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Quantum spin driven Yu-Shiba-Rusinov multiplets and fermion-parity-preserving phase transition in K$_3$C$_{60}$
Authors:
Shu-Ze Wang,
Xue-Qing Yu,
Li-Xuan Wei,
Li Wang,
Qiang-Jun Cheng,
Kun Peng,
Fang-Jun Cheng,
Yu Liu,
Fang-Sen Li,
Xu-Cun Ma,
Qi-Kun Xue,
Can-Li Song
Abstract:
Magnetic impurities in superconductors are of increasing interest due to emergent Yu-Shiba-Rusinov (YSR) states and Majorana zero modes for fault-tolerant quantum computation. However, a direct relationship between the YSR multiple states and magnetic anisotropy splitting of quantum impurity spins remains poorly characterized. By using scanning tunneling microscopy, we resolve systematically indiv…
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Magnetic impurities in superconductors are of increasing interest due to emergent Yu-Shiba-Rusinov (YSR) states and Majorana zero modes for fault-tolerant quantum computation. However, a direct relationship between the YSR multiple states and magnetic anisotropy splitting of quantum impurity spins remains poorly characterized. By using scanning tunneling microscopy, we resolve systematically individual transition-metal (Fe, Cr and Ni) impurities induced YSR multiplets as well as their Zeeman effects in K$_3$C$_{60}$ superconductor. The YSR multiplets show identical $d$ orbital-like wave functions that are symmetry-mismatched to the threefold K$_3$C$_{60}$(111) host surface, breaking point-group symmetries of the spatial distribution of YSR bound states in real space. Remarkably, we identify an unprecedented fermion-parity-preserving quantum phase transition between ground states with opposite signs of the uniaxial magnetic anisotropy that can be manipulated by an external magnetic field. These findings can be readily understood in terms of anisotropy splitting of quantum impurity spins, and thus elucidate the intricate interplay between the magnetic anisotropy and YSR multiplets.
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Submitted 22 March, 2024;
originally announced March 2024.
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Chiral charge density wave and backscattering-immune orbital texture in monolayer 1T-TiTe2
Authors:
Mingqiang Ren,
Fangjun Cheng,
Yufei Zhao,
Mingqiang Gu,
Qiangjun Cheng,
Binghai Yan,
Qihang Liu,
Xucun Ma,
Qikun Xue,
Can-Li Song
Abstract:
Non-trivial electronic states are attracting intense attention in low-dimensional physics. Though chirality has been identified in charge states with a scalar order parameter, its intertwining with charge density waves (CDW), film thickness and the impact on the electronic behaviors remain less well understood. Here, using scanning tunneling microscopy, we report a 2 x 2 chiral CDW as well as a st…
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Non-trivial electronic states are attracting intense attention in low-dimensional physics. Though chirality has been identified in charge states with a scalar order parameter, its intertwining with charge density waves (CDW), film thickness and the impact on the electronic behaviors remain less well understood. Here, using scanning tunneling microscopy, we report a 2 x 2 chiral CDW as well as a strong suppression of the Te-5p hole-band backscattering in monolayer 1T-TiTe2. These exotic characters vanish in bilayer TiTe2 with a non-CDW state. Theoretical calculations approve that chirality comes from a helical stacking of the triple-q CDW components and therefore can persist at the two-dimensional limit. Furthermore, the chirality renders the Te-5p bands an unconventional orbital texture that prohibits electron backscattering. Our study establishes TiTe2 as a promising playground for manipulating the chiral ground states at the monolayer limit and provides a novel path to engineer electronic properties from an orbital degree.
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Submitted 31 October, 2023;
originally announced October 2023.
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Extreme Spontaneous Deformations of Active Crystals
Authors:
Xia-qing Shi,
Fu Cheng,
Hugues Chaté
Abstract:
We demonstrate that two-dimensional crystals made of active particles can experience extremely large spontaneous deformations without melting. Using particles mostly interacting via pairwise repulsive forces, we show that such active crystals maintain long-range bond order and algebraically-decaying positional order, but with an exponent $η$ not limited by the $\tfrac{1}{3}$ bound given by the (eq…
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We demonstrate that two-dimensional crystals made of active particles can experience extremely large spontaneous deformations without melting. Using particles mostly interacting via pairwise repulsive forces, we show that such active crystals maintain long-range bond order and algebraically-decaying positional order, but with an exponent $η$ not limited by the $\tfrac{1}{3}$ bound given by the (equilibrium) KTHNY theory. We rationalize our findings using linear elastic theory and show the existence of two well-defined effective temperatures quantifying respectively large-scale deformations and bond-order fluctuations. The root of these phenomena lies in the sole time-persistence of the intrinsic axes of particles, and they should thus be observed in many different situations.
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Submitted 8 September, 2023;
originally announced September 2023.
