Showing 1–26 of 26 results for author: Chisholm, M F

Strain-induced atomic-scale building blocks for ferromagnetism in epitaxial LaCoO3

Authors: Sangmoon Yoon, Xiang Gao, Jong Mok Ok, Zhaoliang Liao, Myung-Geun Han, Yimei Zhu, Panchapakesan Ganesh, Matthew F. Chisholm, Woo Seok Choi, Ho Nyung Lee

Abstract: The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain… ▽ More The origin of strain-induced ferromagnetism, which is robust regardless of the type and degree of strain in LaCoO3 (LCO) thin films, is enigmatic despite intensive research efforts over the past decade. Here, by combining scanning transmission electron microscopy with ab initio density functional theory plus U calculations, we report that the ferromagnetism does not emerge directly from the strain itself, but rather from the creation of compressed structural units within ferroelastically formed twin-wall domains. The compressed structural units are magnetically active with the rocksalt-type high-spin/low-spin order. Our study highlights that the ferroelastic nature of ferromagnetic structural units is important for understanding the intriguing ferromagnetic properties in LCO thin films. △ Less

Submitted 4 May, 2021; originally announced May 2021.

Twin-domain formation in epitaxial triangular lattice delafossites

Authors: Jong Mok Ok, Sangmoon Yoon, Andrew R. Lupini, Panchapakesan Ganesh, Amanda Huon, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO2, which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, the high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly… ▽ More Twin domains are often found as structural defects in symmetry mismatched epitaxial thin films. The delafossite ABO2, which has a rhombohedral structure, is a good example that often forms twin domains. Although bulk metallic delafossites are known to be the most conducting oxides, the high conductivity is yet to be realized in thin film forms. Suppressed conductivity found in thin films is mainly caused by the formation of twin domains, and their boundaries can be a source of scattering centers for charge carriers. To overcome this challenge, the underlying mechanism for their formation must be understood, so that such defects can be controlled and eliminated. Here, we report the origin of structural twins formed in a CuCrO2 delafossite thin film on a substrate with hexagonal or triangular symmetries. A robust heteroepitaxial relationship is found for the delafossite film with the substrate, and the surface termination turns out to be critical to determine and control the domain structure of epitaxial delafossites. Based on such discoveries, we also demonstrate a twin-free epitaxial thin films grown on high-miscut substrates. This finding provides an important synthesis strategy for growing single domain delafossite thin films and can be applied to other delafossites for epitaxial synthesis of high-quality thin films. △ Less

Submitted 4 May, 2021; originally announced May 2021.

Effective reduction of PdCoO2 thin films via hydrogenation and sign tunable anomalous Hall effect

Authors: Gaurab Rimal, Yiting Liu, Caleb Schmidt, Hussein Hijazi, Elizabeth Skoropata, Jason Lapano, Debangshu Mukherjee, Raymond R. Unocic, Matthew F. Chisholm, Yifei Sun, Haoming Yu, Cheng-Jun Sun, Hua Zhou, Matthew Brahlek, Leonard C. Feldman, Shriram Ramanathan, Seongshik Oh

Abstract: PdCoO2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals, and exhibits hydrodynamic electronic transport with extremely long mean free path at cryogenic temperatures. Nonetheless, it is nonmagnetic despite the presence of the cobalt ion. Here, we show that a mild hydrogenation p… ▽ More PdCoO2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals, and exhibits hydrodynamic electronic transport with extremely long mean free path at cryogenic temperatures. Nonetheless, it is nonmagnetic despite the presence of the cobalt ion. Here, we show that a mild hydrogenation process reduces PdCoO2 thin films to an atomically-mixed alloy of PdCo with strong out-of-plane ferromagnetism and sign-tunable anomalous Hall effect. Considering that many other compounds remain little affected under a similar hydrogenation condition, this discovery may provide a route to creating novel spintronic heterostructures combining strong ferromagnetism, involving oxides and other functional materials. △ Less

Submitted 27 April, 2021; originally announced April 2021.

