Showing 1–48 of 48 results for author: Choi, H J

Parameter-free analytic continuation for quantum many-body calculations

Authors: Mancheon Han, Hyoung Joon Choi

Abstract: We develop a reliable parameter-free analytic continuation method for quantum many-body calculations. Our method is based on a kernel grid, a causal spline, a regularization using the second-derivative roughness penalty, and the L-curve criterion. We also develop the L-curve averaged deviation to estimate the precision of our analytic continuation. To deal with statistically obtained data more eff… ▽ More We develop a reliable parameter-free analytic continuation method for quantum many-body calculations. Our method is based on a kernel grid, a causal spline, a regularization using the second-derivative roughness penalty, and the L-curve criterion. We also develop the L-curve averaged deviation to estimate the precision of our analytic continuation. To deal with statistically obtained data more efficiently, we further develop a bootstrap-averaged analytic continuation method. In the test using the exact imaginary-frequency Green's function with added statistical error, our method produces the spectral function that converges systematically to the exact one as the statistical error decreases. As an application, we simulate the two-orbital Hubbard model for various electron numbers with the dynamical-mean field theory in the imaginary time and obtain the real-frequency self-energy with our analytic continuation method, clearly identifying a non-Fermi liquid behavior as the electron number approaches the half filling from the quarter filling. Our analytic continuation can be used widely and it will facilitate drawing clear conclusions from imaginary-time quantum many-body calculations. △ Less

Submitted 31 December, 2022; originally announced January 2023.

Comments: 9 pages, 12 figures

Journal ref: Physical Review B 106, 245150 (2022)

Quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric few-layer and bulk $γ$-GeSe

Authors: Han-gyu Kim, Hyoung Joon Choi

Abstract: Group-IV monochalcogenides have attracted much attention due to their potential of ferroelectric and multiferroic properties. Recently, centrosymmetric gamma-phase GeSe in a double-layer honeycomb lattice has been theoretically predicted, but the synthesized gamma-phase GeSe showed a noncentrosymmetric atomic structure, leading to the possibility of ferroelectricity and spin-splitting. Here, we st… ▽ More Group-IV monochalcogenides have attracted much attention due to their potential of ferroelectric and multiferroic properties. Recently, centrosymmetric gamma-phase GeSe in a double-layer honeycomb lattice has been theoretically predicted, but the synthesized gamma-phase GeSe showed a noncentrosymmetric atomic structure, leading to the possibility of ferroelectricity and spin-splitting. Here, we study the quasiparticle band structures, spontaneous polarization, and spin-splitting in noncentrosymmetric gamma-GeSe using density functional theory and GW calculations. Our results show that noncentrosymmetric few-layer and bulk gamma-GeSe have semiconducting band structures with indirect band gaps, which depend almost linearly on the reciprocal of the number of layers. Spontaneous polarization occurs due to a small charge transfer between the layers, which increases with compressive strain, and ferroelectric switching can be achieved by an interlayer translation with a small energy barrier. Spin-splitting is found to be more significant at the highest valence band than at the lowest conduction band. Our results provide insights into the fundamental electronic properties of a layered ferroelectric semiconductor applicable to devices with ferroelectric/nonferroelectric junctions. △ Less

Submitted 7 September, 2021; originally announced September 2021.

Comments: 9 pages, 8 figures, 2 tables

Journal ref: Journal of Materials Chemistry C 9, 9683 (2021)

Causal optimization method for imaginary-time Green's functions in interacting electron systems

Authors: Mancheon Han, Hyoung Joon Choi

Abstract: We develop a causal optimization method that ensures causality in numerical calculations of Green's functions in interacting electron systems. Our method removes noncausality of numerical data by finding causal functions closest to the data. By testing our method with an exactly calculable model and applying it to practical dynamical mean-field calculations, we find that intermediate-frequency beh… ▽ More We develop a causal optimization method that ensures causality in numerical calculations of Green's functions in interacting electron systems. Our method removes noncausality of numerical data by finding causal functions closest to the data. By testing our method with an exactly calculable model and applying it to practical dynamical mean-field calculations, we find that intermediate-frequency behaviors of Green's functions are determined solely by causality, and noncausal statistical errors are removed very efficiently. Furthermore, we demonstrate that numerical calculations of the physical branch of the Luttinger-Ward functional can be stabilized by ensuring causality of the noninteracting Green's function. Our method and findings provide a basis for improving stability and efficiency of numerical simulations of quantum many-body systems. △ Less

Submitted 3 September, 2021; originally announced September 2021.

Comments: 9 pages, 8 figures

Journal ref: Physical Review B 104, 115112 (2021)

Anisotropic Pseudospin Tunneling in Two-Dimensional Black Phosphorus Junctions

Authors: Young Woo Choi, Hyoung Joon Choi

Abstract: We investigate the role of pseudospin structure of few-layer black phosphorus (BP) in interband tunneling properties in lateral BP junctions. We find that interband tunneling is critically dependent on junction directions because of the anisotropic pseudospin structure of BP. When the armchair direction of BP is normal to the interface, pseudospins of incident and transmitted carriers are nearly a… ▽ More We investigate the role of pseudospin structure of few-layer black phosphorus (BP) in interband tunneling properties in lateral BP junctions. We find that interband tunneling is critically dependent on junction directions because of the anisotropic pseudospin structure of BP. When the armchair direction of BP is normal to the interface, pseudospins of incident and transmitted carriers are nearly aligned so that interband tunneling is highly effective, analogous to the Klein tunneling in graphene. However, when the zigzag direction is normal to the interface, interband tunneling is suppressed by misaligned pseudospins. We also study junctions of band-gap inverted BP where the electronic structure is characterized by two Dirac cones. In this case, intervalley tunneling is prohibited either by momentum conservation or by pseudospin mismatch while intravalley tunneling is Klein-like irrespective of the junction direction. These results provide a foundation for develo** high-performance devices from BP and other pseudospin materials. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Comments: 6 pages, 4 figures

Journal ref: 2D Materials 8, 035024 (2021)

Quasiparticle band structures of bulk and few-layer PdSe2 from first-principles GW calculations

Authors: Han-gyu Kim, Hyoung Joon Choi

Abstract: We performed first-principles density functional theory (DFT) and GW calculations to investigate electronic structures of bulk and few-layer PdSe2. We obtained the quasiparticle band structure of bulk PdSe2, and the obtained energy gap agrees excellently with the reported experimental value. For monolayer and bilayer PdSe2, we obtained quasiparticle band structures with respect to the vacuum level… ▽ More We performed first-principles density functional theory (DFT) and GW calculations to investigate electronic structures of bulk and few-layer PdSe2. We obtained the quasiparticle band structure of bulk PdSe2, and the obtained energy gap agrees excellently with the reported experimental value. For monolayer and bilayer PdSe2, we obtained quasiparticle band structures with respect to the vacuum level. We analyzed DFT and GW band structures in detail, finding k-space positions of valence band maxima and conduction band minima, effective masses, the quasiparticle density of states, work functions, ionization potentials, electron affinities, and k-space shapes of electron and hole pockets. These results provide a foundation for development of basic studies and device applications. △ Less

Submitted 1 September, 2021; originally announced September 2021.

Comments: 7 pages and 6 figures

Journal ref: Physical Review B 103, 165419 (2021)

γ-GeSe:a new hexagonal polymorph from group IV-VI monochalcogenides

Authors: Sol Lee, Joong-Eon Jung, Han-gyu Kim, Yang** Lee, Je Myoung Park, Jeongsu Jang, Sangho Yoon, Arnab Ghosh, Minseol Kim, Joonho Kim, Woongki Na, Jonghwan Kim, Hyoung Joon Choi, Hyeonsik Cheong, Kwanpyo Kim

Abstract: The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so… ▽ More The family of group IV-VI monochalcogenides has an atomically puckered layered structure, and their atomic bond configuration suggests the possibility for the realization of various polymorphs. Here, we report the synthesis of the first hexagonal polymorph from the family of group IV-VI monochalcogenides, which is conventionally orthorhombic. Recently predicted four-atomic-thick hexagonal GeSe, so-called γ-GeSe, is synthesized and clearly identified by complementary structural characterizations, including elemental analysis, electron diffraction, high-resolution transmission electron microscopy imaging, and polarized Raman spectroscopy. The electrical and optical measurements indicate that synthesized γ-GeSe exhibits high electrical conductivity of 3x10^5 S/m, which is comparable to those of other two-dimensional layered semimetallic crystals. Moreover, γ-GeSe can be directly grown on h-BN substrates, demonstrating a bottom-up approach for constructing vertical van der Waals heterostructures incorporating γ-GeSe. The newly identified crystal symmetry of γ-GeSe warrants further studies on various physical properties of γ-GeSe. △ Less

Submitted 11 May, 2021; originally announced May 2021.

