T_c$) superconducting materials, the underlying mechanism is still unknown. The B1g phonon anomaly in high-Tc cuprate superconductors has long been studied; however, the correlation between the B1g phonon anomaly and superconductivity has yet to be clarified. In the present study, we successfully reproduced the B1g phonon anomaly in YBa$_2$Cu$_3$O$_7$ (YBCO) using an ab initio molecular dynamics (AIMD) simulation and temperature-dependent effective potential (TDEP) method. The Ag phonon by Ba atoms shows a more severe anomaly than the B1g phonon at low temperatures. Our analysis of the phonon anomaly and the temperature-dependent phonon dispersion indicated that decoupling between thermal phenomena and electron transport at low temperatures leads to layer-by-layer thermal decoupling in YBCO. Electronically and thermally isolated Ba atoms in YBCO are responsible for the thermal decoupling. The analytic study of the thermal dcoupling revealed that Planckian dissipation expressing linear-T resistivity is another expression of the Fermi liquid of the CuO$_2$ plane. The Uemura plot of the relationship between Tc and the Fermi temperature, as well as the superconducting dome in YBCO, is explained rigorously and quantitatively. Our findings not only present a new paradigm for understanding high-Tc superconductivity but also imply that the spontaneous formation of low-temperature layers in materials can lead to revolutionary changes in the thermal issues of industrial fields.
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Submitted 21 March, 2023;
originally announced March 2023.
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Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices
Authors:
Diogo C. Vaz,
Chia-Ching Lin,
John J. Plombon,
Won Young Choi,
Inge Groen,
Isabel C. Arango,
Andrey Chuvilin,
Luis E. Hueso,
Dmitri E. Nikonov,
Hai Li,
Punyashloka Debashis,
Scott B. Clendenning,
Tanay A. Gosavi,
Yen-Lin Huang,
Bhagwati Prasad,
Ramamoorthy Ramesh,
Aymeric Vecchiola,
Manuel Bibes,
Karim Bouzehouane,
Stephane Fusil,
Vincent Garcia,
Ian A. Young,
Fèlix Casanova
Abstract:
With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a rel…
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With the deceleration of dimensional and voltage scaling in CMOS technologies, the demand for novel logic devices has never been greater. While spin-based devices present a major opportunity towards favorable scaling, switching energies are still orders of magnitude above the expected values. Alternatively, magnetoelectric materials are predicted to enable low-power control of magnetization, a relatively unexplored pathway with sparse results at a device level. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for the writing, and spin-to-charge current conversion between CoFe and Pt, for the reading. Unlike other current-based spintronic devices, magnetization writing is driven solely by voltage pulses. We show that, upon electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. The voltage-induced switching is supported through a combination of piezoresponse, magnetic force microscopy, and scanning nitrogen-vacancy magnetometry, where magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, as well as a new avenue for low-power beyond-CMOS technologies.
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Submitted 23 February, 2023;
originally announced February 2023.
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Application of Machine Learning to Sporadic Experimental Data for Understanding Epitaxial Strain Relaxation
Authors:
** Young Oh,
Dongwon Shin,
Woo Seok Choi
Abstract:
Understanding epitaxial strain relaxation is one of the key challenges in functional thin films with strong structure-property relation. Herein, we employ an emerging data analytics approach to quantitatively evaluate the underlying relationships between critical thickness (hc) of strain relaxation and various physical and chemical features, despite the sporadic experimental data points available.…
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Understanding epitaxial strain relaxation is one of the key challenges in functional thin films with strong structure-property relation. Herein, we employ an emerging data analytics approach to quantitatively evaluate the underlying relationships between critical thickness (hc) of strain relaxation and various physical and chemical features, despite the sporadic experimental data points available. First, we have collected and refined reported hc of perovskite oxide thin film/substrate system to construct a consistent sub-dataset which captures a common trend among the varying experimental details. Then, we employ correlation analyses and feature engineering to find the most relevant feature set which include Poisson's ratio and lattice mismatch. With the insight offered by correlation analyses and feature engineering, machine learning (ML) models have been trained to deduce a decent accuracy, which has been further validated experimentally. the demonstrated framework is expected to be efficiently extended to the other classes of thin films in understanding hc.
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Submitted 5 January, 2023;
originally announced January 2023.
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Atomic and Electronic Structures of Correlated SrRuO3/SrTiO3 Superlattices
Authors:
Seung Gyo Jeong,
Ahmed Yousef Mohamed,
Deok-Yong Cho,
Woo Seok Choi
Abstract:
Atomic-scale precision epitaxy of perovskite oxide superlattices provides unique opportunities for controlling the correlated electronic structures, activating effective control knobs for intriguing functionalities including electromagnetic, thermoelectric, and electrocatalytic behaviors. In this study, we investigated the close interplay between the atomic and electronic structures of correlated…
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Atomic-scale precision epitaxy of perovskite oxide superlattices provides unique opportunities for controlling the correlated electronic structures, activating effective control knobs for intriguing functionalities including electromagnetic, thermoelectric, and electrocatalytic behaviors. In this study, we investigated the close interplay between the atomic and electronic structures of correlated superlattices synthesized by atomic-scale precision epitaxy. In particular, we employ superlattices composed of correlated magnetic SrRuO3 (SRO) and quantum paraelectric SrTiO3 (STO) layers. In those superlattices, RuO6 octahedral distortion is systematically controlled from 167 to 175 degrees depending on the thickness of the STO layers, also affecting the TiO6 octahedral distortion within the STO layer. Customized octahedral distortion within SRO/STO superlattices in turn modifies the electronic structures of both the Ti and Ru compounds, observed by X-ray absorption spectroscopy. Our results identify the close correlation between atomic lattice and electronic structures enabled by the facile controllability of atomic-scale epitaxy, which would be useful for designing future correlated oxide devices.
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Submitted 3 January, 2023;
originally announced January 2023.
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Atomic-scale Modulation of Synthetic Magnetic Order in Oxide Superlattices
Authors:
Seung Gyo Jeong,
Sehwan Song,
Sungkyun Park,
Valeria Lauter,
Woo Seok Choi
Abstract:
Atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit RKKY interaction through a nonmagnetic metallic spacer; however, they face problems arising from Joule heating and/or electri…
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Atomic-scale precision control of magnetic interactions facilitates a synthetic spin order useful for spintronics, including advanced memory and quantum logic devices. Conventional modulation of synthetic spin order has been limited to metallic heterostructures that exploit RKKY interaction through a nonmagnetic metallic spacer; however, they face problems arising from Joule heating and/or electric breakdown. The practical realization and observation of a synthetic spin order across a nonmagnetic insulating spacer would lead to the development of spin-related devices with a completely different concept. Herein, we report the atomic-scale modulation of the synthetic spiral spin order in oxide superlattices composed of ferromagnetic metal and nonmagnetic insulator layers. The atomically controlled superlattice exhibit an oscillatory magnetic behavior, representing the existence of a spiral spin structure. Depth-sensitive polarized neutron reflectometry evidences modulated spiral spin structures as a function of the nonmagnetic insulator layer thickness. Atomic-scale customization of the spin state could lead the field one step further to actual spintronic applications.
