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Physical properties and electronic structure of the two-gap superconductor V$_{2}$Ga$_{5}$
Authors:
P. -Y. Cheng,
Mohamed Oudah,
T. -L. Hung,
C. -E. Hsu,
C. -C. Chang,
J. -Y. Haung,
T. -C. Liu,
C. -M. Cheng,
M. -N. Ou,
W. -T. Chen,
L. Z. Deng,
C. -C. Lee,
Y. -Y. Chen,
C. -N. Kuo,
C. -S. Lue,
Janna Machts,
Kenji M. Kojima,
Alannah M. Hallas,
C. -L. Huang
Abstract:
We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrah…
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We present a thorough investigation of the physical properties and superconductivity of the binary intermetallic V2Ga5. Electrical resistivity and specific heat measurements show that V2Ga5 enters its superconducting state below Tsc = 3.5 K, with a critical field of Hc2,perp c(Hc2,para c) = 6.5(4.1) kOe. With H perp c, the peak effect was observed in resistivity measurements, indicating the ultrahigh quality of the single crystal studied. The resistivity measurements under high pressure reveal that the Tsc is suppressed linearly with pressure and reaches absolute zero around 20 GPa. Specific heat and muon spin relaxation measurements both indicate that the two-gap s-wave model best describes the superconductivity of V2Ga5. The spectra obtained from angle-resolved photoemission spectroscopy measurements suggest that two superconducting gaps open at the Fermi surface around the Z and Γ points. These results are verified by first-principles band structure calculations. We therefore conclude that V2Ga5 is a phonon-mediated two-gap s-wave superconductor
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Submitted 6 May, 2024;
originally announced May 2024.
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Oxygen on-site Coulomb energy in Pr$_{1.3-x}$La$_{0.7}$Ce$_x$CuO$_{4}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and its relation with Heisenberg exchange
Authors:
A. Chainani,
M. Horio,
C. -M. Cheng,
D. Malterre,
K. Sheshadri,
M. Kobayashi,
K. Horiba,
H. Kumigashira,
T. Mizokawa,
M. Oura,
M. Taguchi,
Y. Mori,
A. Takahashi,
T. Konno,
T. Ohgi,
H. Sato,
T. Adachi,
Y. Koike,
T. Mochiku,
K. Hirata,
S. Shin,
M. K. Wu,
A. Fujimori
Abstract:
We study the electronic structure of electron-doped Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$ (PLCCO ; $T_{c}$ = 27 K, x = 0.1) and hole-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212 ; $T_{c}$ = 90 K) cuprate superconductors using x-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (Res-PES). From Res-PES across the O K-edge and Cu L-edge, we identify the O 2p and Cu 3d partial…
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We study the electronic structure of electron-doped Pr$_{1.3-x}$La$_{0.7}$Ce$_{x}$CuO$_{4}$ (PLCCO ; $T_{c}$ = 27 K, x = 0.1) and hole-doped Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (Bi2212 ; $T_{c}$ = 90 K) cuprate superconductors using x-ray absorption spectroscopy (XAS) and resonant photoemission spectroscopy (Res-PES). From Res-PES across the O K-edge and Cu L-edge, we identify the O 2p and Cu 3d partial density of states (PDOS) and their correlation satellites which originate in two-hole Auger final states. Using the Cini-Sawatzky method, analysis of the experimental O 2p PDOS shows an oxygen on-site Coulomb energy for PLCCO to be $U_{p}$ = 3.3$\pm$0.5 eV and for Bi2212, $U_{p}$ = 5.6$\pm$0.5 eV, while the copper on-site Coulomb correlation energy, $U_{d}$ = 6.5$\pm$0.5 eV for Bi2212. The expression for the Heisenberg exchange interaction $J$ in terms of the electronic parameters $U_{d}$, $U_{p}$, charge-transfer energy $Δ$ and Cu-O hop** $t_{pd}$ obtained from a simple Cu$_2$O cluster model is used to carry out an optimization analysis consistent with $J$ known from scattering experiments. The analysis also provides the effective one band on-site Coulomb correlation energy $\tilde{U}$ and the effective hop** $\tilde{t}$. PLCCO and Bi2212 are shown to exhibit very similar values of $\tilde{U}$/$\tilde{t}$ $\sim$9-10, confirming the strongly correlated nature of the singlet ground state in the effective one-band model for both the materials.
