-
Controlling Moisture for Enhanced Ozone Decomposition: A Study of Water Effects on CeO$_2$ Surfaces and Catalytic Activity
Authors:
Suchitra Gupta,
Joon Hwan Choi,
Ho** Jeong,
Seung-Cheol Lee,
Satadeep Bhattacharjee
Abstract:
This study investigates the catalytic degradation of ground-level ozone on low-index stoichiometric and reduced CeO$_2$ surfaces using first-principles calculations. The presence of oxygen vacancies on the surface enhances the interaction between ozone and catalyst by serving as active sites for adsorption and decomposition. Our results suggest that the {111} surface has superior ozone decompositi…
▽ More
This study investigates the catalytic degradation of ground-level ozone on low-index stoichiometric and reduced CeO$_2$ surfaces using first-principles calculations. The presence of oxygen vacancies on the surface enhances the interaction between ozone and catalyst by serving as active sites for adsorption and decomposition. Our results suggest that the {111} surface has superior ozone decomposition performance due to unstable oxygen species resulting from reaction with catalysts. However, when water is present, it competes with ozone molecules for these active sites, resulting in reduced catalytic activity or water poisoning. A possible solution could be heat treatment that reduces the vacancy concentration, thereby increasing the available adsorption sites for ozone molecules while minimizing competitive adsorption by water molecules. These results suggest that controlling moisture content during operation is crucial for the efficient use of CeO$_2$-based catalysts in industrial applications to reduce ground-level ozone pollution.
△ Less
Submitted 6 February, 2024;
originally announced February 2024.
-
Understanding the Effects of Dielectric Property, Separation Distance, and Band Alignment on Interlayer Excitons in 2D Hybrid MoS2/WSe2 Heterostructures
Authors:
Jaehoon Ji,
Jong Hyun Choi
Abstract:
Two dimensional (2D) van der Waals heterostructures from transition metal dichalcogenide (TMDC) semiconductors show a new class of spatially separate excitons with extraordinary properties. The interlayer excitons (XI) have been studied extensively, yet the mechanisms that modulate XI are still not well understood. Here, we introduce several organic-layer-embedded hybrid heterostructures, MoS2/org…
▽ More
Two dimensional (2D) van der Waals heterostructures from transition metal dichalcogenide (TMDC) semiconductors show a new class of spatially separate excitons with extraordinary properties. The interlayer excitons (XI) have been studied extensively, yet the mechanisms that modulate XI are still not well understood. Here, we introduce several organic-layer-embedded hybrid heterostructures, MoS2/organic/WSe2, to study the binding energy of XI. We discover that the dielectric screening of the quasi-particle is reduced with organic molecules due to decreased dielectric constant and greater separation distance between the TMDC layers. As a result, a distinct blueshift is observed in interlayer emission. We also find that the band alignment at the heterointerface is critical. When the organic layer provides a staggered energy state, interlayer charge transfer can transition from tunneling to band-assisted transfer, further increasing XI emission energies due to a stronger dipolar interaction. The formation of XI may also be significantly suppressed with electron or hole trap** molecules. These findings should be useful in realizing XI-based optoelectronics.
△ Less
Submitted 27 February, 2021; v1 submitted 18 November, 2020;
originally announced November 2020.
-
Epitaxial single-crystal growth of transition metal dichalcogenide monolayers via atomic sawtooth Au surface
Authors:
Soo Ho Choi,
Hyung-** Kim,
Bumsub Song,
Yong In Kim,
Gyeongtak Han,
Hayoung Ko,
Stephen Boandoh,
Ji Hoon Choi,
Chang Seok Oh,
Jeong Won **,
Seok Joon Yun,
Bong Gyu Shin,
Hu Young Jeong,
Young-Min Kim,
Young-Kyu Han,
Young Hee Lee,
Soo Min Kim,
Ki Kang Kim
Abstract:
Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report th…
▽ More
Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) film has not been established to date. Here, we report the SC growth of TMdC monolayers in a centimeter scale via atomic sawtooth gold surface as a universal growth template. Atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission-electron-microscopy. Anisotropic adsorption energy of TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of Miller indices. Growth using atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2, WSe2, MoS2, MoSe2/WSe2 heterostructure, and W1-xMoxS2 alloy. Our strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures in a wafer scale, to further facilitate the applications of TMdCs in post silicon technology.