Comments: 24 pages, 5 figures

Journal ref: Nano Letters, 2021

Single-Crystalline Metallic Films Induced by van der Waals Epitaxy on Black Phosphorus

Authors: Yang** Lee, Han-gyu Kim, Tae Keun Yun, Jong Chan Kim, Sol Lee, Sung ** Yang, Myeong** Jang, Donggyu Kim, Huije Ryu, Gwan-Hyoung Lee, Seongil Im, Hu Young Jeong, Hyoung Joon Choi, Kwanpyo Kim

Abstract: The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) semiconducting crystal, possesses the puckered atomic structure with high chemical reactivity, and the establishment of a realistic atomic-scale pictur… ▽ More The properties of metal-semiconductor junctions are often unpredictable because of non-ideal interfacial structures, such as interfacial defects or chemical reactions introduced at junctions. Black phosphorus (BP), an elemental two-dimensional (2D) semiconducting crystal, possesses the puckered atomic structure with high chemical reactivity, and the establishment of a realistic atomic-scale picture of BP's interface toward metallic contact has remained elusive. Here we examine the interfacial structures and properties of physically-deposited metals of various kinds on BP. We find that Au, Ag, and Bi form single-crystalline films with (110) orientation through guided van der Waals epitaxy. Transmission electron microscopy and X-ray photoelectron spectroscopy confirm that atomically sharp van der Waals metal-BP interfaces forms with exceptional rotational alignment. Under a weak metal-BP interaction regime, the BP's puckered structure play an essential role in the adatom assembly process and can lead to the formation of a single crystal, which is supported by our theoretical analysis and calculations. The experimental survey also demonstrates that the BP-metal junctions can exhibit various types of interfacial structures depending on metals, such as the formation of polycrystalline microstructure or metal phosphides. This study provides a guideline for obtaining a realistic view on metal-2D semiconductor interfacial structures, especially for atomically puckered 2D crystals. △ Less

Submitted 3 May, 2021; originally announced May 2021.

Comments: 27 pages, 5 figures

Journal ref: Chemistry of Materials, 2021

Dichotomy of Electron-Phonon Coupling in Graphene Moiré Flat Bands

Authors: Young Woo Choi, Hyoung Joon Choi

Abstract: Graphene moire superlattices are outstanding platforms to study correlated electron physics and superconductivity with exceptional tunability. However, robust superconductivity has been measured only in magic-angle twisted bilayer graphene (MA-TBG) and magic-angle twisted trilayer graphene (MA-TTG). The absence of a superconducting phase in certain moire flat bands raises a question on the superco… ▽ More Graphene moire superlattices are outstanding platforms to study correlated electron physics and superconductivity with exceptional tunability. However, robust superconductivity has been measured only in magic-angle twisted bilayer graphene (MA-TBG) and magic-angle twisted trilayer graphene (MA-TTG). The absence of a superconducting phase in certain moire flat bands raises a question on the superconducting mechanism. In this work, we investigate electronic structure and electron-phonon coupling in graphene moire superlattices based on atomistic calculations. We show that electron-phonon coupling strength lambda is dramatically different among graphene moire flat bands. The total strength lambda is very large (lambda>1) for MA-TBG and MA-TTG, both of which display robust superconductivity in experiments. However, lambda is an order of magnitude smaller in twisted double bilayer graphene (TDBG) and twisted monolayer-bilayer graphene (TMBG) where superconductivity is reportedly rather weak or absent. We find that the Bernal-stacked layers in TDBG and TMBG induce sublattice polarization in the flat-band states, suppressing intersublattice electron-phonon matrix elements. We also obtain the nonadiabatic superconducting Tc that matches well with the experimental results. Our results clearly show a correlation between strong electron-phonon coupling and experimental observations of robust superconductivity. △ Less

Submitted 2 October, 2021; v1 submitted 30 March, 2021; originally announced March 2021.

Comments: 6 pages for the main text (including 4 figures and 1 table) and 3 pages for Supplemental Material

Thickness dependence of work function, ionization energy, and electron affinity of Mo and W dichalcogenides from DFT and GW calculations

Authors: Han-gyu Kim, Hyoung Joon Choi

Abstract: Transition-metal dichalcogenides (TMDs) are promising for two-dimensional (2D) semiconducting devices and novel phenomena. For 2D applications, their work function, ionization energy, and electron affinity are required as a function of thickness, but research on this is yet to cover the full family of compounds. Here, we present the work function, ionization energy, and electron affinity of few-la… ▽ More Transition-metal dichalcogenides (TMDs) are promising for two-dimensional (2D) semiconducting devices and novel phenomena. For 2D applications, their work function, ionization energy, and electron affinity are required as a function of thickness, but research on this is yet to cover the full family of compounds. Here, we present the work function, ionization energy, and electron affinity of few-layer and bulk MX2 (M = Mo, W and X = S, Se, Te) in 2H phase obtained accurately by the density functional theory and GW calculations. For each compound, we consider one-, two-, three-, four-layer, and bulk geometry. In GW calculations, accurate results are obtained by nonuniform q sampling for two-dimensional geometry. From band energies including the GW self-energy correction, we estimate the work function, band gap, ionization energy, and electron affinity as functions of the number of layers. We compare our results with available theoretical and experimental reports, and we discuss types of band alignments in in-plane and out-of-plane junctions of these few-layer and bulk TMDs. △ Less

Submitted 14 March, 2021; originally announced March 2021.

Comments: 10 pages, 5 figures, 7 tables

Journal ref: Physical Review B 103, 085404 (2021)

Stability, efficiency, and mechanism of n-type do** by hydrogen adatoms in two-dimensional transition metal dichalcogenides

Authors: Sehoon Oh, June Yeong Lim, Seongil Im, Hyoung Joon Choi

Abstract: Mono- and few-layer transition-metal dichalcogenides (TMDCs) provide opportunities for ideal two-dimensional semiconductors for electronic and optoelectronic devices. For electronic devices on TMDCs, it is essential to incorporate n- and/or p-type dopants which are stable in positions after patterned do**. Here we investigate hydrogen do** for TMDC (MX2 with M = Mo, W and X = S, Se, Te) nanosh… ▽ More Mono- and few-layer transition-metal dichalcogenides (TMDCs) provide opportunities for ideal two-dimensional semiconductors for electronic and optoelectronic devices. For electronic devices on TMDCs, it is essential to incorporate n- and/or p-type dopants which are stable in positions after patterned do**. Here we investigate hydrogen do** for TMDC (MX2 with M = Mo, W and X = S, Se, Te) nanosheets by first-principles calculations to address diffusion and do** properties. We find that adsorbed hydrogen atoms in TMDCs are energetically most stable at the interstitial site right on the Mo or W plane and have substantial energy barriers against diffusion that increase in the order of sulfides, selenides, and tellurides. Located at the most stable interstitial site on the Mo or W plane, the hydrogen atoms produce electrons in the conduction bands in the extremely high rate of one electron per hydrogen atom, without any defect state inside the band gap remarkably. We analyze the chemical bonding character around the dopant and the mechanism for such high efficiency of electron do**. We also consider properties of hydrogen molecules and Te vacancies for comparison. Our work shows that hydrogen do** is the promising pathway to development of highly integrated electronic devices on TMDCs △ Less

Submitted 12 August, 2019; originally announced August 2019.

Comments: 10 pages, 8 figures, 4 tables

Journal ref: Physical Review B 100, 085416 (2019)

Intrinsic Band Gap and Electrically Tunable Flat Bands in Twisted Double Bilayer Graphene

Authors: Young Woo Choi, Hyoung Joon Choi

Abstract: We present atomistic calculations on structural and electronic properties of twisted double bilayer graphene (TDBG) consisting of two sets of rotationally misaligned Bernal-stacked bilayer graphene. Obtained equilibrium atomic structures exhibit in-plane strains and the modulation of the interlayer distances at the rotationally mismatched interface layers. We find that the electronic structure of… ▽ More We present atomistic calculations on structural and electronic properties of twisted double bilayer graphene (TDBG) consisting of two sets of rotationally misaligned Bernal-stacked bilayer graphene. Obtained equilibrium atomic structures exhibit in-plane strains and the modulation of the interlayer distances at the rotationally mismatched interface layers. We find that the electronic structure of TDBG can have an intrinsic band gap at the charge neutral point for a large range of the twist angle theta. Near theta = 1.25 degree, the intrinsic band gap disappears and TDBG hosts flat bands at the Fermi level that are energetically well separated from higher and lower energy bands. We also show that the flat bands are easily tunable by applying vertical electric fields, and extremely narrow bandwidths less than 10 meV can be achieved for the electron-side flat bands in a wide range of the twist angle. Our results serve as a theoretical guide for exploring emergent correlated electron physics in this versatile moire superlattice system. △ Less

Submitted 3 March, 2019; originally announced March 2019.