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Discovery of smectic charge and pair-density-wave orders in topological monolayer 1T$^\prime$-MoTe$_2$
Authors:
Li-Xuan Wei,
Peng-Cheng Xiao,
Fangsen Li,
Li Wang,
Bo-Yuan Deng,
Fang-Jun Cheng,
Fa-Wei Zheng,
Ning Hao,
** Zhang,
Xu-Cun Ma,
Qi-Kun Xue,
Can-Li Song
Abstract:
Electronic liquid-crystal phases are observed in numerous strongly-correlated systems including high-temperature superconductors. However, identifying these exotic phases and understanding their interplay with superconductivity in topological materials remain challenging. Here we employ a cryogenic scanning tunneling microscopy to discover a smectic (stripe) charge order (CO) and a primary pair-de…
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Electronic liquid-crystal phases are observed in numerous strongly-correlated systems including high-temperature superconductors. However, identifying these exotic phases and understanding their interplay with superconductivity in topological materials remain challenging. Here we employ a cryogenic scanning tunneling microscopy to discover a smectic (stripe) charge order (CO) and a primary pair-density-wave (PDW) in topological monolayer 1T$^\prime$-MoTe$_2$. The two orders are spatially modulated unidirectionally at the same wavevector, but have a marked spatial phase difference of about 2$π$/5. Importantly, the primary PDW state features a two-gap superconductivity below the transition temperature of 6.0 K and induces another unique particle-hole-symmetric CO at twice the PDW wavevector. Combining these results and our density functional calculations, we reveal that the two smectic orders are primarily driven by nesting behaviors between electron and hole pockets. Our findings establish monolayer 1T$^\prime$-MoTe$_2$ as a topological paradigm for exploring electronic smecticity, which intertwines with multiple preexisting symmetry-breaking states.
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Submitted 5 April, 2024; v1 submitted 21 August, 2023;
originally announced August 2023.
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New vision of convection induced freckle formation theory in Nickel-based superalloys by electron microscopy
Authors:
Shuai Wang,
Yuliang Jia,
Yongzhe Wang,
Yongjia Zhang,
Lan Ma,
Feng Cheng,
Yi Zeng,
Xu Shen,
Yingliu Du,
Binghui Ge
Abstract:
Freckles, one of the common defects in blades used in heavy duty gas turbines, hugely deteriorates blades mechanical properties and liability under service conditions. Thermal-solutal convection theory is a widely adopted formation mechanism but few solid experimental evidences were reported. Here for the first time we systematically studied the microstructure of 117 grains in freckle chains from…
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Freckles, one of the common defects in blades used in heavy duty gas turbines, hugely deteriorates blades mechanical properties and liability under service conditions. Thermal-solutal convection theory is a widely adopted formation mechanism but few solid experimental evidences were reported. Here for the first time we systematically studied the microstructure of 117 grains in freckle chains from four different Nickel-based superalloys of either single crystal or directionally solidified alloys. The relationship between the internal stress and the misorientation throughout the freckle chains is studied by means of state-of-the-art electron microscopy. All results give new experimental proof to the theory of thermal-solutal convection, which is further supported by the fact that borides at the boundary are randomly orientated to alloys. Our results enrich the methodology of freckle study, providing a new sight of the formation mechanism of casting defects.
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Submitted 14 June, 2023;
originally announced June 2023.
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Evidence for Band Renormalizations in Strong-coupling Superconducting Alkali-fulleride Films
Authors:
J. S. Zhou,
R. Z. Xu,
X. Q. Yu,
F. J. Cheng,
W. X. Zhao,
X. Du,
S. Z. Wang,
Q. Q. Zhang,
X. Gu,
S. M. He,
Y. D. Li,
M. Q. Ren,
X. C. Ma,
Q. K. Xue,
Y. L. Chen,
C. L. Song,
L. X. Yang
Abstract:
There has been a long-standing debate about the mechanism of the unusual superconductivity in alkali-intercalated fulleride superconductors. In this work, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of superconducting K3C60 thin films. We observe a dispersive energy band crossing the Fermi level with an occupied bandwidth…
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There has been a long-standing debate about the mechanism of the unusual superconductivity in alkali-intercalated fulleride superconductors. In this work, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of superconducting K3C60 thin films. We observe a dispersive energy band crossing the Fermi level with an occupied bandwidth of about 130 meV. The measured band structure shows prominent quasiparticle kinks and a replica band involving high-energy Jahn-Teller active Hg(8) phonon mode, reflecting strong electron-phonon coupling in the system. The electron-phonon coupling constant is estimated to be about 1.2, which dominates the quasiparticle mass renormalization. Moreover, we observe an isotropic nodeless superconducting gap beyond the mean-field estimation. Both the large electron-phonon coupling constant and large reduced superconducting gap suggest a strong-coupling superconductivity in K3C60, while the electronic correlation effect is indicated by the observation of a waterfall-like band dispersion and the small bandwidth compared with the effective Coulomb interaction. Our results not only directly visualize the crucial band structure of superconducting fulleride but also provide important insights into the mechanism of the unusual superconductivity.
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Submitted 26 April, 2023;
originally announced April 2023.