Unusual Electrical Conductivity Driven by Localized Stoichiometry Modification at Vertical Epitaxial Interfaces

Authors: Wenrui Zhang, Shaobo Cheng, Christopher M Rouleau, Kyle P. Kelley, Jong Keum, Eli Stavitski, Yimei Zhu, Matthew F. Chisholm, Zheng Gai, Gyula Eres

Abstract: Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La1-xSrxMnO3 (LSMO) as a prototypical phase transition material and establish vertical epitaxial int… ▽ More Precise control of lattice mismatch accommodation and cation interdiffusion across the interface is critical to modulate correlated functionalities in epitaxial heterostructures, particularly when the interface composition is positioned near a compositional phase transition boundary. Here we select La1-xSrxMnO3 (LSMO) as a prototypical phase transition material and establish vertical epitaxial interfaces with NiO to explore the strong interplay between strain accommodation, stoichiometry modification, and localized electron transport across the interface. It is found that localized stoichiometry modification overcomes the plaguing dead layer problem in LSMO and leads to strongly directional conductivity, as manifested by more than three orders of magnitude difference between out-of-plane to in-plane conductivity. Comprehensive structural characterization and transport measurements reveal that this emerging behavior is related to a compositional change produced by directional cation diffusion that pushes the LSMO phase transition from insulating into metallic within an ultrathin interface region. This study explores the nature of unusual electric conductivity at vertical epitaxial interfaces and establishes an effective route for engineering nanoscale electron transport for oxide electronics. △ Less

Submitted 29 July, 2020; originally announced July 2020.

Journal ref: Mater. Horiz., 2020, 7, 3217-3225

Investigating phase transitions from local crystallographic analysis based on machine learning of atomic environments

Authors: Rama K. Vasudevan, Maxim Ziatdinov, Lukas Vlcek, Anna N. Morozovska, Eugene A. Eliseev, Shi-Ze Yang, Yongji Gong, Pulickel Ajayan, Wu Zhou, Matthew F. Chisholm, Sergei V. Kalinin

Abstract: Traditionally, phase transitions are explored using a combination of macroscopic functional characterization and scattering techniques, providing insight into average properties and symmetries of the lattice but local atomic level mechanisms during phase transitions generally remain unknown. Here we explore the mechanisms of a phase transition between the trigonal prismatic and distorted octahedra… ▽ More Traditionally, phase transitions are explored using a combination of macroscopic functional characterization and scattering techniques, providing insight into average properties and symmetries of the lattice but local atomic level mechanisms during phase transitions generally remain unknown. Here we explore the mechanisms of a phase transition between the trigonal prismatic and distorted octahedral phases of layered chalogenides in the MoS2 ReS2 system from the observations of local degrees of freedom, namely atomic positions by Scanning Transmission Electron Microscopy (STEM). We employ local crystallographic analysis based on machine learning of atomic environments to build a picture of the transition from the atomic level up and determine local and global variables controlling the local symmetry breaking. In particular, we argue that the dependence of the average symmetry breaking distortion amplitude on global and local concentration can be used to separate local chemical and global electronic effects on transition. This approach allows exploring atomic mechanisms beyond the traditional macroscopic descriptions, utilizing the imaging of compositional fluctuations in solids to explore phase transitions over a range of realized and observed local stoichiometries and atomic configurations. △ Less

Submitted 17 June, 2020; originally announced June 2020.

Comments: 5 figures, 20 pages including supplementary

Unraveling ferroelectric polarization and ionic contributions to electroresistance in epitaxial Hf0.5Zr0.5O2 tunnel junctions

Authors: Milena Cervo Sulzbach, Saúl Estandía, Xiao Long, Jike Lyu, Nico Dix, Jaume Gàzquez, Matthew F. Chisholm, Florencio Sánchez, Ignasi Fina, Josep Fontcuberta

Abstract: Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related… ▽ More Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed by a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. Here is shown the fundamental role of the microstructure of HZO films setting the balance between those contributions. The oxide film presents coherent or incoherent grain boundaries, associated to the existence of monoclinic and orthorhombic phases in HZO films, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to 450 %) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (1000-100000 %) electroresistance when both phases coexist. △ Less

Submitted 12 June, 2020; originally announced June 2020.

Journal ref: Adv. Electron. Mater. 2020, 6, 1900852

Domain Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

Authors: Saul Estandía, Nico Dix, Matthew F. Chisholm, Ignasi Fina, Florencio Sánchez

Abstract: Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototy** emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To g… ▽ More Epitaxial ferroelectric HfO2 films are the most suitable to investigate intrinsic properties of the material and for prototy** emerging devices. Ferroelectric Hf0.5Zr0.5O2(111) films have been epitaxially stabilized on La2/3Sr1/3MnO3(001) electrodes. This epitaxy, considering the symmetry dissimilarity and the huge lattice mismatch, is not compatible with conventional mechanisms of epitaxy. To gain insight into the epitaxy mechanism, scanning transmission electron microscopy characterization of the interface was performed, revealing arrays of dislocations with short periodicities. These observed periodicities agree with the expected for domain matching epitaxy, indicating that this unconventional mechanism could be the prevailing factor in the stabilization of ferroelectric Hf0.5Zr0.5O2 with (111) orientation in the epitaxial Hf0.5Zr0.5O2(111)/La2/3Sr1/3MnO3(001) heterostructure. △ Less

Submitted 4 June, 2020; originally announced June 2020.