Comments: 7 pages including Supplemental Material. 4 figures in the main text and 3 figures in Supplemental Material

Journal ref: Phys. Rev. B 100, 201402 (2019)

Role of electric fields on enhanced electron correlation in surface-doped FeSe

Authors: Young Woo Choi, Hyoung Joon Choi

Abstract: Electron-doped high-Tc FeSe reportedly has a strong electron correlation that is enhanced with do**. It has been noticed that significant electric fields exist inevitably between FeSe and external donors along with electron transfer. However, the effects of such fields on electron correlation are yet to be explored. Here we study potassium- (K-) dosed FeSe layers using density-functional theory… ▽ More Electron-doped high-Tc FeSe reportedly has a strong electron correlation that is enhanced with do**. It has been noticed that significant electric fields exist inevitably between FeSe and external donors along with electron transfer. However, the effects of such fields on electron correlation are yet to be explored. Here we study potassium- (K-) dosed FeSe layers using density-functional theory combined with dynamical mean-field theory to investigate the roles of such electric fields on the strength of the electron correlation. We find, very interestingly, the electronic potential-energy difference between the topmost Se and Fe atomic layers, generated by local electric fields of ionized K atoms, weakens the Se-mediated hop** between Fe d orbitals. Since it is the dominant hop** channel in FeSe, its reduction narrows the Fe d bands near the Fermi level, enhancing the electron correlation. This effect is orbital dependent and occurs in the topmost FeSe layer only. We also find the K dosing may increase the Se height, enhancing the electron correlation further. These results shed new light on the comprehensive study of high-Tc FeSe and other low-dimensional systems. △ Less

Submitted 13 January, 2019; originally announced January 2019.

Comments: 9 pages including Supplemental Material. 5 figures in the main text and 4 figures in Supplemental Material

Journal ref: Phys. Rev. Lett. 122, 046401 (2019)

Antiferromagnet-based spintronic functionality by controlling isospin domains in a layered perovskite iridate

Authors: Nara Lee, Eunjung Ko, Hwan Young Choi, Yun Jeong Hong, Muhammad Nauman, Woun Kang, Hyoung Joon Choi, Young Jai Choi, Younjung Jo

Abstract: The novel electronic state of the canted antiferromagnetic (AFM) insulator, strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining unique characteristics of the isospin state in Sr2IrO4. Bas… ▽ More The novel electronic state of the canted antiferromagnetic (AFM) insulator, strontium iridate (Sr2IrO4) has been well described by the spin-orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining unique characteristics of the isospin state in Sr2IrO4. Based on magnetic and transport measurements, large and highly anisotropic magnetoresistance (AMR) is obtained by manipulating the antiferromagnetic isospin domains. First-principles calculations suggest that electrons whose isospin directions are strongly coupled to in-plane net magnetic moment encounter the isospin mismatch when moving across antiferromagnetic domain boundaries, which generates a high resistance state. By rotating a magnetic field that aligns in-plane net moments and removes domain boundaries, the macroscopically-ordered isospins govern dynamic transport through the system, which leads to the extremely angle-sensitive AMR. As with this work that establishes a link between isospins and magnetotransport in strongly spin-orbit-coupled AFM Sr2IrO4, the peculiar AMR effect provides a beneficial foundation for fundamental and applied research on AFM spintronics. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: Advanced Materials, online published (2018)

Journal ref: Advanced Materials 30, 1805564 (2018)

Strong electron-phonon coupling, electron-hole asymmetry, and nonadiabaticity in magic-angle twisted bilayer graphene

Authors: Young Woo Choi, Hyoung Joon Choi

Abstract: We report strong electron-phonon coupling in magic-angle twisted bilayer graphene (MA-TBG) obtained from atomistic description of the system including more than 10000 atoms in the moire supercell. Electronic structure, phonon spectrum, and electron-phonon coupling strength lambda are obtained before and after atomic-position relaxation both in and out of plane. Obtained lambda is very large for MA… ▽ More We report strong electron-phonon coupling in magic-angle twisted bilayer graphene (MA-TBG) obtained from atomistic description of the system including more than 10000 atoms in the moire supercell. Electronic structure, phonon spectrum, and electron-phonon coupling strength lambda are obtained before and after atomic-position relaxation both in and out of plane. Obtained lambda is very large for MA-TBG, with lambda > 1 near the half-filling energies of the flat bands, while it is small (lambda ~ 0.1) for monolayer and unrotated bilayer graphene. Significant electron-hole asymmetry occurs in the electronic structure after atomic-structure relaxation, so lambda is much stronger with hole do** than electron do**. Obtained electron-phonon coupling is nearly isotropic and depends very weakly on electronic band and momentum, indicating that electron-phonon coupling prefers single-gap s-wave superconductivity. Relevant phonon energies are much larger than electron energy scale, going far beyond adiabatic limit. Our results provide a fundamental understanding of the electron-phonon interaction in MA-TBG, highlighting that it can contribute to rich physics of the system. △ Less

Submitted 26 December, 2018; v1 submitted 22 September, 2018; originally announced September 2018.

Comments: 7 pages including supplemental material, 3 figures in main text, 1 figure in supplemental material

Journal ref: Phys. Rev. B 98, 241412 (2018)

Two-Dimensional Dirac Fermions Protected by Space-Time Inversion Symmetry in Black Phosphorus

Authors: Jimin Kim, Seung Su Baik, Sung Won Jung, Yeongsup Sohn, Sae Hee Ryu, Hyoung Joon Choi, Bohm-Jung Yang, Keun Su Kim

Abstract: We report the realization of novel symmetry-protected Dirac fermions in a surface-doped two-dimensional (2D) semiconductor, black phosphorus. The widely tunable band gap of black phosphorus by the surface Stark effect is employed to achieve a surprisingly large band inversion up to ~0.6 eV. High-resolution angle-resolved photoemission spectra directly reveal the pair creation of Dirac points and t… ▽ More We report the realization of novel symmetry-protected Dirac fermions in a surface-doped two-dimensional (2D) semiconductor, black phosphorus. The widely tunable band gap of black phosphorus by the surface Stark effect is employed to achieve a surprisingly large band inversion up to ~0.6 eV. High-resolution angle-resolved photoemission spectra directly reveal the pair creation of Dirac points and their moving along the axis of the glide-mirror symmetry. Unlike graphene, the Dirac point of black phosphorus is stable, as protected by spacetime inversion symmetry, even in the presence of spin-orbit coupling. Our results establish black phosphorus in the inverted regime as a simple model system of 2D symmetry-protected (topological) Dirac semimetals, offering an unprecedented opportunity for the discovery of 2D Weyl semimetals. △ Less

Submitted 30 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Lett. 119, 226801 (2017)

Switching Magnetism and Superconductivity with Spin-Polarized Current in Iron-Based Superconductor

Authors: Seokhwan Choi, Hyoung Joon Choi, Jong Mok Ok, Yeonghoon Lee, Won-Jun Jang, Alex Taekyung Lee, Young Kuk, SungBin Lee, Andreas J. Heinrich, Sang-Wook Cheong, Yunkyu Bang, Steven Johnston, Jun Sung Kim, Jhinhwan Lee

Abstract: We have explored a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single crystal Sr$_2$VO$_3$FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a non-trivial $C_4$ (2$\times$2) order, not achievable by thermal exci… ▽ More We have explored a new mechanism for switching magnetism and superconductivity in a magnetically frustrated iron-based superconductor using spin-polarized scanning tunneling microscopy (SPSTM). Our SPSTM study on single crystal Sr$_2$VO$_3$FeAs shows that a spin-polarized tunneling current can switch the Fe-layer magnetism into a non-trivial $C_4$ (2$\times$2) order, not achievable by thermal excitation with unpolarized current. Our tunneling spectroscopy study shows that the induced $C_4$ (2$\times$2) order has characteristics of plaquette antiferromagnetic order in Fe layer and strongly suppressed superconductivity. Also, thermal agitation beyond the bulk Fe spin ordering temperature erases the $C_4$ state. These results suggest a new possibility of switching local superconductivity by changing the symmetry of magnetic order with spin-polarized and unpolarized tunneling currents in iron-based superconductors. △ Less

Submitted 14 September, 2017; v1 submitted 4 July, 2017; originally announced July 2017.

Comments: 33 pages, 16 figures

Journal ref: Phys. Rev. Lett. 119, 227001 (2017)

Dirac-semimetal phase diagram of two-dimensional black phosphorus

Authors: Hyeon** Doh, Hyoung Joon Choi

Abstract: Black phosphorus (BP), a layered van der Waals material, reportedly has a band gap sensitive to external perturbations and manifests a Dirac-semimetal phase when its band gap is closed. Previous studies were focused on effects of each perturbation, lacking a unified picture for the band-gap closing and the Dirac-semimetal phase. Here, using pseudospins from the glide-reflection symmetry, we study… ▽ More Black phosphorus (BP), a layered van der Waals material, reportedly has a band gap sensitive to external perturbations and manifests a Dirac-semimetal phase when its band gap is closed. Previous studies were focused on effects of each perturbation, lacking a unified picture for the band-gap closing and the Dirac-semimetal phase. Here, using pseudospins from the glide-reflection symmetry, we study the electronic structures of mono- and bilayer BP and construct the phase diagram of the Dirac-semimetal phase in the parameter space related to pressure, strain, and electric field. We find that the Dirac-semimetal phase in BP layers is singly connected in the phase diagram, indicating the phase is topologically identical regardless of the gap-closing mechanism. Our findings can be generalized to the Dirac semimetal phase in anisotropic layered materials and can play a guiding role in search for a new class of topological materials and devices. △ Less

Submitted 24 November, 2016; v1 submitted 14 June, 2016; originally announced June 2016.