△ Less
Submitted 20 October, 2020;
originally announced October 2020.
-
Very high upper critical fields in MgB2 produced by selective tuning of impurity scattering
Authors:
A. Gurevich,
S. Patnaik,
V. Braccini,
K. H. Kim,
C. Mielke,
X. Song,
L. D. Cooley,
S. D. Bu,
D. M. Kim,
J. H. Choi,
L. J. Belenky,
J. Giencke,
M. K. Lee,
W. Tian,
X. Q. Pan,
A. Siri,
E. E. Hellstrom,
C. B. Eom,
D. C. Larbalestier
Abstract:
We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprat…
▽ More
We report a significant enhancement of the upper critical field $H_{c2}$ of different $MgB_2$ samples alloyed with nonmagnetic impurities. By studying films and bulk polycrystals with different resistivities $ρ$, we show a clear trend of $H_{c2}$ increase as $ρ$ increases. One particular high resistivity film had zero-temperature $H_{c2}(0)$ well above the $H_{c2}$ values of competing non-cuprate superconductors such as $Nb_3Sn$ and Nb-Ti. Our high-field transport measurements give record values $H_{c2}^\perp (0) \approx 34T$ and $H_{c2}\|(0) \approx 49 T$ for high resistivity films and $H_{c2}(0)\approx 29 T$ for untextured bulk polycrystals. The highest $H_{c2}$ film also exhibits a significant upward curvature of $H_{c2}(T)$, and temperature dependence of the anisotropy parameter $γ(T) = H_{c2}\|/ H_{c2}^\perp$ opposite to that of single crystals: $γ(T)$ decreases as the temperature decreases, from $γ(T_c) \approx 2$ to $γ(0) \approx 1.5$. This remarkable $H_{c2}$ enhancement and its anomalous temperature dependence are a consequence of the two-gap superconductivity in $MgB_2$, which offers special opportunities for further $H_{c2}$ increase by tuning of the impurity scattering by selective alloying on Mg and B sites. Our experimental results can be explained by a theory of two-gap superconductivity in the dirty limit. The very high values of $H_{c2}(T)$ observed suggest that $MgB_2$ can be made into a versatile, competitive high-field superconductor.
△ Less
Submitted 17 September, 2003; v1 submitted 20 May, 2003;
originally announced May 2003.
-
MgB2 Energy Gap Determination by Scanning Tunneling Spectroscopy
Authors:
T. W. Heitmann,
S. D. Bu,
D. M. Kim,
J. H. Choi,
J. Giencke,
C. B. Eom,
K. A. Regan,
N. Rogado,
M. A. Hayward,
T. He,
J. S. Slusky,
P. Khalifah,
M. Haas,
R. J. Cava,
D. C Larbalestier,
M. S. Rzchowski
Abstract:
We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-in…
▽ More
We report scanning tunneling spectroscopy (STS) measurements of the gap properties of both ceramic MgB2 and c-axis oriented epitaxial MgB2 thin films. Both show a temperature dependent zero bias conductance peak and evidence for two superconducting gaps. We report tunneling spectroscopy of superconductor-insulator-superconductor (S-I-S) junctions formed in two ways in addition to normal metal-insulator-superconductor (N-I-S) junctions. We find a gap delta=2.3-2.8 meV, with spectral features and temperature dependence that are consistent between S-I-S junction types. In addition, we observe evidence of a second, larger gap, delta=7.2 meV, consistent with a proposed two-band model.
△ Less
Submitted 29 September, 2003; v1 submitted 9 December, 2002;
originally announced December 2002.