Journal ref: Crystal Growth Design 20, 3801 (2020)

Rotational polarization nanotopologies in BaTiO3/SrTiO3 superlattices

Authors: Saul Estandia, Florencio Sanchez, Matthew F. Chisholm, Jaume Gazquez

Abstract: Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under proper electrostatic and elastic conditions. These polar states may possess emerging properties not present in the bulk compounds and are promising for technological applications. Here, the observation of rotational… ▽ More Ferroelectrics are characterized by domain structures as are other ferroics. At the nanoscale though, ferroelectrics may exhibit non-trivial or exotic polarization configurations under proper electrostatic and elastic conditions. These polar states may possess emerging properties not present in the bulk compounds and are promising for technological applications. Here, the observation of rotational polarization topologies at the nanoscale by means of aberration-corrected scanning transmission electron microscopy is reported in BaTiO3/SrTiO3 superlattices grown on cubic SrTiO3(001). The transition from a highly homogeneous polarization state to the formation of rotational nanodomains has been achieved by controlling the superlattice period while maintaining compressive clam** of the superlattice to the cubic SrTiO3 substrate. The nanodomains revealed in BaTiO3 prove that its nominal tetragonal structure also allows rotational polar textures. △ Less

Submitted 14 November, 2019; originally announced November 2019.

Comments: Published in Nanoscale. Open access

Journal ref: Nanoscale, 2019, 11, 21275

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Authors: Saul Estandia, Nico Dix, Jaume Gazquez, Ignasi Fina, Jike Lyu, Matthew F. Chisholm, Josep Fontcuberta, Florencio Sanchez

Abstract: The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, det… ▽ More The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic phase of hafnia is proved. Epitaxial bilayers of Hf0.5Zr0.5O2 and La0.67Sr0.33MnO3 electrodes were grown on a set of single crystalline oxide 001-oriented, cubic or pseudocubic setting, substrates with lattice parameter in the 3.71 - 4.21 A range. The lattice strain of the La0.67Sr0.33MnO3 electrode, determined by the lattice mismatch with the substrate, is critical in the stabilization of the orthorhombic phase of Hf0.5Zr0.5O2. On La0.67Sr0.33MnO3 electrodes tensile strained most of the Hf0.5Zr0.5O2 film is orthorhombic, whereas the monoclinic phase is favored when La0.67Sr0.33MnO3 is relaxed or compressively strained. Therefore, the Hf0.5Zr0.5O2 films on TbScO3 and GdScO3 substrates present substantially enhanced ferroelectric polarization in comparison to films on other substrates, including the commonly used SrTiO3. The capability of having epitaxial doped HfO2 films with controlled phase and polarization is of major interest for a better understanding of the ferroelectric properties and paves the way for fabrication of ferroelectric devices based on nanometric HfO2 films. △ Less

Submitted 4 September, 2019; originally announced September 2019.

Journal ref: ACS Applied Electronic Materials, 1, 1449 (2019)

Order and randomness in dopant distributions: exploring the thermodynamics of solid solutions from atomically resolved imaging

Authors: Lukas Vlcek, Shize Yang, Yongji Gong, Pulickel Ajayan, Wu Zhou, Matthew F. Chisholm, Maxim Ziatdinov, Rama K. Vasudevan, Sergei V. Kalinin

Abstract: Exploration of structure-property relationships as a function of dopant concentration is commonly based on mean field theories for solid solutions. However, such theories that work well for semiconductors tend to fail in materials with strong correlations, either in electronic behavior or chemical segregation. In these cases, the details of atomic arrangements are generally not explored and analyz… ▽ More Exploration of structure-property relationships as a function of dopant concentration is commonly based on mean field theories for solid solutions. However, such theories that work well for semiconductors tend to fail in materials with strong correlations, either in electronic behavior or chemical segregation. In these cases, the details of atomic arrangements are generally not explored and analyzed. The knowledge of the generative physics and chemistry of the material can obviate this problem, since defect configuration libraries as stochastic representation of atomic level structures can be generated, or parameters of mesoscopic thermodynamic models can be derived. To obtain such information for improved predictions, we use data from atomically resolved microscopic images that visualize complex structural correlations within the system and translate them into statistical mechanical models of structure formation. Given the significant uncertainties about the microscopic aspects of the material's processing history along with the limited number of available images, we combine model optimization techniques with the principles of statistical hypothesis testing. We demonstrate the approach on data from a series of atomically-resolved scanning transmission electron microscopy images of Mo$_x$Re$_{1-x}$S$_2$ at varying ratios of Mo/Re stoichiometries, for which we propose an effective interaction model that is then used to generate atomic configurations and make testable predictions at a range of concentrations and formation temperatures. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Comments: 26 pages, 8 figures

