Physical properties and electronic structure of the two-gap superconductor V$_{2}$Ga$_{5}$
Authors:
P. -Y. Cheng,
Mohamed Oudah,
T. -L. Hung,
C. -E. Hsu,
C. -C. Chang,
J. -Y. Haung,
T. -C. Liu,
C. -M. Cheng,
M. -N. Ou,
W. -T. Chen,
L. Z. Deng,
C. -C. Lee,
Y. -Y. Chen,
C. -N. Kuo,
C. -S. Lue,
Janna Machts,
Kenji M. Kojima,
Alannah M. Hallas,
C. -L. Huang
Abstract:
We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrah…
▽ More
We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrahigh quality of the single crystal studied. The resistivity measurements under high pressure reveal that the Tsc is suppressed linearly with pressure and reaches absolute zero around 20 GPa. Specific heat and muon spin relaxation measurements both indicate that the two-gap s-wave model best describes the superconductivity of V2Ga5. The spectra obtained from angle-resolved photoemission spectroscopy measurements suggest that two superconducting gaps open at the Fermi surface around the Z and Γ points. These results are verified by first-principles band structure calculations. We therefore conclude that V2Ga5 is a phonon-mediated two-gap s-wave superconductor
△ Less
Submitted 6 May, 2024;
originally announced May 2024.
MgGa2O4 spinel barrier for magnetic tunnel junctions: coherent tunneling and low barrier height
Authors:
Hiroaki Sukegawa,
Yushi Kato,
Mohamed Belmoubarik,
P. -H. Cheng,
Tadaomi Daibou,
Naoharu Shimomura,
Yuuzo Kamiguchi,
Junichi Ito,
Hiroaki Yoda,
Tadakatsu Ohkubo,
Seiji Mitani,
Kazuhiro Hono
Abstract:
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with…
▽ More
Epitaxial Fe/magnesium gallium spinel oxide (MgGa2O4)/Fe(001) magnetic tunnel junctions (MTJs) were fabricated by magnetron sputtering. Tunnel magnetoresistance (TMR) ratio up to 121% at room temperature (196% at 4 K) was observed, suggesting a TMR enhancement by the coherent tunneling effect in the MgGa2O4 barrier. The MgGa2O4 layer had a spinel structure and it showed good lattice matching with the Fe layers owing to slight tetragonal lattice distortion of MgGa2O4. Barrier thickness dependence of the tunneling resistance and current-voltage characteristics revealed that the barrier height of the MgGa2O4 barrier is much lower than that in an MgAl2O4 barrier. This study demonstrates the potential of Ga-based spinel oxides for MTJ barriers having a large TMR ratio at a low resistance area product.
△ Less
Submitted 11 November, 2016;
originally announced November 2016.