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Submitted 10 March, 2023;
originally announced March 2023.
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An emergent quasi-2D metallic state derived from the Mott insulator framework
Authors:
P. -C. Chiang,
S. C. Lin,
C. -Y. Chiang,
C. -S. Ku,
S. W. Huang,
J. M. Lee,
Y. -D. Chuang,
H. J. Lin,
Y. F. Liao,
C. -M. Cheng,
S. C. Haw,
J. M. Chen,
Y. -H. Chu,
T. H. Do,
C. W. Luo,
J. -Y. Juang,
K. H. Wu,
Y. -W. Chang,
J. -C. Yang,
J. -Y. Lin
Abstract:
Recent quasi-2D systems with judicious exploitation of the atomic monolayer or few-layer architecture exhibit unprecedented physical properties that challenge the conventional wisdom on the condensed matter physics. Here we show that the infinite layer SrCuO2 (SCO), a topical cuprate Mott insulator in the bulk form, can manifest an unexpected metallic state in the quasi-2D limit when SCO is grown…
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Recent quasi-2D systems with judicious exploitation of the atomic monolayer or few-layer architecture exhibit unprecedented physical properties that challenge the conventional wisdom on the condensed matter physics. Here we show that the infinite layer SrCuO2 (SCO), a topical cuprate Mott insulator in the bulk form, can manifest an unexpected metallic state in the quasi-2D limit when SCO is grown on TiO2-terminated SrTiO3 (STO) substrates. Hard x-ray core-level photoemission spectra demonstrate a definitive Fermi level that resembles the hole doped metal. Soft x-ray absorption spectroscopy also reveals features analogous to those of a hole doped Mott insulator. Based on these results, we conclude that the hole do** does not occur at the interfaces between SCO and STO; instead, it comes from the transient layers between the chain type and the planar type structures within the SCO slab. The present work reveals a novel metallic state in the infinite layer SCO and invites further examination to elucidate the spatial extent of this state.
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Submitted 14 December, 2022;
originally announced December 2022.
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Dimensionality reduction and band quantization induced by potassium intercalation in 1$T$-HfTe$_2$
Authors:
Y. Nakata,
K. Sugawara,
A. Chainani,
K. Yamauchi,
K. Nakayama,
S. Souma,
P. -Y. Chuang,
C. -M. Cheng,
T. Oguchi,
K. Ueno,
T. Takahashi,
T. Sato
Abstract:
We have performed angle-resolved photoemission spectroscopy on transition-metal dichalcogenide 1$T$-HfTe$_2$ to elucidate the evolution of electronic states upon potassium (K) deposition. In pristine HfTe$_2$, an in-plane hole pocket and electron pockets are observed at the Brillouin-zone center and corner, respectively, indicating the semimetallic nature of bulk HfTe$_2$, with dispersion perpendi…
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We have performed angle-resolved photoemission spectroscopy on transition-metal dichalcogenide 1$T$-HfTe$_2$ to elucidate the evolution of electronic states upon potassium (K) deposition. In pristine HfTe$_2$, an in-plane hole pocket and electron pockets are observed at the Brillouin-zone center and corner, respectively, indicating the semimetallic nature of bulk HfTe$_2$, with dispersion perpendicular to the plane. In contrast, the band structure of heavily K-dosed HfTe$_2$ is obviously different from that of bulk, and resembles the band structure calculated for monolayer HfTe$_2$. It was also observed that lightly K-dosed HfTe$_2$ is characterized by quantized bands originating from bilayer and trilayer HfTe$_2$, indicative of staging. The results suggest that the dimensionality-crossover from 3D (dimensional) to 2D electronic states due to systematic K intercalation takes place via staging in a single sample. The study provides a new strategy for controlling the dimensionality and functionality of novel quantum materials.
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Submitted 10 July, 2019;
originally announced July 2019.