Nanoscale Interlayer Defects in Iron Arsenides

Authors: Qiang Zheng, Miaofang Chi, Maxim Ziatdinov, 2 Li Li, Petro Maksymovych, Matt F. Chisholm, 1 Sergei V. Kalinin, Athena S. Sefat

Abstract: Using a local real-space microscopy probe, we discover evidence of nanoscale interlayer defects along the c-crystallographic direction in BaFe2As2 (122) based iron-arsenide superconductors. We find ordered 122 atomic arrangements within the ab-plane, and within regions of ~10 to 20 nm size perpendicular to this plane. While the FeAs substructure is very rigid, Ba ions are relatively weakly bound a… ▽ More Using a local real-space microscopy probe, we discover evidence of nanoscale interlayer defects along the c-crystallographic direction in BaFe2As2 (122) based iron-arsenide superconductors. We find ordered 122 atomic arrangements within the ab-plane, and within regions of ~10 to 20 nm size perpendicular to this plane. While the FeAs substructure is very rigid, Ba ions are relatively weakly bound and can be displaced from the 122, forming stacking faults resulting in the physical separation of the 122 between adjacent ordered domains. The evidence for interlayer defects between the FeAs superconducting planes gives perspective on the minimal connection between interlayer chemical disorder and high-temperature superconductivity. In particular, the Cooper pairs may be finding a way around such localized interlayer defects through a percolative path of the ordered layered 122 lattice that may not affect Tc. △ Less

Submitted 10 July, 2019; v1 submitted 26 June, 2019; originally announced June 2019.

Journal ref: Journal of Solid State Chemistry 277 (2019), 422

Single Crystal High Entropy Perovskite Oxide Epitaxial Films

Authors: Yogesh Sharma, Brianna L. Musico, Xiang Gao, Chengyun Hua, Andrew F. May, Andreas Herklotz, Ankur Rastogi, David Mandrus, Jiaqiang Yan, Ho Nyung Lee, Matthew F. Chisholm, Veerle Keppens, T. Zac Ward

Abstract: The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent cr… ▽ More The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent crystallinity and atomically abrupt interfaces to the underlying substrates. Atomically-resolved electron energy loss spectroscopy map** shows a uniform and random distribution of all B-site cations. The ability to stabilize perovskites with this level of configurational disorder offers new possibilities for designing materials from a much broader combinatorial cation pallet while providing a fresh avenue for fundamental studies in strongly correlated quantum materials where local disorder can play a critical role in determining macroscopic properties. △ Less

Submitted 28 June, 2018; originally announced June 2018.

Journal ref: Physical Review Materials 2, 060404(R) (2018)

Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor FeSe/SrTiO$_3$

Authors: Hunter Sims, Donovan N. Leonard, Axiel Yaël Birenbaum, Zhuozhi Ge, Tom Berlijn, Lian Li, Valentino R. Cooper, Matthew F. Chisholm, Sokrates T. Pantelides

Abstract: The sensitive dependence of monolayer materials on their environment often gives rise to unexpected properties. It was recently demonstrated that monolayer FeSe on a SrTiO$_3$ substrate exhibits a much higher superconducting critical temperature T$_C$ than the bulk material. Here, we examine the interfacial structure of FeSe / SrTiO$_3$ and the effect of an interfacial Ti$_{1+x}$O$_2$ layer on the… ▽ More The sensitive dependence of monolayer materials on their environment often gives rise to unexpected properties. It was recently demonstrated that monolayer FeSe on a SrTiO$_3$ substrate exhibits a much higher superconducting critical temperature T$_C$ than the bulk material. Here, we examine the interfacial structure of FeSe / SrTiO$_3$ and the effect of an interfacial Ti$_{1+x}$O$_2$ layer on the increased T$_C$ using a combination of scanning transmission electron microscopy and density functional theory. We find Ti$_{1+x}$O$_2$ forms its own quasi-two-dimensional layer, bonding to both the substrate and the FeSe film by van der Waals interactions. The excess Ti in this layer electron-dopes the FeSe monolayer in agreement with experimental observations. Moreover, the interfacial layer introduces symmetry-breaking distortions in the FeSe film that favor a T$_C$ increase. These results suggest that this common substrate may be functionalized to modify the electronic structure of a variety of thin films and monolayers. △ Less

Submitted 8 May, 2018; originally announced May 2018.