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Direct observation of nodeless superconductivity and phonon modes in electron-doped copper oxide Sr$_{1-x}$Nd$_x$CuO$_2$
Authors:
Jia-Qi Fan,
Xue-Qing Yu,
Fang-Jun Cheng,
Heng Wang,
Ruifeng Wang,
Xiaobing Ma,
Xiao-Peng Hu,
Ding Zhang,
Xu-Cun Ma,
Qi-Kun Xue,
Can-Li Song
Abstract:
The microscopic understanding of high-temperature superconductivity in cuprates has been hindered by the apparent complexity of crystal structures in these materials. We used scanning tunneling microscopy and spectroscopy to study an electron-doped copper oxide compound Sr$_{1-x}$Nd$_x$CuO$_2$ that has only bare cations separating the CuO$_2$ planes and thus the simplest infinite-layer structure a…
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The microscopic understanding of high-temperature superconductivity in cuprates has been hindered by the apparent complexity of crystal structures in these materials. We used scanning tunneling microscopy and spectroscopy to study an electron-doped copper oxide compound Sr$_{1-x}$Nd$_x$CuO$_2$ that has only bare cations separating the CuO$_2$ planes and thus the simplest infinite-layer structure among all cuprate superconductors. Tunneling conductance spectra of the major CuO$_2$ planes in the superconducting state revealed direct evidence for a nodeless pairing gap, regardless of variation of its magnitude with the local do** of trivalent neodymium. Furthermore, three distinct bosonic modes are observed as multiple peak-dip-hump features outside the superconducting gaps and their respective energies depend little on the spatially varying gaps. Along with the bosonic modes with energies identical to those of the external, bending and stretching phonons of copper oxides, our findings indicate their origin from lattice vibrations rather than spin excitations.
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Submitted 3 May, 2022;
originally announced May 2022.
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Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO
Authors:
Hui Zhang,
Madisen Holbrook,
Fei Cheng,
Hyoungdo Nam,
Mengke Liu,
Chi-Ruei Pan,
Damien West,
Shengbai Zhang,
Mei-Yin Chou,
Chih-Kang Shih
Abstract:
The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), altho…
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The emergence of two-dimensional (2D) materials launched a fascinating frontier of flatland electronics. Most crystalline atomic layer materials are based on layered van der Waals materials with weak interlayer bonding, which naturally leads to thermodynamically stable monolayers. We report the synthesis of a 2D insulator comprised of a single atomic sheet of honeycomb structure BeO (h-BeO), although its bulk counterpart has a wurtzite structure. The h-BeO is grown by molecular beam epitaxy (MBE) on Ag(111) thin films that are conveniently grown on Si(111) wafers. Using scanning tunneling microscopy and spectroscopy (STM/S), the honeycomb BeO lattice constant is determined to be 2.65 angstrom with an insulating band gap of 6 eV. Our low energy electron diffraction (LEED) measurements indicate that the h-BeO forms a continuous layer with good crystallinity at the millimeter scale. Moiré pattern analysis shows the BeO honeycomb structure maintains long range phase coherence in atomic registry even across Ag steps. We find that the interaction between the h-BeO layer and the Ag(111) substrate is weak by using STS and complimentary density functional theory calculations. We not only demonstrate the feasibility of growing h-BeO monolayers by MBE, but also illustrate that the large-scale growth, weak substrate interactions, and long-range crystallinity make h-BeO an attractive candidate for future technological applications. More significantly, the ability to create a stable single crystalline atomic sheet without a bulk layered counterpart is an intriguing approach to tailoring novel 2D electronic materials.
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Submitted 20 August, 2020;
originally announced August 2020.
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Controllable crystal restructuring in MXene by electron irradiation
Authors:
H. Zhang,
T. Hu,
W. Sun,
M. M. Hu,
R. F. Cheng,
X. H. Wang
Abstract:
Recent decades have witnessed the breakthroughs in utilizing electron beams as the smallest tools to tailor materials. Whereas, the manipulation of atoms in a controllable manner by the electron beams is a long-time challenge due to the random nature of atom-knock-on. Here, we show that electron irradiation can controllably manipulate atoms in newly-developed MXene multilayers. The multilayers con…
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Recent decades have witnessed the breakthroughs in utilizing electron beams as the smallest tools to tailor materials. Whereas, the manipulation of atoms in a controllable manner by the electron beams is a long-time challenge due to the random nature of atom-knock-on. Here, we show that electron irradiation can controllably manipulate atoms in newly-developed MXene multilayers. The multilayers consist of many few-atom-thick transition metal carbide slabs that are terminated with hydroxyl and O functional groups on each slab. Upon electron irradiation, the H atoms of the hydroxyl are knocked off, creating cation traps surrounded by dangling O confined in a nano-sized slit. Simultaneously, the transition metal atoms partially struck away from the carbide slabs migrate into the cation traps periodically, resulting in crystal restructuring. Crystal restructuring is versatile for various MXenes and dramatically improves the electric conductivity and lessens the anisotropy, holding significant implications in engineering MXenes at the atomic scale.