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Submitted 3 January, 2023;
originally announced January 2023.
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Spin-to-charge conversion by spin pum** in sputtered polycrystalline Bi$_x$Se$_{1-x}$
Authors:
Isabel C Arango,
Alberto Anadón,
Silvestre Novoa,
Van Tuong Pham,
Won Young Choi,
Junior Alegre,
Laurent Badie,
Andrey Chuvilin,
Sébastien Petit-Watelot,
Luis E Hueso,
Fèlix Casanova,
Juan-Carlos Rojas-Sánchez
Abstract:
Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin H…
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Topological materials are of high interest due to the promise to obtain low power and fast memory devices based on efficient spin-orbit torque switching or spin-orbit magnetic state read-out. In particular, sputtered polycrystalline Bi$_x$Se$_{1-x}$ is one of the materials with more potential for this purpose since it is relatively easy to fabricate and has been reported to have a very high spin Hall angle. We study the spin-to-charge conversion in Bi$_x$Se$_{1-x}$ using the spin pum** technique coming from the ferromagnetic resonance in a contiguous permalloy thin film. We put a special emphasis on the interfacial properties of the system. Our results show that the spin Hall angle of Bi$_x$Se$_{1-x}$ has an opposite sign to the one of Pt. The charge current arising from the spin-to-charge conversion is, in contrast, lower than Pt by more than one order of magnitude. We ascribe this to the interdiffusion of Bi$_x$Se$_{1-x}$ and permalloy and the changes in chemical composition produced by this effect, which is an intrinsic characteristic of the system and is not considered in many other studies.
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Submitted 16 June, 2023; v1 submitted 24 December, 2022;
originally announced December 2022.
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Directional self-propelled transport of coalesced droplets on a superhydrophilic cylindrical wire
Authors:
Leyun Feng,
Youhua Jiang,
Christian Machado,
Wonjae Choi,
Neelesh A. Patankar,
Kyoo-Chul Park
Abstract:
Droplets coalescing on flat surfaces tend to end up with the smaller droplet migrating into the larger one. We report a counter-intuitive droplet coalescence pattern on a superhydrophilic cylindrical wire, where the larger droplet is pulled toward the smaller one. Consequently, the center of the combined mass significantly moves toward, often beyond, the original location of the smaller droplet. T…
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Droplets coalescing on flat surfaces tend to end up with the smaller droplet migrating into the larger one. We report a counter-intuitive droplet coalescence pattern on a superhydrophilic cylindrical wire, where the larger droplet is pulled toward the smaller one. Consequently, the center of the combined mass significantly moves toward, often beyond, the original location of the smaller droplet. This phenomenon occurs primarily because the viscous friction that a droplet experiences on a cylindrical wire is not positively correlated with the size of the droplet, unlike the droplets coalescing on flat surfaces. We conducted a dimensional analysis based on a mass-spring-damper (MSD) model. Our model predicts a variety of coalescence patterns as a function of the ratio between droplet sizes, and the prediction matches the experimental observation.
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Submitted 20 November, 2022;
originally announced November 2022.
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Emergence of large spin-charge interconversion at an oxidized Cu/W interface
Authors:
Inge Groen,
Van Tuong Pham,
Stefan Ilić,
Won Young Choi,
Andrey Chuvilin,
Edurne Sagasta,
Diogo C. Vaz,
Isabel C. Arango,
Nerea Ontoso,
F. Sebastian Bergeret,
Luis E. Hueso,
Ilya V. Tokatly,
Fèlix Casanova
Abstract:
Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study t…
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Spin-orbitronic devices can integrate memory and logic by exploiting spin-charge interconversion (SCI), which is optimized by design and materials selection. In these devices, such as the magnetoelectric spin-orbit (MESO) logic, interfaces are crucial elements as they can prohibit or promote spin flow in a device as well as possess spin-orbit coupling resulting in interfacial SCI. Here, we study the origin of SCI in a Py/Cu/W lateral spin valve and quantify its efficiency. An exhaustive characterization of the interface between Cu and W electrodes uncovers the presence of an oxidized layer (WO$_x$). We determine that the SCI occurs at the Cu/WO$_x$ interface with a temperature-independent interfacial spin-loss conductance of $G_{||} \approx$ 20 $\times$ 10$^{13} Ω^{-1}m^{-2}$ and an interfacial spin-charge conductivity $σ_{SC}=-$1610 $Ω^{-1}cm^{-1}$ at 10 K ($-$830 $Ω^{-1}cm^{-1}$ at 300 K). This corresponds to an efficiency given by the inverse Edelstein length $λ_{IEE}=-$0.76 nm at 10 K ($-$0.4 nm at 300 K), which is remarkably larger than in metal/metal and metal/oxide interfaces and bulk heavy metals. The large SCI efficiency at such an oxidized interface is a promising candidate for the magnetic readout in MESO logic devices.
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Submitted 16 November, 2022;
originally announced November 2022.
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All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$
Authors:
Won Young Choi,
Isabel C. Arango,
Van Tuong Pham,
Diogo C. Vaz,
Haozhe Yang,
Inge Groen,
Chia-Ching Lin,
Emily S. Kabir,
Kaan Oguz,
Punyashloka Debashis,
John J. Plombon,
Hai Li,
Dmitri E. Nikonov,
Andrey Chuvilin,
Luis E. Hueso,
Ian A. Young,
Fèlix Casanova
Abstract:
One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charg…
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One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.
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Submitted 18 October, 2022;
originally announced October 2022.
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Controlling 3D spin textures by manipulating sign and amplitude of interlayer DMI with electrical current
Authors:
Fabian Kammerbauer,
Won-Young Choi,
Frank Freimuth,
Kyujoon Lee,
Robert Frömter,
Dong-Soo Han,
Henk J. M. Swagten,
Yuriy Mokrousov,
Mathias Kläui
Abstract:
The recently discovered interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) in multilayers with perpendicular magnetic anisotropy favors the canting of spins in the in-plane direction and could thus enable new exciting spin textures such as Hopfions in continuous multilayer films. A key requirement is to control the IL-DMI and so in this study, the influence of an electric current on the IL-DMI…
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The recently discovered interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) in multilayers with perpendicular magnetic anisotropy favors the canting of spins in the in-plane direction and could thus enable new exciting spin textures such as Hopfions in continuous multilayer films. A key requirement is to control the IL-DMI and so in this study, the influence of an electric current on the IL-DMI is investigated by out-of-plane hysteresis loops of the anomalous Hall effect under applied in-plane magnetic fields. The direction of the in-plane field is varied to obtain a full azimuthal dependence, which allows us to quantify the effect on the IL-DMI. We observe a shift in the azimuthal dependence of the IL-DMI with increasing current, which can be understood from the additional in-plane symmetry breaking introduced by the current flow. Using an empirical model of two superimposed cosine functions we demonstrate the presence of a current-induced term that linearly increases the IL-DMI in the direction of current flow. With this, a new easily accessible possibility to manipulate 3D spin textures by current is realized. As most spintronic devices employ spin-transfer or spin-orbit torques to manipulate spin textures, the foundation to implement current-induced IL-DMI into thin-film devices is broadly available.
