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Evidence of directional structural superlubricity and Lévy flights in a van der Waals heterostructure
Authors:
Maxime Le Ster,
Paweł Krukowski,
Maciej Rogala,
Paweł Dabrowski,
Iaroslav Lutsyk,
Klaudia Toczek,
Krzysztof Podlaski,
Tefvik O. Mendeş,
Francesca Genuzio,
Andrea Locatelli,
Guan Bian,
Tai-Chang Chiang,
Simon A. Brown,
Paweł J. Kowalczyk
Abstract:
Structural superlubricity is a special frictionless contact in which two crystals are in incommensurate arrangement such that relative in-plane translation is associated with vanishing energy barrier crossing. So far, it has been realized in multilayer graphene and other van der Waals two-dimensional crystals with hexagonal or triangular crystalline symmetries, leading to isotropic frictionless co…
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Structural superlubricity is a special frictionless contact in which two crystals are in incommensurate arrangement such that relative in-plane translation is associated with vanishing energy barrier crossing. So far, it has been realized in multilayer graphene and other van der Waals two-dimensional crystals with hexagonal or triangular crystalline symmetries, leading to isotropic frictionless contacts. Directional structural superlubricity, to date unrealized in two-dimensional systems, is possible when the reciprocal lattices of the two crystals coincide in one direction only. Here, we evidence directional structural superlubricity a $α$-bismuthene/graphite van der Waals system, manifested by spontaneous hop** of the islands over hundreds of nanometres at room temperature, resolved by low-energy electron microscopy and supported by registry simulations. Statistical analysis of individual and collective $α$-bismuthene islands populations reveal a heavy-tailed distribution of the hop** lengths and sticking times indicative of Lévy flight dynamics, largely unobserved in massive condensed-matter systems.
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Submitted 24 June, 2024;
originally announced June 2024.
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Consistency between reflection M-EELS and optical spectroscopy measurements of the long-wavelength density response of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$
Authors:
** Chen,
Xuefei Guo,
Christian Boyd,
Simon Bettler,
Caitlin Kengle,
Dipanjan Chaudhuri,
Farzaneh Hoveyda,
Ali Husain,
John Schneeloch,
Genda Gu,
Philip Phillips,
Bruno Uchoa,
Tai-Chang Chiang,
Peter Abbamonte
Abstract:
The density fluctuation spectrum captures many fundamental properties of strange metals. Using momentum-resolved electron energy-loss spectroscopy (M-EELS), we recently showed that the density response of the strange metal Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (Bi-2212) at large momentum, $q$, exhibits a constant-in-frequency continuum [Mitrano, PNAS $\textbf{115}$, 5392 (2018); Husain, PRX $\textbf{9}$,…
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The density fluctuation spectrum captures many fundamental properties of strange metals. Using momentum-resolved electron energy-loss spectroscopy (M-EELS), we recently showed that the density response of the strange metal Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (Bi-2212) at large momentum, $q$, exhibits a constant-in-frequency continuum [Mitrano, PNAS $\textbf{115}$, 5392 (2018); Husain, PRX $\textbf{9}$, 041062 (2019)] reminiscent of the marginal Fermi liquid (MFL) hypothesis of the late 1980s [Varma, PRL $\textbf{63}$, 1996 (1989)]. However, reconciling this observation with infrared (IR) optics experiments, which show a well-defined plasmon excitation at $q \sim 0$, has been challenging. Here we report M-EELS measurements of Bi-2212 using 4$\times$ improved momentum resolution, allowing us to reach the optical limit. For momenta $q<0.04$ r.l.u., the M-EELS data show a plasmon feature that is quantitatively consistent with IR optics. For $q>0.04$ r.l.u., the spectra become incoherent with an MFL-like, constant-in-frequency form. We speculate that, at finite frequency, $ω$, and nonzero $q$, some attribute of this Planckian metal randomizes the probe electron, causing it to lose information about its own momentum.
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Submitted 13 December, 2023; v1 submitted 6 June, 2023;
originally announced June 2023.
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Observation of 2D Weyl Fermion States in Epitaxial Bismuthene
Authors:
Qiangsheng Lu,
P. V. Sreenivasa Reddy,
Hoyeon Jeon,
Alessandro R. Mazza,
Matthew Brahlek,
Weikang Wu,
Shengyuan A. Yang,
Jacob Cook,
Clayton Conner,
Xiaoqian Zhang,
Amarnath Chakraborty,
Yueh-Ting Yao,
Hung-Ju Tien,
Chun-Han Tseng,
Po-Yuan Yang,
Shang-Wei Lien,
Hsin Lin,
Tai-Chang Chiang,
Giovanni Vignale,
An-** Li,
Tay-Rong Chang,
Rob G. Moore,
Guang Bian
Abstract:
A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we repor…
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A two-dimensional (2D) Weyl semimetal featuring a spin-polarized linear band dispersion and a nodal Fermi surface is a new topological phase of matter. It is a solid-state realization of Weyl fermions in an intrinsic 2D system. The nontrivial topology of 2D Weyl cones guarantees the existence of a new form of topologically protected boundary states, Fermi string edge states. In this work, we report the realization of a 2D Weyl semimetal in monolayer-thick epitaxial bismuthene grown on SnS(Se) substrate. The intrinsic band gap of bismuthene is eliminated by the space-inversion-symmetry-breaking substrate perturbations, resulting in a gapless spin-polarized Weyl band dispersion. The linear dispersion and spin polarization of the Weyl fermion states are observed in our spin and angle-resolved photoemission measurements. In addition, the scanning tunneling microscopy/spectroscopy reveals a pronounced local density of states at the edge, suggesting the existence of Fermi string edge states. These results open the door for the experimental exploration of the exotic properties of Weyl fermion states in reduced dimensions.
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Submitted 6 March, 2023;
originally announced March 2023.
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Influence of Structural Defects on Charge Density Waves in 1T-TaS2
Authors:
I. Lutsyk,
K. Szalowski,
P. Krukowski,
P. Dabrowski,
M. Rogala,
W. Kozlowski,
M. Le Ster,
M. Piskorski,
D. A. Kowalczyk,
W. Rys,
R. Dunal,
A. Nadolska,
K. Toczek,
P. Przybysz,
E. Lacinska,
J. Binder,
A. Wysmolek,
N. Olszowska,
J. J. Kolodziej,
M. Gmitra,
T. Hattori,
Y. Kuwahara,
G. Bian,
T. -C. Chiang,
P. J. Kowalczyk
Abstract:
The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectivel…
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The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to the single CDW site, with single exception which effectively behaves as a dopant, leading to band bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved by local density of states (LDOS) map** with STS. We correlate atomically-resolved STM periodicity of defect-free 1T-TaS2 to top sulfur atoms and introduce tiling of the surface using equiangular hexagon. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure by introducing sulfur vacancy or substituting sulfur with oxygen. The sulfur vacancy is characterized by metallic properties and is identified as an origin of one of observed experimentally defects. Whereas in the case of the latter, the oxidation of 1T-TaS2 is found to result in the loss of magnetic properties expected in defect-free material.
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Submitted 1 March, 2023;
originally announced March 2023.