Comments: 5 pages, 4 figures+Supplemental Material. The title and the main text have been revised extensively and the supplemental material added

Journal ref: 2D Mater. 4 (2017) 025071

Observation of tunable bandgap and anisotropic Dirac semimetal state in black phosphorus

Authors: Jimin Kim, Seung Su Baik, Sae Hee Ryu, Yeongsup Sohn, Soohyung Park, Byeong-Gyu Park, Jonathan Denlinger, Yeon** Yi, Hyoung Joon Choi, Keun Su Kim

Abstract: Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface do** technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulate… ▽ More Black phosphorus consists of stacked layers of phosphorene, a two-dimensional semiconductor with promising device characteristics. We report the realization of a widely tunable bandgap in few-layer black phosphorus doped with potassium using an in-situ surface do** technique. Through band-structure measurements and calculations, we demonstrate that a vertical electric field from dopants modulates the bandgap owing to the giant Stark effect and tunes the material from a moderate-gap semiconductor to a band-inverted semimetal. At the critical field of this band inversion, the material becomes a Dirac semimetal with anisotropic dispersion, linear in armchair and quadratic in zigzag directions. The tunable band structure of black phosphorus may allow great flexibility in design and optimization of electronic and optoelectronic devices. △ Less

Submitted 22 August, 2015; originally announced August 2015.

Journal ref: Science 349, 723-726 (2015)

Emergence of Two-Dimensional Massless Dirac Fermions, Chiral Pseudospins, and Berry's Phase in Potassium Doped Few-Layer Black Phosphorus

Authors: Seung Su Baik, Keun Su Kim, Yeon** Yi, Hyoung Joon Choi

Abstract: Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) do** on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a qu… ▽ More Thin flakes of black phosphorus (BP) are a two-dimensional (2D) semiconductor whose energy gap is predicted being sensitive to the number of layers and external perturbations. Very recently, it was found that a simple method of potassium (K) do** on the surface of BP closes its band gap completely, producing a Dirac semimetal state with a linear band dispersion in the armchair direction and a quadratic one in the zigzag direction. Here, based on first-principles density functional calculations, we predict that, beyond the critical K density of the gap closure, 2D massless Dirac Fermions (i.e., Dirac cones) emerge in K-doped few-layer BP, with linear band dispersions in all momentum directions, and the electronic states around Dirac points have chiral pseudospins and Berry's phase. These features are robust with respect to the spin-orbit interaction and may lead to graphene-like electronic transport properties with greater flexibility for potential device applications. △ Less

Submitted 7 December, 2015; v1 submitted 20 August, 2015; originally announced August 2015.

Journal ref: Nano Letters 15, 7788 (2015)

Direct momentum-resolved observation of one-dimensional confinement of externally doped electrons within a single subnanometre-scale wire

Authors: Inkyung Song, Dong-Hwa Oh, Ha-Chul Shin, Sung-Joon Ahn, Youngkwon Moon, Sun-Hee Woo, Hyoung Joon Choi, Chong-Yun Park, Joung Real Ahn

Abstract: Cutting-edge research in the band engineering of nanowires at the ultimate fine scale is related to the minimum scale of a nanowire-based device. The fundamental issue at the subnanometre scale is whether angle-resolved photoemission spectroscopy (ARPES) can be used to directly measure the momentum-resolved electronic structure of a single wire because of the difficulty associated with assembling… ▽ More Cutting-edge research in the band engineering of nanowires at the ultimate fine scale is related to the minimum scale of a nanowire-based device. The fundamental issue at the subnanometre scale is whether angle-resolved photoemission spectroscopy (ARPES) can be used to directly measure the momentum-resolved electronic structure of a single wire because of the difficulty associated with assembling single wire into an ordered array for such measurements. Here, we demonstrated that the one-dimensional (1D) confinement of electrons, which are transferred from external dopants, within a single subnanometre-scale wire (subnanowire) could be directly measured using ARPES. Convincing evidence of 1D electron confinement was obtained using two different gold subnanowires with characteristic single metallic bands that were alternately and spontaneously ordered on a stepped silicon template, Si(553). Noble metal atoms were adsorbed at room temperature onto the gold subnanowires while maintaining the overall structure of the wires. Only one type of gold subnanowires could be controlled using external noble metal dopants without transforming the metallic band of the other type of gold subnanowires. This result was confirmed by scanning tunnelling microscopy experiments and first-principles calculations. The selective control clearly showed that externally doped electrons could be confined within a single gold subnanowire. This experimental evidence was used to further investigate the effects of the disorder induced by external dopants on a single subnanowire using ARPES. △ Less

Submitted 28 January, 2015; originally announced January 2015.

Comments: 20 pages, 5 figures

Journal ref: Nano Letters 2015, 15, 281-288

Dipole-containing encapsulation on WSe2/MoS2 nanoflake p-n diode with glass substrate toward an ideal performance

Authors: Pyo ** Jeon, Sung-Wook Min, ** Sung Kim, Syed Raza Ali Raza, Kyung Hee Choi, Hee Sung Lee, Young Tack Lee, Do Kyung Hwang, Hyoung Joon Choi, Seongil Im

Abstract: We report on p-WSe2/n-MoS2 heterojunction diodes fabricated both on glass and SiO2/p+-Si substrates. The electrostatic performance and stability of our diode were successfully improved toward ideal current-voltage (I-V) behavior by adopting the fluoropolymer CYTOP encapsulation layer on top of our diode; reduction of reverse-bias leakage current and enhancement of forward-bias on current were achi… ▽ More We report on p-WSe2/n-MoS2 heterojunction diodes fabricated both on glass and SiO2/p+-Si substrates. The electrostatic performance and stability of our diode were successfully improved toward ideal current-voltage (I-V) behavior by adopting the fluoropolymer CYTOP encapsulation layer on top of our diode; reduction of reverse-bias leakage current and enhancement of forward-bias on current were achieved along with good aging stability in air ambient. Such performance improvement is attributed to the intrinsic properties of CYTOP materials with C-F bonds whose strong dipole moment causes hole accumulation, while the strong hydrophobicity of CYTOP would prevent ambient molecule adsorption on 2D semiconductor surface. Moreover, fabricated on glass, our p-n diode displayed good dynamic rectification at over 100 Hz, without displacement current-induced signal overshoot/undershoot which was shown in the other diode on SiO2/p+-Si. Little I-V hysteresis in our diode is another benefit of glass substrate. We conclude that our CYTOP-encapsulated WSe2/MoS2 p-n diode on glass is a high performance and ambient stable 2D nanodevice toward future advanced electronics. △ Less

Submitted 23 December, 2014; originally announced December 2014.

Analytic approach to the edge state of the Kane-Mele Model

Authors: Hyeon** Doh, Gun Sang Jeon, Hyoung Joon Choi

Abstract: We investigate the edge state of a two-dimensional topological insulator based on the Kane-Mele model. Using complex wave numbers of the Bloch wave function, we derive an analytical expression for the edge state localized near the edge of a semi-infinite honeycomb lattice with a straight edge. For the comparison of the edge type effects, two types of the edges are considered in this calculation; o… ▽ More We investigate the edge state of a two-dimensional topological insulator based on the Kane-Mele model. Using complex wave numbers of the Bloch wave function, we derive an analytical expression for the edge state localized near the edge of a semi-infinite honeycomb lattice with a straight edge. For the comparison of the edge type effects, two types of the edges are considered in this calculation; one is a zigzag edge and the other is an armchair edge. The complex wave numbers and the boundary condition give the analytic equations for the energies and the wave functions of the edge states. The numerical solutions of the equations reveal the intriguing spatial behaviors of the edge state. We define an edge-state width for analyzing the spatial variation of the edge-state wave function. Our results show that the edge-state width can be easily controlled by a couple of parameters such as the spin-orbit coupling and the sublattice potential. The parameter dependences of the edge-state width show substantial differences depending on the edge types. These demonstrate that, even if the edge states are protected by the topological property of the bulk, their detailed properties are still discriminated by their edges. This edge dependence can be crucial in manufacturing small-sized devices since the length scale of the edge state is highly subject to the edges. △ Less

Submitted 19 August, 2014; originally announced August 2014.