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Submitted 3 September, 2022;
originally announced September 2022.
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Tunable Ferromagnetism in LaCoO3 Epitaxial Thin Films
Authors:
Dongwon Shin,
Sangmoon Yoon,
Sehwan Song,
Sungkyun Park,
Ho Nyung Lee,
Woo Seok Choi
Abstract:
Ferromagnetic insulators play a crucial role in the development of low-dissipation quantum magnetic devices for spintronics. Epitaxial LaCoO3 thin film is a prominent ferromagnetic insulator, in which the robust ferromagnetic ordering emerges owing to epitaxial strain. Whereas it is evident that strong spin-lattice coupling induces ferromagnetism, the reported ferromagnetic properties of epitaxial…
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Ferromagnetic insulators play a crucial role in the development of low-dissipation quantum magnetic devices for spintronics. Epitaxial LaCoO3 thin film is a prominent ferromagnetic insulator, in which the robust ferromagnetic ordering emerges owing to epitaxial strain. Whereas it is evident that strong spin-lattice coupling induces ferromagnetism, the reported ferromagnetic properties of epitaxially strained LaCoO3 thin films were highly consistent. For example, even under largely modulated degree of strain, the reported Curie temperatures of epitaxially strained LaCoO3 thin films lie within 80-85 K, without much deviation. In this study, substantial enhancement (~18%) in the Curie temperature of epitaxial LaCoO3 thin films is demonstrated via crystallographic orientation dependence. By changing the crystallographic orientation of the films from (111) to (110), the crystal-field energy was reduced and the charge transfer between the Co and O orbitals was enhanced. These modifications led to a considerable enhancement of the ferromagnetic properties (including the Curie temperature and magnetization), despite the identical nominal degree of epitaxial strain. The findings of this study provide insights into facile tunability of ferromagnetic properties via structural symmetry control in LaCoO3.
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Submitted 16 June, 2022;
originally announced June 2022.
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Atomistic Engineering of Phonons in Functional Oxide Heterostructures
Authors:
Seung Gyo Jeong,
Ambrose Seo,
Woo Seok Choi
Abstract:
Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of typical semiconductors. Yet, artificial engi…
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Engineering of phonons, i.e., collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron-phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon-engineering have been largely limited to the high-quality heterostructures of typical semiconductors. Yet, artificial engineering of phonons in a variety of materials with functional properties, such as complex oxides, will yield unprecedented applications of coherent tunable phonons in future quantum acoustic devices. In this study, we demonstrate artificial engineering of phonons in the atomic-scale SrRuO3/SrTiO3 superlattices, wherein tunable phonon modes were observed via confocal Raman spectroscopy. In particular, the coherent superlattices led to the backfolding of acoustic phonon dispersion, resulting in zone-folded acoustic phonons in the THz frequency domain. We could further fine-tune the frequencies from 1 to 2 THz via atomic-scale precision thickness control. In addition, we observed a polar optical phonon originating from the local inversion symmetry breaking in the artificial oxide superlattices, exhibiting emergent functionality. Our approach of atomic-scale heterostructuring of complex oxides will vastly expand material systems for quantum acoustic devices, especially with the viability of functionality integration.
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Submitted 3 February, 2022;
originally announced February 2022.
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Unconventional interlayer exchange coupling via chiral phonons in synthetic magnetic oxide heterostructures
Authors:
Seung Gyo Jeong,
Jiwoong Kim,
Ambrose Seo,
Sungkyun Park,
Hu Young Jeong,
Young-Min Kim,
Valeria Lauter,
Takeshi Egam,
Jung Hoon Han,
Woo Seok Choi
Abstract:
Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) he…
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Chiral symmetry breaking of phonons plays an essential role in emergent quantum phenomena owing to its strong coupling to spin degree of freedom. However, direct experimental evidence of the chiral phonon-spin coupling is lacking. In this study, we report a chiral phonon-mediated interlayer exchange interaction in atomically controlled ferromagnetic metal (SrRuO3)-nonmagnetic insulator (SrTiO3) heterostructures. Owing to the unconventional interlayer exchange interaction, we have observed rotation of magnetic moments as a function of nonmagnetic insulating spacer thickness, resulting in a spin spiral state. The chiral phonon-spin coupling is further confirmed by phonon Zeeman effects. The existence of the chiral phonons and their interplay with spins along with our atomic-scale heterostructure approach open a window to unveil the crucial roles of chiral phonons in magnetic materials.
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Submitted 3 February, 2022;
originally announced February 2022.
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Pairing Instabilities of the Yukawa-SYK Models with Controlled Fermion Incoherence
Authors:
Wonjune Choi,
Omid Tavakol,
Yong Baek Kim
Abstract:
The interplay of non-Fermi liquid and superconductivity born out of strong dynamical interactions is at the heart of the physics of unconventional superconductivity. As a solvable platform of the strongly correlated superconductors, we study the pairing instabilities of the Yukawa-Sachdev-Ye-Kitaev (Yukawa-SYK) model, which describes spin-1/2 fermions coupled to bosons by the random, all-to-all, s…
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The interplay of non-Fermi liquid and superconductivity born out of strong dynamical interactions is at the heart of the physics of unconventional superconductivity. As a solvable platform of the strongly correlated superconductors, we study the pairing instabilities of the Yukawa-Sachdev-Ye-Kitaev (Yukawa-SYK) model, which describes spin-1/2 fermions coupled to bosons by the random, all-to-all, spin-independent and dependent Yukawa interactions. In contrast to the previously studied models, the random Yukawa couplings are sampled from a collection of Gaussian ensembles whose variances follow a continuous distribution rather than being fixed to a constant. By tuning the analytic behaviour of the distribution, we could control the fermion incoherence to systematically examine various normal states ranging from the Fermi liquid to non-Fermi liquids that are different from the conformal solution of the SYK model with a constant variance. Using the linearised Eliashberg theory, we show that the onset of the unconventional spin-triplet pairing is preferred with the spin-dependent interactions while all pairing channels show instabilities with the spin-independent interactions. Although the interactions shorten the lifetime of the fermions in the non-Fermi liquid, the same interactions also dress the bosons to strengthen the tendency to pair the incoherent fermions. As a consequence, the onset temperature $T_c$ of the pairing is enhanced in the non-Fermi liquid compared to the case of the Fermi liquid.
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Submitted 25 January, 2023; v1 submitted 6 October, 2021;
originally announced October 2021.
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Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves
Authors:
C. K. Safeer,
Franz Herling,
Won Young Choi,
Nerea Ontoso,
Josep Ingla-Aynés,
Luis E. Hueso,
Fèlix Casanova
Abstract:
Understanding spin physics in graphene is crucial for develo** future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and…
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Understanding spin physics in graphene is crucial for develo** future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments.