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Dimensional crossover and symmetry transformation of the charge density waves in VSe2
Authors:
P. Chen,
Y. -H. Chan,
R. -Y. Liu,
H. T. Zhang,
Q. Gao,
A. -V. Fedorov,
M. Y. Chou,
T. -C. Chiang
Abstract:
Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase spontaneously broken, in contrast to the (4 x 4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe2 ranging from a single lay…
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Collective phenomena in solids can be sensitive to the dimensionality of the system; a case of special interest is VSe2, which shows a (r7 x r3) charge density wave (CDW) in the single layer with the three-fold symmetry in the normal phase spontaneously broken, in contrast to the (4 x 4) in-plane CDW in the bulk. Angle-resolved photoemission spectroscopy (ARPES) from VSe2 ranging from a single layer to the bulk reveals the evolution of the electronic structure including the Fermi surface contours and the CDW gap. At a thickness of two layers, the ARPES maps are already nearly bulklike, but the transition temperature TC for the (4 x 4) CDW is much higher than the bulk value of 110 K. These results can be understood as a result of dimensional crossover of phonon instability driven by a competition of nesting vectors. Our study provides key insights into the CDW mechanisms and offers a perspective in the search and control of emergent phases in quantum materials.
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Submitted 20 February, 2023;
originally announced February 2023.
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Evidence of high-temperature exciton condensation in a two-dimensional semimetal
Authors:
Qiang Gao,
Yang-hao Chan,
Yuzhe Wang,
Haotian Zhang,
**xu Pu,
Shengtao Cui,
Yichen Yang,
Zhengtai Liu,
Dawei Shen,
Zhe Sun,
Juan Jiang,
Tai C. Chiang,
Peng Chen
Abstract:
Electrons and holes can spontaneously form excitons and condense in a semimetal or semiconductor, as predicted decades ago. This type of Bose condensation can happen at much higher temperatures in comparison with dilute atomic gases. Two-dimensional (2D) materials with reduced Coulomb screening around the Fermi level are promising for realizing such a system. Here we report a change in the band st…
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Electrons and holes can spontaneously form excitons and condense in a semimetal or semiconductor, as predicted decades ago. This type of Bose condensation can happen at much higher temperatures in comparison with dilute atomic gases. Two-dimensional (2D) materials with reduced Coulomb screening around the Fermi level are promising for realizing such a system. Here we report a change in the band structure accompanied by a phase transition at about 180 K in single-layer ZrTe2 based on angle-resolved photoemission spectroscopy (ARPES) measurements. Below the transition temperature, gap opening and development of an ultra-flat band top around the zone center are observed. This gap and the phase transition are rapidly suppressed with extra carrier densities introduced by adding more layers or dopants on the surface. The results suggest the formation of an excitonic insulating ground state in single-layer ZrTe2, and the findings are rationalized by first principles calculations and a self-consistent mean-field theory. Our study provides evidence for exciton condensation in a 2D semimetal and demonstrates strong dimensionality effects on the formation of intrinsic bound electron-hole pairs in solids.
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Submitted 7 February, 2023;
originally announced February 2023.
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Edge States of α-Bismuthene Nanostructures
Authors:
Sara Salehitaleghani,
Tobias Maerkl,
Pawel J Kowalczyk,
Maxime Le Ster,
Xiaoxiong Wang,
Guang Bian,
Tai-Chang Chiang,
Simon A Brown
Abstract:
We present a systematic investigation of the edge states of two-dimensional α-bismuthene (α-Bi) structures self-assembled on HOPG substrates, using scanning tunnelling microscopy and scanning tunnelling spectroscopy. The measurements are carried out for 3ML, 5ML and 7ML thick Bi structures. Our spectroscopy studies reveal clear features at the edges of the 5ML and 7ML thick structures, and the pos…
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We present a systematic investigation of the edge states of two-dimensional α-bismuthene (α-Bi) structures self-assembled on HOPG substrates, using scanning tunnelling microscopy and scanning tunnelling spectroscopy. The measurements are carried out for 3ML, 5ML and 7ML thick Bi structures. Our spectroscopy studies reveal clear features at the edges of the 5ML and 7ML thick structures, and the positions of the edge states (ESs) coincide with the topographical step edges. In contrast, in 3ML structures the ESs appear to be absent and instead new states are sometimes observed, far from the topographical edge. These states are associated with a moiré pattern and result from strain-induced modulation of the topology. Our observations demonstrate the impact on the edge states of coupling to adjacent structures.
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Submitted 1 January, 2023;
originally announced January 2023.
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Anharmonic multiphonon origin of the valence plasmon in SrTi1-xNbxO3
Authors:
Caitlin S. Kengle,
Samantha I. Rubeck,
Melinda Rak,
** Chen,
Faren Hoveyda,
Simon Bettler,
Ali Husain,
Matteo Mitrano,
Alexander Edelman,
Peter Littlewood,
Tai-Chang Chiang,
Fahad Mahmood,
Peter Abbamonte
Abstract:
Doped SrTi1-xNbxO3 exhibits superconductivity and a mid-infrared optical response reminiscent of copper-oxide superconductors. Strangely, its plasma frequency, omega_p, increases by a factor of ~3 when cooling from 300 K to 20 K, without any accepted explanation. Here, we present momentum-resolved electron energy loss spectroscopy (M-EELS) measurements of SrTi1-xNbxO3 at nonzero momentum, q. We fi…
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Doped SrTi1-xNbxO3 exhibits superconductivity and a mid-infrared optical response reminiscent of copper-oxide superconductors. Strangely, its plasma frequency, omega_p, increases by a factor of ~3 when cooling from 300 K to 20 K, without any accepted explanation. Here, we present momentum-resolved electron energy loss spectroscopy (M-EELS) measurements of SrTi1-xNbxO3 at nonzero momentum, q. We find that the infrared feature previously identified as a plasmon is present at large q in insulating SrTiO3, where it exhibits the same temperature dependence and may be identified as an anharmonic, multiphonon background. Do** with Nb increases its peak energy and total spectral weight, drawing this background to lower q where it becomes visible in IR optics experiments. We conclude that the "plasmon" in doped SrTi1-xNbxO3 is not a free-carrier mode, but a composite excitation that inherits its unusual properties from the lattice anharmonicity of the insulator.
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Submitted 26 October, 2022;
originally announced October 2022.
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Observation of Unpinned Two-Dimensional Dirac States in Antimony Single Layers with Phosphorene Structure
Authors:
Qiangsheng Lu,
Matthew Snyder,
Kyle Y. Chen,
Xiaoqian Zhang,
Jacob Cook,
Duy Tung Nguyen,
P. V. Sreenivasa Reddy,
Tay-Rong Chang,
Pawel J. Kowalczyk,
Simon A. Brown,
Tai-Chang Chiang,
Shengyuan A. Yang,
Guang Bian
Abstract:
The discovery of graphene has stimulated enormous interest in two-dimensional (2D) electron gas with linear band structure. 2D Dirac materials possess many intriguing physical properties such as high carrier mobility and zero-energy Landau level thanks to the relativistic dispersion and chiral spin/pseudospin texture. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points…
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The discovery of graphene has stimulated enormous interest in two-dimensional (2D) electron gas with linear band structure. 2D Dirac materials possess many intriguing physical properties such as high carrier mobility and zero-energy Landau level thanks to the relativistic dispersion and chiral spin/pseudospin texture. 2D Dirac states discovered so far are exclusively pinned at high-symmetry points of the Brillouin zone, for example, surface Dirac states at $\overlineΓ$ in topological insulators Bi$_2$Se(Te)$_3$ and Dirac cones at $K$ and $K'$ in graphene. In this work, we report the realization of 2D Dirac states at generic $k$-points in antimony atomic layers with phosphorene structure ($i.e.$ $α$-antimonene). The unpinned nature enables versatile ways to control the locations of the Dirac points in momentum space. In addition, dispersions around the unpinned Dirac points exhibit intrinsically anisotropic behaviors due to the reduced symmetry of generic momentum points. These properties make the $α$-antimonene films a promising platform for exploring interesting physics in unpinned 2D Dirac fermions that are distinct from the conventional Dirac states in graphene.