Comments: 10 pages, 7 figures, submitted to PRB

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Authors: Hee Sung Lee, Seung Su Baik, Sung-Wook Min, Pyo ** Jeon, ** Sung Kim, Kyu** Choi, Sunmin Ryu, Hyoung Joon Choi, Jae Hoon Kim, Seongil Im

Abstract: Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISF… ▽ More Molybdenum disulfide (MoS2) nanosheet, one of two dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors including graphene. However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal-insulator-semiconductor field effect transistors (MISFETs), where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) with NiOx Schottky electrode, where the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by on-state gate field. Our MESFETs with single-, double-, and triple-layered MoS2 respectively demonstrate high mobilities of 6000, 3500, and 2800 cm2/Vs at a certain low threshold voltage of -1 ~ -2 V. The thickness-dependent mobility difference in MESFETs was theoretically explained with electron scattering reduction mechanisms. △ Less

Submitted 26 June, 2014; originally announced June 2014.

Comments: 27 pages, 3 figures, Supplementary Materials

Quantitative Current-Voltage Characteristics in Molecular Junctions from First Principles

Authors: Pierre Darancet, Jonathan R. Widawsky, Hyoung Joon Choi, Latha Venkataraman, Jeffrey B. Neaton

Abstract: Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, im… ▽ More Using self-energy-corrected density functional theory (DFT) and a coherent scattering-state approach, we explain current-voltage (IV) measurements of four pyridine-Au and amine-Au linked molecular junctions with quantitative accuracy. Parameter-free many-electron self-energy corrections to DFT Kohn-Sham eigenvalues are demonstrated to lead to excellent agreement with experiments at finite bias, improving upon order-of-magnitude errors in currents obtained with standard DFT approaches. We further propose an approximate route for prediction of quantitative IV characteristics for both symmetric and asymmetric molecular junctions based on linear response theory and knowledge of the Stark shifts of junction resonance energies. Our work demonstrates that a quantitative, computationally inexpensive description of coherent transport in molecular junctions is readily achievable, enabling new understanding and control of charge transport properties of molecular-scale interfaces at large bias voltages. △ Less

Submitted 30 November, 2012; originally announced December 2012.

Comments: 6 pages, 3 figures

Journal ref: Nanoletters 2012

Role of d orbitals in the Rashba-type spin splitting for noble-metal surfaces

Authors: Hyungjun Lee, Hyoung Joon Choi

Abstract: We investigate the Rashba-type spin splitting in the Shockley surface states on Au(111) and Ag(111) surfaces, based on first-principles calculations. By turning on and off spin-orbit interaction (SOI) partly, we show that although the surface states are mainly of p-orbital character with only small d-orbital one, d-channel SOI determines the splitting and the spin direction while p-channel SOI has… ▽ More We investigate the Rashba-type spin splitting in the Shockley surface states on Au(111) and Ag(111) surfaces, based on first-principles calculations. By turning on and off spin-orbit interaction (SOI) partly, we show that although the surface states are mainly of p-orbital character with only small d-orbital one, d-channel SOI determines the splitting and the spin direction while p-channel SOI has minor and negative effects. The small d-orbital character of the surface states, present even without SOI, varies linearly with the crystal momentum k, resulting in the linear k dependence of the splitting, the Hallmark of the Rashba type. As a way to perturb the d-orbital character of the surface states, we discuss effects of electron and hole do** to the Au(111) surface. △ Less

Submitted 9 July, 2012; originally announced July 2012.

Comments: 7 pages, 4 figures

Journal ref: Physical Review B 86, 045437 (2012)

Brief review on iron-based superconductors: are there clues for unconventional superconductivity?

Authors: Hyungju Oh, Jisoo Moon, Donghan Shin, Chang-Youn Moon, Hyoung Joon Choi

Abstract: Study of superconductivity in layered iron-based materials was initiated in 2006 by Hosono's group, and boosted in 2008 by the superconducting transition temperature, Tc, of 26 K in LaFeAsO1-xFx. Since then, enormous researches have been done on the materials, with Tc reaching as high as 55 K. Here, we review briefly experimental and theoretical results on atomic and electronic structures and magn… ▽ More Study of superconductivity in layered iron-based materials was initiated in 2006 by Hosono's group, and boosted in 2008 by the superconducting transition temperature, Tc, of 26 K in LaFeAsO1-xFx. Since then, enormous researches have been done on the materials, with Tc reaching as high as 55 K. Here, we review briefly experimental and theoretical results on atomic and electronic structures and magnetic and superconducting properties of FeAs-based superconductors and related compounds. We seek for clues for unconventional superconductivity in the materials. △ Less

Submitted 31 December, 2011; originally announced January 2012.

Comments: Review paper, 20 pages, 22 figures

Journal ref: Progress in Superconductivity 13, 65-84 (2011)

Graphyne: Hexagonal network of carbon with versatile Dirac cones

Authors: Bog G. Kim, Hyoung Joon Choi

Abstract: We study alpha, beta, and gamma graphyne, a class of graphene allotropes with carbon triple bonds, using a first-principles density-functional method and tight-binding calculation. We find that graphyne has versatile Dirac cones and it is due to remarkable roles of the carbon triple bonds in electronic and atomic structures. The carbon triple bonds modulate effective hop** matrix elements and re… ▽ More We study alpha, beta, and gamma graphyne, a class of graphene allotropes with carbon triple bonds, using a first-principles density-functional method and tight-binding calculation. We find that graphyne has versatile Dirac cones and it is due to remarkable roles of the carbon triple bonds in electronic and atomic structures. The carbon triple bonds modulate effective hop** matrix elements and reverse their signs, resulting in Dirac cones with reversed chirality in alpha graphyne, momentum shift of the Dirac point in beta graphyne, and switch of the energy gap in gamma graphyne. Furthermore, the triple bonds provide chemisorption sites of adatoms which can break sublattice symmetry while preserving planar sp2-bonding networks. These features of graphyne open new possibilities for electronic applications of carbon-based two-dimensional materials and derived nanostructures. △ Less

Submitted 9 March, 2013; v1 submitted 13 December, 2011; originally announced December 2011.

Comments: 5 pages, 5 figures, 1 table

Journal ref: Physical Review B 86, 115435 (2012)

Chiral orbital-angular-momentum in the surface states of Bi2Se3

Authors: Seung Ryong Park, **hee Han, Chul Kim, Yoon Young Koh, Changyoung Kim, Hyungjun Lee, Hyoung Joon Choi, Jung Hoon Han, Kyung Dong Lee, Nam Jung Hur, Masashi Arita, Kenya Shimada, Hirofumi Namatame, Masaki Taniguchi

Abstract: Locking of the spin of a quasi-particle to its momentum in split bands of on the surfaces of metals and topological insulators (TIs) is understood in terms of Rashba effect where a free electron in the surface states feels an effective magnetic field. On the other hand, the orbital part of the angular momentum (OAM) is usually neglected. We performed angle resolved photoemission experiments with c… ▽ More Locking of the spin of a quasi-particle to its momentum in split bands of on the surfaces of metals and topological insulators (TIs) is understood in terms of Rashba effect where a free electron in the surface states feels an effective magnetic field. On the other hand, the orbital part of the angular momentum (OAM) is usually neglected. We performed angle resolved photoemission experiments with circularly polarized lights and first principles density functional calculation with spin-orbit coupling on a TI, Bi2Se3, to study the local OAM of the surface states. We show from the results that OAM in the surface states of Bi2Se3 is significant and locked to the electron momentum in opposite direction to the spin, forming chiral OAM states. Our finding opens a new possibility to have strong light-induced spin-polarized current in the surface states. △ Less

Submitted 11 October, 2011; v1 submitted 3 March, 2011; originally announced March 2011.

Comments: 5 pages, 4 figures, 1 table

Journal ref: Phys. Rev. Lett. 108, 046805 (2012)

Low-velocity anisotropic Dirac fermions on the side surface of topological insulators

Authors: Chang-Youn Moon, **hee Han, Hyungjun Lee, Hyoung Joon Choi

Abstract: We report anisotropic Dirac-cone surface bands on a side-surface geometry of the topological insulator Bi$_2$Se$_3$ revealed by first-principles density-functional calculations. We find that the electron velocity in the side-surface Dirac cone is anisotropically reduced from that in the (111)-surface Dirac cone, and the velocity is not in parallel with the wave vector {\bf k} except for {\bf k} in… ▽ More We report anisotropic Dirac-cone surface bands on a side-surface geometry of the topological insulator Bi$_2$Se$_3$ revealed by first-principles density-functional calculations. We find that the electron velocity in the side-surface Dirac cone is anisotropically reduced from that in the (111)-surface Dirac cone, and the velocity is not in parallel with the wave vector {\bf k} except for {\bf k} in high-symmetry directions. The size of the electron spin depends on the direction of {\bf k} due to anisotropic variation of the noncollinearity of the electron state. Low-energy effective Hamiltonian is proposed for side-surface Dirac fermions, and its implications are presented including refractive transport phenomena occurring at the edges of tological insulators where different surfaces meet. △ Less

Submitted 10 January, 2011; v1 submitted 31 December, 2010; originally announced January 2011.