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Submitted 3 November, 2021; v1 submitted 9 September, 2021;
originally announced September 2021.
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Anisotropic Pseudospin Tunneling in Two-Dimensional Black Phosphorus Junctions
Authors:
Young Woo Choi,
Hyoung Joon Choi
Abstract:
We investigate the role of pseudospin structure of few-layer black phosphorus (BP) in interband tunneling properties in lateral BP junctions. We find that interband tunneling is critically dependent on junction directions because of the anisotropic pseudospin structure of BP. When the armchair direction of BP is normal to the interface, pseudospins of incident and transmitted carriers are nearly a…
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We investigate the role of pseudospin structure of few-layer black phosphorus (BP) in interband tunneling properties in lateral BP junctions. We find that interband tunneling is critically dependent on junction directions because of the anisotropic pseudospin structure of BP. When the armchair direction of BP is normal to the interface, pseudospins of incident and transmitted carriers are nearly aligned so that interband tunneling is highly effective, analogous to the Klein tunneling in graphene. However, when the zigzag direction is normal to the interface, interband tunneling is suppressed by misaligned pseudospins. We also study junctions of band-gap inverted BP where the electronic structure is characterized by two Dirac cones. In this case, intervalley tunneling is prohibited either by momentum conservation or by pseudospin mismatch while intravalley tunneling is Klein-like irrespective of the junction direction. These results provide a foundation for develo** high-performance devices from BP and other pseudospin materials.
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Submitted 2 September, 2021;
originally announced September 2021.
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Large spin-charge interconversion induced by interfacial spin-orbit coupling in a highly conducting all-metallic system
Authors:
Van Tuong Pham,
Haozhe Yang,
Won Young Choi,
Alain Marty,
Inge Groen,
Andrey Chuvilin,
F. Sebastian Bergeret,
Luis E. Hueso,
Ilya V. Tokatly,
Fèlix Casanova
Abstract:
Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has bee…
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Spin-charge interconversion in systems with spin-orbit coupling has provided a new route for the generation and detection of spin currents in functional devices for memory and logic such as spin-orbit torque switching in magnetic memories or magnetic state reading in spin-based logic. Disentangling the bulk (spin Hall effect) from the interfacial (inverse spin galvanic effect) contribution has been a common issue to properly quantify the spin-charge interconversion in these systems, being the case of Au paradigmatic. Here, we obtain a large spin-charge interconversion at a highly conducting Au/Cu interface which is experimentally shown to arise from the inverse spin galvanic effect of the interface and not from the spin Hall effect of bulk Au. We use two parameters independent of the microscopic details to properly quantify the spin-charge interconversion and the spin losses due to the interfacial spin-orbit coupling, providing an adequate benchmarking to compare with any spin-charge interconversion system. The good performance of this metallic interface, not based in Bi, opens the path to the use of much simpler light/heavy metal systems.
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Submitted 27 June, 2024; v1 submitted 23 August, 2021;
originally announced August 2021.
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Correlated Oxide Dirac Semimetal in the Extreme Quantum Limit
Authors:
Jong Mok Ok,
Narayan Mohanta,
Jie Zhang,
Sangmoon Yoon,
Satoshi Okamoto,
Eun Sang Choi,
Hua Zhou,
Megan Briggeman,
Patrick Irvin,
Andrew R. Lupini,
Yun-Yi Pai,
Elizabeth Skoropata,
Changhee Sohn,
Haoxiang Li,
Hu Miao,
Benjamin Lawrie,
Woo Seok Choi,
Gyula Eres,
Jeremy Levy,
Ho Nyung Lee
Abstract:
Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band struct…
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Quantum materials (QMs) with strong correlation and non-trivial topology are indispensable to next-generation information and computing technologies. Exploitation of topological band structure is an ideal starting point to realize correlated topological QMs. Herein, we report that strain-induced symmetry modification in correlated oxide SrNbO3 thin films creates an emerging topological band structure. Dirac electrons in strained SrNbO3 films reveal ultra-high mobility (100,000 cm2/Vs), exceptionally small effective mass (0.04me), and non-zero Berry phase. More importantly, strained SrNbO3 films reach the extreme quantum limit, exhibiting a sign of fractional occupation of Landau levels and giant mass enhancement. Our results suggest that symmetry-modified SrNbO3 is a rare example of a correlated topological QM, in which strong correlation of Dirac electrons leads to the realization of fractional occupation of Landau levels.
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Submitted 18 August, 2021;
originally announced August 2021.
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Defect engineering of magnetic ground state in EuTiO$_3$ epitaxial thin films
Authors:
Dongwon Shin,
Inseo Kim,
Sehwan Song,
Yu-Seong Seo,
Jungseek Hwang,
Sungkyun Park,
Minseok Choi,
Woo Seok Choi
Abstract:
Atomistic defect engineering through the pulsed laser epitaxy of perovskite transition metal oxides offers facile control of their emergent opto-electromagnetic and energy properties. Among the various perovskite oxides, EuTiO3 exhibits a strong coupling between the lattice, electronic, and magnetic degrees of freedom. This coupling is highly susceptible to atomistic defects. In this study, we inv…
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Atomistic defect engineering through the pulsed laser epitaxy of perovskite transition metal oxides offers facile control of their emergent opto-electromagnetic and energy properties. Among the various perovskite oxides, EuTiO3 exhibits a strong coupling between the lattice, electronic, and magnetic degrees of freedom. This coupling is highly susceptible to atomistic defects. In this study, we investigated the magnetic phase of EuTiO$_3$ epitaxial thin films via systematic defect engineering. A magnetic phase transition from an antiferromagnet to a ferromagnet was observed when the unit cell volume of EuTiO3 expanded due to the introduction of Eu-O vacancies. Optical spectroscopy and density functional theory calculations show that the change in the electronic structure as the ferromagnetic phase emerges can be attributed to the weakened Eu-Ti-Eu super-exchange interaction and the developed ferromagnetic Eu-O-Eu interaction. Facile defect engineering in EuTiO$_3$ thin films facilitates understanding and tailoring of their magnetic ground state.
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Submitted 16 July, 2021;
originally announced July 2021.