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Submitted 18 October, 2021; v1 submitted 10 October, 2021;
originally announced October 2021.
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Kramers-Weyl fermions in the chiral charge density wave material (TaSe$_4$)$_2$I
Authors:
Soyeun Kim,
Robert C. McKay,
Nina Bielinski,
Chengxi Zhao,
Meng-Kai Lin,
Joseph A. Hlevyack,
Xuefei Guo,
Sung-Kwan Mo,
Peter Abbamonte,
Tai-Chang Chiang,
André Schleife,
Daniel P. Shoemaker,
Barry Bradlyn,
Fahad Mahmood
Abstract:
The quasi-one-dimensional chiral charge density wave (CDW) material (TaSe$_4$)$_2$I has been recently predicted to host Kramers-Weyl (KW) fermions which should exist in the vicinity of high symmetry points in the Brillouin zone in chiral materials with strong spin-orbit coupling. However, direct spectroscopic evidence of KW fermions is limited. Here we use helicity-dependent laser-based angle reso…
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The quasi-one-dimensional chiral charge density wave (CDW) material (TaSe$_4$)$_2$I has been recently predicted to host Kramers-Weyl (KW) fermions which should exist in the vicinity of high symmetry points in the Brillouin zone in chiral materials with strong spin-orbit coupling. However, direct spectroscopic evidence of KW fermions is limited. Here we use helicity-dependent laser-based angle resolved photoemission spectroscopy (ARPES) in conjunction with tight-binding and first-principles calculations to identify KW fermions in (TaSe$_4$)$_2$I. We find that topological and symmetry considerations place distinct constraints on the (pseudo-) spin texture and the observed spectra around a KW node. We further reveal an interplay between the spin texture around the chiral KW node and the onset of CDW order in (TaSe$_4$)$_2$I. Our findings highlight the unique topological nature of (TaSe$_4$)$_2$I and provide a pathway for identifying KW fermions in other chiral materials.
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Submitted 24 August, 2021;
originally announced August 2021.
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Dirac Fermion Cloning, Moir$\bf{é}$ Flat Bands and Magic Lattice Constants in Epitaxial Monolayer Graphene
Authors:
Qiangsheng Lu,
Ching-Kai Chiu,
Congcong Le,
Jacob Cook,
Xiaoqian Zhang,
Xiaoqing He,
Mohammad Zarenia,
Mitchel Vaninger,
Paul F. Miceli,
Chang Liu,
Tai-Chang Chiang,
Giovanni Vignale,
Guang Bian
Abstract:
Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersio…
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Tuning interactions between Dirac states in graphene has attracted enormous interest because it can modify the electronic spectrum of the two-dimensional material, enhance electron correlations, and give rise to novel condensed-matter phases such as superconductors, Mott insulators, Wigner crystals and quantum anomalous Hall insulators. Previous works predominantly focus on the flat band dispersion of coupled Dirac states from different graphene layers. In this work, we propose a new route to realizing flat band physics in monolayer graphene under a periodic modulation from substrates. We take gaphene/SiC heterostructure as a role model and demonstrate experimentally the substrate modulation leads to Dirac fermion cloning and consequently, the proximity of the two Dirac cones of monolayer graphene in momentum space. Our theoretical modeling captures the cloning mechanism of Dirac states and indicates that flat bands can emerge at certain magic lattice constants of substrate when the period of modulation becomes nearly commensurate with the $(\sqrt{3}\times\sqrt{3})R30^{\circ}$ supercell of graphene. The results show that the epitaxial monolayer graphene is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.
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Submitted 18 March, 2021;
originally announced March 2021.
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Double band inversion in the topological phase transition of Ge1-xSnx alloys
Authors:
Rui Tan,
Qirui Yang,
Ruiyuan Chen,
Yu Qiao,
Shouqiao Tan,
Peng Wang,
Tai-Chang Chiang,
Xiaoxiong Wang
Abstract:
We use first-principles simulation and virtual crystal approximation to reveal the unique double band inversion and topological phase transition in Ge1-xSnx alloys. Wavefunction parity, spatial charge distribution and surface state spectrum analyses suggest that the band inversion in Ge1-xSnx is relayed by its first valence band. As the system evolves from Ge to α-Sn, its conduction band moves dow…
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We use first-principles simulation and virtual crystal approximation to reveal the unique double band inversion and topological phase transition in Ge1-xSnx alloys. Wavefunction parity, spatial charge distribution and surface state spectrum analyses suggest that the band inversion in Ge1-xSnx is relayed by its first valence band. As the system evolves from Ge to α-Sn, its conduction band moves down, and inverts with the first and the second valence bands consecutively. The first band inversion makes the system nontrivial, while the second one does not change the topological invariant of the system. Both the band inversions yield surface modes spanning the individual inverted gaps, but only the surface mode in the upper gap associates with the nontrivial nature of tensile-strained α-Sn.
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Submitted 18 January, 2021;
originally announced January 2021.
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Observation of a Smoothly Tunable Dirac Point in $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$
Authors:
Sean Howard,
Arjun Raghavan,
Davide Iaia,
Caizhi Xu,
David Flötotto,
Man-Hong Wong,
Sung-Kwan Mo,
Bahadur Singh,
Raman Sankar,
Hsin Lin,
Tai-Chang Chiang,
Vidya Madhavan
Abstract:
State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of 'x' values from 0 to 1, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectroscopy (ARPES). Our results show that the…
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State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_{1-x})_{2}Te_{4}$, for a range of 'x' values from 0 to 1, using a combination of Fourier Transform Scanning Tunneling Spectroscopy (FT-STS) and Angle-Resolved Photoemission Spectroscopy (ARPES). Our results show that the Dirac point shifts linearly with 'x', crossing the Fermi energy near x = 0.7. This novel observation of a smoothly tunable, isolated Dirac point crossing through the topological transport regime and having strong linear dependence with substitution can be critical for future topological spintronics applications.
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Submitted 21 October, 2021; v1 submitted 13 January, 2021;
originally announced January 2021.
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Observation of Pines' Demon in Sr$_2$RuO$_4$
Authors:
A. A. Husain,
E. W. Huang,
M. Mitrano,
M. S. Rak,
S. I. Rubeck,
X. Guo,
H. Yang,
C. Sow,
Y. Maeno,
B. Uchoa,
T. C. Chiang,
P. E. Batson,
P. W. Phillips,
P. Abbamonte
Abstract:
The characteristic excitation of a metal is its plasmon, which is a quantized collective oscillation of its electron density. In 1956, David Pines predicted that a distinct type of plasmon, dubbed a "demon," could exist in three-dimensional metals containing more than one species of charge carrier. Consisting of out-of-phase movement of electrons in different bands, demons are acoustic, electrical…
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The characteristic excitation of a metal is its plasmon, which is a quantized collective oscillation of its electron density. In 1956, David Pines predicted that a distinct type of plasmon, dubbed a "demon," could exist in three-dimensional metals containing more than one species of charge carrier. Consisting of out-of-phase movement of electrons in different bands, demons are acoustic, electrically neutral, and do not couple to light, so have never been detected in an equilibrium, three-dimensional metal. Nevertheless, demons are believed to be critical for diverse phenomena including phase transitions in mixed-valence semimetals, optical properties of metal nanoparticles, "soundarons" in Weyl semimetals, and high temperature superconductivity in, for example, metal hydrides. Here, we present evidence for a demon in Sr$_2$RuO$_4$ from momentum-resolved electron energy-loss spectroscopy (M-EELS). Formed of electrons in the $β$ and $γ$ bands, the demon is gapless with a room temperature velocity $v=1.065 \pm 0.12 \times 10^5$ m/s and critical momentum $q_c=0.08$ reciprocal lattice units. Its spectral weight violates low-energy partial sum rules, affirming its neutral character. Our study confirms a 66-year old prediction and suggests that demons may be a pervasive feature of multiband metals.