-
Synthesis and Properties of c-axis Oriented Epitaxial MgB2 Thin Films
Authors:
S. D. Bu,
D. M. Kim,
J. H. Choi,
J. Giencke,
S. Patnaik,
L. Cooley,
E. E. Hellstrom,
D. C. Larbalestier,
C. B. Eom,
; J. Lettieri,
D. G. Schlom,
; W. Tian,
X. Pan
Abstract:
We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and…
▽ More
We report the growth and properties of epitaxial MgB2 thin films on (0001) Al2O3 substrates. The MgB2 thin films were prepared by depositing boron films via RF magnetron sputtering, followed by a post-deposition anneal at 850C in magnesium vapor. X-ray diffraction and cross-sectional TEM reveal that the epitaxial MgB2 films are oriented with their c-axis normal to the (0001) Al2O3 substrate and a 30 degree rotation in the ab-plane with respect to the substrate. The critical temperature was found to be 35 K and the anisotropy ratio, Hc2(parallel to the film) / Hc2(pendicular to the film), about 3 at 25K. The critical current densities at 4.2 K and 20 K (at 1 T perpendicular magnetic field) are 5x10E6 A/cm2 and 1x10E6 A/cm2, respectively. The controlled growth of epitaxial MgB2 thin films opens a new avenue in both understanding superconductivity in MgB2 and technological applications.
△ Less
Submitted 29 March, 2002;
originally announced April 2002.
-
Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films
Authors:
S. Patnaik,
L. D. Cooley,
A. Gurevich,
A. A. Polyanskii,
J. Jiang,
X. Y. Cai,
A. A. Squitieri,
M. T. Naus,
M. K. Lee,
J. H. Choi,
L. Belenky,
S. D. Bu,
J. Letteri,
X. Song,
D. G. Schlom,
S. E. Babcock,
C. B. Eom,
E. E. Hellstrom,
D. C. Larbalestier
Abstract:
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase d…
▽ More
An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* ~ 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.
△ Less
Submitted 28 April, 2001;
originally announced April 2001.
-
Thin Film Magnesium Boride Superconductor with Very High Critical Current Density and Enhanced Irreversibility Field
Authors:
C. B. Eom,
M. K. Lee,
J. H. Choi,
L. Belenky,
X. Song,
L. D. Cooley,
M. T. Naus,
S. Patnaik,
J. Jiang,
M. Rikel,
A. Polyanskii,
A. Gurevich,
X. Y. Cai,
S. D. Bu,
S. E. Babcock,
E. E. Hellstrom,
D. C. Larbalestier,
N. Rogado,
K. A. Regan,
M. A. Hayward,
T. He,
J. S. Slusky,
K. Inumaru,
M. K. Haas,
R. J. Cava
Abstract:
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superco…
▽ More
The discovery of superconductivity at 39 K in magnesium diboride offers the possibility of a new class of low-cost, high-performance superconducting materials for magnets and electronic applications. With twice the critical temperature of Nb_3Sn and four times that of Nb-Ti alloy, MgB_2 has the potential to reach much higher fields and current densities than either of these technological superconductors. A vital prerequisite, strongly linked current flow, has already been demonstrated even at this early stage. One possible drawback is the observation that the field at which superconductivity is destroyed is modest. Further, the field which limits the range of practical applications, the irreversibility field H*(T), is ~7 T at liquid helium temperature (4.2 K), significantly lower than ~10 T for Nb-Ti and ~20 T for Nb_3Sn. Here we show that MgB_2 thin films can exhibit a much steeper temperature dependence of H*(T) than is observed in bulk materials, yielding H*(4.2 K) above 14 T. In addition, very high critical current densities at 4.2 K, 1 MA/cm_2 at 1 T and 10_5 A/cm_2 at 10 T, are possible. These data demonstrate that MgB_2 has credible potential for high-field superconducting applications.
△ Less
Submitted 20 March, 2001;
originally announced March 2001.