Comments: 10 pages, 4 figures, supplemental materials available upon request

Journal ref: Phys. Rev. B 100, 144103 (2019)

Quantum Critical Behavior in the Asymptotic Limit of High Disorder: Entropy Stabilized NiCoCr0.8 Alloys

Authors: Brian C. Sales, Ke **, Hongbin Bei, John Nichols, Matthew F. Chisholm, Andrew F. May, Nicholas P. Butch, Andrew D. Christianson, Michael A. McGuire

Abstract: The behavior of matter near a quantum critical point (QCP) is one of the most exciting and challenging areas of physics research. Emergent phenomena such as high-temperature superconductivity are linked to the proximity to a QCP. Although significant progress has been made in understanding quantum critical behavior in some low dimensional magnetic insulators, the situation in metallic systems is m… ▽ More The behavior of matter near a quantum critical point (QCP) is one of the most exciting and challenging areas of physics research. Emergent phenomena such as high-temperature superconductivity are linked to the proximity to a QCP. Although significant progress has been made in understanding quantum critical behavior in some low dimensional magnetic insulators, the situation in metallic systems is much less clear. Here we demonstrate that NiCoCrx single crystal alloys are remarkable model systems for investigating QCP physics in a metallic environment. For NiCoCrx alloys with x = 0.8, the critical exponents associated with a ferromagnetic quantum critical point (FQCP) are experimentally determined from low temperature magnetization and heat capacity measurements. For the first time, all of the five critical exponents ( gamma-subT =1/2 , beta-subT = 1, delta = 3/2, nuz-subm = 2, alpha-bar-subT = 0) are in remarkable agreement with predictions of Belitz-Kirkpatrick-Vojta (BKV) theory in the asymptotic limit of high disorder. Using these critical exponents, excellent scaling of the magnetization data is demonstrated with no adjustable parameters. We also find a divergence of the magnetic Gruneisen parameter, consistent with a FQCP. This work therefore demonstrates that entropy stabilized concentrated solid solutions represent a unique platform to study quantum critical behavior in a highly tunable class of materials. △ Less

Submitted 15 May, 2017; originally announced May 2017.

Comments: 17 pages, 7 figures

Nanoscale self-templating for oxide epitaxy with large symmetry mismatch

Authors: Xiang Gao, Shinbuhm Lee, John Nichols, Tricia L. Meyer, Thomas Z. Ward, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 termi… ▽ More Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer enables the epitaxial connection of the two materials despite their large symmetry and lattice mismatch. △ Less

Submitted 26 September, 2016; originally announced September 2016.

Comments: 16 pages, 4 figures

Symmetry-driven atomic rearrangement at a brownmillerite-perovskite interface

Authors: Tricia L. Meyer, Hyoungjeen Jeen, Xiang Gao, Jonathan R. Petrie, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Many of the recent advancements in oxide heterostructures have been attributed to modification of spin, charge, lattice, and orbital order parameters at atomically well-defined interfaces. However, the details on the structural, chemical, and electrostatic evolution of interfaces comprised of materials with different crystallographic symmetries remain to be understood. In this work, we have mapped… ▽ More Many of the recent advancements in oxide heterostructures have been attributed to modification of spin, charge, lattice, and orbital order parameters at atomically well-defined interfaces. However, the details on the structural, chemical, and electrostatic evolution of interfaces comprised of materials with different crystallographic symmetries remain to be understood. In this work, we have mapped out the interfacial connectivity of atoms of two dissimilar materials, the perovskite SrTiO3 and the brownmillerite SrCoO2.5, using high resolution scanning transmission electron microscopy and geometric phase analysis. We observed unique symmetry-mismatch driven atomic displacements restricted to only the first few atomic layers, which can critically modify the properties of the system. Provided that SrCoO2.5 is a promising energy material due to its open framework structure, the improved understanding of the interfacial structure on the atomic level can lead to the rational design of novel oxide heterostructures. △ Less

Submitted 19 November, 2015; originally announced November 2015.