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Submitted 27 May, 2022; v1 submitted 13 July, 2020;
originally announced July 2020.
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Massive suppression of proximity pairing in topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on niobium
Authors:
Joseph A. Hlevyack,
Sahand Najafzadeh,
Meng-Kai Lin,
Takahiro Hashimoto,
Tsubaki Nagashima,
Akihiro Tsuzuki,
Akiko Fukushima,
Cédric Bareille,
Yang Bai,
Peng Chen,
Ro-Ya Liu,
Yao Li,
David Flötotto,
José Avila,
James N. Eckstein,
Shik Shin,
Kozo Okazaki,
T. -C. Chiang
Abstract:
Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evid…
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Interfacing bulk conducting topological Bi$_2$Se$_3$ films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evidenced by ultrahigh-resolution band map**s and by contrasting quantified superconducting gaps with those of heavily n-doped topological Bi$_2$Se$_3$/Nb. The results underscore the limitations of using superconducting proximity effects to realize topological superconductivity in nearly intrinsic systems.
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Submitted 2 June, 2020;
originally announced June 2020.
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Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
Authors:
Ro-Ya Liu,
Meng-Kai Lin,
Peng Chen,
Takeshi Suzuki,
Pip C. J. Clark,
Nathan K. Lewis,
Cephise Cacho,
Emma Springate,
Chia-Seng Chang,
Kozo Okazaki,
Wendy Flavell,
Iwao Matsuda,
Tai-Chang Chiang
Abstract:
Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to develo** ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselen…
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Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to develo** ultrafast optoelectronics. We demonstrate herein that the dynamic response of a system can be drastically modified when its physical dimension is reduced to the atomic scale, the ultimate limit of device miniaturization. A comparative study of single-layer (SL) tungsten diselenide(WSe2) relative to bulk WSe2 shows substantial differences in the transient response as measured by time- and angle-resolved photoemission spectroscopy (TRARPES). The conduction-band minimum in bulk WSe2, populated by optical pum**, decays promptly. The corresponding decay for SL WSe2 is much slower and exhibits two time constants. The results indicate the presence of two distinct decay channels in the SL that are correlated with the breaking of space inversion symmetry in the two-dimensional limit. This symmetry breaking lifts the spin degeneracy of the bands, which in turn causes the blockage of decay for one spin channel. The stark contrast between the single layer and the bulk illustrates the basic carrier scattering processes operating at different timescales that can be substantially modified by dimensional and symmetry-reduction effects.
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Submitted 22 December, 2019;
originally announced December 2019.
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Strong band kinks in magic-thickness Yb films arising from interfacial electron-phonon coupling
Authors:
Yi Wu,
Yuan Fang,
Shuyi Zhou,
Peng Li,
Zhongzheng Wu,
Zhiguang Xiao,
Xiaoxiong Wang,
Chao Cao,
Tai-Chang Chiang,
Yang Liu
Abstract:
Interfacial electron-phonon coupling in ultrathin films has attracted much interest; it can give rise to novel effects and phenomena, including enhanced superconductivity. Here we report an observation of strong kinks in the energy dispersions of quantum well states in ultrathin Yb films grown on graphite. These kinks, arising from interfacial electron-phonon coupling, are most prominent for films…
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Interfacial electron-phonon coupling in ultrathin films has attracted much interest; it can give rise to novel effects and phenomena, including enhanced superconductivity. Here we report an observation of strong kinks in the energy dispersions of quantum well states in ultrathin Yb films grown on graphite. These kinks, arising from interfacial electron-phonon coupling, are most prominent for films with a preferred ("magic") thickness of 4 monolayers, which are strained and hole doped by the substrate. The energy position of the kinks agrees well with the optical phonon energy of graphite, and the extracted electron-phonon coupling strength λ shows a large subband dependence, with a maximum value up to 0.6. The kinks decay rapidly with increasing film thickness, consistent with its interfacial origin. The variation of λ is correlated with evolution of the electronic wave function amplitudes at the interface. A Lifshitz transition occurs just beyond the magic thickness where the heavy Yb 5d bands begin to populate right below the Fermi level.
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Submitted 20 June, 2019;
originally announced June 2019.
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Realisation of Symmetry Enforced Two-Dimensional Dirac Fermions in Nonsymmorphic $α$-Bismuthene
Authors:
Pawel J. Kowalczyk,
Simon A. Brown,
Tobias Maerkl,
Qiangsheng Lu,
Ching-Kai Chiu,
Ying Liu,
Shengyuan A. Yang,
Xiaoxiong Wang,
Ilona Zasada,
Francesca Genuzio,
T. Onur Menteş,
Andrea Locatelli,
Tai-Chang Chiang,
Guang Bian
Abstract:
Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and non-trivial Berry phase play the pivotal role in the remarkable electronic, optical, mechanical and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for…
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Two-dimensional (2D) Dirac-like electron gases have attracted tremendous research interest ever since the discovery of free-standing graphene. The linear energy dispersion and non-trivial Berry phase play the pivotal role in the remarkable electronic, optical, mechanical and chemical properties of 2D Dirac materials. The known 2D Dirac materials are gapless only within certain approximations, for example, in the absence of SOC. Here we report a route to establishing robust Dirac cones in 2D materials with nonsymmorphic crystal lattice. The nonsymmorphic symmetry enforces Dirac-like band dispersions around certain high-symmetry momenta in the presence of SOC. Through $μ$-ARPES measurements we observe Dirac-like band dispersions in $α$-bismuthene. The nonsymmorphic lattice symmetry is confirmed by $μ$-LEED and STM. Our first-principles simulations and theoretical topological analysis demonstrate the correspondence between nonsymmorphic symmetry and Dirac states. This mechanism can be straightforwardly generalized to other nonsymmorphic materials. The results open the door for the search of symmetry enforced Dirac fermions in the vast uncharted world of nonsymmorphic 2D materials.
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Submitted 20 June, 2019;
originally announced June 2019.
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Comment on "Chiral Phase Transition in Charge Ordered 1T-TiSe2" and Supplementary Material on "First-order Forbidden X-ray Diffraction"
Authors:
Meng-Kai Lin,
Joseph A. Hlevyack,
Peng Chen,
Ro-Ya Liu,
T. -C. Chiang
Abstract:
A prior report of the emergence of chirality for the (2x2x2) charge density wave (CDW) in TiSe2 has attracted much interest; the drastic symmetry breaking is highly unusual with few precedents [1]. In that study, key evidence was provided by x-ray diffraction measurements of two superlattice reflections, (1.5 1.5 0.5) and (2.5 1 0). The (2.5 1 0) reflection appeared to show an anomalously large in…
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A prior report of the emergence of chirality for the (2x2x2) charge density wave (CDW) in TiSe2 has attracted much interest; the drastic symmetry breaking is highly unusual with few precedents [1]. In that study, key evidence was provided by x-ray diffraction measurements of two superlattice reflections, (1.5 1.5 0.5) and (2.5 1 0). The (2.5 1 0) reflection appeared to show an anomalously large intensity and a transition onset at ~7 K below that of the (1.5 1.5 0.5) reflection. These observations, aided by modeling, were cited as evidence for a separate chiral transition. In this Comment, we show that the prior conclusions based on x-ray diffraction are erroneous. There is just one transition, and it is achiral.