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Epitaxial stabilization of metastable 3C BaRuO3 thin film with ferromagnetic non-Fermi liquid phase
Authors:
Sang A Lee,
Jong Mok Ok,
Jegon Lee,
Jae-Yeol Hwang,
Sangmon Yoon,
Se-Jeong Park,
Sehwan Song,
Jong-Seong Bae,
Sungkyun Park,
Ho Nyung Lee,
Woo Seok Choi
Abstract:
Thin films of perovskite Ruthenates of the general formula ARuO3 (A = Ca and Sr) are versatile electrical conductors for viable oxide electronics. They are also scientifically intriguing, as they exhibit non-trivial electromagnetic ground states depending on the A-site element. Among them, realization of the cubic perovskite (3C) BaRuO3 thin film has been a challenge so far, because the 3C phase i…
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Thin films of perovskite Ruthenates of the general formula ARuO3 (A = Ca and Sr) are versatile electrical conductors for viable oxide electronics. They are also scientifically intriguing, as they exhibit non-trivial electromagnetic ground states depending on the A-site element. Among them, realization of the cubic perovskite (3C) BaRuO3 thin film has been a challenge so far, because the 3C phase is metastable with the largest formation energy among the various polymorph phases of BaRuO3. In this study, we successfully prepared 3C BaRuO3 thin films employing epitaxial stabilization. The 3C BaRuO3 thin films show itinerant ferromagnetism with a transition temperature of ~48 K and a non-Fermi liquid phase. The epitaxial stabilization of the 3C BaRuO3 further enabled us to make a standard comparison of perovskite Ruthenates thin films, thereby establishing the importance of the Ru-O orbital hybridization in understanding the itinerant magnetic system.
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Submitted 15 July, 2021;
originally announced July 2021.
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Color of Copper/Copper oxide
Authors:
Su Jae Kim,
Seonghoon Kim,
Jegon Lee,
Youngjae Jo,
Yu-Seong Seo,
Myounghoon Lee,
Yousil Lee,
Chae Ryong Cho,
Jong-pil Kim,
Miyeon Cheon,
Jungseek Hwang,
Yong In Kim,
Young-Hoon Kim,
Young-Min Kim,
Aloysius Soon,
Myunghwan Choi,
Woo Seok Choi,
Se-Young Jeong,
Young Hee Lee
Abstract:
Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer t…
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Stochastic inhomogeneous oxidation is an inherent characteristic of copper (Cu), often hindering color tuning and bandgap engineering of oxides. Coherent control of the interface between metal and metal oxide remains unresolved. We demonstrate coherent propagation of an oxidation front in single-crystal Cu thin film to achieve a full-color spectrum for Cu by precisely controlling its oxide-layer thickness. Grain boundary-free and atomically flat films prepared by atomic-sputtering epitaxy allow tailoring of the oxide layer with an abrupt interface via heat treatment with a suppressed temperature gradient. Color tuning of nearly full-color RGB indices is realized by precise control of oxide-layer thickness; our samples covered ~50.4% of the sRGB color space. The color of copper/copper oxide is realized by the reconstruction of the quantitative yield color from oxide pigment (complex dielectric functions of Cu2O) and light-layer interference (reflectance spectra obtained from the Fresnel equations) to produce structural color. We further demonstrate laser-oxide lithography with micron-scale linewidth and depth through local phase transformation to oxides embedded in the metal, providing spacing necessary for semiconducting transport and optoelectronics functionality.
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Submitted 15 July, 2021;
originally announced July 2021.
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Atomic structure of initial nucleation layer in hexagonal perovskite BaRuO$_3$ thin films
Authors:
Sangmoon Yoon,
Jong Mok Ok,
Sang A Lee,
Jegon Lee,
Andrew R. Lupini,
Woo Seok Choi,
Ho Nyung Lee
Abstract:
Hexagonal perovskites are an attractive group of materials due to their various polymorph phases and rich structure-property relationships. BaRuO3 (BRO) is a prototypical hexagonal perovskite, in which the electromagnetic properties are significantly modified depending on its atomic structure. Whereas thin-film epitaxy would vastly expand the application of hexagonal perovskites by epitaxially sta…
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Hexagonal perovskites are an attractive group of materials due to their various polymorph phases and rich structure-property relationships. BaRuO3 (BRO) is a prototypical hexagonal perovskite, in which the electromagnetic properties are significantly modified depending on its atomic structure. Whereas thin-film epitaxy would vastly expand the application of hexagonal perovskites by epitaxially stabilizing various metastable polymorphs, the atomic structure of epitaxial hexagonal perovskites, especially at the initial growth stage, has rarely been investigated. In this study, we show that an intriguing nucleation behavior takes place during the initial stabilization of a hexagonal perovskite 9R BaRuO3 (BRO) thin film on a (111) SrTiO3 (STO) substrate. We use high-resolution high-angle annular dark field scanning transmission electron microscopy in combination with geometrical phase analysis to understand the local strain relaxation behavior. We find that nano-scale strained layers, composed of different RuO6 octahedral stacking, are initially formed at the interface, followed by a relaxed single crystal9R BRO thin film. Within the interface layer, hexagonal BROs are nucleated on the STO (111) substrate by both corner- and face-sharing. More interestingly, we find that the boundaries between the differently-stacked nucleation layers, i.e. heterostructural boundaries facilitates strain relaxation, in addition to the formation of conventional misfit dislocations evolving from homostructural boundaries. Our observations reveal an important underlying mechanism to understand the thin-film epitaxy and strain accommodation in hexagonal perovskites.
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Submitted 15 July, 2021;
originally announced July 2021.
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Tailoring topological Hall effect in SrRuO3/SrTiO3 superlattices
Authors:
Seong Won Cho,
Seung Gyo Jeong,
Hee Young Kwon,
Sehwan Song,
Seungwu Han,
Jung Hoon Han,
Sungkyun Park,
Woo Seok Choi,
Suyoun Lee,
Jun Woo Choi
Abstract:
Investigating the effects of the complex magnetic interactions on the formation of nontrivial magnetic phases enables a better understanding of magnetic materials. Moreover, an effective method to systematically control those interactions and phases could be extensively utilized in spintronic devices. SrRuO3 heterostructures function as a suitable material system to investigate the complex magneti…
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Investigating the effects of the complex magnetic interactions on the formation of nontrivial magnetic phases enables a better understanding of magnetic materials. Moreover, an effective method to systematically control those interactions and phases could be extensively utilized in spintronic devices. SrRuO3 heterostructures function as a suitable material system to investigate the complex magnetic interactions and the resultant formation of topological magnetic phases, as the heterostructuring approach provides an accessible controllability to modulate the magnetic interactions. In this study, we have observed that the Hall effect of SrRuO3/SrTiO3 superlattices varies nonmonotonically with the repetition number (z). Using Monte Carlo simulations, we identify a possible origin of this experimental observation: the interplay between the Dzyaloshinskii-Moriya interaction and dipole-dipole interaction, which have differing z-dependence, might result in a z-dependent modulation of topological magnetic phases. This approach provides not only a collective understanding of the magnetic interactions in artificial heterostructures but also a facile control over the skyrmion phases.
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Submitted 15 July, 2021;
originally announced July 2021.