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Submitted 27 April, 2019; v1 submitted 19 December, 2018;
originally announced December 2018.
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Single Crystalline Silver Films for Plasmonics: From Monolayer to Optically Thick Film
Authors:
Fei Cheng,
Chien-Ju Lee,
Junho Choi,
Chun-Yuan Wang,
Qiang Zhang,
Hui Zhang,
Shangjr Gwo,
Wen-Hao Chang,
Xiaoqin Li,
Chih-Kang Shih
Abstract:
Epitaxial growth of single crystalline noble metals on dielectric substrates has received tremendous attention recently due to their technological potentials as low loss plasmonic materials. Currently there are two different growth approaches, each with its strengths and weaknesses. One adopts a sophisticated molecular beam epitaxial procedure to grow atomically smooth epitaxial Ag films. However,…
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Epitaxial growth of single crystalline noble metals on dielectric substrates has received tremendous attention recently due to their technological potentials as low loss plasmonic materials. Currently there are two different growth approaches, each with its strengths and weaknesses. One adopts a sophisticated molecular beam epitaxial procedure to grow atomically smooth epitaxial Ag films. However, the procedure is rather slow and becomes impractical to grow films with thickness > 50 nm. Another approach adopts a growth process using rapid e-beam deposition which is capable of growing single crystalline Ag films in the thick regime (> 300 nm). However, the rapid growth procedure makes it difficult to control film thickness precisely, i.e., the method is not applicable to growing thin epitaxial films. Here we report a universal approach to grow atomically smooth epitaxial Ag films with precise thickness control from a few monolayers to the optically thick regime, overcoming the limitations of the two aforementioned methods. In addition, we develop an in-situ growth of aluminum oxide as the cap** layer which exhibits excellent properties protecting the epitaxial Ag films. The performance of the epitaxial Ag films as a function of the film thickness is investigated by directly measuring the propagation length of the surface plasmon polaritons (SPPs) as well as their device performance to support a waveguide plasmonic nanolaser in infrared incorporating an InGaAsP quantum well as the gain media.
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Submitted 17 August, 2018;
originally announced August 2018.
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Tailoring Semiconductor Lateral Multi-junctions for Giant Photoconductivity Enhancement
Authors:
Yutsung Tsai,
Zhaodong Chu,
Yimo Han,
Chih-Piao Chuu,
Di Wu,
Alex Johnson,
Fei Cheng,
Mei-Yin Chou,
David A. Muller,
Xiaoqin Li,
Keji Lai,
Chih-Kang Shih
Abstract:
Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct gro…
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Semiconductor heterostructures have played a critical role as the enabler for new science and technology. The emergence of transition metal dichalcogenides (TMDs) as atomically thin semiconductors has opened new frontiers in semiconductor heterostructures either by stacking different TMDs to form vertical heterojunctions or by stitching them laterally to form lateral heterojunctions via direct growth. In conventional semiconductor heterostructures, the design of multi-junctions is critical to achieve carrier confinement. Analogously, we report successful synthesis of monolayer WS2/WS2(1-x)Se2x/WS2 multi-junction lateral heterostructure via direct growth by chemical vapor deposition. The grown structures are characterized by Raman, photoluminescence, and annular dark-field scanning transmission electron microscopy to determine its lateral compositional profile. More importantly, using microwave impedance microscopy, we demonstrate that the local photoconductivity in the alloy region can be tailored and enhanced by 2 orders of magnitude over pure WS2. Finite element analysis confirms that this effect is due to the carrier diffusion and confinement into the alloy region. Our work exemplifies the technological potential of atomically thin lateral heterostructures in optoelectronic applications.
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Submitted 15 September, 2017;
originally announced September 2017.
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A magnetic topological semimetal Sr1-yMn1-zSb2 (y, z< 0.1)
Authors:
J. Y. Liu,
J. Hu,
Q. Zhang,
D. Graf,
H. B. Cao,
S. M. A. Radmanesh,
D. J. Adams,
Y. L. Zhu,
G. F. Cheng,
X. Liu,
W. A. Phelan,
J. Wei,
D. A. Tennant,
J. F. DiTusa,
I. Chiorescu,
L. Spinu,
Z. Q. Mao
Abstract:
Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semi…
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Weyl (WSMs) evolve from Dirac semimetals in the presence of broken time-reversal symmetry (TRS) or space-inversion symmetry. The WSM phases in TaAs-class materials and photonic crystals are due to the loss of space-inversion symmetry. For TRS-breaking WSMs, despite numerous theoretical and experimental efforts, few examples have been reported. In this Article, we report a new type of magnetic semimetal Sr1-yMn1-zSb2 (y,z<0.1) with nearly massless relativistic fermion behaviour (m*=0.04-0.05m0, where m0 is the free electron mass). This material exhibits a ferromagnetic order for 304K < T < 565K, but a canted antiferromagnetic order with a ferromagnetic component for T < 304K. The combination of relativistic fermion behaviour and ferromagnetism in Sr1-yMn1-zSb2 offers a rare opportunity to investigate the interplay between relativistic fermions and spontaneous TRS breaking.