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Submitted 13 May, 2019; v1 submitted 26 March, 2019;
originally announced March 2019.
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Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms
Authors:
S. Ito,
M. Arita,
J. Haruyama,
B. Feng,
W. -C. Chen,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
G. Bian,
S. -J. Tang,
T. -C. Chiang,
O. Sugino,
F. Komori,
I. Matsuda
Abstract:
The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we…
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The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.
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Submitted 30 January, 2020; v1 submitted 16 March, 2019;
originally announced March 2019.
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Probing the Origin of Extreme Magnetoresistance in Pr/Sm Mono-Antimonides/Bismuthides
Authors:
Zhongzheng Wu,
Fan Wu,
Peng Li,
Chunyu Guo,
Yi Liu,
Zhe Sun,
Cheng-Maw Cheng,
Tai-Chang Chiang,
Chao Cao,
Huiqiu Yuan,
Yang Liu
Abstract:
Combining angle-resolved photoemission spectroscopy and magneto-transport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topolog…
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Combining angle-resolved photoemission spectroscopy and magneto-transport measurements, we systematically investigated the possible origin of the extreme magnetoresistance in Pr/Sm mono-antimonides/bismuthides (PrSb, SmSb, PrBi, SmBi). Our photoemission measurements reveal that the bulk band inversion and surface states are absent (present) in Pr/Sm antimonides (bismuthides), implying that topological surface states are unlikely to play an important role for the observed extreme magnetoresistance. We found that the electron-hole compensation is well satisfied in all these compounds and the bulk band structure exhibits no obvious temperature dependence from 10 K up to 150 K. Simultaneous fittings of the magnetoresistance and Hall coefficient reveal that the carrier mobility is dramatically enhanced at low temperature, which naturally explains the suppression of extreme magnetoresistance at high temperatures. Our results therefore show that the extreme magnetoresistance in these compounds can be well accounted for by the two-band model with good electron-hole compensation. Finally, we found that both PrSb and SmSb exhibit highly linear bulk bands near the X point and lie close to the transition point between a topologically trivial and nontrivial phase, which might be relevant for the observed anomalous quantum oscillations.
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Submitted 8 February, 2019;
originally announced February 2019.
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Unique gap structure and symmetry of the charge density wave in single-layer VSe$_2$
Authors:
P. Chen,
W. -W. Pai,
Y. -H. Chan,
V. Madhavan,
M. Y. Chou,
S. -K. Mo,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different C…
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Single layers of transition metal dichalcogenides (TMDCs) are excellent candidates for electronic applications beyond the graphene platform; many of them exhibit novel properties including charge density waves (CDWs) and magnetic ordering. CDWs in these single layers are generally a planar projection of the corresponding bulk CDWs because of the quasi-two-dimensional nature of TMDCs; a different CDW symmetry is unexpected. We report herein the successful creation of pristine single-layer VSe$_2$, which shows a ($\sqrt7 \times \sqrt3$) CDW in contrast to the (4 $\times$ 4) CDW for the layers in bulk VSe$_2$. Angle-resolved photoemission spectroscopy (ARPES) from the single layer shows a sizable ($\sqrt7 \times \sqrt3$) CDW gap of $\sim$100 meV at the zone boundary, a 220 K CDW transition temperature twice the bulk value, and no ferromagnetic exchange splitting as predicted by theory. This robust CDW with an exotic broken symmetry as the ground state is explained via a first-principles analysis. The results illustrate a unique CDW phenomenon in the two-dimensional limit.
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Submitted 14 November, 2018;
originally announced November 2018.
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In-situ strain tuning of the Dirac surface states in Bi2Se3 films
Authors:
David Floetotto,
Yang Bai,
Yang-Hao Chan,
Peng Chen,
Xiaoxiong Wang,
Paul Rossi,
Cai-Zhi Xu,
Can Zhang,
Joe A. Hlevyack,
Jonathan D. Denlinger,
Hawoong Hong,
Mei-Yin Chou,
Eric J. Mittemeijer,
James N. Eckstein,
Tai-Chang Chiang
Abstract:
Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here, we show that the Dirac surface states of the topological i…
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Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field effects, helical flat bands and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here, we show that the Dirac surface states of the topological insulator Bi2Se3 can be reversibly tuned by an externally applied elastic strain. Performing in-situ x-ray diffraction and in-situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi2Se3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting reversible changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi2Se3 and, more generally, demonstrates a new route toward momentum-resolved map** of strain-induced band structure changes.
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Submitted 1 July, 2018;
originally announced July 2018.
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Experimental and Theoretical Electronic Structure and Symmetry Effects in Ultrathin NbSe2 Films
Authors:
Cai-Zhi Xu,
Xiaoxiong Wang,
Peng Chen,
David Flototto,
Joseph Andrew Hlevyack,
Meng-Kai Lin,
Guang Bian,
Sung-Kwan Mo,
Tai-Chang Chiang
Abstract:
Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among all TMDCs, NbSe2 is of special interest; bulk NbSe2 hosts a charge-density-wave phase at low temperatures and has the highest known superconducting transition t…
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Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among all TMDCs, NbSe2 is of special interest; bulk NbSe2 hosts a charge-density-wave phase at low temperatures and has the highest known superconducting transition temperature, and these properties can be substantially modified in the ultrathin film limit. Motivated by these effects, we report herein a study of few-layer NbSe2 films, with a well-defined single-domain orientation, epitaxially grown on Gallium Arsenide (GaAs). Angle-resolved photoemission spectroscopy (ARPES) was used to determine the electronic band structure and the Fermi surface as a function of layer thickness; first-principles band structure calculations were performed for comparison. The results show interesting changes as the film thickness increases from a monolayer (ML) to several layers. The most notable changes occur between a ML and a bilayer, where the inversion symmetry in bulk NbSe2 is preserved in the bilayer but not in the ML. The results illustrate some basic dimensional effects and provide a basis for further exploring and understanding the properties of NbSe2.
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Submitted 7 June, 2018;
originally announced June 2018.
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Quantum-spin-Hall insulator with a large gap: single-layer 1T' WSe$_2$
Authors:
P. Chen,
W. -W. Pai,
Y. -H. Chan,
W. -L. Sun,
C. -Z. Xu,
D. -S. Lin,
M. Y. Chou,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe$_2$ single layer with th…
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Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum spin Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe$_2$ single layer with the 1T' structure that does not exist in the bulk form of WSe$_2$. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observed a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with do** by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for develo** advanced nanoscale systems and quantum devices.
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Submitted 21 May, 2018;
originally announced May 2018.