Comments: 4 pages, 2 columns, 4 figures

Journal ref: Phys. Rev. B 84, 195425 (2011)

Density functional study of orbital-selective magnetism in FeAs-based superconductors

Authors: Hyungju Oh, Donghan Shin, Hyoung Joon Choi

Abstract: We performed spin-polarized density functional calculations of lanthanide-series (Ln) iron oxypnictides LnFeAsO (Ln=La, Ce, Pr, Nd, Sm, and Gd) with constrained Fe magnetic moments, finding that in-plane dxy and out-of-plane dyz orbital characters are preferred for small Fe magnetic moments. Comparison of LnFeAsO compounds shows that the antiferromagnetism (AFM) from the Fe dxy orbital is itineran… ▽ More We performed spin-polarized density functional calculations of lanthanide-series (Ln) iron oxypnictides LnFeAsO (Ln=La, Ce, Pr, Nd, Sm, and Gd) with constrained Fe magnetic moments, finding that in-plane dxy and out-of-plane dyz orbital characters are preferred for small Fe magnetic moments. Comparison of LnFeAsO compounds shows that the antiferromagnetism (AFM) from the Fe dxy orbital is itinerantly driven by orbital-dependent Fermi-surface nesting while AFM from the Fe dyz orbital is driven by superexchange mechanism. The Fe magnetic moments of the two orbital characters show different coupling strengths to Fermi-surface electrons orbital-selectively, suggesting that they may play different roles in superconductivity and in AFM, and making d orbital characters of the magnetic moment resolvable by measuring the electronic structures. △ Less

Submitted 25 December, 2013; v1 submitted 10 December, 2010; originally announced December 2010.

Comments: 6 pages, 4 figures

Electronic Structure Studies of Detwinned BaFe$_2$As$_2$ by Photoemission

Authors: Y. K. Kim, Hyungju Oh, Chul Kim, D. J. Song, W. S. Jung, B. Y. Kim, Hyoung Joon Choi, C. Kim, B. S. Lee, S. H. Khim, K. H. Kim, J. B. Hong, Y. S. Kwon

Abstract: We performed angle resolved photoelectron spectroscopy (ARPES) studies on mechanically detwinned BaFe2As2. We observe clear band dispersions and the shapes and characters of the Fermi surfaces are identified. Shapes of the two hole pockets around the Γ-point are found to be consistent with the Fermi surface topology predicted in the orbital ordered states. Dirac-cone like band dispersions near the… ▽ More We performed angle resolved photoelectron spectroscopy (ARPES) studies on mechanically detwinned BaFe2As2. We observe clear band dispersions and the shapes and characters of the Fermi surfaces are identified. Shapes of the two hole pockets around the Γ-point are found to be consistent with the Fermi surface topology predicted in the orbital ordered states. Dirac-cone like band dispersions near the Γ-point are clearly identified as theoretically predicted. At the X-point, split bands remain intact in spite of detwinning, barring twinning origin of the bands. The observed band dispersions are compared with calculated band structures. With a magnetic moment of 0.2 ?B per iron atom, there is a good agreement between the calculation and experiment. △ Less

Submitted 11 January, 2011; v1 submitted 4 November, 2010; originally announced November 2010.

Comments: Accepted for publication in Physical Review B

Effects of spin-orbit interaction on magnetic and electronic structures in antiferromagnetic LaFeAsO

Authors: Sehoon Oh, Jung-Hoon Lee, Hyun Myung Jang, Hyoung Joon Choi

Abstract: Magnetic and electronic structures in LaFeAsO in the single-stripe-type antiferromagnetic (AFM) phase are studied using first-principles density-functional calculations including the spin-orbit interaction. We show that the longitudinal ordering (LO) where Fe magnetic moments are parallel or anti-parallel with the in-plane AFM ordering vector is lower in energy than transverse orderings (TOs), in… ▽ More Magnetic and electronic structures in LaFeAsO in the single-stripe-type antiferromagnetic (AFM) phase are studied using first-principles density-functional calculations including the spin-orbit interaction. We show that the longitudinal ordering (LO) where Fe magnetic moments are parallel or anti-parallel with the in-plane AFM ordering vector is lower in energy than transverse orderings (TOs), in good agreement with neutron diffraction experiments. Calculated energy difference between LO and TOs is about 0.1 meV per Fe atom, indicating that LO will prevail at temperature below about 1 K. We also show that the spin-orbit interaction splits degenerate bands at some high-symmetry points in the Brillouin zone by about 60 meV, depending on spatial directions of the Fe magnetic moments. △ Less

Submitted 26 December, 2016; v1 submitted 5 August, 2010; originally announced August 2010.

Comments: 5 pages, 5 figures, 2 tables

Fermi surfaces and quantum oscillations in underdoped high-Tc superconductors YBa2Cu3O6.5 and YBa2Cu4O8

Authors: Hyungju Oh, Hyoung Joon Choi, Steven G. Louie, Marvin L. Cohen

Abstract: We study underdoped high-Tc superconductors YBa2Cu3O6.5 and YBa2Cu4O8 using first-principles pseudopotential methods with additional Coulomb interactions at the Cu atoms, and obtain Fermi-surface pocket areas in close agreement with measured Shubnikov-de Haas and de Haas-van Alphen oscillations. With antiferromagnetic order in CuO2 planes, stable in the calculations, small hole pockets are forme… ▽ More We study underdoped high-Tc superconductors YBa2Cu3O6.5 and YBa2Cu4O8 using first-principles pseudopotential methods with additional Coulomb interactions at the Cu atoms, and obtain Fermi-surface pocket areas in close agreement with measured Shubnikov-de Haas and de Haas-van Alphen oscillations. With antiferromagnetic order in CuO2 planes, stable in the calculations, small hole pockets are formed near the so-called Fermi-arc positions in the Brillouin zone which reproduce the low-frequency oscillations. A large electron pocket, necessary for the negative Hall coefficient, is also formed in YBa2Cu3O6.5, giving rise to the high-frequency oscillations as well. Effective masses and specific heats are also calculated and compared with measurements. Our results highlight the important role of magnetic order in the electronic structure of underdoped high-Tc superconductors. △ Less

Submitted 12 December, 2009; originally announced December 2009.

Journal ref: Physical Review B 84, 014518 (2011)

Minimal Single-Particle Hamiltonian for Charge Carriers in Epitaxial Graphene on 4H-SiC(0001)

Authors: Seungchul Kim, Jisoon Ihm, Hyoung Joon Choi, Young-Woo Son

Abstract: We present a minimal but crucial microscopic theory for epitaxial graphene and graphene nanoribbons on the 4H-SiC(0001) surface -- protopypical materials to explore physical properties of graphene in large scale. Coarse-grained model Hamiltonians are constructed based on the atomic and electronic structures of the systems from first-principles calculations. From the theory, we unambiguously unco… ▽ More We present a minimal but crucial microscopic theory for epitaxial graphene and graphene nanoribbons on the 4H-SiC(0001) surface -- protopypical materials to explore physical properties of graphene in large scale. Coarse-grained model Hamiltonians are constructed based on the atomic and electronic structures of the systems from first-principles calculations. From the theory, we unambiguously uncover origins of several intriguing experimental observations such as broken-symmetry states around the Dirac points and new energy bands arising throughout the Brillouin zone, thereby establishing the role of substates in modifying electronic properties of graphene. We also predict that armchair graphene nanoribbons on the surface have a single energy gap of 0.2 eV when their widths are over 15 nm, in sharp contrast to their usual family behavior. △ Less

Submitted 7 December, 2009; originally announced December 2009.

Chalcogen-height dependent magnetic interactions and magnetic order switching in FeSe$_x$Te$_{1-x}$

Authors: Chang-Youn Moon, Hyoung Joon Choi

Abstract: Magnetic properties of iron chalcogenide superconducting materials are investigated using density functional calculations. We find the stability of magnetic phases is very sensitive to the height of chalcogen species from the Fe plane: while FeTe with optimized Te height has the double-stripe-type $(π,0)$ magnetic ordering, the single-stripe-type $(π,π)$ ordering becomes the ground state phase w… ▽ More Magnetic properties of iron chalcogenide superconducting materials are investigated using density functional calculations. We find the stability of magnetic phases is very sensitive to the height of chalcogen species from the Fe plane: while FeTe with optimized Te height has the double-stripe-type $(π,0)$ magnetic ordering, the single-stripe-type $(π,π)$ ordering becomes the ground state phase when Te height is lowered below a critical value by, e.g., Se do**. This behavior is understood by opposite Te-height dependences of the superexchange interaction and a longer-range magnetic interaction mediated by itinerant electrons. We also demonstrate a linear temperature dependence of the macroscopic magnetic susceptibility in the single-stripe phase in contrast to a constant behavior in the double-stripe phase. Our findings provide a comprehensive and unified view to understand the magnetism in FeSe$_x$Te$_{1-x}$ and iron pnictide superconductors. △ Less

Submitted 16 September, 2009; originally announced September 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 104, 057003 (2010).