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Submitted 10 August, 2017; v1 submitted 28 July, 2015;
originally announced July 2015.
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Artificial Gauge Field and Quantum Spin Hall States in a Conventional Two-dimensional Electron Gas
Authors:
Likun Shi,
Wenkai Lou,
F. Cheng,
Y. L. Zou,
Wen Yang,
Kai Chang
Abstract:
Based on the Born-Oppemheimer approximation, we divide total electron Hamiltonian in a spinorbit coupled system into slow orbital motion and fast interband transition process. We find that the fast motion induces a gauge field on slow orbital motion, perpendicular to electron momentum, inducing a topological phase. From this general designing principle, we present a theory for generating artificia…
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Based on the Born-Oppemheimer approximation, we divide total electron Hamiltonian in a spinorbit coupled system into slow orbital motion and fast interband transition process. We find that the fast motion induces a gauge field on slow orbital motion, perpendicular to electron momentum, inducing a topological phase. From this general designing principle, we present a theory for generating artificial gauge field and topological phase in a conventional two-dimensional electron gas embedded in parabolically graded GaAs/In$_{x}$Ga$_{1-x}$As/GaAs quantum wells with antidot lattices. By tuning the etching depth and period of antidot lattices, the band folding caused by superimposed potential leads to formation of minibands and band inversions between the neighboring subbands. The intersubband spin-orbit interaction opens considerably large nontrivial minigaps and leads to many pairs of helical edge states in these gaps.
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Submitted 24 April, 2015; v1 submitted 8 February, 2015;
originally announced February 2015.
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Landau levels and magneto-transport property of monolayer phosphorene
Authors:
X. Y. Zhou,
R. Zhang,
J. P. Sun,
Y. L. Zou,
D. Zhang,
W. K. Lou,
F. Cheng,
G. H. Zhou,
F. Zhai,
Kai Chang
Abstract:
We investigate theoretically the Landau levels (LLs) and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective \textbf{\emph{k$\cdot$p}} Hamiltonian and tight-binding (TB) model. At low field regime, we find that the LLs linearly depend both on the LL index $n$ and magnetic field $B$, which is similar with that of conventional semico…
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We investigate theoretically the Landau levels (LLs) and magneto-transport properties of phosphorene under a perpendicular magnetic field within the framework of the effective \textbf{\emph{k$\cdot$p}} Hamiltonian and tight-binding (TB) model. At low field regime, we find that the LLs linearly depend both on the LL index $n$ and magnetic field $B$, which is similar with that of conventional semiconductor two-dimensional electron gas. The Landau splittings of conduction and valence band are different and the wavefunctions corresponding to the LLs are strongly anisotropic due to the different anisotropic effective masses. An analytical expression for the LLs in low energy regime is obtained via solving the decoupled Hamiltonian, which agrees well with the numerical calculations. At high magnetic regime, a self-similar Hofstadter butterfly (HB) spectrum is obtained by using the TB model. The HB spectrum is consistent with the Landau level fan calculated from the effective \textbf{\emph{k$\cdot$p}} theory in a wide regime of magnetic fields. We find the LLs of phosphorene nanoribbon depend strongly on the ribbon orientation due to the anisotropic hop** parameters. The Hall and the longitudinal conductances (resistances) clearly reveal the structure of LLs.
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Submitted 24 April, 2015; v1 submitted 16 November, 2014;
originally announced November 2014.
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Electrical injection and detection of spin accumulation in Ge at room temperature
Authors:
A. T. Hanbicki,
S. -. F. Cheng,
R. Goswami,
O. M. J. van `t Erve,
B. T. Jonker
Abstract:
We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle measurements. We observe significant spin accumulation in the Ge up to room temperature. We observe precessional dephasing of the spin accumulation (the Hanle effect)…
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We inject spin-polarized electrons from an Fe/MgO tunnel barrier contact into n-type Ge(001) substrates with electron densities 2e16 < n < 8e17 cm-3, and electrically detect the resulting spin accumulation using three-terminal Hanle measurements. We observe significant spin accumulation in the Ge up to room temperature. We observe precessional dephasing of the spin accumulation (the Hanle effect) in an applied magnetic field for both forward and reverse bias (spin extraction and injection), and determine spin lifetimes and corresponding diffusion lengths for temperatures of 225 K to 300 K. The room temperature spin lifetime increases from τs = 50 ps to 123 ps with decreasing electron concentration, as expected from electron spin resonance work on bulk Ge. The measured spin resistance-area product is in good agreement with values predicted by theory for samples with carrier densities below the metal-insulator transition (MIT), but 100x larger for samples above the MIT. These data demonstrate that the spin accumulation measured occurs in the Ge, although dopant-derived interface or band states may enhance the measured spin voltage above the MIT. We estimate the polarization in the Ge to be on the order of 1%.
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Submitted 17 February, 2012;
originally announced February 2012.