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A hybrid percolation transition at a finite transition point in scale-free networks
Authors:
K. Choi,
Wonjun Choi,
B. Kahng
Abstract:
Percolation transition (PT) means the formation of a macroscopic-scale large cluster, which exhibits a continuous transition. However, when the growth of large clusters is globally suppressed, the type of PT is changed to a discontinuous transition for random networks. A question arises as to whether the type of PT is also changed for scale-free (SF) network, because the existence of hubs incites…
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Percolation transition (PT) means the formation of a macroscopic-scale large cluster, which exhibits a continuous transition. However, when the growth of large clusters is globally suppressed, the type of PT is changed to a discontinuous transition for random networks. A question arises as to whether the type of PT is also changed for scale-free (SF) network, because the existence of hubs incites the formation of a giant cluster. Here, we apply a global suppression rule to the static model for SF networks, and investigate properties of the PT. We find that even for SF networks with the degree exponent $2 < λ<3$, a hybrid PT occurs at a finite transition point $t_c$, which we can control by the suppression strength. The order parameter jumps at $t_c^-$ and exhibits a critical behavior at $t_c^+$.
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Submitted 15 May, 2021;
originally announced May 2021.
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Tuning magnetic and optical properties through strain in epitaxial LaCrO3 thin films
Authors:
Yogesh Sharma,
Binod Paudel,
Jegon Lee,
Woo Seok Choi,
Zhenzhong Yang,
Han Wang,
Yingge Du,
Kyeong Tae Kang,
Ghanshyam Pilania,
Ai** Chen
Abstract:
We report on the effect of epitaxial strain on magnetic and optical properties of perovskite LaCrO3 (LCO) single crystal thin films. Epitaxial LCO thin films are grown by pulsed laser deposition on proper choice of substrates to impose different strain states. A combined experimental and theoretical approach is used to demonstrate the direct correlation between lattice-strain and functional proper…
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We report on the effect of epitaxial strain on magnetic and optical properties of perovskite LaCrO3 (LCO) single crystal thin films. Epitaxial LCO thin films are grown by pulsed laser deposition on proper choice of substrates to impose different strain states. A combined experimental and theoretical approach is used to demonstrate the direct correlation between lattice-strain and functional properties. The magnetization results show that the lattice anisotropy plays a critical role in controlling the magnetic behavior of LCO films. The strain induced tetragonality in the film lattice strongly affects the optical transitions and charge transfer gap in LCO. This study opens new possibilities to tailoring the functional properties of LCO and related materials by strain engineering in epitaxial growth.
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Submitted 6 May, 2021;
originally announced May 2021.
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Strain-induced atomic-scale building blocks for ferromagnetism in epitaxial LaCoO3
Authors:
Sangmoon Yoon,
Xiang Gao,
Jong Mok Ok,
Zhaoliang Liao,
Myung-Geun Han,
Yimei Zhu,
Panchapakesan Ganesh,
Matthew F. Chisholm,
Woo Seok Choi,
Ho Nyung Lee
Abstract:
The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain…
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The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain itself, but rather from the creation of compressed structural units within ferroelastically formed twin-wall domains. The compressed structural units are magnetically active with the rocksalt-type high-spin/low-spin order. Our study highlights that the ferroelastic nature of ferromagnetic structural units is important for understanding the intriguing ferromagnetic properties in LCO thin films.
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Submitted 4 May, 2021;
originally announced May 2021.
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Structural characterization and electronic structure of Li$_{3}$ClO glasses for solid-state Li-ion batteries
Authors:
Young Won Choi,
Moyses Araujo,
Levente Vitos,
Raquel Lizárraga
Abstract:
Energy storage technologies that can meet the unprecedented demands of a sustainable energy system based on intermittent energy sources require new battery materials. We investigate high ionic conductors, Li$_3$ClO glasses. In the present work we use a first principles method to model the amorphous structure of the glass. We characterize the structure by means of radial distribution functions, rad…
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Energy storage technologies that can meet the unprecedented demands of a sustainable energy system based on intermittent energy sources require new battery materials. We investigate high ionic conductors, Li$_3$ClO glasses. In the present work we use a first principles method to model the amorphous structure of the glass. We characterize the structure by means of radial distribution functions, radial disctributions functions and coordination numbers. We compare to their crystalline counterparts. The electronic structure of the glass is compared to that of the crystalline material. The band gap of the glass appears to be slighly reduced compared to that of the crystal. We also investigate the chemical stability of the glass against Li metal electrode. The electrochemical stability of the glassy electrolite is evaluated against Li metal.
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Submitted 8 April, 2021;
originally announced April 2021.
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Atomistic deformation behavior of single and twin crystalline Cu nanopillars with preexisting dislocations
Authors:
Won-Seok Ko,
Alexander Stukowski,
Raheleh Hadian,
Ali Nematollahi,
Jong Bae Jeon,
Won Seok Choi,
Gerhard Dehm,
Jörg Neugebauer,
Christoph Kirchlechner,
Blazej Grabowski
Abstract:
Molecular dynamics simulations are performed to investigate the role of a coherent Σ3 (111) twin boundary on the plastic deformation behavior of Cu nanopillars. Our work reveals that the mechanical response of pillars with and without the twin boundary is decisively driven by the characteristics of initial dislocation sources. In the condition of comparably large pillar size and abundant initial m…
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Molecular dynamics simulations are performed to investigate the role of a coherent Σ3 (111) twin boundary on the plastic deformation behavior of Cu nanopillars. Our work reveals that the mechanical response of pillars with and without the twin boundary is decisively driven by the characteristics of initial dislocation sources. In the condition of comparably large pillar size and abundant initial mobile dislocations, overall yield and flow stresses are controlled by the longest, available mobile dislocation. An inverse correlation of the yield and flow stresses with the length of the longest dislocation is established, and its extrapolation agrees well with experimental yield stress data. The experimentally reported subtle differences in yield and flow stresses between pillars with and without the twin boundary are thus likely related to the maximum lengths of the mobile dislocations. In the condition of comparably small pillar size, for which a reduction of mobile dislocations during heat treatment and mechanical loading occurs, the mechanical response of pillars with and without the twin boundary can be clearly distinguished. Dislocation starvation during deformation is more clearly present in pillars without the twin boundary than in pillars with the twin boundary because the twin boundary acts as a pinning surface for the dislocation network.
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Submitted 8 April, 2021; v1 submitted 8 April, 2021;
originally announced April 2021.
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Modulating Curie Temperature and Magnetic Anisotropy in Nanoscale Layered Cr_{2}Te_{3} Films: Implications for Room-Temperature Spintronics
Authors:
In Hak Lee,
Byoung Ki Choi,
Hyuk ** Kim,
Min Jay Kim,
Hu Young Jeong,
Jong Hoon Lee,
Seung-Young Park,
Younghun Jo,
Chanki Lee,
Jun Woo Choi,
Seong Won Cho,
Suyuon Lee,
Younghak Kim,
Beom Hyun Kim,
Kyeong Jun Lee,
** Eun Heo,
Seo Hyoung Chang,
Feng** Li,
Bheema Lingam Chittari,
Jeil Jung,
Young Jun Chang
Abstract:
Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}…
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Nanoscale layered ferromagnets have demonstrated fascinating two-dimensional magnetism down to atomic layers, providing a peculiar playground of spin orders for investigating fundamental physics and spintronic applications. However, strategy for growing films with designed magnetic properties is not well established yet. Herein, we present a versatile method to control the Curie temperature (T_{C}) and magnetic anisotropy during growth of ultrathin Cr_{2}Te_{3} films. We demonstrate increase of the TC from 165 K to 310 K in sync with magnetic anisotropy switching from an out-of-plane orientation to an in-plane one, respectively, via controlling the Te source flux during film growth, leading to different c-lattice parameters while preserving the stoichiometries and thicknesses of the films. We attributed this modulation of magnetic anisotropy to the switching of the orbital magnetic moment, using X-ray magnetic circular dichroism analysis. We also inferred that different c-lattice constants might be responsible for the magnetic anisotropy change, supported by theoretical calculations. These findings emphasize the potential of ultrathin Cr_{2}Te_{3} films as candidates for develo** room-temperature spintronics applications and similar growth strategies could be applicable to fabricate other nanoscale layered magnetic compounds.