Journal ref: Adv. Electron. Mater. 1, 1500201 (2015)

Orbital occupancy and charge do** in iron-based superconductors

Authors: Claudia Cantoni, Jonathan E. Mitchell, Andrew F. May, Michael A. McGuire, Juan-Carlos Idrobo, Tom Berlijn, Elbio Dagotto, Matthew F. Chisholm, Wu Zhou, Stephen J. Pennycook, Athena S. Sefat, Brian C. Sales

Abstract: Iron-based superconductors (FBS) comprise several families of compounds having the same atomic building blocks for superconductivity, but large discrepancies among their physical properties. A longstanding goal in the field has been to decipher the key underlying factors controlling TC and the various do** mechanisms. In FBS materials this is complicated immensely by the different crystal and ma… ▽ More Iron-based superconductors (FBS) comprise several families of compounds having the same atomic building blocks for superconductivity, but large discrepancies among their physical properties. A longstanding goal in the field has been to decipher the key underlying factors controlling TC and the various do** mechanisms. In FBS materials this is complicated immensely by the different crystal and magnetic structures exhibited by the different families. In this paper, using aberration-corrected scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS), we observe a universal behavior in the hole concentration and magnetic moment across different families. All the parent materials have the same total number of electrons in the Fe 3d bands; however, the local Fe magnetic moment varies due to different orbital occupancy. Although the common understanding has been that both long-range and local magnetic moments decrease with do**, we find that, near the onset of superconductivity, the local magnetic moment increases and shows a dome-like maximum near optimal do**, where no ordered magnetic moment is present. In addition, we address a longstanding debate concerning how Co substitutions induces superconductivity in the 122 arsenide family, showing that the 3d band filling increases a function of do**. These new microscopic insights into the properties of FBS demonstrate the importance of spin fluctuations for the superconducting state, reveal changes in orbital occupancy among different families of FBS, and confirm charge do** as one of the mechanisms responsible for superconductivity in 122 arsenides. △ Less

Submitted 3 October, 2014; originally announced October 2014.

Journal ref: Advanced Materials 26, 6193 (2014)

Orienting oxygen vacancies for fast catalytic reaction

Authors: Hyoungjeen Jeen, Zhonghe Bi, Woo Seok Choi, Matthew F. Chisholm, Craig A. Bridges, M. Parans Paranthaman, Ho Nyung Lee

Abstract: Catalysis is indispensable to chemical processes and relevant to many aspects of modern life. Owing to the intriguing electronic structures and good ionic properties, multivalent transition metal oxides have attracted attention as key catalysts for various energy and environmental applications. Here, we demonstrate that brownmillerite strontium cobaltite (SrCoO2.5) can be a good cathode material f… ▽ More Catalysis is indispensable to chemical processes and relevant to many aspects of modern life. Owing to the intriguing electronic structures and good ionic properties, multivalent transition metal oxides have attracted attention as key catalysts for various energy and environmental applications. Here, we demonstrate that brownmillerite strontium cobaltite (SrCoO2.5) can be a good cathode material for sold oxide fuel cells and rechargeable batteries due to the open oxygen frameworks. When the orientation of oxygen vacancy channels (OVCs) is properly controlled, one can drastically increase the surface oxygen exchange rate approximately up to two orders of magnitude. The improved oxygen reduction kinetics is attributed to a substantial decrease in the thermal activation energy. Importantly, the strong enhancement of crystallographic orientation-dependent oxygen reduction reaction required the creation of neither structural disorders nor chemical do**. Thus, our epitaxial approach can pave a novel pathway to providing precise interpretation of oxygen reduction reactions and to develo** oxide-based energy materials. △ Less

Submitted 3 October, 2013; originally announced October 2013.

Journal ref: Adv. Mater. 25, 6459 (2013)

Reversible redox reactions in an epitaxially stabilized SrCoOx oxygen sponge

Authors: Hyoungjeen Jeen, Woo Seok Choi, Michael D. Biegalski, Chad M. Folkman, I-Cheng Tung, Dillon D. Fong, John W. Freeland, Dongwon Shin, Hiromichi Ohta, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here… ▽ More Fast, reversible redox reactions in solids at low temperatures without thermomechanical degradation are a promising strategy for enhancing the overall performance and lifetime of many energy materials and devices. However, the robust nature of the cation's oxidation state and the high thermodynamic barrier have hindered the realization of fast catalysis and bulk diffusion at low temperatures. Here, we report a significant lowering of the redox temperature by epitaxial stabilization of strontium cobaltites (SrCoOx) grown directly as one of two distinct crystalline phases, either the perovskite SrCoO3-δ or the brownmillerite SrCoO2.5. Importantly, these two phases can be reversibly switched at a remarkably reduced temperature (200~300 °C) in a considerably short time (< 1 min) without destroying the parent framework. The fast, low temperature redox activity in SrCoO3-δ is attributed to a small Gibbs free energy difference between two topotatic phases. Our findings thus provide useful information for develo** highly sensitive electrochemical sensors and low temperature cathode materials. △ Less

Submitted 26 August, 2013; originally announced August 2013.