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Abnormal magnetoresistance behavior in Nb thin film with rectangular antidot lattice
Authors:
W. J. Zhang,
S. K. He,
B. H. Li,
F. Cheng,
B. Xu,
Z. C. Wen,
W. H. Cao,
X. F. Han,
S. P. Zhao,
X. G. Qiu
Abstract:
Abnormal magnetoresistance behavior is found in superconducting Nb films perforated with rectangular arrays of antidots (holes). Generally magnetoresistance were always found to increase with increasing magnetic field. Here we observed a reversal of this behavior for particular in low temperature or current density. This phenomenon is due to a strong 'caging effect' which interstitial vortices are…
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Abnormal magnetoresistance behavior is found in superconducting Nb films perforated with rectangular arrays of antidots (holes). Generally magnetoresistance were always found to increase with increasing magnetic field. Here we observed a reversal of this behavior for particular in low temperature or current density. This phenomenon is due to a strong 'caging effect' which interstitial vortices are strongly trapped among pinned multivortices.
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Submitted 11 December, 2011; v1 submitted 16 November, 2011;
originally announced November 2011.
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Creating and modulating electronic states on noble metal surfaces: ultrathin Ag islands on Si(111)-7$\times$7 as a prototype
Authors:
Fang Cheng,
Xiong Zhou,
Yang He,
Qian Shen,
Hailing Liang,
Heng Li,
Jianlong Li,
Wei Ji,
Kai Wu
Abstract:
Various-thickness Ag islands were prepared on Si(111)-7$\times$7 using the one-step deposition at a high substrate temperature. An electronic state centered at -0.40$\sim$-0.15eV versus E$_{Fermi}$, detectable on the surface of the Ag islands thinner than 9 layers, was created by the electronic hybridization between Ag and Si at the Ag-Si interface. Scanning tunneling microscopy/spectroscopy and d…
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Various-thickness Ag islands were prepared on Si(111)-7$\times$7 using the one-step deposition at a high substrate temperature. An electronic state centered at -0.40$\sim$-0.15eV versus E$_{Fermi}$, detectable on the surface of the Ag islands thinner than 9 layers, was created by the electronic hybridization between Ag and Si at the Ag-Si interface. Scanning tunneling microscopy/spectroscopy and density functional theory revealed that the thickness of Ag islands determined the strength of the hybridization, leading to a modulation to the energy and intensity of the state on the surface.
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Submitted 5 February, 2011;
originally announced February 2011.
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Anisotropic transport in quantum wires embedded in (110) plane
Authors:
Fang Cheng,
Kai Chang
Abstract:
We investigate theoretically the effects of the Coulomb interaction and spin-orbit interactions (SOIs) on the anisotropic transport property of semiconductor quantum wires embedded in (110) plane. The anisotropy of the dc conductivity can be enhanced significantly by the Coulomb interaction for infinite-long quantum wires. But it is smeared out in quantum wires with finite length, while the ac c…
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We investigate theoretically the effects of the Coulomb interaction and spin-orbit interactions (SOIs) on the anisotropic transport property of semiconductor quantum wires embedded in (110) plane. The anisotropy of the dc conductivity can be enhanced significantly by the Coulomb interaction for infinite-long quantum wires. But it is smeared out in quantum wires with finite length, while the ac conductivity still shows anisotropic behavior, from which one can detect and distinguish the strengths of the Rashba SOI and Dresselhaus SOI.
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Submitted 2 November, 2009;
originally announced November 2009.
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Superconductivity induced by do** Pd in SrFe2-xPdxAs2
Authors:
Xiyu Zhu,
Fei Han Peng Cheng,
Bing Shen,
Hai-Hu Wen
Abstract:
By using solid state reaction method, we have synthesized the Pd-doped superconductor SrFe2-xPdxAs2. The systematic evolution of the lattice constants indicated that the Fe ions were successfully replaced by the Pd. By increasing the do** content of Pd, the antiferromagnetic state of the parent phase is suppressed and superconductivity is induced at a do** level of about x=0.05. Superconduct…
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By using solid state reaction method, we have synthesized the Pd-doped superconductor SrFe2-xPdxAs2. The systematic evolution of the lattice constants indicated that the Fe ions were successfully replaced by the Pd. By increasing the do** content of Pd, the antiferromagnetic state of the parent phase is suppressed and superconductivity is induced at a do** level of about x=0.05. Superconductivity with a maximum transition temperature Tc of about 8.7 K was achieved at the do** level of x = 0.15. The general phase diagram of Tc versus x was obtained and found to be similar to the case of Ni and Co do** to the Fe sites. Our results suggest that superconductivity can be easily induced in the FeAs family by adding electrons into the system, regardless with the transition metals of 3d or higher d-orbital electrons.
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Submitted 5 March, 2009; v1 submitted 2 March, 2009;
originally announced March 2009.