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Surface-state Coulomb repulsion accelerates a metal-insulator transition in topological semimetal nanofilms
Authors:
S. Ito,
M. Arita,
J. Haruyama,
B. Feng,
W. -C. Chen,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
G. Bian,
S. -J. Tang,
T. -C. Chiang,
O. Sugino,
F. Komori,
I. Matsuda
Abstract:
The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we…
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The emergence of quantization at the nanoscale, the quantum size effect (QSE), allows flexible control of matter and is a rich source of advanced functionalities. A QSE-induced transition into an insulating phase in semimetallic nanofilms was predicted for bismuth a half-century ago and has regained new interest with regard to its surface states exhibiting nontrivial electronic topology. Here, we reveal an unexpected mechanism of the transition by high-resolution angle-resolved photoelectron spectroscopy combined with theoretical calculations. Anomalous evolution and degeneracy of quantized energy levels indicate that increased Coulomb repulsion from the surface states deforms a quantum confinement potential with decreasing thickness. The potential deformation drastically modulates spatial distributions of quantized wave functions, which leads to acceleration of the transition even beyond the original QSE picture. This discovery establishes a complete picture of the long-discussed problem in bismuth and highlights the new class of size effects dominating nanoscale transport in systems with metallic surface states.
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Submitted 30 January, 2020; v1 submitted 16 March, 2019;
originally announced March 2019.
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Alkali-metal induced band structure deformation investigated by angle-resolved photoemission spectroscopy and first-principles calculations
Authors:
S. Ito,
B. Feng,
M. Arita,
T. Someya,
W. -C. Chen,
A. Takayama,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
I. Matsuda
Abstract:
Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron do**, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine…
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Alkali-metal adsorption on the surface of materials is widely used for in situ surface electron do**, particularly for observing unoccupied band structures by angle-resolved photoemission spectroscopy (ARPES). However, the effects of alkali-metal atoms on the resulting band structures have yet to be fully investigated, owing to difficulties in both experiments and calculations. Here, we combine ARPES measurements on cesium-adsorbed ultrathin bismuth films with first-principles calculations of the electronic charge densities and demonstrate a simple method to evaluate alkali-metal induced band deformation. We reveal that deformation of bismuth surface bands is directly correlated with vertical charge-density profiles at each electronic state of bismuth. In contrast, a change in the quantized bulk bands is well described by a conventional rigid-band-shift picture. We discuss these two aspects of the band deformation holistically, considering spatial distributions of the electronic states and cesium-bismuth hybridization, and provide a prescription for applying alkali-metal adsorption to a wide range of materials.
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Submitted 15 May, 2018; v1 submitted 30 November, 2017;
originally announced December 2017.
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Anisotropy in the thermal hysteresis of resistivity and charge density wave nature of single crystal SrFeO3-delta: X-ray absorption and photoemission studies
Authors:
S. H. Hsieh,
R. S. Solanki,
Y. F. Wang,
Y. C. Shao,
S. H. Lee,
C. H. Yao,
C. H. Du,
H. T. Wang,
J. W. Chiou,
Y. Y. Chin,
H. M. Tsai,
J. -L. Chen,
C. W. Pao,
C. -M. Cheng,
W. -C. Chen,
H. J. Lin,
J. F. Lee,
F. C. Chou,
W. F. Pong
Abstract:
The local electronic and atomic structures of the high-quality single crystal of SrFeO3-{delta} ({delta}~0.19) were studied using temperature-dependent x-ray absorption and valence-band photoemission spectroscopy (VB-PES) to investigate the origin of anisotropic resistivity in the ab-plane and along the c-axis close to the region of thermal hysteresis (near temperature for susceptibility maximum,…
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The local electronic and atomic structures of the high-quality single crystal of SrFeO3-{delta} ({delta}~0.19) were studied using temperature-dependent x-ray absorption and valence-band photoemission spectroscopy (VB-PES) to investigate the origin of anisotropic resistivity in the ab-plane and along the c-axis close to the region of thermal hysteresis (near temperature for susceptibility maximum, Tm~78 K). All experiments herein were conducted during warming and cooling processes. The Fe L3,2-edge X-ray linear dichrois results show that during cooling from room temperature to below the transition temperature, the unoccupied Fe 3d eg states remain in persistently out-of-plane 3d3z2-r2 orbitals. In contrast, in the warming process below the transition temperature, they change from 3d3z2-r2 to in-plane 3dx2-y2 orbitals. The nearest-neighbor (NN) Fe-O bond lengths also exhibit anisotropic behavior in the ab-plane and along the c-axis below Tm. The anisotropic NN Fe-O bond lengths and Debye-Waller factors stabilize the in-plane Fe 3dx2-y2 and out-of-plane 3d3z2-r2 orbitals during warming and cooling, respectively. Additionally, a VB-PES study further confirms that a relative band gap opens at low temperature in both the ab-plane and along the c-axis, providing the clear evidence of the charge-density-wave nature of SrFeO3-{delta} ({delta}~ 0.19) single crystal.