Prediction of superconducting properties of CaB2 using anisotropic Eliashberg theory

Authors: Hyoung Joon Choi, Steven G. Louie, Marvin L. Cohen

Abstract: Superconducting properties of hypothetical simple hexagonal CaB2 are studied using the fully anisotropic Eliashberg formalism based on electronic and phononic structures and electron-phonon interactions which are obtained from ab initio pseudopotential density functional calculations. The superconducting transition temperature Tc, the superconducting energy gap Delta(k) on the Fermi surface, and… ▽ More Superconducting properties of hypothetical simple hexagonal CaB2 are studied using the fully anisotropic Eliashberg formalism based on electronic and phononic structures and electron-phonon interactions which are obtained from ab initio pseudopotential density functional calculations. The superconducting transition temperature Tc, the superconducting energy gap Delta(k) on the Fermi surface, and the specific heat are obtained and compared with corresponding properties of MgB2. Our results suggest that CaB2 will have a higher Tc and a stronger two-gap nature, with a larger Delta(k) in the sigma bands but a smaller Delta(k) in the pi bands than MgB2. △ Less

Submitted 15 June, 2009; originally announced June 2009.

Comments: 5 pages, 4 figures

Journal ref: Physical Review B 80, 064503 (2009)

High resolution angle resolved photoemission studies on quasi-particle dynamics in graphite

Authors: C. S. Leem, B. J. Kim, Chul Kim, S. R. Park, Min-Kook Kim, S. Johnston, T. Ohta, A. Bostwick, Hyoung Joon Choi, T. Devereaux, E. Rotenberg, C. Kim

Abstract: We obtained the spectral function of the graphite H point using high resolution angle resolved photoelectron spectroscopy (ARPES). The extracted width of the spectral function (inverse of the photo-hole lifetime) near the H point is approximately proportional to the energy as expected from the linearly increasing density of states (DOS) near the Fermi energy. This is well accounted by our electr… ▽ More We obtained the spectral function of the graphite H point using high resolution angle resolved photoelectron spectroscopy (ARPES). The extracted width of the spectral function (inverse of the photo-hole lifetime) near the H point is approximately proportional to the energy as expected from the linearly increasing density of states (DOS) near the Fermi energy. This is well accounted by our electron-phonon coupling theory considering the peculiar electronic DOS near the Fermi level. And we also investigated the temperature dependence of the peak widths both experimentally and theoretically. The upper bound for the electron-phonon coupling parameter is ~0.23, nearly the same value as previously reported at the K point. Our analysis of temperature dependent ARPES data at K shows that the energy of phonon mode of graphite has much higher energy scale than 125K which is dominant in electron-phonon coupling. △ Less

Submitted 3 March, 2009; originally announced March 2009.

Comments: 9 pages, 8 figures, accepted for publication in Phys. Rev. B

Dominant role of local-moment interactions in the magnetism in iron pnictides : comparative study of arsenides and antimonides from first-principles

Authors: Chang-Youn Moon, Se Young Park, Hyoung Joon Choi

Abstract: The magnetic properties of various iron pnictides are investigated using first-principles pseudopotential calculations. We consider three different families, LaFePnO, BaFe$_2$Pn$_2$, and LiFePn with Pn=As and Sb, and find that the Fe local spin moment and the stability of the stripe-type antiferromagnetic phase increases from As to Sb for all of the three families, with a partial gap formed at t… ▽ More The magnetic properties of various iron pnictides are investigated using first-principles pseudopotential calculations. We consider three different families, LaFePnO, BaFe$_2$Pn$_2$, and LiFePn with Pn=As and Sb, and find that the Fe local spin moment and the stability of the stripe-type antiferromagnetic phase increases from As to Sb for all of the three families, with a partial gap formed at the Fermi energy. In the meanwhile, the Fermi-surface nesting is found to be enhanced from Pn=As to Sb for LaFePnO, but not for BaFe$_2$Pn$_2$ and LiFePn. These results indicate that it is not the Fermi surface nesting but the local moment interaction that determines the stability of the magnetic phase in these materials, and that the partial gap is an induced feature by a specific magnetic order. △ Less

Submitted 17 February, 2009; v1 submitted 13 February, 2009; originally announced February 2009.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 80, 054522 (2009).

Mechanically-Controlled Binary Conductance Switching of a Single-Molecule Junction

Authors: Su Ying Quek, Maria Kamenetska, Michael L. Steigerwald, Hyoung Joon Choi, Steven G. Louie, Mark S. Hybertsen, J. B. Neaton, L. Venkataraman

Abstract: Molecular-scale components are expected to be central to nanoscale electronic devices. While molecular-scale switching has been reported in atomic quantum point contacts, single-molecule junctions provide the additional flexibility of tuning the on/off conductance states through molecular design. Thus far, switching in single-molecule junctions has been attributed to changes in the conformation… ▽ More Molecular-scale components are expected to be central to nanoscale electronic devices. While molecular-scale switching has been reported in atomic quantum point contacts, single-molecule junctions provide the additional flexibility of tuning the on/off conductance states through molecular design. Thus far, switching in single-molecule junctions has been attributed to changes in the conformation or charge state of the molecule. Here, we demonstrate reversible binary switching in a single-molecule junction by mechanical control of the metal-molecule contact geometry. We show that 4,4'-bipyridine-gold single-molecule junctions can be reversibly switched between two conductance states through repeated junction elongation and compression. Using first-principles calculations, we attribute the different measured conductance states to distinct contact geometries at the flexible but stable N-Au bond: conductance is low when the N-Au bond is perpendicular to the conducting pi-system, and high otherwise. This switching mechanism, inherent to the pyridine-gold link, could form the basis of a new class of mechanically-activated single-molecule switches. △ Less

Submitted 8 January, 2009; originally announced January 2009.

Enhanced spin density wave in LaOFeSb

Authors: Chang-Youn Moon, Se Young Park, Hyoung Joon Choi

Abstract: We predict atomic, electronic, and magnetic structures of a hypothetical compound LaOFeSb by first-principles density-functional calculations. It is shown that LaOFeSb prefers a stripe-type antiferromagnetic phase (i.e., spin density wave (SDW) phase) to the non-magnetic (NM) phase, with a larger Fe spin moment and greater SDW-NM energy difference than those of LaOFeAs. The SDW phase is found to… ▽ More We predict atomic, electronic, and magnetic structures of a hypothetical compound LaOFeSb by first-principles density-functional calculations. It is shown that LaOFeSb prefers a stripe-type antiferromagnetic phase (i.e., spin density wave (SDW) phase) to the non-magnetic (NM) phase, with a larger Fe spin moment and greater SDW-NM energy difference than those of LaOFeAs. The SDW phase is found to favor the orthorhombic structure while the tetragonal structure is more stable in the NM phase. In the NM-phase LaOFeSb, the electronic bandwidth near the Fermi energy is reduced compared with LaOFeAs, indicating smaller orbital overlap between Fe $d$ states and subsequently enhanced intra-atomic exchange coupling. The calculated Fermi surface in the NM phase consists of three hole and two electron sheets, and shows increased nesting between two hole and two electron sheets compared with LaOFeAs. Monotonous changes found in our calculated material properties of LaOFePn (Pn=P, As, and Sb), along with reported superconducting properties of doped LaOFeP and LaOFeAs, suggest that doped LaOFeSb may have a higher superconducting transition temperature. △ Less

Submitted 9 August, 2008; originally announced August 2008.

Comments: 5 pages with 3 figures and 1 table, double column

Journal ref: Phys. Rev. B 78, 212507 (2008).

Origins of anomalous electronic structures of epitaxial graphene on silicon carbide

Authors: Seungchul Kim, Jisoon Ihm, Hyoung Joon Choi, Young-Woo Son

Abstract: On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasi-periodic $6\times 6$ domain pattern emerges out of a larger commensurate $6\sqrt{3}\times6\sqrt{3}R30^\circ$ pe… ▽ More On the basis of first-principles calculations, we report that a novel interfacial atomic structure occurs between graphene and the surface of silicon carbide, destroying the Dirac point of graphene and opening a substantial energy gap there. In the calculated atomic structures, a quasi-periodic $6\times 6$ domain pattern emerges out of a larger commensurate $6\sqrt{3}\times6\sqrt{3}R30^\circ$ periodic interfacial reconstruction, resolving a long standing experimental controversy on the periodicity of the interfacial superstructures. Our theoretical energy spectrum shows a gap and midgap states at the Dirac point of graphene, which are in excellent agreement with the recently-observed anomalous angle-resolved photoemission spectra. Beyond solving unexplained issues of epitaxial graphene, our atomistic study may provide a way to engineer the energy gaps of graphene on substrates. △ Less

Submitted 29 April, 2008; v1 submitted 18 December, 2007; originally announced December 2007.