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Submitted 5 April, 2021;
originally announced April 2021.
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Dichotomy of Electron-Phonon Coupling in Graphene Moiré Flat Bands
Authors:
Young Woo Choi,
Hyoung Joon Choi
Abstract:
Graphene moire superlattices are outstanding platforms to study correlated electron physics and superconductivity with exceptional tunability. However, robust superconductivity has been measured only in magic-angle twisted bilayer graphene (MA-TBG) and magic-angle twisted trilayer graphene (MA-TTG). The absence of a superconducting phase in certain moire flat bands raises a question on the superco…
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Graphene moire superlattices are outstanding platforms to study correlated electron physics and superconductivity with exceptional tunability. However, robust superconductivity has been measured only in magic-angle twisted bilayer graphene (MA-TBG) and magic-angle twisted trilayer graphene (MA-TTG). The absence of a superconducting phase in certain moire flat bands raises a question on the superconducting mechanism. In this work, we investigate electronic structure and electron-phonon coupling in graphene moire superlattices based on atomistic calculations. We show that electron-phonon coupling strength lambda is dramatically different among graphene moire flat bands. The total strength lambda is very large (lambda>1) for MA-TBG and MA-TTG, both of which display robust superconductivity in experiments. However, lambda is an order of magnitude smaller in twisted double bilayer graphene (TDBG) and twisted monolayer-bilayer graphene (TMBG) where superconductivity is reportedly rather weak or absent. We find that the Bernal-stacked layers in TDBG and TMBG induce sublattice polarization in the flat-band states, suppressing intersublattice electron-phonon matrix elements. We also obtain the nonadiabatic superconducting Tc that matches well with the experimental results. Our results clearly show a correlation between strong electron-phonon coupling and experimental observations of robust superconductivity.
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Submitted 2 October, 2021; v1 submitted 30 March, 2021;
originally announced March 2021.
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Dissecting functional degradation in NiTi shape-memory-alloys containing amorphous regions via atomistic simulations
Authors:
Won-Seok Ko,
Won Seok Choi,
Guanglong Xu,
Pyuck-Pa Cho,
Yuji Ikeda,
Blazej Grabowski
Abstract:
Molecular dynamics simulations are performed to provide a detailed understanding of the functional degradation of shape memory alloys at small scale. The origin of the experimentally reported accumulation of plastic deformation and the anomalous sudden increase of the residual strain under cyclic mechanical loading are explained by detailed insights into the relevant atomic scale processes. Our wo…
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Molecular dynamics simulations are performed to provide a detailed understanding of the functional degradation of shape memory alloys at small scale. The origin of the experimentally reported accumulation of plastic deformation and the anomalous sudden increase of the residual strain under cyclic mechanical loading are explained by detailed insights into the relevant atomic scale processes. Our work reveals that the mechanical response of shape-memory-alloy pillars under cyclic compression is significantly influenced by the presence of an amorphous-like surface region as experimentally induced by focused ion beam milling. The main factor responsible for the observed degradation of superelasticity under cyclic loading is the accumulated plastic deformation and the resultant retained martensite originating from a synergetic contribution of the amorphous and crystalline shape-memory-alloy regions. We show that the reported sudden diminishment of the stress plateaus and hysteresis under cyclic loading is caused by the increased stability of the martensite phase due to the presence of the amorphous phase. Based on the identified mechanism responsible for the degradation, we validate reported methods of recovering the superelasticity and propose a new method to prohibit the synergetic contribution of the amorphous and crystalline regions, such as to achieve a sustainable operation of shape memory alloys at small scale.
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Submitted 31 March, 2021; v1 submitted 26 March, 2021;
originally announced March 2021.
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Human Brain Map** with Multi-Thousand Channel PtNRGrids Resolves Novel Spatiotemporal Dynamics
Authors:
Youngbin Tchoe,
Andrew M. Bourhis,
Daniel R. Cleary,
Brittany Stedelin,
Jihwan Lee,
Karen J. Tonsfeldt,
Erik C. Brown,
Dominic Siler,
Angelique C. Paulk,
Jimmy C. Yang,
Hongseok Oh,
Yun Goo Ro,
Woo** Choi,
Keundong Lee,
Samantha Russman,
Mehran Ganji,
Ian Galton,
Sharona Ben-Haim,
Ahmed M. Raslan,
Shadi A. Dayeh
Abstract:
Electrophysiological devices are critical for map** eloquent and diseased brain regions and for therapeutic neuromodulation in clinical settings and are extensively utilized for research in brain-machine interfaces. However, the existing devices are often limited in either spatial resolution or cortical coverage, even including those with thousands of channels used in animal experiments. Here, w…
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Electrophysiological devices are critical for map** eloquent and diseased brain regions and for therapeutic neuromodulation in clinical settings and are extensively utilized for research in brain-machine interfaces. However, the existing devices are often limited in either spatial resolution or cortical coverage, even including those with thousands of channels used in animal experiments. Here, we developed scalable manufacturing processes and dense connectorization to achieve reconfigurable thin-film, multi-thousand channel neurophysiological recording grids using platinum-nanorods (PtNRGrids). With PtNRGrids, we have achieved a multi-thousand channel array of small (30 μm) contacts with low impedance, providing unparalleled spatial and temporal resolution over a large cortical area. We demonstrate that PtNRGrids can resolve sub-millimeter functional organization of the barrel cortex in anesthetized rats that captured the histochemically-demonstrated structure. In the clinical setting, PtNRGrids resolved fine, complex temporal dynamics from the cortical surface in an awake human patient performing gras** tasks. Additionally, the PtNRGrids identified the spatial spread and dynamics of epileptic discharges in a patient undergoing epilepsy surgery at 1 mm spatial resolution, including activity induced by direct electrical stimulation. Collectively, these findings demonstrate the power of the PtNRGrids to transform clinical map** and research with brain-machine interfaces and highlights a path toward novel therapeutics.
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Submitted 19 August, 2021; v1 submitted 16 March, 2021;
originally announced March 2021.