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Emergence of charge density waves and a pseudogap in single-layer TiTe2
Authors:
P. Chen,
Woei Wu Pai,
Y. -H. Chan,
A. Takayama,
C. -Z. Xu,
A. Karn,
S. Hasegawa,
M. Y. Chou,
S. -K. Mo,
A. -V. Fedorov,
T. -C. Chiang
Abstract:
Two-dimensional materials constitute a promising platform for develo** nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe$_2$ from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscop…
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Two-dimensional materials constitute a promising platform for develo** nanoscale devices and systems. Their physical properties can be very different from those of the corresponding three-dimensional materials because of extreme quantum confinement and dimensional reduction. Here we report a study of TiTe$_2$ from the single-layer to the bulk limit. Using angle-resolved photoemission spectroscopy and scanning tunneling microscopy and spectroscopy, we observed the emergence of a (2 x 2) charge density wave order in single-layer TiTe$_2$ with a transition temperature of 92 $\pm$ 3 K. Also observed was a pseudogap of about 28 meV at the Fermi level at 4.2 K. Surprisingly, no charge density wave transitions were observed in 2- and multi-layer TiTe$_2$, despite the quasi-two-dimensional nature of the material in the bulk. The unique charge density wave phenomenon in the single layer raises intriguing questions that challenge the prevailing thinking about the mechanisms of charge density wave formation.
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Submitted 14 May, 2018;
originally announced May 2018.
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Tunable Electronic Structure and Surface States in Rare Earth Mono-Bismuthides with Partially Filled f Shell
Authors:
Peng Li,
Zhongzheng Wu,
Fan Wu,
Chao Cao,
Chunyu Guo,
Yi Wu,
Yi Liu,
Zhe Sun,
Cheng-Maw Cheng,
Deng-Sung Lin,
Frank Steglich,
Huiqiu Yuan,
Tai-Chang Chiang,
Yang Liu
Abstract:
Here we report the evolution of bulk band structure and surface states in rare earth mono-bismuthides with partially filled f shell. Utilizing synchrotron-based photoemission spectroscopy, we determined the three-dimensional bulk band structure and identified the bulk band inversions near the X points, which, according to the topological theory, could give rise to nontrivial band topology with odd…
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Here we report the evolution of bulk band structure and surface states in rare earth mono-bismuthides with partially filled f shell. Utilizing synchrotron-based photoemission spectroscopy, we determined the three-dimensional bulk band structure and identified the bulk band inversions near the X points, which, according to the topological theory, could give rise to nontrivial band topology with odd number of gapless topological surface states. Near the surface Gamma bar point, no clear evidence for predicted gapless topological surface state is observed due to its strong hybridization with the bulk bands. Near the M bar point, the two surface states, due to projections from two inequivalent bulk band inversions, interact and give rise to two peculiar sets of gapped surface states. The bulk band inversions and corresponding surface states can be tuned substantially by varying rare earth elements, in good agreement with density-functional theory calculations assuming local f electrons. Our study therefore establishes rare earth mono-bismuthides as an interesting class of materials possessing tunable electronic properties and magnetism, providing a promising platform to search for novel properties in potentially correlated topological materials.
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Submitted 8 February, 2019; v1 submitted 8 February, 2018;
originally announced February 2018.
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Gapped Electronic Structure of Epitaxial Stanene on InSb(111)
Authors:
Cai-Zhi Xu,
Yang-Hao Chan,
Peng Chen,
Xiaoxiong Wang,
David Flötotto,
Joseph Andrew Hlevyack,
Guang Bian,
Sung-Kwan Mo,
Mei-Yin Chou,
Tai-Chang Chiang
Abstract:
Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been…
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Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy (ARPES) measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.
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Submitted 22 November, 2017;
originally announced November 2017.
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Band Topology and Dichroic Signature of Bismuth
Authors:
Guang Bian,
Tay-Rong Chang,
Xiaoxiong Wang,
Hsin Lin,
T. Miller,
T. -C. Chiang
Abstract:
Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi. To…
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Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it can transform into the topological phase by alloying with Sb. However, recent high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements strongly suggested a topological band structure in pure Bi. To address this issue, we study the band structure of Bi and Sb films by ARPES and first-principles calculations. By tuning tight binding parameters, we show that Bi quantum films in topologically trivial and nontrivial phases response differently to surface perturbations. Therefore, we establish an experimental route for detecting the band topology of Bi by spectroscopic methods. In addition, our circular dichroic photoemission illuminates the rich surface states and complex spin texture of the Bi(111) surface.
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Submitted 2 October, 2017;
originally announced October 2017.
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Engineering Multiple Topological Phases in Nanoscale Van der Waals Heterostructures: Realisation of $α$-Antimonene
Authors:
Tobias Märkl,
Pawel J. Kowalczyk,
Maxime Le Ster,
Ishan Vardhan Mahajan,
Harry Pirie,
Zuned Ahmed,
Guang Bian,
Xiaoxiong Wang,
Tai-Chang Chiang,
Simon Anthony Brown
Abstract:
Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with topologically interesting states. Here we show that it is possible to create such heterostructures with multiple topological phases in a single nanoscale island. We discuss their growth within the framework of diffusion-li…
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Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with topologically interesting states. Here we show that it is possible to create such heterostructures with multiple topological phases in a single nanoscale island. We discuss their growth within the framework of diffusion-limited aggregation, the formation of moiré patterns due to the differing crystallographies of the materials comprising the heterostructure, and the potential to engineer both the electronic structure as well as local variations of topological order. In particular we show that it is possible to build islands which include both the hexagonal $β$- and rectangular $α$-forms of antimonene, on top of the topological insulator $α$-bismuthene. This is the first experimental realisation of $α$-antimonene, and we show that it is a topologically non-trivial material in the quantum spin Hall class.
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Submitted 27 August, 2017;
originally announced August 2017.
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Photoemission Circular Dichroism and Spin Polarization of the Topological Surface States in Ultrathin Bi2Te3 Films
Authors:
C. -Z. Xu,
Y. Liu,
R. Yukawa,
L. -X. Zhang,
I. Matsuda,
T. Miller,
T. -C. Chiang
Abstract:
Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit)…
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Circular dichroism (CD) observed by photoemission, being sensitive to the orbital and spin angular momenta of the electronic states, is a powerful probe of the nontrivial surface states of topological insulators, but the experimental results thus far have eluded a comprehensive description. We report a study of Bi2Te3 films with thicknesses ranging from one quintuple layer (two-dimensional limit) to twelve layers (bulk limit) over a wide range of incident photon energy. The data show complex variations in magnitude and sign reversals, which are nevertheless well described by a theoretical calculation including all three photoemission mechanisms: dipole transition, surface photoemission, and spin-orbit coupling. The results establish the nontrivial connection between the spin-orbit texture and CD.
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Submitted 26 May, 2017;
originally announced May 2017.
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Elemental topological Dirac semimetal: α-Sn on InSb(111)
Authors:
Cai-Zhi Xu,
Yang-Hao Chan,
Yige Chen,
Peng Chen,
Xiaoxiong Wang,
Catherine Dejoie,
Man-Hong Wong,
Joseph Andrew Hlevyack,
Hye** Ryu,
Hae-Young Kee,
Nobumichi Tamura,
Mei-Yin Chou,
Zahid Hussain,
Sung-Kwan Mo,
Tai-Chang Chiang
Abstract:
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy (ARPES), we have observed such bulk Dirac cones in ep…
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Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitions. A quintessential feature of TDSs is 3D Dirac fermions associated with bulk electronic states near the Fermi level. Using angle-resolved photoemission spectroscopy (ARPES), we have observed such bulk Dirac cones in epitaxially-grown α-Sn films on InSb(111), the first such TDS system realized in an elemental form. First-principles calculations confirm that epitaxial strain is key to the formation of the TDS phase. A phase diagram is established that connects the 3D TDS phase through a singular point of a zero-gap semimetal phase to a topological insulator (TI) phase. The nature of the Dirac cone crosses over from 3D to 2D as the film thickness is reduced.