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Submitted 2 March, 2017;
originally announced March 2017.
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Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3
Authors:
Y. Hung Liu,
C. Wei Chong,
W. Chuan Chen,
J. C. A. Huang,
C. -Maw Cheng,
K. -Ding Tsuei,
Z. Li,
H. Qiu,
V. V. Marchenkov
Abstract:
(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb do** level has also been observed, where insulating phase could be achieved…
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(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb do** level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics.
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Submitted 25 November, 2016;
originally announced November 2016.
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Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
Authors:
S. Ito,
B. Feng,
M. Arita,
A. Takayama,
R. -Y. Liu,
T. Someya,
W. -C. Chen,
T. Iimori,
H. Namatame,
M. Taniguchi,
C. -M. Cheng,
S. -J. Tang,
F. Komori,
K. Kobayashi,
T. -C. Chiang,
I. Matsuda
Abstract:
The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave…
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The topology of pure Bi is controversial because of its very small ($\sim$10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14$-$202 bilayers Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to $\sim$10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.
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Submitted 3 December, 2016; v1 submitted 11 May, 2016;
originally announced May 2016.
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Spin-Imbalanced Quasi-Two-Dimensional Fermi Gases
Authors:
W. Ong,
C. -Y. Cheng,
I. Arakelyan,
J. E. Thomas
Abstract:
We measure the density profiles for a Fermi gas of $^6$Li containing $N_1$ spin-up atoms and $N_2$ spin-down atoms, confined in a quasi-two-dimensional geometry. The spatial profiles are measured as a function of spin-imbalance $N_2/N_1$ and interaction strength, which is controlled by means of a collisional (Feshbach) resonance. The measured cloud radii and central densities are in disagreement w…
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We measure the density profiles for a Fermi gas of $^6$Li containing $N_1$ spin-up atoms and $N_2$ spin-down atoms, confined in a quasi-two-dimensional geometry. The spatial profiles are measured as a function of spin-imbalance $N_2/N_1$ and interaction strength, which is controlled by means of a collisional (Feshbach) resonance. The measured cloud radii and central densities are in disagreement with mean-field Bardeen-Cooper-Schrieffer theory for a true two-dimensional system. We find that the data for normal-fluid mixtures are reasonably well fit by a simple two-dimensional polaron model of the free energy. Not predicted by the model is a phase transition to a spin-balanced central core, which is observed above a critical value of $N_2/N_1$. Our observations provide important benchmarks for predictions of the phase structure of quasi-two-dimensional Fermi gases.
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Submitted 23 December, 2014; v1 submitted 20 December, 2014;
originally announced December 2014.
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THz Generation and Detection on Dirac Fermions in Topological Insulators
Authors:
C. W. Luo,
C. C. Lee,
H. -J. Chen,
C. M. Tu,
S. A. Ku,
W. Y. Tzeng,
T. T. Yeh,
M. C. Chiang,
H. J. Wang,
W. C. Chu,
J. -Y. Lin,
K. H. Wu,
J. Y. Juang,
T. Kobayashi,
C. -M. Cheng,
C. -H. Chen,
K. -D. Tsuei,
H. Berger,
R. Sankar,
F. C. Chou,
H. D. Yang
Abstract:
This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption…
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This study shows that a terahertz (THz) wave can be generated from the (001) surface of cleaved Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ and Cu-doped Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ single crystals using 800 nm femtosecond pulses. The generated THz power is strongly dependent on the carrier concentration of the crystals. An examination of the dependence reveals the two-channel free carrier absorption to which Dirac fermions are indispensable. Dirac fermions in Bi$_{\textrm{2}}$Se$_{\textrm{3}}$ are significantly better absorbers of THz radiation than bulk carriers at room temperature. Moreover, the characteristics of THz emission confirm the existence of a recently proposed surface phonon branch that is normalized by Dirac fermions.