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Luttinger liquid coupled to Bose-Einstein condensation reservoirs
Authors:
Fang Cheng,
Guobao Zhu,
W. M. Liu,
Guanghui Zhou
Abstract:
We investigate the transport properties for a Luttinger liquid coupled to two identical Bose-Einstein condensation reservoirs. Using the approach of equation of motion for the Green function of the system, we find that the distance between the two resonant transmission probability peaks of the system is determined by the bosonic interaction strengths, and the sharpness of these resonant peaks is…
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We investigate the transport properties for a Luttinger liquid coupled to two identical Bose-Einstein condensation reservoirs. Using the approach of equation of motion for the Green function of the system, we find that the distance between the two resonant transmission probability peaks of the system is determined by the bosonic interaction strengths, and the sharpness of these resonant peaks is mainly determined by the Rabi frequency and phase of the Bose-Einstein condensation reservoir. These results for the proposed system involving a Luttinger liquid may build a bridge between the controling transport properties of cold atom in atom physics and the interacting boson transport in low-dimensional condensed matter physics.
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Submitted 2 June, 2008;
originally announced June 2008.
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Unification of bulk and interface electroresistive switching in oxide systems
Authors:
A. Ruotolo,
C. W. Leung,
C. Y. Lam,
W. F. Cheng,
K. H. Wong,
G. P. Pepe
Abstract:
We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearran…
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We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region.
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Submitted 1 June, 2008; v1 submitted 20 May, 2008;
originally announced May 2008.
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High-quality all-oxide Schottky junctions fabricated on heavily Nb-doped SrTiO3 substrates
Authors:
A. Ruotolo,
C. Y. Lam,
W. F. Cheng,
K. H. Wong,
C. W. Leung
Abstract:
We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconduct…
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We present a detailed investigation of the electrical properties of epitaxial La0.7Sr0.3MnO3/SrTi0.98Nb0.02O3 Schottky junctions. A fabrication process that allows reduction of the junction dimensions to current electronic device size has been employed. A heavily doped semiconductor has been used as a substrate in order to suppress its series resistance. We show that, unlike standard semiconductors, high-quality oxide-based Schottky junctions maintain a highly rectifying behavior for do** concentration of the semiconductor larger than 10^20 cm^(-3). Moreover, the junctions show hysteretic current-voltage characteristics.
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Submitted 14 June, 2007; v1 submitted 12 June, 2007;
originally announced June 2007.
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Magnon Dispersion and Anisotropies in SrCu$_2$(BO$_3$)$_2$
Authors:
Y. F. Cheng,
O. Cepas,
P. W. Leung,
T. Ziman
Abstract:
We study the dispersion of the magnons (triplet states) in SrCu$_2$(BO$_3$)$_2$ including all symmetry-allowed Dzyaloshinskii-Moriya interactions. We can reduce the complexity of the general Hamiltonian to a new simpler form by appropriate rotations of the spin operators. The resulting Hamiltonian is studied by both perturbation theory and exact numerical diagonalization on a 32-site cluster. We…
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We study the dispersion of the magnons (triplet states) in SrCu$_2$(BO$_3$)$_2$ including all symmetry-allowed Dzyaloshinskii-Moriya interactions. We can reduce the complexity of the general Hamiltonian to a new simpler form by appropriate rotations of the spin operators. The resulting Hamiltonian is studied by both perturbation theory and exact numerical diagonalization on a 32-site cluster. We argue that the dispersion is dominated by Dzyaloshinskii-Moriya interactions. We point out which combinations of these anisotropies affect the dispersion to linear-order, and extract their magnitudes.
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Submitted 20 April, 2007; v1 submitted 22 December, 2006;
originally announced December 2006.
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Transport properties for a Luttinger liquid wire with Rashba spin-orbit coupling and Zeeman splitting
Authors:
Fang Cheng,
Guanghui Zhou
Abstract:
We study the transport properties for a Luttinger-liquid (LL) quantum wire in the presence of both Rashba spin-orbit coupling (SOC) and a weak external in-plane magnetic field. The bosonized Hamiltonian of the system with an externally applied longitudinal electric field is established. And then the equations of motion for the bosonic phase fields are solved in the Fourier space, with which the…
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We study the transport properties for a Luttinger-liquid (LL) quantum wire in the presence of both Rashba spin-orbit coupling (SOC) and a weak external in-plane magnetic field. The bosonized Hamiltonian of the system with an externally applied longitudinal electric field is established. And then the equations of motion for the bosonic phase fields are solved in the Fourier space, with which the both charge and spin conductivities for the system are calculated analytically based on the linear response theory. Generally, the ac conductivity is an oscillation function of the strengths of electron-electron interaction, Rashba SOC and magnetic field, as well as the driving frequency and the measurement position in the wire. Through analysis with some examples it is demonstrated that the modification on the conductivity due to electron-electron interactions is more remarkable than that due to SOC, while the effects of SOC and Zeeman splitting on the conductivity are very similar. The spin-polarized conductivities for the system in the absence of Zeeman effect or SOC are also discussed, respectively. The ratio of the spin-polarized conductivities $σ_\uparrow/σ_\downarrow$ is dependent of the electron-electron interactions for the system without SOC, while it is independent of the electron-electron interactions for the system without Zeeman splitting.