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Submitted 21 March, 2017;
originally announced March 2017.
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Dirac fermions in borophene
Authors:
Baojie Feng,
Osamu Sugino,
Ro-Ya Liu,
** Zhang,
Ryu Yukawa,
Mitsuaki Kawamura,
Takushi Iimori,
Howon Kim,
Yukio Hasegawa,
Hui Li,
Lan Chen,
Kehui Wu,
Hiroshi Kumigashira,
Fumio Komori,
Tai-Chang Chiang,
Sheng Meng,
Iwao Matsuda
Abstract:
Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) su…
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Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest and spurred a broad search for new Dirac materials especially in monolayer structures. We present a detailed investigation of the β12 boron sheet, which is a borophene structure that can form spontaneously on a Ag(111) surface. Our tight-binding analysis revealed that the lattice of the β12-sheet could be decomposed into two triangular sublattices in a way similar to that for a honeycomb lattice, thereby hosting Dirac cones. Furthermore, each Dirac cone could be split by introducing periodic perturbations representing overlayer-substrate interactions. These unusual electronic structures were confirmed by angle-resolved photoemission spectroscopy and validated by first-principles calculations. Our results suggest monolayer boron as a new platform for realizing novel high-speed low-dissipation devices.
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Submitted 2 February, 2017;
originally announced February 2017.
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A One-Step Model of Photoemission from Single Crystal Surfaces
Authors:
Siddharth Karkare,
Weishi Wan,
Jun Feng,
Tai C. Chiang,
Howard A. Padmore
Abstract:
In this paper, we present a 3-D one step photoemission model that can be used to calculate the quantum efficiency and momentum distributions of electrons photoemitted from ordered single crystal surfaces close to the photoemission threshold. Using Ag(111) as an example, we show that the model can not only calculate the quantum efficiency from the surface state accurately without using any ad hoc p…
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In this paper, we present a 3-D one step photoemission model that can be used to calculate the quantum efficiency and momentum distributions of electrons photoemitted from ordered single crystal surfaces close to the photoemission threshold. Using Ag(111) as an example, we show that the model can not only calculate the quantum efficiency from the surface state accurately without using any ad hoc parameters, but also provides a theoretical quantitative explanation of the vectorial photoelectric effect. This model in conjunction with other band structure and wave function calculation techniques can be effectively used to screen single crystal photoemitters for use as electron sources for particle accelerator and ultrafast electron diffraction applications.
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Submitted 22 December, 2016;
originally announced December 2016.
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Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si
Authors:
Baojie Feng,
Botao Fu,
Shusuke Kasamatsu,
Suguru Ito,
Peng Cheng,
Cheng-Cheng Liu,
Ya Feng,
Shilong Wu,
Sanjoy K. Mahatha,
Polina Sheverdyaeva,
Paolo Moras,
Masashi Arita,
Osamu Sugino,
Tai-Chang Chiang,
Kenya Shimada,
Koji Miyamoto,
Taichi Okuda,
Kehui Wu,
Lan Chen,
Yugui Yao,
Iwao Matsuda
Abstract:
Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, Zr…
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Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a new platform to study the novel physical properties in two-dimensional Dirac materials and provide new opportunities to realize high-speed low-dissipation devices.
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Submitted 17 August, 2017; v1 submitted 29 November, 2016;
originally announced November 2016.
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Signatures of exciton condensation in a transition metal dichalcogenide
Authors:
Anshul Kogar,
Melinda S. Rak,
Sean Vig,
Ali A. Husain,
Felix Flicker,
Young Il Joe,
Luc Venema,
Greg J. MacDougall,
Tai C. Chiang,
Eduardo Fradkin,
Jasper van Wezel,
Peter Abbamonte
Abstract:
Bose condensation has shaped our understanding of macroscopic quantum phenomena, having been realized in superconductors, atomic gases, and liquid helium. Excitons are bosons that have been predicted to condense into either a superfluid or an insulating electronic crystal. Using the recently developed momentum-resolved electron energy-loss spectroscopy (M-EELS), we study electronic collective mode…
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Bose condensation has shaped our understanding of macroscopic quantum phenomena, having been realized in superconductors, atomic gases, and liquid helium. Excitons are bosons that have been predicted to condense into either a superfluid or an insulating electronic crystal. Using the recently developed momentum-resolved electron energy-loss spectroscopy (M-EELS), we study electronic collective modes in the transition metal dichalcogenide semimetal, 1T-TiSe$_2$. Near the phase transition temperature, T$_c$ = 190 K, the energy of the electronic mode falls to zero at nonzero momentum, indicating dynamical slowing down of plasma fluctuations and crystallization of the valence electrons into an exciton condensate. Our study provides compelling evidence for exciton condensation in a three-dimensional solid and establishes M-EELS as a versatile technique sensitive to valence band excitations in quantum materials.
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Submitted 15 January, 2018; v1 submitted 13 November, 2016;
originally announced November 2016.
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Spin Texture in Type-II Weyl Semimetal WTe2
Authors:
Baojie Feng,
Yang-Hao Chan,
Ya Feng,
Ro-Ya Liu,
Mei-Yin Chou,
Kenta Kuroda,
Koichiro Yaji,
Ayumi Harasawa,
Paolo Moras,
Alexei Barinov,
Walid G. Malaeb,
Cedric Bareille,
Takeshi Kondo,
Shik Shin,
Fumio Komori,
Tai-Chang Chiang,
Youguo Shi,
Iwao Matsuda
Abstract:
We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reveal the existence of spin polarization of both the Fermi arc surface states and bulk Fermi pockets. Our results support WTe2 to be a type-II Weyl semimetal candidate and provide important information to understand its ext…
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We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reveal the existence of spin polarization of both the Fermi arc surface states and bulk Fermi pockets. Our results support WTe2 to be a type-II Weyl semimetal candidate and provide important information to understand its extremely large and nonsaturating magnetoresistance.
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Submitted 20 November, 2016; v1 submitted 31 May, 2016;
originally announced June 2016.
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Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
Authors:
S. Ito,
B. Feng,
M. Arita,
A. Takayama,
R. -Y. Liu,
T. Someya,
W. -C. Chen,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
K. Kobayashi,
T. -C. Chiang,
I. Matsuda
Abstract:
The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave…
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The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.
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Submitted 3 December, 2016; v1 submitted 11 May, 2016;
originally announced May 2016.
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Direct Transition Resonance in Atomically Uniform Topological Sb(111) Thin Films
Authors:
Guang Bian,
Caizhi Xu,
Tay-Rong Chang,
Xiaoxiong Wang,
Saavanth Velury,
Jie Ren,
Hao Zheng,
Horng-Tay Jeng,
T. Miller,
M. Zahid Hasan,
T. -C. Chiang
Abstract:
Atomically uniform Sb(111) films are fabricated by the method of molecular beam epitaxy on an optimized Si(111) surface. Two dimensional quantum well states and topological surface states in these films are well resolved as measured by angle-resolved photoemission spectroscopy. We observe an evolution of direct transition resonances by varying the excitation photon energy (and thus the perpendicul…
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Atomically uniform Sb(111) films are fabricated by the method of molecular beam epitaxy on an optimized Si(111) surface. Two dimensional quantum well states and topological surface states in these films are well resolved as measured by angle-resolved photoemission spectroscopy. We observe an evolution of direct transition resonances by varying the excitation photon energy (and thus the perpendicular crystal momentum). The experimental results are reproduced in a comprehensive model calculation taking into account first-principles calculated initial states and time-reversed low-energy-electron-diffraction final states in the photoexcitation process. The resonant behavior illustrates that the topological surface states and the quantum well states are analytically connected in momentum space in all three dimensions.