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Submitted 25 January, 2013;
originally announced February 2013.
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Phase Coexistence Near a Morphotropic Phase Boundary in Sm-doped BiFeO3 Films
Authors:
S. B. Emery,
C. -J. Cheng,
D. Kan,
F. J. Rueckert,
S. P. Alpay,
V. Nagarajan,
I. Takeuchi,
B. O. Wells
Abstract:
We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO3-like phase to a high-temperature orthorhombic phase. We also examine…
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We have investigated heteroepitaxial films of Sm-doped BiFeO3 with a Sm-concentration near a morphotropic phase boundary. Our high-resolution synchrotron X-ray diffraction, carried out in a temperature range of 25C to 700C, reveals substantial phase coexistence as one changes temperature to crossover from a low-temperature PbZrO3-like phase to a high-temperature orthorhombic phase. We also examine changes due to strain for films greater or less than the critical thickness for misfit dislocation formation. Particularly, we note that thicker films exhibit a substantial volume collapse associated with the structural transition that is suppressed in strained thin films.
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Submitted 15 June, 2010; v1 submitted 11 March, 2010;
originally announced March 2010.
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Complex phase mixture and domain superstructure across a new lead-free ferroelectric/anti-ferroelectric morphotropic phase boundary
Authors:
C. -J. Cheng,
S. H. Lim,
S. Fu**o,
W. R. McKenzie,
V. Nagarajan,
P. R. Munroe,
I. Takeuchi,
L. Salamanca-Riba,
I. B. Misirlioglu
Abstract:
We investigate the microstructural evolution in a ferroelectric to antiferroelectric phase transition at the morphotropic phase boundary in the Bi(1-x)SmxFeO3 system. Continuous Sm3+ substitution on the A-site induces short-range anti-parallel cation displacements as verified by the appearance of localized 1/4(110) weak spots in selected area electron diffraction patterns for 0.1<x<0.14 samples,…
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We investigate the microstructural evolution in a ferroelectric to antiferroelectric phase transition at the morphotropic phase boundary in the Bi(1-x)SmxFeO3 system. Continuous Sm3+ substitution on the A-site induces short-range anti-parallel cation displacements as verified by the appearance of localized 1/4(110) weak spots in selected area electron diffraction patterns for 0.1<x<0.14 samples, and thus onset of antiferroelectricity. Kinetic Monte Carlo simulations confirm that increasing the strength of the anti-parallel interactions (i.e. increasing x) induces a ferroelectric to antiferroelectric transition. For 0.14<x<0.2 antiphase oxygen octahedra tilts induce complete antiferroelectricity.
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Submitted 23 May, 2008; v1 submitted 5 March, 2008;
originally announced March 2008.
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Electronic structure of single-crystalline Mg(x)Al(1-x)B(2)
Authors:
S. Schuppler,
E. Pellegrin,
N. Nuecker,
T. Mizokawa,
M. Merz,
D. A. Arena,
J. Dvorak,
Y. U. Idzerda,
D. -J. Huang,
C. -F. Cheng,
K. -P. Bohnen,
R. Heid,
P. Schweiss,
Th. Wolf
Abstract:
Polarization-dependent x-ray absorption spectroscopy at the B 1s edge of single-crystalline Mg(x)Al(1-x)B(2) reveals a strongly anisotropic electronic structure near the Fermi energy. Comparing spectra for superconducting compounds (x=0.9, 1.0) with those for the non-superconductor x=0.0 gives direct evidence on the importance of an in-plane spectral feature crossing E_F for the superconducting…
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Polarization-dependent x-ray absorption spectroscopy at the B 1s edge of single-crystalline Mg(x)Al(1-x)B(2) reveals a strongly anisotropic electronic structure near the Fermi energy. Comparing spectra for superconducting compounds (x=0.9, 1.0) with those for the non-superconductor x=0.0 gives direct evidence on the importance of an in-plane spectral feature crossing E_F for the superconducting properties of the diborides. Good agreement is found with the projected B 2p density of states from LDA band structure calculations.
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Submitted 10 May, 2002;
originally announced May 2002.