Journal ref: Nature Mater. 12, 1057 (2013)

Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Authors: Woo Seok Choi, Christopher M. Rouleau, Sung Seok A. Seo, Zhenlin Luo, Hua Zhou, Timothy T. Fister, Jeffrey A. Eastman, Paul H. Fuoss, Dillon D. Fong, Jonathan Z. Tischler, Gyula Eres, Matthew F. Chisholm, Ho Nyung Lee

Abstract: Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most impo… ▽ More Advances in synthesis techniques and materials understanding have given rise to oxide heterostructures with intriguing physical phenomena that cannot be found in their constituents. In these structures, precise control of interface quality, including oxygen stoichiometry, is critical for unambiguous tailoring of the interfacial properties, with deposition of the first monolayer being the most important step in sha** a well-defined functional interface. Here, we studied interface formation and strain evolution during the initial growth of LaAlO3 on SrTiO3 by pulsed laser deposition, in search of a means for controlling the atomic-sharpness of the interfaces. Our experimental results show that growth of LaAlO3 at a high oxygen pressure dramatically enhances interface abruptness. As a consequence, the critical thickness for strain relaxation was increased, facilitating coherent epitaxy of perovskite oxides. This provides a clear understanding of the role of oxygen pressure during the interface formation, and enables the synthesis of oxide heterostructures with chemically-sharper interfaces. △ Less

Submitted 6 October, 2012; originally announced October 2012.

Comments: 25 pages

Journal ref: Adv. Mater. 24, 6423-6428 (2012)

Wide band gap tunability in complex transition metal oxides by site-specific substitution

Authors: Woo Seok Choi, Matthew F. Chisholm, David J. Singh, Taekjib Choi, Gerald E. Jellison Jr, Ho Nyung Lee

Abstract: Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferr… ▽ More Fabricating complex transition metal oxides with a tuneable band gap without compromising their intriguing physical properties is a longstanding challenge. Here we examine the layered ferroelectric bismuth titanate and demonstrate that, by site-specific substitution with the Mott insulator lanthanum cobaltite, its band gap can be narrowed as much as one electron volt, while remaining strongly ferroelectric. We find that when a specific site in the host material is preferentially substituted, a split-off state responsible for the band gap reduction is created just below the conduction band of bismuth titanate. This provides a route for controlling the band gap in complex oxides for use in emerging oxide opto-electronic and energy applications. △ Less

Submitted 21 February, 2012; originally announced February 2012.

Journal ref: Nature Communications 3, 689 (2012)

Atomic-scale compensation phenomena at polar interfaces

Authors: Matthew F. Chisholm, Weidong Luo, Mark P. Oxley, Sokrates T. Pantelides, Ho Nyung Lee

Abstract: The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric po… ▽ More The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density functional theory how interfaces cope with the need to terminate ferroelectric polarization. In one case, we show evidence for ionic screening, which has been predicted by theory but never observed. For a ferroelectric film on an insulating substrate, we found that compensation can be mediated by interfacial charge generated, for example, by oxygen vacancies. △ Less

Submitted 26 October, 2010; originally announced October 2010.

Comments: 3 figures

Nonlinear Hall effect and multichannel conduction in LaTiO3/SrTiO3 superlattices

Authors: J. S. Kim, S. S. A. Seo, M. F. Chisholm, R. K. Kremer, H. -U. Habermeier, B. Keimer, H. N. Lee

Abstract: We report magneto-transport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-do** geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduc… ▽ More We report magneto-transport properties of heterointerfaces between the Mott insulator LaTiO3 and the band insulator SrTiO3 in a delta-do** geometry. At low temperatures, we have found a strong nonlinearity in the magnetic field dependence of the Hall resistivity, which can be effectively controlled by varying the temperature and the electric field. We attribute this effect to multichannel conduction of interfacial charges generated by an electronic reconstruction. In particular, the formation of a highly mobile conduction channel revealed by our data is explained by the greatly increased dielectric permeability of SrTiO3 at low temperatures, and its electric-field dependence reflects the spatial distribution of the quasi-two-dimensional electron gas. △ Less

Submitted 5 April, 2010; originally announced April 2010.