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Submitted 7 November, 2015;
originally announced November 2015.
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Engineering electronic structure of a 2D topological insulator Bi(111) bilayer on Sb nanofilms by quantum confinement effect
Authors:
Guang Bian,
Z. F. Wang,
Xiaoxiong Wang,
Caizhi Xu,
Su-Yang Xu,
T. Miller,
M. Zahid Hasan,
Feng Liu,
T. -C. Chiang
Abstract:
We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron…
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We report on fabrication of a two-dimensional topological insulator-Bi(111) bilayer on Sb nanofilms via a sequential molecular beam epitaxy (MBE) growth technique. Our angle-resolved photoemission measurements demonstrate the evolution of the electronic band structure of the heterostructure as a function of the film thickness and reveal the existence of a two-dimensional spinful massless electron gas within the top Bi bilayer. Interestingly, Our first-principles calculation extrapolating the observed band structure shows that, by tuning down the thickness of the supporting Sb films into the quantum dimension regime, a pair of isolated topological edge states emerges in a partial energy gap at 0.32 eV above the Fermi level as a consequence of quantum confinement effect. Our results and methodology of fabricating nanoscale heterostructures establish the Bi bilayer/Sb heterostructure as a platform of great potential for both ultralow-energy-cost electronics and surface-based spintronics.
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Submitted 7 November, 2015;
originally announced November 2015.
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Surface collective modes in the topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$
Authors:
A. Kogar,
S. Vig,
A. Thaler,
M. H. Wong,
Y. Xiao,
D. Reig-i-Plessis,
G. Y. Cho,
T. Valla,
Z. Pan,
J. Schneeloch,
R. Zhong,
G. Gu,
T. L. Hughes,
G. J. MacDougall,
T. -C. Chiang,
P. Abbamonte
Abstract:
We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$. Our goal was to identify the "spin plasmon" predicted by Raghu and co-workers [S. Raghu, et al., Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a su…
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We used low-energy, momentum-resolved inelastic electron scattering to study surface collective modes of the three-dimensional topological insulators Bi$_2$Se$_3$ and Bi$_{0.5}$Sb$_{1.5}$Te$_{3-x}$Se$_{x}$. Our goal was to identify the "spin plasmon" predicted by Raghu and co-workers [S. Raghu, et al., Phys. Rev. Lett. 104, 116401 (2010)]. Instead, we found that the primary collective mode is a surface plasmon arising from the bulk, free carrers in these materials. This excitation dominates the spectral weight in the bosonic function of the surface, $χ"(\textbf{q},ω)$, at THz energy scales, and is the most likely origin of a quasiparticle dispersion kink observed in previous photoemission experiments. Our study suggests that the spin plasmon may mix with this other surface mode, calling for a more nuanced understanding of optical experiments in which the spin plasmon is reported to play a role.
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Submitted 16 December, 2015; v1 submitted 14 May, 2015;
originally announced May 2015.
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Emergence of charge density wave domain walls above the superconducting dome in TiSe2
Authors:
Y. I. Joe,
X. M. Chen,
P. Ghaemi,
K. D. Finkelstein,
G. A. de la Peña,
Y. Gan,
J. C. T. Lee,
S. Yuan,
J. Geck,
G. J. MacDougall,
T. C. Chiang,
S. L. Cooper,
E. Fradkin,
P. Abbamonte
Abstract:
Superconductivity (SC) in so-called "unconventional superconductors" is nearly always found in the vicinity of another ordered state, such as antiferromagnetism, charge density wave (CDW), or stripe order. This suggests a fundamental connection between SC and fluctuations in some other order parameter. To better understand this connection, we used high-pressure x-ray scattering to directly study t…
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Superconductivity (SC) in so-called "unconventional superconductors" is nearly always found in the vicinity of another ordered state, such as antiferromagnetism, charge density wave (CDW), or stripe order. This suggests a fundamental connection between SC and fluctuations in some other order parameter. To better understand this connection, we used high-pressure x-ray scattering to directly study the CDW order in the layered dichalcogenide TiSe2, which was previously shown to exhibit SC when the CDW is suppressed by pressure [1] or intercalation of Cu atoms [2]. We succeeded in suppressing the CDW fully to zero temperature, establishing for the first time the existence of a quantum critical point (QCP) at Pc = 5.1 +/- 0.2 GPa, which is more than 1 GPa beyond the end of the SC region. Unexpectedly, at P = 3 GPa we observed a reentrant, weakly first order, incommensurate phase, indicating the presence of a Lifshitz tricritical point somewhere above the superconducting dome. Our study suggests that SC in TiSe2 may not be connected to the QCP itself, but to the formation of CDW domain walls.
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Submitted 16 September, 2013;
originally announced September 2013.
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Effect of transport-induced charge inhomogeneity on point-contact Andreev reflection spectra at ferromagnet-superconductor interfaces
Authors:
Ya-Fen Hsu,
Tian-Wei Chiang,
Guang-Yu Guo,
Shang-Fan Lee,
Jun-Jih Liang
Abstract:
We investigate the transport properties of a ferromagnet-superconductor interface within the framework of a modified three-dimensional Blonder-Tinkham-Klapwijk formalism. In particular, we propose that charge inhomogeneity forms via two unique transport mechanisms, namely, evanescent Andreev reflection and evanescent quasiparticle transmission. Furthermore, we take into account the influence of ch…
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We investigate the transport properties of a ferromagnet-superconductor interface within the framework of a modified three-dimensional Blonder-Tinkham-Klapwijk formalism. In particular, we propose that charge inhomogeneity forms via two unique transport mechanisms, namely, evanescent Andreev reflection and evanescent quasiparticle transmission. Furthermore, we take into account the influence of charge inhomogeneity on the interfacial barrier potential and calculate the conductance as a function of bias voltage. Point-contact Andreev reflection (PCAR) spectra often show dip structures, large zero-bias conductance enhancement, and additional zero-bias conductance peak. Our results indicate that transport-induced charge inhomogeneity could be a source of all these anomalous characteristics of the PCAR spectra.
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Submitted 6 June, 2012;
originally announced June 2012.
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Quantum Melting of the Charge Density Wave State in 1T-TiSe2
Authors:
C. S. Snow,
J. F. Karpus,
S. L. Cooper,
T. E. Kidd,
T. -C. Chiang
Abstract:
We report a Raman scattering study of low-temperature, pressure-induced melting of the CDW phase of 1T-TiSe2. Our Raman scattering measurements reveal that the collapse of the CDW state occurs in three stages: (i) For P<5 kbar, the pressure dependence of the CDW amplitude mode energies and intensities are indicative of a ``crystalline'' CDW regime; (ii) for 5 < P < 25 kbar, there is a decrease i…
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We report a Raman scattering study of low-temperature, pressure-induced melting of the CDW phase of 1T-TiSe2. Our Raman scattering measurements reveal that the collapse of the CDW state occurs in three stages: (i) For P<5 kbar, the pressure dependence of the CDW amplitude mode energies and intensities are indicative of a ``crystalline'' CDW regime; (ii) for 5 < P < 25 kbar, there is a decrease in the CDW amplitude mode energies and intensities with increasing pressure that suggests a regime in which the CDW softens, and may decouple from the lattice; and (iii) for P>25 kbar, the absence of amplitude modes reveals a melted CDW regime.
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Submitted 11 April, 2003;
originally announced April 2003.