Comments: Additional references added; published version; 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 100, 176802 (2008)

Effect of linear density of states on the quasi-particle dynamics and small electron-phonon coupling in graphite

Authors: C. S. Leem, B. J. Kim, Chul Kim, S. R. Park, T. Ohta, A. Bostwick, E. Rotenberg, H. -D. Kim, M. K. Kim, H. J. Choi, C. Kim

Abstract: We obtained the spectral function of very high quality natural graphite single crystals using angle resolved photoelectron spectroscopy (ARPES). A clear separation of non-bonding and bonding bands and asymmetric lineshape are observed. The asymmetric lineshapes are well accounted for by the finite photoelectron escape depth and the band structure. The extracted width of the spectral function (in… ▽ More We obtained the spectral function of very high quality natural graphite single crystals using angle resolved photoelectron spectroscopy (ARPES). A clear separation of non-bonding and bonding bands and asymmetric lineshape are observed. The asymmetric lineshapes are well accounted for by the finite photoelectron escape depth and the band structure. The extracted width of the spectral function (inverse of the photohole life time) near the K point is, beyond the maximum phonon energy, approximately proportional to the energy as expected from the linear density of states near the Fermi energy. The upper bound for the electron-phonon coupling constant is about 0.2, a much smaller value than the previously reported one. △ Less

Submitted 25 August, 2007; originally announced August 2007.

Comments: 7 pages, 7 figures

Amine-Gold Linked Single-Molecule Junctions: Experiment and Theory

Authors: Su Ying Quek, Latha Venkataraman, Hyoung Joon Choi, Steven G. Louie, Mark S. Hybertsen, J. B. Neaton

Abstract: The measured conductance distribution for single molecule benzenediamine-gold junctions, based on 59,000 individual conductance traces recorded while breaking a gold point contact in solution, has a clear peak at 0.0064 G$_{0}$ with a width of $\pm$ 40%. Conductance calculations based on density functional theory (DFT) for 15 distinct junction geometries show a similar spread. Differences in loc… ▽ More The measured conductance distribution for single molecule benzenediamine-gold junctions, based on 59,000 individual conductance traces recorded while breaking a gold point contact in solution, has a clear peak at 0.0064 G$_{0}$ with a width of $\pm$ 40%. Conductance calculations based on density functional theory (DFT) for 15 distinct junction geometries show a similar spread. Differences in local structure have a limited influence on conductance because the amine-Au bonding motif is well-defined and flexible. The average calculated conductance (0.046 G$_{0}$) is seven times larger than experiment, suggesting the importance of many-electron corrections beyond DFT. △ Less

Submitted 16 July, 2007; originally announced July 2007.

Electrical Switching in Metallic Carbon Nanotubes

Authors: Young-Woo Son, Jisoon Ihm, Marvin L. Cohen, Steven G. Louie, Hyoung Joon Choi

Abstract: We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than two orders of magnitude with experimentally attainable electric fields. This novel property h… ▽ More We present first-principles calculations of quantum transport which show that the resistance of metallic carbon nanotubes can be changed dramatically with homogeneous transverse electric fields if the nanotubes have impurities or defects. The change of the resistance is predicted to range over more than two orders of magnitude with experimentally attainable electric fields. This novel property has its origin that backscattering of conduction electrons by impurities or defects in the nanotubes is strongly dependent on the strength and/or direction of the applied electric fields. We expect this property to open a path to new device applications of metallic carbon nanotubes. △ Less

Submitted 17 November, 2005; originally announced November 2005.

Comments: 4 pages and 4 figures

Journal ref: Phys. Rev. Lett. 95, 216602 (2005)

Orientation-dependent C60 electronic structures revealed by photoemission

Authors: V. Brouet, W. L. Yang, X. J. Zhou, H. J. Choi, S. G. Louie, M. L. Cohen, A. Goldoni, F. Parmigiani, Z. Hussain, Z. X. Shen

Abstract: We observe, with angle-resolved photoemission, a dramatic change in the electronic structure of two C60 monolayers, deposited respectively on Ag (111) and (100) substrates, and similarly doped with potassium to half-filling of the C60 lowest unoccupied molecular orbital. The Fermi surface symmetry, the bandwidth, and the curvature of the dispersion at Gamma point are different. Orientations of t… ▽ More We observe, with angle-resolved photoemission, a dramatic change in the electronic structure of two C60 monolayers, deposited respectively on Ag (111) and (100) substrates, and similarly doped with potassium to half-filling of the C60 lowest unoccupied molecular orbital. The Fermi surface symmetry, the bandwidth, and the curvature of the dispersion at Gamma point are different. Orientations of the C60 molecules on the two substrates are known to be the main structural difference between the two monolayers, and we present new band-structure calculations for some of these orientations. We conclude that orientations play a key role in the electronic structure of fullerides. △ Less

Submitted 8 October, 2004; originally announced October 2004.

Comments: 4 pages, 4 figures

Reply to "Comment on `First-principles calculation of the superconducting transition in MgB2 within the anisotropic Eliashberg formalism'"

Authors: Hyoung Joon Choi, David Roundy, Hong Sun, Marvin L. Cohen, Steven G. Louie

Abstract: The recent preprint by Mazin et al. [cond-mat/0212417] contains many inappropriate evaluations and/or criticisms on our published work [Phys. Rev. B 66, 020513 (2002) and Nature 418, 758 (2002)]. The preprint [cond-mat/0212417v1] was submitted to Physical Review B as a comment on one of our papers [Phys. Rev. B 66, 020513 (2002)]. In the reviewing process, Mazin et al. have withdrawn many of the… ▽ More The recent preprint by Mazin et al. [cond-mat/0212417] contains many inappropriate evaluations and/or criticisms on our published work [Phys. Rev. B 66, 020513 (2002) and Nature 418, 758 (2002)]. The preprint [cond-mat/0212417v1] was submitted to Physical Review B as a comment on one of our papers [Phys. Rev. B 66, 020513 (2002)]. In the reviewing process, Mazin et al. have withdrawn many of the statements contained in cond-mat/0212417v1, however two claims remain in their revised manuscript [cond-mat/0212417v3]: (1) the calculated variations of the superconducting energy gap within the sigma- or the pi-bands are not observable in real samples due to scatterings, and (2) the Coulomb repulsion mu(k,k') is negligibly small between sigma- and pi-states and thus should be approximated by a diagonal 2 x 2 matrix in the sigma and pi channels. Here, we point out that the former does not affect the validity of our theoretical work which is for the clean limit, and that the latter is not correct. △ Less

Submitted 1 July, 2003; originally announced July 2003.

Superconducting energy gaps, low temperature specific heat, and quasiparticle spectra of MgB2

Authors: Hyoung Joon Choi, David Roundy, Hong Sun, Marvin L. Cohen, Steven G. Louie

Abstract: We report first-principles calculations of the k- and T-dependent superconducting gap Delta(k,T) in MgB2 and its manifestation in various measured quantities. Because the Fermi surface has disconnected sheets with different electron-phonon coupling strengths, our calculations show that near T=0, the values of Delta(k) cluster into two groups: large values (about 6.5 to 7.5 meV) on the strongly c… ▽ More We report first-principles calculations of the k- and T-dependent superconducting gap Delta(k,T) in MgB2 and its manifestation in various measured quantities. Because the Fermi surface has disconnected sheets with different electron-phonon coupling strengths, our calculations show that near T=0, the values of Delta(k) cluster into two groups: large values (about 6.5 to 7.5 meV) on the strongly coupled sheets and small values (about 1 to 3 meV) on the weakly coupled sheets. The calculated gap, quasiparticle density of states, and specific heat and their temperature dependences are in agreement with the recent measurements which conclude that MgB2 is a multiple gap superconductor. In fact, theory predicts four prominent values for the gap at low T. △ Less

Submitted 9 November, 2001; originally announced November 2001.

Comments: 13 pages, 4 figures

First-Principles Calculation of the Superconducting Transition in MgB2 within the Anisotropic Eliashberg Formalism

Authors: Hyoung Joon Choi, David Roundy, Hong Sun, Marvin L. Cohen, Steven G. Louie

Abstract: We present a study of the superconducting transition in MgB2 using the ab-initio pseudopotential density functional method and the fully anisotropic Eliashberg equation. Our study shows that the anisotropic Eliashberg equation, constructed with ab-initio calculated momentum-dependent electron-phonon interaction and anharmonic phonon frequencies, yields an average electron-phonon coupling constan… ▽ More We present a study of the superconducting transition in MgB2 using the ab-initio pseudopotential density functional method and the fully anisotropic Eliashberg equation. Our study shows that the anisotropic Eliashberg equation, constructed with ab-initio calculated momentum-dependent electron-phonon interaction and anharmonic phonon frequencies, yields an average electron-phonon coupling constant lambda = 0.61, a transition temperature Tc = 39 K, and a boron isotope-effect exponent alphaB = 0.31 with a reasonable assumption of mu* = 0.12. The calculated values for Tc, lambda, and alphaB are in excellent agreement with transport, specific heat, and isotope effect measurements respectively. The individual values of the electron-phonon coupling lambda(k,k') on the various pieces of the Fermi surface however vary from 0.1 to 2.5. The observed Tc is a result of both the raising effect of anisotropy in the electron-phonon couplings and the lowering effect of anharmonicity in the relevant phonon modes. △ Less

Submitted 9 November, 2001; originally announced November 2001.

Comments: 4 pages, 3 figures, 1 table

Journal ref: Phys.Rev.B66:020513,2002