Comments: 23 pages, 4 figures in the main text, 6 figures in the Supplementary Information

Ferroelectricity in artificial bicolor oxide superlattices

Authors: Sung Seok A. Seo, Jun Hee Lee, Ho Nyung Lee, Matthew F. Chisholm, Woo Seok Choi, Dong Jik Kim, Ji Young Jo, Hanchul Kim, Jaejun Yu, Tae Won Noh

Abstract: We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly… ▽ More We report on the growth and properties of high quality bicolor oxide superlattices, composed of two perovskites out of BaTiO3, CaTiO3, and SrTiO3. The artificially grown superlattices are structurally unique and have a macroscopically homogeneous phase, which is not feasible to recreate in bulk form. By artificial structuring, it is found that the polarization of such superlattices can be highly increased as compared to pseudo-binary ceramics with the same overall composition. Such strong enhancement in superlattice is attributed to newly-developed ionic motions of A-site cations at the hetero-interfaces due to the interfacial coupling of electrostatic and elastic interactions, which cannot be found in single phase materials. △ Less

Submitted 12 September, 2007; originally announced September 2007.

Comments: 15 pages, 4 figures

Journal ref: Advanced Materials 19, 2460 (2007)

Suppressed dependence of polarization on epitaxial strain in highly polar ferroelectrics

Authors: Ho Nyung Lee, Serge M. Nakhmanson, Matthew F. Chisholm, Hans M. Christen, Karin M. Rabe, David Vanderbilt

Abstract: A combined experimental and computational investigation of coupling between polarization and epitaxial strain in highly polar ferroelectric PbZr_0.2Ti_0.8O_3 (PZT) thin films is reported. A comparison of the properties of relaxed (tetragonality c/a = 1.05) and highly-strained (c/a = 1.09) epitaxial films shows that polarization, while being amongst the highest reported for PZT or PbTiO_3 in eith… ▽ More A combined experimental and computational investigation of coupling between polarization and epitaxial strain in highly polar ferroelectric PbZr_0.2Ti_0.8O_3 (PZT) thin films is reported. A comparison of the properties of relaxed (tetragonality c/a = 1.05) and highly-strained (c/a = 1.09) epitaxial films shows that polarization, while being amongst the highest reported for PZT or PbTiO_3 in either film or bulk forms (P_r = 82 microC/cm^2), is almost independent of the epitaxial strain. We attribute this behavior to a suppressed sensitivity of the A-site cations to epitaxial strain in these Pb-based perovskites, where the ferroelectric displacements are already large, contrary to the case of less polar perovskites, such as BaTiO_3. In the latter case, the A-site cation (Ba) and equatorial oxygen displacements can lead to substantial polarization increases. △ Less

Submitted 18 April, 2007; originally announced April 2007.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 98, 217602 (2007).

Fluctuation Effects on the Physical Properties of Cd2Re2O7 Near 200 K

Authors: R. **, J. He, J. R. Thompson, M. F. Chisholm, B. C. Sales, D. Mandrus

Abstract: Experimental investigation of the resistivity $ρ$, susceptibility $χ$, specific heat C$_p$, and Hall coefficient R$_H$ of the pyrochlore Cd$_2$Re$_2$O$_7$ reveals the presence of a continuous phase transition of uncertain origin with critical temperature T* = 200 K. Electron and X-ray diffraction measurements indicate that a commensurate structural transformation accompanies the changes in the e… ▽ More Experimental investigation of the resistivity $ρ$, susceptibility $χ$, specific heat C$_p$, and Hall coefficient R$_H$ of the pyrochlore Cd$_2$Re$_2$O$_7$ reveals the presence of a continuous phase transition of uncertain origin with critical temperature T* = 200 K. Electron and X-ray diffraction measurements indicate that a commensurate structural transformation accompanies the changes in the electronic properties, implying that lattice as well as electronic degrees of freedom are involved in the transition. Remarkable scaling relationships between $ρ$, $χ$, and C$_p$ are observed, indicating that fluctuations are crucial in the transition regime. Scenarios involving both spin and ionic density fluctuations are considered in the evaluation of the data. Although the observed structural transition suggests that ionic density fluctuations are likely to be important, a scaling relationship between $ρ$ and $χ$ over a wide temperature range suggests that spin fluctuations may be playing a role as well. △ Less

Submitted 4 September, 2001; v1 submitted 24 August, 2001; originally announced August 2001.

Comments: 4 pages, 4 figures