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Symmetry-Driven Spin-Wave Gap Modulation in Nanolayered SrRuO3/SrTiO3 Heterostructures: Implications for Spintronic Applications
Authors:
Seung Gyo Jeong,
Hyeonbeom Kim,
Sung Ju Hong,
Dongseok Suh,
Woo Seok Choi
Abstract:
A strong correlation between magnetic interaction and topological symmetries leads to unconventional magneto-transport behavior. Weyl fermions induce topologically protected spin-momentum locking, which is closely related to spin-wave gap formation in magnetic crystals. Ferromagnetic SrRuO3, regarded as a strong candidate for Weyl semimetal, inherently possesses a nonzero spin-wave gap owing to it…
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A strong correlation between magnetic interaction and topological symmetries leads to unconventional magneto-transport behavior. Weyl fermions induce topologically protected spin-momentum locking, which is closely related to spin-wave gap formation in magnetic crystals. Ferromagnetic SrRuO3, regarded as a strong candidate for Weyl semimetal, inherently possesses a nonzero spin-wave gap owing to its strong magnetic anisotropy. In this paper, we propose a method to control the spin-wave dynamics by nanolayer designing of the SrRuO3/SrTiO3 superlattices. In particular, the six-unit-cell-thick SrRuO3 layers within the superlattices undergo a phase transition in crystalline symmetry from orthorhombic to tetragonal, as the thickness of the SrTiO3 layers is modulated with atomic-scale precision. Consequently, the magnetic anisotropy, anomalous Hall conductivity, and spin-wave gap could be systematically manipulated. Such customization of magnetic anisotropy via nanoscale heterostructuring offers a novel control knob to tailor the magnon excitation energy for future spintronic applications, including magnon waveguides and filters. Our nanolayer approach unveils the important correlation between the tunable lattice degrees of freedom and spin dynamics in topologically non-trivial magnetic materials.
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Submitted 5 February, 2021;
originally announced February 2021.
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Effect of the sample work function on alkali metal dosing induced electronic structure change
Authors:
Saegyeol Jung,
Yukiaki Ishida,
Minsoo Kim,
Masamichi Nakajima,
Shigeyuki Ishida,
Hiroshi Eisaki,
Woojae Choi,
Yong Seung Kwon,
Jonathan Denlinger,
Toshio Otsu,
Yohei Kobayashi,
Soonsang Huh,
Changyoung Kim
Abstract:
Alkali metal dosing (AMD) has been widely used as a way to control do** without chemical substitution. This technique, in combination with angle resolved photoemission spectroscopy (ARPES), often provides an opportunity to observe unexpected phenomena. However, the amount of transferred charge and the corresponding change in the electronic structure vary significantly depending on the material.…
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Alkali metal dosing (AMD) has been widely used as a way to control do** without chemical substitution. This technique, in combination with angle resolved photoemission spectroscopy (ARPES), often provides an opportunity to observe unexpected phenomena. However, the amount of transferred charge and the corresponding change in the electronic structure vary significantly depending on the material. Here, we report study on the correlation between the sample work function and alkali metal induced electronic structure change for three iron-based superconductors: FeSe, Ba(Fe$_{0.94}$Co$_{0.06}$)$_{2}$As$_{2}$ and NaFeAs which share a similar Fermi surface topology. Electronic structure change upon monolayer of alkali metal dosing and the sample work function were measured by ARPES. Our results show that the degree of electronic structure change is proportional to the difference between the work function of the sample and Mulliken's absolute electronegativity of the dosed alkali metal. This finding provides a possible way to estimate the AMD induced electronic structure change.
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Submitted 29 January, 2021; v1 submitted 27 January, 2021;
originally announced January 2021.
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Crystalline symmetry-dependent magnon formation in itinerant ferromagnet SrRuO3
Authors:
Hyun Il Seo,
Sungmin Woo,
Jihyun Kim,
Seung Gyo Jeong,
Tuson Park,
Woo Seok Choi
Abstract:
SrRuO3 (SRO) is an itinerant ferromagnet with strong coupling between the charge, spin, and lattice degrees of freedom. This strong coupling suggests that the electronic and magnetic behaviors of SRO are highly susceptible to changes in the lattice distortion. Here we show how the spin interaction and resultant magnon formation change with the modification in the crystallographic orientation. We f…
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SrRuO3 (SRO) is an itinerant ferromagnet with strong coupling between the charge, spin, and lattice degrees of freedom. This strong coupling suggests that the electronic and magnetic behaviors of SRO are highly susceptible to changes in the lattice distortion. Here we show how the spin interaction and resultant magnon formation change with the modification in the crystallographic orientation. We fabricated SRO epitaxial thin films with (100), (110), and (111) surface orientations, to systematically modulate the spin interaction and spin dimensionality. The reduced spin dimensionality and enhanced exchange interaction in the (111)-oriented SRO thin film significantly suppresses magnon formation. Our study comprehensively demonstrates the facile tunability of magnon formation and spin interaction in correlated oxide thin films.
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Submitted 22 December, 2020;
originally announced December 2020.
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Substitutional VSn nanodispersed in MoS$_2$ film for Pt-scalable catalyst
Authors:
Frederick Osei-Tutu Agyapong-Fordjour,
Seok Joon Yun,
Hyung-** Kim,
Wooseon Choi,
Soo Ho Choi,
Laud Anim Adofo,
Stephen Boandoh,
Yong In Kim,
Soo Min Kim,
Young-Min Kim,
Young Hee Lee,
Young-Kyu Han,
Ki Kang Kim
Abstract:
Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient c…
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Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V, overpotential of -0.06 V at a current density of 10 mA cm-2 and exchange current density of 0.65 mA cm-2 at 0 V with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study adds insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution.
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Submitted 21 October, 2020;
originally announced October 2020.
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Spectroscopic fingerprints of gapped quantum spin liquids, both conventional and fractonic
Authors:
Rahul M. Nandkishore,
Wonjune Choi,
Yong Baek Kim
Abstract:
We explain how gapped quantum spin liquids, both conventional and 'fractonic', may be unambiguously diagnosed experimentally using the technique of multidimensional coherent spectroscopy. 'Conventional' gapped quantum spin liquids (e.g. $Z_2$ spin liquid) do not have clear signatures in linear response, but do have clear fingerprints in non-linear response, accessible through the already existing…
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We explain how gapped quantum spin liquids, both conventional and 'fractonic', may be unambiguously diagnosed experimentally using the technique of multidimensional coherent spectroscopy. 'Conventional' gapped quantum spin liquids (e.g. $Z_2$ spin liquid) do not have clear signatures in linear response, but do have clear fingerprints in non-linear response, accessible through the already existing experimental technique of two dimensional coherent spectroscopy. Type I fracton phases (e.g. X-cube) are (surprisingly) even easier to distinguish, with strongly suggestive features even in linear response, and unambiguous signatures in non-linear response. Type II fracton systems, like Haah's code, are most subtle, and may require consideration of high order non-linear response for unambiguous diagnosis.
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Submitted 15 October, 2020;
originally announced October 2020.