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Embracing Disorder in Quantum Materials Design
Authors:
A. R. Mazza,
J. Yan,
S. Middey,
J. S. Gardner,
A. -H. Chen,
M. Brahlek,
T. Z. Ward
Abstract:
Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, an…
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Many of the most exciting materials discoveries in fundamental condensed matter physics are made in systems hosting some degree of intrinsic disorder. While disorder has historically been regarded as something to be avoided in materials design, it is often of central importance to correlated and quantum materials. This is largely driven by the conceptual and theoretical ease to handle, predict, and understand highly uniform systems that exhibit complex interactions, symmetries and band structures. In this perspective, we highlight how flip** this paradigm has enabled exciting possibilities in the emerging field of high entropy oxide (HEO) quantum materials. These materials host high levels of cation or anion compositional disorder while maintaining unexpectedly uniform single crystal lattices. The diversity of atomic scale interactions of spin, charge, orbital, and lattice degrees of freedom are found to emerge into coherent properties on much larger length scales. Thus, altering the variance and magnitudes of the atomic scale properties through elemental selection can open new routes to tune global correlated phases such as magnetism, metal-insulator transitions, ferroelectricity, and even emergent topological responses. The strategy of embracing disorder in this way provides a much broader pallet from which functional states can be designed for next-generation microelectronic and quantum information systems.
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Submitted 28 February, 2024;
originally announced February 2024.
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"Smoking gun" signatures of topological milestones in trivial materials by measurement fine-tuning and data postselection
Authors:
S. M. Frolov,
P. Zhang,
B. Zhang,
Y. Jiang,
S. Byard,
S. R. Mudi,
J. Chen,
A. -H. Chen,
M. Hocevar,
M. Gupta,
C. Riggert,
V. S. Pribiag
Abstract:
Exploring the topology of electronic bands is a way to realize new states of matter with possible implications for information technology. Because bands cannot always be observed directly, a central question is how to tell that a topological regime has been achieved. Experiments are often guided by a prediction of a unique signal or a pattern, called "the smoking gun". Examples include peaks in co…
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Exploring the topology of electronic bands is a way to realize new states of matter with possible implications for information technology. Because bands cannot always be observed directly, a central question is how to tell that a topological regime has been achieved. Experiments are often guided by a prediction of a unique signal or a pattern, called "the smoking gun". Examples include peaks in conductivity, microwave resonances, and shifts in interference fringes. However, many condensed matter experiments are performed on relatively small, micron or nanometer-scale, specimens. These structures are in the so-called mesoscopic regime, between atomic and macroscopic physics, where phenomenology is particularly rich. In this paper, we demonstrate that the trivial effects of quantum confinement, quantum interference and charge dynamics in nanostructures can reproduce accepted smoking gun signatures of triplet supercurrents, Majorana modes, topological Josephson junctions and fractionalized particles. The examples we use correspond to milestones of topological quantum computing: qubit spectroscopy, fusion and braiding. None of the samples we use are in the topological regime. The smoking gun patterns are achieved by fine-tuning during data acquisition and by subsequent data selection to pick non-representative examples out of a fluid multitude of similar patterns that do not generally fit the "smoking gun" designation. Building on this insight, we discuss ways that experimentalists can rigorously delineate between topological and non-topological effects, and the effects of fine-tuning by deeper analysis of larger volumes of data.
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Submitted 17 September, 2023;
originally announced September 2023.
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Role of a cap** layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates
Authors:
A. -H. Chen,
C. P. Dempsey,
M. Pendharkar,
A. Sharma,
B. Zhang,
S. Tan,
L. Bellon,
S. M. Frolov,
C. J. Palmstrom,
E. Bellet-Amalric,
M. Hocevar
Abstract:
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they tend to undergo dewetting. This issue is mitigated by cap** the films with an amorphous layer. In this study, we examined the impact of different in…
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Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they tend to undergo dewetting. This issue is mitigated by cap** the films with an amorphous layer. In this study, we examined the impact of different in-situ fabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of cap**, we observed that the films remained smooth upon returning to room temperature and were epitaxial on InSb in the cubic Sn ($α$-Sn) phase. However, we noted a correlation between alumina cap** with an electron beam evaporator and an increased presence of tetragonal Sn ($β$-Sn) grains. This suggests that heating from the alumina source may contribute to a partial phase transition in the Sn layer. The existence of the $β$-Sn phase induced superconducting behavior of the films by percolation effect. This study highlights the potential for modifying the structural properties of cryogenic Sn thin films through in-situ cap**, paving the way for precise control in the production of superconducting Sn films for integration into quantum computing platforms.
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Submitted 18 September, 2023; v1 submitted 29 January, 2023;
originally announced January 2023.