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Submitted 20 March, 2007; v1 submitted 18 May, 2006;
originally announced May 2006.
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Resonant tunneling through a C60 molecular junction in liquid environment
Authors:
Lucia Grueter,
Fuyong Cheng,
Tero T. Heikkilä,
M. Teresa González,
Francois Diederich,
Christian Schoenenberger,
Michel Calame
Abstract:
We present electronic transport measurements through thiolated C$_{60}$ molecules in liquid environment. The molecules were placed within a mechanically controllable break junction using a single anchoring group per molecule. When varying the electrode separation of the C$_{60}$-modified junctions, we observed a peak in the conductance traces. The shape of the curves is strongly influenced by th…
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We present electronic transport measurements through thiolated C$_{60}$ molecules in liquid environment. The molecules were placed within a mechanically controllable break junction using a single anchoring group per molecule. When varying the electrode separation of the C$_{60}$-modified junctions, we observed a peak in the conductance traces. The shape of the curves is strongly influenced by the environment of the junction as shown by measurements in two distinct solvents. In the framework of a simple resonant tunneling model, we can extract the electronic tunneling rates governing the transport properties of the junctions.
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Submitted 12 July, 2005;
originally announced July 2005.
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Electron transport of a quantum wire containing a finite-size impurity under THz electromagnetic field illumination
Authors:
Guanghui Zhou,
Yuan Li,
Fang Cheng,
Wenfu Liao
Abstract:
We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit. Within the effective mass free-electron approximation, the scattering matrix for the system has been formulated by means of a time-dependent mode matching method.…
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We theoretically investigate the electron transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic field illumination in the ballistic limit. Within the effective mass free-electron approximation, the scattering matrix for the system has been formulated by means of a time-dependent mode matching method. Some interesting properties of the electron transmission for the system have been shown through a few groups of numerical examples. It is found that in the case of the comparative stronger field amplitude and the frequency resonant with the two lowest lateral energy levels in the impurity region, the field-induced intersubband transition dominates the process as if without the impurity. And there is a step-arising on the transmission as a function of the incident electron energy. However, in the case of lower field amplitude and the non-resonant frequencies both multiple symmetry Breit-type resonance peaks and asymmetry Fano-type dip lines appear in the electron transmission dependence on the incident energy due to the presence of the impurity and the external field. Therefore, within certain energy range the transmission as a function of the field frequency and/or field amplitude shows a rich structure. Moreover, the transmission dependence on the strength and size of the impurity is also discussed. It is suggested that these results mostly arise from the interplay effects between the impurity in a quantum wire and the applied field.
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Submitted 16 February, 2005;
originally announced February 2005.
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Absence of hole pairing in a simple t-J model on the Shastry-Sutherland lattice
Authors:
P. W. Leung,
Y. F. Cheng
Abstract:
The Shastry-Sutherland model is a two-dimensional frustrated spin model whose ground state is a spin gap state. We study this model doped with one and two holes on a 32-site lattice using exact diagonalization. When t'>0, we find that the diagonal dimer order that exists at half-filling are retained at these moderate do** levels. No other order is found to be favored on do**. The holes are s…
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The Shastry-Sutherland model is a two-dimensional frustrated spin model whose ground state is a spin gap state. We study this model doped with one and two holes on a 32-site lattice using exact diagonalization. When t'>0, we find that the diagonal dimer order that exists at half-filling are retained at these moderate do** levels. No other order is found to be favored on do**. The holes are strongly repulsive unless the hop** terms are unrealistically small. Therefore, the existence of a spin gap at half-filling does not guarantee hole-pairing in the present case.
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Submitted 5 July, 2004; v1 submitted 17 March, 2004;
originally announced March 2004.
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Transport spin polarization of Ni_xFe_{1-x}: electronic kinematics and band structure
Authors:
B. Nadgorny,
R. J. Soulen, Jr.,
M. S. Osofsky,
I. I. Mazin,
G. Laprade,
R. J. M. van de Veerdonk,
A. A. Smits,
S. F. Cheng,
E. F. Skelton,
S. B. Qadri
Abstract:
We present measurements of the transport spin polarization of Ni_xFe_{1-x} (0<x<1) using the recently-developed Point Contact Andreev Reflection technique, and compare them with our first principles calculations of the spin polarization for this system. Surpisingly, the measured spin polarization is almost composition-independent. The results clearly demonstrate that the sign of the transport sp…
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We present measurements of the transport spin polarization of Ni_xFe_{1-x} (0<x<1) using the recently-developed Point Contact Andreev Reflection technique, and compare them with our first principles calculations of the spin polarization for this system. Surpisingly, the measured spin polarization is almost composition-independent. The results clearly demonstrate that the sign of the transport spin polarization does not coincide with that of the difference of the densities of states at the Fermi level. Calculations indicate that the independence of the spin polarization of the composition is due to compensation of density of states and Fermi velocity in the s- and d- bands.
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Submitted 9 November, 1999; v1 submitted 7 May, 1999;
originally announced May 1999.