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First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface
Authors:
Malcolm J. A. Jardine,
Derek Dardzinski,
Maituo Yu,
Amrita Purkayastha,
A. -H. Chen,
Yu-Hao Chang,
Aaron Engel,
Vladimir N. Strocov,
Moïra Hocevar,
Chris J. Palmstrøm,
Sergey M. Frolov,
Noa Marom
Abstract:
Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $β$-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, a…
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Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $β$-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between $α$-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 6, 180 (2020)]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for $α$-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies, 5, 2100033 (2022)] is used to resolve the contributions of different $k_z$ values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/$α$-Sn, InSb/CdTe, and CdTe/$α$-Sn, as well as in tri-layer interfaces of InSb/CdTe/$α$-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the $α$-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.
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Submitted 7 January, 2023;
originally announced January 2023.
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Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect
Authors:
P. Zhang,
S. Mudi,
M. Pendharkar,
J. S. Lee,
C. P. Dempsey,
A. P. McFadden,
S. D. Harrington,
J. T. Dong,
H. Wu,
A. -H. Chen,
M. Hocevar,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Her…
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Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Here we report patterns of Shapiro steps expected in topological Josephson junctions, such as the missing first Shapiro step, or several missing odd-order steps. But our junctions, which are InAs quantum wells with Al contacts, are studied near zero magnetic field, meaning that they are not in the topological regime. We also observe other patterns such as missing even steps and several missing steps in a row, not relevant to topological superconductivity. Potentially responsible for our observations is rounding of not fully developed steps superimposed on non-monotonic resistance versus voltage curves, but several origins may be at play. Our results demonstrate that any single pattern, even striking, cannot uniquely identify topological superconductivity, and a multifactor approach is necessary to unambiguously establish this important phenomenon.
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Submitted 16 November, 2022;
originally announced November 2022.
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Large Second-Order Josephson Effect in Planar Superconductor-Semiconductor Junctions
Authors:
P. Zhang,
A. Zarassi,
L. Jarjat,
V. Van de Sande,
M. Pendharkar,
J. S. Lee,
C. P. Dempsey,
A. P. McFadden,
S. D. Harrington,
J. T. Dong,
H. Wu,
A. -H. Chen,
M. Hocevar,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gat…
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We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gate voltages as well as magnetic flux. Second, Josephson junction devices exhibit kinks near half-flux quantum in supercurrent diffraction patterns. Third, half-integer Shapiro steps are present in the junctions. Similar phenomena are observed in Sn/InAs quantum well devices. We perform data fitting to a numerical model with a two-component current phase relation. Analysis including a loop inductance suggests that the sign of the second harmonic term is negative. The microscopic origins of the observed effect remain to be understood. We consider alternative explanations which can account for some but not all of the evidence.
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Submitted 19 November, 2023; v1 submitted 14 November, 2022;
originally announced November 2022.
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Planar Josephson Junctions Templated by Nanowire Shadowing
Authors:
P. Zhang,
A. Zarassi,
M. Pendharkar,
J. S. Lee,
L. Jarjat,
V. Van de Sande,
B. Zhang,
S. Mudi,
H. Wu,
S. Tan,
C. P. Dempsey,
A. P. McFadden,
S. D. Harrington,
B. Shojaei,
J. T. Dong,
A. -H. Chen,
M. Hocevar,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technol…
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More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technologies. When both junction contacts are placed on the same surface, such as a two-dimensional material, the junction is called ``planar". One outstanding challenge is that not all materials are amenable to the standard planar junction fabrication. The device quality, rather than the intrinsic characteristics, may be defining the results. Here, we introduce a technique in which nanowires are placed on the surface and act as a shadow mask for the superconductor. The advantages are that the smallest dimension is determined by the nanowire diameter and does not require lithography, and that the junction is not exposed to chemicals such as etchants. We demonstrate this method with an InAs quantum well, using two superconductors - Al and Sn, and two semiconductor nanowires - InAs and InSb. The junctions exhibit critical current levels consistent with transparent interfaces and uniform width. We show that the template nanowire can be operated as a self-aligned electrostatic gate. Beyond single junctions, we create SQUIDs with two gate-tunable junctions. We suggest that our method can be used for a large variety of quantum materials including van der Waals layers, topological insulators, Weyl semimetals and future materials for which proximity effect devices is a promising research avenue.
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Submitted 8 November, 2022;
originally announced November 2022.
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Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells
Authors:
M. Pendharkar,
B. Zhang,
H. Wu,
A. Zarassi,
P. Zhang,
C. P. Dempsey,
J. S. Lee,
S. D. Harrington,
G. Badawy,
S. Gazibegovic,
J. Jung,
A. -H. Chen,
M. A. Verheijen,
M. Hocevar,
E. P. A. M. Bakkers,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducti…
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We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. Superconductivity persists up to 4 T in magnetic field. A tin island exhibits the coveted two-electron charging effect, a hallmark of charge parity stability. The findings open avenues for superconducting and topological quantum circuits based on new superconductor-semiconductor combinations.
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Submitted 11 December, 2019;
originally announced December 2019.
